3D PLUS is a world leading supplier of advanced high density 3D microelectronic products and Die and Wafer Level stacking technology meeting the demand for high reliability, high performance and very small size of today’s and tomorrow’s electronics. We offer standard products and custom System-in-Package (SiP) solutions based on our Space qualified and patented technology portfolio. The company is ISO 9001:2008 certified and its stacking technologies are qualified by European Space Agency for Space applications.

With more than 125,000 modules in orbit today and a failure-free flight heritage of more than 17 years, 3D PLUS is the largest Space Qualified MCM manufacturer in Europe. 3D PLUS products are used by all the major space agencies and customers worldwide. They fly in numerous missions : Envisat, Galileo, AlphaSat, Rosetta, Worldstar 3C, Corot, SaRLupe, Bepi-Colombo, Pleïades, Ariane 5, HII-A/B, ISS, Goce, Kepler, Dawn, RadarSat, New Horizons, W3B, Goes-R, Sentinel, MSL, Juno, Gaia, X-SAT, Grail, SMOS, MMS, Planck, ReStore, Grace, Insight, Iridium Next, Osiris-Rex, Solar Orbiter, RASAT, SAGE III, DubaiSAT-2, Kompsat-5, GSAT, Asnaro-1...

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Recognized for their electrical performance, miniaturization, quality, reliability and radiation assurance level, 3D PLUS Space qualified products bring key advantages to all Space Application fields :

▪ ConsumerApplications: telecommunication, navigation, internet...

▪ SustainableDevelopment : environment and climate monitoring

▪ Defense&Security : earth observation

▪ Spacetransportation : launch and manned space vehicles

▪ Science : astronomy, space exploration and interplanetary missions

▪ HIGH DENSITY

▪ HIGH SPEED PERFORMANCE

▪ SMALL FORM FACTOR 75 % space and weight savings in the design

▪ HIGH RELIABILITY 20 years lifetime

▪ SPACE QUALIFIED TECHNOLOGY

▪ FLIGHT PROVEN PRODUCTS

▪ RADIATION HARDENED (TID, SEE)

▪ LONG TERM SUPPLY AND UPGRADES PATHS GUARANTY

KEY BENEF I TS

FL IGHT PROVEN PRODUCTS

SPACE APPL ICAT IONS EXPERT ISE

RELIABLE MINIATURIZ ATION TECHNOLOGIES FOR ELEC TRONICS

www.3d-plus.com

RELIABLE MINIATURIZ ATION TECHNOLOGIES FOR ELEC TRONICS

SPACE PRODUCTSMEMORY

AN INNOVATIVE COMPANY

MRAM DENSITY CONFIGURATION VOLTAGE(V)

ACCESS/CLOCK

RADIATIONTOLERANCEPACKAGE TEMPERATURE SCD#

TID(1)

krad(Si)SEL(1)

MeV/mg/cm²SEU

MeV.mg/cm²SEUXsection(2)

cm²/bit

3DMR1M08VS1426 1Mbit 128kbit x 8 3.3 40 ns 50 85 Immune - SOP44 C, I, S 3DPA-47303DMR2M16VS2427 2Mbit 128kbit x 16 3.3 40 ns 50 85 Immune - SOP54 C, I, S 3DPA-46503DMR4M08VS4428 4Mbit 512kbit x 8 3.3 40 ns 50 85 Immune - SOP44 C, I, S 3DPA-45203DMR8M32VS8420 8Mbit 256kbit x 32 3.3 40 ns 50 85 Immune - SOP68 C, I, S 3DPA-4100

3DMR10M40VS5688 10Mbit 256kbit x 40 3.3 40 ns 50 85 Immune - SOP 96 C, I, S 3DPA-64603DMR64M08VS4476 64Mbit 8Mbit x 8 3.3 40 ns 50 85(6) Immune - SOP54 C, I, S 3DPA-6170

FLASHNOR DENSITY CONFIGURATION VOLTAGE(V)

ACCESS/CLOCK

RADIATIONTOLERANCEPACKAGE TEMPERATURE SCD#

TID(1)

krad(Si)SEL(1)

