a 140 ghz two-channel cmos transmitter using …...a 140 ghz two-channel cmos transmitter using...
TRANSCRIPT
![Page 1: A 140 GHz Two-Channel CMOS Transmitter using …...A 140 GHz Two-Channel CMOS Transmitter using Low-Cost Packaging Technologies Arda Simsek1,2, Ahmed S. H. Ahmed 1, Ali A. Farid ,](https://reader033.vdocuments.site/reader033/viewer/2022042515/5f72f9f5ba75ba711a76cedb/html5/thumbnails/1.jpg)
A 140 GHz Two-Channel CMOS Transmitter using Low-Cost
Packaging Technologies
Arda Simsek1,2, Ahmed S. H. Ahmed1, Ali A. Farid1, Utku Soylu1 and Mark J. W. Rodwell1
1University of California Santa Barbara, Santa Barbara, CA2Movandi, Irvine, CA
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Why 140GHz Wireless ?
2
Large available spectrum at mm-waves
Shorter wavelength – small IC, antenna arrays
Massive # of parallel channels – multiple independent beams
Low-cost antenna and transition design is critical
IC design above 100 GHz is easier with developments in CMOS and III-V
Packaging and antenna design is the challenge
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140 GHz 4-Channel Receiver
3
Direct conversion receiver
140 GHz LNA, double balanced passive mixer
LO distribution through two x9 multipliers from common LO port
1.69 mm x 1.76 mmGlobalFoundries 45nm SOI CMOS
-5
0
5
10
15
20
0 5 10 15 20
IC1-Ch.1IC1-Ch.4IC2-Ch.1IC2-Ch.4
Co
nvers
ion
Ga
in (
dB
)
BB Frequency (GHz)
Fixed LO @ 145.9 GHz
18 dB conversion gain 12 GHz 3-dB BW495 mA @ 1V
A. Simsek, et al, 2018 IEEE BCICTS,
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140 GHz 4-Channel Transmitter
4
Direct conversion transmitter
140 GHz PA (same with LNA), I/Q Gilbert Cell Active Mixer
LO distribution thru two x9 multiplier from common LO port
-10
-8
-6
-4
-2
0
2
4
140 145 150
VDD = 1 V
VDD = 1.1 V
VDD = 1.2 V
Tx
Ou
tpu
t P
ow
er
(dB
m)
Carrier Frequency (GHz)
Pout = -2 dBm @ 145 GHz463 mA @ 1V
1.69 mm x 1.76 mmGlobalFoundries 45nm SOI CMOS A. Simsek, et al, 2018 IEEE BCICTS,
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Proposed Low-Cost Package
5
Multi layer PCBs with
high resolution
large number of vias with < 8 mil diamater
cavity
…are expensive
Can we used 2 separate cheaper PCBs and align the height?
Less number of vias in the antenna board with higher resolution
Carrier PCB with large number of vias and less resolution
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Fully Packaged 2-Channel Transmitter
6
2-channel of one 4-channel CMOS transmitter and
2-channels of the 4-channel series-fed patch antenna array
2 I/Q baseband inputs and single LO input thru SMA connectors
Separation between the carrier and antenna PCB is < 50 um
Wirebond length is < 250-300 um which gives < 250-300 pH @ 140 GHz
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Fully Packaged 4-Channel Receiver
7
Two 4-channel CMOS receiver ICs used due to wirebond density
2-channel of each IC connected to the 4-channel series-fed patch antenna array
4 I/Q baseband outputs and two LO inputs thru SMA connectors
Separation between the carrier and antenna PCB is < 50 um
Wirebond length is < 250-300 um which gives < 250-300 pH @ 140 GHz
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Antenna Design and Measurements
8
Antennas and transitions designed in Astra MT77 substrate
5 mil substrate thickness, with Dk = 3, and Df = 0.0017
35 mil FR4 under to match the height with CMOS carrier + CMOS chip height
Test structures with GSG 150 um pitch wafer probe interface
(Single patches and 8-element series-fed patch array)
4-5 GHz frequency shift
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Antenna Design and Measurements
