Antennas, Propagation and Transceiver IC Technologies

for Millimeter Wave Radio Systems for 5G Networks.

- the Tokyo Tech Wireless Fiber Project-.

Makoto AndoTokyo Institute of Technology

1

1km

Multi-Band HetNet

7/2/2013

3

• Macro-pico interference management is necessary • Spectrum splitting loss occurs in single-band HetNet（e.g. ABS）

• Multi-band HetNet achieves BW enhancement without interference

Single-Band Multi-band

2GHz bandMacro：

Pico：

3GHz bandMacro：

Pico：

60GHz bandMacro：

Pico：

Center freq: 2GHzBW: ρ×10MHzTx power: 46dBm

Center freq: 2GHzBW: (1-ρ)×10MHzTx power: 24dBm

Center freq: 2GHzBW: 10MHzTx power: 46dBm

Center freq: 3.5GHzBW: 100MHzTx power: 30dBm

Center freq: 2GHzBW: 10MHzTx power: 46dBm

Center freq: 60GHzBW: 2.16GHzTx power: 10dBm

C-RAN with MM-Wave Fronthaul

7/2/2013

4

• Integrate 60G pico BSs as RRHs of C-RAN based cellular network• mm-wave fronthaul based on enhanced CPRI to reduce deployment cost

60G pico BSs are connected to C-RAN as RRHs to integrate into 3GPP standards

Macro BS

Enhanced RRHbased 60G pico BS

Mm-wave fronthaul is introduced to reduce deployment cost

“Tokyo Tech Wireless-Fiber Project”2007.4-2012.3-2016.3

Background of MMBackground of MM--wave Project wave Project

The 5 year (2007The 5 year (2007--2012) project 2012) project ““RF Coexisting RF Coexisting Technology on High Speed Baseband IC for Technology on High Speed Baseband IC for Millimeter Wave Radio SystemsMillimeter Wave Radio Systems”” was supported by was supported by Government (MIC) as well as IndustryGovernment (MIC) as well as Industry’’s s participation. The objective was to develop RF participation. The objective was to develop RF coexisting technology on high speed baseband coexisting technology on high speed baseband CMOS for Millimeter wave radio systems. Outdoor CMOS for Millimeter wave radio systems. Outdoor and indoor beyond and indoor beyond GbpsGbps were designed, the former were designed, the former of which was installed in Tokyo Tech campus.of which was installed in Tokyo Tech campus.

75 mm

32 m

m

Post-wall planar antenna

Connector (for DC and IF)

MMICPackage

(cm)

IF

VDD

VGG

Thickness of the antenna substrate : 1.2 mm

Upper side

Backside

Outdoor

Indoor

10 50 10010 50 100Frequency (GHz)

( Gbps )0.1 1.0 10

( m )

101

102

103

104

エントランス

デジタル家電動 画

WIPAS B-WIPAS

USB2.0無線

デジタル家電

( Gbps )0.1 1.0 10

( m )

101

102

103

104

エントランス

デジタル家電動

B-WIPAS

USB2.0無線

デジタル家電

( m )

101

102

103

104( m

)

101

102

103

104

Backhaul

デジタル家電動

B-WIPASB-WIPAS

USB2.0Radio

Digital ElectricalEquipment

Data Rate

Dist

ance

Digital Electrical Equipment（Movie）

1Gbps

3.5Gbps

Radio Entrance

Mobile Network Backhaul

Fixed Wireless Access

Outdoor

File Transfer（ 0～１0ｍ）

target usage imagetarget usage image

Kiosk download

Indoor

Peer-to-peer

Time required for contents download via wireless systems

2011年1月Measured average speed

WiMAX 12MbpsLTE 4Mbps

A社FTTH 40MbpsB社FTTH 120Mbps

雑誌・漫画

音楽CD

映像DVD

新聞

単行本

MicroUHF

MM-wave

X 60GHzX 40GHz

Contents Size [MB]

Dow

nloa

d Ti

me

[sec

]

1GB: 3sec->1.5sec DVD: 13sec->7sec

“RF Coexisting Technology on Silicon CMOS High Speed Baseband IC for Millimeter Wave Radio Systems” (Tokyo Tech)

Medium Range Outdoor Entrance Radio Systems (JRC)

Short Range Indoor Wireless Access System (Sony)

System Spec. IC System Spec. IC

Phase Noise Compensation by Digital Signal Processing (Tokyo Tech)

Packaging, MMIC,RF Module(AMSYS)

GaNHPA (NEC)

High Gain Arrays (Tokyo Tech.)

