2sk 3101sl

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2SK3101LS

Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee.

Specifications

Absolute Maximum Ratingsat Ta=25C

Parameter Symbol Conditions Ratings Unit

Drain-to-Source Voltage VDSS 400 V

Gate-to-Source Voltage VGSS 30 V

Drain Current (DC) ID 11 A

Drain Current (Pulse) IDP PW10s, duty cycle1% 44 A

Allowable Power Dissipation PD2.0 W

Tc=25C 40 W

Channel Temperature Tch 150 C

Storage Temperature Tstg --55 to +150 C

Avalanche Enargy (Single Pulse) *1 EAS 69.1 mJ

Avalanche Current *2 IAV 11 A

*1 VDD=50V, L=1mH, IAV=11A

*2 L1mH, single pulse

Electrical Characteristicsat Ta=25CRatings

Parameter Symbol Conditionsmin typ max

Unit

Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 400 V

Zero-Gate Voltage Drain Current IDSS VDS=320V, VGS=0 1.0 mA

Gate-to-Source Leakage Current IGSS VGS= 30V, VDS=0 100 nA

Cutoff Voltage VGS(off) VDS=10V, ID=1mA 3.0 4.0 V

Forward Transfer Admittance yfs VDS=10V, ID=8A 4.0 8.0 S

Static Drain-to-Source On-State Resistance RDS(on) ID=8A, VGS=15V 0.32 0.4

Marking : K3101 Continued on next page.

Ordering number : ENN7910

Any and all SANYO products described or contained herein do not have specifications that can handleapplications that require extremely high levels of reliability, such as life-support systems, aircraft'scontrol systems, or other applications whose failure can be reasonably expected to result in seriousphysical and/or material damage. Consult with your SANYO representative nearest you before usingany SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values thatexceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or containedherein.

2SK3101LSN-Channel Silicon MOSFET

General-Purpose Switching DeviceApplications

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2SK3101LS

Continued from preceding page.

RatingsParameter Symbol Conditions

min typ maxUnit

Input Capacitance Ciss VDS=20V, f=1MHz 1850 pF

Output Capacitance Coss VDS=20V, f=1MHz 480 pF

Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 240 pF

Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns

Rise Time tr See specified Test Circuit. 35 ns

Turn-OFF Delay Time td(off) See specified Test Circuit. 140 ns

Fall Time tf See specified Test Circuit. 41 ns

Total Gate Charge Qg VDS=200V, VGS=10V, ID=11A 58 nC

Diode Forward Voltage VSD IS=11A, VGS=0 0.9 1.2 V

Package Dimensions

unit : mm

2078C

Switching Time Test Circuit Unclamped Inductive Test Circuit

1 : Gate

2 : Drain

3 : Source

SANYO: TO-220FI(LS)

16.

0

14.

0

3.

6

3.

5

7.

2

16.

1

0.7

2.55 2.55

2.

4

1.20.9

0.75

0.

6

1.2

4.52.8

1 2 3

10.03.2

PW=1s

P.G RGS

50

G

S

D

ID=8A

RL=25

VDD=200V

VGS=15V

VOUT

2SK3101LS

D.C.0.5% 50

50DUT

VDD

L

10V

0V

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2SK3101LS

0 2015105

30

25

20

15

10

5

0

--50 1501251007550250--25

Gate-to-Source Voltage, VGS -- V

RDS(on) -- VGS

IT06563

25

20

15

10

5

0

0.2

10987654321

Drain-to-Source Voltage, VDS -- V

ID -- VDS

DrainCurrent,ID

--A

IT06561 Gate-to-Source Voltage, VGS -- V

ID -- VGS

DrainCurrent,ID

--A

VDS=10V

IT06562

Case Temperature, Tc -- C

RDS(on) -- Tc

IT06564

4 6 8 10 12 14 16 18 20

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0

VGS=6V

7V

8V

10V15V 25C

75C

ID=16A

1A

8A

Tc=25C

ID=8A

,VGS=10V

ID=8A

,VGS=15V

StaticDrain-to-Source

On-StateResistance,RDS(on)--

StaticDrain-to-Source

On-StateResistance,RDS(on)--

Tc=--25C

0.2

0.4

0.6

0.8

1.0

1.2

0

IF -- VSD

ForwardCurrent,IF--A

Drain Current, ID -- A IT06565275327532 3101.00.1

0.1

1.0

10

2

3

5

7

2

3

5

7

2

0 001

75

32

75

32

32

10

1.0

0.1

0.01

32

75

32

57

ForwardTransferAdmittance,

yfs

--S

yfs -- ID

IT06566

200150100500--50--100

0

7

6

5

4

3

2

1


CutoffVoltage,VGS(off)--V

VGS(off) -- Tc

VDS=10V

25C

75C

VGS=0V

--25

C

25C

Tc=-

-25C

VDS=10VID=1mA

Tc=75

C

Sw

itchingTime,SWTime--ns

SW Time -- ID

10

100

1000

7

3

2

5

7

3

2

5

7VDD=200V

VGS=15V

td(off)

trtd(on)

tf

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2SK3101LS

100101.0 2 3 5 7 2 3 5 7 52 3

656055504540353025201510500

12

10

8

6

4

2

Total Gate Charge, Qg -- nC

VGS -- Qg

Gate-to-SourceV

oltage,VGS--V

IT06569

0

0

0

20 40

45

2.5

2.0

1.5

1.0

0.5

40

35

30

25

20

15

10

5

60 80 100 120 140 160

160140120100806040200


Ambient Temperature, Ta -- CPD -- Tc

PD -- Ta

AllowablePowerDissipation,PD

--W

AllowablePowerDissipation,PD

--W

IT06571

IT06572

A S O


DrainCurrent,ID

--A

IT06570

Ciss, Coss, Crss -- VDS


Ciss,Coss,Crss--pF

IT06568

0.01

0.1

1.0

10

100

23

57

23

35

23

57

23

57

Crss

Coss

Ciss

f=1MHz VDS=200V

ID=11A

ID=11A

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2SK3101LS

Specifications of any and all SANYO products described or contained herein stipulate the performance,characteristics, and functions of the described products in the independent state, and are not guaranteesof the performance, characteristics, and functions of the described products as mounted in the customersproducts or equipment. To verify symptoms and states that cannot be evaluated in an independent device,the customer should always evaluate and test devices mounted in the customers products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and allsemiconductor products fail with some probability. It is possible that these probabilistic failures couldgive rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,or that could cause damage to other property. When designing equipment, adopt safety measures sothat these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.In the event that any or all SANYO products(including technical data,services) described orcontained herein are controlled under any of applicable local export control laws and regulations,such products must not be exported without obtaining the export l icense from the authorit iesconcerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic ormechanical, including photocopying and recording, or any information storage or retrieval system,or otherwise, without the prior written permission of SANYO Electric Co., Ltd.

Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is notguaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rightsor other rights of third parties.

This catalog provides information as of August 2004 Specifications and information herein are subject

Note on usage : Be careful in handling the 2SK3101LS because it has no protection diode

between gate and source.

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2sk 3101sl

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