SINTEF Wafers
• We studied two wafers. Wafer #24 and one oxygenated wafer.
PSIDevices Purdue Devices
Diode cluster
JHU Devices JHU Devices
BTev Devices
N+ side
Measurement
A
•We measure the total leakage current.
N
N+
P+
Wafer #24
• IV measurement on wafer 24 is complete. We are now going to wire bond it to study single pixel characteristics.
• Except Pixel 1, AI has high breakdown.
•Pixel 4 - design F , Pixel 5 - design G•Design F and G also have high breakdown voltage.
•Vbreakdown < 300 - 7 pixel arrays.• 300 < Vbreakdown < 500 - 20 pixel arrays•500 < Vbreakdown - 7 pixel arrays
•Current per unit area at 270 V - 3-6 nA/cm^2
Performance
SINTEF Oxygenated Wafer
• We measured 15 pixel arrays, Purdue and PSI designs, on the oxygenated wafer.
•Breakdown voltage is low
• Except Pixel 6, breakdown is around 250 voltage.
•Vbreakdown < 200 - 4 pixel arrays.• 200 < Vbreakdown < 250 - 10 pixel arrays•250 < Vbreakdown - 1 pixel array
•Current per unit area at 270 V - 11 nA/cm^2(Data for pixel 6 only. For all other pixel arraysVbreakdown < 250)
Performance