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Kondensaattoriesitys - RISS
Ostrobotnia 17092014
Kimmo Saarinen
One world. One KEMET.
RISS esitelmä
One world. One KEMET.
Esityksen sisältö
• Mikä on kondensaattori
• Evoxin historiaa
• Merkittävimmät
kondensaattoriteknologiat
• Kondensaattorimarkkinat
Mikä on kondensaattori?
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What is a Capacitor
• A CAPACITOR is a passive electronic component consisting
of a pair of conductors separated by a dielectric. When a
voltage potential difference exists between the conductors,
an electric field is present in the dielectric. This field stores
energy and produces a mechanical force between the
plates.
5
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All capacitors utilize the same basic mechanism in their structure
Electrode Plates Dielectric
The value of a capacitor is measured in farads. For 1 farad of
capacitance, 1 coulomb of charge is stored on the plates, when 1 volt of
force is applied.
1 farad = 1 coulomb / 1 volt
1 coulomb represents ~ 6 x 1019 electrons
Common Structure
6
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An electronics component that
- stores electrical charges
- conducts alternating current
- separates different voltage levels, i.e. does not conduct direct current
C = K A/d x 8.85x 10-12
F
Where C = Capacitance expressed in Farads
− K = Dielectric constant
− A = Area of the Electrodes in square meters
− d = Distance between the electrode in meters
− 8.85x10-12
= Absolute permittivity of vacuum
CAPACITOR
7
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Capacitor Classification
• Electrostatic capacitors have a symmetrical structure.
• Two electrodes are of similar material separated by one dielectric
• Non-Polarized
• Electrolytic capacitors have a non-symmetrical structure.
• Metal anode on which the oxide of that metal is formed to act as dielectric layer.
• Electrolyte is used as the “de facto”cathode of the capacitor
• Polarized
8
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Theoretical capacitor symbol
LS ESR
IR
C
REAL CAPACITOR equivalent circuit Z
frequency
Real capacitor
Theoretical capacitor
Z = Impedance
LS = Total series L due to the armature (film) or electrodes (MLCC) and the leads of the capacitor
ESR = Total series resistance due to armature (film) or electrodes (MLCC), to the leads and to the connection
IR = Insulation resistance
C = Capacitance
LS = LL + LW LL = Inductance of the leads ; LW = Inductance of winding (film) or electrodes (MLCC)
ESR = RL + RC + RW RL = Res. of leads ; RC = Res. of contacts ; RW = Res. of winding or electrodes
QUALITY OF CAPACITORS THEORETICAL
IR Infinite
LS zero
ESR zero
The “RLC” Circuit
C ESR ESL 9
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ESL - Inductive Reactance (XL) opposes Capacitive Reactance
X Z
ESR
XC
XL
X
0 Impedance is a
factor of vector
summation.
)(2 HenriesfLX L
Vectors R, XL, XC, Z
22RXXZ LC
)()(2
1
FaradsCHertzfXC
10
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RLC Frequency Response
self-resonant frequency.
