measurements of csi(tl) crystals with pmt and apd jean peyré milano - oct 2006
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Milano - October 2006IPNO-RDD-Jean Peyré 1
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Measurements of CsI(Tl) Crystals
with PMT and APD
Jean PeyréMilano - Oct 2006
Milano - October 2006IPNO-RDD-Jean Peyré 2
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1.Characteristics of CsI(Tl), PMT and APD2.Measurements on CsI(Tl)
a) CsI(Tl) /Teflon + XP5300B 137Cs
b) CsI(Tl) /VM2000 + XP5300B 137Cs
c) CsI(Tl) + XP1912 137Cs
d) CsI(Tl) + APD S8664-1010 137Cs
e) CsI(Tl) + APD S8664-1010 137Cs+56Co+60Co
f) CsI(Tl) + XP1912 137Cs+56Co+60Co
3.Conclusions
Milano - October 2006IPNO-RDD-Jean Peyré 3
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1.Characteristics of CsI(Tl), PMT and APD2.Measurements on CsI(Tl)
a) CsI(Tl) /Teflon + XP5300B 137Cs
b) CsI(Tl) /VM2000 + XP5300B 137Cs
c) CsI(Tl) + XP1912 137Cs
d) CsI(Tl) + APD S8664-1010 137Cs
e) CsI(Tl) + APD S8664-1010 137Cs+56Co+60Co
f) CsI(Tl) + XP1912 137Cs+56Co+60Co
3.Conclusions
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What we have got
CsI(Tl) Crystals APD S8664-1010
PMT
• 4 CsI(Tl) crystals from Saint-Gobain • PM tubes from Photonis (XP1912 and
XP5300B)• APD from Panda APD S8664-1010
(Hamamatsu)
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CsI(Tl) Crystals
• 4 Sizes: 22x22x22 mm3, 22x22x220 mm3, 44x22x200 mm3, 66x22x200 mm3, wrapped with Teflon polished only on exit face, rough on others.
CsI(Tl) Crystals
22x22x22mm3
22x22x220mm3
44x22x200mm3
66x22x200mm3
Milano - October 2006IPNO-RDD-Jean Peyré 7
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rTypical emission spectra of
CsI(Tl)
• Light yield (54 000 photons / MeV)
Max emission= 550nm
Milano - October 2006IPNO-RDD-Jean Peyré 10
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Photonis PMT
• XP1912 Ø 19 mm (Active area 176mm2), bialkaly• XP5300B Ø 76 mm, green extended bialkaly• Quantum efficiency
» XP1912 28% at 420nm, 14% at 550nm» XP5300B 34% at 420nm, 24% at 550nm
XP5300B
XP1912
PMT:
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rTypical Spectral Characteristics
of PMT
XP5300B
XP1912
CsI(Tl)Arbitraryvertical valuefor CsI(Tl)
PMT:
~x2
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rTypical Spectral
Characteristics of Hamamatsu Panda APD
APD S8664-1010
• APD from Panda APD S8664-1010 (Hamamatsu)
• Active area
100mm2
CsI(Tl)
Arbitraryvertical valuefor CsI(Tl)
Quantum efficiency 70% at 420nm, 85% at 550nm
APD:
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rResolution you can obtain
with CsI(Tl)
With PMT:
R: global resolution RS: scintillator resolution (~4%)*
RM: Photomultiplier resolution** Nv(M)1
2.35RM
v(M): variance of the PMT gain (~0,1)N: Number of photoelectrons
*Ref: [1], [3], [4], [5],**Ref: [1], [2], [3]
2M
2S
2 RRR
N phé RM pmt RS scint R
900 8,62% 4,00% 9,50%
950 8,39% 4,00% 9,29%
1000 8,17% 4,00% 9,10%
2000 5,78% 4,00% 7,03%
3000 4,72% 4,00% 6,19%
4000 4,09% 4,00% 5,72%
5000 3,66% 4,00% 5,42%
6000 3,34% 4,00% 5,21%
Milano - October 2006IPNO-RDD-Jean Peyré 15
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rResolution you can obtain
with CsI(Tl)
22
h-eoisenh-e2S
2 /NΔN/NΔRR R: global resolution* ΔN/Ne-h: statistical fluctuation of the APD gain
Δnoise/Ne-h : Noise contribution (dark noise)
h-eh-e F/N2.35N/NΔ
F: excess noise factor Ne-h: Number of primary electron-
