eupec · 2 ihd06n60ra soft switching series thermal resistance parameter symbol conditions max....

1

IHD06N60RA

Soft Switching Series

Rev. 1.3 2008-07-29

Reverse conducting IGBT with monolithic body diode

• Powerful monolithic body diode with low forward voltage designed for soft commutation only• TrenchStop® technology applications offers: - very tight parameter distribution - high ruggedness, temperature stable behavior - low VCEsat

- easy parallel switching capability due to positive temperature coefficient in VCEsat

• Low EMI• Qualified according to JEDEC for target applications• Pb-free lead plating; RoHS compliant; solder temperature 260°C, MSL3• Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/

G

C

E

TypeTypeTypeType V†ŠV†ŠV†ŠV†Š I†I†I†I† V†ŠñÙÈÚò TÎ=25°CV†ŠñÙÈÚò TÎ=25°CV†ŠñÙÈÚò TÎ=25°CV†ŠñÙÈÚò TÎ=25°C TÎÑÈàTÎÑÈàTÎÑÈàTÎÑÈà MarkingMarkingMarkingMarking PackagePackagePackagePackage

IHD06N60RA 600V 6A 1.6V 175°C H06N60RA PG-TO252-3

Maximum ratings

Parameter Symbol Value Unit

Collector-emitter voltage V†Š 600 V

DC collector current, limited by TÎÑÈàT† = 25°CT† = 100°C

I† 12.06.0

A

Pulsed collector current, tÔ limited by TÎÑÈà I†ÔÛÐÙ 18.0 A

Turn off safe operating area V†Š = 600V, TÎ= 175°C - 18.0 A

Diode forward current, limited by TÎÑÈàT† = 25°CT† = 100°C

IŒ 12.06.0

A

Diode pulsed current, tÔ limited by TÎÑÈà IŒÔÛÐÙ 18.0 A

Gate-emitter voltage V•Š ±20 V

Short circuit withstand timeV•Š = 15.0V, V†† ù 250V, TÎ ù 125°CAllowed number of short circuits < 1000Time between short circuits: ú 1.0s

t»† 10 µs

Power dissipation T† = 25°C PÚÓÚ 88.0 W

Operating junction temperature TÎ -40...+175 °C

Storage temperature TÙÚÃ -40...+175 °C

Soldering temperature,for 10 s (according to JEDEC J-STA-020A) PG-TO252-3 260 °C

2

IHD06N60RA


Rev. 1.3 2008-07-29

Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,junction - case RÚÌœ† 1.70 K/W

Diode thermal resistance,junction - case RÚÌœ†‡ 1.70 K/W

Thermal resistance, min. footprintjunction - ambient

RÚÌœƒ PG-TO252-3 75 K/W

Thermal resistance, 6cm² Cu onPCBjunction - ambient

RÚÌœƒ PG-TO252-3 50 K/W

Electrical Characteristic, at TÎ = 25°C, unless otherwise specifiedElectrical Characteristic, at TÎ = 25°C, unless otherwise specifiedElectrical Characteristic, at TÎ = 25°C, unless otherwise specifiedElectrical Characteristic, at TÎ = 25°C, unless otherwise specified

