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TRANSCRIPT
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-
Laboratory of Nuclear Solid State Physics, USTC
VIII
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� : Si, Ge� : III-V GaAs,
InP )� II-VI CdSe� : IV-IV SiC )
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Positron Studies of Semiconductor Defects (PSSD)
• PSSD-2004, 4 , • PSSD-2002, 3 , • PSSD-1999, 2 , McMaster Univ. • PSSD-1994, 1 , Halle,
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PSSD-Topics1. Basic work such as identification of defects: defect formation,
migration, agglomeration and annealing.2. Momentum distribution studies of defects: coincidence Doppler
broadening, angular correlation of annihilation radiation (ACAR). 3. Low-k/High-k dielectric insulating materials in semiconductor
devices4. Theoretical calculations of momentum distributions and positron
lifetimes5. Slow beam studies of surface and near surface regions of
semiconductors 6. High resolution positron lifetime studies of semiconductors7. Semiconductor defects studied by the experimental methods other
than positron annihilation8. Industrial application of positron annihilation to semiconductor
devices.
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Positron Annihilationin Semiconductors
Defect Studies
R.Krause-RehbergH.S.Leipner
Springer Series in Solid-State Science, 1998
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Introduction
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Positron in materials
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The positron diffusion length L+ is limited due to the finite lifetime of positrons in the defect-free bulk, b,
r is the relaxation time for the dominant scattering mechanism. The mean free path <l> and the positron diffusion length L+ of some representative semiconductors at room temperature are presented in Table.
Material <l>[nm] L+[nm]
Si 6.9, 6.6, 8.5 219, 214, 243GaAs 5.3 198Ge 5.3 200
* ,
mTk
DDL Brb ττ == +++
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undoped Si
Soininen, 1992
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Effect diffusion length Leff
Tk
E
Tk
eE
D
L
B
drift
B
drifteff
eff
2
2
2
12
−���
����
�+
=
+
λ
1994 , Britton , ,:
Edrift . .
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Vacancies
Shallow positron traps
Dislocations
Voids
Precipitates
Surfaces
Interfaces
Graned Material
Positronium formation
Trapping
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)/8.543(
,5.1
1
2/301
nmpsC
aCb
=
=τ
Siethoff 1998Phys.stat.sol.(b)205,R3
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Si
,
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ER~10meV
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Positron trapping rate κκκκ in negatively charged gallium vacancies determined in semi-insulating gallium arsenide as a function of temperature T. The trapping rate is normalized to the value measured at 20 °°°°K. Different symbols stand for different samples.
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�GGALDA
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Calculated values of the positron lifetime as a function of unit-cell volume. The symbols denote theoretical lifetime values from
• (O) perfect crystals• (∆∆∆∆) monovacancies• (����) divacancies
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EST~30-40meV
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The detrapping δ and tripping κst:
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Positron in Si
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2ps
2psp-Si:B
FZ-Si
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Electron-irradiation Si
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Theoretical calculation of vacancy clusters in Si
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Si 5
�������
�
�
+
+
−
−
:
255:
258:
260:
1
2
0
1
2
Si
Si
Si
Si
Si
V
V
psV
psV
psV
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Vacancy-phosphorus pairs(E centers)
(A )
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Multivacancies
Configuration of vacant sites in multivacancies: V4 witha zigzag chain(a) and a trigonal pyramid (b), V5 with a nonplanar shape(c), V6 with a closed hexagon (d), and V10 with an adamantine cage (e).
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Black atoms and bonds represent the removed atoms forming a cage of V14 in the ideal crystal (a).
Si
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The lifetime vs vacancy of each size. The solid and dashed lines indicate lifetimes for the relaxed and ideal geometries, respectively.
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)(0v
v
NBAN+
+= ττA=266.57ps
B=4.60
ττττ0=218ps
Si
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Defect lifetime vs vacancy clusters in Si
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• H• He• Kr• Ar• O• F
• N• As• Ge• B•
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Defects in ion-implanted Si
� S suf, Svas Sb , S� F .
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B Si
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B Si
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Shallow Doping
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Kwinonen 35, 60, 100 keV, 1 l06 H+
H+ Si , . ∆∆∆∆S
(=Sirradiated-Sunirradiated) , .
470-570K.
H
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• 260KeV P+ Si
600C20C S-E, 100KeV-
P+ 2% 25% ,100nm
, 100nm 100keV-P+
, .
P
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• The effect of isochronal anneal on the S-E data for P+ implanted Si
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• (O)600 ºC 200 keVSi(100) , 1.7 1017 ions/cm2.
• (����) 1300 ºC .
O
S Sb (<2keV)
S Sb (<9keV)
S=Sb, >20keV
S,
600C
.
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Irradiation induced defects
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PRB39,10164(1989)
Si
3-MeV, 20°°°°K×6
�
� 10� ,
220ps
2ps
16ps
39ps
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ττττ2
273ps277ps
,
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Si:P
1.5-MeV, 20°°°°K
15ps
26ps
,
.