hole pairs
h-eoisenh-eoisen /N2.35/NΔ
With APD:
*Ref: [4]
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rResolution you can obtain
with CsI(Tl)
With APD:
For F=2 and noise 40 e-RMS (shaping time 3uS):
N (é-h) Fluc Gain Noise RS scint R
1000 10,51% 9,40% 4,00% 14,66%
2000 7,43% 4,70% 4,00% 9,66%
3000 6,07% 3,13% 4,00% 7,91%
4000 5,25% 2,35% 4,00% 7,01%
6000 4,29% 1,57% 4,00% 6,07%
8000 3,72% 1,18% 4,00% 5,58%
10000 3,32% 0,94% 4,00% 5,28%
12000 3,03% 0,78% 4,00% 5,08%
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1.Characteristics of CsI(Tl), PMT and APD2.Measurements on CsI(Tl)
a) CsI(Tl) /Teflon + XP5300B 137Cs
b) CsI(Tl) /VM2000 + XP5300B 137Cs
c) CsI(Tl) + XP1912 137Cs
d) CsI(Tl) + APD S8664-1010 137Cs
e) CsI(Tl) + APD S8664-1010 137Cs+56Co+60Co
f) CsI(Tl) + XP1912 137Cs+56Co+60Co
3.Conclusions
Characterisation of CsI(Tl)
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Experimental setup
Lead collimator
Source
Crystal
Photomultiplier
Wooden black box
Translation of source
Source
Lead collimator
XP5300B
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Experimental setup
PhotomultiplierXP5300B
Crystal wrapped with Teflon
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Experimental setup
γ rays
Light emissionCharge preamplifier+ Shaper + ADC+ Data Acquisition on PC
PMT XP5300B has 8 stages. Charge preamplifier connected to 5th stageCf= 24 pF, Shaping time 3 μs
Cf
XP5300B
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r137Cs peak at 662 keV
137Cs peak
Compton Edge
0,662 MeV
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Results CsI(Tl)+Teflon+XP5300B+137Cs
•RS=5,5%±0,2 except for crystal 22x22x220: RS~7%•Global Resolution is quite constant along the Crystal•Variation from 14% to 38% of collected light along the Crystal
3000
3500
4000
4500
5000
5500
6000
6500
7000
0 20 40 60 80 100 120 140 160 180 200
Position (mm) of Gamma source along the Xtal
Co
llec
ted
Lig
ht
(ph
e-)
by
XP
5300
B
Xtal 22x22x22 teflon
Xtal 22x22x220 teflon
Xtal 44x22x200 teflon
Xtal 66x22x200 teflon
TEFLON
6,55%
6,52%
8,18%
6,68%
ResolutionFWHM Collected light for 137Cs peak
VS position of impact
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1.Characteristics of CsI(Tl), PMT and APD2.Measurements on CsI(Tl)
a) CsI(Tl) /Teflon + XP5300B 137Cs
b) CsI(Tl) /VM2000 + XP5300B 137Cs
c) CsI(Tl) + XP1912 137Cs
d) CsI(Tl) + APD S8664-1010 137Cs
e) CsI(Tl) + APD S8664-1010 137Cs+56Co+60Co
f) CsI(Tl) + XP1912 137Cs+56Co+60Co
3.Conclusions
Characterisation of CsI(Tl)
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Experimental setup
Crystal wrapped with VM2000
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rResults CsI(Tl)
+VM2000+XP5300B+137Cs
•RS=4,7%±0,1 for cube and 44x22x200, RS=5,6%±0,1for 22x22x220 & 66x22x200 •Global Resolution is quite constant along the Crystal•Variation from 7% to 20% of collected light along the Crystal
3000
3500
4000
4500
5000
5500
6000
6500
7000
0 20 40 60 80 100 120 140 160 180 200
Position (mm) of Gamma source along the Xtal
Co
llec
ted
Lig
ht
(ph
oto
elec
tro
ns)
by
XP
5300
B
Xtal 22x22x22 VM2000
Xtal 22x22x220 VM2000
Xtal 44x22x200 VM2000
Xtal 66x22x200 VM2000
VM2000 5,74%
5,86%6,70%
6,57%
Collected light for 137Cs peak VS
position of impact
ResolutionFWHM
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rResults CsI(Tl)
+XP5300B+137Cs
3000
3500
4000
4500
5000
5500
6000
6500
7000
0 20 40 60 80 100 120 140 160 180 200
