alex lidow efficient power conversion corporation...efficient power conversion corporation alex...
TRANSCRIPT
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www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 1
The eGaN® FET
Journey Continues
Efficient Power Conversion Corporation
Alex Lidow
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www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 2
Agenda
• Where are we now?
• High Frequency Resonant Converters
• Wireless Power
• Envelope Tracking
• Summary
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www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 3 F0049, not a controlled doc.; RT001b 2/13/09 www.epc-co.com 3 EPC - The Leader in eGaN® FETs Darnell Power Forum 2012
Buck Converters
Forward Converters
Flyback Converters
Full-Bridge Isolated Converters
Resonant Converters
Wireless Power
High Frequency Buck Converters
for Envelope Tracking
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www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 4
Resonant Converters
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Ref: Y. Ren, M. Xu, J. Sun, and F. C. Lee, “A family of high power density unregulated bus converters,” IEEE Trans. Power Electron., vol. 20, no. 5, pp. 1045–1054, Sep. 2005.
VGS(S1,S3)
VGS(SR1)
VGS(S2,S4)
VGS(SR2)
ILK1
ILK2
4:1
48V 12V
SR1
SR2
Resonant Converter
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www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 6
eGaN® FET vs MOSFET
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www.epc-co.com EPC - The Leader in eGaN® FETs Darnell Power Forum 2012 7
Efficiency Comparison
90
91
92
93
94
95
96
97
98
0 5 10 15 20 25 30 35 40
Eff
icie
nc
y (
%)
Output Current (IOUT)
1.2 MHz MOSFET
1.2 MHz
eGaN
10 W 12 W
14 W
FS = 1.2 MHz, VIN = 48 V, and VOUT = 12 V
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0
2
4
6
8
10
12
Power Loss (W)
Gate Drive
Transfomrer Core
Conduction + Turn Off
eGaN
IOUT = 20 A
MOSFET
IOUT = 20 A
eGaN
IOUT = 2.5 A
MOSFET
IOUT = 2.5 A
FS = 1.2 MHz, VIN = 48 V, and VOUT = 12 V
Loss Breakdown
Transformer
Core
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Wireless Power
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Wireless Power
10
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Wireless Power
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Wireless Power
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Efficiency Comparison
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Loss Breakdown
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Envelope Tracking
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Effect of Peak-to-average-power-ratio
Fixed supply
Peak Power Average
Power
Output Power (dBm)
Output
Probability
Average efficiency
only 25%
Peak efficiency
up to 65%
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Effect of ET
Envelope Tracking
Output Power (dBm)
Output
Probability
Average
Power
Average efficiency
~50% (incl. ET)
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Linear-assisted Buck ET
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Efficiency
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1MHz Loss Breakdown
Top GaN FET
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4MHz Loss Breakdown
Top GaN FET
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Summary
• eGaN FETs are superior compared with
power MOSFETs in hard-switched and
resonant converters
• eGaN FETs operate efficiently in multi-
megahertz envelope tracking and
wireless power converters
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The end of the road
for silicon…..
is the beginning of
the eGaN FET
journey!