assembly site change for tmbs in to-263 wire bond p ackage
TRANSCRIPT
Product Group: Diodes Division / September 20, 2019 / PCN-DD-023-2019 Rev. 0
1/3
Assembly Site Change for TMBS in TO-263 Wire Bond Package
DESCRIPTION OF CHANGE: Vishay Diodes Division is moving the assembly location of TMBS® (Trench MOS Barrier Schottky) rectifiers in wire bond TO-263 package from Vishay Tianjin factory, China to an existing subcontractor in Shandong, China. This existing subcontractor was already introduced before for non-TMBS products in TO-263 package through PCN-DD-001-2018. Qualification test has been confirmed to meet and pass all specifications for commercial grade. The datasheet spec. including package outline dimensions remain unchanged and the finished good appearance and reel packing variance are shown in annex. There will be no change in form, fit or function of final products.
CLASSIFICATION OF CHANGE: Assembly Site
REASON FOR CHANGE: Manufacturing capacity consolidation for future expansion.
EXPECTED INFLUENCE ON QUALITY/RELIABILITY/PERFORMANCE: There will be no effect on quality & reliability performance.
PRODUCT CATEGORY: Rectifiers
PART NUMBERS/SERIES/FAMILIES AFFECTED: Involved part numbers are listed in below table.
MBRB10100CT-E3/4W VB20120C-M3/4W VB30150C-E3/4W VBT1060C-E3/4W VBT3045CBP-E3/4W
MBRB10100CT-E3/8W VB20120C-M3/8W VB30150C-E3/8W VBT1060C-E3/8W VBT3045CBP-E3/8W
MBRB10100CT-M3/4W VB20120S-E3/4W VB30150C-M3/4W VBT1060C-M3/4W VBT3045CBP-M3/4W
MBRB10100CT-M3/8W VB20120S-E3/8W VB30150C-M3/8W VBT1060C-M3/8W VBT3045CBP-M3/8W
MBRB1090CT-E3/4W VB20120SG-E3/4W VB30200C-E3/4W VBT1080C-E3/4W VBT3045C-E3/4W
MBRB1090CT-E3/8W VB20120SG-E3/8W VB30200C-E3/8W VBT1080C-E3/8W VBT3045C-E3/8W
VBT1045C-M3/4W VB20120SG-M3/4W VB30202C-M3/4W VBT1080C-M3/4W VBT3060C-E3/4W
VBT1045C-M3/8W VB20120SG-M3/8W VB30202C-M3/8W VBT1080C-M3/8W VBT3060C-E3/8W
VBT6045CBP-M3/4W VB20150C-E3/4W VB40100C-E3/4W VBT1080S-E3/4W VBT3060G-E3/4W
VBT6045CBP-M3/8W VB20150C-E3/8W VB40100C-E3/8W VBT1080S-E3/8W VBT3060G-E3/8W
MBRB10100-E3/4W VB20150C-M3/4W VB40100C-E3H/I VBT1080S-M3/4W VBT3080C-E3/4W
MBRB10100-E3/8W VB20150C-M3/8W VB40100G-E3/4W VBT1080S-M3/8W VBT3080C-E3/8W
MBRB10100-M3/4W VB20150S-E3/4W VB40100G-E3/8W VBT1545CBP-E3/4W VBT3080C-M3/4W
MBRB10100-M3/8W VB20150S-E3/8W VB40120C-E3/4W VBT1545CBP-E3/8W VBT3080C-M3/8W
MBRB1090-E3/4W VB20150SG-E3/4W VB40120C-E3/8W VBT2045BP-E3/4W VBT3080S-E3/4W
MBRB1090-E3/8W VB20150SG-E3/8W VB40120C-M3/4W VBT2045BP-E3/8W VBT3080S-E3/8W
MBRB1090-M3/4W VB20150S-M3/4W VB40120C-M3/8W VBT2045BP-M3/4W VBT3080S-M3/4W
MBRB1090-M3/8W VB20150S-M3/8W VB40150C-E3/4W VBT2045BP-M3/8W VBT3080S-M3/8W
MBRB20100CT-E3/4W VB20200C-E3/4W VB40150C-E3/8W VBT2045CBP-E3/4W VBT4045BP-E3/4W
MBRB20100CT-E3/8W VB20200C-E3/8W VB40150C-E3H/I VBT2045CBP-E3/8W VBT4045BP-E3/8W
MBRB20100CT-M3/4W VB20200G-E3/4W VB40150C-M3/4W VBT2045CBP-M3/4W VBT4045BP-M3/4W
MBRB20100CT-M3/8W VB20200G-E3/8W VB40150C-M3/8W VBT2045CBP-M3/8W VBT4045BP-M3/8W
MBRB2090CT-E3/4W VB20202C-M3/4W VB60100C-E3/4W VBT2045C-E3/4W VBT4045C-E3/4W
MBRB2090CT-E3/8W VB20202C-M3/8W VB60100C-E3/8W VBT2045C-E3/8W VBT4045C-E3/8W
MBRB2090CT-M3/4W VB20202G-M3/4W VB60120C-E3/4W VBT2060C-E3/4W VBT4045C-M3/4W
MBRB2090CT-M3/8W VB20202G-M3/8W VB60120C-E3/8W VBT2060C-E3/8W VBT4045C-M3/8W
VB10150C-E3/4W VB30100C-E3/4W VB60170G-E3/4W VBT2060C-M3/4W VBT4060C-E3/4W
