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HMPS-282x SeriesMiniPak Surfae Mount RF Shottky Barrier Diodes

Data Sheet

Description/Applications

These ultra-miniature products represent the blending o

Avago Technologies proven semiconductor and the latest

in leadless packaging. This series o Schottky diodes is

the most consistent and best all-round device available,

and nds applications in mixing, detecting, switching,

sampling, clamping and wave shaping at requencies up

to 6 GHz. The MiniPak package oers reduced parasit-

ics when compared to conventional leaded diodes, and

lower thermal resistance.

The HMPS-282x amily o diodes oers the best all-around

choice or most applications, eaturing low series resis-

tance, low orward voltage at all current levels and good

RF characteristics.

Note that Avagos manuacturing techniques assure that

dice ound in pairs and quads are taken rom adjacent

sites on the waer, assuring the highest degree o match.

Minipak 1412 is a ceramic based package, while Minipak

QFN is a leadrame based package.

Features

Surace mount MiniPak package

Better thermal conductivity or higher power

dissipation

Single and dual versions

Matched diodes or consistent perormance

Low turn-on voltage (as low as 0.34 V at 1 mA)

Low FIT (Failure in Time) rate*

Six-sigma quality level

For more inormation, see the Surace Mount

Schottky Reliability Data Sheet.

Pin Connections and Package Marking

Notes:

1. Package marking provides orientation and identication.2. See Electrical Specications or appropriate package marking.

3

2

P roduct code D at ecode

4

AA

1

Single

3

2

4

1

#0

Anti-parallel

3

2

4

1

#2

Parallel

3

2

4

1

#5

(MiniPak 1412) (MiniPak 1412) (MiniPak 1412)

Anti-parallel

3

2

4

1

#2

(MiniPak QFN)

Parallel

3

2

4

1

#5

(MiniPak QFN)

Package Lead Code Identifcation (Top View)

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HMPS-282x Series Absolute Maximum Ratings [1], Tc = 5c

Symbol Parameter Units

MiniPak 1412/

MiniPak QFN

I Forward Current (1 s pulse) A 1

PIV Peak Inverse Voltage V 15

Tj Junction Temperature C 150

Tstg Storage Temperature C -65 to +150

jc Thermal Resistance [2] C/W 150

Notes:

1. Operation in excess o any one o these conditions may result in permanent damage to the device.

2. TC = +25C, where TC is dened to be the temperature at the package pins where contact is made to the circuit board.

MiniPak 1412

Electrical Specifcations, Tc = +5c, Single Diode [4]

Part

NumberHMPS-

Package

MarkingCode

LeadCode Confguration

Minimum

Breakdown

VoltageVBR (V)

Maximum

Forward

VoltageVF (mV)

Maximum

Forward

VoltageVF (V) @ IF (mA)

Maximum

Reverse

LeakageIR (nA) @ VR (V)

Maximum

CapacitanceCT (pF)

Typical

Dynamic

ResistanceRD ()[4]

2820 L 0 Single 15 340 0.5 10 100 1 1.0 12

Test Conditions IR = 100

A

IF = 1

mA[1]

VF = 0 V

= 1

MHz[2]

IF = 5 mA

Notes:

1. VF or diodes in pairs is 15 mV maximum at 1 mA.

2. CTO or diodes in pairs is 0.2 pF maximum.

3. Eective carrier lietime () or all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.

4. RD = RS + 5.2 at 25C and I= 5 mA.

ESD WARNING: Handling Precautions Should Be Taken To Avoid Static Discharge.

MiniPak QFN

Electrical Specifcations, Tc = +5c, Single Diode [4]

Part

Number

HMPS-

Package

Marking

Code

Lead

Code Confguration

Minimum

Breakdown

Voltage

VBR (V)

Maximum

Forward

Voltage

VF (mV)

Maximum

Forward

Voltage

VF (V) @ IF (mA)

Maximum

Reverse

Leakage

IR (nA) @ VR (V)

Maximum

Capacitance

CT (pF)

Typical

Dynamic

Resistance

RD ()[4]

2822

2825

3

2

2

5

Anti-parallel

Parallel

15 340 0.5 10 100 1 1.0 12

Test Conditions IR = 100

A

IF = 1

mA[1]