MeV/mg/cm²SEU

MeV.mg/cm²SEUXsection(2)

cm²/bit

3DFO64M16VS1281 64Mbit 4Mbit x 16 3.0 90 ns 20(3) 51,2 10 1E -11 SOP54 C, I, M 3DPA-27103DFO128M16VS2282 128Mbit 8Mbit x 16 3.0 90 ns 20(3) 51,2 10 1E -11 SOP54 C, I, M 3DPA-27603DFO256M16VS4105 256Mbit 16Mbit x 16 3.0 90 ns 20(3) 51,2 10 1E -11 SOP54 C, I, M 3DPA-29203DFO256M16VS4269 256Mbit 16Mbit x 16 3.0 90 ns 20(3) 51,2 10 1E -11 SOP54 C, I, M 3DPA-23303DFO512M16VS8492 512Mbit 32Mbit x 16 3.0 90 ns 20(3) 51,2 10 1E -11 SOP56 C, I, M 3DPA-5050

3DFO2G08VS4215 2Gbit 256Mbit x 8 3.3 90 ns 20(3) >60 1.8 8E -11 SOP60 C, I, M 3DPA-3620

EEPROM DENSITY CONFIGURATION VOLTAGE(V)

ACCESS/CLOCK

RADIATIONTOLERANCE

PACKAGE TEMPERATURE SCD#TID(1)(5)

krad(Si)SEL(1)

MeV/mg/cm²SEU(5)

MeV.mg/cm²SEUXsection(2)(5)

cm²/device

3DEE1M08VS1192 1Mbit 128kbit x 8 3.3 250 ns 80/25 80 25/10 1E-5/5E-4 SOP40 C, I, M 3DPA-19203DEE1M08CS1193 1Mbit 128kbit x 8 5 150 ns 50/20 80 25/10 1E-5/5E-4 SOP40 C, I, M 3DPA-27403DEE2M08VS2154 2Mbit 256kbit x 8 3.3 250 ns 80/25 80 25/10 1E-5/5E-4 SOP40 C, I, M 3DPA-15703DEE2M08CS2097 2Mbit 256kbit x 8 5 150 ns 50/20 80 25/10 1E-5/5E-4 SOP40 C, I, M 3DPA-26903DEE4M08VS4145 4Mbit 512kbit x 8 3.3 250 ns 80/25 80 25/10 1E-5/5E-4 SOP40 C, I, M 3DPA-15603DEE4M08CS4029 4Mbit 512kbit x 8 5 150 ns 50/20 80 25/10 1E-5/5E-4 SOP40 C, I, M 3DPA-17803DEE4M32VS4162 4Mbit 128kbit x 32 3.3 250 ns 80/25 80 25/10 1E-5/5E-4 SOP64 C, I, M 3DPA-15803DEE4M32CS4102 4Mbit 128kbit x 32 5 150 ns 50/20 80 25/10 1E-5/5E-4 SOP64 C, I, M 3DPA-19703DEE5M40VS5257 5Mbit 128kbit x 40 3.3 250 ns 80/25 80 25/10 1E-5/5E-4 SOP64 C, I, M 3DPA-24803DEE5M40CS5175 5Mbit 128kbit x 40 5 150 ns 50/20 80 25/10 1E-5/5E-4 SOP64 C, I, M 3DPA-15503DEE8M08VS8190 8Mbit 1Mbit x 8 3.3 250 ns 80/25 80 25/10 1E-5/5E-4 SOP40 C, I, M 3DPA-16303DEE8M08CS8020 8Mbit 1Mbit x 8 5 150 ns 50/20 80 25/10 1E-5/5E-4 SOP40 C, I, M 3DPA-18503DEE8M32VS8094 8Mbit 256kbit x 32 3.3 250 ns 80/25 80 25/10 1E-5/5E-4 SOP64 C, I, M 3DPA-18203DEE8M32CS8163 8Mbit 256kbit x 32 5 150 ns 50/20 >80 25/10 1E-5/5E-4 SOP64 C, I, M 3DPA-2900

Note1:Minimum values.

Note2:SEU saturated cross section.

Note3:TID value under the condition of 50% duty cycle.

Note4:Immune by Radiation Intelligent TMR design.

Note5: X/Y: «X» stands for Read mode, «Y» stands for Write mode.

Note6: Please refer to Application Note 3300-6674.

