á÷üâ.+o!qåá § +åð,*Ù hr/' es]䥥¤l~ cØ «aÚ½ò.¢ð · title...
TRANSCRIPT
To learn more about ON Semiconductor, please visit our website at www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to [email protected].
Is Now Part of
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
©2014 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FGH40T65SHDF Rev. C1
FGH40T65SHDF —
650 V, 40 A Field Stop Trench IG
BT
May 2014
FGH40T65SHDF650 V, 40 A Field Stop Trench IGBT
Features
• Maximum Junction Temperature : TJ = 175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.45 V ( Typ.) @ IC = 40 A
• 100% of the Parts tested for ILM(1)
• High Input Impedance
• Fast Switching
• Tighten Parameter Distribution
• RoHS Compliant
General Description
Using novel field stop IGBT technology, Fairchild’s new series of
field stop 3rd generation IGBTs offer superior conduction and
switching performance and easy parallel operation. This device
is well suited for the resonant or soft switching application such
as induction heating and MWO.
Applications
• Induction Heating, MWO
Absolute Maximum Ratings
Notes:1. VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 30 Ω, Inductive Load
2. Repetitive rating: Pulse width limited by max. junction temperature
Symbol Description FGH40T65SHDF_F155 Unit
VCES Collector to Emitter Voltage 650 V
VGES Gate to Emitter Voltage ± 20 V
Transient Gate to Emitter Voltage ± 30 V
ICCollector Current @ TC = 25
oC 80 A
Collector Current @ TC = 100oC 40 A
ILM (1) Pulsed Collector Current @ TC = 25oC 120 A
ICM (2) Pulsed Collector Current 120 A
IFDiode Forward Current @ TC = 25
oC 40 A
Diode Forward Current @ TC = 100oC 20 A
IFM Pulsed Diode Maximum Forward Current 60 A
PDMaximum Power Dissipation @ TC = 25
oC 268 W
Maximum Power Dissipation @ TC = 100oC 134 W
TJ Operating Junction Temperature -55 to +175 oC
Tstg Storage Temperature Range -55 to +175 oC
TLMaximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds300 oC
G
E
CE C
G
COLLECTOR(FLANGE)
FGH40T65SHDF —
650 V, 40 A Field Stop Trench IG
BT
©2014 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FGH40T65SPHDF Rev. C1
Thermal Characteristics
Package Marking and Ordering Information
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol Parameter FGH40T65SHDF_F155 Unit
RθJC (IGBT) Thermal Resistance, Junction to Case, Max. 0.56 oC/W
RθJC (Diode) Thermal Resistance, Junction to Case, Max. 1.75 oC/W
RθJA Thermal Resistance, Junction to Ambient, Max. 40 oC/W
Device Marking Device Package Reel Size Tape Width Qty per Tube
FGH40T65SHDF FGH40T65SHDF_F155 TO-247 G03 - - 30
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 1 mA 650 - - V
∆BVCES ∆TJ
Temperature Coefficient of Breakdown
VoltageVGE = 0 V, IC = 1 mA - 0.6 - V/oC
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 µA
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - ± 400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 40 mA, VCE = VGE 3.5 5.5 7.5 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40 A, VGE = 15 V - 1.45 1.81 V
IC = 40 A, VGE = 15 V,
TC = 175oC
- 1.8 - V
Dynamic Characteristics
Cies Input Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
- 1982 - pF
Coes Output Capacitance - 70 - pF
Cres Reverse Transfer Capacitance - 25 - pF
Switching Characteristics
Td(on) Turn-On Delay Time
VCC = 400 V, IC = 40 A,
RG = 6 Ω, VGE = 15 V,
Inductive Load, TC = 25oC
- 18 - ns
Tr Rise Time - 27 - ns
Td(off) Turn-Off Delay Time - 64 - ns
Tf Fall Time - 3 - ns
Eon Turn-On Switching Loss - 1.22 - mJ
Eoff Turn-Off Switching Loss - 0.44 - mJ
Ets Total Switching Loss - 1.66 - mJ
Td(on) Turn-On Delay Time
VCC = 400 V, IC = 40 A,
RG = 6 Ω, VGE = 15 V,
Inductive Load, TC = 175oC
- 18 - ns
Tr Rise Time - 31 - ns
Td(off) Turn-Off Delay Time - 70 - ns
Tf Fall Time - 56 - ns
Eon Turn-On Switching Loss - 1.78 - mJ
Eoff Turn-Off Switching Loss - 0.78 - mJ
Ets Total Switching Loss - 2.56 - mJ
FGH40T65SHDF —
650 V, 40 A Field Stop Trench IG
BT
©2014 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
FGH40T65SHDF Rev. C1
Electrical Characteristics of the IGBT (Continued)
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Qg Total Gate Charge
VCE = 400 V, IC = 40 A,
VGE = 15 V
- 68 - nC
Qge Gate to Emitter Charge - 12 - nC
Qgc Gate to Collector Charge - 25 - nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VFM Diode Forward Voltage IF = 20 ATC = 25
oC - 1.5 1.95V
TC = 175oC - 1.37 -
Erec Reverse Recovery Energy