Position (mm) of Gamma source along the Xtal
Co
llec
ted
Lig
ht
(ph
oto
elec
tro
ns)
by
XP
5300
B
Xtal 22x22x22 teflonXtal 22x22x220 teflonXtal 44x22x200 teflonXtal 66x22x200 teflonXtal 22x22x22 VM2000Xtal 22x22x220 VM2000Xtal 44x22x200 VM2000Xtal 66x22x200 VM2000
TEFLON down
6,55%
6,52%
8,18%
6,68%
VM2000 up5,74%
5,86%6,70%
6,57%
•VM2000 chosen for all next tests•Problem with 22x22x22O CsI(Tl) crystal
Collected light for 137Cs peak VS
position of impact
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1.Characteristics of CsI(Tl), PMT and APD2.Measurements on CsI(Tl)
a) CsI(Tl) /Teflon + XP5300B 137Cs
b) CsI(Tl) /VM2000 + XP5300B 137Cs
c) CsI(Tl) + XP1912 137Cs
d) CsI(Tl) + APD S8664-1010 137Cs
e) CsI(Tl) + APD S8664-1010 137Cs+56Co+60Co
f) CsI(Tl) + XP1912 137Cs+56Co+60Co
3.Conclusions
Tests with small light detectors
Milano - October 2006IPNO-RDD-Jean Peyré 29
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Experimental setup
Crystal wrapped with VM2000
Output face closed and adapted to XP1912
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rResults CsI(Tl)
+VM2000+XP1912+137Cs
•RS=5%±0,1 for cube•Variation from 7% to 14% of collected light along the Crystal•Resolution is quite constant along the Crystal
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0 20 40 60 80 100 120 140 160 180 200
Position (mm) of Gamma source along the Xtal
Co
llec
ted
Lig
ht
(ph
oto
elec
tro
ns)
Xtal 22x22x22 closed XP1912
Xtal 22x22x220 closed XP1912
Xtal 44x22x200 closed XP1912
Xtal 66x22x200 closed XP1912
VM2000
XP1912
8,05%
10,33%
9,40%
12,28%
Collected light for 137Cs peak VS
position of impact
ResolutionFWHM
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0
1000
2000
3000
4000
5000
6000
7000
8000
0 20 40 60 80 100 120 140 160 180 200
Position (mm) of Gamma source along the Xtal
Co
llec
ted
Lig
ht
(ph
oto
elec
tro
ns)
Xtal 22x22x22 XP5300
Xtal 22x22x220 XP5300
Xtal 44x22x200 XP5300
Xtal 66x22x200 XP5300
Xtal 22x22x22 closed XP1912
Xtal 22x22x220 closed XP1912
Xtal 44x22x200 closed XP1912
Xtal 66x22x200 closed XP1912
XP5300B
XP1912
5,74%5,86%
8,05%
10,33%
6,70%
9,40% 12,28%
VM2000
6,57%
Results for PMT/VM2000+137Cs
Collected light for 137Cs peak VS
position of impact
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1.Characteristics of CsI(Tl), PMT and APD2.Measurements on CsI(Tl)
a) CsI(Tl) /Teflon + XP5300B 137Cs
b) CsI(Tl) /VM2000 + XP5300B 137Cs
c) CsI(Tl) + XP1912 137Cs
d) CsI(Tl) + APD S8664-1010 137Cs
e) CsI(Tl) + APD S8664-1010 137Cs+56Co+60Co
f) CsI(Tl) + XP1912 137Cs+56Co+60Co
3.Conclusions
Tests with small light detectors
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Experimental setup
γ rays
Light emission
Charge preamplifier+ Shaper + ADC+ Data Acquisition on PC
APD used at Gain 50 and 380V. Cf= 0,5 pF, Shaping time 3 μs
Cf
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Results CsI(Tl)+VM2000+APD+137Cs
0
500
1000
1500
2000
2500
3000
3500
4000
0,00 20,00 40,00 60,00 80,00 100,00 120,00 140,00 160,00 180,00 200,00
Position (mm) of Gamma source along the Xtal
Co
llec
ted
Lig
ht
(ele
ctro
n-h
ole
s)
Xtal 22x22x22 APD
Xtal 22x22x220 APD
VM2000 8,23%
9,39%
•RS=4,5%±0,1 •Global Resolution is quite constant along the Crystal except close to the APD
Collected light for 137Cs peak VS
position of impact
ResolutionFWHM
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rResolutions CsI(Tl)
+VM2000+APD/PMT+137Cs
5,74%
8,05%
8,23% 9,39%
6,70%
9,40% 10,33%
