advance datasheet revision: april 2016
TRANSCRIPT
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Advance Datasheet Revision: April 2016
APN244 24-28 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps ©2016 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Product Features
RF frequency: 24 to 28 GHz
Linear Gain: 20 dB typ.
Psat: 38 dBm typ.
Die Size: 6.43 sq. mm.
0.2um GaN HEMT Process
4 mil SiC substrate
DC Power: 28 VDC @ 0.5 A
Product Description The APN244 monolithic GaN HEMT amplifier
is a broadband, two-stage power device,
designed for use in Ka-Band communication
applications such as point-to-point and
point-to-multipoint digital (LMDS) radios and
SatCom Terminals. To ensure rugged and
reliable operation, HEMT devices are fully
passivated. Both bond pad and backside
metallization are Au-based that is compatible
with epoxy and eutectic die attach methods.
Applications
Point-to-Point Digital Radios
Point-to-Multipoint Digital Radios
Space-Earth Communications
Space Research & Earth Exploration
Performance Characteristics (Ta = 25°C)
Absolute Maximum Ratings (Ta = 25°C)
Page 1
X = 3.3mm Y = 1.95mm
Specification * Min Typ Max Unit Frequency 24 28 GHz
Linear Gain 18 20 dB
Input Return Loss 7 8 dB
Output Return Loss 4 10 dB
P1db (PP*) 36 dBm
Psat (PP*) 37 38 dBm
PAE @ Psat (PP*) 31 %
Max PAE (PP*) 32 %
Vd1, Vd2 28 V
Vg1 -3.5 V
Vg2 -3.5 V
Id1 100 mA
Id2 400 mA
Parameter Min Max Unit
Vd1 ,Vd2 20 28 V
Id1 100 mA
Id2 400 mA
Vg1, Vg2 -5 0 V
Input drive level 27 dBm
Assy. Temperature 300 deg. C
(TBD seconds)
* Pulsed-Power On-Wafer unless otherwise noted
Approved for Public Release: Northrop Grumman Case 16-1027, 05/16
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Advance Datasheet Revision: April 2016
APN244 24-28 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps ©2016 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Linear Gain vs. Frequency *
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 = 100 mA, Id2 = 400 mA
Power, Gain, PAE% vs. Frequency *
Output Return Loss vs. Frequency *
* Pulsed-Power On-Wafer
Page 2
Input Return Loss vs. Frequency *
0
2
4
6
8
10
12
14
16
18
20
22
24
26
20 21 22 23 24 25 26 27 28 29 30 31 32
Gain
(d
B)
Frequency (GHz)
0
5
10
15
20
25
30
35
40
45
23 24 25 26 27 28 29 30
Po
ut
(dB
m),
Gain
(d
B),
PA
E%
Frequency (GHz)
Linear Gain (dB) Gain @ Pin=-10 dBm
PGain@Pin=27dBm (dB) P1dB (dBm)
Psat (dBm) PAE% @ PSat
Max PAE%
-20-19-18-17-16-15-14-13-12-11-10-9-8-7-6-5-4-3-2-10
20 21 22 23 24 25 26 27 28 29 30 31 32
Ou
tpu
t R
etu
rn L
oss (
dB
)
Frequency (GHz)
-30
-25
-20
-15
-10
-5
0
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
Inp
ut
Retu
rn L
oss (
dB
)
Frequency (GHz)
Approved for Public Release: Northrop Grumman Case 16-1027, 05/16
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Advance Datasheet Revision: April 2016
APN244 24-28 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps ©2016 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
Power, Gain, PAE% vs. Frequency
Pulsed-Power On-Wafer
Output Power, Gain vs. Input Power
Pulsed-Power On-Wafer
Page 3
PAE% vs. Input Power
Pulsed-Power On-Wafer
Stage Currents vs. Input Power
Pulsed-Power On-Wafer
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 = 100 mA, Id2 = 400 mA
0
5
10
15
20
25
30
35
40
-10 0 10 20 30
PA
E%
Input Power (dBm)
Freq=23 GHz
Freq=24 GHz
Freq=25 GHz
Freq=26 GHz
Freq=27 GHz
Freq=28 GHz
Freq=29 GHz
Freq=30 GHz
02468101214161820222426283032343638404244
0
2
4
6
8
10
12
14
16
18
20
22
-10 0 10 20 30
Po
ut(
dB
m)
Gain
(d
B)
Input Power (dBm)
Gain@23GHzGain@24GHzGain@25GHzGain@26GHzGain@27GHzGain@28GHzGain@29GHzGain@30GHzPiPo@23 GHzPiPo@24 GHzPiPo@25 GHz
Gain
Pout
0
100