Outdoor System Equipment (JRC)

Propagation Test （Willcom，KDDI lab）

Antennas on PCB / Chip (Tokyo Tech)

Indoor System Equipment (Sony)

Indoor Demonstration (Sony)

Phase Noise Compensation by Digital

Signal Processing (Tokyo Tech)

電波透過窓

ミリ波吸収リッド

ﾎﾟｽﾄ壁導波路平面ｱﾝﾃﾅ

MMIC

MMIC 電波透過窓

ミリ波吸収リッド

ﾎﾟｽﾄ壁導波路平面ｱﾝﾃﾅ

MMIC

MMIC

Radome

Slot plateWaveguide

RF/IF/ASIC modules

Packaging, MMIC,RF Module(AMSYS)

CMOS chips development

Step 1

Step 2

FutureStudy

chip size (mm x mm)power consumption (mW)

RF(Tokyo Tech)

BB(Tokyo Tech + Company)

90 nm43 mm2

600 mW

90 nm98 mm2

450 mW

65 nm38 mm2

560 mW

65 nm53 mm2

300 mW

40 nm35 mm2

560 mW

40 nm30 mm2

200 mW

2008

2009~ 2009~

F.Y.200938 GHz600 Mbps1 km

F.Y.201160GHz2.5 Gbps1 m

40 nm(system integrated as including CPU, MAC, interface)30 mm2, 500mW

2007 Outdoor syst.

Indoor syst.

feasibility studyfor indoor syst.

8 9 101112 1 2 3 4 5 6 7 8 9 10 1112 1 2 3 4 5 6 7 8 9 1011 12 1 2 3 4 5 6 7 8 9 10 1112 1 2 3 4 5 6 7 8 9 1011 12 1富士通株式会社製90nmCMOSプロセステクノロジLSI試作　1ブロック富士通株式会社製90nmCMOSプロセステクノロジLSI試作　1ブロック富士通株式会社製90nmCMOSプロセステクノロジLSI試作　1ブロック富士通（株）製90nmCMOSプロセステクノロジLSI試作　１ブロック65nmCMOSプロセステクノロジを用いたチップ製作１ブロック90nm/65nm ＣＭＯＳプロセステクノロジを用いたチップ作成65nm/90nmＣＭＯＳプロセステクノロジを用いたチップ作成90nmCMOSプロセスＬＳＩ試作

65nmCMOSプロセスＬＳＩ試作（65nm1区画）

65nmCMOSプロセスＬＳI試作

90nmCMOSプロセスＬＳＩ試作（90nm　2区画）

90nm/65nmＣＭＯＳプロセスLSI試作

屋外システム検討用65CMOSプロセスLSI

65nmCMOSチップ試作

65nmCMOSチップ試作

65nmCMOSチップ試作

65nmCMOSチップ試作

65nmCMOSチップ試作RF　性能向上

65nmCMOSチップ試作Multi-Gbps　要素

65nmCMOSチップ試作RF　性能向上２

65nmCMOSチップ試作Multi-Gbps　要素　改良

23年度19年度 20年度 21年度 22年度

History of CMOS Fabrication

ShortShort--range system spec. range system spec. exampleexample

Item Specification Unit Note

Ch./Transmit mode IEEE802.15.3c base Symbol rate：1.728Gsps

Transfer distance ≦1 m Max. distance ≦ 3m

Modulationπ/2 – QPSKSingle carrier

Transmission rate： 3.456Gbps

Error correction LDPC(1440, 1344) Information rate： 3.225Gbps

Tx. Output power 3 mW (4.8dBm), @3dB back-off

Tx /Rx Antenna gain >6 dBi Each (for bi-directional transmission)

Rx NF <10 dB

Rx input level -60 ～ -25 dBm 5cm～3m transmit distance range

Phase noise < -85 dBc/Hz @1MHz offset

ADC effective bit >5 bit

power consumption <500 mW Module power total (RF+BB）

Chip size <3 x3 mm2 RF/BB each chip

Required C/N 8.5 dB @BER=1e-6, LDPC(1440, 1344)

Global COE International SymposiumGlobal COE International Symposium

The International Workshop of The International Workshop of Millimeter Wave Wireless Millimeter Wave Wireless

Technology and Applications Technology and Applications

December 6, 2010, Tokyo Institute of Technology, JapanIn corporation with Ministry of Internal Affairs and Communications

Session 1: Key Note Speech Chair: Prof. K. AraSession 1: Key Note Speech Chair: Prof. K. Arakiki•• ((9:009:00--9:20)9:20) Prof. Makoto Ando (Tokyo Tech., Japan)Prof. Makoto Ando (Tokyo Tech., Japan)•• (9:20(9:20--9:40)9:40) Prof. Akira Matsuzawa (Tokyo Tech., Japan)Prof. Akira Matsuzawa (Tokyo Tech., Japan)•• (9:40(9:40--10:15) 10:15) Prof. Asad Abidi (UCLA, USA)Prof. Asad Abidi (UCLA, USA)