TEMPERATURERANGES

QUALITYGRADES

ASSEMBLYRECOMMENDATIONS

ORDERINGINFORMATION

C : Commercial (0°C to 70°C)I : Industrial (-40°C to +85°C)M : Military (-55°C to +125°C)S : Product specific temperature range

Assembly recommendations for the 3D stacked products available at http://www.3d-plus.com/technical-documentation.php

N : Commercial

B : Industrial

S : Space

PartNumber–XX–X00XQuality Grade

Temperature Range

Options

DDRII DENSITY CONFIGURATION VOLTAGE(V)

ACCESS/CLOCK

RADIATIONTOLERANCEPACKAGE TEMPERATURE SCD#TID(1)

krad(Si)SEL(1)

MeV/mg/cm²SEU

MeV.mg/cm²SEUXsection(2)

cm²/bit

3D2D1G08US1285 1Gbit 128Mbit x 8 1.8 200-333MHz 100 68 2.3 5.6E -11 SOP74 C, I, S 3DPA-60503D2D2G16UB2684 2Gbit 128Mbit x 16 1.8 200-333MHz 100 68 2.3 5.6E -11 BGA95 C, I, S 3DPA-62703D2D4G72UB3652 4Gbit 64Mbit x 72 1.8 200-333MHz 100 68 2.3 5.6E -11 BGA191 C, I, S 3DPA-56003D2D4G08US4661 4Gbit 512Mbit x 8 1.8 200-266MHz 100 68 2.3 5.6E -11 SOP74 C, I, S 3DPA-60903D2D6G48UB3687 6Gbit 128Mbit x 48 1.8 200-333MHz 100 68 2.3 5.6E -11 BGA143 C, I, S 3DPA-66303D2D6G48UQ3694 6Gbit 128Mbit x 48 1.8 200-266MHz 100 68 2.3 5.6E -11 QFP144 C, I, S 3DPA-66903D2D8G08US8663 8Gbit 1Gbit x 8 1.8 200-266MHz 100 68 2.3 5.6E -11 SOP88 C, I, S 3DPA-6100

DDRI DENSITY CONFIGURATION VOLTAGE(V)

ACCESS/CLOCK

RADIATIONTOLERANCEPACKAGE TEMPERATURE SCD#TID(1)

krad(Si)SEL(1)

MeV/mg/cm²SEU

MeV.mg/cm²SEUXsection(2)

cm²/bit

3D1D2G16TS2174 2Gbit 128Mbit x 16 2.5 100-200 MHz 50 80 0.7 1E -9 SOP66 C, I, S 3DPA-31203D1D2G32TS2491 2Gbit 164Mbit x 32 2.5 100-200 MHz 50 80 0.7 1E -9 SOP86 C, I, S 3DPA-46903D1D4G72TB2729 4Gbit 64Mbit x 72 2.5 100-200 MHz 50 80 0.7 1E -9 BGA239 C, I, S 3DPA-61503D1D8G16TS8466 8Gbit 512Mbit x 16 2.5 100-200 MHz 50 80 0.7 1E -9 SOP78 C, I, S 3DPA-4330

SDRAM DENSITY CONFIGURATION VOLTAGE(V)

ACCESS/CLOCK

RADIATIONTOLERANCEPACKAGE TEMPERATURE SCD#

TID(1)

krad(Si)SEL(1)

MeV/mg/cm²SEU

MeV.mg/cm²SEUXsection(2)

cm²/bit

3DSD512M16VS1605 512Mbit 32Mbit x 16 3.3 100-133 MHz 50 80 7 2E -10 SOP54 C, I, S 3DPA-47803DSD1G16VS2494 1Gbit 64Mbit x 16 3.3 100-133 MHz 50 80 7 2E -10 SOP58 C, I, S 3DPA-49503DSD1G32VS2490 1Gbit 32Mbit x 32 3.3 100-133 MHz 50 80 7 2E -10 SOP70 C, I, S 3DPA-48403DSD2G08VS4686 2Gbit 256Mbit x 8 3.3 100-133 MHz 50 80 7 2E -10 SOP54 C, I, S 3DPA-64403DSD2G16VS4654 2Gbit 128Mbit x 16 3.3 100-133 MHz 50 80 7 2E -10 SOP54 C, I, S 3DPA-56203DSD2G32VS4484 2Gbit 64Mbit x 32 3.3 100-133 MHz 50 80 7 2E -10 SOP70 C, I, S 3DPA-46603DSD2G64VB4488 2Gbit 32Mbit x 64 3.3 100-133 MHz 50 80 7 2E -10 BGA119 C, I, S 3DPA-50003DSD2G40VS5493 2.56Gbit 64Mbit x 40 3.3 100-133 MHz 50 80 7 2E -10 SOP70 C, I, S 3DPA-47603DSD3G48VQ6486 3Gbit 64Mbit x 48 3.3 100-133 MHz 50 80 7 2E -10 QFP114 C, I, S 3DPA-46703DSD4G08VS8613 4Gbit 512Mbit x 8 3.3 100-133 MHz 50 80 7 2E -10 SOP58 C, I, S 3DPA-50203DSD4G16VS8483 4Gbit 256Mbit x 16 3.3 100-133 MHz 50 80 7 2E -10 SOP62 C, I, S 3DPA-4630