5,86% 6,57%
12,28%
22x22x22 22x22x220 44x22x200 66x22x200
XP
5300B
XP
1912
AP
D S
8664-1
010
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1.Characteristics of CsI(Tl), PMT and APD2.Measurements on CsI(Tl)
a) CsI(Tl) /Teflon + XP5300B 137Cs
b) CsI(Tl) /VM2000 + XP5300B 137Cs
c) CsI(Tl) + XP1912 137Cs
d) CsI(Tl) + APD S8664-1010 137Cs
e) CsI(Tl) + XP1912 137Cs+56Co+60Co
f) CsI(Tl) + APD S8664-1010 137Cs+56Co+60Co
3.Conclusions
Tests with small light detectors
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r60Co peaks
60Co peaks
1.17 MeV
1.33 MeV
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r56Co peaks
56Co peaks0,85 MeV
1.24 MeV
2,59 MeV
3,25 MeV
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rResolutions CsI(Tl)
+VM2000+XP1912+137Cs+60Co+56Co
0
1000
2000
3000
4000
5000
6000
0 50 100 150 200
Position (mm) of Gamma source along the Xtal
Co
llec
ted
Lig
ht
(ph
oto
ele
ctr
on
s)
9,40%
60Co 1,33MeV
137Cs 0,66MeV
56Co 3,25MeV
6,45%
4,90%
Collected light for 137Cs, 60Co, 56Co peaks VS position of impact
(5,35%)
(6,71%)
(9,29%)
Rscint =4%
calculated
measured
ResolutionFWHM
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0
2000
4000
6000
8000
10000
12000
14000
0 50 100 150 200
Position (mm) of Gamma source along the Xtal
Co
llect
ed L
igh
t (e
lect
ron
-ho
les)
5,84%
9,39%
60Co 1,33MeV
137Cs 0,66MeV
56Co 3,25MeV
4,64%
Results CsI(Tl)+VM2000+APD+137Cs+60Co+56Co
Collected light for 137Cs, 60Co, 56Co peaks VS position of impact
(9,00%)
(6,82%)
(5,13%)
Rscint =4%
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1.Characteristics of CsI(Tl), PMT and APD2.Measurements on CsI(Tl)
a) CsI(Tl) /Teflon + XP5300B 137Cs
b) CsI(Tl) /VM2000 + XP5300B 137Cs
c) CsI(Tl) + XP1912 137Cs
d) CsI(Tl) + APD S8664-1010 137Cs
e) CsI(Tl) + XP1912 137Cs+56Co+60Co
f) CsI(Tl) + APD S8664-1010 137Cs+56Co+60Co
3.Conclusions
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XP1452
• XP1452 38 mm (Active area 4x272mm2), green extended bialkaly
• Quantum efficiency 34% at 420nm, 24% at 550nm• Size from 35mm to 50mm
Use of XP1452 foreseen
Next tests with XP1452
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Conclusions
Photodetector
Area photok
Area photok/Area Xtal
Quantum Efficiency
Global Efficiency
@0.66Mev
@1.33Mev
@3.25Mev
Cost
XP5300B
>484 mm2
100% 24% 24% 5.54%
4.83%
4.36%
Testonly
XP1912 176 mm2
36% 14% 5% 9.25%
7.11%
5.49%
120€
XP145238x38
272 mm2
56% 20% 11% 6.89%
5.62%
4.73%
350/2€
XP145244x44
380 mm2
79% 20% 16% 6.21%
5.21%
4.54%
350/2€
APD 100 mm2
21% 85% 17% 9.00%
6.64%
5.15%
150€
Calculated ResolutionsXtal 22x22x220 @550nm
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Conclusions
1. Collected light through long crystals is not constant. Tests with non collimated 137Cs source give resolutions greater that 15%.
2. The choice of VM2000 seems obvious3. With XP1912, it seems difficult to have a resolution
better than 9%-10% at 662keV on long crystals because:a. Area covered by PMT is only 36% with 22x22
output faceb. Intrinsic resolution of crystal is quite high
(~4/5%)c. Photocathode is not green extended bialkaly
4. Resolution obtained with PMT XP1912 and APD are quite comparable until 3.25MeV
5. No work has been done on surface quality (polished/rough)
6. Use of XP1452 seems promising7. Tests on LaCl3 crystal
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Many Thanks to all participants
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