activity 4

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Lucille G. Yu BSEC 3 1 | Page Activity 4 Bipolar Junction Transistors (BJTs) Characteristics Objectives: 1. To observe BJTs characteristics 2. To measure the voltage output Vrb, Vrc, Vce, Vre 3. To compute the current Ic, Ib, and Ie, and rE 4. To measure Vi, Vo, Av and the frequencies 5. To compare the input and output phases of the circuit Introduction: Bipolar junction transistors (BJT) are very versatile in certain applications. It can be used as an amplifier, a switch, or an oscillator. It has two types, the NPN and PNP transistors. It also has three terminals labeled as the base, the collector and the emitter. In construction of BJTs, it should consist of a p-n junction that is reversed biased and the other forward biased. In operating a BJT, its conditions should be set depending on the stability needed to be satisfied. This is achieved by biasing. Fig 1.1 Biasing an NPN transistor Fig 1.2 Symbol for NPN transistor The arrow in the graphic symbol defines the direction of emitter current through the device. Biasing is applying a DC voltage to a transistor in order to turn it on so that it can amplify AC signals. There are many ways to bias a transistor. Example of the biases are Voltage Divider output at the Collector and Emitter, and Common-Base Configuration Bias. Materials: Bread Board NPN transistor 10V DC Power Supply Connectors Resistors Multitester

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  • Lucille G. Yu BSEC 3

    1 | P a g e

    Activity 4

    Bipolar Junction Transistors (BJTs) Characteristics

    Objectives:

    1. To observe BJTs characteristics

    2. To measure the voltage output Vrb, Vrc, Vce, Vre

    3. To compute the current Ic, Ib, and Ie, and rE

    4. To measure Vi, Vo, Av and the frequencies

    5. To compare the input and output phases of the circuit

    Introduction:

    Bipolar junction transistors (BJT) are very versatile in certain applications. It can be used

    as an amplifier, a switch, or an oscillator. It has two types, the NPN and PNP transistors. It also

    has three terminals labeled as the base, the collector and the emitter. In construction of BJTs, it

    should consist of a p-n junction that is reversed biased and the other forward biased. In operating

    a BJT, its conditions should be set depending on the stability needed to be satisfied. This is

    achieved by biasing.

    Fig 1.1 Biasing an NPN transistor Fig 1.2 Symbol for NPN transistor

    The arrow in the graphic symbol defines the direction of emitter current through the

    device.

    Biasing is applying a DC voltage to a transistor in order to turn it on so that it can amplify

    AC signals. There are many ways to bias a transistor. Example of the biases are Voltage Divider

    output at the Collector and Emitter, and Common-Base Configuration Bias.

    Materials:

    Bread Board NPN transistor

    10V DC Power Supply Connectors

    Resistors Multitester

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    Function Generator Oscilloscope

    Procedure:

    1. Construct the circuits below.

    Figure 1. Voltage Divider Output at the Collector

    Figure 2. Voltage Divider Output at the Emitter

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    Figure 3. Common-Base Configuration

    2. Measure the voltages across RB1, RB2, RC, RE and the Collector-Emitter Junction and

    put the values on the table below.

    3. Compute for the current across the collector (IC), emitter (IE) and base (IB), and rE.

    4. Connect the circuit to the function generator and the oscilloscope.

    5. Measure Vi, Vo, and the frequencies at mid, high and low. Put the measured values on

    the table.

    Results:

    Voltage Divider output at the Collector

    DC Response:

    IB 95 A

    IE 0.423 mA

    IC 0.518 mA

    VCE 6.52 V

    VC 2.75 V

    VE 0.57 V

    VB1 8.66 V

    VB2 1.22 V

    AC Response:

    Mid Frequency:

    rE 61.47ohms

    AV -43.125

    Vi 128 mV

    Vo 5.52 V

    fmid 9.92 kHz

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    High Frequency:

    Vi 126 mV

    Vo 2.76 V

    fhigh 349.60 kHz

    Low Frequency:

    Vi 1.44 V

    Vo 3.20 V

    flow 1.19 Hz

    Voltage Divider output at the Emitter

    DC Response:

    IB 109 A

    IE 0.545 mA

    IC 0.436 mA

    VCE 6.40 V

    VC 2.91 V

    VE 0.60 V

    VB1 8.70 V

    VB2 1.24 V

    AC Response:

    Mid Frequency:

    rE 47.71 ohms

    AV 0.857

    Vi 616 mV

    Vo 528 mV

    fmid 8.71 kHz

    High Frequency:

    Vi 480 mV

    Vo 264 mV

    fhigh 5.32 MHz

    Low Frequency:

    Vi 296 mV

    Vo 248 mV

    flow 3.61 Hz

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    Common Base Configuration

    DC Response:

    IB 54.20 A

    IE 4.39 mA

    IC 4.336 mA

    VCE 6.53 V

    VC 6.09 V

    VE -0.69 V

    VRE 4.23 V

    VRC 4.19 V

    AC Response:

    Mid Frequency:

    rE 5.92 ohms

    AV 85.5

    Vi 40 mV

    Vo 3.42 V

    fmid 91.24 kHz

    High Frequency:

    Vi 36.40 mV

    Vo 1.72 V

    fhigh 2.09 MHz

    Low Frequency:

    Vi 106 mV

    Vo 1.76 V

    flow 3.04 kHz

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    Graphs:

    Voltage Divider Output at the Collector

    Mid Frequency

    Low Frequency

    High Frequency

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    Voltage Divider Output at the Emitter

    Mid Frequency

    Low Frequency

    High Frequency

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    Common-Base Configuration

    Mid Frequency

    Low Frequency

    High Frequency

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    Conclusion:

    In this activity, the most familiar configurations of the small-signal BJT amplifiers have

    been introduced. Each of the configurations has its unique characteristics with its particular AC

    and Frequency Analysis.

    Voltage Divider output at the Collector

    With AC analysis for this configuration, the output voltage is very much greater than the

    input voltage. Based on our experiment, the input is only at 128 millivolts while it outputs 5.52

    volts. It has a negative voltage gain Av implying that the input and the output are out of phase

    from each other.

    Voltage Divider output at the Emitter

    It is also called the common-collector configuration wherein the collector is shared

    between the input and output AC signals and the output follows the input. Typically it has a high

    input impedance, low output impedance, and a positive voltage gain slightly less than 1 which is

    always non-inverting , implying that it has an opposite phase behavior with the voltage divider

    output at the collector. Its input and output are in phase with each other.

    Common-Base Configuration

    The common base amplifier uses a bypass capacitor or a direct connection from base to

    ground to hold the base at ground for the signal only. In the experiment, it is observable that it has

    high voltage gain while its current gain is low value (about 1). It also has a low input resistance

    but a high output resistance. It also has an in phase input-output behavior since it has a positive

    voltage gain.

    Frequency Analysis

    The interesting and significant part of the analysis of all the three configurations is at their

    HIGH frequency response. The Voltage Divider output at the Collector should consider its miller

    capacitance so its fhigh is only at 349.60 kHz while the Voltage Divider output at the Emitter and

    the Common Base Configuration is significantly both in megahertz, respectively at 5.32 MHz and

    2.09 MHz. This is because they both have no miller capacitances to consider.