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NEWS2007 Vol.1

MPPC (Multi-Pixel Photon Counter)

4

10 Gbps ROSA8

PSD Modules16

100 kV Microfocus X-Ray Source

32

Gated Image Intensifier Unit

38

THEMOS Mini41

16 models with different spectral response,

resolution, sensitivity, etc.

Select a model that fits your application

3

4

28

28

36

41

46

48

New Version of the

Photonic Multichannel

Analyzer (PMA)

Newly Developed

CW Laser Diodes

An Intelligent Hamamatsu Support Software forFailure Analysis

X-Ray Diffractometer for

Material Science and

Imaging using Hamamatsu

C4880-50-26WD CameraUltra-Compact and Low Cost Type

Mini-Spectrometer

New Position Sensitive

Photomultiplier Tubes

Si PIN Photodiode for

Optical Interconnection

Signal Processing

Units for PSD Modules

Back-Thinned TDI-CCD

Contents

Company News

Solid State Products

Laser Group

Electron Tube Products

X-Ray

Cameras

Phemos

PMA

Co

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en

ts

Co

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an

y

Ne

ws

3

Industrie Lyon (Lyon / France)06.03. - 09.03. 2007

Salon Laborama (Brussels / Belgium)13.03. - 14.03. 2007

Exhibitions

1 Company News Item

Solid State Division opens new MOEMS Product Development and Manufacturing Facilities

We are pleased to announce the opening oftwo new buildings in Solid State Division.The official opening ceremony of BuildingsNo.11 and 12, was held in September 2006and production has now started.

The buildings have around 11,000 m2 of floorspace and will provide facilities for the devel-opment, processing and assembly of MOEMS(micro-opto-electro-mechanical-systems)related technology.

Author: Jenny Brown Hamamatsu Photonics U.K.

The new facilities are part of HamamatsuPhotonics’ on-going strategy of expansion tosustain future business growth and to providethe highest level of quality and customersupport.

4

Lab Africa (Johannesburg / South Africa)14.03. - 16.03. 2007

Cell Biology Meeting 2007 (DGZ) (Frankfurt / Germany)14.03. - 17.03. 2007

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2 Special Topic: Mini-Spectrometer Line-Up

16 Models with different Spectral Response, Resolution, Sensitivity, etc.Select a Model that fits your Application

Hamamatsu offers a full line of mini-spectro-meters that cover a broad spectral range fordetecting UV (from 200 nm) through nearinfrared (up to 2.2 µm) light. Our product line-up includes various mini-spectrometers withunique features. These include the newlyreleased, compact and low-cost OEM models(RC series) and high-sensitivity models (usingback-thinned CCD image sensors) which areideal for low-light-level spectrophotometry, anda cooled low-noise model. Users can choosethe optimal mini-spectrometer that best meetstheir specific application.

Author: Hamamatsu Photonics K.K.

Mini-spectrometertype No.

Spectral resolution (nm)

5 100

1 nm Typ.

3 nm

C9404CAHC10082CAHC10083CAH

C9407MA C9409MA

C9404CA C9404MC

C9405CA C9405MC

C10082CA C10083CA C10082MDC10083MD

6 nm to 8 nm

5 nm

C9406GCC9913GCC9914GB

7 nm to 8 nm

9 nmN E W

N E W

Selection by spectral resolution

Type No. Product typeBuilt-in

Image sensor

Spectral response range (nm)

1200 1400 1600 1800 2000 22001000800600400200

C10083CA

C10083MD

C9405CA

C9405MC

C9406GC

TM-VIS/NIR-CCD

Back-thinnedCCD image sensor

NMOS linearimage sensor

TM-VIS/NIR-MOS

TG-SWNIR-CCD

TG-SWNIR-MOS

TG-NIR

C10082MD

C10083CAH

TM-UV/VIS-CCD

TM-UV/VIS-MOSCMOS linearimage sensor

C9913GC

C9914GB

InGaAs linearimage sensorTG-cooled NIR- I

TG-cooled NIR-II

C9404CAH

C9404MC

TG-UV-CCD

TG-UV-MOS

200 to 400

500 to 1100

200 to 800

320 to 1000

900 to 1700

1100 to 2200

Spectralresolution

Max.(nm)

C10082CAH

C10082CA

RC-VIS-MOS

RC-VIS-MOS

Features

3

3

1 *

9

8

340 to 780

High sensitivity

Wide dynamic range

High sensitivity

Wide dynamic range

CMOS linearimage sensor



7

8

Low noise(Cooled type)

High resolution

Wide dynamic range

High sensitivity

Wide dynamic range



C9404CA High sensitivity


Compact, low cost(OEM model)

Compact, low costwith driver circuit

(OEM model)

Non-cooled type

RC

ser

ies

TM s

erie

sTG

ser

ies

TG s

erie

s

TM-UV/VIS-CCD

TM-VIS/NIR-CCD

High resolution

High resolution

1 *

6

1 *( =320 to 900 nm)

8( =320 to 900 nm)

5( =550 to 900 nm)

5( =550 to 1100 nm)

* Typical

C9409MAN E W

C9407MAN E W

Selection guide

WAVELENGTH (nm)

SP

EC

TR

AL

RE

SO

LUT

ION

(nm

)

200 300 400 500 600 700 800 900 1000

8

7

6

5

4

3

2

1

0

C9404CA (Slit width 140 m, Optical NA 0.11)C10083CA (Slit width 70 m, Optical NA 0.22)C10082CA (Slit width 70 m, Optical NA 0.22)C9404CAH (Slit width 10 m, Optical NA 0.11)C10083CAH (Slit width 10 m, Optical NA 0.11)C10082CAH (Slit width 10 m, Optical NA 0.11)

Spectral resolution vs. wavelength

5

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Current Perspectives of ExtracorporealCirculation (Basel / Switzerland)16.03. - 17.03. 2007

Pathology Congress 2007 (Berlin / Germany)16.03. - 18.03. 2007

Measurable optical power (typical example)Sensitivity comparison (typical example)

Features

CCD type (with back-thinned CCD image sensor) CMOS type (with CMOS linear image sensor)

High sensitivityIdeal for low-light-level spectrophotometer

(fluorescence measurement, etc.)

Suitable for environments with relatively high light intensity(Spectrum measurement of light sources and absorbancemeasurement, etc.)

Type C9404CA, C9405CAC10082CA, C10083CA

C9404MC, C10082MD, C10083MD

Spectral resolution: 1 nm

C9404CAHC10082CAHC10083CAH

KACCB0133EB

KACCB0146EA

10-15 10-13 10-11 10-9 10-7

LIGHT POWER * (W)

C10082CA (CCD TYPE)

* Light power incident on mini-spectrometer through slit( =500 nm, integration time: 10 to 10000 ms)

C10082MD (CMOS TYPE)

WAVELENGTH (nm)

RE

LAT

IVE

SE

NS

ITIV

ITY

*

200 300 400 500 600 700 800 90010-5

10-4

10-3

10-2

10-1

100

1000

(Typ. Ta=25 ˚C)

* A/D count when constant light level enters mini-spectrometer through slit.

C10083CA(Slit width 70 m, Optical NA 0.22)C10083CAH(Slit width 10 m, Optical NA 0.11)C10082CA(Slit width 70 m, Optical NA 0.22)C10082CAH(Slit width 10 m, Optical NA 0.11)C10083MDC10082MD

Comparison of CCD and CMOS mini-spectrometersDrawing on our strength as a sensor manufac-turer, Hamamatsu offers CCD image sensorsspecifically designed for mini-spectrometers.

Our unique process technology yields ahigh CCD node sensitivity (6.5 µV/e-)High full well capacity and anti-bloomingfunction ensure a wide dynamic rangeHigh sensitivity over a wide spectral rangeand nearly flat spectral response character-isticsPixel size and number of pixels optimizedby taking resolution and stray light charac-teristics into account

Features:

Pixel sizeNumber of active pixelsActive areaSpectral response rangeHorizontal clock phaseVertical clock phaseCCD node sensitivityDark current (MPP mode)Readout noise

Full well capacity

200 to 11004 phase2 phase

6.550680

20033300

With anti-blooming

µmPixelsmmnm--

µV/e-

e-/pixel/se- rms

ke-

ke-

--

Parameter UnitS10420-1006 S10420-1106

14 x 14

1024 x 6414.336 (H) x 0.896 (V)

2048 x 6428.672 (H) x 0.896 (V)

VerticalHorizontal

Mini-spectrometers withCCD mounted

-

Dynamic rangeAnti-blooming

C9404CAC9404CAHC9405CA

C10082CAC10082CAHC10083CA

C10083CAH

Higher-orderlight cut filter

- -Window

Specifications

WAVELENGTH (nm)

QU

AN

TU

M E

FF

ICIE

NC

Y (

%)

0

100

80

60

40

20

1200200 400 600 800 1000

(Ta = 25 C)

Spectral response

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DPG (Dusseldorf / Germany)20.03. - 21.03. 2007

Congress of the German Physiological Society (Hannover / Germany)25.03. - 28.03. 2007

3 Mini-Spectrometer RC Series C9409MA, C9407MA

Ultra-Compact and Low Cost Type Mini-Spectrometer

The RC mini-spectrometers integrate a reflec-tive grating and a CMOS linear image sensorinto a compact case. Two models are provided: the C9407MA spec-trometer module with a built-in driver circuitand USB output port and the C9409MA OEMmodel spectrometer head.


The C9407MA mini-spectrometer has an inter-nal driver circuit and is powered from USB buspower. Spectrum data can be easily collectedby guiding the light into the mini-spectrometervia an optical fiber and processing the acquired

data on a PC that is USB connected to themini-spectrometer. The C9407MA is suppliedwith sample software that allows settingmeasurement conditions, acquiring and sav-ing data, and displaying graphs.

ParameterSpectral response rangeSpectral resolution (spectral response half width)A/D conversionIntegration timeInterfaceCurrent consumption (USB bus power)Operating temperatureStorage temperature

5 to 10000

C9407MA

16

340 to 7809

100USB1.1

-20 to +70

+5 to +40

Unit

C CmA

-

nmnm

msbits

[Patent: 1 application]

Specifications

46

C9409MA C9409MA(4 ×) M2.6 DEPTH 3

50.011.5

73.0

340

30.0

11.5

53.0

Dimensional outline USBCABLE

PC

MINI-SPECTROMETER

QUARTZ CELL(For holding liquid sample)

FIBER

VIS FIBER LIGHT SOURCE(Halogen lamp)

Connection diagram

WAVELENGTH (nm)

A/D

CO

UN

T

3400

35000

30000

25000

20000

15000

10000

5000

390 440 490 540 590 790640 690 740

WHITE LED

3-COLOR LED

Measurement example (white LED and 3-color LED spectrum measurement)

7

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Spring 2007 Meeting BSDB/BSCB (Edinburgh / UK)29.03. - 31.03. 2007

Neurobioloy Conference 2007 (Goettingen / Germany)29.03. - 01.04. 2007

The C9409MA comes in a compact and low-cost unit, which is achieved by integratingoptical components such as collimating func-tion and focusing function into a glass body. The C9409MA also incorporates a CMOSlinear image sensor designed by Hamamatsu

for mini-spectrometers. The input/output ter-minals of the built-in image sensor are wiredto a flexible printed circuit board for easyelectrical connection to equipment whereC9409MA will be installed.

pixelsnmnmnm

nm/ CdBdB m-

-

m C C

Parameter UnitNumber of pixelsSpectral response rangeSpectral resolution (spectral response half width)Wavelength reproducibilityTemperature dependence of wavelengthSpectral stray light *1

Broadband stray light *2

SlitOptical NA

Image sensor

*1: When light of 550 nm wavelength is input, spectral stray light is defined as the ratio of the count measured at the inputwavelength to the count measured in a region of the input wavelength 40 nm.

*2: This is the ratio of the transmittance measured with light passing through an optical filter OG530 to the transmittancemeasured in the blocking region.