Session 2: Research & Development in the World Chair: Prof. K. Session 2: Research & Development in the World Chair: Prof. K. OkadaOkada•• (10:35(10:35--11:10)11:10) Prof. Roberto Prof. Roberto SorrentinoSorrentino (Univ., Perugia, Italy)(Univ., Perugia, Italy)•• (11:10(11:10--11:45)11:45) Prof. Shuzo Kato (Tohoku Univ., Japan)Prof. Shuzo Kato (Tohoku Univ., Japan)•• (11:45(11:45--12:20)12:20) Prof. Wei Hong (Southeast Univ., China)Prof. Wei Hong (Southeast Univ., China)

•• (12:20(12:20--13:40)13:40) Poster SessionPoster Session (Royal Blue Hall) (Royal Blue Hall) and and Technical Demo (Corridor) Technical Demo (Corridor)

Session 3: MillimeterSession 3: Millimeter--wave Comm. Systems Chair: Mr. Taniguchiwave Comm. Systems Chair: Mr. Taniguchi•• (13:40(13:40--14:15)14:15) Ph.D Yorgos Palaskas (Intel, USA)Ph.D Yorgos Palaskas (Intel, USA)•• (14:15(14:15--14:50)14:50) Prof. Prof. ShibanShiban K. K. KoulKoul (IIT Delhi, India)(IIT Delhi, India)•• (14:50(14:50--15:15)15:15) Mr. Fumio Ozawa (JRC, Japan)Mr. Fumio Ozawa (JRC, Japan)•• (15:15(15:15--15:40)15:40) Dr. Dr. Makoto Makoto Noda (Sony, Japan)Noda (Sony, Japan)

Session 4: Constituent Technologies Chairs: Prof. J. Session 4: Constituent Technologies Chairs: Prof. J. HirokawaHirokawaProf. K. FukawaProf. K. Fukawa

•• (16:00(16:00--16:35)16:35) Dr. Sohrab Emami (Sibeam, USA)Dr. Sohrab Emami (Sibeam, USA)•• (16:35(16:35--17:10)17:10) Prof. Prof. JriJri Lee (Natl. Taiwan Univ., Taiwan)Lee (Natl. Taiwan Univ., Taiwan)•• (17:10(17:10--17:45)17:45) Dr. Duixian Liu (IBM Watson, USA) Dr. Duixian Liu (IBM Watson, USA) •• (17:45(17:45--18:05)18:05) Prof. Prof. JiroJiro HirokawaHirokawa (Tokyo Tech., Japan)(Tokyo Tech., Japan)•• (18:05(18:05--18:25)18:25) Prof. Kenichi Okada (Tokyo Tech., Japan)Prof. Kenichi Okada (Tokyo Tech., Japan)•• (18:25(18:25--18:45)18:45) Dr. Satoshi Dr. Satoshi SuyamaSuyama (Tokyo Tech., Japan)(Tokyo Tech., Japan)

“Tokyo Tech Wireless-Fiber Project”2007.4-2012.3-2016.3

contents viewer with 60GHz chip

MM-wave Gigabit network image 40GHz & 60GHz

RF-CMOS chip image東工大 松澤・岡田研 提供

Antenna PKG imageアムシス 提供

データ閲覧端末

新聞 音楽 書籍 映像

Home server

ß-ßßCamera

Provider Personal Big data transferPersonal Big data transfer

GATEGATE

GATEGATE

40GHz 40GHz

40GHz40GHz

40GHz

40GHz

40GHz

40GHz Active Mesh40GHz Active Mesh

60GHz GATE60GHz GATE

Contents Deliver Contents Deliver

光幹線網光幹線網

GATEGATE

Transfer to Target ＧATE

Mobile GATEMobile GATE

40GHz

GATEGATE

６０GH帯通信用モジュール

６０GH帯通信用モジュール搭

載型情報端末（次世代iPad?)

６０GH帯通信用モジュール

６０GH帯通信用モジュール搭

載型情報端末（次世代iPad?)

60GHz 60GHz60GHz 60GHz

44GHz Track Approach44GHz Track Approach

60GHz GATE60GHz GATE

MM-wave Gigabit network for mobile CloudMM-wave Gigabit network for mobile Cloud

40GHz P-P40GHz P-P

Down

Up

ß-ßßSmart phone

Outdoor

Indoor

10 50 10010 50 100Frequency (GHz)

( Gbps )0.1 1.0 10

( m )

101

102

103

104

エントランス

デジタル家電動 画

WIPAS B-WIPAS

USB2.0無線

デジタル家電

( Gbps )0.1 1.0 10

( m )

101

102

103

104

エントランス

デジタル家電動

B-WIPAS

USB2.0無線

デジタル家電

( m )

101

102

103

104( m

)