SRAM DENSITY CONFIGURATION VOLTAGE(V)

ACCESS/CLOCK

RADIATIONTOLERANCEPACKAGE TEMPERATURE SCD#TID(1)

krad(Si)SEL(1)

MeV/mg/cm²SEU

MeV.mg/cm²SEUXsection(2)

cm²/bit

3DSR4M08VS1264 4Mbit 512kbit x 8 3.3 12, 15, 20 ns 50 80 2 1E -8 SOP44 C, I, M 3DPA-33503DSR4M08CS1647 4Mbit 512kbit x 8 5 12, 15, 20 ns 100 110 0.7 6E -8 SOP44 C, I, M 3DPA-56103DSR8M16VS2505 8Mbit 512kbit x 16 3.3 12, 15, 20 ns 100 110 0.7 6E -8 SOP54 C, I, M 3DPA-33003DSR8M16CS2510 8Mbit 512kbit x 16 5 12, 15, 20 ns 100 110 0.7 6E -8 SOP54 C, I, M 3DPA-40803DSR8M32VS2503 8Mbit 256kbit x 32 3.3 12, 15, 20 ns 100 110 0.7 6E -8 SOP64 C, I, M 3DPA-3290

3DSR16M08CS4660 16Mbit 2Mbit x 8 5 12, 15, 20 ns 100 110 0.7 6E -8 SOP44 C, I, M 3DPA-72803DSR16M16VS4502 16Mbit 1Mbit x 16 3.3 12, 15, 20 ns 100 110 0.7 6E -8 SOP54 C, I, M 3DPA-32803DSR16M16CS4512 16Mbit 1Mbit x 16 5 12, 15, 20 ns 100 110 0.7 6E -8 SOP54 C, I, M 3DPA-37703DSR16M32VS4500 16Mbit 512kbit x 32 3.3 12, 15, 20 ns 100 110 0.7 6E -8 SOP64 C, I, M 3DPA-32303DSR16M32CS4511 16Mbit 512kbit x 32 5 12, 15, 20 ns 100 110 0.7 6E -8 SOP64 C, I, M 3DPA-37803DSR20M40VS2708 20Mbit 512kbit x 40 3.3 12, 15, 20 ns 100 110 0.7 6E -8 SOP84 C, I, M 3DPA-68603DSR32M32VS8501 32Mbit 1Mbit x 32 3.3 12, 15, 20 ns 100 110 0.7 6E -8 SOP68 C, I, M 3DPA-3270

SPIFLASH DENSITY CONFIGURATION VOLTAGE(V)

ACCESS/CLOCK

RADIATIONTOLERANCEPACKAGE TEMPERATURE SCD#TID(1)

krad(Si)SEL(1)

MeV/mg/cm²SEU

MeV.mg/cm²SEUXsection(2)

cm²/bit

3DFS128M01VS2728 128Mbit TMR SPI 3.3 50 MHz 20 / 40 62.5 Immune(4) - SOP18 C, I, M 3DFP-07283DFS256M04VS1740 256Mbit SPI/QSPI 3.0 50-133 MHz 20(3) 62.5 15 7.5E -11 SOP18 C, I, M 3DPA-75903DFS512M04VS2722 512Mbit SPI/QSPI 3.0 50-133 MHz 20(3) 62.5 15 7.5E -11 SOP18 C, I, M 3DPA-7450

RTIMSFLASH

DENSITY CONFIGURATION VOLTAGE(V)

ACCESS/CLOCK

RADIATIONTOLERANCEPACKAGE TEMPERATURE SCD#

TID(1)

krad(Si)SEL(1)

