ansys 17 應用於半導體設備和製程的應用技術

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© 2011 ANSYS, Inc. May 27, 2016 1 ANSYS 17 應用於半導體設備和製程的應用技術 李龍育 Dragon CFD技術經理 虎門科技

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Page 1: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 1

ANSYS 17 應用於半導體設備和製程的應用技術

李龍育 Dragon

CFD技術經理

虎門科技

Page 2: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 2 Taiwan Auto-Design Co.

虎門科技股份有限公司,創立於

1980年,提供客戶全球最優質的

工程分析軟體ANSYS與技術服務

• 結構強度分析

ANSYS Mechanical

• 落摔分析

ANSYS LS-DYNA

• 散熱與熱流場分析

ANSYS FLUENT、 ICEPAK、CFX

• 電磁場分析

ANSYS Emag、 Maxwell

• 多物理耦合分析

Provider of Engineering Solutions and Methodology

• 總公司 : 新北市板橋區

• 台中分 : 台中市文心路

• 台南分

虎門科技 CADMEN

Page 3: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 3

Fluid Dynamics Structural Mechanics

ANSYS Simplorer

ANSYS Engineering Knowledge Manager

ANSYS HPC ANSYS Workbench

Electromagnetics

ANSYS DesignXplorer

Systems and Multiphysics

ANSYS FLUENT

ANSYS CFX

ANSYS Icepak

ANSYS HFSS

ANSYS Maxwell

ANSYS Q3D

ANSYS Mechanical

ANSYS LS-DYNA

ANSYS nCode

ANSYS Acoustics

About ANSYS Advanced Physics Solvers

Page 4: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 4

• 數位實驗

• 設計與偵錯工具

• 深入了解產品問題

• 改良產品性能表現

CFD Simulation Driven Product Development

Page 5: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 5

• 數位實驗

• 設計與偵錯工具

• 深入了解產品問題

• 改良產品性能表現

CFD Simulation Driven Product Development

• 研發成本

• 開發時效

• 性能提升

• 創新研發利器

Flow path lines, concentrations of AsH3, GaAs deposition on a substrate in a MOCVD system.

• Devices are very complex • Complex geometry, complex BCs,

complex physics (turbulence, multi-phase, chemistry, radiation,…), complex systems, …

Page 6: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 6

• ANSYS CFD為功能強大、模組廣泛的旗艦型 CFD 產品

核心技術

• 移動/變形網格

• 多相流

• 化學反應流

• 紊流

• 熱輻射

• 氣動噪音

擴展分析

• 磁流模組 (MHD)

• 燃料電池模組

• 流固耦合 (FSI)

• 最佳化分析

ANSYS CFD模擬軟體介紹

Page 7: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 7

Multiphase Flows - Introduction

The fluid system is defined by a primary and multiple secondary phases.

• One of the phases is considered continuous (primary)

• The others (secondary) are considered to be dispersed within the continuous phase.

• (Note that for free-surface flows, using the Volume of Fluid model (VOF), a distinct interface is defined between the phases and both could be considered continuous)

Underfill

多相流

Pneumatic Transport, Hydrotransport, or Slurry Flow

Fluidized Bed Sedimentation

Stratified / Free- Surface Flow

Slug Flow Bubbly, Droplet, or Particle-Laden Flow

Page 8: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 8

Discrete Phase Model

Physics Model

Multiphase Model • DPM

• VOF

• Mixture

• Euler- Euler

• Euler-Granular

• Dense Discrete Phase

• Discrete Element Method

• Cavitation

Euler-Granular Model

Sand

Euler-Euler Model

Tablet Production

Gas Blowing

Powder

Animation of Gas Volume

Fraction Contours

Gas Sparging

Stirred tank

Mixture

Volume Fraction of Water

Page 9: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 9

化學反應流

支援多樣式的化學反應 • 多相流中異相化學反應

• Slow chemistry與micromixing model

• 新的汙染物 SOx 模型

• 尿素注入選擇性觸媒還原法 (SNCR with urea injection)

• 表面反應

• 與ChemKin結合

射流反應器

SCR 觸媒還原反應

Chemical Vapor Deposition

300mm CVD Chamber, Novellus Systems, Inc.

