パワーmosfetkobaweb/lecture/power-mosfet...概要 • パワーmosfetの用途 •...
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MOSFET
201532
1
-
MOSFET DMOSUMOS
MOSDMOSFETDMOSUMOSFET
V/dt
SOASafe Operating Area /MOS
MOSFETBaligas FOM for unipolar device
2007928
2
-
IdA
PC DC-DC
Li DC-DC
ABS
PPCFAX TVCCFL
PDP
VV
MOSFET
NEC 3
-
MOSFET
1/51/10
MOSFET
MOSFET
4
-
DMOSFET
N-
N+ N+
N+
P P
5
-
UMOSFET
N-
N+
N+ N+
P P
6
-
DSI
DSV
3GV
2GV
4GV
1GV
ONR
DSBV
DSI
MOSFET
DSVGS
DSm
V
Ig
23 GGGS VVV
gm
7
-
MOSFET
PN
VVK 7.0
3GV2GV1GV
GVDSI
DSV
MOSFET 5V [ ( Ron ]
8
-
MOSFET
NP
P
N+P
N+P
DMOS NP
UMOS
9
-
MOSFET
NX
PX
SNX
SPX
DN
x
P NP XX
N P
P
10
-
P
B B. Jayant Baliga
1m
11
-
DMOSFET
N-
N+ N+
N+
N-
N+
N+
N+
12
-
DMOS
B B. Jayant Baliga
ND
13
-
UMOSFET
N-
N+
N+ N+
P P
P/N
P Ron
14
-
MOS
Mq
VE
0q
Bq
Bq
q
M
FE
CE
iE
S
FE
ox
MSFBC
QV 0
iE
VE
CEM
FE
S
FE
0V
15
-
MOS
0V
M
FE
VE
CE
iE
S
FE
VE
CE
iE
S
FE
Sq
M
FE
0V
16
-
1.E-09
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
-0.4 -0.2 0 0.2 0.4 0.6 0.8 1
SV)
Q
SC
/cm
2
B2
PSi NA=11016cm-3
17
-
0.1
1.0
10.0
1.E+13 1.E+14 1.E+15 1.E+16 1.E+17
cm-3
m
BS 2
i
A
A
sB
A
sm
n
N
Nq
kT
qNW ln
42
22
18
-
-2
0
2
4
6
8
10
1.E+02 1.E+03 1.E+04
tox
VT
V)
NA=1e14
NA=1e15
NA=1e16
NA=1e17
NA=1e18
ox
SBFBT
C
QVV 2
N+SiQ0=31010cm-2
cm-3
19
-
MOSFET
TGSoxnsCH
DSTGSoxnsDSDSTGSoxnsDS
V
TGSoxns
L
DS
DS
VVCZ
LR
VVVL
ZCVVVV
L
ZCI
dVVVVCZdyI
dRIdV
DS
2
00
2
1
N+ N+
y dy
LP
)()()(
yVVVCyQ
yQZ
dydR
TGSoxn
nns
DSV
20
-
MOSFET
N+ N+
P
L
TGSoxnsGS
DSms
DSD
A
sTGS
oxnsDS
TGSDSTGSoxns
DS
VVL
ZC
dV
dIg
VVqN
LVVLL
ZCI
VVVVVL
ZCI
2 ,
2
,2
2
2
21
-
qncQ
QcR
qn
b
aR
b
a
cbc
a
bc
a
qnGR
GVVa
bcqnbc
a
VqnbcEqnbcqnvI
B
s
B
s
B
BBB
'
'
1
:1
, 1
11
V
a
c
b
I
a
VE
Ev B
22
-
DMOSFET
N+CSR
NR CH
R AR
CDR
SBR
DR
JR
P
N
N
CDSBDJACHNCSONRRRRRRRRR 23
-
DMOS
N+
N+
JFET
m 2GL
PX
t
