tlc271, tlc271a, tlc271b lincmos programmable low...
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TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
� Input Offset Voltage Drift . . . Typically0.1 µV/Month, Including the First 30 Days
� Wide Range of Supply Voltages OverSpecified Temperature Range:
0°C to 70°C . . . 3 V to 16 V–40°C to 85°C . . . 4 V to 16 V–55°C to 125°C . . . 5 V to 16 V
� Single-Supply Operation
� Common-Mode Input Voltage RangeExtends Below the Negative Rail (C-Suffixand I-Suffix Types)
� Low Noise . . . 25 nV/√Hz Typically atf = 1 kHz (High-Bias Mode)
� Output Voltage Range Includes NegativeRail
� High Input Impedance . . . 1012 Ω Typ� ESD-Protection Circuitry
� Small-Outline Package Option AlsoAvailable in Tape and Reel
� Designed-In Latch-Up Immunity
description
The TLC271 operational amplifier combines awide range of input offset voltage grades with lowoffset voltage drift and high input impedance. Inaddition, the TLC271 offers a bias-select modethat allows the user to select the best combination of power dissipation and ac performance for a particularapplication. These devices use Texas Instruments silicon-gate LinCMOS technology, which provides offsetvoltage stability far exceeding the stability available with conventional metal-gate processes.
AVAILABLE OPTIONS
VIOmaxPACKAGE
TAVIOmaxAT 25°C SMALL OUTLINE
(D)CHIP CARRIER
(FK)CERAMIC DIP
(JG)PLASTIC DIP
(P)
2 mV TLC271BCD TLC271BCP0°C to 70°C
2 mV5 mV
TLC271BCDTLC271ACD — —
TLC271BCPTLC271ACP
10 mV TLC271CD TLC271CP
2 mV TLC271BID TLC271BIP–40°C to 85°C
2 mV5 mV
TLC271BIDTLC271AID — —
TLC271BIPTLC271AIP
10 mV TLC271ID TLC271IP
–55°C to 125°C 10 mV TLC271MD TLC271MFK TLC271MJG TLC271MP
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLC271BCDR).
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright 2001, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.
1
2
3
4
8
7
6
5
OFFSET N1IN –IN +
GND
BIAS SELECTVDDOUTOFFSET N2
D, JG, OR P PACKAGE(TOP VIEW)
3 2 1 20 19
9 10 11 12 13
4
5
6
7
8
18
17
16
15
14
NCVDDNCOUTNC
NCIN –NC
IN +NC
FK PACKAGE(TOP VIEW)
NC
OF
FS
ET
N1
NC
NC
NC
NC
GN
DN
C
NC – No internal connection
OF
FS
ET
N2
BIA
S S
ELE
CT
LinCMOS is a trademark of Texas Instruments.
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TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
DEVICE FEATURES
PARAMETER†BIAS-SELECT MODE
UNITPARAMETER†HIGH MEDIUM LOW
UNIT
PD 3375 525 50 µWSR 3.6 0.4 0.03 V/µsVn 25 32 68 nV/√HzB1 1.7 0.5 0.09 MHz
AVD 23 170 480 V/mV† Typical at VDD = 5 V, TA = 25°C
description (continued)
Using the bias-select option, these cost-effective devices can be programmed to span a wide range ofapplications that previously required BiFET, NFET, or bipolar technology. Three offset voltage grades areavailable (C-suffix and I-suffix types), ranging from the low-cost TLC271 (10 mV) to the TLC271B (2 mV)low-offset version. The extremely high input impedance and low bias currents, in conjunction with goodcommon-mode rejection and supply voltage rejection, make these devices a good choice for newstate-of-the-art designs as well as for upgrading existing designs.
In general, many features associated with bipolar technology are available in LinCMOS operational amplifiers,without the power penalties of bipolar technology. General applications such as transducer interfacing, analogcalculations, amplifier blocks, active filters, and signal buffering are all easily designed with the TLC271. Thedevices also exhibit low-voltage single-supply operation, making them ideally suited for remote andinaccessible battery-powered applications. The common-mode input voltage range includes the negative rail.
A wide range of packaging options is available, including small-outline and chip-carrier versions for high-densitysystem applications.
The device inputs and output are designed to withstand –100-mA surge currents without sustaining latch-up.
The TLC271 incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000V as tested under MIL-STD-883C, Method 3015.2; however, care should be exercised in handling these devicesas exposure to ESD may result in the degradation of the device parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterizedfor operation from – 40°C to 85°C. The M-suffix devices are characterized for operation over the full militarytemperature range of – 55°C to 125°C.
bias-select feature
The TLC271 offers a bias-select feature that allows the user to select any one of three bias levels dependingon the level of performance desired. The tradeoffs between bias levels involve ac performance and powerdissipation (see Table 1).
Table 1. Effect of Bias Selection on Performance
TYPICAL PARAMETER VALUESMODE
TYPICAL PARAMETER VALUESTA = 25°C, VDD = 5 V HIGH BIAS MEDIUM BIAS LOW BIAS
UNITTA = 25 C, VDD = 5 VRL = 10 kΩ RL = 100 kΩ RL = 1 MΩ
PD Power dissipation 3.4 0.5 0.05 mW
SR Slew rate 3.6 0.4 0.03 V/µsVn Equivalent input noise voltage at f = 1 kHz 25 32 68 nV/√HzB1 Unity-gain bandwidth 1.7 0.5 0.09 MHz
φm Phase margin 46° 40° 34°AVD Large-signal differential voltage amplification 23 170 480 V/mV
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TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
bias selection
Bias selection is achieved by connecting the bias select pin to one of three voltage levels (see Figure 1). Formedium-bias applications, it is recommended that the bias select pin be connected to the midpoint between thesupply rails. This procedure is simple in split-supply applications, since this point is ground. In single-supplyapplications, the medium-bias mode necessitates using a voltage divider as indicated in Figure 1. The use oflarge-value resistors in the voltage divider reduces the current drain of the divider from the supply line. However,large-value resistors used in conjunction with a large-value capacitor require significant time to charge up tothe supply midpoint after the supply is switched on. A voltage other than the midpoint can be used if it is withinthe voltages specified in Figure 1.
VDD
1 MΩ
1 MΩ
0.01 µF
Low
Medium
High
To the BiasSelect Pin
BIAS MODEBIAS-SELECT VOLTAGE
(single supply)
Low
Medium
High
VDD1 V to VDD – 1 V
GND
Figure 1. Bias Selection for Single-Supply Applications
high-bias mode
In the high-bias mode, the TLC271 series features low offset voltage drift, high input impedance, and low noise.Speed in this mode approaches that of BiFET devices but at only a fraction of the power dissipation. Unity-gainbandwidth is typically greater than 1 MHz.
medium-bias mode
The TLC271 in the medium-bias mode features low offset voltage drift, high input impedance, and low noise.Speed in this mode is similar to general-purpose bipolar devices but power dissipation is only a fraction of thatconsumed by bipolar devices.
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TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
low-bias mode
In the low-bias mode, the TLC271 features low offset voltage drift, high input impedance, extremely low powerconsumption, and high differential voltage gain.
ORDER OF CONTENTS
TOPIC BIAS MODE
schematic all
absolute maximum ratings all
recommended operating conditions all
electrical characteristicsoperating characteristicstypical characteristics
high(Figures 2 – 33)
electrical characteristicsoperating characteristicstypical characteristics
medium(Figures 34 – 65)
electrical characteristicsoperating characteristicstypical characteristics
low(Figures 66 – 97)
parameter measurement information all
application information all
equivalent schematic
P3
P1
R1IN –
IN +
P2 R2
P4R6
N5
R5 C1
N3
N2N1
R3 D1
R4
D2N4
OFFSETN1 N2
OFFSET OUT GND
R7
N6
BIASSELECT
N10
N7
N9
N13
N12
N11
P12
P11
P10
P7A P8
P9A
P9B
P7BP6BP6A
P5
VDD
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TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
5POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature (unless otherwise noted)†
Supply voltage, VDD (see Note 1) 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Differential input voltage, VID (see Note 2) ±VDD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage range, VI (any input) – 0.3 V to VDD. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input current, II ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, IO ±30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 3) Unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature, TA: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I suffix – 40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M suffix – 55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range – 65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Case temperature for 60 seconds: FK package 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or P package 260°C. . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: JG package 300°C. . . . . . . . . . . . . . . . . . . .
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to network ground.2. Differential voltages are at IN+ with respect to IN–.3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded (see application section).