VB10150C-E3/8W VB30100C-E3/8W VB60170G-E3/8W VBT2060C-M3/8W VBT4060C-E3/8W
VB10150C-M3/4W VB30100S-E3/4W VBT10200C-E3/4W VBT2060G-E3/4W VBT5200-E3/4W
VB10150C-M3/8W VB30100S-E3/8W VBT10200C-E3/8W VBT2060G-E3/8W VBT5200-E3/8W
VB10150S-E3/4W VB30100SG-E3/4W VBT10202C-M3/4W VBT2080C-E3/4W VBT5202-M3/4W
VB10150S-E3/8W VB30100SG-E3/8W VBT10202C-M3/8W VBT2080C-E3/8W VBT5202-M3/8W
VB10150S-M3/4W VB30100SG-M3/4W VBT1045BP-E3/4W VBT2080C-M3/4W VBT6045CBP-E3/4W
VB10150S-M3/8W VB30100SG-M3/8W VBT1045BP-E3/8W VBT2080C-M3/8W VBT6045CBP-E3/8W
VB20100C-E3/4W VB30100S-M3/4W VBT1045BP-M3/4W VBT2080S-E3/4W VBT6045C-E3/4W
VB20100C-E3/8W VB30100S-M3/8W VBT1045BP-M3/8W VBT2080S-E3/8W VBT6045C-E3/8W
VB20100S-E3/4W VB30120C-E3/4W VBT1045CBP-E3/4W VBT2080S-M3/4W VBT760-E3/4W
VB20100S-E3/8W VB30120C-E3/8W VBT1045CBP-E3/8W VBT2080S-M3/8W VBT760-E3/8W
VB20100SG-E3/4W VB30120S-E3/4W VBT1045CBP-M3/4W VBT3045BP-E3/4W
VB20100SG-E3/8W VB30120S-E3/8W VBT1045CBP-M3/8W VBT3045BP-E3/8W
VB20120C-E3/4W VB30120SG-E3/4W VBT1045C-E3/4W VBT3045BP-M3/4W
VB20120C-E3/8W VB30120SG-E3/8W VBT1045C-E3/8W VBT3045BP-M3/8W
Product Group: Diodes Division / September 20, 2019 / PCN-DD-023-2019 Rev. 0
2/3
VISHAY BRAND: Vishay General Semiconductor
TIME SCHEDULE: Start Conversion Date: December 1st, 2019
Last Time Buy Date from original site: December 20, 2019 Last Time Shipment Date from original site: March 20, 2020
SAMPLE AVAILABILITY: Available upon request.
PRODUCT IDENTIFICATION: The manufacturing site code “E” will be added followed by date code (XXXXE/MXXXE) for identification of the new assembly site.
QUALIFICATION DATA: Available upon request.
RESPONSE DATE: This PCN is considered approved, without further notification, unless we receive specific customer concerns before November 20, 2019 or as specified by contract. Also the generic LTB/LTS schedule could be changed upon specific contract.
ISSUED BY: R.S. Chin, Product Marketing Director – Rectifiers (Standard & Schottky)
For further information, please contact your regional Vishay office. Contact Information:
The Americas Europe Asia
Vishay Semiconductors Vishay Semiconductors Vishay Semiconductors
150 Motor Parkway, Suite 101E Theresienstrasse 2 15D, Sun Tong Infoport Plaza
Hauppauge, NY11788 USA D-74072 Heilbronn, Germany 55 Huai Hai West Road, Shanghai, China
Phone :631 300 3816 Phone : +49 7131 67 3364 (or 3365) Phone: +86 138 1787 2112
Fax : 631 300 3843 Fax: +49 7131 67 2938 Fax: +86 21 5258 7979
Product Group: Diodes Division / September 20, 2019 / PCN-DD-023-2019 Rev. 0
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ANNEX
TO-263AB Outline
Current New
Reel Packing
Current New (without inner box) (with inner box)
VISHAY GENERAL SEMICONDUCTOR - QUALITY
Vishay Diodes
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package
DEPARTMENT
VISHAY POWER DIODE DIVION
Qual Pack
VISHAY GENERAL SEMICONDUCTOR - QUALITY
Vishay Diodes
Table of Content
I. Background
II. CDC
III. Product Description
IV. Data Sheet
V. Dimension and Body Marking
VI. PV Summary
VII. Reliability Test Summary
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package
DEPARTMENT
VISHAY POWER DIODE DIVION
VISHAY GENERAL SEMICONDUCTOR - QUALITY
Vishay Diodes
I.Background
Smallest Chip Biggest Chip Highest voltage
VB10150C-M3 VBT6045C-M3 VB30202C-M3
Part Numbers / Series/ Families affected:
Involved product groups are listed in below table.
