CHM9435AJPT

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNT

P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.3 Ampere

APPLICATION

FEATURE

* High density cell design for extremely low RDS(ON).

CONSTRUCTION* P-Channel Enhancement

* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.

2005-02

* Rugged and reliable.* High saturation current capability.

CIRCUIT

Absolute Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter CHM9435AJPT Units

VDSS Drain-Source Voltage -30 V

VGSS Gate-Source Voltage ±20 V

ID

Maximum Drain Current - ContinuousA

- Pulsed

PD Maximum Power Dissipation 2500 mW

TSTG Storage Temperature Range -55 to 150 °C

Thermal characteristics

RθJA Thermal Resistance, Junction-to-Ambient 50

-5.3

°C/W

(Note 3)

Note : 1. Surface Mounted on FR4 Board , t <=10sec2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%

-20

Dimensions in millimeters

SO-8* Small flat package. (SO-8 )

TJ Operating Temperature Range -55 to 150 °C

3. Repetitive Rating , Pulse width linited by maximum junction temperature

(Note 1)

4. Guaranteed by design , not subject to production trsting

SO-8

1

4

8

5

1.27 (0.05)BSC

.51 (0.020)

.10 (0.012)

.25 (0.010)

.17 (0.007)

4.06 (0.160)3.70 (0.146)

5.00 (0.197)4.69 (0.185)

1.75 (0.069)1.35 (0.053)

6.20 (0.244)5.80 (0.228)

.25 (0.010)

.05 (0.002)

1

4

58

S S S G

DD D D

MARKING* 9435A

RATING CHARACTERISTIC CURVES ( CHM9435AJPT )

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

50

ON CHARACTERISTICS

g FS Forward Transconductance VDS = -15V, ID = -5.3A 4

RDS(ON) Static Drain-Source On-Resistance mΩVGS=-10V, ID=-5.3A

SWITCHING CHARACTERISTICS

Qgs Gate-Source Charge 2.0

Q gd Gate-Drain Charge

ton Turn-On Time

nS

VDD = -15V

ID = -1.0A, VGS = -10 V

26tr Rise Time 13

-1

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA

nA

-30 V

nA

IDSS

S

Zero Gate Voltage Drain Current

I

VDS

Gate-Body Leakage

=

Gate-Body Leakage

-24 V,

V

V

GS

GS

=

20V,

= 0 V

VDS

µ

= 0 V

A

+100

-100VGS = -20V, VDS = 0 V

VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -1 V

VGS=-4.5V, ID=-4.2A

105tf Fall Time 50

Qg Total Gate Charge

6.0

VDS=-15V, ID=-5.3AVGS=-10V

Turn-Off TimetoffRGEN= 6 Ω

(Note 2)

(Note 4)

-3

7.0 S

nC

19

9

74

36

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

22.5 29

VSD

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage IS = -5.3A, VGS = 0 V

-1.9

-1.3

A

V

(Note 1)

(Note 2)

90

44

74

GSSF

I

I

GSSR

RATING CHARACTERISTIC CURVES ( CHM9435AJPT )

Typical Electrical Characteristics

0 0.5 1.0 1 .5 2 .0 2 .50

5

10

25

3.0

15

20

V , DRAIN-TO-SOURCE VOLTAGE (V)

I ,

DR

AIN

CU

RR

EN

T (A

)

DS

D

Figure 1. Output Characteristics

V -9 .0V

-7 .0V-8 .0V

GS=

V GS=

-10V

-6 .0V

V GS=-5 .0V

V GS=-4 .0V

V GS=-3 .0V

20

0

I ,

DR

AIN

CU

RR

EN

T (A

)D

0

4

8

VGS , GATE-TO-SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

J=25°CT J=125°CT

J=-55°CT

0.5 1.0 1 .5 2 .0 2 .5 3 .0

12

16

10

0 4 8 12 16 20 240

2

4

6

8

Qg , TOTAL GATE CHARGE (nC)

VG

S ,

GA

TE T

O S

OU

RC

E V

OLT

AG

E (V

)

Figure 3. Gate Charge

ID= -5 .3AVD S= -15V

2.2

0.7

-100

1.0

1.6

T , JUNCTION TEMPERATURE (°C)J

0.4

1.3

1.9

DR

AIN

-SO

UR

CE

ON

-RE

SIS

TAN

CE

R

, N

ORM

ALI

ZED

DS

(on)

Figure 4. On-Resistance Variation with Temperature

ID= -5.3AVG S= -10V

-50 0 50 100 150 200

Temperature

1.3

0.7

-50 -25 0 25 50 75 100 125 150

0.9

1.1

T , JUNCTION TEMPERATURE (°C)J

0.6

0.8

1.0

1.2

THR

ES

HO

LD V

OLT

AG

E

Vth

, N

OR

MA

LIZE

D G

ATE

-SO

UR

CE

Figure 5. Gate Threshold Variation with

ID=250uAVD S=VG S