Transistors

1Publication date: November 2002 SJC00218BED

2SD1350, 2SD1350ASilicon NPN triple diffusion planar type

For high breakdown voltage switching

■ Features• High collector-base voltage (Emitter open) VCBO

• Large collector power dissipation PC

• Low collector-emitter saturation voltage VCE(sat)

• M type package, allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.

■ Absolute Maximum Ratings Ta = 25°C

■ Electrical Characteristics Ta = 25°C ± 3°C

6.9±0.1 2.5±0.1

(1.0)

(1.0

)

(1.5)

(0.85) 0.45±0.05

0.55±0.1

(2.5)(2.5)

2 13

R 0.7

R 0.9

(0.4

)

3.5±

0.1

4.5±

0.1

4.1±

0.2

2.4±

0.2

1.25

±0.0

5

2.0±

0.2

1.0±

0.1

(1.5)

Unit: mm

1: Base2: Collector3: Emitter

M-A1 Package

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Parameter Symbol Rating Unit

Collector-base voltage 2SD1350 VCBO 400 V

(Emitter open) 2SD1350A 600

Collector-emitter voltage 2SD1350 VCEO 400 V

(Base open) 2SD1350A 500

Emitter-base voltage (Collector open) VEBO 5 V

Collector current IC 500 mA

Peak collector current ICP 1 A

Collector power dissipation * PC 1 W

Junction temperature Tj 150 °C

Storage temperature Tstg −55 to +150 °C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage 2SD1350 VCBO IC = 100 µA, IE = 0 400 V

(Emitter open) 2SD1350A 600

Collector-emitter voltage 2SD1350 VCEO IC = 500 µA, IB = 0 400 V

(Base open) 2SD1350A 500

Emitter-base voltage (Collector open) VEBO IE = 100 µA, IC = 0 5 V

Forward current transfer ratio hFE VCE = 5 V, IC = 30 mA 30

Collector-emitter saturation voltage VCE(sat) IC = 250 mA, IB = 50 mA 1.5 V

Base-emitter saturation voltage VBE(sat) IC = 250 mA, IB = 50 mA 1.5 V

Transition frequency fT VCB = 30 V, IE = −20 mA, f = 200 MHz 55 MHz

Collector output capacitance Cob VCB = 30 V, IE = 0, f = 1 MHz 7 pF(Common base, input open circuited)

Turn-on time ton VCC = 200 V, IC = 100 mA 0.4 µsIB1 = 10 mA, IB2 = −10 mA

Fall time tf VCC = 200 V, IC = 100 mA 0.7 µsIB1 = 10 mA, IB2 = −10 mA

Storage time tstg VCC = 200 V, IC = 100 mA 3.6 µsIB1 = 10 mA, IB2 = −10 mA

Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and theboard thickness of 1.7 mm for the collector portion

2SD1350, 2SD1350A

2 SJC00218BED

VBE(sat) IC hFE IC fT IE

PC Ta IC VCE VCE(sat) IC

Cob VCB

0 16040 12080 14020 100600

1.2

1.0

0.8

0.6

0.4

0.2

Copper plate at the collectoris more than 1 cm2 in area,1.7 mm in thickness

Col

lect

or p

ower

dis

sipa

tion

PC (

W)

Ambient temperature Ta (°C)

0 121082 640

120

100

80

60

40

20

Ta = 25°C

0.9 mA

0.7 mA

0.5 mA

0.3 mA

0.1 mA

0.8 mA

0.6 mA

0.4 mA

0.2 mA

IB = 1.0 mA

Col

lect

or c

urre

nt I

C (

mA

)

Collector-emitter voltage VCE (V)1 10 100 1000

0.01

0.1

1

10

100IC / IB = 5

25°C

−25°C

Ta = 75°C

Col

lect

or-e

mitt

er s

atur

atio

n vo

ltage

VC

E(s

at)

( V)

Collector current IC (mA)

1 10 100 10000.01

0.1

1

10

100IC / IB = 5

Ta = −25°C

25°C

75°C

Bas

e-em

itter

sat

urat

ion

volta

ge V

BE

(sat

) ( V

)

Collector current IC (mA)

1 10 100 10000

120

100

80

60

40

20

VCE = 5 V

Ta = 75°C

25°C

−25°C

Forw

ard

curr

ent t

rans

fer

ratio

hFE

Collector current IC (mA)− 0.001 − 0.01 − 0.1 −1

0

60

50

40

30

20

10

VCB = 30 VTa = 25°C

Tra

nsiti

on f

requ

ency

fT (

MH

z)

Emitter current IE (A)

10 100 10000

30

25

20

15

10

5

IE = 0f = 1 MHzTa = 25°C

Collector-base voltage VCB (V)

Col

lect

or o

utpu

t cap

acita

nce

(C

omm

on b

ase,

inpu

t ope

n ci

rcui

ted)

Cob

(pF

)

Request for your special attention and precautions in using the technical informationand semiconductors described in this material

(1) An export permit needs to be obtained from the competent authorities of the Japanese Governmentif any of the products or technologies described in this material and controlled under the "ForeignExchange and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this material is limited to showing representative characteris-tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-tual property right or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of theproduct or technologies as described in this material.

(4) The products described in this material are intended to be used for standard applications or generalelectronic equipment (such as office equipment, communications equipment, measuring instru-ments and household appliances).Consult our sales staff in advance for information on the following applications:• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,

combustion equipment, life support systems and safety devices) in which exceptional quality andreliability are required, or if the failure or malfunction of the products may directly jeopardize life orharm the human body.

• Any applications other than the standard applications intended.

(5) The products and product specifications described in this material are subject to change withoutnotice for modification and/or improvement. At the final stage of your design, purchasing, or use ofthe products, therefore, ask for the most up-to-date Product Standards in advance to make sure thatthe latest specifications satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-wise, we will not be liable for any defect which may arise later in your equipment.Even when the products are used within the guaranteed values, take into the consideration ofincidence of break down and failure mode, possible to occur to semiconductor products. Measureson the systems such as redundant design, arresting the spread of fire or preventing glitch arerecommended in order to prevent physical injury, fire, social damages, for example, by using theproducts.

(7) When using products for which damp-proof packing is required, observe the conditions (includingshelf life and amount of time let standing of unsealed items) agreed upon when specification sheetsare individually exchanged.

(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior writtenpermission of Matsushita Electric Industrial Co., Ltd.

2002 JUL

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.