Part Number Part Number Part Number Part Number Part Number
MBRB10100CT-E3/4W VB20120SG-E3/4W VB30200C-E3/4W VBT1060C-M3/4W VBT3045CBP-M3/4W
MBRB10100CT-E3/8W VB20120SG-E3/8W VB30200C-E3/8W VBT1060C-M3/8W VBT3045CBP-M3/8W
MBRB10100CT-M3/4W VB20120SG-M3/4W VB30202C-M3/4W VBT1080C-E3/4W VBT3045C-E3/4W
MBRB10100CT-M3/8W VB20120SG-M3/8W VB30202C-M3/8W VBT1080C-E3/8W VBT3045C-E3/8W
MBRB10100-E3/4W VB20150C-E3/4W VB40100C-E3/4W VBT1080C-M3/4W VBT3060C-E3/4W
MBRB10100-E3/8W VB20150C-E3/8W VB40100C-E3/8W VBT1080C-M3/8W VBT3060C-E3/8W
MBRB10100-M3/4W VB20150C-M3/4W VB40100C-E3H/I VBT1080S-E3/4W VBT3060G-E3/4W
MBRB10100-M3/8W VB20150C-M3/8W VB40100G-E3/4W VBT1080S-E3/8W VBT3060G-E3/8W
MBRB1090CT-E3/4W VB20150S-E3/4W VB40100G-E3/8W VBT1080S-M3/4W VBT3080C-E3/4W
MBRB1090CT-E3/8W VB20150S-E3/8W VB40120C-E3/4W VBT1080S-M3/8W VBT3080C-E3/8W
MBRB1090-E3/4W VB20150SG-E3/4W VB40120C-E3/8W VBT1545CBP-E3/4W VBT3080C-M3/4W
MBRB1090-E3/8W VB20150SG-E3/8W VB40120C-M3/4W VBT1545CBP-E3/8W VBT3080C-M3/8W
MBRB1090-M3/4W VB20150S-M3/4W VB40120C-M3/8W VBT2045BP-E3/4W VBT3080S-E3/4W
MBRB1090-M3/8W VB20150S-M3/8W VB40150C-E3/4W VBT2045BP-E3/8W VBT3080S-E3/8W
MBRB20100CT-E3/4W VB20200C-E3/4W VB40150C-E3/8W VBT2045BP-M3/4W VBT3080S-M3/4W
MBRB20100CT-E3/8W VB20200C-E3/8W VB40150C-E3H/I VBT2045BP-M3/8W VBT3080S-M3/8W
MBRB20100CT-M3/4W VB20200G-E3/4W VB40150C-M3/4W VBT2045CBP-E3/4W VBT4045BP-E3/4W
MBRB20100CT-M3/8W VB20200G-E3/8W VB40150C-M3/8W VBT2045CBP-E3/8W VBT4045BP-E3/8W
MBRB2090CT-E3/4W VB20202C-M3/4W VB60100C-E3/4W VBT2045CBP-M3/4W VBT4045BP-M3/4W
MBRB2090CT-E3/8W VB20202C-M3/8W VB60100C-E3/8W VBT2045CBP-M3/8W VBT4045BP-M3/8W
MBRB2090CT-M3/4W VB20202G-M3/4W VB60120C-E3/4W VBT2045C-E3/4W VBT4045C-E3/4W
MBRB2090CT-M3/8W VB20202G-M3/8W VB60120C-E3/8W VBT2045C-E3/8W VBT4045C-E3/8W
VB10150C-E3/4W VB30100C-E3/4W VB60170G-E3/4W VBT2060C-E3/4W VBT4045C-M3/4W
VB10150C-E3/8W VB30100C-E3/8W VB60170G-E3/8W VBT2060C-E3/8W VBT4045C-M3/8W
VB10150C-M3/4W VB30100S-E3/4W VBT10200C-E3/4W VBT2060C-M3/4W VBT4060C-E3/4W
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package
Vishay Diodes Division is moving the assembly location of TMBS® (Trench MOS Barrier Schottky) rectifiers in wire
bond TO-263 package from Vishay Tianjin factory, China to an existing subcontractor in Shandong, China. This
existing subcontractor was already introduced before for non-TMBS products in TO-263 package through
PCN-DD-001-2018.
The representative part numbers for this qualification are as following:
DEPARTMENT
VISHAY POWER DIODE DIVION
VISHAY GENERAL SEMICONDUCTOR - QUALITY
Vishay Diodes
VB10150C-M3/8W VB30100S-E3/8W VBT10200C-E3/8W VBT2060C-M3/8W VBT4060C-E3/8W
VB10150S-E3/4W VB30100SG-E3/4W VBT10202C-M3/4W VBT2060G-E3/4W VBT5200-E3/4W
VB10150S-E3/8W VB30100SG-E3/8W VBT10202C-M3/8W VBT2060G-E3/8W VBT5200-E3/8W
VB10150S-M3/4W VB30100SG-M3/4W VBT1045BP-E3/4W VBT2080C-E3/4W VBT5202-M3/4W
VB10150S-M3/8W VB30100SG-M3/8W VBT1045BP-E3/8W VBT2080C-E3/8W VBT5202-M3/8W
VB20100C-E3/4W VB30100S-M3/4W VBT1045BP-M3/4W VBT2080C-M3/4W VBT6045CBP-E3/4W
VB20100C-E3/8W VB30100S-M3/8W VBT1045BP-M3/8W VBT2080C-M3/8W VBT6045CBP-E3/8W
VB20100S-E3/4W VB30120C-E3/4W VBT1045CBP-E3/4W VBT2080S-E3/4W VBT6045CBP-M3/4W
VB20100S-E3/8W VB30120C-E3/8W VBT1045CBP-E3/8W VBT2080S-E3/8W VBT6045CBP-M3/8W
VB20100SG-E3/4W VB30120S-E3/4W VBT1045CBP-M3/4W VBT2080S-M3/4W VBT6045C-E3/4W
VB20100SG-E3/8W VB30120S-E3/8W VBT1045CBP-M3/8W VBT2080S-M3/8W VBT6045C-E3/8W
VB20120C-E3/4W VB30120SG-E3/4W VBT1045C-E3/4W VBT3045BP-E3/4W VBT760-E3/4W
VB20120C-E3/8W VB30120SG-E3/8W VBT1045C-E3/8W VBT3045BP-E3/8W VBT760-E3/8W
VB20120C-M3/4W VB30150C-E3/4W VBT1045C-M3/4W VBT3045BP-M3/4W
VB20120C-M3/8W VB30150C-E3/8W VBT1045C-M3/8W VBT3045BP-M3/8W
VB20120S-E3/4W VB30150C-M3/4W VBT1060C-E3/4W VBT3045CBP-E3/4W
VB20120S-E3/8W VB30150C-M3/8W VBT1060C-E3/8W VBT3045CBP-E3/8W