x
NL
0W
dxN
a
y
24
-
DMOS
: ,: ,, SBSBSBSBSPSB ttR
N: ,22
1, SNGNSNSPN
RmLLRR
SB
1 1
S
R
RS
S
R
:
1
:
25
-
DMOS
JFET
TGoxnsGCH
SPCHVVC
mLLR
2
2,
6.0 ,2
22,
K
VVC
mLXLKR
TGoxns
GPGSPA
: ,
22
2
0
0, D
PG
GPDSPJ
WXL
mLWXR
26
-
DMOS
a
tamLR
a
ta
Zdx
ZxaR
GDSPD
Dt
DD
ln2
2
ln
,
0
0
0
,22
2ln
2
2WXmt
WXL
mLmLR PD
PG
GGDSPD
27
-
DMOS
: ,, CCSPDCR
: ,, CSCCS
CellSPSC A
A
AR
p ,1063.1
n ,1093.5
5.28
,
5.29
,
PP
Ap
DSPON
PP
Dn
DSPON
BVNq
WR
BVNq
WR
28
-
DMOS
0
2
4
6
8
10
12
0 5 10 15 20 25
Poly-Si m
m
cm
2
Rch,sp
RA,sp
RJ,sp
RD,sp
Rtotal
Poly-Si 16m BV50V
Ron
2
, cm m 1.0idealonR
29
-
0
20
40
60
80
100
120
140
0 10 20 30 40 50 60
Poly-Si m
m
cm
2
Rch,sp
RA,sp
RJ,sp
RD,sp
Rtotal
DMOS
BV500V Poly-Si 16m
2
, cm m 33idealonR
30
-
DMOS3
0
2
4
6
8
10
12
0 5 10 15 20 25
Poly-Si m
m
cm
2
Rch,sp
RA,sp
RJ,sp
RD,sp
Rtotal
Poly-Si 8m BV50V
2
, cm m 1.0idealonR
RonP 31
-
UMOSFET
N+
P
N+
x
y
NL
CHL
t
2mW 2tW
32
-
UMOSFET
N+
TGoxns
tmCHSPCH
VVC
WWLR
2,
2ln
2,
mD
t
tmtmDSPD
Wt
W
WWWWR
m
tm
NNSPN W
WWtR
,
33
-
UMOS
N+
SBSBSPSB tR ,
m
tmCSPSC
W
WWR ,
CSPDCR ,
34
-
UMOS
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.0 1.0 2.0 3.0 4.0
UMOS m
m
cm
2
Rch,sp
RD,sp
Rsb,sp
Rtotal
BV50V 2
, cm m 1.0idealonR
UMOS 35
-
IN
mm
C
gf
2
: ,2
1G
GIN
in RRC
f
GININ VfCi 2 GmOUT Vgi
SiGR
36
-
DMOS
GDCNC PC
OC
gt
ot
P
N+
N
MGSIN
GDLmM
CCC
CRgC
1
OPNGSCCCC
37
-
DMOS
N+
N+
P
P
LP
JFETRon
P 38
-
GI
iL
sL
D
SV
GR
S
G
GSC
GDC
MOSFET
GSV
LI0
GAV
0
GAV
GV
GV
39
-
MOSFET
VG=0, IDS=0, VDS=VS t=0 (VGA)
TVt
GAV
GPV
t
t
LI
SV
1t 2t 3t
FV
DSI
GSV
DSV
GS RL
40
-
1VGSVT)
2MOSFET
GAT
GDGSG
CCRt
GAGS
VVCCRt
eVtV GDGSG
1
1ln
1)(
1
IL MOSFET
LTGAm
TGAmGDGSG
T
CCRt
GAmTGSmDS
IVVg
VVgCCRt
VeVgVVgtI GDGSG
ln
1)(
2
41
-
3MOSFETVSVF MOSFETIL
CM(=CGD)
GP
m
LTGS V
g
IVV
FDS
m
LTGA
GDGFS
GD
GDSDG
m
LTGA
GDG
SDS
m