VF = 0 V

= 1

MHz[2]

IF = 5 mA

Notes:

1. VF or diodes in pairs is 15 mV maximum at 1 mA.

2. CTO or diodes in pairs is 0 .2 pF maximum.

3. Eective carrier lietime () or all these diodes is 100 ps maximum measured with Krakauer method at 5 mA.

4. RD = RS + 5.2 at 25C and I= 5 mA.

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Cj

Rj

RS

Rj = 8.33 X 10-5 nT

Ib + Is

where

Ib = externally applied bias current in amps

Is = saturation current (see table of SPICE parameters)

T= temperature, K

n = ideality factor (see table of SPICE parameters)

RS = series resistance (see Table of SPICE parameters)

Cj = junction capacitance (see Table of SPICE parameters)

Linear Equivalent Circuit Model Diode Chip SPICE Parameters

Parameter Units HMPS-282x

BV V 15

CJ0 pF 0.7

EG eV 0.60

IBV A 1E-4

IS A 2.2E-8

N 1.08

RS 8.0

PB V 0.65

PT 2

M 0.5

MiniPak 1412 Linear Circuit Model o the Diodes Package Minipak QFN Linear Circuit Model o the Diodes Package

30fF 30fF

20fF

20fF

1.1 nH

Single diode package (HMPx-x8x0)

2

3

1

4

20fF 16fF

18fF

19fF

2 fF

0.328nH

Anti-Parallel diodepackage (HMPx-x8x2)

2

3

1

40.328nH0.043nH

0.329nH

0.053nH

0.053nH0.329nH0.045nH

Parallel diodepackage (HMPx-x8x5)

2

3

1

4

20fF 16fF

18fF

19fF

2 fF

0.328nH0.328nH0.043nH

0.329nH

0.053nH

0.053nH0.329nH0.045nH

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4

MiniPak 1412 HMPS-282x Series Typical Perormance

Tc = 25C (unless otherwise noted), Single Diode

Figure 1. Forward Current vs. Forward Voltageat Temperatures.

0 0.10 0.20 0.30 0.500.40

IFFORWARDCURRENT(mA)

VF FORWARD VOLTAGE (V)

0.01

10

1

0.1

100TA = +125C

TA = +75C

TA = +25C

TA = 25C

Figure 2. Reverse Current vs. Reverse Voltageat Temperatures.

0 5 15

IRREVERSECURRENT(nA)

VR REVERSE VOLTAGE (V)

101

1000

100

10

100,000

10,000

TA = +125C

TA = +75C

TA = +25C

Figure 3. Total Capacitance vs. Reverse Voltageat 1MHz

0 2 86

CTCAPACIT

ANCE(pF)


40

0.6

0.4

0.2

1

0.8

Figure 4. Dynamic Resistance vs. ForwardCurrent.

0.1 1 100

RD

DYNAMIC

RESISTANCE(

)

IF FORWARD CURRENT (mA)

101

10

1000

100

VF - FORWARD VOLTAGE (V)

Figure 5. Typical VfMatch, Series Pairs and Quadsat Mixer Bias Levels.

30

10

1

0.3

30

10

1

0.3

IF-FORWARDCURRENT(mA)

VF-FORWARDVOLTAGEDIFFERENC

E(mV)

0.2 0.4 0.6 0.8 1.0 1.2 1.4

IF (Left Scale)

VF (Right Scale)


Figure 6. Typical VfMatch, Series Pairs atDetector Bias Levels.

100

10

1

1.0

0.1

IF-FORWARDCURRENT(A)

VF-FORWARDVOLTAGEDIFFERENCE(mV)

0.10 0.15 0.20 0.25

IF (Left Scale)

VF (Right Scale)

Figure 7. Typical Output Voltage vs. InputPower, Small Signal Detector Operating at 850MHz.

-40 -30

18 nHRF in

3.3 nH100 pF

100 K

HSMS-282B Vo

0

VOOUTPUTVOLTAGE(V)

Pin INPUT POWER (dBm)

-10-200.001

0.01

1

0.1-25C+25C+75C

DC bias = 3 A

Figure 8. Typical Output Voltage vs. InputPower, Large Signal Detector Operating at915 MHz.

