a counter based adc non-linearity measurement circuit and...

32
IEEE CICC, Austin, TX, April 14-17, 2019 1 Session 17 - Modeling, Reliability and Safety A Counter based ADC Non-linearity Measurement Circuit and Its Application to Reliability Testing Gyusung Park, Minsu Kim, Nakul Pande, Po-wei Chiu, Chris H. Kim University of Minnesota, Minneapolis, USA

Upload: others

Post on 12-Oct-2020

5 views

Category:

Documents


0 download

TRANSCRIPT

Page 1: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 1

Session 17 - Modeling, Reliability and Safety

A Counter based ADC Non-linearity Measurement Circuit and Its Application to

Reliability Testing

Gyusung Park, Minsu Kim, Nakul Pande,

Po-wei Chiu, Chris H. Kim

University of Minnesota, Minneapolis, USA

Page 2: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019

Outline

2

o Background

o Proposed ADC Non-linearity Measurement Circuit

o 65nm Test Chip Results

o Application to ADC Reliability Studies

o Conclusion

Page 3: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 3

Analog-to-Digital Converter (ADC) Non-linearity

� Differential Non-Linearity (DNL) : Deviation from ideal width (1LSB)� Integral Non-Linearity (INL) : Maximum deviation from ideal slope

Page 4: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 4

Analog-to-Digital Converter (ADC) Non-linearity

� Differential Non-Linearity (DNL) : Deviation from ideal width (1LSB)� Integral Non-Linearity (INL) : Maximum deviation from ideal slope

Page 5: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 5

ADC Non-linearity Testing: Histogram Method

ADCN bits

+FS

-FS

Sampling CLK

ADC

Output Code

Triangular Input Ramp

Tin

Page 6: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 6

ADC Non-linearity Testing: Histogram Method

ADCN bits

+FS

-FS

Sampling CLK

ADC

Output Code

Triangular Input Ramp

Code Bin (m=2N)

Tin

Output Code

Distribution

Page 7: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 7

ADC Non-linearity Testing: Histogram Method

ADCN bits

+FS

-FS

Sampling CLK

ADC

Output Code

Triangular Input Ramp

Code Bin (m=2N)

Ideal value

h(m

)

= #

of

Oc

c.

mDNL

+0.5

-0.5

DNL(m) =h(m)actual

h(m)Ideal- 1Tin

Page 8: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 8

ADC Non-linearity Testing: Histogram Method

ADCN bits

+FS

-FS

Sampling CLK

ADC

Output Code

Triangular Input Ramp

Code Bin (m=2N)

Ideal value

mDNL

+0.5

-0.5

mINL

+0.5

-0.5

DNL(m) =h(m)actual

h(m)Ideal- 1

INL(m) = Σ DNLXX = 0

m

Tin

Page 9: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 9

ADC Non-linearity Testing: Histogram Method

ADCN bits

+FS

-FS

Sampling CLK

ADC

Output Code

Triangular Input Ramp

Tin

� Simple setup

: Does not require any on-chip measurement circuits

Pros.

� Susceptible to package and

on-chip noise

Cons.

Page 10: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 10

Conventional On-chip Test Setup

� Better noise immunity

: Separate ADC operationfrom data transfer operation

� Requires large on-chip memory

(~1megabits) and long data transfer time

Cons.

Pros.

L. Kull, et al., ISSCC 2014

Page 11: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 11

Outlineo Background

o Proposed ADC Non-linearity Measurement Circuit

o 65nm Test Chip Results

o Application to ADC Reliability Studies

o Conclusion

Page 12: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 12

Proposed In-situ DNL/INL Measurement Circuit (10b)

� Consists of a decoder block + array of 5b counters

� Counters corresponding to

ADC codes increment their

count value

� Count value instead of ADC output code � readout data

volume↓

10-bit

SAR ADCD

ec

od

er10 bits

5-bit

Counter

5-bit

Counter

5-bit

Counter

5-bit

Counter

SC

AN

OU

TSCAN_CLK

(210

) Counters

Count

Value

Page 13: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 13

Proposed In-situ DNL/INL Measurement Circuit (10b)