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package
DEPARTMENT
VISHAY POWER DIODE DIVION
VISHAY GENERAL SEMICONDUCTOR - QUALITY
Vishay Diodes
II. CDC
Supplier: Vishay Diodes
Manufacturer of Lead
Material: China
Generic/Industry
Number: TO-263AB
Lead/Lead Frame Material
(Type): Copper
Mfr's Part Number: VB1015C-M3 Lead Plating: Pure Tin
Die Line or Process: SKY
Wafer Fab. Site: Taiwan Package Material (Type):
Halogen Free
compound
Assembly Location: China Glass Transition Temp (Tg): typ. 135 °C
Die Attach Method: Wire Bonding Typical Thermal Resistance
R-th JC: 4.0 °C/W
Die Passivation: Oxide
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package
DEPARTMENT
VISHAY POWER DIODE DIVION
VISHAY GENERAL SEMICONDUCTOR - QUALITY
Vishay Diodes
Supplier: Vishay Diodes Manufacturer of Lead Material: China
Generic/Industry
Number: TO-263AB
Lead/Lead Frame Material
(Type): Copper
Mfr's Part Number: VB30202C-M3 Lead Plating: Pure Tin
Die Line or Process: SKY
Wafer Fab. Site: Taiwan Package Material (Type):
Halogen Free
Compound
Assembly Location: China Glass Transition Temp (Tg): typ. 135 °C
Die Attach Method: Wire Bonding Typical Thermal Resistance
1.8°C/W (per diode)
Die Passivation: Oxide R-th JC: 1.0°C/W(per device)
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package
DEPARTMENT
VISHAY POWER DIODE DIVION !
VISHAY GENERAL SEMICONDUCTOR - QUALITY
Vishay Diodes
Supplier: Vishay Diodes
Manufacturer of Lead
Material: China
Generic/Industry
Number: TO-263AB
Lead/Lead Frame Material
(Type): Copper
Mfr's Part Number: VBT6045C-M3 Lead Plating: Pure Tin
Die Line or Process: SKY
Wafer Fab. Site: Taiwan Package Material (Type):
Halogen Free
Compound
Assembly Location: China Glass Transition Temp (Tg): typ. 135 °C
Die Attach Method: Wire Bonding Typical Thermal Resistance
R-th JC: 1.5°C/W (per diode)
Die Passivation: Oxide 0.8°C/W(per device)
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package
DEPARTMENT
VISHAY POWER DIODE DIVION
VISHAY GENERAL SEMICONDUCTOR - QUALITY
Vishay Diodes
III.Product Description
Product Description
Product: VB10150C-M3 Package: TO-263AB Issued
by:
Nafion Yang
Technology: Trench MOS Barrier Schottky
Rectifier
Date: 2019/7/23
Function Description: 10A,150V,DUAL TRENCH SKY RECT.
Fab
Taiwan
Assembly Factory
China
Testing Factory
China
Product:
Chip Sub-assembly ( Top view ) :
Finish Goods
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package
DEPARTMENT
VISHAY POWER DIODE DIVION
VISHAY GENERAL SEMICONDUCTOR - QUALITY
Vishay Diodes
Product Description
Product: VB30202C-M3 Package: TO-263AB Issued
by:
Nafion Yang
Technology: Trench MOS Barrier Schottky
Rectifier
Date: 2019/7/23
Function Description: 30A,200V,DUAL TRENCH SKY RECT.
Fab
Taiwan
Assembly Factory
China
Testing Factory
China
Product:
Chip Sub-assembly ( Top view ) :
Finish Goods
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package
DEPARTMENT
VISHAY POWER DIODE DIVION
VISHAY GENERAL SEMICONDUCTOR - QUALITY
Vishay Diodes
Product Description
Product: VBT6045C-M3 Package: TO-263AB Issued
by:
Nafion Yang
Technology: Trench MOS Barrier Schottky
Rectifier
Date: 2019/7/23
Function Description: 60A,45V,DUAL TRENCH SKY RECT.
Fab
Taiwan
Assembly Factory
China
Testing Factory
China
Product:
Chip Sub-assembly ( Top view ) :
Finish Goods
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package
DEPARTMENT
VISHAY POWER DIODE DIVION !
VB10150C-M3www.vishay.com Vishay General Semiconductor
Revision: 19-Jun-2018 1 Document Number: 87991
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High-Voltage Trench MOS Barrier Schottky RectifierUltra Low VF = 0.63 V at IF = 3 A
DESIGN SUPPORT TOOLS
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
• Material categorization:for definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection.
