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    William Stallings

    Computer Organizationand Architecture8th Edition

    Chapter 5Internal Memory

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    Semiconductor Memory Types

    Memory Type Category Erasure Write Mechanism Volatility

    Random-access

    memory (RAM) Read-write memory Electrically, byte-level Electrically VolatileRead-only

    memory (ROM)Read-only memory

    Not possible

    Masks

    NonvolatileProgrammable

    ROM (PROM)

    ElectricallyErasable PROM

    (EPROM)Read-mostly memory

    UV light, chip-levelElectrically ErasablePROM (EEPROM) Electrically, byte-levelFlash memory Electrically, block-level

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    Semiconductor Memory

    RAMMisnamed as all semiconductor memory is

    random access

    Read/WriteVolatileTemporary storageStatic or dynamic

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    Memory Cell Operation

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    Dynamic RAM

    Bits stored as charge in capacitors Charges leak

    Need refreshing even when powered Simpler construction Smaller per bit Less expensive Need refresh circuits Slower Main memory Essentially analogue

    Level of charge determines value

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    Dynamic RAM Structure

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    DRAM Operation

    Address line active when bit read or writtenTransistor switch closed (current flows)

    WriteVoltage to bit line

    High for 1 low for 0Then signal address line

    Transfers charge to capacitor Read

    Address line selected transistor turns on

    Charge from capacitor fed via bit line to sense amplifier Compares with reference value to determine 0 or 1

    Capacitor charge must be restored

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    Static RAM

    Bits stored as on/off switches No charges to leak No refreshing needed when powered More complex construction Larger per bit More expensive Does not need refresh circuits Faster Cache Digital

    Uses flip-flops

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    Stating RAM Structure

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    Static RAM Operation

    Transistor arrangement gives stable logicstate

    State 1C1 high, C2 lowT1 T4 off, T2 T3 on

    State 0C2 high, C1 lowT2 T3 off, T1 T4 on

    Address line transistors T5 T6 is switch

    Write apply value to B & compliment toB

    Read value is on line B

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    SRAM v DRAM

    Both volatilePower needed to preserve data

    Dynamic cellSimpler to build, smallerMore denseLess expensiveNeeds refreshLarger memory units

    StaticFasterCache

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    Read Only Memory (ROM)

    Permanent storageNonvolatile

    Microprogramming (see later) Library subroutines Systems programs (BIOS) Function tables

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    Types of ROM

    Written during manufactureVery expensive for small runs

    Programmable (once)PROMNeeds special equipment to program

    Read mostlyErasable Programmable (EPROM)

    Erased by UVElectrically Erasable (EEPROM)

    Takes much longer to write than readFlash memory

    Erase whole memory electrically

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    Organisation in detail

    A 16Mbit chip can be organised as 1M of16 bit words

    A bit per chip system has 16 lots of 1Mbitchip with bit 1 of each word in chip 1 andso on

    A 16Mbit chip can be organised as a 2048x 2048 x 4bit array

    Reduces number of address pinsMultiplex row address and column address11 pins to address (211=2048)Adding one more pin doubles range of values so x4

    capacity

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    Refreshing

    Refresh circuit included on chip Disable chip Count through rows Read & Write back Takes time Slows down apparent performance

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    Typical 16 Mb DRAM (4M x 4)

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    Packaging

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    256kByte Module

    Organisation

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    1MByte Module Organisation

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    Interleaved Memory

    Collection of DRAM chips Grouped into memory bank Banks independently service read or write

    requests

    K banks can service k requestssimultaneously

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    Error Correction

    Hard FailurePermanent defect

    Soft ErrorRandom, non-destructiveNo permanent damage to memory

    Detected using Hamming error correctingcode

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    Error Correcting Code Function

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    Advanced DRAM Organization

    Basic DRAM same since first RAM chips Enhanced DRAM

    Contains small SRAM as wellSRAM holds last line read (c.f. Cache!)

    Cache DRAMLarger SRAM componentUse as cache or serial buffer

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    Synchronous DRAM (SDRAM)

    Access is synchronized with an external clock Address is presented to RAM RAM finds data (CPU waits in conventional DRAM) Since SDRAM moves data in time with system

    clock, CPU knows when data will be ready

    CPU does not have to wait, it can do somethingelse Burst mode allows SDRAM to set up stream of

    data and fire it out in block

    DDR-SDRAM sends data twice per clock cycle(leading & trailing edge)

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    SDRAM

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    SDRAM Read Timing

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    RAMBUS

    Adopted by Intel for Pentium & Itanium Main competitor to SDRAM Vertical package all pins on one side Data exchange over 28 wires < cm long Bus addresses up to 320 RDRAM chips at1.6Gbps Asynchronous block protocol

    480ns access time

    Then 1.6 Gbps

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    RAMBUS Diagram

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    DDR SDRAM

    SDRAM can only send data once per clock Double-data-rate SDRAM can send data

    twice per clock cycle

    Rising edge and falling edge

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    DDR SDRAMRead Timing

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    Simplified DRAM Read Timing

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    Cache DRAM

    Mitsubishi Integrates small SRAM cache (16 kb) onto

    generic DRAM chip

    Used as true cache64-bit linesEffective for ordinary random access

    To support serial access of block of dataE.g. refresh bit-mapped screen

    CDRAM can prefetch data from DRAM into SRAMbuffer

    Subsequent accesses solely to SRAM

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    Reading

    The RAM Guide RDRAM