Optical fiber (core diameter)Operating temperatureStorage temperature

0.50.05-30-25

C9409MA256

340 to 7809

70 (H) 550 (V)0.22

CMOS linear image sensorS8378-256N

600+5 to +40-20 to +70

Specifications

28 28

28350

FLEXIBLE BOARD

Dimensional outline

GRATINGIMAGE SENSOR

FOCUSING FUNCTIONCOLLIMATING FUNCTION

GLASS BODY

FIBER

Optical layout in mini-spectrometer RC series

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Eurotoxpath 2007 (Nantes / France)23.04. - 27.04. 2007

Expo Electronica '07 (Moscow / Russia)25.04. - 28.04. 2007

4 S10362-11 Series


The MPPC is a new type of photon countingdevice made up of multiple APD (avalanchephotodiode) pixels operated in geiger mode.The MPPC is essentially an opto-semicon-ductor device with excellent photon countingcapability and features low voltage operationand insensitivity to magnetic fields. Pulse waveform when using a linear

amplifier (120 times)(S10362-11-050U, M = 7,5 x 105)Author: Hamamatsu Photonics K.K.

The light we usually see consists of a streamof light particles (photons) that produce a cer-tain brightness. When this brightness falls toa very low level, the incoming photons are nowseparated from each other. Photon countingis a technique to measure low light levels bycounting the number of photons.Photomultiplier tubes and APDs (avalanchephotodiodes) are the most popular photoncounting devices.APDs are high-speed, high-sensitivity photo-diodes that internally amplify photocurrentwhen a reverse bias is applied. When thereverse bias applied to an APD is set higherthan the breakdown voltage, the internal elec-tric field becomes so high that a huge gain(105 to 106) can be obtained. Operating an APDunder this condition is called “geiger mode”operation. During geiger mode, a very largepulse is generated when a carrier is injectedinto the avalanche layer by means of incidentphoton. Detecting this pulse makes it possibleto detect single photons.The MPPC is made up of multiple APD pixelsoperated in geiger mode. The sum of theoutput from each pixel forms the MPPC out-put, which allows the photons to be counted.

8

TIME

7NU

MB

ER

OF

PH

OT

ON

S

6

5

4

3

2

1

The MPPC delivers superb photon countingperformance. Connecting the MPPC to a linear amp will show sharp waveforms on anoscilloscope according to the number of detected photons.

The fact that the individual peaks are clearlyseparate from each other, proves there is littlevariation between the gains of APD pixelsmaking up the MPPC.

PULSELIGHT SOURCE

TRIGGER(LIGHT OUTPUT TIMING)

OPTICALATTENUATOR

OPTICAL FIBER

AMPLIFIEDMPPC SIGNAL

OSCILLOSCOPE

PULSED LIGHT

AMP

MPPCPOWER SUPPLY

AMPPOWER SUPPLY

MPPC

Connection example (MPPC output signal is displayed on an oscilloscope)

0

100

NUMBER OF PHOTONS

200

0 5 10 15 20

300

FR

EQ

UE

NC

Y (

NU

MB

ER

OF

EV

EN

TS

)

400

500

600

Pulse height spectrum when usingcharge amplifier

(S10362-11-025U, M = 2.75 x 105)

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2007 Technology & Innovation Forum (Chilton / UK)03.05. 2007

Anaesthology Congress (Hamburg / Germany)05.05. - 08.05. 2007

Photon detection efficiency is a measure thatindicates what percentage of the incidentphotons are detected. Not all carriers generatedby the incident photons will create pulses largeenough to be detected, so photon detectionefficiency can be calculated using the follow-ing equation. Photon detection efficiencyincreases as the bias voltage is increased.

PDE = Quantum efficiency x Fill factor xAvalanche probability

The fill factor has a trade-off relation with thetotal number of pixels. Their values determinepossible applications suitable for the MPPC(refer to page 10).

Geiger mode is a method for operating anAPD at a reverse bias higher than the break-down voltage. A high electric field is producedin the APD during geiger mode so that a dis-charge occurs even from a weak light input.This phenomenon is known as “geiger dis-charge”. The electron gain at this point is ashigh as 105 or 106 and the magnitude of theoutput current is constant regardless of thenumber of input photons.When a quenching resistor is connected tothe geiger mode APD (see “geiger mode APDand quenching resistor”), the APD operatesas shown in “geiger mode APD operation”.

Fill factor =Effective pixel size

Total pixel size

Avalanche probability =Number of excited pixels

Number of photon-incident pixels

MPPC is made up of multiple APD pixelsconnected in parallel and operated in geigermode. Since all APD pixels are connected toone readout channel, the output pulses fromthe APD pixels overlap each other, creating alarge pulse. By measuring the height or elec-trical charge of this pulse, the number of pho-tons detected by the MPPC can be estimated.Qout = C x (VR - VBR) x Nfired

C: Capacitance of one APD pixelNfired: Number of APD pixels that detected photons

Operation mode Reverse bias Gain

Normal mode Below breakdownvoltage

Dozens toseveral hundred

Geiger mode Above breakdownvoltage 105 to 106

Operation modes of APD

PH

OT

ON

DE

TE

CT

ION

EF

FIC

IEN

CY

(%

)

WAVELENGTH (nm)

0

10

20

30

40

50

60

70

200 300 400 500 600 700 800 900 1000

(Ta = 25 °C)

S10362-11-025U

S10362-11-050U

S10362-11-100U

Spectral response

VR : Reverse biasVBR: Breakdown voltage

PHOTON

VR (>VBR)

QUENCHING RESISTOR

GEIGER MODE APD PIXEL

Geiger mode APD and quenching resistor

Discharge (output from pixel)When photons strike an APD pixel during Geiger mode, a constant signal Q = C x (VR - VBR) is produced from the pixel, independent of the number of photons.

QuenchingWhen a current flows through the quenching resistor, the reverse voltage drops to VBR.

RechargeThe reserve bias returns to VR by recharge, so Gei-ger mode operation can begin again.

VOLTAGE

CU

RR

EN

T

VR

DISCHARGE(OUTPUT FROM PIXEL)

RECHARGE

GEIGER MODENORMAL MODE

VBR

QUENCHING

Geiger mode APD operation

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MIPTEC (Basel / Switzerland)07.05. - 10.05. 2007

XXIII Congreso Sociedad Espanola de Anatomia Patologica (Tarragona / Spain)16.05. - 19.05. 2007


Gain of MPPC has excellent linearity vs.reverse bias.

Excellent photon counting capability(excellent detection efficiency versus numberof incident photons)Room temperature operationLow bias (below 100 V) operationHigh gain: 105 to 106

Insensitive to magnetic fieldsExcellent time resolutionSmall sizeSimple readout circuit operationMPPC module available (optional)

Features:

50 m PITCH400 PIXELS



PETHEP calorimeter

Fluorescence measurementNeutrino detection

WIDE NARROWDYNAMIC RANGE

HIGH(to 90 %)

LOW(10 to 40 %)

FILL FACTOR

Application example

Gain vs. reverse bias

S10362-11-025U/C

REVERSE BIAS (V)

GA

IN

1 105

0

2 105

3 105

4 105

5 105 (Ta = 25 C)

76.6 76.8 77.0 77.2 77.4 77.6 77.8 78.0

S10362-11-050U/C, S10362-11-100U/C

REVERSE BIAS (V)

(Ta = 25 C)

GA

IN

0

1 105

2 105

3 105

4 105

5 105

6 105

7 105

8 105

9 105

1 106

2 106

3 106

4 106

Blue S10362-11-050U/CGreen S10362-11-100U/C

69.4 69.6 69.8 70.0 70.2 70.4 70.6 71.070.8

Parameter Symbol

Chip sizeEffective active areaNumber of pixelsPixel sizeFill factor *1

Spectral response rangePeak sensitivity wavelengthQuantum efficiency (λ = λp)Photon detection efficiency *2 (λ = λp)Operating voltageDark countTerminal capacitanceTime resolution (FWHM)Temperature coefficient of reverse biasGain

*1: Ratio of the active area of a pixel to the entire area of the pixel.*2: Photon detection efficiency includes cross-talk and afterpulses.Note: The last letter of each type number indicates package materials (U: metal, C: ceramic).

S10362-11 series-025U, -025C -050U, -050C -100U, -100C

1.5 x 1.51 x 1

1600 400 10025 x 25 50 x 50 100 x 100

30.8 61.5 78.5

40070 Min.

25 50 6577 ± 10 70 ± 10 70 ± 10

100 270 40035

250 220 25050

2.75 x 105 7.5 x 105 2.4 x 106

-----λ

λpQE

PDE--

Ct--M

270 to 900

Unit

mmmm

-µm%nmnm%%V

kcpspFps

mV/ C-


Specifications

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DIPAC 07 Diagnostics and Instrumentation for Particle Accelerator Workshop (Trieste / Italy)20.05. - 23.05. 2007

Sensor + Test 2007 (Nuernberg / Germany)22.05. - 24.05. 2007

MPPC Module

5 C10507-11 Series (Under Development)

The MPPC module is a photon counting mod-ule capable of low-light-level detection. Thismodule consists of an MPPC device, current-to-voltage converter circuit, high-speed com-parator circuit, high-voltage power supply cir-cuit, temperature-compensation circuit, count-er circuit, and microcomputer. The modulealso has a USB port for connecting to a PC.The threshold level (detection level for onephoton) can be changed from a PC. TheMPPC module is designed to extract maxi-mum MPPC performance and so yields

excellent photon counting characteristics.Potential applications include nuclear medi-cine, medical diagnosis, drug discovery, highenergy physics experiments, fluorescencemeasurement, environmental chemical analysisas well as many other areas in a wide rangeof fields.

We are also developing MPPC modules thatuse an optical fiber attached to the detectorsection or a scintillator coupled to the detector.

ParameterInternal MPPCActive areaNumber of pixelsPeak sensitivity wavelengthOutput voltageDark countPhoton detection efficiencyTemperature coefficient of gainComparator threshold levelInterfaceBoard dimension

ConditionSymbol C10507-11-025U C10507-11-050US10362-11-025U S10362-11-050U

1 x 11600 400

400100

100 27025 50

±2.5Adjustable

USB

0.5 p.e.

25 ±10 C

---λp--

PDE---- 80 x 55

Unit-

mm-

nmmV/p.e.kcps

%%--

mm

Specifications

Measurement example of dark count rate areindicated below.


MPPC

TEMPERATURESENSOR

VOLTAGECONTROLLER

CURRENT-TO-VOLTAGECONVERSION AMP

HIGH-VOLTAGEGENERATOR

MICROCOMPUTER

COMPARATOR

ANALOG OUTPUT DIGITAL OUTPUT

COUNTER

USBINTERFACE

MPPC MODULE

Block diagram

Dark count vs. reverse bias

S10362-11-025U/C

REVERSE BIAS (V)

DA

RK

CO

UN

T (

kcps

)

0.1

1

10

100

1000

76.0 76.2 76.4 76.6 76.8 77.0 77.2 77.4 77.6

(Ta = 25 C)

0.5 p.e. thr.1.5 p.e. thr.

S10362-11-050U/C, S10362-11-100U/C

REVERSE BIAS (V)

DA

RK

CO

UN

T (

kcps

)

69.4 69.6 69.8 70.0 70.2 70.4 70.6 71.070.8

(Ta = 25 C)

0.1

1

10

100

1000

10000

Blue S10362-11-050U/CGreen S10362-11-100U/C

0.5 p.e. thr.1.5 p.e. thr.

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Colloque des Neurosciences (Montpellier / France)22.05. - 25.05. 2007

6 S10200-02, S10201-04, S10202-08, S10202-16


TDI-CCD captures clear, bright images evenunder low-light-level conditions during high-speed imaging. During TDI mode, the CCDcaptures an image of a moving object whiletransferring integrated signal charges synchro-nously with the object movement. This opera-tion mode dramatically boosts sensitivity tohigh levels even when capturing fast movingobjects. Our new TDI-CCD uses a back-thinned structure to achieve even higher quan-tum efficiency over a wide spectral range fromthe UV to the near IR region (200 nm to 1100nm).

