an overview of recent developments in nanotechnology

52
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Page 1: An Overview of Recent Developments in Nanotechnology

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Page 2: An Overview of Recent Developments in Nanotechnology

M. MeyyappanDirector, Center for Nanotechnology

NASA Ames Research CenterMoffett Field, CA [email protected]

web: http://www.ipt.arc.nasa.gov

Page 3: An Overview of Recent Developments in Nanotechnology

• Advanced miniaturization, a key thrust area to enable new science and exploration missions

- Ultrasmall sensors, power sources, communication, navigation,and propulsion systems with very low mass, volume and powerconsumption are needed

• Revolutions in electronics and computing will allow reconfigurable, autonomous, “thinking” spacecraft

• Nanotechnology presents a whole new spectrum of opportunities to builddevice components and systems for entirely new space architectures

- Networks of ultrasmall probes on planetary surfaces

- Micro-rovers that drive, hop, fly, and burrow

- Collection of microspacecraft making a variety of measurements

Europa Submarine

Page 4: An Overview of Recent Developments in Nanotechnology

* Carbon Nanotubes• Growth (CVD, PECVD)• Characterization• AFM tips

- Metrology- Imaging of Mars Analog- Imaging Bio samples

• Electrode development• Biosensor (cancer diagnostics)• Chemical sensor• Logic Circuits• Chemical functionalization• Gas Absorption• Device Fabrication

* Molecular Electronics• Synthesis of organic molecules • Characterization• Device fabrication

* Inorganic Nanowires

* Protein Nanotubes• Synthesis• Purification• Application Development

* Genomics• Nanopores in gene sequencing• Genechips development

* Computational Nanotechnology• CNT - Mechanical, thermal properties• CNT - Electronic properties• CNT based devices: physics, design• CNT based composites, BN nanotubes• CNT based sensors• DNA transport• Transport in nanopores• Nanowires: transport, thermoelectric effect• Transport: molecular electronics• Protein nanotube chemistry

* Quantum Computing

* Computational Quantum Electronics• Noneq. Green’s Function based Device Simulator

* Computational Optoelectronics

* Computational Process Modeling

Page 5: An Overview of Recent Developments in Nanotechnology

• Nanoelectronics (CNTs, molecular electronics)• Non-CMOS circuits and architectures, reconfigurable systems• Spintronics, quantum computing, nanomagnetics• Nanophotonics, nano-optics, nanoscale lasers….• Chemical and biological sensors• Novel materials for all applications (CNTs, quantum dots,

inorganic nanowires…• Integration of nano-micro-macro• Bio-nano fusion•••

Page 6: An Overview of Recent Developments in Nanotechnology

• Carbon Nanotubes- CNT - growth and characterization- CNT based nanoelectronics- CNT based microscopy- CNT interconnects- CNT based biosensors- CNT chemical sensors

• Some other Nano examples- Inorganic nanowires- Protein nanotubes- Nano in gene sequencing

Page 7: An Overview of Recent Developments in Nanotechnology

CNT is a tubular form of carbon with diameter as small as 1 nm.Length: few nm to microns.

CNT is configurationally equivalent to a two dimensional graphenesheet rolled into a tube.

CNT exhibits extraordinary mechanicalproperties: Young’s modulus over1 Tera Pascal, as stiff as diamond, and tensilestrength ~ 200 GPa.

CNT can be metallic or semiconducting,depending on chirality.

Page 8: An Overview of Recent Developments in Nanotechnology

• The strongest and most flexible molecularmaterial because of C-C covalent bondingand seamless hexagonal network architecture

• Young’s modulus of over 1 TPa vs 70 GPa for Aluminum, 700 GPA for C-fiber

- strength to weight ratio 500 time > for Al;similar improvements over steel and titanium; one order of magnitude improvement over graphite/epoxy

• Maximum strain ~10% much higher than any material

• Thermal conductivity ~ 3000 W/mK in the axialdirection with small values in the radial direction

Page 9: An Overview of Recent Developments in Nanotechnology

• Electrical conductivity six orders of magnitude higher than copper

• Can be metallic or semiconducting depending on chirality- ‘tunable’ bandgap- electronic properties can be tailored through application of

external magnetic field, application of mechanical deformation…

• Very high current carrying capacity

• Excellent field emitter; high aspect ratioand small tip radius of curvature areideal for field emission

• Can be functionalized

Page 10: An Overview of Recent Developments in Nanotechnology

• CNT quantum wire interconnects

• Diodes and transistors for computing

• Capacitors

• Data Storage

• Field emitters for instrumentation

• Flat panel displays

• THz oscillators

Challenges

• Control of diameter, chirality• Doping, contacts• Novel architectures (not CMOS based!)• Development of inexpensive manufacturing processes