• パスライン(Color SiH4 concentration) • Deposition speed of Tungsten on the wafer

Species Model

Page 10: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 10

About ANSYS Workbench

CAE Platform

DesignModeler 建構分析模型 SCDM-進階建修模

ANSYS MESH 網格建構

ANSYS FLUENT 設定&計算

CFD POST 後處理可視化

• 分析專案管理 • 重複應用 • 參數分析 • 最佳化使用 • 耦合運算

Page 11: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 11

半導體分析範例介紹

Page 12: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 12

• 探討不同Die之外型所造成的影響

• 改變Coating材料性質

• 不同捲動速度下的模厚變化

• 漏液防止

• 缺陷分析

0.1m/s

0.55m/s

薄膜塗佈

考慮表面張力、接觸角

Page 13: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 13 13

(4) Film Flow in Pad-Wafer Gap

- Velocity variations

- Groove/land flow split

(2) Free-Surface Flow

- Centrifugal force

- Pad capillary action

(3) Free-Surface to Film Transition

- Bow wave reflux

- Excess slurry loss from pad

(5) Free-Surface Reflux Flow

- Redistribution on pad

- Debris conveyance

WPlaten

WWafer

(1) Slurry Strand

- Deflection by pad

- Mixing with resident slurry

How do changes in slurry type, pad

type, downforce, and conditioning

method interact with each other to

effect the removal rate?

Chemical Mechanical Polishing (CMP)

Page 14: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 14

Analysis of Underfill

• Customer want to know how much

volume of dispensing is suitable for next

process

Page 15: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 15

Analysis of No-Flow Underfill

UDF

Results- Volume Fraction

Using VOF model can consider dispensing adhesion effect on the wall.

VOF

Dynamic Mesh

Our Solution

So we can using FLUENT to explore the

dispensing flow behavior during

compression, the same time can also

explore the effect of compression speed

and reflow phenomenon.

Page 16: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 16

CVD應用

Previous research

Chamber thermal analysis

• Temperature distribution

• Heater design

• Purge cooling system

• Structure deformation

Reactive flow analysis

• Flow pattern analysis

• Chemical reaction

• Growth rate

Process design

chamber design

Page 17: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 17

CVD範例-流場優化

Page 18: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 18

CVD範例-反應沉積

材料設定

反應設定

反應機制

操作條件

質量傳輸

晶圓上的速度分佈

GaAs厚度在晶圓上的分佈

表面速度隨晶圓半徑增加而增加 受速度影響 晶圓內部沉積率高外部較低

Page 19: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 19

Types of Species Involved

Surface

Flow

Site

Bulk

Solid

Surface reaction mechanism

• Decomposition reactions of the precursors in the gaseous phase

(氣態體分解反應)

• Adsorption reactions of the reactive products by the surface

(表面反應產物的吸附反應)

• Desorption reactions of the adsorbed species

(吸附物種的脫附反應)

• Deposition of the required material

(沉積所需的材料)

• Heat required for the reactions may be supplied either by heating the reaction chamber wall or the substrate itself

Page 20: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 20

Material & Reaction Set Up

• Gas, site and bulk species to be defined as type fluid

• Switch on wall surface reactions in the species transport panel

• Include required species appropriately

• Define reactions – Volumetric – Wall surface

Gas species

Site species Bulk species

SiHCl3 + H2 → Si + 3HCl

Arrhenius reactions

Page 21: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 21

Surface Reaction Import

KINetics

CHEMKIN for CFD

Stiff Equation Solvers

Gas and Surface Chemistry

Property databases

Multicomponent Transport

Page 22: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 22

Example: Aixtron 200 Horizontal Reactor

Simulation

Experiment

• Growth profile predicted by CFD is in excellent comparison with that of experiment

• Bending of iso-thickness lines is nicely captured

Page 23: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 23

Numerical simulation of the temperature distribution in a planetary

MOCVD reactor

Page 24: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 24

Result and discussion

Temperature distribution

Simulation results of the MOCVD chamber. (a) Temperature contour, (b)streamline.

The highest temperature (greater than 1100ºC) occurred in the heater because the reactor model used the heater as a heat source.

Heat dissipation

The streamline from the injector to the exhaust collector represented a circulation near the skirt.

Heater Susceptor

Lid

Page 25: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 25

Result and discussion

Radiation heat flux

Contours of radiation heat flux (W/m2). (a) Absorbed radiation on the bottom surface of susceptor, (b) radiation heat flux from top surface of susceptor, (c)absorbed radiation on the bottom surface of lid.

• High absorbed radiation heat flux primarily occurred on the heater projection area.

• Low radiation heat flux occurred at the reactor center because of the heater layout.

a b c

bottom surface of lid top surface of susceptor bottom surface of susceptor

Page 26: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 26

Result and discussion

Ceiling design

Ceiling design of the reactor. (a) w/o ceiling design, (b) w/ ceiling design.

(a)Without ceiling design, (b) with ceiling design, (c) with ceiling, setting 85% of the heater watts in the reactor without ceiling.

Page 27: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 27

Result and discussion

Heat shield layout

The modified reactor with a new heater design. (a) Cross-sectional view, (b) temperature contour (◦C).