-20 -10

RF in

100 pF4.7 K

68

HSMS-282B Vo

30

VO

OUTPUTVOLTAGE

(V)

Pin INPUT POWER (dBm)

10 2001E-005

0.0001

0.001

10

0.1

1

0.01

+25C

LOCAL OSCILLATOR POWER (dBm)

Figure 9. Typical Conversion Loss vs. L.O. Drive,2.0 GHz (Ref AN997).

CONVERSION

LOSS

(dB)

12

10

9

8

7

620 6 8 104

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5

MiniPak QFN HMPS-2825 Series Typical Perormance

Tc = 25C (unless otherwise noted), Single Diode

0.01

0.1

1

10

100

0 0.1 0.2 0.3 0.4 0.5



TA = +125C

TA = +75C

TA = +25C

TA = -25C

1

10

100

1000

10000

100000

0 5 10 15


IR

REVERSE

CUR

RENT

(nA)

TA = +125C

TA = +75C

TA = +25C

0.0

0.2

0.4

0.6

0.8

1.0

0 2 4 6 8

V R - REVERSE VOLTAGE (V)

CT

-CAPACITAN

CE

(pF)

Figure 10. Forward Current vs. Forward Voltage at

Temperatures.Figure 11. Reverse Current vs. Reverse Voltage at

Temperatures.

Figure 12. Total Capacitance vs. Reverse Voltage

at 1MHz

Figure 13. Dynamic Resistance vs. Forward

Current.Figure 14. Typical V Match, Series Pairs and

Quads at Mixer Bias Levels. Figure 15. Typical V Match, Series Pairs atDetector Bias Levels.

Figure 16. Typical Conversion Loss vs. L.O. Drive,

2.0 GHz (Re AN997).


30

10

1

0.3

30

10

1

0.3


VF-FORWARDVOLTAGEDIFFERENCE(m

V)

0.2 0.4 0.6 0.8 1.0 1.2 1.4

IF (Left Scale)

VF (Right Scale)


100

10

1

1.0

0.1

IF-FORWARDCURRENT(A)

VF-FORWARDVOLTAGEDIFFERENCE(mV)

0.10 0.15 0.20 0.25

IF (Left Scale)

VF (Right Scale)

1

10

100

1000

0.1 1.0 10.0 100.0

I F- FORWARD CURRENT (mA)

RD-DYNAMIC

RESISTANCE(ohms)

LOCAL OSCILLATOR POWER (dBm)

CONVERSION

LOSS

(dB)

12

10

9

8

7

620 6 8 104

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Assembly Inormation

The MiniPak diode is mounted to the PCB or microstrip

board using the pad pattern shown in Figure 17.

0.4 0.4

0.3

0.5

0.3

0.5

Figure 17. PCB Pad Layout, MiniPak (dimensions in mm).

This mounting pad pattern is satisactory or most ap-

plications. However, there are applications where a high

degree o isolation is required between one diode and

the other is required. For such applications, the mounting

pad pattern o Figure 18 is recommended.

2.60

0.40

0.20

0.40 mm via hole

(4 places)

0.8 2.40

Figure 18. PCB Pad Layout, High Isolation MiniPak (dimensions in mm).

This pattern uses our via holes, connecting the crossed

ground strip pattern to the ground plane o the board.

SMT Assembly

Reliable assembly o surace mount components is a

complex process that involves many material, process,

and equipment actors, including: method o heating

(e.g., IR or vapor phase reow, wave soldering, etc.) circuit

board material, conductor thickness and pattern, type o

solder alloy, and the thermal conductivity and thermal

mass o components. Components with a low mass, suchas the MiniPak package, will reach solder reow tempera-

tures aster than those with a greater mass.

Ater ramping up rom room temperature, the circuit

board with components attached to it (held in place with

solder paste) passes through one or more preheat zones.

The preheat zones increase the temperature o the board

and components to prevent thermal shock and begin

evaporating solvents rom the solder paste. The reow

zone briey elevates the temperature sufciently to

produce a reow o the solder.