DISSIPATION RATING TABLE
PACKAGETA ≤ 25°C
POWER RATINGDERATING FACTORABOVE TA = 25°C
TA = 70°CPOWER RATING
TA = 85°CPOWER RATING
TA = 125°CPOWER RATING
D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW
FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW
JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW
P 1000 mW 8.0 mW/°C 640 mW 520 mW 200 mW
recommended operating conditions
C SUFFIX I SUFFIX M SUFFIXUNIT
MIN MAX MIN MAX MIN MAXUNIT
Supply voltage, VDD 3 16 4 16 5 16 V
Common mode input voltage VICVDD = 5 V –0.2 3.5 –0.2 3.5 0 3.5
VCommon-mode input voltage, VICVDD = 10 V –0.2 8.5 –0.2 8.5 0 8.5
V
Operating free-air temperature, TA 0 70 –40 85 –55 125 °C
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TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TEST †TLC271C, TLC271AC, TLC271BC
PARAMETERTEST
CONDITIONS TA† VDD = 5 V VDD = 10 V UNITCONDITIONS A
MIN TYP MAX MIN TYP MAX
TLC271C25°C 1.1 10 1.1 10
TLC271C
VO = 1 4 VFull range 12 12
VIO Input offset voltage TLC271AC
VO = 1.4 V,VIC = 0 V, 25°C 0.9 5 0.9 5 mVVIO Input offset voltage TLC271AC IC
,RS = 50 Ω,R 10 kΩ
Full range 6.5 6.5mV
TLC271BCRL = 10 kΩ 25°C 0.34 2 0.39 2
TLC271BCFull range 3 3
αVIOAverage temperature coefficientof input offset voltage
25°C to70°C 1.8 2 µV/°C
IIO Input offset current (see Note 4)VO = VDD/2, 25°C 0.1 60 0.1 60 pAIIO Input offset current (see Note 4) O DD
,VIC = VDD/2 70°C 7 300 7 300
pA
IIB Input bias current (see Note 4)VO = VDD/2, 25°C 0.6 60 0.7 60 pAIIB Input bias current (see Note 4) O DD
,VIC = VDD/2 70°C 40 600 50 600
pA
Common mode input voltage
25°C–0.2
to4
–0.3to
4.2
–0.2to9
–0.3to
9.2V
VICRCommon-mode input voltagerange (see Note 5)
Full range–0.2
to3.5
–0.2to
8.5V
V 100 V25°C 3.2 3.8 8 8.5
VOH High-level output voltageVID = 100 mV,RL = 10 kΩ
0°C 3 3.8 7.8 8.5 VRL = 10 kΩ
70°C 3 3.8 7.8 8.4
V 100 V25°C 0 50 0 50
VOL Low-level output voltageVID = –100 mV,IOL = 0
0°C 0 50 0 50 mVIOL = 0
70°C 0 50 0 50
L i l diff ti l R 10 kΩ25°C 5 23 10 36
AVDLarge-signal differentialvoltage amplification
RL = 10 kΩ,See Note 6
0°C 4 27 7.5 42 V/mVvoltage am lification See Note 6
70°C 4 20 7.5 32
25°C 65 80 65 85
CMRR Common-mode rejection ratio VIC = VICRmin 0°C 60 84 60 88 dB
70°C 60 85 60 88
S l lt j ti ti V 5 V t 10 V25°C 65 95 65 95
kSVRSupply-voltage rejection ratio(∆VDD/∆VIO)
VDD = 5 V to 10 VVO = 1 4 V
0°C 60 94 60 94 dB(∆VDD/∆VIO) VO = 1.4 V
70°C 60 96 60 96
II(SEL) Input current (BIAS SELECT) VI(SEL) = 0 25°C –1.4 –1.9 µA
VO = VDD/2,25°C 675 1600 950 2000
IDD Supply currentVO VDD/2,VIC = VDD/2,N l d
0°C 775 1800 1125 2200 µANo load 70°C 575 1300 750 1700
† Full range is 0°C to 70°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
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TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
7POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TEST †TLC271I, TLC271AI, TLC271BI
PARAMETERTEST
CONDITIONS TA† VDD = 5 V VDD = 10 V UNITCONDITIONS A
MIN TYP MAX MIN TYP MAX
TLC271I25°C 1.1 10 1.1 10
TLC271I
VO = 1 4 VFull range 13 13
VIO Input offset voltage TLC271AI
VO = 1.4 V,VIC = 0 V, 25°C 0.9 5 0.9 5 mVVIO Input offset voltage TLC271AI IC
,RS = 50 Ω,R 10 kΩ
Full range 7 7mV
TLC271BIRL = 10 kΩ 25°C 0.34 2 0.39 2
TLC271BIFull range 3.5 3.5
αVIOAverage temperature coefficientof input offset voltage
25°C to 85°C 1.8 2 µV/°C
IIO Input offset current (see Note 4)VO = VDD/2, 25°C 0.1 60 0.1 60 pAIIO Input offset current (see Note 4) O DD
,VIC = VDD/2 85°C 24 1000 26 1000
pA
IIB Input bias current (see Note 4)VO = VDD/2, 25°C 0.6 60 0.7 60 pAIIB Input bias current (see Note 4) O DD
,VIC = VDD/2 85°C 200 2000 220 2000
pA
VICRCommon-mode input
25°C–0.2
to4
–0.3to
4.2
–0.2to9
–0.3to
9.2V
VICR voltage range (see Note 5)
Full range–0.2
to3.5
–0.2to
8.5V
V 100 V25°C 3.2 3.8 8 8.5
VOH High-level output voltageVID = 100 mV,RL = 10 kΩ
–40°C 3 3.8 7.8 8.5 VRL = 10 kΩ
85°C 3 3.8 7.8 8.5
V 100 V25°C 0 50 0 50
VOL Low-level output voltageVID = –100 mV,IOL = 0
–40°C 0 50 0 50 mVIOL = 0
85°C 0 50 0 50
L i l diff ti l R 10 kΩ25°C 5 23 10 36
AVDLarge-signal differentialvoltage amplification
RL = 10 kΩ,See Note 6
–40°C 3.5 32 7 46 V/mVvoltage am lification See Note 6
85°C 3.5 19 7 31
25°C 65 80 65 85
CMRR Common-mode rejection ratio VIC = VICRmin –40°C 60 81 60 87 dB
85°C 60 86 60 88
S l lt j ti ti V 5 V t 10 V25°C 65 95 65 95
kSVRSupply-voltage rejection ratio(∆VDD/∆VIO)
VDD = 5 V to 10 VVO = 1 4 V
–40°C 60 92 60 92 dB(∆VDD/∆VIO) VO = 1.4 V
85°C 60 96 60 96
II(SEL) Input current (BIAS SELECT) VI(SEL) = 0 25°C –1.4 –1.9 µA
VO = VDD/2,25°C 675 1600 950 2000
IDD Supply currentVO VDD/2,VIC = VDD/2,N l d
–40°C 950 2200 1375 2500 µANo load 85°C 525 1200 725 1600
† Full range is –40°C to 85°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TEST †TLC271M
PARAMETERTEST
CONDITIONS TA† VDD = 5 V VDD = 10 V UNITCONDITIONS A
MIN TYP MAX MIN TYP MAX
VO = 1.4 V, 25°C 1 1 10 1 1 10VIO Input offset voltage
VO = 1.4 V,VIC = 0 V,
25°C 1.1 10 1.1 10mVVIO Input offset voltage IC
,RS = 50 Ω, Full range 12 12
mVS
RL = 10 kΩFull range 12 12
αVIOAverage temperature coefficientof input offset voltage
25°C to 125°C 2.1 2.2 µV/°C
IIO Input offset current (see Note 4)VO = VDD/2, 25°C 0.1 60 0.1 60 pAIIO Input offset current (see Note 4) O DD
,VIC = VDD/2 125°C 1.4 15 1.8 15 nA
IIB Input bias current (see Note 4)VO = VDD/2, 25°C 0.6 60 0.7 60 pAIIB Input bias current (see Note 4) O DD
,VIC = VDD/2 125°C 9 35 10 35 nA
VICRCommon-mode input voltage
25°C0to4
–0.3to
4.2
0to9
–0.3to
9.2V
VICRg
range (see Note 5)
Full range0to
3.5
0to
8.5V
V 100 V25°C 3.2 3.8 8 8.5
VOH High-level output voltageVID = 100 mV,RL = 10 kΩ
–55°C 3 3.8 7.8 8.5 VRL = 10 kΩ
125°C 3 3.8 7.8 8.4
V 100 V25°C 0 50 0 50
VOL Low-level output voltageVID = –100 mV,IOL = 0
–55°C 0 50 0 50 mVIOL = 0
125°C 0 50 0 50
L i l diff ti l R 10 kΩ25°C 5 23 10 36
AVDLarge-signal differentialvoltage amplification
RL = 10 kΩ,See Note 6
–55°C 3.5 35 7 50 V/mVvoltage am lification See Note 6
125°C 3.5 16 7 27
25°C 65 80 65 85
CMRR Common-mode rejection ratio VIC = VICRmin –55°C 60 81 60 87 dB
125°C 60 84 60 86
S l lt j ti ti V 5 V t 10 V25°C 65 95 65 95
kSVRSupply-voltage rejection ratio(∆VDD/∆VIO)
VDD = 5 V to 10 VVO = 1 4 V
–55°C 60 90 60 90 dB(∆VDD/∆VIO) VO = 1.4 V
125°C 60 97 60 97
II(SEL) Input current (BIAS SELECT) VI(SEL) = 0 25°C –1.4 –1.9 µA
VO = VDD/2,25°C 675 1600 950 2000
IDD Supply currentVO VDD/2,VIC = VDD/2,N l d
–55°C 1000 2500 1475 3000 µANo load 125°C 475 1100 625 1400
† Full range is –55°C to 125°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
9POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS TA
TLC271C, TLC271AC,TLC271BC UNITA
MIN TYP MAX
25°C 3.6
VI(PP) = 1 V 0°C 4
SR Slew rate at unity gainRL = 10 kΩ,CL 20 pF
( )70°C 3
V/µsSR Slew rate at unity gain CL = 20 pF,See Figure 98 25°C 2.9