Value

min. typ. max.Parameter Symbol Conditions Unit

Static Characteristic

Collector-emitter breakdown voltage Vñ…çò†Š» V•Š = 0V, I† = 0.20mA 600 - - V

Collector-emitter saturation voltage V†ŠñÙÈÚò

V•Š = 15.0V, I† = 6.0ATÎ = 25°CTÎ = 150°CTÎ = 175°C

---

1.451.701.75

1.90--

V

Diode forward voltage VŒ

V•Š = 0V, IŒ = 6.0ATÎ = 25°CTÎ = 150°CTÎ = 175°C

---

1.551.651.65

1.90-

V

Gate-emitter threshold voltage V•ŠñÚÌò I† = 0.18mA, V†Š = V•Š 4.1 4.9 5.7 V

Zero gate voltage collector current I†Š»V†Š = 600V, V•Š = 0VTÎ = 25°CTÎ = 175°C

--

--

40.0600.0

µA

Gate-emitter leakage current I•Š» V†Š = 0V, V•Š = 20V - - 100 nA

Transconductance gËÙ V†Š = 20V, I† = 6.0A - 3.7 - S

Integrated gate resistor R•ÍÒÚ none Â

Electrical Characteristic, at TÎ = 25°C, unless otherwise specifiedElectrical Characteristic, at TÎ = 25°C, unless otherwise specifiedElectrical Characteristic, at TÎ = 25°C, unless otherwise specifiedElectrical Characteristic, at TÎ = 25°C, unless otherwise specified

Value


Dynamic Characteristic

Input capacitance CÍÙÙ - 370 -

Output capacitance CÓÙÙ - 28 -

Reverse transfer capacitance CØÙÙ - 11 -

V†Š = 25V, V•Š = 0V, f = 1MHz pF

Gate charge Q•ÈÚþ V†† = 480V, I† = 6.0A, V•Š = 15V

- 42.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LŠ PG-TO252-3 - 7.0 - nH

3

IHD06N60RA


Rev. 1.3 2008-07-29

Switching Characteristic, Inductive Load, at TÎ = 25°CSwitching Characteristic, Inductive Load, at TÎ = 25°CSwitching Characteristic, Inductive Load, at TÎ = 25°CSwitching Characteristic, Inductive Load, at TÎ = 25°C

Value


IGBT Characteristic

Turn-off delay time tÁñÓËËò - 125 - ns

Fall time tË - 145 - ns

Turn-off energy EÓËË - 0.15 - mJ

TÎ = 25°C,V†† = 400V, I† = 6.0A,V•Š = 0.0/15.0V,R• = 14.7Â, Lÿ = 60nH,Cÿ = 40pFLÿ, Cÿ from Fig. E

Switching Characteristic, Inductive Load, at TÎ = 175°CSwitching Characteristic, Inductive Load, at TÎ = 175°CSwitching Characteristic, Inductive Load, at TÎ = 175°CSwitching Characteristic, Inductive Load, at TÎ = 175°C

Value


IGBT Characteristic

Turn-off delay time tÁñÓËËò - 165 - ns

Fall time tË - 160 - ns

Turn-off energy EÓËË - 0.25 - mJ

TÎ = 175°C,V†† = 400V, I† = 6.0A,V•Š = 0.0/15.0V,R• = 14.7Â, Lÿ = 60nH,Cÿ = 40pFLÿ, Cÿ from Fig. E

4

IHD06N60RA


Rev. 1.3 2008-07-29

Figure 1.Figure 1.Figure 1.Figure 1. Collector current as a function of switchingCollector current as a function of switchingCollector current as a function of switchingCollector current as a function of switchingfrequencyfrequencyfrequencyfrequency(TÎù175°C, D=0.5, V†Š=400V, V•Š=15/0V,R•=14.7Â)

f, SWITCHING FREQUENCY [Hz]

I†, COLLECTOR C

URRENT [A]

1E+4 1E+5 1E+60.0

2.5

5.0

7.5

10.0

12.5

15.0

17.5

20.0

T†=80°

T†=110°

Figure 2.Figure 2.Figure 2.Figure 2. Forward bias safe operating areaForward bias safe operating areaForward bias safe operating areaForward bias safe operating area(D=0, T†=25°C, TÎù175°C; V•Š=15V)

V†Š, COLLECTOR-EMITTER VOLTAGE [V]

I†, COLLECTOR C

URRENT [A]

1 10 100 10000.1

1

10

tÔ=1µs

5µs

20µs

100µs

1ms

10ms

DC

Figure 3.Figure 3.Figure 3.Figure 3. Power dissipation as a function of casePower dissipation as a function of casePower dissipation as a function of casePower dissipation as a function of casetemperaturetemperaturetemperaturetemperature(TÎù175°C)

T†, CASE TEMPERATURE [°C]

PÚÓÚ, POW

ER D

ISSIP

ATIO

N [W

]