1,E-03
1,E-02
1,E-01
1,E+00
1,E+01
1,E+02
1,E+03
1,E+04
1,E+05
1,E-01 1,E+00 1,E+01 1,E+02 1,E+03 1,E+04 1,E+05 1,E+06 1,E+07 1,E+08
Imp
ed
an
ce (
Oh
ms)
Frequency (kHz)
Impedance vs. Freq. 47 µF Capacitance with 2.5 nH ESL
0.25 Ohms ESR
0.10 Ohms ESR
0.05 Ohms ESR
0.01 Ohms ESR
0.001 Ohms ESR
LCf
2
1
11
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Impedance Across Types
Lowest impedance is not always highest capacitance
0,01
0,1
1
10
100
1000
1,E+02 1,E+03 1,E+04 1,E+05 1,E+06 1,E+07
100 µF
Aluminum
1 µF
Ceramic
10 µF
Tantalum
12
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High Frequency or Tuned Circuit Applications
Q
Power Applications
ESR
General Applications
DF
Loss Factor vs. Application
13
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Based on Vector relationship
Where:
Theta (θ)
Z
ESR
Common Terms Define “Loss” Element
Dell (δ)
DF = cot(θ) = ESR/XC = tan(δ)
PF = cos(θ) = ESR/Z
Q = tan(θ) = XC/ESR = 1/DF
XC
DF = Dissipation Factor
PF = Power Factor
Q = “Q” or Figure of Merit
14
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Capacitance Change with Frequency
FREQUENCY
% C
ap
acita
nce
Cha
ng
e Film -2% to -5%
Ceramic 0% to -5%
Tantalum -15% to -60% ~30kHz to 300kHz
Aluminum -15% to -90% ~10kHz to 30kHz
15
Suomalainen Evox
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Lyhyt historia
• Runar Öhman perustaa Oy Evox Ab:n 1947 Virkkalassa
• Aluksi mikrofoonien ja gramofonien äänirasioiden valmistusta
ja pian myös kondensaattoreiden
• Paperi-, keraamiset putki- ja muovikondensaattorit (polystyreeni ja
polyesteri, film-foil tyyppiä), myöhemmin myös vaihesiirto ja
puhelinpakkakondensaattorit
• 1951 aloitettiin vienti
• Ruotsiin, Norjaan, Tanskaan, Brasiliaan ja Turkkiin
• 1956 uusi tehdas
• 4,5 Mkpl valmistusta
• Keskityttiin muovikalvokondensaattoreihin ja tuotantokoneisiin
• 1960-luvun alussa sopimus Nokian kondensaattoritehtaan
kanssa, että Nokia tekee vahvavirtakondensaattorit ja Evox
heikkovirtakondensaattorit
One world. One KEMET.
Lyhyt historia
• 1964 maailman ensimmäiset automaattiset
polystyreenikondensaattoreiden käämikoneet
• Perustettiin oma konepaja
• 1965 lisenssi käämikoneista myytiin Siemensille
• Mahdollisti metalloitujen polyesterikondensaattoreiden kehittämiseen (1967)
koneineen ja hieman myöhemmin oman metalloinnin ja leikkuun aloittamisen
• 1972 perustettiin tutkimus ja tuotekehityslaboratorio
• 1976 Runar Öhman eläkkeelle ja saatiin tasavallan
presidentin vientipalkinto
• 1979 aloitti Suomussalmen tehdas
• 1980 Huhtamäki yhtymä osti Evoxin
• Hieman myöhemmin fuusioitiin Huhtamäkeen-> Huhtamäki Oy Evox
• Perustettiin tehdas Meksikoon ja Singaporeen 1982 ja yhtiö
USA:an 1984
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Lyhyt historia
• 1986 Finvest Oy osti Evoxin
• -> Evox Oy
• 1988 Finvest osti LM Erikssonilta RIFA tuotemerkin ja siihen
liittyvän kondensaattoriliiketoiminnan
• Merkittävimmät lisäykset metalloidut paperi- ja Al-
elektrolyyttikondensaattorit
• 1989 Meksikon tehdas lopetettiin
• 1992 Evoxin Virkkalan tehtaan kondensaattorivalmistus
siirrettiin Ruotsiin Suomussalmelle ja Singaporeen ja
pääkonttori Kalmariin
• Toiminta jatkui Evox Rifa nimellä
• 1992 Singaporen tuotanto Batamin saarelle Indonesiaan
• 1998 pääkonttori takaisin Suomeen
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Lyhyt historia