9
8-element series-fed patch antenna arrays designed in Astra MT77 substrate
5 mil substrate thickness, with Dk = 3, and Df = 0.0017
Test structure created with GSG 150 um pitch wafer probe interface
136, 140 and 144 GHz series-fed antenna arrays are designed
-20
-15
-10
-5
0
135 140 145 150 155
Re
turn
Lo
ss (
dB
)
Frequency (GHz)
137-145 GHz
140-150 GHz
144 GHz antenna array
Frequency shifted ~ 4-5 GHz
Radiation patterns simulated at 144 GHz, measured at 148 GHz
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Wirebond Transition Design
10
Ref. plane-1
Ref. plane-2
CMOS GSG pads (75 um pitch) to 50 Ohm microstrip line transition
90 Ohm GCPW line as a series tuning element
Fringing capacitance between wide microstrip to ground provides shunt tuning
Ground vias with 6 mil diameter/4 mil edge spacing – adds additional inductance
Insertion loss without the line = ~ 1.8 dB @148 GHz
Insertion loss with the line = ~ 2.5 dB @ 148 GHz
0.7 mil diameter gold wedge bonding with < 250-300 μm length
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System Experiments
11
2-channel transmitter board measurements:
Data transmission and open eyes up to 14.4 Gb/s QPSK using 1-channel
@25 cm wireless distance
Power combining experiment with 2 Tx channels
Tx-1 EIRP ~ 15 dBm
Tx-2 EIRP ~ 15 dBm
Combined EIRP ~ 20 dBm (ideally 6-dB higher)
Alignment and phases are imperfectly
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System Experiments
12
4-channel receiver board measurements:
20-21 dB conversion gain (single ended) with 4-5 GHz 3-dB BW
2 I/Q channels are shown here
I2 channel has a problem in the connector
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System Experiments
13
1-channel transceiver measurements:
25 cm wireless distance
1-channel transmitter and receiver
All losses de-embedded
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System Experiments
14
1-channel transceiver measurements:
4096 x 400 symbol length from AWG
BPSK modulation (same data on I/Q)
Saved I/Q output using DSA
Oversampling ratio of 8/10
Offline MMSE channel equalization
10 cm wireless data trans.
< 1x10-5 BER with
22 dB SNR (5 GBaud)
25 cm wireless data trans.
< 3x10-5 BER with
19 dB SNR (5 GBaud)
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Conclusion and Future Direction
15
• Low-cost antenna design and measurements at D-Band
• Wirebond transition design with < 2 dB insertion loss above 140 GHz
• Fully packaged, modular 2-channel transmitter and a fully packaged 4-channel receiver
• Beamforming gain demonstrated for a simple 2-channel transmitter
• 1-channel wireless data transmission experiments using these boards:
– 10 cm wireless data transmission with < 1x10-5 BER with 22 dB SNR (5 Gbaud BPSK)
– 25 cm wireless data transmission with < 3x10-5 BER with 19 dB SNR (5 Gbaud BPSK)
What is next?
• Higher order modulation schemes, larger arrays
• Multi-beam communications
• III-V PA integration for higher power
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Acknowledgments
16
• National Science Foundation (NSF) GigaNets program, Contract NO. CNS-1518812
• Global Foundries for the 45 nm CMOS SOI chip fabrication
• Advotech for the assembly
• Navneet Sharma, Hamidreza Memerzadeh, Nikolaus Klammer and Gary Xu at Samsung Research America for valuable suggestions and the measurement equipment.
• Prof. James F. Buckwalter for valuable comments.
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System Experiments
17
2-channel transmitter board measurements:
Farid
et al.
Visweswaran
et al.
Carpenter et
al.