MeV/mg/cm²SEU

MeV.mg/cm²SEUXsection(2)

cm²/bit

3DSS24G08VS3626 24Gbit 3Gbit x 8 3.3 25 ns 50 67 Immune - SOP38 C, I, S 3DPA-5780

FLASHNAND

DENSITY CONFIGURATION VOLTAGE(V)

ACCESS/CLOCK

RADIATIONTOLERANCEPACKAGE TEMPERATURE SCD#

TID(1)

krad(Si)SEL(1)

MeV/mg/cm²SEU

MeV.mg/cm²SEUXsection(2)

cm²/bit

3DFN8G08VS1706 8Gbit 1Gbit x 8 3.3 25 ns 60 62.5 1.3 2E -10 SOP50 C, I, M 3DPA-67603DFN16G08VS1712 16Gbit 2Gbit x 8 3.3 25 ns 60 62.5 1.3 2E -10 SOP50 C, I, M 3DPA-67503DFN16G08VS2705 16Gbit 2Gbit x 8 3.3 25 ns 60 62.5 1.3 2E -10 SOP50 C, I, M 3DPA-67703DFN32G08VS2711 32Gbit 4Gbit x 8 3.3 25 ns 60 62.5 1.3 2E -10 SOP50 C, I, M 3DPA-67403DFN32G08VS4704 32Gbit 4Gbit x 8 3.3 25 ns 60 62.5 1.3 2E -10 SOP50 C, I, M 3DPA-67803DFN64G08VS4309 64Gbit 8Gbit x 8 3.3 25 ns 60 62.5 1.3 2E -10 SOP50 C, I, M 3DPA-67303DFN64G08VS8695 64Gbit 8Gbit x 8 3.3 25 ns 60 62.5 1.3 2E -10 SOP50 C, I, M 3DPA-67903DFN64G16VS4679 64Gbit 4Gbit x 16 3.3 25 ns 60 62.5 1.3 2E -10 SOP58 C, I, M 3DPA-6980

3DFN128G08VS8308 128Gbit 16Gbit x 8 3.3 25 ns 60 62.5 1.3 2E -10 SOP50 C, I, M 3DPA-67203DFN128G16VS8709 128Gbit 8Gbit x 16 3.3 25 ns 60 62.5 1.3 2E -10 SOP58 C, I, M 3DPA-6990

PROM DENSITY CONFIGURATION VOLTAGE(V)

ACCESS/CLOCK

RADIATIONTOLERANCE

PACKAGE TEMPERATURE SCD#TID(1)

krad(Si)SEL(1)

MeV/mg/cm²SEU

MeV.mg/cm²SEUXsection(2)

cm²/bit

3DPO32M08VS1419 32Mbit 4Mbit x 8 3.3 33 MHz 50 120 Immune - SOP44 C, I, M 3DPA-50803DPO64M08VS2299 64Mbit 8Mbit x 8 3.3 33 MHz 50 120 Immune - SOP44 C, I, M 3DPA-3450

3DPO128M08VS4667 128Mbit 16Mbit x 8 3.3 33 MHz 50 120 Immune - SOP44 C, I, M 3DPA-5960

DDRIII DENSITY CONFIGURATION VOLTAGE(V)

ACCESS/CLOCK

RADIATIONTOLERANCE

PACKAGE TEMPERATURE SCD#TID(1)

krad(Si)SEL(1)

MeV/mg/cm²SEU

MeV.mg/cm²SEUXsection(2)

cm²/bit

3D3D16G16WB4751 16Gbit 1Gbit x 16 1.5 125-600MHz 75 67 0.4 1.05E -11 BGA95 C, I, S 3DFP-07513D3D16G72WB2723 16Gbit 256Mbit x 72 1.5 125-600MHz 75 67 0.4 1.05E -11 BGA199 C, I, S 3DPA-74103D3D24G48WB3732 24Gbit 512Mbit x 48 1.5 125-600MHz 75 67 0.4 1.05E -11 BGA143 C, I, S 3DFP-0732

MEMORYCONTROLLERIPCORE P/N PRODUCTOVERVIEW

RIMC DDRII 3DIPMC0700-1 Configurable VHDL DDR2/3 Radiation Intelligent Memory Controller IP core providing a radiation hardened DDR2/3 memory interface with configurable ECCs (Hamming or Reed Solomon), Data bus width = 8bit to 128bit, Radiation Intelligent SEU mitigation and SEFI protection. RIMC DDRIII 3DIPMC0744-1