MECHANICAL DATA
Case: D2PAK (TO-263AB)
Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102M3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
Notes(1) Pulse test: 300 μs pulse width, 1 % duty cycle(2) Pulse test: Pulse width 40 ms
PRIMARY CHARACTERISTICS
IF(AV) 2 x 5.0 A
VRRM 150 V
IFSM 60 A
VF at IF = 10 A 0.69 V
TJ max. 150 °C
Package D2PAK (TO-263AB)
Circuit configuration Common cathode
TMBS ®
1
2
K
PIN 1
PIN 2
K
HEATSINK
VB10150C
D2PAK (TO-263AB)
click logo to get started
AvailableModels
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VB10150C UNIT
Maximum repetitive peak reverse voltage VRRM 150 V
Maximum average forward rectified current (fig. 1)per device
IF(AV) 10
A per diode 5.0
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM 60
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MIN. UNIT
Instantaneous forward voltageper diode (1)
IF = 3.0 ATA = 25 °C
VF
0.82 -
VIF = 5.0 A 0.99 1.41
IF = 3.0 ATA = 125 °C
0.63 -
IF = 5.0 A 0.69 0.75
Reverse current per diode (2)
VR = 100 VTA = 25 °C
IR
0.5 - μA
TA = 125 °C 0.5 - mA
VR = 150 VTA = 25 °C - 100 μA
TA = 125 °C 1 10 mA
VB10150C-M3www.vishay.com Vishay General Semiconductor
Revision: 19-Jun-2018 2 Document Number: 87991
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENTARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VB10150C UNIT
Typical thermal resistance per diode RJC 4.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AB VB10150C-M3/4W 1.39 4W 50/tube Tube
TO-263AB VB10150C-M3/8W 1.39 8W 800/reel Tape and reel
Case Temperature (°C)
Ave
rag
e F
orw
ard
Re
ctifie
d C
urr
en
t (A
)
12
10
00 25 50 75 100 125 150 175
Resistive or Inductive Load
Mounted on Specific Heatsink
8
4
2
6
0
1
3
5
0 1 4 6
Average Forward Current (A)
Ave
rag
e P
ow
er
Lo
ss (
W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5D = 0.8
D = 1.0
3
2
4
52
D = tp/T tp
T
Insta
nta
ne
ou
s F
orw
ard
Cu
rre
nt
(A)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.8 1.2 1.6
100
10
1
0.1
TA = 100 °C
TA = 25 °C
0.6 1.0
TA = 150 °C
TA = 125 °C
1.4
10 20 30 40 50 60 70 80 90 100
0.1
0.01
0.001
10
1
Percent of Rated Peak Reverse Voltage (%)
Insta
nta
ne
ou
s R
eve
rse
Cu
rre
nt
(mA
)
TA = 150 °C
TA = 25 °C
TA = 100 °C
TA = 125 °C
0.00001
0.0001
VB10150C-M3www.vishay.com Vishay General Semiconductor
Revision: 19-Jun-2018 3 Document Number: 87991
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Fig. 5 - Typical Junction Capacitance Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Jun
ctio
n C
ap
acita
nce
(p
F)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
100
10
10.01 0.1 1 10 100
t - Pulse Duration (s)
Tra
nsie
nt T
he
rma
l Im
pe
da
nce
(°C
/W) Junction to Case
D2PAK (TO-263AB) Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) min.
0.33 (8.38) min.
0.42 (10.66) min.
1 2
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
V30202C, VF30202C, VB30202C, VI30202Cwww.vishay.com Vishay General Semiconductor
Revision: 14-May-2018 1 Document Number: 87799
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Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology Gen 2
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102M3 suffix meets JESD 201 class 1A whisker testt
Polarity: as marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
IF(AV) 2 x 15 A
VRRM 200 V
IFSM 260 A
VF at IF = 15 A (TA = 125 °C) 0.65 V
TJ max. 175 °C
PackageTO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variations Common cathode
TO-220AB
12
3
1
K
23
TO-263AB
1
2
K
TO-262AA
PIN 1
PIN 2
K
HEATSINK
PIN 1 PIN 2
CASEPIN 3
PIN 1 PIN 2
PIN 3 K
V30202C
VI30202CVB30202C
TMBS ®
VF30202C
ITO-220AB
PIN 2PIN 1
PIN 3
12
3
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V30202C VF30202C VB30202C VI30202C UNIT
Maximum repetitive peak reverse voltage VRRM 200 V
Maximum average forward rectified current (fig. 1)per device
IF(AV)
30A
per diode 15
Maximum DC reverse voltage VDC 160 V
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode
IFSM 260 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Isolation voltage (ITO-220AB only)from terminal to heatsink, t = 1 min
VAC 1500 V
Operating junction and storage temperature range TJ, TSTG -40 to +175 °C
V30202C, VF30202C, VB30202C, VI30202Cwww.vishay.com Vishay General Semiconductor
Revision: 14-May-2018 2 Document Number: 87799
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Notes(1) Pulse test: 300 μs pulse width, 1 % duty cycle(2) Pulse test: Pulse width 5 ms
Notes(1) The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RJA(2) Free air, without heatsink
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode (1)
IF = 5 A
TA = 25 °C
VF
0.69 -
V
IF = 10 A 0.75 -
IF = 15 A 0.80 0.88
IF = 5 A
TA = 125 °C
0.54 -
IF = 10 A 0.61 -
IF = 15 A 0.65 0.72
Reverse current per diode (2)
VR = 160 VTA = 25 °C
IR
0.8 - μA
TA = 125 °C 1.5 - mA
VR = 200 VTA = 25 °C - 250 μA
TA = 125 °C 4.0 14 mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V30202C VF30202C VB30202C VI30202C UNIT
Typical thermal resistance
per diode RJC 1.8 4.0 1.8
°C/Wper device RJC 1.0 2.8 1.0
per device RJA (1)(2) 52 60 52
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V30202C-M3/4W 1.89 4W 50/tube Tube
ITO-220AB VF30202C-M3/4W 1.75 4W 50/tube Tube
TO-263AB VB30202C-M3/4W 1.38 4W 50/tube Tube
TO-263AB VB30202C-M3/8W 1.38 8W 800/reel Tape and reel