V/µsSee Figure 98
VI(PP) = 2.5 V 0°C 3.1( )70°C 2.5
V Equivalent input noise voltagef = 1 kHz, RS = 20 Ω, 25°C 25 nV/√HzVn Equivalent input noise voltage
,See Figure 99
S , 25°C 25 nV/√Hz
V V C 20 F25°C 320
BOM Maximum output-swing bandwidthVO = VOH ,RL = 10 kΩ
CL = 20 pF,See Figure 98
0°C 340 kHzRL = 10 kΩ, See Figure 98
70°C 260
V 10 V C 20 F25°C 1.7
B1 Unity-gain bandwidthVI = 10 mV,See Figure 100
CL = 20 pF, 0°C 2 MHzSee Figure 100
70°C 1.3
V 10 mV f B25°C 46°
φm Phase marginVI = 10 mV,CL = 20 pF,
f = B1,See Figure 100 0°C 47°CL = 20 F, See Figure 100
70°C 44°
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER TEST CONDITIONS TA
TLC271C, TLC271AC,TLC271BC UNITA
MIN TYP MAX
25°C 5.3
VI(PP) = 1 V 0°C 5.9
SR Slew rate at unity gainRL = 10 kΩ,CL 20 pF
( )70°C 4.3
V/µsSR Slew rate at unity gain CL = 20 pF,See Figure 98 25°C 4.6
V/µsSee Figure 98
VI(PP) = 5.5 V 0°C 5.1( )70°C 3.8
V Equivalent input noise voltagef = 1 kHz, RS = 20 Ω, 25°C 25 nV/√HzVn Equivalent input noise voltage
,See Figure 99
S , 25°C 25 nV/√Hz
V V C 20 F25°C 200
BOM Maximum output-swing bandwidthVO = VOH,RL = 10 kΩ
CL = 20 pF,See Figure 98
0°C 220 kHzRL = 10 kΩ, See Figure 98
70°C 140
V 10 V C 20 F25°C 2.2
B1 Unity-gain bandwidthVI = 10 mV,See Figure 100
CL = 20 pF, 0°C 2.5 MHzSee Figure 100
70°C 1.8
f B V 10 mV25°C 49°
φm Phase marginf = B1,CL = 20 pF,
VI = 10 mV,See Figure 100 0°C 50°CL = 20 F, See Figure 100
70°C 46°
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS TA
TLC271I, TLC271AI,TLC271BI UNITA
MIN TYP MAX
25°C 3.6
VI(PP) = 1 V –40°C 4.5
SR Slew rate at unity gainRL = 10 kΩ,CL = 20 pF
( )85°C 2.8
V/µsSR Slew rate at unity gain CL = 20 pF,See Figure 98 25°C 2.9
V/µsSee Figure 98
VI(PP) = 2.5 V –40°C 3.5( )85°C 2.3
V Equivalent input noise voltagef = 1 kHz, RS = 20 Ω, 25°C 25 nV/√HVn Equivalent input noise voltage
,See Figure 99
S , 25°C 25 nV/√Hz
V V C 20 F25°C 320
BOM Maximum output-swing bandwidthVO = VOH,RL = 10 kΩ
CL = 20 pF,See Figure 98
–40°C 380 kHzRL = 10 kΩ, See Figure 98
85°C 250
V 10 V C 20 F25°C 1.7
B1 Unity-gain bandwidthVI = 10 mV,See Figure 100
CL = 20 pF, –40°C 2.6 MHzSee Figure 100
85°C 1.2
V 10 mV f B25°C 46°
φm Phase marginVI = 10 mV,CL = 20 pF
f = B1,See Figure 100 –40°C 49°CL = 20 F, See Figure 100
85°C 43°
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER TEST CONDITIONS TA
TLC271I, TLC271AI,TLC271BI UNITA
MIN TYP MAX
25°C 5.3
VI(PP) = 1 V –40°C 6.8
SR Slew rate at unity gainRL = 10 kΩ,CL = 20 pF
( )85°C 4
V/µsSR Slew rate at unity gain CL = 20 pF,See Figure 98 25°C 4.6
V/µsSee Figure 98
VI(PP) = 5.5 V –40°C 5.8( )85°C 3.5
V Equivalent input noise voltagef = 1 kHz, RS = 20 Ω, 25°C 25 nV/√HzVn Equivalent input noise voltage
,See Figure 99
S , 25°C 25 nV/√Hz
V V C 20 F25°C 200
BOM Maximum output-swing bandwidthVO = VOH,RL = 10 kΩ
CL = 20 pF,See Figure 98
–40°C 260 kHzRL = 10 kΩ, See Figure 98
85°C 130
V 10 V C 20 F25°C 2.2
B1 Unity-gain bandwidthVI = 10 mV,See Figure 100
CL = 20 pF, –40°C 3.1 MHzSee Figure 100
85°C 1.7
V 10 mV f B25°C 49°
φm Phase marginVI = 10 mV,CL = 20 pF
f= B1,See Figure 100 –40°C 52°CL = 20 F, See Figure 100
85°C 46°
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
11POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS TATLC271M
UNITPARAMETER TEST CONDITIONS TA MIN TYP MAXUNIT
25°C 3.6
VI(PP) = 1 V –55°C 4.7
SR Slew rate at unity gainRL = 10 kΩ,CL 20 pF
( )125°C 2.3
V/µsSR Slew rate at unity gain CL = 20 pF,See Figure 98 25°C 2.9
V/µsSee Figure 98
VI(PP) = 2.5 V –55°C 3.7( )125°C 2
V Equivalent input noise voltagef = 1 kHz, RS = 20 Ω, 25°C 25 nV/√HVn Equivalent input noise voltage
,See Figure 99
S , 25°C 25 nV/√Hz
V V C 20 F25°C 320
BOM Maximum output-swing bandwidthVO = VOH,RL = 10 kΩ
CL = 20 pF,See Figure 98
–55°C 400 kHzRL = 10 kΩ, See Figure 98
125°C 230
V 10 V C 20 F25°C 1.7
B1 Unity-gain bandwidthVI = 10 mV,See Figure 100
CL = 20 pF, –55°C 2.9 MHzSee Figure 100
125°C 1.1
V 10 mV f B25°C 46°
φm Phase marginVI = 10 mV,CL = 20 pF,
f = B1,See Figure 100 –55°C 49°CL = 20 F, See Figure 100
125°C 41°
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER TEST CONDITIONS TATLC271M
UNITPARAMETER TEST CONDITIONS TA MIN TYP MAXUNIT
25°C 5.3
VI(PP) = 1 V –55°C 7.1
SR Slew rate at unity gainRL = 10 kΩ,CL 20 pF
( )125°C 3.1
V/µsSR Slew rate at unity gain CL = 20 pF,See Figure 98 25°C 4.6
V/µsSee Figure 98
VI(PP) = 5.5 V –55°C 6.1( )125°C 2.7
V Equivalent input noise voltagef = 1 kHz, RS = 20 Ω, 25°C 25 nV/√HVn Equivalent input noise voltage
,See Figure 99
S , 25°C 25 nV/√Hz
V V C 20 F25°C 200
BOM Maximum output-swing bandwidthVO = VOH,RL = 10 kΩ
CL = 20 pF,See Figure 98
–55°C 280 kHzRL = 10 kΩ, See Figure 98
125°C 110
V 10 V C 20 F25°C 2.2
B1 Unity-gain bandwidthVI = 10 mV,See Figure 100
CL = 20 pF, –55°C 3.4 MHzSee Figure 100
125°C 1.6
f B V 10 mV25°C 49°
φm Phase marginf = B1,CL = 20 pF,
VI = 10 mV,See Figure 100 –55°C 52°CL = 20 F, See Figure 100
125°C 44°
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)
Table of Graphs
FIGURE
VIO Input offset voltage Distribution 2, 3
αVIO Temperature coefficient Distribution 4, 5
vs High-level output current 6, 7VOH High-level output voltage
vs High level out ut currentvs Supply voltage
6, 78OH g g y g
vs Free-air temperature 9
vs Common-mode input voltage 10, 11
VOL Low level output voltage
vs Common mode in ut voltagevs Differential input voltage
10, 1112VOL Low-level output voltage
gvs Free-air temperature 13vs Low-level output current 14, 15
vs Supply voltage 16AVD Large-signal differential voltage amplification
vs Su ly voltagevs Free-air temperature
1617VD g g g
vs Frequency 28, 29
IIB Input bias current vs Free-air temperature 18
IIO Input offset current vs Free-air temperature 18
VIC Common-mode input voltage vs Supply voltage 19
IDD Supply currentvs Supply voltage 20
IDD Supply currenty g
vs Free-air temperature 21
SR Slew ratevs Supply voltage 22
SR Slew ratey g
vs Free-air temperature 23
Bias-select current vs Supply voltage 24
VO(PP) Maximum peak-to-peak output voltage vs Frequency 25
B1 Unity gain bandwidthvs Free-air temperature 26
B1 Unity-gain bandwidth vs Supply voltage 27
AVD Large-signal differential voltage amplification vs Frequency 28, 29
vs Supply voltage 30φm Phase margin
vs Su ly voltagevs Free-air temperature
3031φm g
vs Capacitive load 32
Vn Equivalent input noise voltage vs Frequency 33
Phase shift vs Frequency 28, 29
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
13POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
Figure 2
– 50
Per
cen
tag
e o
f U
nit
s –
%
VIO – Input Offset Voltage – mV5
60
– 4 – 3 – 2 – 1 0 1 2 3 4
10
20
30
40
50
DISTRIBUTION OF TLC271INPUT OFFSET VOLTAGE
TA = 25°CP Package
ÎÎÎÎÎÎÎÎÎÎÎÎ753 Amplifiers Tested From 6 Wafer LotsVDD = 5 V
Figure 3
50
40
30
20
10
43210– 1– 2– 3– 4
60
5P
erce
nta
ge
of
Un
its
– %
0– 5
