2sc2412k

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c 2012 ROHM Co., Ltd. All rights reserved.2012.01 - Rev.D

ROHM : VMT3

2SC5658

* Denotes hFE

2SC2412K

2SC4617

ROHM : EMT3

EIAJ : SC-75A

JEDEC : SOT-416

Abbreviated symbol: B*

ROHM : UMT3

EIAJ : SC-70

JEDEC : SOT-323

2SC4081



(1) Base(2) Emitter

(3) Collector

ROHM : SMT3

EIAJ : SC-59

JEDEC : SOT-346


(1) Emitter

(2) Base

(3) Collector

Each lead has same dimensions

0.80

.15

0~0.10.3Min.

1.1

(2)

(1)

2.8

1.6

0.4

(3)

1.92.9

0.950.95

(1) Emitter

(2) Base

(3) Collector

Each lead has same dimensions

1.25

2.1

0.3

0.15

0~0.10.1Min.

(3)

0.9

0.7

0.2

0.65(2

)2.0

1.3

(1)

0.65

(1) Emitter

(2) Base

(3) Collector

0.70

.15

0.1Min.

0.55

0~0.1

0.2

1.6

1.6

1.0

0.3

0.8

(2)0.

5

0.

5

(3)

0.2

(1)

0~0.1

(3)0.32

0.8

1.2

0.13

0.5 0

.22

0.

4

0.4

1.20.80.2

0.15Max.

0.2

(2)

(1)

General purpose transistor (50V, 0.15A)2SC2412K / 2SC4081 / 2SC4617 / 2SC5658

Features Dimensions(Unit : mm)1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)2.

Complements the 2SA1037AK / 2SA1576A /2SA1774H / 2SA2029.

StructureEpitaxial planar typeNPN silicon transistor

Absolu te maximum (Ta=25C)

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector powerdissipation

Junction temperature

Storage temperature

Parameter

VCBO

VCEO

VEBO

PC

Tj

Tstg

60 V

V

V

A

W

C

C

50

7

0.15IC

0.2

0.15

2SC2412K, 2SC4081

2SC4617, 2SC5658

150

55 to +150

Symbol Limits Unit

Electrical characteristics (Ta=25C)

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Output capacitance

Parameter Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE(sat)

fT

Cob

Min.

60

50

7

120

180

2

0.1

0.1

390

0.4

3.5

V IC=50A

IC=1mA

IE=50A

VCB=60V

VEB=7V

VCE=6V, IC=1mA

IC/IB=50mA/5mA

VCE=12V, IE=2mA, f=100MHz

VCE=12V, IE=0A, f=1MHz

V

V

A

A

V

MHz

pF

Typ. Max. Unit Conditions

Transition frequency

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Data Sheet2SC2412K / 2SC4081 / 2SC4617 / 2SC5658

Packaging specifications and hFE

Package

Code

Taping

Basic orderingunit (pieces)

T146 T106

3000 3000

QR

hFE

QR

2SC2412K

2SC4081

TL

3000

T2L

8000

QR2SC4617

QR2SC5658

Type

hFEvalues are classified as follows :

Item Q R

hFE 120 to 270 180 to 390

Electrical characterristic curves

Fig.1 Grounded emitter propagation

characteristics

00.1

0.2

0.5

2

20

50

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

1

5

10

Ta

=100

C

VCE=6V

COLLECTOR

CURRENT:IC(mA)

BASE TO EMITTER VOLTAGE : VBE (V)

25C

55C

Fig.2 Grounded emitter output

characteristics ( )

0

20

40

60

80

100

0.4 0.8 1.2 1.6 2.00

COLLECTOR

CURRENT:IC(mA)

COLLECTOR TO EMITTE R VOLTAGE : VCE (V)

0.05mA

0.10mA

0.15mA

0.25mA

0.30mA

0.35mA

0.20mA

Ta=25C

IB=0A

0.40mA

0.50mA

0.45mA

00

2

8

10

4 8 12 16

4

6

20

IB=0A

Ta=25C

COLLECTOR

CURRENT:IC(mA)

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

3A

6A

9A

12A

15A

18A

21A

24A

27A30A

Fig.3 Grounded emitter output

characteristics ( )

0.2

20

100.5 1 2 5 10 20 50 100 200

50

100

200

500

VCE=5V3V1V

Ta=25C

Fig.4 DC current gain vs.collector current ( )

DC

CURRENT

GAIN

:hFE

COLLECTOR CURRENT : IC (mA)

0.2 0.5 1 2 5 10 20 50 100 200

20

10

50

100

200

500

25C

55C

Ta=100CVCE=5V

Fig.5 DC current gain vs.collector current ( )

DC

CURRENT

GAIN

:hFE


Fig. 6 Collector-emitter saturationvoltage vs. collector current

0.2COLLECTOR

SATURATION

VOLTAGE:VCE(sat)(V)


0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100 200

IC/IB=502010

Ta=25C

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Data Sheet2SC2412K / 2SC4081 / 2SC4617 / 2SC5658

Fig.7 Collector-emitter saturationvoltage vs. collector current ( )

0.2COLLECTORSA

TURATIONVOLTAGE

:VCE(sat)(V)


0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100 200

IC/IB=10

Ta=100C

25C55C

Fig.8 Collector-emitter saturationvoltage vs. collector current ()

COLLECTOR

SATURATION

VOLTAGE:VCE(sat)(V)


0.2

0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100

IC/IB=50

Ta=100C

25C 55C

Fig.9 Gain bandwidth product vs.emitter current

500.5 1 2 5 10 20 50 100

100

200

500

Ta=25CVCE=6V

EMITTER CURRENT : IE (mA)

TRANSITIO

N

FREQUENCY:fT(MHz)

Fig.10 Collector output capacitance vs.collector-base voltageEmitter input capacitance vs.

emitter-base voltage

COLLECTOR TO BASE VOLTAGE : VCB (V)EMITTER TO BASE VOLTAGE : VEB (V)

COLLECTOR

OUTPUT

CAPACITANCE:Cob(pF)

EMITTER

INPUT

CAPACITANCE

:Cib(pF)

0.2 0.5 1 2 5 10 20 50

1

2

5

10

20

Cob

Ta=25Cf=1MHzIE=0AIC=0ACib

Fig.11 Base-collector time constantvs. emitter current

0.2 0.5 1 2 5 10B

ASE

COLLECTOR

TIME

CONSTANT:

Ccrbb'(ps)

EMITTER CURRENT : IE (mA)

10

20

50

100

200

Ta=25Cf=32MHZVCB=6V

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