101

102

103

104

Backhaul

デジタル家電動

B-WIPASB-WIPAS

USB2.0Radio

Digital ElectricalEquipment

Data Rate

Dist

ance

Digital Electrical Equipment（Movie）

2Gbps

6Gbps

接続が持続しやすい

60GHz 60GHz60GHz 60GHz

WiLAN（先行接続⇒大容量データ授受準備）

60GHz60GHz

60GHz60GHz

40GHz40GHz

接続が持続しやすい

60GHz 60GHz60GHz 60GHz

WiLAN（先行接続⇒大容量データ授受準備）

60GHz60GHz

60GHz60GHz

40GHz40GHz40GHz40GHz

Gigabit Access Trans. Equip. （GATE）

- 2 0 0 - 1 0 0 0 1 0 0 2 0 0h o r i z o n t a l p o s i t i o n [ m m ]

1 0 0

2 0 0

3 0 0

4 0 0

5 0 0

6 0 0

7 0 0

8 0 0

9 0 0

1 0 0 0

dista

nce

[mm

]

5dBi 5dBi AntennaAntenna

- 2 0 0 - 1 0 0 0 1 0 0 2 0 0h o r i z o n t a l p o s i t i o n [ m m ]

1 0 0

2 0 0

3 0 0

4 0 0

5 0 0

6 0 0

7 0 0

8 0 0

9 0 0

1 0 0 0

dista

nce

[mm

]

5dBi 5dBi AntennaAntenna

-200 -100 0 100 200horizontal position [mm]

100

200

300

400

500

600

700

800

900

1000

distan

ce [m

m]

-6 dB-2 dB2 dB6 dB10 dB14 dB18 dB22 dB26 dB30 dB34 dB38 dB

45dBi 45dBi AntennaAntenna

-200 -100 0 100 200horizontal position [mm]

100

200

300

400

500

600

700

800

900

1000

distan

ce [m

m]

-6 dB-2 dB2 dB6 dB10 dB14 dB18 dB22 dB26 dB30 dB34 dB38 dB

45dBi 45dBi AntennaAntenna

60GHz in

60GHz out

D out

D in

CTLCTL

A out

A in

RX

TX

LO

制御

部

制御

部

DBB

DBB

ABB

ABB

RF FE chip B/B chip

60GHz in

60GHz out

D out

D in

CTLCTL

A out

A in

RX

TX

LO

制御

部

制御

部

DBB

DBB

ABB

ABB

RF FE chip B/B chipベースバンドプロセス変動

環境温度・印加

電圧変化 雑音信号重畳

自律性能補償機能、セルフテスト機能等による無線特性の向上

RF フロントエンド

無線アクセスゲート携帯端末

○ 高度インテリジェンス性を備えた60GHz帯RFフロントエンド／ベーズバンドCMOS集積回路

実装

搭載

60GHz in

60GHz out

D out

D in

CTLCTL

A out

A in

RX

TX

LO

制御

部

制御

部

DBB

DBB

ABB

ABB

RF FE chip B/B chip

60GHz in

60GHz out

D out

D in

CTLCTL

A out

A in

RX

TX

LO

制御

部

制御

部

DBB

DBB

ABB

ABB

RF FE chip B/B chipベースバンドプロセス変動

環境温度・印加

電圧変化 雑音信号重畳

自律性能補償機能、セルフテスト機能等による無線特性の向上

RF フロントエンド

無線アクセスゲート携帯端末

○ 高度インテリジェンス性を備えた60GHz帯RFフロントエンド／ベーズバンドCMOS集積回路

実装

搭載

High efficiency modulation/demodulation 16QAM –CMOS Phase noise, IQ-imb., Propagation

Highly Intelligent CMOS 60GHz RF Frontend and BB Chip

6Gbps, 0.5W, GATE

0102030405060708090

100110120130140150

19:00 19:30 20:00 20:30 21:00

Rain

rate

(mm

/h)

Time

Estimation by Rx Level by 4 paths

Tipping-bucket Rain Gauge at W8

Tipping-bucket Rain Gauge at I6

September 12, 2009

Different Rain Rates for Strong rain

Similar Rain Rates for Weak rain

1無線アクセスゲート

基幹通信網

低速網

高速網

ファイルを断片(チャンク)に分割し, チャンク単位で

ユーザ端末に送信

ダウ

ンロ

ード

要求複数のゲートを通過す

ることで、すべてのチャンクを受信し, ファ

イルを合成可能

どのチャンクをどこのゲートで受信すべきかをネット

ワーク側で制御

Network operation, Gate data handling in the network

Low Jitter PLL

System on Chip for 38G-1Gbps System

Dual 10bit ADC (Improved version)

実績1０bit ADC

Network operation, Proactive routing against Rain 40GHz 64QAM DDD System1Gbps x 2

AD Cov. 12bit 800Msps for DDD System 1.6wà0.15w

Throughput reduction < 10%

1Gbps x2, 260MHz

6Gbps, Network Data < 1.5 times