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2SD1126(K)

Silicon NPN Triple Diffused

Application

Power switching

Outline

TO-220AB

1.5 k (Typ)

130 (Typ)

1

2

3

1. Base2. Collector (Flange)3. Emitter1 2 3

ID

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Absolute Maximum Ratings (Ta = 25C)

Item Symbol Ratings Unit

Collector to base voltage V CBO 120 V

Collector to emitter voltage V CEO 120 V

Emitter to base voltage V EBO 7 V

Collector current I C 10 A

Collector peak current I C(peak) 15 A

Collector power dissipation P C*1 50 W

Junction temperature Tj 150 C

Storage temperature Tstg 55 to +150 C

C to E diode forward current I D 10 A

Note: 1. Value at TC = 25 C.

Electrical Characteristics (Ta = 25C)

Item Symbol Min Typ Max Unit Test conditions

Collector to emitter breakdownvoltage

V(BR)CEO 120 V I C = 25 mA, R BE =

Emitter to base breakdownvoltage

V(BR)EBO 7 V I E = 200 mA, I C = 0

Collector cutoff current I CBO 100 A VCB = 120 V, I E = 0

ICEO 10 A VCE = 100 V, R BE =

DC current transfer ratio h FE 1000 2000 V CE = 3 V, I C = 5 A*1

Collector to emitter saturation V CE(sat)1 1.5 V I C = 5 A, I B = 10 mA*1

voltage V CE(sat)2 3.0 V I C = 10 A, I B = 0.1 A*1

Base to emitter saturation V BE(sat)1 2.0 V I C = 5 A, I B = 10 mA*1

voltage V BE(sat)2 3.5 V I C = 10 A, I B = 0.1 A*1

C to E diode forward voltage V D 3.0 V I D = 10 A*1

Turn on time t on 0.8 s I C = 5 A, I B1 = I B2 = 10 mA

Turn off time t off 8.0 s

Note: 1. Pulse test.

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0 50 100 150Case temperature T C ( C)

C o l

l e c t o r p o w e r

d i s s

i p a t i o n

P c

( W )

Maximum Collector Dissipation Curve

20

40

60

P W = 1 m

s 1 s h o t

P W =

1 0 m s 1 s h o t

D C O p e r a t i o n

iC (peak)

IC (max)

0.03

0.1

0.3

1.0

3

30

10

Collector to emitter voltage V CE (V)

C o l

l e c t o r c u r r e n

t I C

( A )

3 10 30 100 300

Area of Safe Operation

TC = 25 C

Collector to emitter voltage V CE (V)

C o l

l e c t o r c u r r e n t

I C ( A )

0

Typical Output Characteristics

1 2 3 4 5

2

4

6

8

10

IB = 0

0.5 mA

0.6

0 . 7 0 . 8

1. 0

1. 5 2. 0

TC = 25 C

30

100

300

1,000

3,000

10,000

30,000

Collector current I C (A)

D C c u r r e n

t t r a n s f e r r a

t i o h F

E

0.3 1.0 3 10 30

DC Current Transfer Ratiovs. Collector Current

T C = 7

5 C

2 5

2 5

VCE = 3 VPulse

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0.01

0.03

0.1

0.3

1.0

3

10

Collector current I C (A)0.3 1.0 3 10 30 C

o l l e c t o r t o e m i t t e r s a t u r a t i o n v o l t a g e V

C E ( s a t )

( V )

B a s e t o e m i t t e r s a t u r a t i o n v o l

t a g e V

B E ( s a t )

( V ) Saturation Voltage vs. Collector Current

VBE (sat)

VCE (sat)

lC /lB = 100

TC = 25 CPulse

200500

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0.5 0.12.54 0.5

0.76 0.1 1 4 . 0

0

. 5

1 5 . 0

0

. 3

2 . 7 9

0 . 2

1 8 . 5

0 . 5

7 . 8

0 . 5

10.16 0.2

2.54 0.5

1.26 0.15

4.44 0.2

2.7 MAX

1.5 MAX

11.5 MAX

9.5

8.0

1 . 2 7 6

. 4 + 0 . 2

0 . 1

3.6+0.1

-0.08

Hitachi CodeJEDECEIAJWeight (reference value)

TO-220ABConformsConforms1.8 g

Unit: mm

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Cautions

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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularlyfor maximum rating, operating supply voltage range, heat radiation characteristics, installationconditions and other characteristics. Hitachi bears no responsibility for failure or damage when usedbeyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeablefailure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or otherconsequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor

products.

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