IF = 20 A, dIF/dt = 200 A/µs
TC = 175oC - 153 - µJ
Trr Diode Reverse Recovery TimeTC = 25
oC - 101 -ns
TC = 175oC - 238 -
Qrr Diode Reverse Recovery ChargeTC = 25
oC - 343 -nC
TC = 175oC - 1493 -
FGH40T65SHDF —
650 V, 40 A Field Stop Trench IG
BT
©2014 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com
FGH40T65SPHDF Rev. C1
Typical Performance Characteristics
Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics
Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case Characteristics Temperature at Variant Current Level
Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
0 1 2 3 4 5 60
30
60
90
12020 VTC = 175
oC
15 V
12 V
10 V
VGE = 8 V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]0 1 2 3 4 5 6
0
20
40
60
80
100
12020 V
TC = 25oC
15 V
12 V
10 V
VGE = 8 V
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
-100 -50 0 50 100 150 2001
2
3
80 A
40 A
IC = 20 A
Common Emitter
VGE = 15 V
Collector-Emitter Voltage, VCE [V]
Case Temperature, TC [oC]
0 1 2 3 40
30
60
90
120
Common Emitter
VGE = 15 V
TC = 25oC
TC = 175oC
Collector Current, IC [A]
Collector-Emitter Voltage, VCE [V]
4 8 12 16 200
4
8
12
16
20
IC = 20 A
40 A
80 A
Common Emitter
TC = 25
oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
4 8 12 16 200
4
8
12
16
20
80 A
IC = 20 A 40 A
Common Emitter
TC = 175oC
Collector-Emitter Voltage, VCE [V]
Gate-Emitter Voltage, VGE [V]
FGH40T65SHDF —
650 V, 40 A Field Stop Trench IG
BT
©2014 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com
FGH40T65SPHDF Rev. C1
Typical Performance Characteristics
Figure 7. Capacitance Characteristics Figure 8. Gate charge Characteristics
Figure 9. Turn-on Characteristics vs. Figure 10. Turn-off Characteristics vs. Gate Resistance Gate Resistance
Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs. Gate Resistance Collector Current
1 1010
100
1000
10000
Common Emitter
VGE = 0 V, f = 1 MHz
TC = 25oC
Cres
Coes
Cies
Capacitance [pF]
Collector-Emitter Voltage, VCE [V]30 0 20 40 60 80
0
3
6
9
12
15Common Emitter
TC = 25oC
300 V
400 V
VCC = 200 V
Gate-Emitter Voltage, VGE [V]
Gate Charge, Qg [nC]
0 10 20 30 40 505
10
100
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 40 A
TC = 25oC
TC = 175oC
td(on)
tr
Switching Tim
e [ns]
Gate Resistance, RG [ΩΩΩΩ]
0 10 20 30 40 501
10
100
1000
Common Emitter
VCC = 400 V, VGE = 15 V
IC = 40 A
TC = 25oC
TC = 175oC
td(off)
tf
Switching Tim
e [ns]
Gate Resistance, RG [ΩΩΩΩ]
0 10 20 30 40 50100
1000
5000
Common Emitter
VCC = 400 V, V
GE = 15 V
IC = 40 A
TC = 25
oC
TC = 175
oC
Eon
Eoff
Switching Loss [uJ]
Gate Resistance, RG [ΩΩΩΩ]
20 40 60 805
10
100
Common Emitter
VGE = 15 V, RG = 6 Ω Ω Ω Ω
TC = 25
oC
TC = 175
oC
tr
td(on)
Switching Tim
e [ns]
Collector Current, IC [A]
FGH40T65SHDF —
650 V, 40 A Field Stop Trench IG
BT
©2014 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com
FGH40T65SPHDF Rev. C1
Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs. Collector Current Collector Current
Figure 15. Load Current Vs. Frequency Figure 16. SOA Characteristics
Figure 17. Forward Characteristics Figure 18. Reverse Recovery Current
20 40 60 801
10
100
200
Common Emitter
VGE = 15 V, RG = 6 Ω Ω Ω Ω
TC = 25
oC
TC = 175
oC
td(off)
tf
Switching Tim
e [ns]
Collector Current, IC [A]
20 40 60 80100
1000
10000
Common Emitter
VGE = 15 V, R
G = 6 Ω Ω Ω Ω
TC = 25
oC
TC = 175
oC
Eon
Eoff
Switching Loss [uJ]
Collector Current, IC [A]
1 10 100 10000.1
1
10
100
300
1 ms
10 ms
DC
*Notes:
1. TC = 25oC
2. TJ = 175oC
3. Single Pulse
10 µ µ µ µs
100 µµµµs
Collector Current, Ic [A]
Collector-Emitter Voltage, VCE [V]1k 10k 100k 1M0
50
100
150
200
250
TC = 75
oC
TC = 25
oC
TC = 100
oC
Square Wave
TJ <= 175
oC, D = 0.5, V
CE = 400V
VGE = 15/0 V, R
G = 6 Ω Ω Ω Ω
Collector Current, [A]
Switching Frequency, f[Hz]
0 1 2 31
10
80
TJ = 75oC
TJ = 25oC
TC = 25oC
TC = 75oC
TC = 175oC
TJ = 175oC
Forward Voltage, VF [V]
Forw
ard Current, IF [A]
0 10 20 30 40 500
3
6
9
12
15
TC = 25oC
TC = 175oC
di/dt = 100 A/µµµµs
di/dt = 200 A/µµµµs
di/dt = 100 A/µµµµs
di/dt = 200 A/µµµµs
Reverse Recovery Currnet, Irr [A]
Forward Current, IF [A]
FGH40T65SHDF —
650 V, 40 A Field Stop Trench IG
BT
©2014 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com
FGH40T65SPHDF Rev. C1
Typical Performance Characteristics
Figure 19. Reverse Recovery Time Figure 20. Stored Charge
Figure 21. Transient Thermal Impedance of IGBT
Figure 22. Transient Thermal Impedance of Diode
0 10 20 30 400
100
200
300
400
500
TC = 25oC