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

90

100

Figure 4.Figure 4.Figure 4.Figure 4. Collector current as a function of caseCollector current as a function of caseCollector current as a function of caseCollector current as a function of casetemperaturetemperaturetemperaturetemperature(V•Šú15V, TÎù175°C)

T†, CASE TEMPERATURE [°C]

I†, COLLECTOR C

URRENT [A]

25 50 75 100 125 150 1750

3

6

9

12

15

18

5

IHD06N60RA


Rev. 1.3 2008-07-29

Figure 5.Figure 5.Figure 5.Figure 5. Typical output characteristicTypical output characteristicTypical output characteristicTypical output characteristic(TÎ=25°C)


I†, COLLECTOR C

URRENT [A]

0 1 2 3 4 5 60

3

6

9

12

15

18

V•Š=20V

15V

12V

10V

9V

7V

Figure 6.Figure 6.Figure 6.Figure 6. Typical output characteristicTypical output characteristicTypical output characteristicTypical output characteristic(TÎ=175°C)


I†, COLLECTOR C

URRENT [A]

0 1 2 3 4 5 60

3

6

9

12

15

18

V•Š=20V

15V

12V

10V

9V

7V

Figure 7.Figure 7.Figure 7.Figure 7. Typical transfer characteristicTypical transfer characteristicTypical transfer characteristicTypical transfer characteristic(V†Š=20V)

V•Š, GATE-EMITTER VOLTAGE [V]

I†, COLLECTOR C

URRENT [A]

2 4 6 8 10 120

3

6

9

12

15

18

25°CTÎ=175°C

Figure 8.Figure 8.Figure 8.Figure 8. Typical collector-emitter saturation voltageTypical collector-emitter saturation voltageTypical collector-emitter saturation voltageTypical collector-emitter saturation voltageas a function of junction temperatureas a function of junction temperatureas a function of junction temperatureas a function of junction temperature(V•Š=15V)

TÎ, JUNCTION TEMPERATURE [°C]

V†Š

ñÙÈÚò, C

OLLECTOR-E

MIT

TER S

ATURATIO

N [A]

-50 -25 0 25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

I†=3AI†=6AI†=12A

6

IHD06N60RA


Rev. 1.3 2008-07-29

Figure 9.Figure 9.Figure 9.Figure 9. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofcollector currentcollector currentcollector currentcollector current(inductive load, TÎ=175°C, V†Š=400V,V•Š=15/0V, R•=14.7Â,Dynamic test circuitin Figure E)

I†, COLLECTOR CURRENT [A]

t, SW

ITCHIN

G T

IMES [ns]

2 4 6 8 10 1210

100

1000

tÁñÓËËòtË

Figure 10.Figure 10.Figure 10.Figure 10. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofgate resistorgate resistorgate resistorgate resistor(inductive load, TÎ=175°C, V†Š=400V,V•Š=15/0V, I†=6A,Dynamic test circuit inFigure E)

R•, GATE RESISTOR [Â]

t, SW

ITCHIN

G T

IMES [ns]

0 10 20 30 40 50 60 7010

100

1000

tÁñÓËËòtË

Figure 11.Figure 11.Figure 11.Figure 11. Typical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofTypical switching times as a function ofjunction temperaturejunction temperaturejunction temperaturejunction temperature(inductive load, V†Š=400V, V•Š=15/0V,I†=6A, R•=14.7Â,Dynamic test circuit inFigure E)

T•, JUNCTION TEMPERATURE [°C]

t, SW

ITCHIN

G T

IMES [ns]

25 50 75 100 125 150 17510

100

1000

tÁñÓËËòtË

Figure 12.Figure 12.Figure 12.Figure 12. Gate-emitter threshold voltage as aGate-emitter threshold voltage as aGate-emitter threshold voltage as aGate-emitter threshold voltage as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature(I†=0.18mA)

R•, JUNCTION TEMPERATURE [°C]

V•ŠñÚÌò, GATE-E

MIT

TER T

HRESHOLD V

OLTAGE [V]

-50 -25 0 25 50 75 100 125 150 1752

3

4

5

6

typ.