Page 28: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 28

Result and discussion

Ceiling design & heat shield layout

Page 29: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 29

Other research interests

Structure deformation analysis

cooling water

Page 30: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 30

Other research interests

Structure deformation analysis

cooling water

MAX: 3.98 MM

MAX: 4.09 MM

MAX: 3.79 MM

A

B

E

Page 31: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 31

Other research interests

Temperature distribution on wafer carrier

wafer carrier heater

Sliding/moving mesh

Page 32: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 32

Showerhead Analysis for Species Transport

虎門科技股份有限公司

李龍育

Page 33: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 33

分析一Showerhead Component,其共有三層,由入口的4個inlet開始,第二層為196個通道,第三層為3600個通道,以了解其均勻擴散的結果。

Problem Description

Page 34: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 34

• 總網格數約2620萬

• 使用CutCell 模式建構

網格建構&計算時間

•以四核心運算,計算時間約為7.4 hr

Page 35: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 35

• 操作壓力2000Pa

• Inlet Boundary Condition

Mass Flow Inlet: 0.0002kg/s

Temperature: 300K

Species Mass Fractions: NH3 0.511 SIH4 0.203 N2 0.286

邊界條件

Page 36: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 36

Results: Velocity Streamline

Page 37: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 37

Results: First Layer SIH4 mass fraction & Molar Concentration

First Layer

Page 38: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 38

Results: Second Layer SIH4 mass fraction & Molar Concentration

Second Layer

均勻度提升 !!

Page 39: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 39

Wafer清洗實例分享 Inlet: Water & Velocity 1m/s

outlet: Pressure Out

Wall: 2.5秒後開始旋轉 5000RPM

• 分析一晶圓清洗設備之做動過程,包含在一開始單只有水的進料過程,一直到2.5秒後wafer開始以5000PRM做旋轉,藉以了解流場等資訊。

Page 40: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 40

Results

Water inlet

Page 41: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 41

Results

Start rotating

Page 42: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 42

Results

Velocity Vector

Water Volume Fraction

Stream Line

Page 43: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 43

無塵室微環境氣流場分析

於升降台釋放塵粒的徑線分佈圖

Page 44: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 44

T = 27.0秒 –

塵埃粒子分佈圖

單位 : sm

不同方案比較顆粒殘留

T = 27.0秒 –

塵埃粒子分佈圖

單位 : sm

氣流夾層中裝設檔板

原始設計

Page 45: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 45

RTP 快速熱處理案例介紹

Page 46: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 46

熱輻射模型

CFD 熱輻射模型

• 廣泛的熱輻射模型可針對不同光學深度及熱條件選擇

• P1、Rosseland、DTRM、Discrete Ordinates(方向的離散化)、Surface to Surface

• 太陽輻射模型:使用NREL與ASHRAE資料計算太陽能方向強度

• 提升了S2S模型計算效率

ANSYS CFD技術應用領域

不同波段定義 材料對不同波段的吸收係數

壁面對不同波段的放射率與反射係數

Page 47: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 47

Rapid Thermal Processing (RTP)

Requirements • Fast ramp-up and cool-down

– High throughput

– Minimal dopant diffusion

• Precise trajectory following for process repeatability

• Near uniform temperature across wafer at all times

– Uniform processing

– No damage from thermal stress

Advantages • Shorter cycle times

• Low thermal budget

• Reduced dopant diffusion

• Reduced contamination

• High throughput

• Minimizes time at high wafer temperatures

• Healing implantation damage

• Important components for next generation IC fabs

– RTO

– RTA

– RTCVD

Page 48: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 48

RTP Modeling • RTP equipment has complex configurations

and is inherently a transient process. Fluid flow and heat transfer are 3D in nature, due to strong coupling to radiation.

• High fidelity radiative heat transfer simulations must include

• Diffuse and specular reflections

• Banded model for semitransparent quartz and lamp assembly

• Accurate spectral and temperature dependent properties

• Effect of thin films

• Non-gray radiation

• PTCVD simulations must include, all the above features plus

• Gas phase species

• Complex surface chemistry

Contours of incident radiation and wafer surface temperature in an RTP reactor after 10 seconds of operation

Page 49: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 49

Rapid Thermal Annealing • CFD modeling using Fluent code can guide critical design parameters

of the lamp-house, reaction chamber and shower head

Page 50: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 50

Rapid Thermal Annealing

Page 51: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 51

Rapid Thermal Annealing

Page 52: ANSYS 17 應用於半導體設備和製程的應用技術

© 2011 ANSYS, Inc. May 27, 2016 52

Fluids

Thermal

Emag CAD Import

Structural

Post- process

Meshing Workflow

Design Points

Thank you for your

attention!

EnSight