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28 GBaud DFB Laser Diode Chip

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BH3

Features: Designed for 28 Gb/s NRZ or 56 Gb/s PAM4

Operating temperature -20°C to 85°C

Qualified for non-hermetic packaging

Available Wavelengths: CWDM 1270 nm to 1330 nm

LANWDM 1273.54 nm to 1309.14 nm

Treshold current

Slope efficiency

Slope efficiency ratio

Saturation current

Forward voltage

Series resistance

Front/Back power ratio

Side mode suppression ratio

Wavelength

Wavelength temperature

coefficient

Beam divergence (Horizontal)

Beam divergence (Vertical)

Relative intensity noise

Bandwidth

Relaxation oscillation frequency

Ith

SE

SE0C/SE85C

lsat

Vf

R

Pf/Pb

SMSR

λ

dλ /dt

ΘH

ΘV

RIN

l3db

fr

mA

mW

mW

V

Ohm

dB

nm/°C

degree

degree

dB/Hz1/2

GHz

GHz

0.1

80

7

35

18

15.5

11

5

0.2

100

7

0.09

30

35

21

17.5

17

4

1.6

10

60

-132

Min Typ Max

85°C

25°C

85°C

0°C, 85°C

85°C

Po = 5 mW

Po = 5 mW, 85°C

Po = 5 mW

see table below

FWHM

FWHM

Po = 5 mW

I = 60 mA, 85°C

I = 60 mA, 85°C

CWDM-L0

CWDM-L1

CWDM-L2

CWDM-L3

LWDM-L0

LWDM-L1

LWDM-L2

LWDM-L3

LWDM-L4

LWDM-L5

LWDM-L6

LWDM-L7

0°C to 85°C

I=40 mA, 50°C

1271.50

1291.50

1311.50

1331.50

1273.54

1277.89

1282.26

1286.66

1295.56

1300.05

1304.58

1309.14

nm

nm

nm

nm

nm

nm

nm

nm

nm

nm

nm

nm

Min Typ MaxChannel Symbol Unit

Available Wavelengths

28 GBaud DFB Laser Diode Chip

Parameter Symbol UnitConditions

Electro-Optical CharacteristicsOperating conditions: Top= -20° to 85°C

Conditions

λ

λ

1265.25

1285.25

1305.25

1325.25

1272.49

1276.84

1281.21

1285.61

1294.51

1299.00

1303.53

1308.09

1277.75

1297.75

1317.75

1337.75

1274.49

1278.84

1283.21

1287.61

1296.51

1301.00

1305.53

1310.09

2/22/3

2/22/3

Operating current

Modulation swing

Reverse voltage

60

80

30

2

mA

mA

mA

V

Parameter Max Rating Unit

Chip width

Chip length

Chip thickness

Bond pad width

Bond pad length

230

130

80

250

150

85

65

60

270

170

90

µm

µm

µm

µm

µm

Parameter Min Typ Max Unit

Absolute Maximum Ratings

Chip Dimensions

28 GBaud DFB Laser Diode Chip

Symbol Conditions

lop

VR

T< 85°C

T= 70-85°C

Case temperature

Storage Temperature

ESD HBM

-10 to +85

-40 to +100

150

°C

°C

V

Parameter Max Rating Unit

Environmental Exposure Ratings

Symbol Conditions

Tc

Tstg

T< 85°C

T= 70-85°C

Anode electrode (bond pad)

0.0850.25

0.25 0.10

Top view Side view

All dimensions in mm

Cathode electrode on bottom surface of die (Au)

3/3

3/3