DISTRIBUTION OF TLC271INPUT OFFSET VOLTAGE
VIO – Input Offset Voltage – mV
P Package
TA = 25°CVDD = 10 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
753 Amplifiers Tested From 6 Wafer Lots
Figure 4
50
40
30
20
10
86420– 2– 4– 6– 8
60
10αVIO – Temperature Coefficient – µV/°C
Per
cen
tag
e o
f U
nit
s –
%
0– 10
DISTRIBUTION OF TLC271INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
P PackageTA = 25°C to 125°CVDD = 5 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
324 Amplifiers Tested From 8 Wafer Lots
Outliers:
ÎÎÎÎÎ(1) 20.5 µV/°C
Figure 5
– 100
Per
cen
tag
e o
f U
nit
s –
%
10
60
– 8 – 6 – 4 – 2 0 2 4 6 8
10
20
30
40
50
DISTRIBUTION OF TLC271INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
TA = 25°C to 125°C
Outliers:P Package
ÎÎÎÎÎ(1) 21.2 µV/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
324 Amplifiers Tested From 8 Wafer lotsVDD = 10 V
αVIO – Temperature Coefficient – µV/°C
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
Figure 6
00
VO
H –
Hig
h-L
evel
Ou
tpu
t V
olt
age
– V
IOH – High-Level Output Current – mA– 10
5
– 2 – 4 – 6 – 8
1
2
3
4TA = 25°CVID = 100 mV
VDD = 5 V
VDD = 4 V
VDD = 3 V
HIGH-LEVEL OUTPUT VOLTAGEvs
HIGH-LEVEL OUTPUT CURRENT
ÁÁÁÁÁÁÁÁÁ
V OH
Figure 7
00
IOH – High-Level Output Current – mA
– 40
16
– 10 – 20 – 30
2
4
6
8
10
12
14
VDD = 16 V
ÎÎÎÎÎÎÎÎÎÎ
VDD = 10 V
VID = 100 mVTA = 25°C
HIGH-LEVEL OUTPUT VOLTAGEvs
HIGH-LEVEL OUTPUT CURRENT
VO
H –
Hig
h-L
evel
Ou
tpu
t V
olt
age
– V
ÁÁÁÁÁÁ
V OH
– 5 – 15 – 25 – 35
Figure 8
0VDD – Supply Voltage – V
162 4 6 8 10 12 14
14
12
10
8
6
4
2
16
0
VID = 100 mVRL = 10 kΩTA = 25°C
HIGH-LEVEL OUTPUT VOLTAGEvs
SUPPLY VOLTAGE
VO
H –
Hig
h-L
evel
Ou
tpu
t V
olt
age
– V
ÁÁÁÁV
OH
Figure 9
– 1.7
– 1.8
– 1.9
– 2
– 2.1
– 2.2
– 2.3
1007550200– 25– 50
VDD – 1.6
125TA – Free-Air Temperature – °C
– 2.4– 75
IOH = –5 mAVID = 100 mA
VDD = 5 V
VDD = 10 V
HIGH-LEVEL OUTPUT VOLTAGEvs
FREE-AIR TEMPERATURE
VO
H –
Hig
h-L
evel
Ou
tpu
t V
olt
age
– V
ÁÁÁÁV
OH
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
15POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
Figure 10
0300
VO
L –
Lo
w-L
evel
Ou
tpu
t V
olt
age
– m
V
VIC – Common-Mode Input Voltage – V4
700
1 2 3
400
500
600
TA = 25°CIOL = 5 mAVDD = 5 V
VID = –1 V
LOW-LEVEL OUTPUT VOLTAGEvs
COMMON-MODE INPUT VOLTAGE
650
550
450
350ÁÁÁÁ
VO
L
ÎÎÎÎÎÎÎÎÎÎÎÎ
VID = –100 mV
Figure 11
2500
VIC – Common-Mode Input Voltage – V
300
350
400
450
500
2 4 6 8 10
VDD = 10 VIOL = 5 mATA = 25°C
VID = –1 V
VID = –2.5 V
VID = –100 mV
LOW-LEVEL OUTPUT VOLTAGEvs
COMMON-MODE INPUT VOLTAGE
1 3 5 7 9
VO
L –
Lo
w-L
evel
Ou
tpu
t V
olt
age
– m
V
ÁÁÁÁÁÁ
VO
L
Figure 12
0VID – Differential Input Voltage – V
– 10– 2 – 4 – 6 – 8
800
700
600
500
400
300
200
100
0
IOL = 5 mAVIC = VID/2TA = 25°C
VDD = 10 V
LOW-LEVEL OUTPUT VOLTAGEvs
DIFFERENTIAL INPUT VOLTAGE
VO
L –
Lo
w-L
evel
Ou
tpu
t V
olt
age
– m
V
ÁÁÁÁ
VO
L
– 1 – 3 – 5 – 7 – 9
ÎÎÎÎÎÎÎÎ
VDD = 5 V
Figure 13
– 750
TA – Free-Air Temperature – °C125
900
– 50 – 25 0 25 50 75 100
100
200
300
400
500
600
700
800VIC = 0.5 VVID = –1 VIOL = 5 mA
LOW-LEVEL OUTPUT VOLTAGEvs
FREE-AIR TEMPERATURE
VO
L –
Lo
w-L
evel
Ou
tpu
t V
olt
age
– m
V
ÁÁÁÁ
VO
L
ÎÎÎÎÎÎÎÎ
VDD = 10 V
ÎÎÎÎVDD = 5 V
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
Figure 14
LOW-LEVEL OUTPUT VOLTAGEvs
LOW-LEVEL OUTPUT CURRENT
0IOL – Low-Level Output Current – mA
1
80
1 2 3 4 5 6 7
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9VID = –1 VVIC = 0.5 VTA = 25°C
VDD = 5 V
VO
L –
Lo
w-L
evel
Ou
tpu
t V
olt
age
– m
V
ÁÁÁÁ
VO
L
ÎÎÎÎÎÎÎÎ
VDD = 3 V
ÎÎÎÎVDD = 4 V
Figure 15
0IOL – Low-Level Output Current – mA
3
300
5 10 15 20 25
0.5
1
1.5
2
2.5 TA = 25°CVIC = 0.5 VVID = –1 V
VDD = 10 V
VDD = 16 V
LOW-LEVEL OUTPUT VOLTAGEvs
LOW-LEVEL OUTPUT CURRENT
VO
L –
Lo
w-L
evel
Ou
tpu
t V
olt
age
– m
V
ÁÁÁÁÁÁ
VO
L
Figure 16
0
60
160
2 4 6 8 10 12 14
10
20
30
40
50
VDD – Supply Voltage – V
85°C
125°C
TA = – 55°CÎÎÎÎÎÎÎÎ
RL = 10 kΩ
LARGE-SIGNALDIFFERENTIAL VOLTAGE AMPLIFICATION
vsSUPPLY VOLTAGE
ÎÎÎÎÎÎ
0°C
ÎÎÎÎÎÎ
25°C
AV
D –
Lar
ge-
Sig
nal
Dif
fere
nti
al
ÁÁÁÁÁÁ
AV
DV
olt
age
Am
plif
icat
ion
– V
/mV
Figure 17
– 75TA – Free-Air Temperature – °C
50
1250
– 50 – 25 0 25 50 75 100
5
10
15
20
25
30
35
40
45
VDD = 5 V
VDD = 10 V
LARGE-SIGNALDIFFERENTIAL VOLTAGE AMPLIFICATION
vsFREE-AIR TEMPERATURE
AV
D –
Lar
ge-
Sig
nal
Dif
fere
nti
al
ÁÁÁÁÁÁ
AV
DV
olt
age
Am
plif
icat
ion
– V
/mV
ÎÎÎÎÎÎÎÎÎÎ
RL = 10 kΩ
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
17POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
Figure 18
0.1125
10000
45 65 85 105
1
10
100
1000
25TA – Free-Air Temperature – °C
INPUT BIAS CURRENT AND INPUT OFFSETCURRENT
vsFREE-AIR TEMPERATURE
ÁÁÁÁÁÁÁÁÁÁÁÁ
VDD = 10 VVIC = 5 VSee Note A
ÎÎÎÎ
IIB
ÎÎÎÎ
IIO
IIB a
nd
IIO
– In
pu
t B
ias
and
IBII I
OIn
pu
t O
ffse
t C
urr
ents
– n
A
NOTE A: The typical values of input bias current and input offsetcurrent below 5 pA were determined mathematically.
Figure 19
0VDD – Supply Voltage – V
16
160
2 4 6 8 10 12 14
2
4
6
8
10
12
14TA = 25°C
COMMON-MODE INPUT VOLTAGE(POSITIVE LIMIT)
vsSUPPLY VOLTAGE
–
Co
mm
on
-Mo
de
Inp
ut
Vo
ltag
e –
VV
IC
Figure 20
0
IDD
– S
up
ply
Cu
rren
t –
mA
VDD – Supply Voltage – V
2.5
160
2 4 6 8 10 12 14
0.5
1
1.5
2 TA =–55°C
25°C
70°C
125°C
SUPPLY CURRENTvs
SUPPLY VOLTAGE
ÁÁÁÁÁÁÁÁÁ
DD
I
ÎÎÎ0°C
ÎÎÎÎÎÎÎÎ
VO = VDD/2No Load
Figure 21
– 75TA – Free-Air Temperature – °C
2
1250
0.5
1
1.5
– 50 – 25 0 25 50 75 100
VDD = 10 V
VDD = 5 V
SUPPLY CURRENTvs
FREE-AIR TEMPERATURE
IDD
– S
up
ply
Cu
rren
t –
mA
ÁÁÁÁÁÁ
DD
I
ÎÎÎÎÎÎÎÎÎÎ
VO = VDD/2No Load
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
Figure 22
TA = 25°CSee Figure 98
AV = 1VI(PP) = 1 VRL = 10 kΩCL = 20 pF
8
7
6
5
4
3
2
1
14121086420
16VDD – Supply Voltage – V
SR
– S
lew
Rat
e –
V/ u
s
0
SLEW RATEvs
SUPPLY VOLTAGE
sµ
Figure 23
VDD = 10 V
VI(PP) = 1 VVDD = 5 V
RL = 10 kΩAV = 1
See Figure 99CL = 20 pF
–750
1
2
3
4
5
6
7
8
1007550250–25–50 125TA – Free-Air Temperature – °C
SLEW RATEvs
FREE-AIR TEMPERATURE
SR
– S
lew
Rat
e –
V/ u
s sµ
ÎÎÎÎÎÎÎÎÎÎ
VDD = 10 VÎÎÎÎÎÎÎÎÎÎ
VI(PP) = 5.5 V
ÎÎÎÎVI(PP) = 1 V
ÎÎÎÎÎÎÎÎÎÎ
VDD = 5 V
ÎÎÎÎÎÎÎÎÎÎÎÎ
VI(PP) = 2.5 V
Figure 24
VI(SEL) = 0TA = 25°C
– 2.4
– 1.8
– 1.2
– 0.6
14121086420
16
– 3
VDD – Supply Voltage – V0
BIAS-SELECT CURRENTvs
SUPPLY VOLTAGE
– 2.7
– 2.1
– 1.5
– 0.9
– 0.3
Bia
s-S
elec
t C
urr
ent
– u
a Aµ
Figure 25
ÎÎÎÎÎÎÎÎ
VDD = 5 V
1000100
9
8
7
6
5
4
3
2
1
010000
10
f – Frequency – kHz10
MAXIMUM PEAK-TO-PEAK OUTPUTVOLTAGE
vsFREQUENCY
ÎÎÎÎÎÎÎÎ
TA = 125°C
ÎÎÎÎTA = 25°CÎÎÎÎÎÎÎÎ
TA = 55°C
ÎÎÎÎÎÎÎÎ
VDD = 10 V
ÎÎÎÎRL = 10 kΩÎÎÎÎÎÎÎÎÎÎ
See Figure 98– M
axim
um
Pea
k-to
-Pea
k O
utp
ut
Vo
ltag
e –
VV O
(PP
)
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
19POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
Figure 26
See Figure 100CL = 20 pFVI = 10 mVVDD = 5 V
2.5
2
1.5
1007550250– 25– 501
125
3
TA – Free-Air Temperature – °C