Sawaby
et al.This Work
Technology22nm FDSOI
CMOS28nm CMOS 250nm InP
55nm SiGe
HBT45nm CMOS
Freq. [GHz] 125-145 138-151 110-170 110-150 140-150
Pout (dBm) 2.8 7 9 2.5 2
EIRP (dBm) - 11.5 - -20
(2-Ch)
Data Rate
(Gb/s)- - 44 (QPSK) 36 (QPSK) 14.4 (QPSK)
Pdc [mW]198 (Rx)
196 (Tx)
500
(3 TRx)
357
(1 TRx)
220
(1 Tx)
500
(4 Tx)
Area [mm2]1.44 (Tx)
1.44 (Rx)
6.5
(3 TRx)
2.34
(1 TRx)
90
(package)
2.94
(4 Tx)
Integration No Antenna On-Chip Antenna Wafer ProbingOff-Chip
Antenna
Off-Chip
Antenna
Comparison between state-of-the art designs
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Back-up Slides
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Antenna Design and Measurements
Unit cell design and patch results
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Antenna Design and Measurements
136 GHz (measured @140 GHz, return loss is not available)
140 GHz (measured @144 GHz)
-25
-20
-15
-10
-5
0
5
10
15
-80 -60 -40 -20 0 20 40 60 80
E-plane MeasuredH-plane SimulatedE-plane SimulatedH-plane Measured
Ga
in (
dB
)
Theta (Degree)
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Transmitter Beamforming Gain
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Transceiver (Bathtub)
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LNA
Measurements – Circuit Blocks
0
5
10
15
20
25
-30
-20
-10
0
10
20
120 130 140 150 160 170 180
Gain_Sim
NF_Sim
Gain_Meas
S11_Sim
S22_Sim
S11_Meas
S22_Meas
Gain
(d
B)
S11
/S2
2 (d
B)
Frequency (GHz)
-6
-4
-2
0
2
4
6
140 145 150 155 160
Measured #1 (VDD: 1 V)
Measured #2 (VDD: 1 V)
Measured #1 (VDD: 1.1 V)
Measured #2 (VDD: 1.1 V)
SimulatedOu
tpu
t P
ow
er
(dB
m)
Frequency (GHz)
x9 LO Multiplier
41 mA @ 1V
Peak Gain = 19.9 dB @ 145 GHz
3-dB BW = 10GHz
98 mA @ 1V
Peak output power = 1.5 dBm
@ 148 GHz
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Measurements – Receiver Channel
-5
0
5
10
15
20
0 5 10 15 20
IC1-Ch.1IC1-Ch.4IC2-Ch.1IC2-Ch.4
Co
nvers
ion
Ga
in (
dB
)
BB Frequency (GHz)
Fixed LO @ 145.9 GHz0
5
10
15
20
135 140 145 150 155 160 165 170
IC1-Ch.1IC1-Ch.4IC2-Ch.1IC2-Ch.4
Co
nvers
ion
Ga
in (
dB
)
RF Frequency (GHz)
Fixed BB @ 100 MHz
18 dB conversion gain 12 GHz 3-dB BWNarrow-band notch in RF response - limits the data rate163 mA + 109 mA + 223 mA = 495 mA @ 1V
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Measurements – Transmitter Channel
3-dB modulation bandwidth ~ 6 - 8 GHzTotal transmitter output power: -2 dBm with 1 V supply,
3 dBm with 1.2 V supply @ 145 GHz161 mA + 94 mA + 208 mA = 463 mA @ 1V
-10
-8
-6
-4
-2
0
2
4
140 145 150
VDD = 1 V
VDD = 1.1 V
VDD = 1.2 V
Tx
Ou
tpu
t P
ow
er
(dB
m)
Carrier Frequency (GHz)
-20
-15
-10
-5
0
5
0 2 4 6 8 10 12 14 16
IC1-Ch.1IC1-Ch.4IC2-Ch.1IC2-Ch.4
Re
lati
ve S
ide
ban
d
Po
wer
(dB
m)
Modulation Frequency (GHz)
Fixed RF @ 146.01 GHz
LO
LO+BBLO-BB
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Outline
• Motivation
• 140 GHz Transceiver in 45 nm CMOS SOI
• Proposed Low-Cost Package
– 2-Channel Transmitter
– 4-Channel Receiver
• Wirebond Transition Design
• 140 GHz Antenna Design and Measurements
• System Experiments and Results
• Conclusion and Future Direction26