• Vuonna 2000 Finvest jakautui neljäksi yhtiöksi, jotka kaikki
aloittivat Helsingin pörssissä
• Yhtiön nimi Evox Rifa Group Oyj
• 2005 Kalmarin tehdas suljettiin ja tuotanto siirrettiin
Suomussalmella ja Batamille
• 2007 yhtiö myytiin amerikkalaiselle KEMET Electronics Co:lle
• Pois pörssistä ja toiminta jatkui KEMET Electronics Oy:n nimellä
• Suomessa tällä hetkellä myyntikonttori Espoossa ja tehdas
Suomussalmella
Merkittävimmät kondensaattoriteknologiat
ja niiden ominaisuuksia
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EDLC
Capacitors
Fixed Variable
Electrolytic Polymer Film
+ Polar - Trimmer
Non-Polar
Glass Porcelain Paper
PME/BME Foil Metallized
wound/stacked Aluminium Tantalum
Ceramic
Capacitor Technologies
Poly MnO2 SLC Wet
Class1 Class2
Poly MnO2 Wet MLCC
Class1 Class2
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Material & Size
Relationship to Capacitance
C =e0KA
d
WLA
d
L
W
Dielectric
Material
(K)
Material K
Vacuum 1.00000
Air 1.00059
MLCC
C0G 5 - 90
X7R 3000 - 5000
Y5V 6000 - 8000
Film
PET 3.3
PEN 3.0
PP 2.2
PPS 3.0
Elect. Al2O3
8.5
Ta2O5 27.7
24
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Properties of different dielectrics Capacitance range, µF
10-6 10-4 10-2 1 102 104 106 F
Super capacitors (EDLCs)
PP polypropylene film
Ta electrolytic (MnO2 and Polymer)
Al electrolytic (wet electrolyte)
PET polyester film
PEN polyester film
PPS polyphenylenesulphide film
High stability ceramics (NPO = COG)
Medium to low stability ceramics (X7R, X5R, Y5V, Z5U)
Paper
108
Al electrolytic
(polymer)
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Properties of different dielectrics Insulation resistance, M
10-1 1 10 102 103 104 105 106 107
PP polypropylene film
Ta electrolytic (MnO2
and Polymer
Al electrolytic (wet electrolyte)
PET polyester film
PEN polyester film
PPS Polyphenylenesulphide Film
High stability ceramics (NPO/COG)
Medium stability ceramics (X7R)
Paper
Low stability ceramics (Z5U,Y5V)
Super capacitors
M
Al electrolytic
(Polymer )
One world. One KEMET.
Properties of different dielectrics Dissipation factor,
tan (1% = 10-2) at 1 kHz
0.00001 0.0001 0.001 0.01 0.1 1.0 Tanδ
PP polypropylene film
PPS polyphenylene sulphide film
High stability ceramics (NPO=COG)
PEN polyester film
PET polyester film
Paper
Medium stability ceramics (X7R)
Low stability ceramics (Z5U,Y5V)
Ta electrolytic (MnO2 and Polymer)
Aluminium electrolytic
Super capacitors
Al electrolytic (Polymer)
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•Patch Antenna
Ni Cu
Sn
Ni
PdAg or Pd Ag
Ceramic
BME
Base Metal Electrode
NME
Noble Metal Electrode
MLCC NME vs BME
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Wet Al Electrolytic Capacitor
Winding
Paper
Anode
Foil
Cathode
Foil
Paper
Tabs
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Construction of Al Electrolytic
Capacitor
Electrolyte Paper layer
Aluminium Cathode Foil
Aluminium Anode Foil
Oxide
Layer
(dielectric)
Simplified enlarged cross section
One world. One KEMET.
Etched anodic Al-foil
Purity: 99.99% aluminium
Etched micro channels: 1m, L= 30-
40m
Dielectric: Al-oxide Al2O3 , thickness
1.1nm/V, R=9
+
+
+
- - -
+ +
+ +
+
+ +
+
+ + +
+
+ +
+
- - -
- - -
- - - -
- -
- - -
- - -
- - -
+ +
+
- - -
Oxide layer
on the walls
of the etched
micro channels
Solid Aluminum
core
Oxide layer
on the walls
of the etched
micro channels
One world. One KEMET.