LTGA
GG
GPGAG
VtV
g
IVV
CRVVt
C
I
dt
dV
dt
dVt
g
IVV
CRVtV
g
IVV
RR
VVI
)( ,
,1
)(
1
33
RGCGD 42
-
MOSFET
TV t
GAVGPV
t
t
LI
FV
4t 5t 6t
SV
DSI
GSV
DSV
VG=VGA, IDS=IL, VDS=VF t=0 0
GS RL
43
-
4IL
mLT
GAGDGSG
CCRt
GA
m
LTGS
CCRt
GAGS
gIV
VCCRt
eVg
IVtV
eVV
GDGSG
GDGSG
ln
)(
4
44
RG
44
-
5MOSFETVFVS MOSFETIL
CM(=CGD)
GP
m
LTGS V
g
IVV
SDSmLT
FSGDG
GD
GDSDG
GDG
mLTFDS
G
mLT
G
GSG
VtVgIV
VVCRt
C
I
dt
dV
dt
dVt
CR
gIVVtV
R
gIV
R
VI
)( ,
,)(
55
45
-
6MOSFETVGPVT
LS LS MOSFET
0)( ,1ln
)(
)(
66
tIVg
ICCRt
VgeIVgtI
eg
IVtV
DS
Tm
LGDGSG
Tm
CCRt
LTmDS
CCRt
m
LTGS
GDGSG
GDGSG
RGCGD CGD
46
-
MOSFET V/
GDC
GSC
dt
dV
NPN
BR
DBC
D
S
G
GR
1MI
2MI
GSV BEV
IM1MOSFET IM2 47
-
V/ IM1
dv/dt
GDG
TTGS
TGS
GDGMGGS
CR
V
dt
dVVV
VV
dt
dVCRIRV
MOSFET
MOSFET
1
dV/dt VT Ron VT
dV/dt VT 48
-
V/ IM2
dv/dt
DBB
bibiBE
biBE
DBBMBBE
CR
V
dt
dVVV
VV
dt
dVCRIRV
2
dV/dt RB PN
+LN+
RBP VbiRB
B
bi
R
V
-
49
-
MOSFET dV/
N
BR
N
NL
DBC
P
A
ARB 50
-
PN+
P N+P N+A BVCEO0.6BVCBO IC
nBSBD
kTIqR
BVV
1
0
,1
RBP+
I
51
-
MOSFET
BR
N
BR
ABI
MIEI
CI
SI
DI
N
N
NPN
S
G
D
52
-
MOSFET
BD
n
B
SBDV
I
R
BVV
,
11,
P IM
RBP+
53
-
MOSFETSOA
B B. Jayant Baliga
500V Tj150
54
-
MOSFET
N-
N+ N+
N+
P P
PiN MOSFET100A/cm2 N 55
-
MOSFET
IRR RB P
+
RRI
N+
N
P
BR
N+
P
P
56
-
3.2
300)25()(
TRTR onon
3.2
300)25()(
TgTg mm
57
-
B
gB
B
As
ox
BT
q
TE
TdT
d
qN
CdT
d
dT
dV
2
)0(1
21
P
58
-
MOSFET
c
Dcs
D
ncsD
Didealspon
E
BVW
qBV
EN
E
BV
Nq
WR
2 ,
2
4
2
3
2
)(,
devicesunipolar for merit of figure sBaliga:3 ncsE
GaAs / Si 12.7, SiC / Si 200
SiC UMOSFET
Si 1000VSi
59
-
Baliga-pair
Ron,sp Ron,sp 1000V 0.1V
Si MOSFET FBSOA
N+
N
Si MOSFET
SiC MESFET
DSiC
SB
SSiC
GSiC
DB
GB GM
SM
DM
N+
a
JFET
60
-
MOSFET
200V Ron SOA
200V PDP
MOSFET 600V
AC
70100V 1000V
SiC Ron,sp
Ron,sp1/200Si
61
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