B1
– U
nit
y-G
ain
Ban
dw
idth
– M
Hz
– 75
UNITY-GAIN BANDWIDTHvs
FREE-AIR TEMPERATURE
B1
Figure 27
VI = 10 mVCL = 20 pFTA = 25°CSee Figure 100
2
1.5
14121086421
16
2.5
VDD – Supply Voltage – V0
UNITY-GAIN BANDWIDTHvs
SUPPLY VOLTAGE
B1
– U
nit
y-G
ain
Ban
dw
idth
– M
Hz
B1
Phase Shift
AVD
VDD = 5 VRL = 10 kΩTA = 25°C
Ph
ase
Sh
ift
106
105
104
103
102
101
1
1 M100 k10 k1 k1000.1
10 Mf – Frequency – Hz
10
LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT
vsFREQUENCY
107
150°
120°
90°
60°
30°
0°
180°
AV
D –
Lar
ge-
Sig
nal
Dif
fere
nti
al
ÁÁÁÁ
AV
DV
olt
age
Am
plif
icat
ion
Figure 28
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
20 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
Phase Shift
AVD
TA = 25°CRL = 10 kΩVDD = 10 V
Ph
ase
Sh
ift
150°
120°
90°
60°
30°
0°
180°
106
105
104
103
102
101
1
1 M100 k10 k1 k1000.1
10 Mf – Frequency – Hz
10
LARGE-SCALE DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT
vsFREQUENCY
107A
VD
– L
arg
e-S
ign
al D
iffe
ren
tial
ÁÁÁÁA
VD
Vo
ltag
e A
mp
lific
atio
n
Figure 29
Figure 30
0
m –
Ph
ase
Mar
gin
VDD – Supply Voltage – V
53°
162 4 6 8 10 12 14
47°
49°
51°
CL = 20 pFTA = 25°C
VI = 10 mV
See Figure 100
PHASE MARGINvs
SUPPLY VOLTAGE
46°
45°
48°
50°
52°
ÁÁÁÁ
mφ
Figure 31
– 75
50°
12540°
– 50 – 25 0 25 50 75 100
42°
44°
46°
48°
VDD = 5 V
CL = 20 pFVI = 10 mV
See Figure 100
TA – Free-Air Temperature – °C
PHASE MARGINvs
FREE-AIR TEMPERATURE
m –
Ph
ase
Mar
gin
ÁÁÁÁ
mφ
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
21POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (HIGH-BIAS MODE)†
Figure 32
0CL – Capacitive Load – pF
50°
10025°
20 40 60 80
30°
35°
40°
45°See Figure 100
VI = 10 mVTA = 25°C
VDD = 5 mV
PHASE MARGINvs
CAPACITIVE LOAD
m –
Ph
ase
Mar
gin
ÁÁÁÁ
mφ
Figure 33
VN
– E
qu
ival
ent
Inp
ut
No
ise
Vo
ltag
e –
nV
/Hz
1f – Frequency – Hz
400
10000
100
200
300
10 100
EQUIVALENT NOISE VOLTAGEvs
FREQUENCY
Vn
ÁÁÁÁÁÁÁÁ
nV
/H
z
350
250
150
50
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VDD = 5 V
TA = 25°CRS = 20 Ω
See Figure 99
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
22 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MEDIUM-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
†TLC271C, TLC271AC, TLC271BC
PARAMETER TEST CONDITIONS TA† VDD = 5 V VDD = 10 V UNITAMIN TYP MAX MIN TYP MAX
TLC271C25°C 1.1 10 1.1 10
TLC271CVO = 1 4 V
Full range 12 12
VIO Input offset voltage TLC271AC
VO = 1.4 V,VIC = 0 25°C 0.9 5 0.9 5 mVVIO Input offset voltage TLC271AC ICRS = 50 Ω,R 100 kΩ
Full range 6.5 6.5mV
TLC271BCRI = 100 kΩ 25°C 0.25 2 0.26 2
TLC271BCFull range 3 3
αVIOAverage temperature coefficient of input offset voltage
25°C to70°C 1.7 2.1 µV/°C
IIO Input offset current (see Note 4)VO = VDD/2, 25°C 0.1 60 0.1 60 pAIIO Input offset current (see Note 4) O DD
,VIC = VDD/2 70°C 7 300 7 300
pA
IIB Input bias current (see Note 4)VO = VDD/2, 25°C 0.6 60 0.7 60 pAIIB Input bias current (see Note 4) O DD
,VIC = VDD/2 70°C 40 600 50 600
pA
VICRCommon-mode input
25°C–0.2
to4
–0.3to
4.2
–0.2to9
–0.3to
9.2V
VICR voltage range (see Note 5)
Full range–0.2
to3.5
–0.2to
8.5V
V 100 V25°C 3.2 3.9 8 8.7
VOH High-level output voltageVID = 100 mV,RL = 100 kΩ
0°C 3 3.9 7.8 8.7 VRL = 100 kΩ
70°C 3 4 7.8 8.7
V 100 V25°C 0 50 0 50
VOL Low-level output voltageVID = –100 mV,IOL = 0
0°C 0 50 0 50 mVIOL = 0
70°C 0 50 0 50
L i l diff ti l R 100 kΩ25°C 25 170 25 275
AVDLarge-signal differentialvoltage amplification
RL = 100 kΩ,See Note 6
0°C 15 200 15 320 V/mVvoltage am lification See Note 6
70°C 15 140 15 230
25°C 65 91 65 94
CMRR Common-mode rejection ratio VIC = VICRmin 0°C 60 91 60 94 dB
70°C 60 92 60 94
S l lt j ti ti V 5 V t 10 V25°C 70 93 70 93
kSVRSupply-voltage rejection ratio(∆VDD/∆VIO)
VDD = 5 V to 10 VVO = 1 4 V
0°C 60 92 60 92 dB(∆VDD/∆VIO) VO = 1.4 V
70°C 60 94 60 94
II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD/2 25°C –130 –160 nA
VO = VDD/2,25°C 105 280 143 300
IDD Supply currentVO VDD/2,VIC = VDD/2, 0°C 125 320 173 400 µANo load 70°C 85 220 110 280
† Full range is 0°C to 70°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
23POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MEDIUM-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TEST †TLC271I, TLC271AI, TLC271BI
PARAMETERTEST
CONDITIONSTA† VDD = 5 V VDD = 10 V UNITCONDITIONS A
MIN TYP MAX MIN TYP MAX
TLC271I25°C 1.1 10 1.1 10
TLC271IVO = 1 4 V
Full range 13 13
VIO Input offset voltage TLC271AI
VO = 1.4 V,VIC = 0 V, 25°C 0.9 5 0.9 5 mVVIO Input offset voltage TLC271AI IC
,RS = 50 Ω,R 100 kΩ
Full range 7 7mV
TLC271BIRL = 100 kΩ 25°C 0.25 2 0.26 2
TLC271BIFull range 3.5 3.5
αVIOAverage temperature coefficient of input offset voltage
25°C to85°C 1.7 2.1 µV/°C
IIO Input offset current (see Note 4)VO = VDD/2, 25°C 0.1 60 0.1 60 pAIIO Input offset current (see Note 4) O DD
,VIC = VDD/2 85°C 24 1000 26 1000
pA
IIB Input bias current (see Note 4)VO = VDD/2, 25°C 0.6 60 0.7 60 pAIIB Input bias current (see Note 4) O DD
,VIC = VDD/2 85°C 200 2000 220 2000
pA
VICRCommon-mode input
25°C–0.2
to4
–0.3to
4.2
–0.2to9
–0.3to
9.2V
VICR voltage range (see Note 5)
Full range–0.2
to3.5
–0.2to
8.5V
V 100 V25°C 3.2 3.9 8 8.7
VOH High-level output voltageVID = 100 mV,RL = 100 kΩ
–40°C 3 3.9 7.8 8.7 VRL = 100 kΩ
85°C 3 4 7.8 8.7
V 100 V25°C 0 50 0 50
VOL Low-level output voltageVID = –100 mV,IOL = 0
–40°C 0 50 0 50 mVIOL = 0
85°C 0 50 0 50
L i l diff ti l R 100 kΩ25°C 25 170 25 275
AVDLarge-signal differentialvoltage amplification
RL = 100 kΩ,See Note 6
–40°C 15 270 15 390 V/mVvoltage am lification See Note 6
85°C 15 130 15 220
25°C 65 91 65 94
CMRR Common-mode rejection ratio VIC = VICRmin –40°C 60 90 60 93 dB
85°C 60 90 60 94
S l lt j ti ti V 5 V t 10 V25°C 70 93 70 93
kSVRSupply-voltage rejection ratio(∆VDD/∆VIO)
VDD = 5 V to 10 VVO = 1 4 V
–40°C 60 91 60 91 dB(∆VDD/∆VIO) VO = 1.4 V
85°C 60 94 60 94
II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD/2 25°C –130 –160 nA
VO = VDD/2,25°C 105 280 143 300
IDD Supply currentVO VDD/2,VIC = VDD/2, –40°C 158 400 225 450 µANo load 85°C 80 200 103 260
† Full range is –40°C to 85°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
24 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MEDIUM-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TEST †TLC271M
PARAMETERTEST
CONDITIONSTA† VDD = 5 V VDD = 10 V UNITCONDITIONS A
MIN TYP MAX MIN TYP MAX
VIO Input offset voltage
VO = 1.4 V,VIC = 0 V,
25°C 1.1 10 1.1 10 mVVIO Input offset voltage
RS = 50 Ω,RL = 100 kΩ
Full range 12 12
αVIOAverage temperature coefficient of input offset voltage
25°C to 125°C 1.7 2.1 µV/°C
IIO Input offset current (see Note 4)VO = VDD/2, 25°C 0.1 60 0.1 60 pAIIO Input offset current (see Note 4) O DD
,VIC = VDD/2 125°C 1.4 15 1.8 15 nA
IIB Input bias current (see Note 4)VO = VDD/2, 25°C 0.6 60 0.7 60 pAIIB Input bias current (see Note 4) O DD