TDI mode gives high sensitivityHigh-speed, continuous image acquisitionBack-thinned structure ensures high sensi-tivity from UV to near IRMultiple ports for high-speed line rate

Features:

Sequential imaging of high-speed movingsamplesInspection tasks on electronic parts production lineSemiconductor inspectionFlow cytometry

Applications:

2007 Technology & Innovation Forum(Aldermaston / UK)24.05. 2007

Author: Hamamatsu Photonics K.K.Bidirectional30 MHz/port

50 kHz

100 kHz

12 µm x 12 µm

Type No. Pixel rate

S10200-02S10201-04S10202-08

S10202-16

Pixel size Number ofactive pixels

Number ofports Line rate Vertical transfer

1024 x 1282048 x 1284096 x 1284096 x 128

248

16

Selection guide

Pixel sizeNumber of TDI stagesFull well capacity (vertical register)Anti-bloomingVertical clockHorizontal clock Output circuitCCD node sensitivityReadout noiseDynamic rangePackageWindow materialSpectral response range

Parameter Specification12 µm x 12 µm

128120 ke-

Full well capacity x 100 (Min.)3 phases2 phases

2-stage MOSFET source follower3.5 V/e-

100 e- rms1200

Ceramic DIPQuartz

200 nm to 1100 nm

[Patent: 11 applications]

Specifications

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30ème ASSISES D´ANATOMIE PATHOLOGIQUE(Bordeaux / France)24.05. - 25.05. 2007

Pathology Congress 2007 (DGP 2007) (Magdeburg / Germany)30.05. - 02.06. 2007

These speeds are expressed by the followingequation:

v = f x dv: Object speeds, signal transfer speedf: Vertical transfer frequencyd: Pixel size

In the diagram below, when the first stage char-ge is transferred to the second stage, an addi-tional charge is produced in the second stageby photoelectric conversion and accumulated.When this operation is continuously repeateduntil reaching the last stage M, a signal chargewhich is M times greater than the initial chargeis accumulated. This shows that TDI mode canenhance sensitivity up to M times higher thanordinary linear sensors. Since the signal chargeon each line is output from the CCD horizontalshift register, a two-dimensional image can becontinuously acquired. TDI mode also dramat-ically improves sensitivity variations comparedto frame mode operation because signals fromall pixels are accumulated in each line.

The back-thinned (back-illuminated) structureensures higher sensitivity in the UV through tothe near IR region, than front-illuminated types (200 nm to 1100 nm).

Feature 2TDI mode provides integrated exposure whilesynchronizing object movement with the signalcharge transfer timing. The signal charge isintegrated a number of times equal to the num-ber of vertical stages (128 stages on our TDI-CCD), so TDI mode yields enhanced sensitivityabout 128 times higher than ordinary linearimage sensors.

TDI (time delay integration) modeIn FFT-CCD, signal charges in each line are ver-tically transferred during charge readout. TDImode synchronizes this vertical transfer timingwith the movement of the object irradiating onthe CCD, so that signal charges are integrateda number of times equal to the number of ver-tical stages of the CCD pixels. In TDI mode, the signal charges must be trans-ferred in the same direction at the same speedas those of the object to be imaged.

Feature 1

SIG

NAL

TR

ANSF

ER

OBJ

ECT

MO

VEM

ENT

CH

AR

GE

Time1 Time2 Time3FIRST STAGE

LAST STAGE M

Schematic diagram showing integrated exposure by TDI mode

WAVELENGTH (nm)

0

500

1000

1500

2000

2500

200 400 600 900800 1000300 500 700 1100

3000 (Typ. Ta = 25 C)

PH

OT

O S

EN

SIT

IVIT

Y (

V/µ

J x

c

m2 )

Spectral response

WAVELENGTH (nm)

QU

AN

TU

M E

FF

ICIE

NC

Y (

%)

0

10

20

30

40

50

60

70

80

90

200 300 400 500 600 700 800 900 1000 1100 1200

100 (Typ. Ta = 25 C)

BACK-THINNED TDI-CCDS10200-02S10201-04S10202-08S10202-16

FRONT-ILLUMINATED CCD

Quantum efficiency vs. wavelength

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4th European FDSS users meeting (HPF / France)07.06. 2007

UKRC 2007 (Manchester / UK)11.06. - 13.06. 2007


TDI-CCD is ideal for capturing images of fastmoving or rotating objects and is thus widelyused in line scan cameras for industrial robots,etc. The examples on the right, show capturingimage examples of a fast moving object andfast rotating object (an image of charactersprinted on a drum that were captured by a CCDoperating in frame mode and TDI mode).

Feature 3

TDI-CCD(2048 x 128 PIXELS)

DIRECTION OF SIGNALTRANSFER

Capturing image exampleof a fast moving object

DRUM

DIRECTIONOF ROTATION



DRUM

DIRECTIONOF ROTATION



Capturing image example of a fast rotating object

Frame mode imagingWhen the drum is in idle, a clear image withno blurring is obtained as shown in 1).However, when the drum is rotating, the framemode image is blurred as shown in 2).Although shortening the shutter time allowscapturing an unblurred image, the imagebecomes dark as shown in 3).

1) When drum is in idle:

2) When drum is rotating:

3) When drum is rotating (with short shuttertime):

TDI mode imagingIn TDI mode, signals are transferred in thesame direction and at the same speed as therotating drum, so a continuous image with noblurring is obtained as shown in 4).

4) Continuous image when drum is rotating:

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Medical Innovation Forum (London / UK)13.06. 2007

EACTA 2007 (Krakow / Poland)13.06. - 16.06. 2007

7 C10000-201

Board-Level TDI Camera

128

PIX

ELS

512 PIXELS

PORT

BIDIRECTIONALTRANSFER

PORT PORT PORT

PORT PORT PORT PORT

This structure allows bidirectional vertical charge transfer.

512 PIXELS 512 PIXELS 512 PIXELS

TDI-CCD sensor structure [Example: S10201-04, 2048 (H) x 128 (V) pixels, 4 ports on each side x 2

(bidirectional transfer)]

Using multiple amplifiers (multiple output ports)allows parallel image readout at a fast line rate.

Feature 4

Parameter SpecificationCamera type

Number of effective pixels

Image device structure

Pixel size

Effective active area

TDI readout direction

Output channels

Anti-blooming function

Pixel clock

TDI line rate

Full well capacity (Typ.)

Readout noise (Typ.)

Dynamic range (Typ.)

A/D converter

Lens mount

Interface

TDI line rate control

Analog gain control

Supply voltage / Power consumption

Camera control

Camera connector

Board type

2048 (H) x 128 (V) 1024 (H) x 128 (V)

Back-thinned type

12 µm (H) x 12 µm (V)

24.58 mm (H) x 1.536 mm (V) 12.29 mm (H) x 1.536 mm (V)

Bidirectional readout

2 ports (512 x 2)4 ports (512 x 4)

Lateral overflow drain (up to 100 times the full well capacity)

30 MHz

0.45 kHz to 50 kHz

100 ke-

130 e-rms

770

12 bits / 8 bits *1

C mountF mount

Camera Link (Medium Configuration)

Internal setting *2

External trigger

0 dB to 20 dB

DC +15 V, DC +5 V / 20 V･ACamera Link (using serial command line)

Camera Link x 2 / 9-pin D-sub (power) / BNC (trigger)

*1: Output bit is selectable by serial command.*2: Internal TDI line rate can be set in 33 ns steps.

Specifications

The board-level TDI camera C10000-201 isuseful in a wide range of imaging applica-tions requiring both high speed and highsensitivity, including in-line monitoring and inspection.Article 36 for other TDI camera models.


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Laser 2007 (Munich / Germany)18.06. - 21.06. 2007

Association Française d´histopathologie(Tours / France)21.06. - 22.06. 2007

8 G10447-51/-54, G10208-51/-54, G10342-54

10 Gbps ROSA

Hamamatsu develops and produces advancedoptical receivers such as ROSA (receiveroptical sub-assembly) used for interconnec-tions between network devices. To support even higher speeds between net-work devices, we offer a product line-up devel-

oped specifically for optical transceivers inthe 850 nm, 1.3 µm and 1.55 µm bands thatconform to 10-Gigabit Ethernet and SONETstandards.

Hamamatsu has established technologies foraccurately testing and measuring device per-formance and characteristics required in lightreceiver devices for optical fiber communica-tions. In this way, high level product qualitycan be maintained, and we can set our sightson developing devices with even higher per-formance and more sophisticated functions.

Examples of device testing and measurement equipment


Communication standard

XFP

10 Gbps Ethernet (IEEE802.3ae)

LRM SR LR ER

XPAK

X2

XENPAK

G10208-54

Transmission distance 220 m 300 m 10 km 40 km

G10447-54 G10518-54 G10342-54

G10208-51G10208-54

G10447-51G10447-54

G10518-51G10518-54

G10208-51 G10447-51 G10518-51

G10208-51 G10447-51 G10518-51Opt

ical

tra

nsce

iver

sta

ndar

d

Contact us formore information

Wavelength

SONET/OC-192

Contact us for more information

Communication standard

XFP

VSR SR-1 IR-2 LR-2

300pin

G10342-54

Transmission distance 600 m 10 km 40 km 80 km

G10342-54 G10342-54Under

development

Optic

al tra

nsce

iver s

tanda

rd

Wavelength 1.3 µm 1.3 µm 1.55 µm 1.55 µm

1.3 µm 1.3 µm 1.55 µm0.85 µm

Type number suffix indicates connector types. -51: SC connector with flexible board, -54: LC connector with flexible board

10 Gbps ROSA line-up (flexible board type)

High-speed oscilloscope(40 Gbps)

Optical component analyzer(for frequency measurement,50 Gbps)

Bit error rate tester

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2007 Technology & Innovation Forum (Culham / UK)28.06. 2007

COLOQ 10 (Grenoble / France)04.07. - 06.07. 2007

GaAs PIN photodiodes with preamp for SR G10447-51/-54

InGaAs PIN photodiodes with preampG10342-54

InGaAs PIN photodiodes with preamp forLRM G10208-51/-54

Eye diagram

-26 -18-19-20-21-22-23-24-2510-12

10-3

10-4

10-5

10-6

10-7

10-8

10-9

10-10

10-11

AVERAGE LIGHT LEVEL (dBm)

BIT

ER

RO

R R

AT

E

(Typ. Ta=25 , Bit rate 11.1 Gbps, PN=31)

Bit error rate

Pin = -13 dBm, 30 mV/div., 20 ps/div.

Bit rate 10 Gbps, PN = 31, NRZ, λ = 850 nm,extinction ratio 4.5 dB, Vcc = Vpd = 3.3 V,sensitivity 0.55 A/W

Eye diagram

Optical waveforms after MMF transmission of 300 meters

G10208-14-54 output waveform

Optical waveforms reproducedwith high fidelity

G10447-54

G10208-54

Low cost plastic connector typeSupports 10 Gbps Ethernet SR standard.G10447-54 (Ø 1.25 mm) is for XFP andXPAK, and G10447-51 (Ø 2.5 mm) for XEN-PAK, X2 and XPAKLarge active area: Ø 60 µmUses a GaAs PIN photodiode with a largeactive area (Ø 60 µm) compatible with multi-mode optical fibers, yet delivers a high-speedresponse of 10 Gbps at a low voltage (3.3 V)Trans-impedance: 6 kΩ Typ. (single-ended)Prevents receivable sensitivity deteriorationcaused by cross-talk from adjacent circuitsMinimum receivable sensitivity: -13.5 dBmTyp. (OMA, extinction ratio 3.0 dB)

Features:

Low cost plastic connector typeSupports 10 Gbps Ethernet LRM standard.G10208-54 (Ø 1.25 mm) is for XFP andXPAK, and G10208-51 (Ø 2.5 mm) for XEN-PAK, X2 and XPAKLarge active area: Ø 60 µmUses an InGaAs PIN photodiode with a largeactive area (Ø 60 µm) compatible with multi-mode optical fibers, yet delivers a high-speedresponse of 10 Gbps at a low voltage (3.3 V)Internal trans-impedance amplifier with AGCDelivers a linear output over a broad lightinput rangeMinimum receivable sensitivity: -15 dBmTyp. (OMA, extinction ratio 14 dB)

Features:

Compliant with XMD (10 Gbps MiniatureDevice)-MSASupports XMD-MSA standard for ROSA forXFPLow voltage operation: Vcc = Vpd = 3.3 V11.3 Gbps high-speed response even at lowvoltages (3.3 V)Optical return loss: 35 dB TypTrans-impedance: 6 kΩ Typ. (single-ended)Prevents receivable sensitivity deteriorationcaused by cross-talk from adjacent circuitsMinimum receivable sensitivity: -20.5 dBmTyp (average, extinction ratio 14 dB)

Features:

G10342-54

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32nd FEBS Congress Molecular Machines(Vienna / Austria)07.07. - 12.07. 2007

9th Int´l Conf. On Biology & Synchrotron Radiation (Manchester / UK)13.08. - 17.08. 2007

9 G10519-14

2.7 Gbps InGaAs APD ROSA


This device is an InGaAs APD with preampassembled with a receptacle designed for anLC connector, which is compatible with SFPtransceivers.

