method for preferential growth of semiconducting verticall
Post on 02-Dec-2021
3 Views
Preview:
TRANSCRIPT
University of Dayton Office of Technology Partnerships
937.229.3469
Method For Preferential Growth Of Semiconducting Verticall Y Aligned Single Walled Carbon Nanotubes Case #: UD-500
US Patent Serial #: 12/511,517
Inventor: Liming Dai, et. al.
Overview: Carbon nanotubes can be conceptually viewed as a grapheme sheet rulled up into a nanoscale
tube form to produce the single-walled carbon nanotubes (SWNTs). There may be additional
graphene tubes around the core of a SWNT to form multiwallcd carbon nanotubes (MWNTs).
Depending on their diameter and helicity of the arrangement of carbon atoms in the nanotube
top related