,VIC = VDD/2 125°C 9 35 10 35 nA
VICRCommon-mode input
25°C0to4
–0.3to
4.2
0to9
–0.3to
9.2V
VICR voltage range (see Note 5)
Full range0to
3.5
0to
8.5V
V 100 V25°C 3.2 3.9 8 8.7
VOH High-level output voltageVID = 100 mV,RL = 100 kΩ
–55°C 3 3.9 7.8 8.6 VRL = 100 kΩ
125°C 3 4 7.8 8.6
V 100 V25°C 0 50 0 50
VOL Low-level output voltageVID = –100 mV,IOL = 0
–55°C 0 50 0 50 mVIOL = 0
125°C 0 50 0 50
L i l diff ti l R 10 kΩ25°C 25 170 25 275
AVDLarge-signal differentialvoltage amplification
RL = 10 kΩSee Note 6
–55°C 15 290 15 420 V/mVvoltage am lification See Note 6
125°C 15 120 15 190
25°C 65 91 65 94
CMRR Common-mode rejection ratio VIC = VICRmin –55°C 60 89 60 93 dB
125°C 60 91 60 93
S l lt j ti ti V 5 V t 10 V25°C 70 93 70 93
kSVRSupply-voltage rejection ratio(∆VDD/∆VIO)
VDD = 5 V to 10 VVO = 1 4 V
–55°C 60 91 60 91 dB(∆VDD/∆VIO) VO = 1.4 V
125°C 60 94 60 94
II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD/2 25°C –130 –160 nA
VO = VDD/2,25°C 105 280 143 300
IDD Supply currentVO VDD/2,VIC = VDD/2, –55°C 170 440 245 500 µANo load 125°C 70 180 90 240
† Full range is –55°C to 125°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
25POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MEDIUM-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS TA
TLC271C, TLC271AC,TLC271BC UNITA
MIN TYP MAX
25°C 0.43
VI(PP) = 1 V 0°C 0.46
SR Slew rate at unity gainRL = 100 kΩ,CL = 20 pF
( )70°C 0.36
V/µsSR Slew rate at unity gain CL = 20 pF,See Figure 98 25°C 0.40
V/µsSee Figure 98
VI(PP) = 2.5 V 0°C 0.43( )70°C 0.34
Vn Equivalent input noise voltagef = 1 kHz,See Figure 99
RS = 20 Ω, 25°C 32 nV/√Hz
V V C 20 F25°C 55
BOM Maximum output-swing bandwidthVO = VOH,RL = 100 kΩ
CL = 20 pF,See Figure 98
0°C 60 kHzRL = 100 kΩ, See Figure 98
70°C 50
V 10 V C 20 F25°C 525
B1 Unity-gain bandwidthVI = 10 mV,See Figure 100
CL = 20 pF, 0°C 600 kHzSee Figure 100
70°C 400
V 10 mV f B25°C 40°
φm Phase marginVI = 10 mV,CL = 20 pF
f = B1,See Figure 100 0°C 41°CL = 20 F, See Figure 100
70°C 39°
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER TEST CONDITIONS TA
TLC271C, TLC271AC,TLC271BC UNITA
MIN TYP MAX
25°C 0.62
VI(PP) = 1 V 0°C 0.67
SR Slew rate at unity gainRL = 100 kΩ,CL = 20 pF
( )70°C 0.51
V/µsSR Slew rate at unity gain CL = 20 pF,See Figure 98 25°C 0.56
V/µsSee Figure 98
VI(PP) = 5.5 V 0°C 0.61( )70°C 0.46
Vn Equivalent input noise voltagef = 1 kHz,See Figure 99
RS = 20 Ω, 25°C 32 nV/√Hz
V V C 20 F25°C 35
BOM Maximum output-swing bandwidthVO = VOH,RL = 100 kΩ
CL = 20 pF,See Figure 98
0°C 40 kHzRL = 100 kΩ, See Figure 98
70°C 30
V 10 V C 20 F25°C 635
B1 Unity-gain bandwidthVI = 10 mV,See Figure 100
CL = 20 pF, 0°C 710 kHzSee Figure 100
70°C 510
V 10 mV f B25°C 43°
φm Phase marginVI = 10 mV,CL = 20 pF
f = B1,See Figure 100 0°C 44°CL = 20 F, See Figure 100
70°C 42°
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
26 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MEDIUM-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS TA
TLC271I, TLC271AI,TLC271BI UNITA
MIN TYP MAX
25°C 0.43
VI(PP) = 1 V –40°C 0.51
SR Slew rate at unity gainRL = 100 kΩ,CL = 20 pF
( )85°C 0.35
V/µsSR Slew rate at unity gain CL = 20 pF,See Figure 98 25°C 0.40
V/µsSee Figure 98
VI(PP) = 2.5 V –40°C 0.48( )85°C 0.32
Vn Equivalent input noise voltagef = 1 kHz,See Figure 99
RS = 20 Ω, 25°C 32 nV/√Hz
V V C 20 F25°C 55
BOM Maximum output-swing bandwidthVO = VOH,RL = 100 kΩ
CL = 20 pF,See Figure 98
–40°C 75 kHzRL = 100 kΩ, See Figure 98
85°C 45
V 10 V C 20 F25°C 525
B1 Unity-gain bandwidthVI = 10 mV,See Figure 100
CL = 20 pF, –40°C 770 MHzSee Figure 100
85°C 370
V 10 mV f B25°C 40°
φm Phase marginVI = 10 mV,CL = 20 pF
f = B1,See Figure 100 –40°C 43°CL = 20 F, See Figure 100
85°C 38°
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER TEST CONDITIONS TA
TLC271I, TLC271AI,TLC271BI UNITA
MIN TYP MAX
25°C 0.62
VI(PP) = 1 V –40°C 0.77
SR Slew rate at unity gainRL = 100 kΩ,CL = 20 pF
( )85°C 0.47
V/µsSR Slew rate at unity gain CL = 20 pF,See Figure 98 25°C 0.56
V/µsSee Figure 98
VI(PP) = 5.5 V –40°C 0.70( )85°C 0.44
Vn Equivalent input noise voltagef = 1 kHz,See Figure 99
RS = 20 Ω, 25°C 32 nV/√Hz
V V 3 C 20 F25°C 35
BOM Maximum output-swing bandwidthVO = VOH,3RL = 100 kΩ
CL = 20 pF,See Figure 98
–40°C 45 kHzRL = 100 kΩ, See Figure 98
85°C 25
V 10 V C 20 F25°C 635
B1 Unity-gain bandwidthVI = 10 mV,See Figure 100
CL = 20 pF, –40°C 880 kHzSee Figure 100
85°C 480
V 10 mV f B25°C 43°
φm Phase marginVI = 10 mV,CL = 20 pF
f = B1,See Figure 100 –40°C 46°CL = 20 F, See Figure 100
85°C 41°
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
27POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MEDIUM-BIAS MODE
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS TATLC271M
UNITPARAMETER TEST CONDITIONS TA MIN TYP MAXUNIT
25°C 0.43
VI(PP) = 1 V –55°C 0.54
SR Slew rate at unity gainRL = 100 kΩ,CL = 20 pF
( )125°C 0.29
V/µsSR Slew rate at unity gain CL = 20 pF,See Figure 98 25°C 0.40
V/µsSee Figure 98
VI(PP) = 2.5 V –55°C 0.50( )125°C 0.28
Vn Equivalent input noise voltagef = 1 kHz,See Figure 99
RS = 20 Ω, 25°C 32 nV/√Hz
V V C 20 F25°C 55
BOM Maximum output-swing bandwidthVO = VOH,RL = 100 kΩ
CL = 20 pF,See Figure 98
–55°C 80 kHzRL = 100 kΩ, See Figure 98
125°C 40
V 10 V C 20 F25°C 525
B1 Unity-gain bandwidthVI = 10 mV,See Figure 100
CL = 20 pF, –55°C 850 kHzSee Figure 100
125°C 330
V 10 mV f B25°C 40°
φm Phase marginVI = 10 mV,CL = 20 pF
f = B1,See Figure 100 –55°C 43°CL = 20 F, See Figure 100
125°C 36°
operating characteristics at specified free-air temperature, VDD = 10 V
PARAMETER TEST CONDITIONS TATLC271M
UNITPARAMETER TEST CONDITIONS TA MIN TYP MAXUNIT
25°C 0.62
VI(PP) = 1 V –55°C 0.81
SR Slew rate at unity gainRL = 100 kΩ,CL = 20 pF
( )125°C 0.38
V/µsSR Slew rate at unity gain CL = 20 pF,See Figure 98 25°C 0.56
V/µsSee Figure 98
VI(PP) = 5.5 V –55°C 0.73( )125°C 0.35
Vn Equivalent input noise voltagef = 1 kHz,See Figure 99
RS = 20 Ω, 25°C 32 nV/√Hz
V V C 20 F25°C 35
BOM Maximum output-swing bandwidthVO = VOH,RL = 100 kΩ
CL = 20 pF,See Figure 98
–55°C 50 kHzRL = 100 kΩ, See Figure 98
125°C 20
V 10 V C 20 F25°C 635
B1 Unity-gain bandwidthVI = 10 mV,See Figure 100
CL = 20 pF, –55°C 960 kHzSee Figure 100
125°C 440
V 10 mV f B25°C 43°
φm Phase marginVI = 10 mV,CL = 20 pF
f = B1,See Figure 100 –55°C 47°CL = 20 F, See Figure 100
125°C 39°
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
28 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)
Table of Graphs
FIGURE
VIO Input offset voltage Distribution 34, 35
αVIO Temperature coefficient Distribution 36, 37
vs High-level output current 38, 39VOH High-level output voltage
vs High level out ut currentvs Supply voltage
38, 3940OH g g y g
vs Free-air temperature 41
vs Common-mode input voltage 42, 43
VOL Low level output voltage
