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BEAM PROFILE MONITORS 1 Secondary Emission Monitor (SEM) for multi-plane ion beam profile measurement When particles of an ion beam hit a wire of the grid, secondary electrons are emitted resulting in an electrical current. Originally designed by the CEA/CNRS at GANIL (Grand Accélerateur National d'Ions Lourds), grids of W/Au wires are arranged together across the transversal plane of the beam propagation. Each wire collects a small part of the beam resulting in a signal which is proportional to each beamlet intensity. All the signals are multiplexed with a dedicated high performance data acquisition electronic system. The software displays a dynamic histogram of both planes with high precision both in intensity and position. Beam energy: from few keV/A to 100MeV/A Beam intensity: 1 nA to 100µA continuous beam mode or higher intensities when pulsed 2 . 47 wire per grid for different beam size: 23 or 47mm at 0,5 to 1 mm steps 70 or 87mm at 3, 2, 1mm variable steps Wire diam.: 70 to 150µm Flanges: 160 (CF/ISOF/KF) or 200 (CF) Actuator stroke: 120 or 210 mm Leak rate <10 -8 mbar.l.s -1 Profiler and actuator Fixed step grid Variable step grid Electronic Rack 3U - 84F Software visualisation 1 The SEM profilers are provided under a CEA/CNRS licence. 2 The temperature of a single wire is to be kept below 1200°C. Its diameter is customized to your application. WWW.PANTECHNIK.COM

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Page 1: BEAM PROFILE MONITORS1 - Pantechnik...BEAM PROFILE MONITORS1 Secondary Emission Monitor (SEM) for multi-plane ion beam profile measurement When particles of an ion beam hit a wire

BEAM PROFILE MONITORS1

Secondary Emission Monitor (SEM) for multi-plane ion beam profile measurement

When particles of an ion beam hit a

wire of the grid, secondary electrons are

emitted resulting in an electrical current.

Originally designed by the CEA/CNRS at

GANIL (Grand Accélerateur National

d'Ions Lourds), grids of W/Au wires are

arranged together across the transversal

plane of the beam propagation. Each wire

collects a small part of the beam resulting in

a signal which is proportional to each

beamlet intensity. All the signals are

multiplexed with a dedicated high

performance data acquisition electronic

system. The software displays a dynamic

histogram of both planes with high

precision both in intensity and position.

Beam energy: from few keV/A to 100MeV/A

Beam intensity: 1 nA to 100µA continuous

beam mode or higher intensities when pulsed2.

47 wire per grid for different beam size:

• 23 or 47mm at 0,5 to 1 mm steps

• 70 or 87mm at 3, 2, 1mm variable steps

Wire diam.: 70 to 150µm

Flanges: 160 (CF/ISOF/KF) or 200 (CF)

Actuator stroke: 120 or 210 mm

Leak rate <10-8 mbar.l.s-1

Profiler and actuator

Fixed step grid

Variable step grid

Electronic Rack 3U - 84F

Software visualisation

1 The SEM profilers are provided under a CEA/CNRS licence.

2 The temperature of a single wire is to be kept below 1200°C. Its diameter is customized to your application.

WWW.PANTECHNIK.COM

Page 2: BEAM PROFILE MONITORS1 - Pantechnik...BEAM PROFILE MONITORS1 Secondary Emission Monitor (SEM) for multi-plane ion beam profile measurement When particles of an ion beam hit a wire

ELECTRONIC PRINCIPLE

The electronic rack features two separated functions:

• the data acquisition• the automatic function of HV biasing and actuation

The analogical signals coming from each wire are acquired by integration and digitized by the

front-end cards. They are treated by the FPGA on the mother board and then displayed on the

dynamic X and Y histogram graphs of the software.

Depending of the beam intensity, front-end card may use active or passive components

resulting in an integration time of 200µs to 10s.

Data acquisition and treatment Multi-acquisition racks cabinet

The power supply of the electronic rack is 24V. A 5 outputs 220V AC power supply is

optionally provided.

March 2018

PANTECHNIK

13 rue de la Résistance 14400, Bayeux France T: +33 231 51 27 60 F: +33 231 21 96 33

[email protected] www.pantechnik.com