TO-262AA VI30202C-M3/4W 1.46 4W 50/tube Tube
V30202C, VF30202C, VB30202C, VI30202Cwww.vishay.com Vishay General Semiconductor
Revision: 14-May-2018 3 Document Number: 87799
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RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Device
0
4
8
12
16
20
24
28
32
0 25 50 75 100 125 150 175
Avera
ge F
orw
ard
Rectified
Curr
ent
(A)
Case Temperature (°C)
V(B,I)30202C VF30202C
RthJA = RthJC
TA, RthJA
0
1
2
3
4
5
6
7
8
9
10
11
12
13
0 2 4 6 8 10 12 14 16 18
Avera
ge P
ow
er
Loss (W
)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = tp/T
T
tp
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Insta
nta
neo
us F
orw
ard
Curr
ent
(A)
Instantaneous Forward Voltage (V)
TA = 150 °C
TA = 25 °C
TA = 100 °C
TA = 125 °C
TA = 175 °C
0.01
0.1
1
10
100
1000
10 000
100 000
10 20 30 40 50 60 70 80 90 100
Insta
nta
neo
us R
evers
e C
urr
ent
(μA
)
Percent of Rated Peak Reverse Voltage (%)
TA = 100 °C
TA = 150 °C
TA = 125 °C
TA = 25 °C
TA = 175 °C
10
100
1000
10 000
0.1 1 10 100
Junctio
n C
ap
acitance (p
F)
Reverse Voltage (V)
TJ = 25 °Cf = 1.0 MHzVsig = 50 mVp-p
0.1
1
10
0.01 0.1 1 10 100
Tra
nsie
nt
Therm
al Im
ped
ance (°C
/W)
t - Pulse Duration (s)
Junction to Case
V(B,I)30202C VF30202C
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Revision: 14-May-2018 4 Document Number: 87799
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PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.415 (10.54)
0.380 (9.65)
0.635 (16.13)
0.625 (15.87)PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45) 0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.161 (4.08)
0.139 (3.53)
1 32
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
V30202C, VF30202C, VB30202C, VI30202Cwww.vishay.com Vishay General Semiconductor
Revision: 14-May-2018 5 Document Number: 87799
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TO-262AA
0.401 (10.19)
0.381 (9.68)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.35)
1 2 3
0.055 (1.40)
0.047 (1.19)
0.510 (12.95)
0.470 (11.94)
PIN
0.411 (10.45)
0.380 (9.65)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.057 (1.45)
0.045 (1.14)
0.160 (4.06)
0.140 (3.56)
0.950 (24.13)
0.920 (23.37)
D2PAK (TO-263AB) Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) min.
0.33 (8.38) min.
0.42 (10.66) min.
1 2
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
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Revision: 01-Jan-2019 1 Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
VBT6045C-M3www.vishay.com Vishay General Semiconductor
Revision: 14-May-2018 1 Document Number: 87959
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Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.33 V at IF = 10 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-263ABMolding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102M3 suffix meets JESD 201 class 2 whisker test
Polarity: As marked
PRIMARY CHARACTERISTICS
Package TO-263AB
IF(AV) 2 x 30 A
VRRM 45 V
IFSM 320 A
VF at IF = 30 A 0.47 V
TJ max. 150 °C
Diode variations Common cathode
TO-263AB
1
2
K
TMBS ®
PIN 1
PIN 2
K
HEATSINK
VBT6045C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VBT6045C UNIT
Maximum repetitive peak reverse voltage VRRM 45 V
Maximum average forward rectified current(fig. 1)
per deviceIF(AV)
60A
per diode 30
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load
IFSM 320 A
Operating junction and storage temperature range TJ, TSTG -40 to +150 °C
VBT6045C-M3www.vishay.com Vishay General Semiconductor
Revision: 14-May-2018 2 Document Number: 87959
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Notes(1) Pulse test: 300 μs pulse width, 1 % duty cycle(2) Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
IF = 10 A
TA = 25 °C
VF (1)
0.44 -
V
IF = 15 A 0.47 -
IF = 30 A 0.54 0.64
IF = 10 A
TA = 125 °C
0.33 -
IF = 15 A 0.37 -
IF = 30 A 0.47 0.56
Reverse current per diode VR = 45 VTA = 25 °C
IR (2)- 3000 μA
TA = 125 °C 18 50 mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL VBT64045C UNIT
Typical thermal resistanceper diode
RJC
1.5°C/W
per device 0.8
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-263AB VBT6045C-M3/4W 1.38 4W 50/tube Tube
TO-263AB VBT6045C-M3/8W 1.38 8W 800/reel Tape and reel
Case Temperature (°C)
Ave
rag
e F
orw
ard
Re
ctifie
d C
urr
en
t (A
)
70
60
50
40
10
0100 110 120 130 140 150
30
20
0
2
12
14
16
20
0 5 15 30 35
Average Forward Current (A)
Ave
rag
e P
ow
er
Lo
ss (
W)
D = 0.1
D = 0.2
D = 0.3D = 0.5
D = 0.8
D = 1.0
20
D = tp/T tp
T6
8
10
4
2510
18
VBT6045C-M3www.vishay.com Vishay General Semiconductor
Revision: 14-May-2018 3 Document Number: 87959
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Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.7
100
10
1
0.1
TA = 150 °C
TA = 125 °C
TA = 100 °C
TA = 25 °C
0.6
Insta
nta
ne
ou
s F
orw
ard
Cu
rre
nt
(A)
0.1 0.3 0.5
20 40 60 80 100
1
0.1
0.01
0.001
100
10
Percent of Rated Peak Reverse Voltage (%)
Insta
nta
ne
ou
s R
eve
rse
Cu
rre
nt
(mA
) TA = 150 °C
TA = 25 °C
TA = 100 °C
TA = 125 °C
100
10 000
100 000
0.1 1 10 100
Reverse Voltage (V)
Ju
nctio
n C
ap
acita
nce
(p
F)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
10
0.10.01 0.1 1 10 100
t - Pulse Duration (s)
Junction to Case
1
Tra
nsie
nt T
he
rma
l Im
pe
da
nce
(°C
/W)
D2PAK (TO-263AB) Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) min.