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0.343eV
320ps
Mater.Sci.Forum175-177, 423(1995)
Si(ps)
295290V02
320278V-2
320260V2-2
320K10K
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FZ Si
6×1016n/cm2
3.6×1017n/cm2
1.2×1018n/cm2
219ps
0.5072
S
Meng and PuffJ.Phys.: Condens.matter6(1994)4971
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. 90°°°° K.
:~2 MeV, 4 K, 1018 cm-2)
monovacancy
divacancy
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4 °°°°K 300°°°°K (2 MeV).
The solid lines correspond to the trapping model taking into account a negatively charged vacancy defect and a negative ion as shallow positron trap.
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Positron in Germanium
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Positron life time spectroscopy in Si and Ge ,
TM denotes the melting point.
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20K
p-Ge 20°°°°K.
228ps
200°K 200K
Interpreted of monovacancies to vacancy-dopant complexes
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Defects in electron -irradiated Ge� Electron irradiation (2 MeV) induces Frenkel pairs
(vacancy - interstitial pairs)
� steep annealing stage at 200 K
� at high irradiation dose: divacancies are formed (thermally more stable)
263ps
285ps
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Positron in GaP
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Positron in InP
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n-InP, , .
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n-InP.
� 100-270K ;
� ~200K, ;
� .
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n-InP ,
.
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Positron lifetime of bulk and vacancy in InP
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GaAs with B3 structure GaAs with B10 ctructure
Positron in GaAs
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Positron density in a perfect GaAs lattice (110). The density value increases from the blue contours towards to the red ones. The positions of the Ga and As atoms are denoted by blue and red spheres, respectively.
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Positron density at an As vacancy in GaAs.
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Average positron lifetime calculated as a function of temperature for different vacancy concentrations.One-defect trapping model was used. Trapping into a negative vacancy was assumed.
GaAs
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Average positron lifetime as a function of measurement temperature in highly Si-doped VGF-grown GaAs The concentrations of silicon dopants are indicated. The lines are to guide the eye.
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Average positron lifetime as a function of measurement temperature for as-grown Si- and Te-doped GaAs. The data for GaAs:Te are taken from (Gebauer et al. 2003).
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High momentum part of Doppler broadening peak normalized to the data of bulk GaAs. corresponds to GaAs:Si studied by positron annihilation and STM spectroscopy (Gebauer et al. 1997); ( ) this study.
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Photoluminescencetopograms of wafer #1 measured for the four luminescence lines occurring in GaAs:Si.
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Photoluminescence topogram image of wafer #1 recorded at the luminescence line of 1100 nm. Exact positions of the sample pares taken for PALS measurements are indicated. The area of each single sample equaled 5 5 mm.
Average positron lifetimevs temperature measuredacross the wafer #1.
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(a) The distribution of SiGaVGa complexes across the wafer #1, as determined by PALS;
(b) intensity variation of the 1100 nm photoluminescence band, measured across wafer# 1.
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Experiments in n–GaAs
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Comparison of doped and undoped GaAs
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PRL, V78,17, J.Gebauer
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Electron-irradiation GaAs:Te
1019e-/cm2
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Structure in GaAs consisting of 12 vacancies. Atoms a and d are removed to get V14.
Ga atoms
vacancies
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Average positron lifetime vs W parameter for differently high-Te-doped GaAs. The W parameter is normalized to the value found in GaAs:Zn. All samples were annealed at 1100 C . The solid line is a linear fit to the data, showing that all samples contain the same defect type. The defect is identified to be a VGa-TeAs complex.
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Comparison of SEM and Munich PositronScanning Microscope
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The lifetime of bulk and vacancy in GaAs
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Positron in SiC
3C-SiC
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SiC Atomic structure
� Silicon Carbide has more than 200 polytype
� Polytype refers to a family of material which has common stoichiometric composition but not common crystal structure
� SiC are made by arrangement of covalently bonded tetrahedral Si and C atoms A
B
C
Possible stacking sequence for SiC tetrahedral structure
Edited from C. Kittle, 1996 and Mehregany et al., 2000
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Stacking order of 3C-SiC and 6H-SiC
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3 commonly used polytypes
3C-SiC:Cubic structure, Zinc-blend,
ABCABC….4H-SiC:
Hexagonal close packed, ABCBABCB…6H-SiC:
Hexagonal close packed, ABCACBABCAC…
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Atomic structure of 6H-SiCFrom: P. G. Neudeck, SiC
technology, 1998
Edited from: Matsunami, 2002
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Positron in SiC
Atomic positions for 3C-SiC and6H-SiC.
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SiC ,
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. ττττ1 ττττ2 , I2.
6H-SiC
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6H-SiC( )(Ee=2 MeV, Φ=1018 cm-2, T=4 K)
Bulk,142ps
197ps
750K
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6H-SiC( )(Ee=2 MeV, Φ=1018 cm-2, T=4 K)
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Slow positron beam
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• 2D-ACARSi
.
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• Experimental angular distribution of annihilation y-rays from in Si oriented along [100], [111], and [110] directions.
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• The electron momentum density in Si in several cross-sections corresponding to the reference Jones zone as shown.
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