4th ilias-gw annual meeting j.p. zendri tuebingen 8-9 october 2007 materials for dual: losses at low...
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4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
Materials for Dual:
Losses at low Temperature on Si and SiC
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
Materials under investigation
Samples shape
•Silicon single crystal and bonded
•Silicon Carbide
•Cantilever beams
•DisksExperimental set-up (2-300 K)
Heater
Shacker
Capacitive and optical readout
Thermometer
DUAL requirement •T<10-8
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
Samples suspension
Recently: glued suspension
•Less invasive on the sample
• One face of the sample is free
Sapphire balls
SS spring
Sample
Glued Sapphire ball
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
Silicon
Sample: mono crystalline silicon (n type P doped) disks 4 inch in diameter 0.5 mm in thickness
0 50 100 150 200 250 300
1E-8
1E-7
1E-6
1E-5
1E-4
Loss
Ang
le
Temperature [K]
2512 Hz 1724 Hz 381 Hz
Mode Shape Frequency
381 Hz
1724 Hz
2512 Hz
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
Dissipation around 125 K
H: thickness change of the
disk center averaged over a
circular area 0.3 mm in diameter
Emode: elastic energy stored
in the mode
•Finite size of the sapphire ball
•Disc thickness change
Real nodal point suspension
The region around 125 K is dominated by clamping losses
H2/Emode proportional of the fraction of the elastic energy that couples to the holder
FEM calculation:
Opt. readout
Cap. readout
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
Dissipation mechanism T≠125K
Below 50 K
•Not evidence of clamping losses as at 125K
•Squeezed gas damping losses order of 10-8
• Surface losses?
0 50 100 150 200 250 3001E-10
1E-9
1E-8
1E-7
1E-6
1E-5
1E-4
Loss
ang
le
Temperature [K]
Exper K span-max K span-min
Coupled field thermoelastic FEM Analysis
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
Glued suspension
2 10 100 3001E-8
1E-7
1E-6
1E-5
1E-4
Mode 1737 Hz
Loss
Ang
le
Temperature [K]
Suspension glued Suspension with spring
Advantages
•Increased thermal conductivity
•Less invasive
•Pressure less
•One face is free (for instance for coating layers)
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
First Bonded Si run
Direct bonding
•Pressure 4 bar
•Temperature 500 C
•Post processing annealing 2 hours at 1100 C
3 monocristalline Si disks bonded together using ‘direct bonding’
Single disc thickness 0.3 mm, diameter 4 inch
Glued suspension & capacitive readout
First Measurements (run in progress)
Bonded disk
0 10 20 30 40 50 60 70 80 90
1E-6
Loss
Ang
le
Temperature [K]
695.9 Hz 4840 Hz 6825.4 Hz
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
bonded Si: preliminary results
h=0.9 mm
d=0.15 mm
)()()( bondtot
bondBulkMeas E
E
ASSUMING
)()( bondtot
bondBulk E
E
nmt 80
1.
2.
53
2 10612
6
t
tE
E
tot
bond dh3
3.
BulkBond YY
(Dual goal order of 10-3)?
0 10 20 30 40 50 60 70 80 90
0,01
0,1
Bond
ing
loss
Ang
le
Temperature [K]
695.9 Hz 4840 Hz 6825.4 Hz
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
Silicon carbide Considered Samples
Typology Phase PolyType Sample Shape
Supplier
Sintered 1 AlphaUnknow
nBeams
Bettini (I)Disks
Sintered 2 Beta Unknown
Disks Bridgeston (J)
Infiltrated C/SiC
BeamsCesic (D)
Disks
Single crystal Beta4H Disk
Cree (USA)6H Disk
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
Silicon carbide Considered Samples
Typology Phase PolyType Sample Shape
Supplier
Sintered 1 AlphaUnknow
nBeams
Bettini (I)Disks
Sintered 2 Beta Unknown
Disks Bridgeston (J)
Infiltrated C/SiC
BeamsCesic (D)
Disks
Single crystal Beta4H Disk
Cree (USA)6H Disk
Already reported
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
Silicon carbide Considered Samples
Typology Phase PolyType Sample Shape
Supplier
Sintered 1 AlphaUnknow
nBeams
Bettini (I)Disks
Sintered 2 Beta Unknown
Disks Bridgeston (J)
Infiltrated C/SiC
BeamsCesic (D)
Disks
Single crystal Beta4H Disk
Cree (USA)6H Disk
Already reported
Report on this meeting