0.33 (8.38) min.
0.42 (10.66) min.
1 2
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
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Revision: 08-Feb-17 1 Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Legal Disclaimer Noticewww.vishay.com Vishay
Revision: 08-Feb-17 1 Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
VISHAY GENERAL SEMICONDUCTOR - QUALITY
Vishay Diodes
V. Dimension and Body Marking
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package
DEPARTMENT
VISHAY POWER DIODE DIVION !
Unit: mm
Up limit 10.45 9.14 15.85 4.83 1.40 1.40 0.940 0.53 2.79 5.20 3.56 2.67 0.254
Low limit 9.65 8.13 15.00 4.06 1.14 6.22 1.19 0.686 0.36 2.29 4.95 2.79 2.41 0
10.19 8.70 15.18 4.56 1.26 7.58 1.31 0.81 0.51 2.49 5.07 3.13 2.44 0.024
10.29 8.79 15.24 4.58 1.36 7.88 1.37 0.84 0.52 2.68 5.15 3.18 2.51 0.096
10.24 8.74 15.21 4.57 1.30 7.71 1.34 0.82 0.51 2.61 5.10 3.15 2.49 0.052
0.02 0.02 0.02 0.01 0.02 0.08 0.02 0.01 0.00 0.04 0.02 0.01 0.02 0.019
1 2 3 4 5 6 7 8 9 10 11 12 13 14
10.23 8.75 15.22 4.57 1.32 7.82 1.32 0.82 0.51 2.49 5.09 3.15 2.48 0.096
10.24 8.76 15.22 4.58 1.28 7.64 1.31 0.83 0.52 2.60 5.10 3.15 2.46 0.055
10.24 8.73 15.22 4.57 1.36 7.75 1.32 0.83 0.51 2.64 5.10 3.15 2.48 0.040
10.24 8.76 15.24 4.58 1.29 7.60 1.33 0.84 0.51 2.62 5.09 3.18 2.45 0.035
10.25 8.71 15.19 4.57 1.35 7.87 1.35 0.83 0.51 2.64 5.10 3.13 2.51 0.054
10.23 8.76 15.22 4.57 1.28 7.61 1.33 0.83 0.51 2.59 5.07 3.16 2.44 0.093
10.27 8.72 15.21 4.57 1.30 7.67 1.34 0.82 0.51 2.68 5.11 3.16 2.48 0.067
10.25 8.72 15.22 4.56 1.28 7.65 1.32 0.83 0.51 2.62 5.11 3.17 2.49 0.030
10.29 8.73 15.23 4.57 1.30 7.63 1.37 0.82 0.51 2.59 5.11 3.14 2.48 0.074
10.24 8.76 15.20 4.57 1.26 7.58 1.33 0.81 0.51 2.61 5.12 3.15 2.50 0.041
10.19 8.75 15.18 4.56 1.31 7.75 1.31 0.82 0.51 2.64 5.14 3.16 2.50 0.035
10.22 8.75 15.19 4.56 1.30 7.81 1.34 0.82 0.51 2.63 5.15 3.14 2.51 0.048
10.23 8.74 15.19 4.56 1.31 7.88 1.33 0.83 0.51 2.59 5.08 3.14 2.50 0.033
10.23 8.73 15.20 4.56 1.30 7.66 1.32 0.82 0.51 2.66 5.08 3.18 2.50 0.042
10.24 8.73 15.18 4.58 1.31 7.72 1.31 0.82 0.51 2.60 5.07 3.14 2.49 0.058
10.24 8.75 15.19 4.57 1.29 7.69 1.33 0.83 0.51 2.61 5.09 3.17 2.50 0.043
10.26 8.74 15.21 4.57 1.30 7.76 1.34 0.81 0.52 2.62 5.12 3.14 2.50 0.080
10.23 8.76 15.20 4.57 1.31 7.64 1.33 0.84 0.51 2.63 5.09 3.18 2.49 0.042
10.24 8.73 15.21 4.58 1.30 7.65 1.35 0.83 0.51 2.62 5.10 3.16 2.50 0.043
10.28 8.79 15.22 4.58 1.30 7.81 1.35 0.82 0.51 2.60 5.08 3.14 2.50 0.077
10.23 8.76 15.20 4.56 1.30 7.75 1.36 0.82 0.51 2.65 5.10 3.14 2.50 0.042
10.25 8.74 15.22 4.56 1.29 7.69 1.33 0.83 0.52 2.62 5.10 3.13 2.50 0.042
10.24 8.72 15.21 4.56 1.30 7.71 1.36 0.82 0.51 2.62 5.08 3.14 2.51 0.024
10.25 8.73 15.22 4.56 1.28 7.66 1.34 0.83 0.51 2.59 5.08 3.16 2.51 0.035
10.24 8.72 15.20 4.56 1.30 7.74 1.34 0.82 0.51 2.60 5.11 3.15 2.49 0.045
10.25 8.70 15.21 4.56 1.30 7.67 1.35 0.83 0.52 2.61 5.12 3.17 2.51 0.038
10.23 8.71 15.22 4.56 1.32 7.71 1.35 0.82 0.51 2.56 5.08 3.16 2.50 0.056
10.24 8.74 15.20 4.56 1.29 7.84 1.33 0.82 0.51 2.67 5.09 3.16 2.50 0.074
10.24 8.72 15.21 4.56 1.29 7.66 1.31 0.83 0.51 2.63 5.08 3.14 2.51 0.063
10.24 8.74 15.23 4.57 1.29 7.58 1.37 0.82 0.51 2.58 5.09 3.14 2.49 0.066
20
21
22
29
30
23
24
25
26
27
28
8
NO.