Page 11: An Overview of Recent Developments in Nanotechnology

• High strength composites

• Cables, tethers, beams

• Multifunctional materials

• Functionalize and use as polymer back bone- plastics with enhanced properties like “blow

molded steel”

• Heat exchangers, radiators, thermal barriers, cryotanks

• Radiation shielding

• Filter membranes, supports

• Body armor, space suits

Challenges- Control of properties, characterization- Dispersion of CNT homogeneously in host materials- Large scale production

- Application development

Page 12: An Overview of Recent Developments in Nanotechnology

• CNT based microscopy: AFM, STM…

• Nanotube sensors: force, pressure, chemical…

• Biosensors

• Molecular gears, motors, actuators

• Batteries, Fuel Cells: H2, Li storage

• Nanoscale reactors, ion channels

• Biomedical- in vivo real time crew health monitoring- Lab on a chip - Drug delivery- DNA sequencing- Artificial muscles, bone replacement,

bionic eye, ear...

Challenges

• Controlled growth• Functionalization with

probe molecules, robustness• Integration, signal processing• Fabrication techniques

Page 13: An Overview of Recent Developments in Nanotechnology

• CNT has been grown by laser ablation(pioneering at Rice) and carbon arc process(NEC, Japan) - early 90s.- SWNT, high purity, purification methods

• CVD is ideal for patterned growth (electronics, sensor applications)

- Well known technique from microelectronics

- Hydrocarbon feedstock- Growth needs catalyst

(transition metal)- Multiwall tubes at

500-800° deg. C.- Numerous parameters

influence CNT growth

Page 14: An Overview of Recent Developments in Nanotechnology

- Surface masked by a 400 mesh TEM grid

- Methane, 900° C, 10 nm Al/1.0 nm Fe/0.2 nm Mo

Page 15: An Overview of Recent Developments in Nanotechnology

- Surface masked by a 400 mesh TEM grid; 20 nmAl/ 10 nm Fe; nanotubes grown for 10 minutes

Grown using ethylene at 750o C

Page 16: An Overview of Recent Developments in Nanotechnology

• Inductively coupled plasmas are the simplest type of plasmas; very efficient in sustainingthe plasma; reactor easy to build and simple to operate

• Quartz chamber 10 cm in diameter with a window for sample introduction

• Inductive coil on the upper electrode

• 13.56 MHz independent capacitive power on the bottom electrode

• Heating stage for the bottom electrode

• Operating conditionsCH4/H2 : 5 - 20%Total flow : 100 sccmPressure : 1 - 20 TorrInductive power : 100-200 WBottom electrode power : 0 - 100 W

Page 17: An Overview of Recent Developments in Nanotechnology

*First single nanotube logic device — Inverter demonstration (Appl. Phys. Lett., Nov. 200by Chongwu Zhou (USC) and Jie Han (NASA Ames)

2.5

2.0

1.5

1.0

0.5

0.0

Vout(V)

2.52.01.51.00.50.0

Vin(V)

VDD =2.9 V

Vin

Vout

0V

VDD

p

n

100806040200

IDS

(nA

)

-20 -15 -10 -5 0Vg(V)

VDS=10 mV

12

8

4

0D

S (

nA)

-10 -5 0 5 10Vg (V)

VDS=10 mV

V0 VDDCarbon nanotuben-type p-type

Vout

Vinp-MOSFET

n-MOSFET

Page 18: An Overview of Recent Developments in Nanotechnology
Page 19: An Overview of Recent Developments in Nanotechnology

As device feature size continues to shrink(180 nm 130 nm 100 nm)and chip density continuesto increase, heatdissipation from thechip is becoming ahuge challenge.

Page 20: An Overview of Recent Developments in Nanotechnology

• Must be easier and cheaper to manufacture than CMOS

• Need high current drive; should be able to drive capacitances of interconnectsof any length

• High level of integration (>1010 transistors/circuit)

• High reproducibility (better than ± 5%)

• Reliability (operating time > 10 years)

• Very low cost ( < 1 µcent/transistor)

• Better heat dissipation characteristics and amenable solutions

• Everything about the new technology must be compelling and simultaneouslyfurther CMOS scaling must become difficult and not cost-effective. Until these two happen together, the enormous infrastructure built around silicon will keep the siliconengine humming….

(Beyond the SIA Roadmap for Silicon)

Page 21: An Overview of Recent Developments in Nanotechnology

• Neural tree with 14 symmetric Y-junctions• Branching and switching of signals at each junction similar to what happens in biological

neural network• Neural tree can be trained to perform complex switching and computing functions• Not restricted to only electronic signals; possible to use acoustic, chemical or thermal

signals

Page 22: An Overview of Recent Developments in Nanotechnology

Simulated Mars dust

Atomic Force Microscopy is a powerful technique for imaging, nanomanipulation, asplatform for sensor work, nanolithography...