vs Common mode in ut voltagevs Differential input voltage
42, 4344VOL Low-level output voltage
gvs Free-air temperature 45vs Low-level output current 46, 47
vs Supply voltage 48AVD Large-signal differential voltage amplification
vs Su ly voltagevs Free-air temperature
4849VD g g g
vs Frequency 60, 61
IIB Input bias current vs Free-air temperature 50
IIO Input offset current vs Free-air temperature 50
VI Maximum Input voltage vs Supply voltage 51
IDD Supply currentvs Supply voltage 52
IDD Supply currenty g
vs Free-air temperature 53
SR Slew ratevs Supply voltage 54
SR Slew ratey g
vs Free-air temperature 55
Bias-select current vs Supply voltage 56
VO(PP) Maximum peak-to-peak output voltage vs Frequency 57
B1 Unity gain bandwidthvs Free-air temperature 58
B1 Unity-gain bandwidth vs Supply voltage 59
vs Supply voltage 62φm Phase margin
vs Su ly voltagevs Free-air temperature
6263φm g
vs Capacitive load 64
Vn Equivalent input noise voltage vs Frequency 65
Phase shift vs Frequency 60, 61
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
29POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
Figure 34
–50
Per
cen
tag
e o
f U
nit
s –
%
VIO – Input Offset Voltage – mV5–4 –3 –2 –1 0 1 2 3 4
10
20
30
40
50
60
DISTRIBUTION OF TLC271INPUT OFFSET VOLTAGE
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÎÎÎÎÎÎÎÎ
VDD = 5 V
ÎÎÎÎÎÎÎÎ
TA = 25°C
ÎÎÎÎN Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
612 Amplifiers Tested From 6 Wafer Lots
Figure 35
60
50
40
30
20
10
43210–1–2–3–4 5VIO – Input Offset Voltage – mV
Per
cen
tag
e o
f U
nit
s –
%0
–5
DISTRIBUTION OF TLC271INPUT OFFSET VOLTAGE
ÎÎÎÎÎÎÎÎÎÎÎÎ612 Amplifiers Tested From 6 Wafer LotsÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÎÎÎÎÎÎÎÎ
VDD = 5 VÎÎÎÎÎÎÎÎ
TA = 25°C
ÎÎÎÎN Package
Figure 36
DISTRIBUTION OF TLC271INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT60
50
40
30
20
10
0– 10 – 8 10
αVIO – Temperature Coefficient – µV/°C
Per
cen
tag
e o
f U
nit
s –
%
– 6 – 4 – 2 0 2 4 6 8
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
224 Amplifiers Tested From 6 Water LotsÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VDD = 5 VTA = 25°C to 125°CP PackageOutliers:(1) 33.0 µV/°C
Figure 37
DISTRIBUTION OF TLC271INPUT OFFSET VOLTAGE
TEMPERATURE COEFFICIENT
20
60
50
40
30
10
0– 10 – 8 – 6 – 4 – 2 0 2 4 6 8 10
αVIO – Temperature Coefficient – µV/°C
Per
cen
tag
e o
f U
nit
s –
%
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
224 Amplifiers Tested From 6 Water LotsÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
VDD = 10 VTA = 25°C to 125°CP PackageOutliers:(1) 34.6 µV/°C
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
30 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
Figure 38
00
VO
H –
Hig
h-L
evel
Ou
tpu
t V
olt
age
– V
IOH – High-Level Output Current – mA– 10
5
– 2 – 4 – 6 – 8
1
2
3
4
TA = 25°CVID = 100 mV
VDD = 5 V
VDD = 4 V
VDD = 3 V
HIGH-LEVEL OUTPUT VOLTAGEvs
HIGH-LEVEL OUTPUT CURRENT
ÁÁÁÁÁÁ
V OH
Figure 39
00
IOH – High-Level Output Current – mA– 40
16
– 10 – 20 – 30
2
4
6
8
10
12
14
VDD = 16 V
VDD = 10 V
VID = 100 mVTA = 25°C
HIGH-LEVEL OUTPUT VOLTAGEvs
HIGH-LEVEL OUTPUT CURRENT
– 35– 25– 15– 5
VO
H –
Hig
h-L
evel
Ou
tpu
t V
olt
age
– V
ÁÁÁÁÁÁ
V OH
Figure 40
0VDD – Supply Voltage – V
162 4 6 8 10 12 14
14
12
10
8
6
4
2
16
0
VID = 100 mVRL = 10 kΩTA = 25°C
HIGH-LEVEL OUTPUT VOLTAGEvs
SUPPLY VOLTAGE
VO
H –
Hig
h-L
evel
Ou
tpu
t V
olt
age
– V
ÁÁÁÁÁÁÁÁÁ
V OH
Figure 41
– 1.7
– 1.8
– 1.9
– 2
– 2.1
– 2.2
– 2.3
1007550200– 25– 50
VDD – 1.6
125TA – Free-Air Temperature – °C
– 2.4– 75
IOH = –5 mAVID = 100 mA
VDD = 5 V
VDD = 10 V
HIGH-LEVEL OUTPUT VOLTAGEvs
FREE-AIR TEMPERATURE
VO
H –
Hig
h-L
evel
Ou
tpu
t V
olt
age
– V
ÁÁÁÁ
V OH
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
31POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
Figure 42
0300
VIC – Common-Mode Input Voltage – V4
700
1 2 3
400
500
600
TA = 25°CIOL = 5 mAVDD = 5 V
LOW-LEVEL OUTPUT VOLTAGEvs
COMMON-MODE INPUT VOLTAGE
650
550
450
350VO
L –
Lo
w-L
evel
Ou
tpu
t V
olt
age
– m
V
ÁÁÁÁ
VO
L
ÎÎÎÎVID = –1 V
ÎÎÎÎÎÎÎÎÎÎÎÎ
VID = –100 mV
Figure 43
2500
VIC – Common-Mode Input Voltage – V
300
350
400
450
500
2 4 6 8 10
VDD = 10 VIOL= 5 mA
TA = 25°C
VID = –1 V
VID = –2.5 V
VID = –100 mV
LOW-LEVEL OUTPUT VOLTAGEvs
COMMON-MODE INPUT VOLTAGE
VO
L –
Lo
w-L
evel
Ou
tpu
t V
olt
age
– m
V
ÁÁÁÁÁÁ
VO
L97531
Figure 44
0VID – Differential Input Voltage – V
– 10– 2 – 4 – 6 – 8
800
700
600
500
400
300
200
100
0
VDD = 5 V
VDD = 10 V
LOW-LEVEL OUTPUT VOLTAGEvs
DIFFERENTIAL INPUT VOLTAGE
VO
L –
Lo
w-L
evel
Ou
tpu
t V
olt
age
– m
V
ÁÁÁÁV
OL
– 1 – 3 – 5 – 7 – 9
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
IOL = 5 mAVIC = |VID/2|TA = 25°C
Figure 45
– 750
TA – Free-Air Temperature – °C125
900
– 50 – 25 0 25 50 75 100
100
200
300
400
500
600
700
800VIC = 0.5 VVID = –1 VIOL = 5 mA
VDD = 5 V
VDD = 10 V
LOW-LEVEL OUTPUT VOLTAGEvs
FREE-AIR TEMPERATURE
VO
L –
Lo
w-L
evel
Ou
tpu
t V
olt
age
– m
V
ÁÁÁÁÁÁV
OL
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
32 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
Figure 46
0IOL – Low-Level Output Current – mA
1
80
1 2 3 4 5 6 7
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VID = –1 VVIC = 0.5 VTA = 25°C
VDD = 3 V
VDD = 4 V
VDD = 5 V
LOW-LEVEL OUTPUT VOLTAGEvs
LOW-LEVEL OUTPUT CURRENT
VO
L –
Lo
w-L
evel
Ou
tpu
t V
olt
age
– V
ÁÁÁÁÁÁ
VO
L
Figure 47
0IOL – Low-Level Output Current – mA
3
300
5 10 15 20 25
0.5
1
1.5
2
2.5 TA = 25°CVIC = 0.5 VVID = –1 V
LOW-LEVEL OUTPUT VOLTAGEvs
LOW-LEVEL OUTPUT CURRENT
VO
L –
Lo
w-L
evel
Ou
tpu
t V
olt
age
– V
ÁÁÁÁ
VO
L
ÎÎÎÎÎÎÎÎ
VDD = 16 V
ÎÎÎÎÎÎÎÎ
VDD = 10 V
Figure 48
0VDD – Supply Voltage – V
500
160
2 4 6 8 10 12 14
50
100
150
200
250
300
350
400
450TA = –55°C
–40°C
0°C
25°C
70°C
85°C
LARGE-SIGNALDIFFERENTIAL VOLTAGE AMPLIFICATION
vsSUPPLY VOLTAGE
ÎÎÎÎTA = 125°C
ÎÎÎÎÎÎÎÎÎÎ
RL = 100 kΩ
AV
D –
Lar
ge-
Sig
nal
Dif
fere
nti
al
ÁÁÁÁÁÁ
AV
DV
olt
age
Am
plif
icat
ion
– V
/mV
Figure 49
LARGE-SIGNALDIFFERENTIAL VOLTAGE AMPLIFICATION
vsFREE-AIR TEMPERATURE
450
400
350
300
250
200
150
100
50
1007550250–25–500
125
500
TA – Free-Air Temperature – °C–75
ÎÎÎÎÎÎÎÎÎÎ
VDD = 5 V
ÎÎÎÎÎÎÎÎÎÎ
VDD = 10 V
ÎÎÎÎÎÎÎÎÎÎ
RL = 100 kΩ
AV
D –
Lar
ge-
Sig
nal
Dif
fere
nti
al
ÁÁÁÁÁÁ
AV
DV
olt
age
Am
plif
icat
ion
– V
/mV
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
33POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
Figure 50
0.1125
10000
45 65 85 105
1
10
100
1000
25
TA – Free-Air Temperature – °C
INPUT BIAS CURRENT AND INPUT OFFSETCURRENT
vsFREE-AIR TEMPERATURE
11595755535
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VDD = 10 VVIC = 5 VSee Note A
ÎÎIIB
ÎÎÎÎÎÎ
IIO
IIB a
nd
IIO
– In
pu
t B
ias
and
IBII I
OIn
pu
t O
ffse
t C
urr
ents
– p
A
NOTE A: The typical values of input bias current and input offsetcurrent below 5 pA were determined mathematically.