� Separate ADC operation from data transfer operation

� Readout data volume↓ � small area overhead for storing

data compared to SRAM array

Page 14: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 14

Interleaved Design for Area Reduction

� 2-way interleaved design with only 50% counters

� Two separate tests for odd and even codes

� Stitch two test results for full DNL & INL histogram

Page 15: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 15

Step 1: Odd Code Measurement

Deco

der

SC

AN

OU

T

Page 16: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 16

Step 2: Even Code Measurement

Dec

od

er

SC

AN

OU

T

Page 17: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 17

Implementation of DNL/INL Measurement Circuit

� Total 512 5-bit counters corresponding to ADC out D<9:1>

� Unit cell = 5b counter + scan-out circuits

5b Counter

DQ

5b Counter

DQ

5b Counter

DQ

5b Counter

DQ

5b Counter

DQ

5b Counter

DQ

5b Counter

DQ

5b Counter

DQ

5b Counter

DQ

5b Counter

D Q

5b Counter

D Q

5b Counter

D Q

Unit Cell

4b Decoder

5b

De

co

de

r

Ro

w<

30

>R

ow

<3

1>

Ro

w<

0>

Ro

w<

1>

Col<0> Col<1> Col<15>D<9:5>

D<4:1>

Counter + Scan-out Bank: 512 unit cells

Scan-out

DEC_CLK

Page 18: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 18

Noise Immunity: Proposed vs. Off-chip Test

� DNL in the proposed method is not affected even if frequency increases

� Proposed method eliminates package and board noise issues

Proposed

Off-chip

Page 19: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 19

Outlineo Background

o Proposed ADC Non-linearity Measurement Circuit

o 65nm Test Chip Results

o Application to ADC Reliability Studies

o Conclusion

Page 20: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 20

Short-term Vth Instability

� Short-term Vth degradation and recovery occur due to Bias Temperature Instability (BTI)

� Time constant usually in the µs ~10’s of µs order

p+ p+

p+ p+

Stress (on-state)

Recovery (off-state)

VDDVDD

VDDVDD

+ + +

+ + +

|∆V

th|

|VS

G|

Time

Stress Recovery

|VSG|

~µsecOffset

~mV

VIP

VIN

Page 21: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 21

Impact on SAR-ADC OperationWith Vth instabilityWithout Vth instability

� Large input voltage difference � offset due to short-term Vth shifts

Page 22: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 22

Impact on SAR-ADC OperationWith Vth instabilityWithout Vth instability

� If input voltage difference < Vth shift difference in the next step � incorrect decision

Page 23: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 23

Impact on SAR-ADC OperationWith Vth instabilityWithout Vth instability

� Manifests as a 1LSB error in the output code

– Correct code pattern “0111” vs Incorrect code pattern “1000”

� Affects high-resolution, low-speed SAR-ADCs

Page 24: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 24

Output Codes Vulnerable to Short-term BTI

W. Choi, C. H. Kim, CICC 2015

� Prior arts identified vulnerable output codes

– Error can occur from second conversion step

– Odd codes ending with 0111…

– Even codes ending with 1000…

Page 25: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 25

Output Codes Vulnerable to Short-term BTI

� E.g. Error occurring in D8 step

– Large ∆VIN @D9 + small ∆VIN @D8

– Odd codes ending with 0111

Adjacent even codes ending with

1000

Page 26: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 26

Output Codes Vulnerable to Short-term BTI

� E.g. Error occuring in D7 step

– Large ∆VIN @D9, D8 + small ∆VIN

@D7

– Odd codes ending with 0111

Adjacent even codes ending with1000

Page 27: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 27

Stress Equalization, Variable Duty Cycle

� Stress equalization using switched source node

� Ratio between stress and recovery times can be varied

– Multi-phase VCO used to generate different duty cycles

|VS

G|

CL

K|∆

Vth

|V

B

Page 28: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 28

10b SAR-ADC DNL vs. Duty Cycle

� Shorter duty cycle � shorter BTI stress & longer recovery time

– DNL increases (or decreases) for odd (or even) vulnerable codes

– Subtle shift because comparators use IO input devices

-0.85

-0.90

-0.95

-1.00100 80 60 40 20

Code 127 Code 255 Code 383

Code 639 Code 767 Code 895

CLK Duty Cycle (%)

0

Most Vulnerable

Odd Code @ 0.125MHz

DN

L (

LS

B)

Page 29: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 29

10b DNL vs. Clock Frequency

� Short term Vth instability effect less at higher frequencies due to reduced stress time

DN

L (

LS

B)

DN

L (

LS

B)

Page 30: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 30

10b DNL vs. Comparator Type

� Short term Vth instability effect more pronounce for PMOS input comparator

DN

L (

LS

B)

DN

L (

LS

B)

Page 31: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 31

Chip Summary & Die Photo

Page 32: A Counter based ADC Non-linearity Measurement Circuit and ...people.ece.umn.edu/groups/VLSIresearch/papers/2019/... · 10b SAR-ADC DNL vs. Duty Cycle Shorter duty cycle shorter BTI

IEEE CICC, Austin, TX, April 14-17, 2019 32

Conclusion

� Counter based measurement circuit is demonstrated for precise characterization of ADC DNL and INL

� Using the proposed method, short-term BTI is studied in a 10-bit SAR-ADC in 65nm CMOS

� Subtle DNL shifts can be accurately measured using

the proposed method

Acknowledgement: Dr. Vijay Reddy and Dr. Srikanth Krishnan at Texas Instruments for their technical feedback. This work was supported in part by the Semiconductor Research Corporation(SRC) and the Texas Analog Center of Excellence (TxACE).