High-speed response: 2.7 GbpsAlso compatible with STM-16 FEC (2.7 Gbps)High sensitivity: 27 mV/µW(λλ = 1.55 µm, M = 10)Delivers high sensitivity in 1.55 µm bandInsulated type: housing and signal groundare electrically isolatedElectrically isolating the housing from thesignal ground prevents sensitivity fromdeteriorating due to external ESD or surgevoltages

Features:

Dark state, RL = ∞M = 10, Pin = -27 dBm, -3 dB

Pin = -27 dBm, -3 dB

RL = 50 , f = 100 MHz

ID = 100 A

Tc = 25 to 75

2.7 Gbps, NRZBER = 10-10, PRBS = 223-1Extinction ratio 8.2 dBVR: the best voltage

Dark state, RL =∞VR = 0.9 x V BR

= 1.31/1.55 m

Parameter Condition Max.Min.Symbol Unit

Responsivity

Supply current

Cut-off frequency

Low cut-off frequency

Trans-impedance *2

Breakdown voltage

Temperature coefficientof breakdown voltageMinimum receivablesensitivityMaximum receivablesensitivity

Dark current

Optical return loss

Typ.

0.8

-

1.7

-

2

40

-

-

-7

-

27

0.9

25

2.0

7

3

55

0.11

-33

-5

40

35

-

35

-

100

-

65

0.16

-31

-

80

-

R

Icc

fc

fc-L

Tz

VBR

-

Pmin

Pmax

ID

ORL

M = 1, = 1.55 µm A/W

mA

GHz

kHz

k

V

V/

dBm

nA

dB

*1: Output: capacitive coupling*2: Single-ended (Vout+) measurement

W *1, unless otherwise noted)RL = 50m, Vcc = 3.0 V to 3.6 V, (Ta = 25 °C, = 1.55

Electrical and optical characteristics

-40 -30-31-33-35-37-39 -32-34-36-3810-1210-11

10-10

10-9

10-8

10-7

10-6

10-5

10-4

10-3

AVERAGE OPTICAL INPUT POWER (dBm)

BIT

ER

RO

R R

AT

E

(Ta=25 　, 2.7 Gbps, PRBS=223-1, BER=10-10, Extinction ratio=8.2 dB, M=10)

Bit error rate

1 10010

-25

-26

-27

-28

-29

-30

-31

-32

-33

-34

-35

GAIN

YTI

VITI

SN

ES

ELB

AV I

EC

ER

MU

MINI

M

(Ta=25 , 2.7 Gbps, PRBS=223-1, BER=10-10, Extinction ratio=8.2 dB)

Minimum receivable sensitivity vs. gain

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10 Si PIN Photodiode (Under Development)

Si PIN Photodiode for Optical Interconnection

High-speed response (the gigahertz range) SiPIN photodiode employs a flip-chip structure,and utilizing MEMS technology has allowed usto develop a high-speed PIN photodiode withthe anode and cathode electrodes formed onthe same surface. This unique structure allowsflip-chip mounting.Hamamatsu is also developing back-emittingVCSEL arrays and back-illuminated GaAsphotodiode arrays and will continue furtherresearch and development to support variouscomponent mounting methods.


Anode/cathode electrodes formed on thesame surfaceThis Si PIN photodiode has a unique struc-ture where the anode and cathode electrodesare formed on the same surface. It also deliv-ers high-speed response in the gigahertzrangeFlip-chip mountableFlip-chip mounting directly bonds the deviceto the electrodes on a PC board for highlyaccurate and high-density mounting of boardcomponents. Mounting in close proximity toamps and ICs helps drastically reduce theoptical module size

Features:


A 4 element VCSEL array achieving 40 Gbpsresponse (10 Gbps each x 4 ch) is underdevelopment, which willl allow flip-chip mount-ing. The device has been developed using thelatest MEMS and photocathode technologies.The thinned wafer attached to the glass is ofa back-emitting structure.

ANODECATHODE

ANODE

ACTIVE AREA 100 m

ACTIVE AREA 100 m

WIRE

BUMPELECTRODE

CATHODE

Structural diagram

WAVEGUIDE

DRIVE IC

Si PIN PHOTODIODE

VCSEL SIGNAL PROCESSING IC

Typical application (mounted on waveguide-integrated board)

[Patent: 2 applications]

Chip photo (1 element)

Conventional structure New structure

Elkom (Helsinki / Finland)04.09. - 07.09. 2007

GO (Basel / Switzerland)04.09. - 07.09. 2007

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11 S10453 Series

CMOS Linear Image Sensors

Voltage output type with high-speed data rate(10 MHz)

Hamamatsu now introduces a voltage outputtype CMOS linear image sensor that operatesat a high-speed data rate of 10 MHz (conven-tional type 5 MHz). This CMOS linear imagesensor has a pixel size of 25 µm x 500 µm andis available in two types of 512 pixels (S10453-512Q) or 1024 pixels (S10453-1024Q).


PHOTODIODE ARRAY

AMP + HOLD CAPACITY ARRAY

SHIFT REGISTER

HIGH-SPEEDREADOUTCIRCUIT

TIMING GENERATOR BIAS GENERATOR

Vdd GND

Video

EOS

CLK ST

Block diagram

Waveform

CLK

Video

*1: Integration time Ts=10 ms*2: Difference from Vo*3: Photo response non-uniformity (PRNU) is measured under the condition that

the device is uniformly illuminated by light which is 50 % of the saturation exposure level and is defined as follows:

PRNU=DX/X x 100 [%] X: average output of all pixels, DX: difference between X and maximum output

or minimum output*4: Excluding the start pixel and last pixel

Spectral response rangePeak sensitivity wavelengthDark output voltage *1

Offset output voltageSaturation output voltage *2

NoisePhoto response non-uniformity *3 *4

nmnmmVVV

mV rms%

Parameter UnitSymbol

λpVdVo

VsatN

PRNU

Min. Typ. Max.

200 to 100060015

0.85-

1.8-

--

0.42.5--

-301.2--

±10

λ

Electrical and optical characteristics [Ta = 25 ºC, Vdd = 5 V, V (CLK) = V (SP) = 5 V]

Video dat200 kHz 1 MHz

Variable integration time functionHigh UV sensitivity (current output)

Standard type

S8377/S8378 series(128, 256, 512, 1024 pixels)

S10111 to S10114 series(128, 256, 512, 1024 pixels)

Digital output typeS10077

(1024 pixels)

Standard typeS9226

(1024 pixels)

Surface mount,miniature type

S10226(1024 pixels)

Majorapplication

Spectrometer

Patternrecognition

Measurementequipment

Barcodereader

Variable integration time functionHigh UV sensitivity (voltage output)

S10121 to S10124 series (128, 256, 512, 1024 pixels)

Under development

CMOS linear image sen

100 ns


21st European Congress of Pathology (Istanbul / Turkey)08.09. - 13.09. 2007

10th Conference, Methods & Applications of Fluorescence (MAF-10) (Salzburg / Austria)09.09. - 12.09. 2007

High-speed data rate (10 MHz)Our unique circuit design enables high-speedreadout. The output is a voltage output thatis easy to handle and process, making thislinear image sensor ideal for image readoutin measurement and industrial applications

Feature:

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Variable integration time for each pixelHigh UV sensitivity and smoothly varyingspectral response characteristicsOn-chip charge amp with excellentinput/output characteristicsBuilt-in timing generator allows operationwith only start and clock pulse inputsVoltage output type

Features:

a rate5 MHz 10 MHz

High sensitivity, high-speed typeS10453 series (512, 1024 pixels)

High-speed typeS9227

(512 pixels)

Surface mount,miniature type

S10227(512 pixels)

N E W

sor line-up

12 S10121 to S10124 Series (Under Development)

UV Enhanced Type with Variable Integration Time Function

S10121 to S10124 series are CMOS linearimage sensors with enhanced UV sensitivityand a variable integration time function.These image sensors also include a current-integration readout circuit utilizing the videoline and an impedance conversion circuit.External readout circuit is easy to configuresince the output signal is a boxcar waveformfor easy handling.


200 600 1000300 400 800700 1100500 900 1200

WAVELENGTH (nm)

PH

OT

O S

EN

SIT

IVIT

Y (

mA

/W)

(Typ. Ta = 25 ˚C)

200

300

0

400

100

Spectral response

S10121-128QS10121-256QS10121-512QS10122-128QS10122-256QS10122-512QS10123-256QS10123-512QS10123-1024QS10124-256QS10124-512QS10124-1024Q

Type No.Number of

pixelsPixel pitch

( m)

50

Pixel height(mm)

128256512128256512256512

1024256512

1024

25

2.5

0.5

0.5

2.5

Selection guide

33rd European Conference and Exhibition on Optical Communication, ECOC 2007 (Berlin / Germany)16.09. - 20.09. 2007

ILMAC (Basel / Switzerland)25.09. - 28.09. 2007


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13 S9674

Si Photodiode

S9674 is a highly reliable photodiode designedfor compatibility with lead-free solder reflowprocesses. The newly developed small, thin,leadless package reduces the required com-ponent mounting area. These features makeS9674 ideal for compact designs.

Wide operating/storage temperature range: -40 °C to +150 °CWide operating/storage temperature rangeideal for in-vehicle applicationsSurface mount, small, thin, leadless package:The newly developed package down to 5.7 mm x 4.0 mm x 1.4 mm helps drasticallyreduce the on-board mounting area

Features:


INFRARED LED Si PHOTODIODE

RAINDROP WINDSHIELD

Application example (vehical windshield rain sensor)

If there are no raindrops on the windshield,the infrared light emitted from the infraredLED reflects from the windshield surfaceand strikes the photodiode. If there areraindrops on the windshield, the infraredlight does not reflect back to the photo-diode because the infrared light transmitsthrough the raindrops. Utilizing this prin-ciple will make it possible to sense rain-drops on a windshield.

Parameter Value

10

-40 to +125

-40 to +125

Symbol Unit

Reverse voltage

Operating temperature

Storage temperature

VR Max.

Topr

Tstg

V

°C

°C

Absolute maximum ratings

= p100 lx, 2856 K

VR = 5 V

VR = 0 V, RL = 1 kΩ10 to 90 %VR = 0 V, f = 10 kHz

Parameter Condition

320 to 1100

960

0.7

4.8

+0.1

±60

0.005

1.12

2

450

Max.Min.Symbol Unit

Spectral response range

Peak sensitivity wavelength

Photo sensitivity

Short circuit current

Temperature coefficient of Isc

Half-value angle

Dark current

Temperature coefficient of ID

Rise time

Terminal capacitance

Typ.

-

-

0.6

-

-

-

-

-

-

-

-

-

-

-

-

-

1

-

-

-

pS

Isc

-

-

ID

TCID

tr

Ct

nm

nm

A/W

A

%/°C

degrees

nA

times/°C

s

pF

(Ta = 25 °C)


48th Annual Meeting of the European Society forPEADIATRIC RESEARCH (Prague / Czech Republic)06.10. - 08.10. 2007

Semicon Europa 2007 (Stuttgart / Germany)09.10. - 11.10. 2007

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14 P10210

Encoder Module

High resolution: 50 µm (during 2-phase output)This encoder module allows high-resolutionmeasurement when combined with a codeplate that has 0.2 mm pitch slits. Signals fromeach pair of the 4-element photodiode inputs

are compared and discriminated to output a2-phase digital signalSmall packageA smaller package than conventional prod-ucts reduces the component mounting area

Features:This encoder module uses a LED and a newlydeveloped photo IC containing a narrow-pitch4-element photodiode.