Dry Ta Electrolytic Capacitor
Construction
Cathode can be also of conductive polymer instead of manganese dioxide
+ - Anode Cathode
or gold
plated terminal
epoxy molding
Alloy 42 ( NiFe )/ Ta
welding
tantalum wire
PTFE washer
porous Ta anode
pellet tantalum
pentoxide
manganese dioxide
graphite silver paint
silver
adhesive
polarity mark
tin or gold
plated terminal
tin
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Tantalum / Polymer
Capacitor Structure
Ta Ta2O5
MnO2
or
Polymer
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Technology Primer: Storage Cousins
Ultracapacitors and their energy storage cousins
Electrolyte
Traditional Capacitor Ultracapacitor Battery Dielectric
A
d d
A
2
0
2
1CVW
d
AC
V
QC
• Energy storage on the electrode surface • High surface area materials
• Organic electrolyte to increase voltage
ADVANTAGES: • Rearrangement of ions – FAST
• No chemical reactions – HIGH CYCLE LIFE POWER DELIVERY DEVICE
Electroactive materials
• Energy storage in the bulk of the electrode materials
• Chemical reactions • Mass transfer between the
electrodes
ADVANTAGE: • Faradaic processes – HIGH
ENERGY ENERGY STORAGE DEVICE
HYBRID
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Technology Primer: Ragone Plot
Ultracapacitors and their energy storage cousins
Kondensaattorimarkkinat
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Maailman Kondensaattorimarkkinat,
Lukumäärä / Kondensaattoriteknologia
-
500
1 000
1 500
2 000
2 500
3 000
1980 1985 1990 1995 2000 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014e
Vo
lum
e (
Bp
cs
)
Years
World Capacitor Market in Volume (Bpcs) and Dielectric
Ceramics Aluminium Film Tantalum
One world. One KEMET.
0
5
10
15
20
25
1990 1995 2000 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014e
Va
lue
(B
US
D)
Year
World Capacitor Market in Value (BUSD) and Dielectric
Ceramics Aluminium Film Tantalum
Maailman Kondensaattorimarkkinat,
Arvo / Kondensaattoriteknologia
One world. One KEMET.
-
500
1 000
1 500
2 000
2 500
3 000
1980 1985 1990 1995 2000 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014e
Vo
lum
e (
Bp
cs
)
Years
World Capacitor Market in Volume and Market Area
EMEA Japan Americas ROW
Maailman Kondensaattorimarkkinat,
Lukumäärä / Markkina-alue
One world. One KEMET.
Maailman kondensaattorimarkkinat,
Arvo / Markkina-alue
0
5
10
15
20
25
1990 1995 2000 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014e
Va
lue
(B
US
D)
Year
World Capacitor Market in Value and Market Area
EMEA Japan Americas ROW
One world. One KEMET.
GLOBAL ELECTRONICS INDUSTRY PRODUCTIONKc212.239bes-global
1990 2000 2010 20201980
$247Bn
1982
Computer
23%
Communications
26%
Consumer
15%
Military
19%
Industrial/
Medical
13%
Automotive
4%
4.5
2.0
1.5
1.0
0.5
0
$Trn
2011
Asia 19%
China 37%
Europe 15%
Americas 23%
14.6%
29.6%
18.7%
29.7%
4.0
3.5
3.0
2.5
Japan 6%
$1,560Bn
2/3 of the industry is
based on networked
communications
Consumer
11%
Industrial/
Medical
14%
Automotive
10%
Military
8%
7.4%
2016
$2,052Bn
Consumer
9%
Industrial/
Medical
13%
Automotive
10%
Military
7%
Computer
32%
Communications
26%
Computer
32%
Communications
29%
Global Electronic Industry Production
41
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Global Consumption of EDLCs
by Market Segment
Estimated 2011 TAM: $245M Est 2015: $1.16B Est 2020: $7B
56% CAGR!
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RISS esitelmä
Kiitos kuulijoille
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