The rates o change o temperature or the ramp-upand cool-down zones are chosen to be low enough

to not cause deormation o the board or damage to

components due to thermal shock. The maximum

temperature in the refow zone (TMAX) should not exceed

255C.

These parameters are typical or a surace mount assembly

process or Avago diodes. As a general guideline, the

circuit board and components should be exposed only

to the minimum temperatures and times necessary to

achieve a uniorm reow o solder.

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MiniPak 1412 Outline Drawing

MiniPak QFN Outline Drawing

1.44(0.057)1.40(0.055)

Topview

Sideview

Dimensionsare in millimeters (inches)

Bottom view

1.20(0.047)1.16(0.046)

0.70(0.028 )0.58(0.023)

1.12 (0.044)1.08 (0.043)

0.82 (0.032)0.78 (0.031)

0.32 (0.013)0.28(0.01 1)

-0.07 (-0.003)-0.03 (-0.001)

0.00

-0.07 (-0.003)-0.03 (-0.001)

0.42(0.017)0.38(0.015)

0.92 (0.036)0.88 (0.035)

1.32 (0.052)1.28 (0.050)

0.00

BottomView

0.50(0.020)

0.60(0.024)

0.40(0.016)0.30(0.012)

0.35(0.014)

1.47(0.058)

1.37(0.054)

1.23(0.048)

1.13(0.044)

TopView

0.60(0.024)

0.50(0.020)

SideView

Dimensionsare inmillimeters(inches)

0.50(0.020)

0.28(0.011)

0.28(0.011)

Ordering Inormation

Part Number No. o Devices Container

HMPS-282x-TR2 10000 13 Reel

HMPS-282x-TR1 3000 7 Reel

HMPS-282x-BLK 100 antistatic bag

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Tape Dimensions and Product Orientation

For Outline 4T (MiniPak 1412 & MiniPak QFN)

P

P0

P2

F

W

C

D 1

D

E

A 0

5 MAX.

t1 (CARRIER TAPE THICKNESS) T t (COVER TAPE THICKNESS)

5 MAX.

B 0

K 0

DESCRIPTION

LENGTH

WIDTH

DEPTH

PITCH

BOTTOM HOLE DIAMETER

A 0B 0K 0P

D 1

1.40 0.05

1.63 0.05

0.80 0.05

4.00 0.10

0.80 0.05

0.055 0.002

0.064 0.002

0.031 0.002

0.157 0.004

0.031 0.002

CAVITY

DIAMETER

PITCH

POSITION

D

P 0E

1.50 0.10

4.00 0.10

1.75 0.10

0.060 0.004

0.157 0.004

0.069 0.004

PERFORATION

WIDTH

THICKNESS

W

t1

8.00 + 0.30 - 0.10

0.254 0.02

0.315 + 0.012 - 0.004

0.010 0.001

CARRIER TAPE

CAVITY TO PERFORATION(WIDTH DIRECTION)

CAVITY TO PERFORATION(LENGTH DIRECTION)

F

P 2

3.50 0.05

2.00 0.05

0.138 0.002

0.079 0.002

DISTANCE

WIDTH

TAPE THICKNESS

C

T t

5.40 0.10

0.062 0.001

0.213 0.004

0.002 0.00004

COVER TAPE

SYMBOL SIZE (mm) SIZE (INCHES)

Device Orientation

USER

FEED

DIRECTION

COVERTAPE

CARRIER

TAPE

REEL

ENDVIEW

8mm

4mm

TOPVIEW

AA

AA

AA

AA

Note: AArepresents packagemarkingcode.Packagemarking is right sideupwith carriertapeperforationsat top.Conformsto ElectronicIndustriesRS-481,Tapingof SurfaceMountedComponents forAutomatedPlacement.Standardquantityis 3,000devicesper reel.

For produt information and a omplete list of distributors, please go to our web site: www.avagotech.com

Avago, Avago Tehnologies, and the A logo are trademarks of Avago Tehnologies in the United States and other ountries.

Data subjet to hange. copyright 005-009 Avago Tehnologies. All rights reserved. Obsoletes 5989-8EN

AV0-051EN - January , 009

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