ANODE

CATHODE

LED PHOTO IC

-+

-+

PREAMP OUTPUT BUFFERGND

PHOTODIODEHYSTERESIS COMPARATOR & BUFFER COMPARATOR

PD A

PD B

PD C

PD D

VOB

VOA

Vcc

Block diagram

(Ta = 25 °C, Vcc = 5 V, unless otherwise noted)

IF = 10 mA

VR = 5 V

IF = 10 mA

IOL = 1 mA

IF = 5 mA, f = 10 kHz

IF = 5 mA, f = 10 kHz

IF = 5 mA, C L = 10 pF

IF = 5 mA, C L = 10 pF

IF = 5 mA

Parameter Condition

1.9

-

650

-

-

-

3.0

6.0

50

50

90

0.5

0.04

-

Max.Min.Symbol Unit

Forward voltage

Reverse current

Peak emission wavelength

Operating supply voltage

Low level output voltage

High level output voltage

Supply current 1

Supply current 2

Duty ratio

Phase difference

Rise time

Fall time

Maximum response frequency

Typ.

-

-

-

3.0

-

4.5

-

-

35

35

60

-

-

50

2.4

10

-

7.0

0.4

-

-

10

65

65

120

2

0.3

-

VF

IR

p

Vcc

VOL

VOH

Icc1

Icc2

tAH/tAP

tBH/tBP

AB

tr

tf

f Max

V

A

nm

V

V

V

mA

mA

%

%

degrees

s

s

kHz

Input(LED)

Output(Photo IC)

Transfer characteristic


Vision 2007 (Stuttgart / Germany)06.11. - 08.11. 2007

UKAEA (Didcot / UK)08.11. 2007

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15 C10439

Photodiode Modules

16 C10442 Series, C10443 Series

PSD Modules


The C10439 series are high-precision pho-todetectors that combine a Si photodiode andcurrent-to-voltage conversion amp. Threedifferent active areas are available.

Easy handlingAnalog voltage output allows observation ofsignals with a voltmeter, etc.Two switchable photo-sensitivity rangesHighly accurate output can be obtained byselecting the proper sensitivity range thatmatches the incident light level to be detectedCompact sizeOnly half the size of a business card. It at-taches directly to an optical mount rod (M4)

Features:


These are high-precision position-detectorscombining a PSD and current-to-voltage con-version amp. Six types with different activeareas are available.

(Ta = 25 C)

Active area sizePeak sensitivity wavelength

Supply voltageDimension

High range, λ = λpLow range, λ = λpIo = 1 mAHigh range, -3 dBLow range, -3 dB

Parameter Condition C10439-012.4 x 2.4

C10439-025.8 x 5.8

960500

50 to +Vcc - 0.5

DC to 10DC to 1000±5 to ±12

19 (W) x 52 (H) x 46 (D)

C10439-0310 x 10

Unitmmnm

Vmm

V

Symbol-

λp

Vcc-

Photo sensitivity

Cut-off frequency

Output amplitude voltage

S

Vout

fc

mV/nW

Hz

0

Specifications

Built-in PSDActive area sizePeak sensitivity wavelengthPhoto sensitivityOutput amplitude voltageCut-off frequencySupply voltageDimension

Parameter CSymbol--

λp

SVout

fcVcc

-

C10442-01

1 x 6920

-55 *1

0 to -Vcc + 1.1DC to 16 *2

±5 to ±1222 (W) x 44 (H) x 40 (D)

C10442-03C10442-02

1 x 3 1 x 121-dimensional PSD

*1: λ = λp*2: -3 dB

Specifications

WAVELENGTH (nm)

PH

OT

O S

EN

SIT

IVIT

Y (

mV

/nW

)

(Typ. Ta = 25 °C)

200 400 600 800 1000 12001

1000

100

10

L RANGE

H RANGE

Spectral response

Productronica 2007 (Munich / Germany)13.11. - 16.11. 2007

Medica 2007 (Duesseldorf / Germany)14.11. - 17.11. 2007

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Easy handlingAnalog voltage output allows observation ofsignals with a voltmeter, etc. Output signalscan be easily converted to position informa-tion by using dedicated signal processingunits (C10459, C10460), which are availableas optional accessoriesHigh precision outputInternal low-noise amp ensures high preci-sion outputCompact sizeOnly half the size of a business card. Itattaches directly to an optical mount rod (M4)

Features:

10443-01

-60 *1

0 to -Vcc + 1.1DC to 16 *2

±5 to ±1234 (W) x 44 (H) x 40 (D)

C10443-03 Unit-

mmnm

mV/ WV

kHzV

mm

96012 x 12

9204 x 4 9 x 9

2-dimensional PSDC10443-02

(Ta = 25 °C)

WAVELENGTH (nm)

PH

OT

O S

EN

SIT

IVIT

Y (

mV

/ W

)

(Typ. Ta=25 ∞C)

3000

80

70

60

50

40

30

20

10

500 700 900400 600 800 11001000

C10442-01/-02/-03

C10443-03

C10443-01/-02

Spectral response

17 C10459, C10460

Signal Processing Units for PSD Modules

Converts the output from a PSD module(C10442/C10443 series) into position signalsand outputs them in both analog and digitalformat. It also supplies power to the PSDmodule.

(Ta = 25 °C)

Compatible PSD modulesAnalog outputDigital outputMinimum measurement time interval

Supply voltageDimension

Parameter C10460C10443-01/-02/-03

Unit-

V-

ms

Vmm

C10459C10442-01/-02/-03

-10 to +10Conforms to RS-232C (16-bit)

2

+9 to +18150 (W) x 30 (H) x 100 (D)

Specifications


Both analog and digital outputsAnalog output: Connecting the output con-nector to a voltmeter shows an output voltagethat directly represents the position informa-tion. The output voltage indicates a positionfrom the center of the PSD (1 V = 1 mm)Digital output: High-resolution digital output(16-bit) allows serial connection (RS-232C)to a PC. Position information can be easilyloaded into a PC via the sample softwarethat comes with the unitAC adapter (+12 V) operationOperates by connecting the included ACadapter

Features:

CPUA/D

CONVERTER

RS-232CLINE

DRIVERPC

SAMPLESOFTWAREPOWER SUPPLY

PSDADDITION/

SUBTRACTIONAMP

DIVIDERIC

VOLTMETER

SIGNAL PROCESSING UNIT FOR PSD MODULE C10459, C10460

CURRENT-TO-VOLTAGE

CONVERSION AMP

PSD MODULEC10442/C10443 SERIES

AC ADAPTER

Set-up example

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19 C10508

APD Module


This APD module is ideal for making high-sta-bility measurements while being operated ata high gain. This module consists of an APD,current-to-voltage conversion circuit, high-voltage power supply circuit, temperaturecompensating circuit, and a microcomputer.

18 C10475

Signal Processing Unit for Photodiode Module

Converts the output from a photodiode mod-ule (C10439 series) into digital signals. Alsosupplies power to the photodiode module.

(Ta = 25 °C)

Digital outputMinimum measurement time intervalSupply voltageDimension

Parameter RatingConforms to RS-232C (16-bit)

50+6 to +14

110 (W) x 30 (H) x 100 (D)

Unit-

msV

mm

Specifications


High-resolution digital output (16-bit)High-resolution digital output (16-bit) allowsserial connection (RS-232C) to a PC.Measurement data can be easily loaded intoa PC via the sample software that comeswith the unitChoice of internal battery (+9 V) or AC adapter (+12 V) operationOperates from internal battery or dedicatedAC adapter supplied with the unitData logger functionMeasurements can be recorded in the internalmemory (data logger function) by connect-ing the unit to a PC. After setting the logger,measurements can be recorded withouthaving to connect to a PC

Features:

PC

AC ADAPTER

PHOTO-DIODE

SIGNAL PROCESSING UNIT FOR PHOTODIODE MODULE C10475

POWER SUPPLY

PHOTODIODE MODULE C10439 SERIES

A/DCONVERTER

CURRENT-TO-VOLTAGE

CONVERSIONAMP

CPURS-232C

LINE DRIVER

SAMPLESOFTWARE

Set-up example

Temperaturestability of gain

Spectral responserange

Frequencybandwidth

Communication

D

Gain

At gain = 2500 to +40

Parameter Condition S

Adjustableor seria

4

Specificatio

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20 S10359

Si Photodiode

High gain up to 250 times (previously up to30 times) due to digital temperature com-pensationThe internal microcomputer compensatesfor temperature-dependent variations in theAPD gain, so that stable measurements canbe made even at a high gain of 250 times (0 ºC to +40 ºC) Easily adjustable gainGain is adjustable in 5 steps by switch, orlinearly adjusted with an external commandvia serial communicationSupply voltage: +/- 5 VRequired supply voltage is +/-5 V, makingthe module easy to connect and use

Features:


The S10359 is a high-reliability Si photodiodewith stable sensitivity to ArF excimer laser (λ = 193 nm).

Highly reliable operation even during expo-

sure to ArF excimer laser (λλ = 193 nm)Newly developed ultra-thin PN junction tech-nology achieves high reliability during expo-sure to ArF excimer laser beams No deterioration in UV sensitivity due tooutgassingUnique package structure contains no resinmaterial and will not cause outgassing, whichmight lower UV sensitivityLarge active area: 10 mm x 10 mmThe active area of 10 mm x 10 mm (identicalto S9683) is divided into 4 segments

Features:

RE

LAT

IVE

SE

NS

ITIV

ITY

(%

)

NUMBER OF SHOTS

[Typ. ArF excimer laser, 0.1 mJ/cm2/pulse, f=100 Hz, =193 nm, pulse width=15 ns (FWHM)]

5 x 1061 x 1060

1 x 107

40

20

60

80

100

120

CONVENTIONAL TYPE

S10359

Sensitivity change after exposureto ArF laser

(Ta = 25 °C)

Spectral response rangePeak sensitivity wavelengthPhoto sensitivityDark current

Rise time

Terminal capacitance

λ = 193 nmVR = 10 mVVR = 0 V, RL = 1 k10 to 90 %VR = 0 V

Parameter Condition Min.

-45-

-

-

Typ.

193 to 100076060

0.02

1

0.5

Max.

--

0.5

-

-

Unit

nmnm

mA/WnA

s

nF

Symbol

λp

SID

tr

Ct

Specifications

RESPONSE SPEED (Hz)

DC103

104

105

106

107

109

1010

108

SE

NS

ITIV

ITY

(V

/W)

AB

SO

LUT

E V

ALU

E

100 10 k10 1 k 100 k 1 M 10 M 100 M 1 G

2-stage thermoelectrically cooled APDDC to 5 kHz, -1.5 x 109 V/W

DC to 100 kHz-1.5 x 108 V/W

1 MHz to 1 GHz2.5 x 105 V/W

9 types are available with differentactive areas and wavelengths4 kHz to 100 MHz

-1 x 104 V/W

1-stage thermoelectricallycooled APD

10 kHz to 100 MHz2.5 x 105 V/W

DC to 10 MHz1.5 x 106 V/W

C4777-01

C5460-01

C5460

C5658

C5331 series C4777

DC to 10 MHz1.5 x 106 to 1.5 x 107 V/W

C10508

Sensitivity and response speed

(Ta = 25 °C)

DC to 10 M

Serial

Hz

-

Specification Unit

±5 Max. %

e by switch (5 steps)al communication

400 to 1000 nm

-

ons

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21 L10415 Series, L10526 Series

Newly Developed CW Laser Diodes

The λ = 940 nm has just been added to thefamily of 1 W – 2 W CW laser diodes.

The L10415 series (1 W) and L10526 series(2 W) are newThe Ïveloped CW laser diodeswith a peak emission wavelength λ = 940 nm,featuring high optical power of 1.0 W withboth Ø 9.0 CD package and OHS package,and 2.0 W with the OHS packages.These are single-chip, single element type, andthe emitting area is small (100 µm x 1 µm). The small emitting area makes it easier tofocus on a small spot with optics.The laser diodes can be used for variousapplications such as pumping of solid statelasers, material processing, medical instru-ments and many more.

22 C9536-01, H9958 Series

Power Meter for Photo Catalyst

The latest addition to our UV power meterrange are the H9958 sensor head and C9536-01 controller for photo catalyst applications.

The photo catalyst material has to be excitedby a UV light source shorter than 380 nm.Performance of the photo catalyst is deter-mined by light absorption, it is therefore nec-essary to clarify the lamp type (or spectralresponse depending on lamp type).

With its flat sensitivity in the UV range from300 nm to 410 nm and no response in thevisible range, it is possible to measure lightpower without correction.This is required forinternational traceability.