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
Silicon carbide Considered Samples
Typology Phase PolyType Sample Shape
Supplier
Sintered 1 AlphaUnknow
nBeams
Bettini (I)Disks
Sintered 2 Beta Unknown
Disks Bridgeston (J)
Infiltrated C/SiC
BeamsCesic (D)
Disks
Single crystal Beta4H Disk
Cree (USA)6H Disk
Already reported
Report on this meetingStill not measured
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
C/SiC disks measurements
•Samples: disks 3 inch in diameter 1,2,3 mm in thickness
•Two different carbon matrix
•Nodal point suspension
•Capacitive readout
•Two normal modes investigated
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
C/SiC disks measurements
2 10 100 3002E-6
1E-5
1E-4
Loss
Ang
le
Temperature [K]
Disck1mm Disk 2mm 2067 Hz 3470 Hz 2070 Hz 3437 Hz 4747 Hz 7947 Hz 4750 Hz 7950 Hz
1. Not evidence of a frequency dependence → Thermoelastic dissipation not dominant
2. Not evidence of a thickness dependence → Surface dissipation not dominant
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
C/SiC carbon matrix size effect
2 10 100 3002E-6
1E-5
1E-4Disk Thickness 1mm Second Doublet
Loss
Ang
le
Temperature [K]
DiskA 4747 Hz DiskA 4750 Hz DiskB 4714 Hz DiskB 4715 Hz
1 10 100 5002E-6
1E-5
9E-5Disk Thickness 1mm First Doublet
Loss
Ang
le
Temperature [K]
DiskA 2067 Hz DiskA 2070 Hz DiskB 2048 Hz DiskB 2050 Hz
2 10 100 3002E-6
1E-5
8E-5Disk Thickness 2mm First Doublet
Loss
Ang
le
Temperature [K]
DiskA 3470 Hz DiskA 3473 Hz DiskB 3415 Hz DiskB 3418 Hz
Weak
dependence
2 10 100 3002E-6
1E-5
1E-4Disk Thickness 2mm Second Doublet
Loss
Ang
le
Temperature [K]
DiskA 7947 Hz DiskA 7950 Hz DiskB 7807 Hz DiskB 7810 Hz
Disk A:
bigger size of the C-matrix
Disk B:
Smaller size of the C-matrix
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
Single crystal SiC
SAMPLES
•Disks 2 inch in diameter
•About 0.3 mm in thickness
•Two different polytypes
4H and 6H
Experimental set-up
•Nodal suspension (glued)
•Capacitive readout (comb cap)
4H SiC6H SiC
Capacitive readout
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
Single crystal SiC: preliminary measurements
Measurements in progress
0 20 40 60 80 100
1E-6
1E-5
3E-5
loss
Ang
le
Temperature [K]
4H SiC 4980 Hz 6H SiC 5120 Hz C/SiC 4747 Hz
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
C/SiC disk
2 10 100 3002E-6
1E-5
1E-4
Loss
Ang
le
Temperature [K]
Disck1mm Disk 2mm 2067 Hz 3470 Hz 2070 Hz 3437 Hz 4747 Hz 7947 Hz 4750 Hz 7950 Hz
2 10 100-0,0004
-0,0002
0,0000
0,0002
Disk1mm 2067 Hz Disk2mm 3470 Hz Disk1mm 2070 Hz Disk2mm 3473 Hz Disk1mm 4747 Hz Disk2mm 7947 Hz Disk1mm 4750 Hz Disk2mm 7950 Hz
Temperature [K]
Not exluded quantum tunneling of two level systems
Hope that at ultralow temperature scales as T-3
Weak temperature dependence
Logaritmic dependence
Loss Angle Relative frequency shift
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
C/SiC ultrlow temperature measurement
The samples has been assembled past Friday in a DR of the Trento Univ.
Experimental set-up
SiC Disk for
Q measurements
Shacker
Capactive readout
SiC Disk with thermometer
4th ILIAS-GW annual meeting
Summary
•Developed an experimental apparatus for measuring mechanical losses down to 10-8 at cryogenic temperature
•The first cryogenic measurements on Si bonded Disc is in progress
•Regardless the fabrication process the low temperature loss angle of the Silicon Carbide never go down to 10-6 . Ultracryogenic can help?
Next year program•Extend the measurements at ultracryogenic temperatures
•Systematic measurements on Si bonding losses
•Measure the thermal conductivity of bonding
•Complete the measurements on all the typology of SiC (beta phase)
•Measurement in collaboration with other Ilias groups
4th ILIAS-GW Annual Meeting J.P. Zendri Tuebingen 8-9 October 2007
Facility for the Q-factor measurement
IVC P=10-6
mbar
Sample (disk)
Suspension and thermal link
Holder (low thermal cond.)
Samples prop Actively thermal. (2-300K )
Cryogenic Liquid
LHe4 or LN2
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