7

IHD06N60RA


Rev. 1.3 2008-07-29

Figure 13.Figure 13.Figure 13.Figure 13. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of collector currentfunction of collector currentfunction of collector currentfunction of collector current(inductive load, TÎ=175°C, V†Š=400V,V•Š=15/0V, R•=14.7Â,Dynamic testcircuit in Figure E)

I†, COLLECTOR CURRENT [A]

E, SW

ITCHIN

G E

NERGY L

OSSES [m

J]

0 3 6 9 12 150.0

0.1

0.2

0.3

0.4

EÓËË

Figure 14.Figure 14.Figure 14.Figure 14. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of gate resistorfunction of gate resistorfunction of gate resistorfunction of gate resistor(inductive load, TÎ=175°C, V†Š=400V,V•Š=15/0V, R•=14.7Â,Dynamic testcircuit in Figure E)

R•, GATE RESISTOR [Â]

E, SW

ITCHIN

G E

NERGY L

OSSES [m

J]

0 10 20 30 40 50 60 700.0

0.1

0.2

0.3

0.4

EÓËË

Figure 15.Figure 15.Figure 15.Figure 15. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature(inductive load, V†Š=400V, V•Š=15/0V,I†=6A, R•=14.7Â,Dynamic test circuit inFigure E)


E, SW

ITCHIN

G E

NERGY L

OSSES [m

J]

0 25 50 75 100 125 150 1750.0

0.1

0.2

0.3

0.4

EÓËË

Figure 16.Figure 16.Figure 16.Figure 16. Typical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as aTypical switching energy losses as afunction of collector emitter voltagefunction of collector emitter voltagefunction of collector emitter voltagefunction of collector emitter voltage(inductive load, TÎ=175°C, V•Š=15/0V,I†=6A, R•=14.7Â,Dynamic test circuit inFigure E)


E, SW

ITCHIN

G E

NERGY L

OSSES [m

J]

200 300 400 500 6000.0

0.1

0.2

0.3

0.4

EÓËË

8

IHD06N60RA


Rev. 1.3 2008-07-29

Figure 17.Figure 17.Figure 17.Figure 17. Typical gate chargeTypical gate chargeTypical gate chargeTypical gate charge(I†=6A)

Q•Š, GATE CHARGE [nC]

V•Š, G

ATE-E

MIT

TER V

OLTAGE [V]

0 10 20 30 40 500

4

8

12

16

20

120V480V

Figure 18.Figure 18.Figure 18.Figure 18. Typical capacitance as a function ofTypical capacitance as a function ofTypical capacitance as a function ofTypical capacitance as a function ofcollector-emitter voltagecollector-emitter voltagecollector-emitter voltagecollector-emitter voltage(V•Š=0V, f=1MHz)


C, CAPACIT

ANCE [pF]

0 5 10 15 20 25 3010

100

1000

CÍÙÙCÓÙÙCØÙÙ

Figure 19.Figure 19.Figure 19.Figure 19. Short circuit withstand time as a functionShort circuit withstand time as a functionShort circuit withstand time as a functionShort circuit withstand time as a functionof gate-emitter voltageof gate-emitter voltageof gate-emitter voltageof gate-emitter voltage(V†Šù250V, start at TÎù125°C)

V•Š, GATE-EMITTER VOLTAGE [V]

t»†,

SHORT C

IRCUIT

WIT

HSTAND T

IME [µs]

10 12 14 16 18 200

5

10

15

20

25

Figure 20.Figure 20.Figure 20.Figure 20. IGBT transient thermal resistanceIGBT transient thermal resistanceIGBT transient thermal resistanceIGBT transient thermal resistance(D=tÔ/T)

tÔ, PULSE WIDTH [s]

ZÚÌœ†

, TRANSIE

NT T

HERM

AL R

ESIS

TANCE [K/W

]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i: rÍ[K/W]: Í[s]:

1 0.2483 4.7E-5

2 0.5877 5.0E-4

3 0.4533 4.8E-3

4 0.3837 0.05047

τ

9

IHD06N60RA


Rev. 1.3 2008-07-29

Figure 21.Figure 21.Figure 21.Figure 21. Diode transient thermal impedance as aDiode transient thermal impedance as aDiode transient thermal impedance as aDiode transient thermal impedance as afunction of pulse widthfunction of pulse widthfunction of pulse widthfunction of pulse width(D=tÔ/T)

tÔ, PULSE WIDTH [s]

ZÚÌœ†

, TRANSIE

NT T

HERM

AL R

ESIS

TANCE [K/W

]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i: rÍ[K/W]: Í[s]:

1 0.2483 4.7E-5

2 0.5877 5.0E-4

3 0.4533 4.8E-3

4 0.3837 0.05047

τ

Figure 22.Figure 22.Figure 22.Figure 22. Typical diode forward current as aTypical diode forward current as aTypical diode forward current as aTypical diode forward current as afunction of forward voltagefunction of forward voltagefunction of forward voltagefunction of forward voltage

VŒ, FORWARD VOLTAGE [V]

IŒ, FORW

ARD C

URRENT [A]

0 1 2 3 40

3

6

9

12

15

18TÎ=25°C, U•=0V

TÎ=175°C, U•=0V

TÎ=175°C, U•=4V

TÎ=175°C, U•=5V

TÎ=175°C, U•=6V

TÎ=175°C, U•=7V

TÎ=175°C, U•=8V

TÎ=175°C, U•=9V

TÎ=175°C, U•=10V

TÎ=175°C, U•=12V

TÎ=175°C, U•=16V

Figure 23.Figure 23.Figure 23.Figure 23. Typical diode forward voltage as aTypical diode forward voltage as aTypical diode forward voltage as aTypical diode forward voltage as afunction of junction temperaturefunction of junction temperaturefunction of junction temperaturefunction of junction temperature


VŒ, F

ORW

ARD V

OLTAGE [V]

25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0

I†=3AI†=6AI†=12A

10

IHD06N60RA


Rev. 1.3 2008-07-29

PG- TO252-3-1 /-11 /-21 /-311 /-341

0.085

0.025

0.018

0.026

0.018

0.000

5.50

MAX

2.41

0.15

1.15

0.60

0.89

0.98

MIN

0.217

MAX

0.006

0.095

0.035

0.024

0.045

0.039

4.57

2.29

1.10

1.18

0.51

6.30

0.90

5.02

9.40

6.40

4.70

5.97

10.50

2.10

5.70

5.66

3

5.00

MIN

2.16

0.64

0.46

0.65

0.46

0.00

0.046

0.020

0.035

0.198

0.252

0.185

0.235

0.370

0.413

0.248

0.083

0.224

0.223

0.0431.30

1.70

1.00

5.21

5.84

6.50

6.22

6.73

1.25

10.48

10.70

2.30

5.90

5.86

0.051

0.180

0.090

3

0.067

0.205

0.039

0.230

0.265

0.049

0.245

0.413

0.421

0.256

0.091

0.232

0.231

0.197

19-10-2007

03

Z8B00003328

derived from

11

IHD06N60RA


Rev. 1.3 2008-07-29

12

IHD06N60RA


Rev. 1.3 2008-07-29

Published byInfineon Technologies AG81726 Munich, Germany81726 München, Germany© 2008 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.With respect to any examples or hints given herein, any typical values stated herein and/or any information regardingthe application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,including without limitation, warranties of non-infringement of intellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest InfineonTechnologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types inquestion, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used inlife-support devices or systems only with the express written approval of Infineon Technologies, if a failure of suchcomponents can reasonably be expected to cause the failure of that life-support device or system or to affect the safetyor effectiveness of that device or system. Life support devices or systems are intended to be implanted in the humanbody or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that thehealth of the user or other persons may be endangered.

eupec · 2 ihd06n60ra soft switching series thermal resistance parameter symbol conditions max....

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