Current line-up of the wavelength for Hamamatsu > 1 W CW laser diodes is, 808 nm, 830 nm, 940 nm and980 nm

Author: Yasuhiro Hayashi Hamamatsu Photonics K.K.

Peak emission wavelength 940 nm +/-3 nmHigh radiant flux density emitting area size:100 µm x 1 µmHigh stabilityLong lifeCompact

Features:

Pumping source for solid state lasersMaterial processingMedical instrument

Applications:Author: Lorraine Rolland Hamamatsu Photonics France

Measurement modeintegration

Weight

Sensor head H9958

Spectral response 310 nm to 380 nmEffective areaMeasurement range 1 µW /Power supply internal

one shot mode that measurescontinuous mode that continuou

mode that display(it is possible to meas

External interfaceDimensions sensor head 75 m(W x H x L) controller 110 m

sensor headcontroller

Three types of packages are available Ø 9.0CD (suffix number is -04), side out OHS (-06)and head out OHS (-07).

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23 LC-L1

A New Type of UV-Light Source

Hamamatsu introduce a new type of UV-lightsource, the LC-L1.

The LC-L1 uses UV-LEDs at 365 nm with morethan double the intensity of conventional UV-LEDs. The UV-light intensity is 4600 mW/cm2.With a lifetime of more then 20,000 hours, thetime consuming replacement of lamps nowbecomes obsolete.

The LC-L1 can support up to four fiber out-puts with individual control of each outputpossible. The UV-light intensity can here bemonitored with a direct connection to a UVchecker at the light source.

The applications for the LC-L1 are UV-gluingof adhesives and UV excitation of analyticalsubstances (fluorescence).

Author: Klaus Peter Aicher Hamamatsu Photonics Germany

Stable for long term operation and no deterioration by UV lightCompact size and portable

Features:

C9536-01 Angular response

C9536-01 Spectral response

H9958-01

300 nm to 410 nmdia = 10 mm

cm2 to 100 mW / cm2

battery and AC adapters power each time START is pressedusly measures power in 1s intervalss integration result of a fixed timeure it until five minutes every second)

RS-232Cm x 55 mm x 18 mm

mm x 75 mm x 20 mmapprox. 160 gapprox. 285 g

Radiant intensity

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25 L10290

High Power UV-VIS Fiber Light Source

Light measurement technology is used inmany applications including industrial andmedical diagnosis, environmental monitoringand academic fields.

Hamamatsu introduce a newly developedUV-visible light source, the L10290. Using a“high brightness lamp”, the L10290 providestwice the radiant intensity compared to con-ventional models.

The UV-VIS fiber light source contains a highstability deuterium lamp and a tungstenhalogen lamp in a compact case and outputlight through a light guide.

The deuterium lamp and tungsten halogenlamp are precisely assembled into a dedicatedlamp housing to ensure optimum operation,thus allowing high stable lamp operation overa long service life without any special align-ment.

It's compact and lightweight making it idealfor use with all types of portable devices.

Author: Roberto Calcaterra Hamamatsu Photonics Italy

24 Super and Ultra Bialkali Photocathodes

One Step Beyond

The newly developed super bialkali (SBA)and ultra bialkali (UBA) photocathodes havepushed the boundaries of photomultiplier tubequantum efficiency (QE).

Generally, bialkali photocathodes offer a typ-ical quantum efficiency of 27 % at peakwavelength. The super bialkali photocathodefeatures a typical quantum efficiency of 35 %.This results in approximately 30 % higheroutput signal when compared to a standardbialkali photocathode.

In the case of the ultra bialkali photocathode,60 % higher signal is achievable due to itstypical quantum efficiency of 43 %.

These new types of photcathodes will initiallybe applied to selected photomultiplier types,such as the 2” R6231 and 3” R6233. Metalpackage photomultipliers will follow in thenext few months.

The excellent quantum efficiency of thesenew photocathodes will offer huge benefitsin applications such as gamma cameras formedical diagnosis, environmental analysersand high energy physics experiments.

Author: Siegfried Schmid Hamamatsu Photonics Germany

Spectral response

Quantum efficiency

Photocathode Type Availability

Super bialkali (SBA) 32 % 35%

QE at peak wavelength

Min. Typ.

Ultra bialkali (UBA) 38 % 43% Metal package PMT TO-8 type and 28 mm square type

Metal package PMT TO-8 type, 28 mm square type and 28 mm to 76 mm diameter head-on PMT (glass bulb type)

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26 L10366

New High Intensity UV Light Source Module

Hamamatsu is pleased to introduce the newL10366 high intensity UV light source module.The D2 lamp is supplied with MgF2 window,facilitating the emission of short wavelengthvacuum ultraviolet radiation, down to 115 nm,thus the L10366 module provides high inten-sity output over the 115 nm to 400 nm wave-length range. The L10366 features a new highpower, high stability, long lifetime deuterium(L2D2) lamp, which emits up to 4x the inten-sity, compared to our previous VUV sources.For vacuum UV applications, the lamp hous-ing can be supplied with a choice of industrystandard vacuum flanges, to allow easy inte-gration into customer’s existing vacuumequipment. This new VUV lamp module hasalso been designed to eliminate the need forwater-cooling, which was required for use withour previous generation of 150 Watt highpower D2 lamps. The L10366 features forcedair-cooling, an integrated fan and all drive andcontrol electronics, making this unit “plug andplay” for the end-user.

Author: Tim Stokes Hamamatsu Photonics UK

High UV intensity (4x compared to previousVUV sources)Emits short wavelength VUV down to 115 nmLong life time (2000 hours guaranteed at230 nm)Very high output stability (0.05 % peak topeak fluctuation)Air cooled (no water re-circulation needed)No optical alignment needed

Features:

UV spectrophotometerFluorimeter and spectrofluorimeter UV radiation tolerance of materialsExcitation light sourceGermicidal light sourceOptical CVDPhoto-ionisation (PID)Electrostatic removal (for semi-conductorwafers, LCDs, etc.)

Applications:

Dimensional outline

High output: twice the intensity (comparedto conventional types)High stability: fluctuation 0.004 %p-p typ.(equivalent to 2 x 10-5 A.U.)Long life lamp: 2000 hoursExternal controlShutter function

Features:

SpectrophotometryEnvironmental measurementAbsorption spectrum measurementPharmaceutical testingFilm thickness measurement

Applications:

Spectral distribution

UV resistant

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27 LF1

High-Power pulsed Light Source

Hamamatsu presents the LF1, a new high-power pulsed light source.

This new high-power pulsed light source con-sists of a 40 W Xe-flash lamp, power supplyand a control circuit. The light is coupled toa light fiber where a wide variety of differentfibers (single-, multi-fibers) can be used. Thespectral range is 290 nm to 1600 nm withpulse flashes of 2 µs to 4 µs (FWHM), with alifetime of about 5 x 107 flashes and a maxi-mum repetition rate of 70 Hz.

When compared to a conventional Xe-highpressure lamp, the LF1 pulse peak intensityis 2000 times higher than a 35 W Xe lamp.

The repetition rate and intensity can be con-trolled via a computer, allowing synchroniza-tion with an external trigger e.g. with CCDcameras.


Emission pulse waveform

Spectral radiation

1.28 J

External control terminal

Parameters Value

Max. lamp input power 40 W Max. lamp input energy(per flash)Max. repetition rate 70 HzFlash duration (FWHM) 2 µs to 4 µs Light output stability +/- 5 %Spectral range 290 nm to 1600 nmLamp supply voltage 300 V to 1000 VLamp life time 5 x 107 flashesInput voltage (AC) 100 V or 240 VWeight Approx. 6.1 kgDimensions (W*H*D) 120 x 230 x 300 mm3

RS-232C; D-sub 25-pin connector

LF1 conforms to CE EMC directives andCISPR Class A.

The LF1 is ideal for applications such as opticalinspection, high-end strobe light source andfor UV excitation light source (fluorescence).

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28 H10330-25, -45, -75

NIR PMT Module

Weak signals in the near infrared region areoften difficult to detect because most sensorsbetween 1000 nm and 1700 nm have eitherno gain or a very small active area. For manyyears Hamamatsu has been developing pho-tomultiplier tubes with photocathodes that candetect radiation in the 950 nm to 1700 nmregion of the spectrum. These devices havelarge detection areas of 1.6 mm and a noise-free gain, which is typically one million. Theunique dynode structure of the photomultipli-ers generates a rise time of 900 ps and atransit time spread (TTS) as short as 300 ps.This makes these devices ideal for measuringlow levels of light coming from singlet oxygen,nanoparticles and carbon nanotubes. Signalprocessing can be performed using photoncounting or by analog means. For fluorescencelifetime measurements or for photon migrationstudies, these devices can be used in a time-correlated photon counting mode (TCPC). TheH10330 series of the NIR PMT module pack-ages an infrared photomultiplier in a vacuum-sealed housing. Thus, the need for a vacuumpump is eliminated. A peltier cooler is used tocool the photomultiplier. The system requiresneither liquid nitrogen nor water. It also reducessystem cool down to 20 minutes. For colli-

Author: Ken Kaufmann Hamamatsu Photonics U.S.A

NIR sensitivityNoise free gain: 106

Rise time: 900 ps TTS: 300 psEffective detection area: 18 mmCompact size and lightweight

Features:

NIR fluorescence and chemiluminescenceDiffuse optical tomographyCarbon nanotube emissionNanoparticle emissionSinglet oxygen studiesTime correlated single-photon counting

Applications:

Gain

Spectral response

mated light the effective active area is 18 mm.To minimize setup time, optional adapters foran optical fiber or one for a monochromatorare available. For the first time we have amodule with a cutoff at 1200 nm. For meas-urements below about 1200 nm, this module,the H10330-25 has the advantage of lowerdark current.

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29 R8900-00-C12, R8900U-00-C12, R8900-00-M4, R8900-00-M16

New Position Sensitive Photomultiplier Tubes

For many years Hamamatsu has been manu-facturing a wide variety of multi-channel pho-tomultiplier tubes. The introduction of suchtubes stimulated new markets dedicated toscintillation mammography scanners and com-pact animal PET scanners. It has also enabledfurther development of gamma cameras andother systems for radiation monitoring andmedical research.

These applications put high demands on theperformance of photomultiplier tubes such ashigh energy resolution, high spatial resolution,good uniformity, high stability, etc. In order tomeet such requirements, Hamamatsu con-stantly develops new photomultiplier tubesand improves their performance.

To meet the continual demands of such appli-cations, Hamamatsu has expanded their rangeand introduce a new series of position sensi-tive photomultiplier tubes.

The new R8900 series features high spatialresolution, wide effective area and are light-weight and compact. The R8900-00-M4incorporates a 4 (2 x 2) channel multianodethe R8900-00-M16 incorporates a 16 (4 x 4)channel multianode in a 26 mm square enve-lope, while R8900-00-C12 and R8900U-00-C12 have 6 (X) + 6 (Y) cross plate anodesarranged in two intersecting layers. These newseries of photomultipliers have a bialkali pho-tocathode with a spectral response from 300nm to 650 nm, which fits the emission spectraof most scintillators. The R8900U-00-C12 issupplied with an insulation cover.

The R8900 series have a compact metalchannel dynode construction designed usingHamamatsu´s sophisticated design capabili-ties and manufactured by our unique microma-chining technology. The overall length of eachtube is quite short because metal channeldynodes are very thin and assembled in closeproximity to each other. So, it delivers fastresponse and features very low cross-talk dur-ing secondary electron multiplication. Thussuch metal channel dynode structure appliedin R8900 series is ideal for position sensitivemeasurements.

Author: Andrey Makarets Hamamatsu Photonics Norden

High spatial resolutionWide effective areaFast time responseCompact and lightweight

Features:

Animal PET (positron emission tomography)Compact gamma cameraScintillation mammography

Applications:

Gain

Spectral response

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30 C9744

Photon Counting Unit

For low light measurements, photon countingusing a photomultiplier tube is superior in termsof stability, detection efficiency and signal tonoise ratio when compared to conventionalanalog signal measurement.

Photon counting units are used to convert thesingle photoelectron pulse from the PMT intoa 5 V TTL compatible pulse which can beprocessed by digital devices.

After initial amplification, the photoelectricpulses have to be separated from the lowernoise pulse and the higher level pulses gener-ated by cosmic radiation.