Conventional silicon or tungsten tips wear out quickly.CNT tip is robust, offers amazing resolution.

2 nm thick Au on Mica

Page 23: An Overview of Recent Developments in Nanotechnology
Page 24: An Overview of Recent Developments in Nanotechnology
Page 25: An Overview of Recent Developments in Nanotechnology

Nguyen et al., App. Phys. Lett., 81, 5, p. 901 (2002).

DUV Photoresist Patterns Generated by Interferometric Lithography

Page 26: An Overview of Recent Developments in Nanotechnology

Red Dune Sand (Mars Analog)

Optical image

AFM image usingcarbon nanotube tip

Page 27: An Overview of Recent Developments in Nanotechnology

DNA PROTEIN

Page 28: An Overview of Recent Developments in Nanotechnology

MWNT Interconnects ?

CNT advantages:(1) Small diameter(2) High aspect ratio(3) Highly conductive along the axis(4) High mechanical strength

Question: How to do this ?

Page 29: An Overview of Recent Developments in Nanotechnology

Bottom-up Approachfor CNT Interconnects

TEOSCVD

CatalystPatterning

SiO2/Si

MetalDeposition

PlasmaCVD CMP

Top Metal LayerDeposition

J. Li, Q. Ye, A. Cassell, H. T. Ng, R. Stevens, J. Han, M.Meyyappan, Appl. Phys. Lett., 82(15), 2491 (2003)

Ti, Mo, Cr, Pt

Ni

At ~ 400 to 800°C

Page 30: An Overview of Recent Developments in Nanotechnology

• Our interest is to develop sensors for astrobiology to study origins of life. CNT, though inert,can be functionalized at the tip with a probe molecule. Current study uses AFM as anexperimental platform.

• High specificity• Direct, fast response• High sensitivity• Single molecule and

cell signal captureand detection

• The technology is also being used in collaboration with NCI to develop sensors for cancer diagnostics

- Identified probe molecule that will serve as signature of leukemia cells, to be attached to CNT

- Current flow due to hybridization will be through CNT electrode toan IC chip.

- Prototype biosensors catheter development

Page 31: An Overview of Recent Developments in Nanotechnology

The Fabrication of CNTNanoelectrode Array

(1) Growth of Vertically AlignedCNT Array

(2) Dielectric Encapsulation

(3) Planarization

(4) Electrical Property CharacterizationBy Current-sensing AFM

(5) ElectrochemicalCharacterization

we

re ce

Pote

ntio

stat

Page 32: An Overview of Recent Developments in Nanotechnology

Fabrication of CNT Nanoelectrodes

45 degree perspective view Top view

Side view after encapsulation Top view after planarization

J. Li et al, Appl.Phys. Lett., 81(5),910 (2002)

Page 33: An Overview of Recent Developments in Nanotechnology

Electrical Properties of CNTs

Voltage Bias (mV)

-5.0 -2.5 0.0 2.5 5.0

Current (nA)

-10

-5

0

5

10

-5V 0 +5V

+1mA

-1mA

0

HPanalyzer

Current Sensing AFM Four-probe stationAnd HP parameter analyzer

Page 34: An Overview of Recent Developments in Nanotechnology

Chemical Functionalization

Highly selective reaction of primary amine with surface –COOH group

i-Pr2NEtCO 2

-CO 2H

DM F

N C N CyCy

N

O

O

HO

H2N FcO

HNFc

O

O N

O

O

FeFc =

Page 35: An Overview of Recent Developments in Nanotechnology

Functionalization of DNA

CO 2H

NC

N

CH3

N

CH3

H

Cl-

O

CH3

HN

H2N ATG CCTTCCy3

ATGCCTTCCy3

CH3

H

Cl-

TACG GAAGG G GG GG GG GCy5

N

O

O

HO

SO 3Na

CH3

C

O

NH

C

N

CH3

N

O

O

O N

O

O

SO 3Na

O

HN ATG CC TTCCy3TACG GAAGG G GGG G GG GCy5

+

EDC

+

Sulfo-NHS

DNA probe

Target DNA

Cy3 image

Cy5 image

Page 36: An Overview of Recent Developments in Nanotechnology

3+

2+

e

3+

2+

CNT DNA SensorUsing Electrochemical

Detection

MWNT array electrode functionalized with DNA/PNA probe as an ultrasensitive sensor for detecting the

hybridization of target DNA/RNA from the sample.• Signal from redox bases in the excess DNA single strands

The signal can be amplified with metal ion mediator oxidation catalyzed by Guanine.Ru bPy( )[ ]+

3

2

Page 37: An Overview of Recent Developments in Nanotechnology

Electrochemical Detectionof DNA Hybridization

1st, 2nd, and 3rd cycle in cyclic voltammetry 1st – 2nd scan: mainly DNA signal2nd – 3rd scan: Background