200
300
400
500
600
700
800
900
1000
-10 -5 0 5 10 15 20 25 30
Id1(m
A)
Pin (dBm)
Id1@23 GHz Id1@24 GHz
Id1@25 GHz Id1@26 GHz
Id1@27 GHz Id1@28 GHz
Id1@29 GHz Id1@30 GHz
Id2@23GHz Id2@24GHz
Id2@25Ghz Id2@26GHz
Id2@27GHz Id2@28GHz
Id2@29GHz Id2@30GHz
0
5
10
15
20
25
30
35
40
45
23 24 25 26 27 28 29 30
Po
ut
(dB
m),
Gain
(d
B),
PA
E%
Frequency (GHz)
Linear Gain (dB) Gain @ Pin=-10 dBm
PGain@Pin=27dBm (dB) P1dB (dBm)
Psat (dBm) PAE% @ PSat
Max PAE%
Approved for Public Release: Northrop Grumman Case 16-1027, 05/16
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Advance Datasheet Revision: April 2016
APN244 24-28 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps ©2016 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected] Page 4
Die Size and Bond Pad Locations (Not to Scale)
Biasing/De-Biasing Details:
Bias is single sided and is from the top only.
Listed below are some guidelines for GaN device testing and wire bonding: a. Limit positive gate bias (G-S or G-D) to < 1V
b. Know your devices’ breakdown voltages
c. Use a power supply with both voltage and current limit.
d. With the power supply off and the voltage and current levels at minimum, attach the ground lead to
your test fixture.
i. Apply negative gate voltage (-5 V) to ensure that all devices are off
ii. Ramp up drain bias to ~10 V
iii. Gradually increase gate bias voltage while monitoring drain current until 20% of the operating
current is achieved
iv. Ramp up drain to operating bias
v. Gradually increase gate bias voltage while monitoring drain current until the operating current
is achieved
e. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable):
i. Gradually decrease drain bias to 0 V.
ii. Gradually decrease gate bias to 0 V.
iii. Turn off supply voltages
f. Repeat de-bias procedure for each amplifier stage
Approved for Public Release: Northrop Grumman Case 16-1027, 05/16
1950 µm
903 µm 903 µm
3300 µm
1327 µm
VG
2
VD
2
RFIN
GND
GND
GN
D
GN
D
GN
D
RFOUT GND
GND
GN
D
X = 3300 µm 25 µm Y = 1950 25 µm DC Bond Pad = 100 x 100 0.5 µm RF Bond Pad = 100 x 100 0.5 µm Chip Thickness = 101 5 µm
528 µm
928 µm
VD
1
VG
1
1927 µm
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Advance Datasheet Revision: April 2016
APN244 24-28 GHz GaN Power Amplifier
Web: http://www.as.northropgrumman.com/mps ©2016 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: [email protected]
RFIN GND
GND RFOUT
GND
GND
VG
2
VD
2
GN
D
GN
D
GN
D
GN
D
VG
1
Page 5
Recommended Assembly Notes
1. Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier.
2. Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.
3. Part must be biased from both sides as indicated.
4. The 0.1uF, 50V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device is to be used, do NOT use the 0.1uF , 50V Capacitors.
Mounting Processes
Most NGAS GaN IC chips have a gold backing and can be mounted successfully using either a conductive epoxy or
AuSn attachment. NGAS recommends the use of AuSn for high power devices to provide a good thermal path and a
good RF path to ground. Maximum recommended temp during die attach is 320oC for 30 seconds.
Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the pick up
tool.
CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN CHIPS.
Suggested Bonding Arrangement
RF Output
Substrate
RF Input
Substrate
= 100 pF, 15V (Shunt)
= 10 Ohms, 30V (Series)
= 0.01uF, 15V (Shunt)
VG2 VD2
VG1
VD1
PLEASE ALSO REFER TO OUR “GaN Chip Handling Application Note” BEFORE HANDLING,
ASSEMBLING OR BIASING THESE MMICS!
= 0.1uF, 15V (Shunt)
= 100 pF, 50V (Shunt)
= 0.01uF, 50V (Shunt)
= 0.1uF, 50V (Shunt) [4] [4] [4]
VD
1
Approved for Public Release: Northrop Grumman Case 16-1027, 05/16