High count rates demand powerful photoncounting units. The high-speed electronic cir-cuit of the C9744 allows measurements withhigh output linearity, up to 107 s-1.

If the count rate is higher than 10 MHz, aprescaler can divide the number of counts by10, eliminating the need for a high-speedcounter.

The photons can be counted by simply con-necting a stand-alone or a PC-based counterto the photon counting unit.

Author: Dieter Habben Hamamatsu Photonics Germany

Dimensional outline

Set-up examples

Count linearity

Pulse-pair resolution

Supply voltage

Parameter C9744 Unit

Input impedance 50 OhmDiscrimination level (input conversion) -0.4 to -16 mVRequired PMT gain 3 x 106 -Prescaler ÷1 ÷10 -

÷1 4 x 106 s-1÷10 1 x 107 s-1÷1 25 ns÷10 10 ns

Output pulse CMOS 5 V, POSITIVE LOGIC -+5.0 V +/- 0.2 V, 130 mA / -

-5.0 V +/- 0.2 V, 50 mADimensions (W x H x D) 90 x 32 x 140 mm

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31 C10413

Color X-Ray ScannerColor your X-Rays and See More!

The C10413 color X-ray scanner opens newdimensions in the field of X-ray.X-ray users can now detect previously hiddendetails.

Usual X-ray devices only show the X-ray pat-tern of the object. In these grey shade imagesmany details are hidden.

However X-rays contain a lot more information.The X-rays experience different degrees ofattenuation depending on the kind of materialthey are going through. The C10413 canmeasure these different energies of the X-raybeams and thus it can show the compositionof the object in a clear color image. Unlikeconventional X-ray images which can only

show the density and the structure of theobject. The X-ray color sensor allows us afascinating view on the composition of theobject from its different materials.

Besides X-rays, the energy differentiationmethod also offers benefits for measuringother particles like radioisotopes. For example,for the highly detailed spectrum measurementof gamma rays and X-rays.

What do the people at Hamamatsu put insidethe C10413?

The 64 elements CdTe array of the C10413makes a direct energy conversion with highradiation detection efficiency.

An ASIC contains five comparators for eachpixel, which allows for the individual choice offive different energy levels. A signal processorprepares the output image. Connection to thePC is made via the USB interface. The controlsoftware can store all measurement resultsfor later processing

Author: Dieter Habben Hamamatsu Photonics Germany

Simultaneous measurement of images at different energy regions

Gamma-ray and X-ray spectrum measurement

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32 L10101

New Sealed Type 100 kV Microfocus X-Ray Source

The new L10101 was developed using the lat-est optical design techniques and Hamamatsustate of the art “sealed tube” microfocus X-raytechnology.

The microfocus X-ray source unit is a stand-alone unit, which can also be used as a build-ing block for integration into a system.

Applications are wide ranging and includesemiconductor metrology to improve yield andchip quality, complex electronic devices analy-sis such as BGA quality test and other in-lineX-ray inspection systems. The focal diameterof the microfocus tube is 7 µm (down to 5 µmat 4 W). This new source offers excellent sta-bility of spot size, spot position and intensity.


Dimensional outline

Application example

Author: Alberto Verga Hamamatsu Photonics Italy

A 6.8 mm short FOD (focus to object distance)allows you to acquire X-ray images withhigher magnification ratioA sealed type X-ray tube with 5 µm focal spotallowing clear images even at high magnifi-cationMaximum output power 20 W

Features:

X- ray CT systemsNon-destructive inspection system (in-line/off –line) Applicable objects:- Electronic components- Printed circuit board- Plastic and metal components

Applications:

Specifications

Unit

Max. voltage kV 100 Max. current µA 200 Max. output W 20 Focal spot size µm 5 to 7 (4 W) / 30 (20 W)Focal spot switch Auto control by outputFOD mm 6,8Beam angle degree 39Control method - PC direct control

Specifications

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33 C4880-50-26WD

X-Ray Diffractometer for Material Science and Imaging usingHamamatsu C4880-50-26WD Camera

At the German based DESY synchrotron andits Hamburg synchrotron laboratory HASYLAB,a new X-ray diffractometer equipped with anovel CCD camera imaging system has beeninstalled for X-ray diffraction investigations ofpolycrystalline materials.

Several physical properties of materials arenot only given by their original compositionbut may also be modified during processingand use. Understanding and consideration ofthese processes and their impact on theirstructure and the relation to their performanceare very important for designing, developmentand further improvement of materials.

Several microbeam techniques with synchro-tron radiation were developed in the past.Most of them faced disadvantages of timeconsuming scans and limitation with dynamicprocesses and the need for extremely precisegoniometers in order to ensure that the samesample region is always investigated.

Now, a newly developed experimental tech-nique using a microchannel plate (MCP) as acollimator array and a position sensitive detec-tor, namely a CCD-camera, solved this prob-lem by defining the locations on the samplenot at the primary side between source andsample but at the secondary side betweenthe sample and detector. Each MCP channelacts as a collimator tube pointing to a certainlocation of the sample and the array of theparallel MCP tubes provides an entire intensitydistribution or image as a result of the radia-

tion diffracted by the crystallites in the sampleand possibly the fluorescence radiation too.This raw data is used to determine the distri-bution of certain elements or even differentcompounds of the same element and givescomprehensive and important informationabout the material under test.Behind the MCP collimator a special CCDcamera is used to create an actual image ofthe X-ray diffraction patterns. Here theHamamatsu C4880-50-26WD digital CCDcamera is used with the following technicalspecifications:

Experimental setup:The sample (2) on a goniometer (3) is irradiatedby a collimated monochromatic X-ray beam (1).The diffracted beam (5) from the whole illuminatedarea (4) is collimated by a microchannel plate(MCP) (6) mounted into a Pb-plate (9). The colli-mated beam (7) is detected by the HamamatsuC4880-50-26WD digital CCD camera, whichcan be shifted allowing several exposures.

X-ray diffractometer principle

Technical drawing

Specifications:

Type: C4880-50-26WD

Back-thinned full frame transfer Image device CCD with Beryllium-window

with MCPEffective area 13.3 mm x 13.3 mmNumber of pixel 1024 x 1024Pixel size 13 µm x 13 µmQ.E. >90% @ 3.235 keVExposure time 20ms (min.)Frame rate 3.05 HzDark current 0.0012 e-/px/sReadout noise 4 e- r.m.s.

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Author: Bertram Lohmüller Hamamatsu Photonics Germany

The asymmetry (marked by the arrows) resultsfrom a steep residual stress gradient in thesample

In the images the cell structure and lateralinhomogenity of the material is visible. Thesample area here is 9.0 mm (horizontal) x 8.1mm (vertical).

The PETRA ring (positron electron tandem ringanlage) has a total length of 2304 m and allowsthe acceleration of electrons and positrons upto 19 GeV.

The HERA ring (hadron electron ring anlage)has a total length of 6336 m and allows theacceleration of electrons up to 27.5 GeV andprotons up to 920 GeV.

The special camera, which is used with thisapplication, is a result of an intense coopera-tion between the customer and its specialrequirements and Hamamatsu SystemsDivision engineers with their expertise andexperiences. It is an excellent example of howa solution was provided, which could not havebeen achieved by simply using standard stockdevices. A new application was transferredfrom theory into reality, expanding materialresearch which leads to new industrial prod-ucts.

This image was taken using a light-opticalmicroscope after metallographic preparationand etching. The cell structure is clearly visible.The small white and dark islands are the restof the eutectic phase and pores of a few 10µm in size.

C4880-50-26WD CCD camera mounted at the newdiffractometer set-up

Microstructure of a random cut of nickel basedsuper alloy CMSX-4

X-ray diffraction image of the nickel based superalloy CMSX-4 with angle setting of 44.23°

X-ray diffraction image of the nickel based superalloy CMSX-4 with angle setting of 44.39°

Typical intensity profile of the diffractedbeam X-airborne image of DESY synchrotron facility

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34 C10400

New OEM X-Ray Line Scan Camera

The new C10400 camera is the latest additionto our X-ray linescan camera series.

Equipped with a 10-bit A/D conversion, theC10400 also provides all the benefits of ourstandard camera series, C9750. Featuresinclude high-speed read-out, low energyresponse down to 10 kV and 200 µm pitch size.CameraLink interfaces are available as anoption.

For many applications in the field of qualityassurance, a 10-bit camera is the solution foracquiring high quality images. The C10400offers an advanced OEM camera system ata very attractive price.

Author: Stefan Kappelsberger Hamamatsu Photonics Germany

Low energy type (10 kV to 40 kV) optionHigh speed optionsCameraLink interface option

Features:

Quality assurance of foodstuff and agriculture products In-line inspection of electrical componentsProduction control in the wood industry,aluminium die-casting, packaging, etc. Sorting in recycling processesTyre inspectionSecurity inspectionMedicine and medical industry

Applications:

35 C9750 Series, C10400 Series, X-Ray

X-Ray in Agriculture – Application N

The use of X-ray non-destructive testing hasbecome more widely used in various applica-tion fields. Successful experiences in applica-tions such as electronic board inspection andfood contamination suggests that good resultscan be obtained in the agricultural field.

X-ray absorption imaging can be a very effec-tive technique to sort fruits, such as detectingrotten portions that are not yet detectable byvisual inspection. For example, X-ray com-puted tomography (CT) can be used to monitorthe internal quality changes in peaches duringripening. X-ray absorption allows the determi-nation of physiochemical contents: moisturecontent and titratable acidity decreased signif-icantly with post-harvest ripening time, whilepH and soluble solids increased with post-harvest ripening time. The X-ray absorptionis directly related to density, moisture con-tent and titratable acidity [1].

X-ray inspection is an effective method ofinspection of walnuts, pistachio nuts andwheat kernels for internal insect infestation;insect infestation creates tunnels within the nutand this corresponds to a reduced density ofthe natural content of the nut and to thereplacement of that content by insect debrisand air, which have lower X-ray absorptionproperties [2].

Specifications:

40 kV to 160 kV

Sensor element pitch

Detection method Scintillator Effective X-ray tube voltage range 1

0.2 mm / 0.4 mm / 0.8 mm / 1.6 mm

A/D conversion 10 bits1 Low kV (10 kV to 40 kV) is available as option M 10313-01High kV (> 160 kV): please contact Hamamatsu office

Frame

RS-232C cable are optional.Please

System configur

Detection of rotten portions by visual inspectionI

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Flat Panel Line-Up

Note

The addition of X-ray inspection systems tothe existing optical inspection systems enabledetection of voids that are likely to be asso-ciated with the presence of various bacterialor fungal rots in onions [3].

The use of an X-ray source and the HamamatsuC9750/C10400 series X-ray linescan camerasallow easy integration of a digital X-ray inspec-tion system into existing fruit sorting/process-ing lines. Hamamatsu’s X-ray flat panel sensorline-up fully satisfies the performance needsof a CT system.

[1] Barcelon E.G.; Tojo S.; Watanabe K., X-ray computedtomography for internal quality evaluation of peaches,journal of agricultural engineering research, volume 73,number 4, August 1999, pp. 323-330(8)

[2] A. Sim; B. Parvin; P. Keagy, invariant representationand hierarchical network for inspection of nuts from X-rayimages, neural networks, 1995. Proceedings., IEEEinternational conference

[3] E. W. Tollner; R. D. Gitaitis; K. W. Seebold; B. W. Maw,experiences with a food product X-ray inspection systemfor classifying onions, applied engineering in agriculture,vol. 21(5): 907-912.@2005

Author: Francesco Giovenale Hamamatsu Photonics Italy

36 C10000-301, -401 (Under Development)

TDI Cameras offer Sensitivity and Line Rate Breakthrough

Hamamatsu Photonics is expanding its rangeof TDI (time delay integration) cameras. WithTDI, each line of the sensor is synchronisedwith the movement of an object in such a waythat as the image moves from one line to thenext, the integrated charge transfers alongwith it. This means higher sensitivity can beachieved compared to single line scan cam-eras. Alternatively, it allows you to increase lineframe rate in direct proportion to the numberof rows, whilst maintaining sensitivity.

Furthermore, our TDI cameras utilise “back-thinned” technology. This provides 90 % peakquantum efficiency and direct UV sensitivity.This is around double (at peak wavelength)and about 8 times (in the UV) compared tosome front-illuminated CCDs.

