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8/8/2019 Distributed Z-Source Network Converter for Power Conditioning and Utility Interface of Renewable Energy Sources
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Distributed Z-Source Network Converter for
Power Conditioning and Utility Interface of Renewable Energy Sources
Abstract:
This project presents a novel DC-DC converter incorporating
distributed (or transmission line) Z-source network for buck (step-down) and
boost (step-up) operation of DC-DC converter. Recently, a lot of effort has
been made to utilize distributed network in power electronics circuits. In this
project, the distributed Z-source network composed of an array of inductor
and capacitor is coupled between power source and main switching devices.
The great feature about the distributed Z-source network is that unlike the
traditional V-source or I-source, it can be open and short-circuited.
Therefore, the desired buck and boost function can be achieved. A dc-dc
converter using proposed concept was built and tested. Its performances are
verified with experimental results.
In grid connected power conditioners, usually both stepping-up the
PV array voltage, and stepping-down the dc bus voltage for injection of a
sinusoidal current to the grid is required. In this project the design procedure
of Z-source converter as a single phase PV grid connected converter-inverter
is presented.
The converter has less than the conventional two stage power conditioner,
which leads to reduction of cost.
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An optimum modulation pattern for the switches is proposed, and the low
frequency ripple of the converter is modeled. The design of the converter is
verified by simulation and implementation.
The voltage-fed FB converter shown in Fig. has the following
limitations.
• The output voltage of converter is always lower than input voltage. In other
words, the input voltage has to be greater than output voltage.
•The upper and lower devices of each phase leg cannot be gated on
simultaneously either by purpose or by EMI noise. Otherwise, a shoot-
through would occur and destroy the devices. The shoot-through problem by
Electromagnetic interference (EMI) noise’s misgating-on is a major killer to
the converter’s reliability.
• Therefore, a voltage snubber (or clamp) circuit is required to limit voltage
overshoot in rectifier diodes. The added circuitry may decrease converter
efficiency and system reliability.PWM GENERATOR CIRCUIT
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PWM DRIVER CIRCUIT FOR MOSFET SWITCHES
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High and low side driver IC IR2110
Features
• Floating channel designed for bootstrap operation
• Fully operational to +500V or +600V
• Tolerant to negative transient voltage
• DV/DT immune
• Gate drive supply range from 10 to 20V
• Under voltage lockout for both channels
• 3.3V logic compatible
• Separate logic supply range from 3.3V to 20V
• Logic and power ground ±5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs
Description
The IR2110/IR2113 is high voltage, high-speed power MOSFET and IGBTdrivers with independent high and low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable rugged zed monolithic construction. Logic
inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The
output driver’s feature a high pulse current buffer stage designed for minimum driver
cross-conduction. Propagation delays are matched to simplify use in high frequency
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applications. The floating channel can be used to drive an N-channel power MOSFET or
IGBT in the high side configuration, which operates up to 500 or 600 volts.
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Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device
may occur. All voltage parameters are absolute voltages referenced to COM. The thermal
resistance and power dissipation ratings are measured under board mounted and still air
conditions.
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Recommended Operating Conditions
For proper operation the device should be used within the recommendedconditions. The VS and VSS offset ratings are tested with all supplies biased at 15V
differential.
CA3140A High performance industrial operational amplifier
4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar output. The
CA3140A and CA3140 are integrated circuit operational amplifiers that combine theadvantages of high voltage PMOS transistors with high voltage bipolar transistors on a
single monolithic chip.
The CA3140A and CA3140 Bi MOS operational amplifiers feature gate protected
MOSFET (PMOS) transistors in the input circuit to provide very high input impedance,
very low input current and high-speed performance. The CA3140A and CA3140 operate
at supply voltage from 4V to 36V (either single or dual power supply). These operational
amplifiers are internally phase compensated to achieve stable operation in unity gainfollower operation, and additionally, have access terminal for a supplementary external
capacitor if additional frequency roll-off is desired. Terminals are also provided for use in
applications requiring input /offset voltage null. The use of PMOS field effect transistors
in the input stage results in common mode input voltage capability down to 0.5V below
the negative supply terminal, an important attribute for single supply applications. The
output stage uses bipolar transistors and includes built-in protection against damage from
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load terminal short-circuiting to either supply rail or to ground. The CA3140A and
CA3140 are intended for operation at supply voltages up to 36V (±18V).
Features
MOSFET Input Stage
Very High Input Impedance
Very Low Input Current
Wide Common Mode Input Voltage Range (VlCR) - Can be
Swing 0.5V below Negative Supply Voltage Rail
Output Swing Complements Input Common Mode Range Directly Replaces Industry Type 741 in Most Applications
Applications
Ground-Referenced Single Supply Amplifiers in
Automobile and Portable Instrumentation
Sample and Hold Amplifiers
Long Duration Timers/ Multivibrators
Photocurrent Instrumentation
Peak Detectors
Active Filters
Comparators
Interface in 5V TTL Systems and Other Low
Supply Voltage Systems
All Standard Operational Amplifier Applications
Function Generators
Tone Controls
Power Supplies
Portable Instruments
Intrusion Alarm Systems
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Pin details of CA 3140E
Device specifications CA3140E
Absolute Maximum Ratings
DC Supply Voltage (Between V+ and V- Terminals) . . . . . . . . . 36V
Differential Mode Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 8V
DC Input Voltage . . . . . . . . . . . . . . . . . . . . . . (V+ +8V) To (V- -0.5V)
Input Terminal Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1mA
Output Short Circuit Duration . . . . . . . . . . . . . . Indefinite
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Temperature (Plastic Package) . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
LF347 Quad Operational Amplifier (JFET)
Features
• Low input bias current
• High input impedance
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• Wide gain bandwidth: 4 MHz
• High slew rate: 13 V/S
Description
The LF347 is a high-speed quad JFET input operational amplifier. This feature
high input impedance, wide bandwidth, high slew rate, and low input offset voltage and
bias current. LF347 may be used in circuits requiring high input impedance. High slew
rate and wide bandwidth, low input bias current.
Absolute maximum rating
GENERAL PURPOSE J-FET QUAD OPERATIONAL AMPLIFIERS
DESCRIPTION
The TL084, TL084A and TL084B are high speed J–FET input quad operational amplifiers
incorporating well matched, high voltage J–FET and bipolar transistors in a monolithic integrated
circuit. The devices feature high slew rates, low input bias and offset currents, and low offset
voltage temperature coefficient.
PIN CONNECTIONS
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1.All voltage values, except differential voltage, are with respect to the zero reference
level (ground) of the supply voltages where the zero reference level is the midpoint
between VCC + and VCC -
2. The magnitude of the input voltage must never exceed the magnitude of the supply
voltage or 15 volts, whichever is less. ±15 V
3. Differential voltages are the non-inverting input terminal with respect to the inverting
input terminal.
4. The output may be shorted to ground or to either supply. Temperature and/or supply
voltages must be limited to ensure that the dissipation rating is not exceeded
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MOSFET
N CHANNEL 500V/ 14 Amps MOSFET
Specifications
TYPICAL RDS (on) = 0.33 W
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERYLOW INTRINSIC CAPACITANCES
GATECHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the Company’s consolidated strip layout-based
MESH OVERLAY process. This technology matches and improves the performances
compared with standard parts from various sources.
APPLICATIONS
HIGH CURRENT SWITCHING
UNINTERRUPTIBLE POWER SUPPLY (UPS)
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL AND LIGHTING EQUIPMENT.
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ABSOLUTE MAXIMUM RATINGS
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