TC = 175oC ---
di/dt = 200 A/µµµµs di/dt = 100 A/µµµµs
Reverse Recovery Tim
e, t rr [ns]
Forward Current, IF [A]
0 10 20 30 400
500
1000
1500
2000
TC = 25oC
TC = 175oC
di/dt = 200 A/µµµµsdi/dt = 100 A/µµµµs
Stored Recovery Charge, Q
rr [nC]
Forward Current, IF [A]
10-5
10-4
10-3
10-2
10-1
100
1E-3
0.01
0.1
1
0.01
0.02
0.1
0.05
0.2
single pulse
Therm
al Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t1
PDM
t2
10-5
10-4
10-3
10-2
10-1
100
1E-3
0.01
0.1
1
5
0.01
0.02
0.1
0.05
0.2
single pulse
Therm
al Response [Zthjc]
Rectangular Pulse Duration [sec]
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.5
t1
PDM
t2
FGH40T65SHDF —
650 V, 40 A Field Stop Trench IG
BT
©2014 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
FGH40T65SPHDF Rev. C1
Mechanical Dimensions
Figure 23. TO-247 3L - TO-247,MOLDED,3 LEADS,JEDEC AB LONG LEADS
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-0A3
FGH40T65SHDF —
650 V, 40 A Field Stop Trench IG
BT
©2014 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com
FGH40T65SHDF Rev. C1
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMERFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVERELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANYPRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTYTHEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THEEXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) areintended for surgical implant into the body or (b) support or sustain life,and (c) whose failure to perform when properly used in accordance withinstructions for use provided in the labeling, can be reasonablyexpected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, orsystem whose failure to perform can be reasonably expected to causethe failure of the life support device or system, or to affect its safety oreffectiveness.
PRODUCT STATUS DEFINITIONSDefinition of Terms
AccuPower™AX-CAP®*BitSiC™Build it Now™CorePLUS™CorePOWER™CROSSVOLT™CTL™Current Transfer Logic™DEUXPEED®
Dual Cool™EcoSPARK®
EfficentMax™ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™FACT®
FAST®
FastvCore™FETBench™FPS™
F-PFS™FRFET®
Global Power ResourceSM
GreenBridge™Green FPS™Green FPS™ e-Series™Gmax™GTO™IntelliMAX™ISOPLANAR™Marking Small Speakers Sound Louderand Better™MegaBuck™MICROCOUPLER™MicroFET™MicroPak™MicroPak2™MillerDrive™MotionMax™mWSaver®
OptoHiT™OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™Programmable Active Droop™QFET®
QS™Quiet Series™RapidConfigure™
Saving our world, 1mW/W/kW at a time™SignalWise™SmartMax™SMART START™Solutions for Your Success™SPM®
STEALTH™SuperFET®
SuperSOT™-3SuperSOT™-6SuperSOT™-8SupreMOS®
SyncFET™Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™TinyLogic®
TINYOPTO™TinyPower™TinyPWM™TinyWire™TranSiC™TriFault Detect™TRUECURRENT®*µSerDes™
UHC®
Ultra FRFET™UniFET™VCX™VisualMax™VoltagePlus™XS™
®
™
Datasheet Identification Product Status Definition
Advance Information Formative / In DesignDatasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary First ProductionDatasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed Full ProductionDatasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Obsolete Not In ProductionDatasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of theirparts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failedapplication, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from theproliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized FairchildDistributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized FairchildDistributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range ofup-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address andwarranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild iscommitted to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
www.onsemi.com1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATIONN. American Technical Support: 800−282−9855 Toll FreeUSA/Canada
Europe, Middle East and Africa Technical Support:Phone: 421 33 790 2910
Japan Customer Focus CenterPhone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:Literature Distribution Center for ON Semiconductor19521 E. 32nd Pkwy, Aurora, Colorado 80011 USAPhone: 303−675−2175 or 800−344−3860 Toll Free USA/CanadaFax: 303−675−2176 or 800−344−3867 Toll Free USA/CanadaEmail: [email protected]
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your localSales Representative
© Semiconductor Components Industries, LLC