The line up now includes the C10000-301 with1024 pixel x 128 pixel and the C10000-401with 2048 pixel x 128 pixel, housed for easyhandling. Both cameras offer selectable 12/8-bit A-D convertor and bi-directional scanning,with line rates up to 50 kHz.

Since the sensor itself is also manufacturedby Hamamatsu, availability, cost effectivenessand technical support can be assured. It alsomeans the range of cameras will increase inthe future, as we complete development ofsensors with different pixel numbers. Pleasecontact us should you have a specificrequirement.

The features of the C10000 series make themideal for applications in low light level andhigh-speed industrial inspection, particularlywhere UV and NIR sensitivity are required. Thecameras offer the optimum solution for theinspection of high volume products such asflat panel and LCD displays, web inspection,electronics and PC-board inspection andbiomedical instrumentation.See also page 12 to 15 for TDI sensors and cameras.

Author: Craige Palmer Hamamatsu Photonics U.K.

grabber board

contact with us about connector formats.

ration

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37 C10054 Series

New Intensified CCD Cameras

Intensified cameras are very useful in applica-tions where the number of collected photonsis low because of the extreme short exposuretime needed or ultra-low-light conditions.

The new C10054 camera series features veryhigh gain and high-speed shutter functions,allowing a minimum shutter time of 5 ns, in anew compact design.

A new readout format is available. Progressivescan allows easy synchronisation between theshutter time of the image intensifier and the

exposure time of the CCD chip which was notpossible with conventional TV format types.Therefore, the problems generally associatedwith the use of intensifier phosphor screensin applications such as ultra-fast tracking arereduced.

Third generation highly efficient GaAs or GaAsPand wide band multialkali photocathode pro-vide easy solutions for UV to near IR imaging.

Author: Brice Villier Hamamatsu Photonics France

2 times more compact camera head thanprevious versionProgressive scan type availableHigh speed gated shutter: 5 ns minHigh sensitivity: GaAs/GaAsP photocathodeWide spectral range: multialkali photocathodeHigh resolution: 480 TV lines (C10054-x3 type)

Features:

High-speed light-emission phenomenaanalysis- Combustion flame of engines- Discharge event- Plasma- FluorescenceUltra low-light imaging- Microscope- 2D spectroscopy- Bio/chemiluminescenceHigh speed moving objects - Turbine blade motion- Inkjet- Night vision

Applications:

Set-up example

Spectral response

Imagesbeyond

your imagination

http://sales.hamamatsu.comFreephone: Europe 00 800 800 800 88 - [email protected], Denmark, France, Germany, Italy, Netherlands, North Europe & CIS, Poland,Portugal, South Africa, Spain, Switzerland, United Kingdom, RussiaFreephone USA 1-800 524 0504 [email protected]

The world leader in scientific cameras for low light applications introduces the new ImagEM UniversalElectron Multiplication CCD Camera.

For static to high speed fluorescence and luminescenceimaging, including Single Molecule detection, TIRFM,Confocal imaging, live cell multi-dimensional microscopyand many more.

• CCD and Electron Multiplication readout included• Lowest normal CCD readout noise of any BT512

camera on the market• Multiple pixel clocks in both readout modes• Air and water cooling, -65OC with air cooling and

-80OC with water cooling• Built-in real-time image processing• Special (Patent pending) synchronisation modes for

spinning disk confocals and multi-point confocals• Proprietary (Patent pending) single photon imaging

mode

Let us show you the advantages of the newcamera for all your applications.

www.imagemccd.com

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200 kHz repetition rateBuilt-in pulse generatorGaAsP photocathode

Features:

Analysis of high speed phenomena such as- PIV- Engine combustion- Plasma emission- Discharge phenomena

Applications:

38 C9548

Gated Image Intensifier Unit

We have extended our range of gated intensi-fier units with new high speed, high repetitionrate models. The C9548 series is designed forapplications requiring ultimate sensitivity atshort gating times down to 10 ns.

The image intensifier selection includes highquantum efficiency GaAsP and broad spec-tral multialkali photocathode, which have anactive diameter of 25 mm. Single stage anddual stage microchannel plate amplifiers arealso available.

The intensifiers can be operated in threemodes: continuous mode, standard gate modewith a gate repetition rate of 200 kHz and burstmode with a pulse interval down to 500 ns.

For ease of operation, the C9548 has a built-indelay generator and parameters can be con-trolled via a USB interface. The C9548 caneasily be connected to CCD or high-speedcameras with the use of a relay lens.

Author: Hubert Ortner Hamamatsu Photonics Germany

Set-up example

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Phosphor spectrum

39 C10149

Pulse Delay Generator

The C10149 is a pulse delay generator con-trolled by PC, specifically designed to deliverall timing signals used with intensified CCDcameras, high speed gated image intensifiersor photomultipliers. Using this pulse delaygenerator, one can make measurements while

eliminating excitation light and /or synchroniz-ing the lighting timing with the moving objectto be observed.

C10149 provides independent control for the3 channels pulse output, with one burst pulseoutput. PC control and power is provided bya USB connection.Pulse output on channels A,B,C have 4.5 Vamplitude positive or negative (selectable) andrepetition rate from 0.05 Hz up to 200 kHz.Pulse width is adjustable between 10 ns to20.45 s and delay time has the same range.Rise time/fall time for these output signals is5 ns max. C10149 also accepts TTL triggerinputs of between 0.1 Hz and 200 kHz, outputsA and B have 120 ns delay with these externalsignals.

Author: Roland Lefebvre Hamamatsu Photonics France

Timing chart

Set-up example for fluorescence measurement

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40 FA Navigation U10024-01

An Intelligent Hamamatsu Support Software for Failure Analysis

In the microelectronic market, the continuoussize reduction of chips, increasing number ofmetal layers, embedded functions on one chipconcept etc. all contribute to a growing com-plexity for achieving a reasonable yield to findthe root cause of a failure.

The advanced sub-micron design, with nodesdown to 45 nm, make it impossible for anyoptical system in the UV to IR range to providesufficient spatial resolution for superimposing,with high precision on a pattern image of thecircuit, the data extracted from emission micro-scope or laser stimulation tools such as ourXMOS line-up (Phemos, Themos, µamos).

To help that situation, Hamamatsu has devel-oped a failure analysis support software calledFA Navigation, which is a Windows-basedfailure analysis support software.

The main purpose of the FA Navigation toolsis to shorten the localisation of failure sites bycombining emission and laser analysis datawith CAD data created during the designingstage of the chips under test. The TAT (turn-around time) for failure analysis is significantlyreduced.

The FA Navigation software is interfacedbetween the control software of the FA tools(Phemos, Themos etc.) and a workstation (navi-gation server/graphic display station) includ-ing the layout viewer (circuit design).

Localizing the actual physical failure when youhave a number of photoemission sites, requiresa great deal of time and effort. The FA Naviga-tion features will help to narrow down the originof the failure by:

1. Extraction of the NETs passing through a region by setting signal locations as regionof interest (ROI). Those signal locations aregiven by the signatures of photoemission or thermal emission and/or OBIRCH as laser stimulation method.

2. The extracted NETs are then sorted accord-ing to the number of regions they are goingthrough, making it easier to narrow down the NETs responsible for the detected signal.

3. By integrating failure analysis signal data for multiple sources with CAD information,FA Navigation rapidly narrows down the selection of possible failure sites, with higherprecision.

4. FA Navigation provides a unique advan-tage by allowing you to superimpose 3 images levels.

One level for the data (emission, thermal orlaser stimulated data), a second for the patternimage and a third consisting of the CAD lay-out image.

Functions related to analysis of interconnec-tions passing through the data signatureregions are: NET extraction (network) NET highlight display Display of three-image superimposition

(data/layout/pattern)

Step 1: 3-point alignment

Step 4: Analyze NETs commonality Step 5: Display NETs

Step 3: measure emission, select ROIsStep 2: CAD overlay

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Author: Jean Roux Hamamatsu Photonics France

The functions related to CAD navigationinclude: Alignment function (conversion between

stage coordinates and CAD coordinates forthe design layout data)

Stage navigation function (moving stage ofthe FA tool to any position on the layout diagram)

Layout navigation function (display the cur-rent stage position of the FA tool on the CAD layout)

Standalone functions: To allow data analysis without FA tool to

perform later extractions on stored images

Smarter new developments: Development of more intuitive and interac-

tive user interface and search functions More sophisticated tracing after ROI set-

tings (more efficient net list search) etc.

FA-Navigation systems

41 THEMOS Mini

Thermal Analysis of Integrated Circuits

Thermal analysis helps to localize defects onintegrated circuits. For example, shorts withlow ohmic resistance can be found as theleakage current induces a small temperatureincrease at the shortage location.

THEMOS Mini is a dedicated system for ther-mal imaging consisting of a compact camerastand with x-y-z stage, a very sensitive ther-mal imaging camera with InSb detector andspecial microscope optics.

Three long working distance objective lenseswith 0.8 x, 4 x and 15 x magnification areincluded. The InSb detector has a resolutionof 320 pixel x 240 pixel and a NETD (noiseequivalent temperature difference) of 25 mK.

The table-top system is very compact andeasy to use. A software user interface similarto our PHEMOS software is used for imageacquisition and image analysis. Results aretypically available within a few minutes, thusthermal imaging has proven to be a very rapidfailure localization technique for applicationsfrom front- or backside of ICs.

A lock-in thermography option is available formore demanding applications requiring ulti-mate sensitivity.

Author: Hubert Ortner Hamamatsu Photonics Germany

Compact thermal imaging system for IC fail-ure localizationEasy to useHigh sensitivity and high resolution

Features:

Short circuit localizationDetection of abnormality of contact holesMicroplasma leakage detection in oxide layersTFT leakage detectionOrganic EL leakage detectionDefect localization on stacked dyes

Applications:

48

42 PMA-12

New Version of the Photonic Multichannel Analyzer (PMA)

The PMA-12 series instruments are com-pact, easy-to-use multichannel spectrometerdevices. They contain a light-efficient gratingspectrograph, a state-of-the-art multichannelsensor and electronics, all in a single compacthousing. There are several models available,ranging from the economic to the ultra-highsensitive or IR-capable.

These are multichannel devices, which meansthat spectrum recording is very rapid. If desired,it is possible to record as many as 50 full spec-tra per second or even more.

The light input is easily achieved using an opti-cal fiber or fiber bundle, provided as standard.Computer connection is via USB interface,which guarantees simple operation with almostany desktop or notebook PC. Software sup-plied as standard is for MS Windows andincludes a standalone operation program as

well as a small, easy-to-use software library(with sample code) for those customers whowant to develop their own software.

The philosophy of this product is to combinehigh performance with the easiest operationpossible. Each unit comes pre-calibrated fromthe factory and is ready to be used immediatelyafter receipt, without any need for spectral cal-ibration etc. Also, some models include cooledsensors, but the user does not need to takecare of any special procedures to operatethem.

Due to their sturdy design that uses no mov-ing parts (except a shutter) these products arealso very suitable for applications in industrialenvironments, where reliability, low mainte-nance profile and long life are required. OEMinquiries are welcome!

The supplied software, optional software mod-ules and optional accessories enable severaldifferent measurement modes such as: standard spectrum reflection transmission and absorption chromaticity of light sources chromaticity of objects microscope-based film thickness quantum yield

The PMA is ideal for applications in a very widevariety of scientific and industrial domainssuch as: fluorescence spectroscopy, chemilu-minescence analysis, chromatography, plasmaanalysis, water quality testing, color matching,food testing, LCD testing, LED testing, mate-rial production monitoring, and many more.

Author: Uwe Denzer Hamamatsu Photonics Germany

Some typical spectral sensitivity curves

Screenshot of standard software

Currently available models:

ultra-high sensitive models near-infrared models

C10025-01 C10027-01 C10027-02 C10028-01 C10028-02 C10029-01Model no. cost-effective fast gated

model models

Sensor type CCD BT-CCD BT-CCD InGaAs InGaAs I.I. + BT-CCDSpectral range (nm) 300 - 800 200 - 950 350 - 1100 900 - 1650 1600 - 2350 200 - 860Spectral resolution (nm) < 3 < 2 < 2 < 9 < 9 < 3

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NEWS 2007 Vol.1

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