Figure 51
MAXIMUM INPUT VOLTAGEvs
SUPPLY VOLTAGE
0
VDD – Supply Voltage – V
16
160
2 4 6 8 10 12 14
2
4
6
8
10
12
14ÎÎÎÎTA = 25°C
VI –
Max
imu
m In
pu
t V
olt
age
– V
VI
Figure 52
IDD
– S
up
ply
Cu
rren
t –
mA
VDD – Supply Voltage – V
VO = VDD/2No Load TA = –55°C
0°C
25°C
70°C
125°C
0
400
160
2 4 6 8 10 12 14
50
100
150
200
250
300
350
–40°C
SUPPLY CURRENTvs
SUPPLY VOLTAGE
ÁÁÁÁÁÁ
I DD
Figure 53
–75TA – Free-Air Temperature – °C
250
1250
–50 –25 0 25 50 75 100
25
50
75
100
125
150
175
200
225
SUPPLY CURRENTvs
FREE-AIR TEMPERATURE
IDD
– S
up
ply
Cu
rren
t –
mA
ÁÁÁÁ
I DD
ÁÁÁÁÁÁÁÁÁÁ
No LoadVO = VDD/2
ÎÎÎÎÎÎÎÎÎÎ
VDD = 10 V
ÎÎÎÎÎÎÎÎ
VDD = 5 V
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
34 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
Figure 54
0
SR
– S
lew
Rat
e –
V/
VDD – Supply Voltage – V
0.9
160.3
2 4 6 8 10 12 14
0.4
0.5
0.6
0.7
0.8
SLEW RATEvs
SUPPLY VOLTAGE
sµ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
CL = 20 pFRL = 100 kΩVI(PP) = 1 VAV = 1
See Figure 99TA = 25°C
Figure 55
–75TA – Free-Air Temperature – °C
0.9
1250.2
–50 –25 0 25 50 75 100
0.3
0.4
0.5
0.6
0.7
0.8
SLEW RATEvs
FREE-AIR TEMPERATURE
ÁÁÁÁÁÁÁÁÁÁÁÁ
RL = 10 kΩAV = 1
See Figure 99CL = 20 pF
SR
– S
lew
Rat
e –
V/
sµ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VI(PP) = 5.5 VVDD = 10 V
ÁÁÁÁÁÁÁÁÁÁÎÎÎÎÎÎÎÎÎÎÎÎ
VDD = 10 VVI(PP) = 1 V
ÁÁÁÁÁÁÁÁÁÁÎÎÎÎÎVDD = 5 V
VI(PP) = 2.5 V
ÁÁÁÁÁÁÁÁÎÎÎÎÎ
VI(PP) = 1 VVDD = 5 V
Figure 56
0
Bia
s-S
elec
t C
urr
ent
– n
A
VDD – Supply Voltage – V
–300
160
2 4 6 8 10 12 14
–30
–60
–90
–120
–150
–180
–210
–240
–270
BIAS-SELECT CURRENTvs
SUPPLY VOLTAGE
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VI(SEL) = 1/2 VDD
TA = 25°C
Figure 57
1f – Frequency – kHz
10
10000
1
2
3
4
5
6
7
8
9
10 100
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs
FREQUENCY
ÁÁÁÁÁÁÁÁ
RL = 100 kΩSee Figure 99
ÎÎÎÎÎÎÎÎ
VDD = 10 V
ÎÎÎÎÎÎÎÎ
VDD = 5 V
ÁÁÁÁÁÁÁÁÁÁÁÁ
TA = –55°CTA = 25°CTA = 125°C
– M
axim
um
Pea
k-to
-Pea
k O
utp
ut
Vo
ltag
e –
VV O
(PP
)
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
35POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
Figure 58
800
700
600
500
400
1007550250–25–50300
125
900
TA – Free-Air Temperature – °C
B1
– U
nit
y-G
ain
Ban
dw
idth
– M
Hz
–75
UNITY-GAIN BANDWIDTHvs
FREE-AIR TEMPERATURE
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
See Figure 101CL = 20 pFVI = 10 mVVDD = 5 V
B1
Figure 59
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
UNITY-GAIN BANDWIDTHvs
SUPPLY VOLTAGE
750
700
650
600
550
500
450
1412108642400
16
800
VDD – Supply Voltage – V0
VI = 10 mVCL = 20 pFTA = 25°CSee Figure 101
B1
– U
nit
y-G
ain
Ban
dw
idth
– M
Hz
B1
Phase Shift
Ph
ase
Sh
ift
180°
0°
30°
60°
90°
120°
150°
106
105
104
103
102
101
1
100 K101 k100100.1
1 Mf – Frequency – Hz
1
LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT
vsFREQUENCY
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
VDD = 5 VRL = 100 kΩTA = 25°C
107
ÎÎÎÎÎÎ
AVD
AV
D –
Lar
ge-
Sig
nal
Dif
fere
nti
al
ÁÁÁÁÁÁ
AV
DV
olt
age
Am
plif
icat
ion
Figure 60
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
36 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
1f – Frequency – Hz
1 M0.1
10 100 1 k 10 k 100 k
1
101
102
103
104
105
106
150°
120°
90°
60°
30°
0°
180°
Ph
ase
Sh
ift
ÎÎÎÎAVD
Phase Shift
LARGE-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT
vsFREQUENCY
107 ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
TA = 25°CRL = 100 kΩÎÎÎÎÎVDD = 10 V
AV
D –
Lar
ge-
Sig
nal
Dif
fere
nti
al
ÁÁÁÁÁÁ
AV
DV
olt
age
Am
plif
icat
ion
Figure 61
Figure 62
038°
m –
Ph
ase
Mar
gin
VDD – Supply Voltage – V16
50°
2 4 6 8 10 12 14
40°
42°
44°
46°
48°See Figure 100TA = 25°CCL = 20 pFVI = 10 mV
PHASE MARGINvs
SUPPLY VOLTAGE
ÁÁÁÁÁÁ
mφ
Figure 63
–7535°
TA – Free-Air Temperature – °C125
45°
–50 –25 0 25 50 75 100
37°
39°
41°
43°
VDD = 5 VVI = 10 mVCL = 20 pFSee Figure 100
PHASE MARGINvs
FREE-AIR TEMPERATURE
m –
Ph
ase
Mar
gin
ÁÁÁÁÁÁ
mφ
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
37POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS (MEDIUM-BIAS MODE)†
Figure 64
028°
CL – Capacitive Load – pF100
44°
20 40 60 80
30°
32°
34°
36°
38°
40°
42°VDD = 5 VVI = 10 mVTA = 25°CSee Figure 100
PHASE MARGINvs
CAPACITIVE LOAD
m –
Ph
ase
Mar
gin
ÁÁÁÁ
mφ
Figure 65
10
Vn
– E
qu
ival
ent
Inp
ut
No
ise
Vo
ltag
e –
nV
/Hz
f – Frequency – Hz1000
300
50
100
150
200
250
10 100
See Figure 99TA = 25°CRS = 20 ΩVDD = 5 V
EQUIVALENT INPUT NOISE VOLTAGEvs
FREQUENCY
Vn
ÁÁÁÁÁÁÁÁÁn
V/
Hz
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWEROPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
38 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
LOW-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TEST †TLC271C, TLC271AC, TLC271BC
PARAMETERTEST
CONDITIONS TA† VDD = 5 V VDD = 10 V UNITCONDITIONS A
MIN TYP MAX MIN TYP MAX
TLC271C25°C 1.1 10 1.1 10
TLC271C
VO = 1 4 VFull range 12 12
VIO Input offset voltage TLC271AC
VO = 1.4 V,VIC = 0 V, 25°C 0.9 5 0.9 5 mVVIO Input offset voltage TLC271AC IC
,RS = 50 Ω,R 1 MΩ
Full range 6.5 6.5mV
TLC271BCRI = 1 MΩ 25°C 0.24 2 0.26 2
TLC271BCFull range 3 3
αVIOAverage temperature coefficient ofinput offset voltage
25°C to 70°C 1.1 1 µV/°C
IIO Input offset current (see Note 4)VO = VDD/2, 25°C 0.1 60 0.1 60 pAIIO Input offset current (see Note 4) O DD
,VIC = VDD/2 70°C 7 300 8 300
pA
IIB Input bias current (see Note 4)VO = VDD/2, 25°C 0.6 60 0.7 60 pAIIB Input bias current (see Note 4) O DD
,VIC = VDD/2 70°C 40 600 50 600
pA
VICRCommon-mode input
25°C–0.2
to4
–0.3to
4.2
–0.2to9
–0.3to
9.2V
VICR voltage range (see Note 5)
Full range–0.2
to3.5
–0.2to
8.5V
V 100 V25°C 3.2 4.1 8 8.9
VOH High-level output voltageVID = 100 mV,RL= 1 MΩ
0°C 3 4.1 7.8 8.9 VRL= 1 MΩ
70°C 3 4.2 7.8 8.9
V 100 V25°C 0 50 0 50
VOL Low-level output voltageVID = –100 mV,IOL = 0
0°C 0 50 0 50 mVIOL = 0
70°C 0 50 0 50
L i l diff ti l R 1 MΩ25°C 50 520 50 870
AVDLarge-signal differentialvoltage amplification
RL= 1 MΩ,See Note 6
0°C 50 700 50 1030 V/mVvoltage am lification See Note 6
70°C 50 380 50 660
25°C 65 94 65 97
CMRR Common-mode rejection ratio VIC = VICRmin 0°C 60 95 60 97 dB
70°C 60 95 60 97
S l lt j ti ti V 5 V t 10 V25°C 70 97 70 97
kSVRSupply-voltage rejection ratio(∆VDD/∆VIO)
VDD = 5 V to 10 VVO = 1 4 V
0°C 60 97 60 97 dB(∆VDD/∆VIO) VO = 1.4 V
70°C 60 98 60 98
II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD 25°C 65 95 nA
VO = VDD/2,25°C 10 17 14 23
IDD Supply currentVO VDD/2,VIC = VDD/2,N l d
0°C 12 21 18 33 µANo load 70°C 8 14 11 20
† Full range is 0°C to 70°C.NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
-
TLC271, TLC271A, TLC271BLinCMOS PROGRAMMABLE LOW-POWER
OPERATIONAL AMPLIFIERSSLOS090D – NOVEMBER 1987 – REVISED MARCH 2001
39POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
LOW-BIAS MODE
electrical characteristics at specified free-air temperature (unless otherwise noted)
TEST †TLC271I, TLC271AI, TLC271BI
PARAMETERTEST
CONDITIONS TA† VDD = 5 V VDD = 10 V UNITCONDITIONS A
MIN TYP MAX MIN TYP MAX
TLC271I25°C 1.1 10 1.1 10
TLC271I
VO = 1 4 VFull range 13 13
VIO Input offset voltage TLC271AI
VO = 1.4 V,VIC = 0 V, 25°C 0.9 5 0.9 5 mVVIO Input offset voltage TLC271AI IC
,RS = 50 Ω,R 1 MΩ
Fu
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