Page 38: An Overview of Recent Developments in Nanotechnology

Single-Walled Carbon NanotubesFor Chemical Sensors

Single Wall Carbon Nanotube

• Every atom in a single-walled nanotube (SWNT) is onthe surface and exposed to environment

• Charge transfer or small changes in the charge-environment of a nanotube can cause drastic changesto its electrical properties

Page 39: An Overview of Recent Developments in Nanotechnology

SWNT Sensor Assembly

• Purified SWNTs in DMF solution• Cast the SWNT/DMF onto IDE

a b

Page 40: An Overview of Recent Developments in Nanotechnology

SWNT Sensor Response to NO2

with UV Light Aiding Recovery

Detection limit to NO2 is 44 ppb.

Page 41: An Overview of Recent Developments in Nanotechnology

Motivations for selecting Single Crystalline Nanowires &Nanowalls (in Nano-scale Electronics)

High single crystallinity ⇒ Low defect density, grain boundary free

ϖ Well-defined surface structural

properties ⇒ Enhanced interfacial engineering

Predictable electron transport

properties ⇒ Predictable device performance

Unique physical properties due to

quantum confinement effects ⇒ Enhancement in device characteristics

Tunable electronic properties

by doping ⇒ Enhancement in device characteristics

Truly bottom-up integration approach ⇒ Innovative fabrication schemes

Potential to revolutionize nano-scale science and technology

Page 42: An Overview of Recent Developments in Nanotechnology

Challenges in Nanowire Growth

• Uni-directional nanowire growth; ⇔ substrate engineering vertical or horizontal ⇔ electric field directed• Uniform nanowire diameter ⇔ soft template control• Acceptable uniform height (± 10%) ⇔ reactor optimization• Localized single nanowire growth ⇔ substrate patterning• High structural integrity ⇔ materials characterization

Vss

Vddin

out

n+

n+

p+

p+

3D view of NW-based CMOS inverter

VssVdd

out

in

Page 43: An Overview of Recent Developments in Nanotechnology

Challenges in Nanowire Growth

• Uni-directional nanowire growth; ⇔ substrate engineering vertical or horizontal ⇔ electric field directed

Understanding of the interfacial epitaxial relationship between potentialsubstrates and nanowire structures ⇔ modeling and simulations ⇔experiments ⇔ combinatorial approach

(0001)

Page 44: An Overview of Recent Developments in Nanotechnology

925¡C

NanowallVLS growth

Au surfacediffusion &aggregationat a node

1D NanowireVLS growth

500nm

Directional Metal Oxide Nanowires & Nanowalls Growth (Cont’)

2µm

1µm

500nm

Ng et al Science 300, 1249 (2003)

Page 45: An Overview of Recent Developments in Nanotechnology

Nanowire-based Vertical Surround Gate FET

Page 46: An Overview of Recent Developments in Nanotechnology

n-NWVFET p-NWVFET

Nanowire-based Vertical Surround Gate FET

Page 47: An Overview of Recent Developments in Nanotechnology
Page 48: An Overview of Recent Developments in Nanotechnology

• Heat shock protein (HSP 60) in organisms living at high temperatures(“extremophiles”) is of interest in astrobiology

• HSP 60 can be purified from cells as a double-ring structure consisting of 16-18 subunits. The double rings can be induced to self-assembleinto nanotubes.

Page 49: An Overview of Recent Developments in Nanotechnology

Nano-scale engineering for high resolution lithography

ExtremophileExtremophile Proteins for Proteins forNano-scale Substrate PatterningNano-scale Substrate Patterning

“quantum dots”nm resolution

Future: Bio-based lithographyFuture: Bio-based lithography••Batch self-assemblyBatch self-assembly••EvolvingEvolving••InexpensiveInexpensive

Page 50: An Overview of Recent Developments in Nanotechnology

• Nanopore in membrane (~2nm diameter)

• DNA in buffer

• Voltage clamp

• Measure current

G. Church, D. Branton, J. Golovchenko, HarvardD. Deamer, UC Santa Cruz

The Concept

Page 51: An Overview of Recent Developments in Nanotechnology

GGA A A A

G

C CTT

Present Future

Page 52: An Overview of Recent Developments in Nanotechnology

• Nanotechnology is an enabling technology that will impact electronicsand computing, materials and manufacturing, energy, transportation….

• The field is interdisciplinary but everything starts with material science.Challenges include:

- Novel synthesis techniques- Characterization of nanoscale properties- Large scale production of materials- Application development

• Opportunities and rewards are great and hence, tremendous worldwideinterest

• Integration of this emerging field into engineering and science curriculumis important to prepare the future generation of scientists and engineers