Stdev
Average
TO-263AB
5
6
7
Max
Min
1
2
3
4
9
10
11
12
13
14
15
16
17
18
19
1
23
4
56
7
8
9
10
1112
13
14
VISHAY GENERAL SEMICONDUCTOR - QUALITY
Vishay Diodes
Test Parameters Value
VF (V), <1.41V min 1.10
IF=5.0A max 1.13
Ta= 25°C avg 1.11
sigma 0.012
VF (V), <0.75V min 0.67
IF=5.0A max 0.68
Ta=125°C avg 0.68
sigma 0.002
IR (uA), < 100uA min 0.82
VR=150V max 1.03
Ta=25°C avg 0.94
sigma 0.06
IR (mA), < 10mA min 0.79
VR=150V max 0.95
Ta= 125°C avg 0.88
sigma 0.046
DEPARTMENT
VISHAY POWER DIODE DIVION
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change forTO-263WB TMBS Package
VI.Electrical Parameters Verification
Electrical Verification - VB10150C-M3
VISHAY GENERAL SEMICONDUCTOR - QUALITY
Vishay Diodes
Electrical Verification - VB30202C-M3
Test Parameters Value
VF (V) <0.88V min 0.79
IF=15A max 0.80
Ta=25°C avg 0.79
sigma 0.00
VF (V) <0.72V min 0.65
IF=15A max 0.66
Ta=125°C avg 0.65
sigma 0.00
IR (uA)<250uA min 2.0
VR=200V max 2.9
Ta=25°C avg 2.3
sigma 0.3
IR (mA)<14mA min 2.3
VR=200V max 3.0
Ta=125°C avg 2.6
sigma 0.2
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package
DEPARTMENT
VISHAY POWER DIODE DIVION !
VISHAY GENERAL SEMICONDUCTOR - QUALITY
Vishay Diodes
Electrical Verification - VBT6045C-M3
Test Parameters Value
VF (V)<0.64V min 0.55
IF=30A max 0.56
Ta=25°C avg 0.55
sigma 0.003
VF (V)<0.56V min 0.49
IF=30A max 0.52
Ta=125°C avg 0.50
sigma 0.005
IR (uA)<3000uA min 14.5
VR=45V max 43.2
Ta=25°C avg 31.9
sigma 5.4
IR (mA)<50mA min 12.8
VR=45V max 19.9
Ta=125°C avg 18.2
sigma 1.6
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package
DEPARTMENT
VISHAY POWER DIODE DIVION
Environmental Test Summary
Test Item & Condition Duration VB10150C-M3 VBT6045C-M3 VB30202C-M3
HTRB 168Hrs 0 / 77 0 / 77 0 / 77
@100%VR/Max Tj 500Hrs 0 / 77 0 / 77 0 / 77
2 KV 0 / 10 0 / 10 0 / 10
6 KV 0 / 10 0 / 10 0 / 10
8 KV 0 / 10 0 / 10 0 / 10
500 V 0 / 10 0 / 10 0 / 10
1000 V 0 / 10 0 / 10 0 / 10
Post 0 / 30 0 / 30 0 / 30
Pre-conditioning( Baking-->Moisture-->Solder Reflow ) 0 / 308 0 / 308 0 / 308
168 Cycs 0 / 77 0 / 77 0 / 77
500 Cycs 0 / 77 0 / 77 0 / 77
24 Hrs 0 / 77 0 / 77 0 / 77
48 Hrs 0 / 77 0 / 77 0 / 77
1440 Cycs 0 / 77 0 / 77 0 / 77
4286 Cycs 0 / 77 0 / 77 0 / 77
24Hrs 0 / 77
48Hrs 0 / 77
44Hrs 0 / 77
132Hrs 0 / 77
168Hrs 0 / 77
500Hrs 0 / 77
HAST
ESD(HBM)
@ 100pF / 1500 Ω
ESD(CDM)
Temperature Cycling
@-55°C / +150°C / 30min.
UHAST
@Ta= 130°C , 85%R.H.
IOL
@DTJ=100°C / TON=TOFF=3.5min.
HAST
@ 130°C / 85%R.H. / 80%VR(Max 42V)
@ 110°C / 85%R.H. / 80%VR(Max 42V)
Solder Dip @265°C/10 sec
H3TRB
@ 85°C / 85%R.H. / 80%VR(Max 100V)
Vishay Diodes
QualPack-PCN-DD-023-2019 Rev 0_Assembly Site Change for TO-263WB TMBS Package