16mbit, 512kx32 cmos s-ram module - elisramw-elisra.com/microel-elisra/pdf/sram/mes51232(hs).pdf ·...
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MES51232XXXXX High Speed 16 Mbit CMOS S-RAM Module
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: [email protected]
December , 2003 Rev. A 1 of 14
16Mbit, 512KX32 CMOS S-RAM MODULE Features
Access Times: 17 and 20ns Industrial and Military Screening Package Options: User Configurable as 512Kx32,
66-Pin Ceramic PGA 1.080" SQ 1024Kx16, 2048Kx8 66-Pin Ceramic PGA 1.173" SQ TTL Compatible Input/Output 68-Lead Ceramic QFP 0.88" SQ Single 5V (±10%) Power Fit & Function JEDEC 68-CQFJ Data Retention (Low Power Version Only) or 68-PLCC
Product Description The MES51232 is a 16 megabit High Speed Static Ram MCM. Each MCM is constructed from four 512KX8 SRam assembled in a multilayered cofired ceramic package, designed with power and ground planes for lower noise and better ground bounce. These MCMs are available in 17ns and 20ns versions. Low Power versions are also available. Block Diagram
MES51232XXXXX High Speed 16 Mbit CMOS S-RAM Module
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: [email protected]
December , 2003 Rev. A 2 of 14
Pin Names Truth Table (H=VIH, L=VIL, X=Don't Care)
Pin Name Pin Function OE# WE# CS# I/O Mode
A0÷A18 Address Inputs X X H Hi-Z Standby
DQ0÷DQ31 Data Inputs/Outputs L H L DOUT Read
CS1#÷CS4# Chip Selects X L L DIN Write
WE1#÷WE4# Write Enables H H L Hi-Z Out Disable
OE# Output Enable
GND Ground
VCC Power (+5V ±10%)
NC No Connection Note: # Symbol means "Active Low" Signal Pin Configuration for 66-Pin PGA (G7,G3) (Top View)
A B C F G H
1 DQ8 WE2# DQ15 DQ24 VCC DQ31
2 DQ9 CS2# DQ14 DQ25 CS4# DQ30
3 DQ10 GND DQ13 DQ26 WE4# DQ29
4 A13 DQ11 DQ12 A6 DQ27 DQ28
5 A14 A10 OE# A7 A3 A0
6 A15 A11 A18 NC A4 A1
7 A16 A12 WE1# A8 A5 A2
8 A17 VCC DQ7 A9 WE3# DQ23
9 DQ0 CS1# DQ6 DQ16 CS3# DQ22
10 DQ1 NC DQ5 DQ17 GND DQ21
11 DQ2 DQ3 DQ4 DQ18 DQ19 DQ20
MES51232XXXXX High Speed 16 Mbit CMOS S-RAM Module
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: [email protected]
December , 2003 Rev. A 3 of 14
Pin Numbers & Functions
Pin # Function Pin # Function Pin # Function Pin # Function 1 GND 18 GND 35 OE# 52 GND 2 CS3# 19 DQ8 36 CS2# 53 DQ23 3 A5 20 DQ9 37 A17 54 DQ22 4 A4 21 DQ10 38 WE2# 55 DQ21 5 A3 22 DQ11 39 WE3# 56 DQ20 6 A2 23 DQ12 40 WE4# 57 DQ19 7 A1 24 DQ13 41 A18 58 DQ18 8 A0 25 DQ14 42 NC 59 DQ17 9 NC 26 DQ15 43 NC 60 DQ16 10 DQ0 27 VCC 44 DQ31 61 VCC 11 DQ1 28 A11 45 DQ30 62 A10 12 DQ2 29 A12 46 DQ29 63 A9 13 DQ3 30 A13 47 DQ28 64 A8 14 DQ4 31 A14 48 DQ27 65 A7 15 DQ5 32 A15 49 DQ26 66 A6 16 DQ6 33 A16 50 DQ25 67 WE1# 17 DQ7 34 CS1# 51 DQ24 68 CS4# Pin Configuration for 68-Lead CQFP (S)
MES51232XXXXX High Speed 16 Mbit CMOS S-RAM Module
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: [email protected]
December , 2003 Rev. A 4 of 14
Absolute Maximum Ratings
Item Rating
Supply Voltage Relative to GND -0.5V to +7.0V
Voltage on Any Pin Relative to GND -0.5V to VCC +0.5V
Operating Temperature -55°C to +125°C
Storage Temperature -65°C to +150°C
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Voltage VCC 4.5 5.5 V
Input High Voltage VIH 2.2 VCC +0.3 V
Input Low Voltage VIL -0.5 +0.8 V
Operating (Military) TA -55 +125 °C
Temperature (Industrial) -40 +85 °C
Capacitance (TA = +25°C, VIN = 0V, f = 1.0 MHz)
Description Symbol Limits Unit
Min Max
OE# Capacitance COE 50 pF
WE#1 to WE#4 Capacitance CWE 20 pF
CS#1 to CS#4 Capacitance CCS 20 pF
DQ0 to DQ31 Capacitance CI/O 20 pF
A0 to A18 Capacitance CAD 50 pF These parameters are guaranteed, but not tested.
MES51232XXXXX High Speed 16 Mbit CMOS S-RAM Module
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: [email protected]
December , 2003 Rev. A 5 of 14
DC Characteristics (Vcc = 5V)
Parameter Symbol Min Max Units
Input Leakage Current ILI(1) -10 10 µA
Output Leakage Current ILO(2) -10 10 µA
Output Low Voltage VOL(3) 0.4 V
Output High Voltage VOH(4) 2.4 V
Standby Supply Current ISB(5) 17ns 40 mA
20ns 40
Dynamic Operating Current ICC(6) 17ns 640 mA (32 bit operation mode) 20ns 640
Notes: (1) VCC = Max, VI/O = VCC to GND (2) VI/O = VCC to GND, CS# ≥ VIH, OE# ≥ VIH
(3) VCC = Min, IOL = +8mA (4) VCC = Min, IOH = -4mA (5) CS # = VIH, OE # = VIH, VCC = Max, f = 5.0 MHz (6) VCC = Max, CS# = VIL, OE# = VIH, f = 5.0 MHz
MES51232XXXXX High Speed 16 Mbit CMOS S-RAM Module
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: [email protected]
December , 2003 Rev. A 6 of 14
AC Characteristics Write Cycle
Parameter Symbol 17ns 20ns Limits Units
Write Cycle Time TAVAV 17 20 min ns
Address Set-up Time TAVWL 0 0 min ns
Address Valid to End of Write TAVWH 13 15 min ns
Data Valid to End of Write TDVWH 10 15 min ns
Chip Select Low to End of Write TELWH 13 15 min ns
Write Pulse Width TWLWH 13 15 min ns
Address Hold from Write End TWHAX 0 0 min ns
Data Hold Time TWHDX 0 0 min ns
Write Low to High Z TWLQZ * 10 10 max ns
Output Active from End of Write TWHQX * 4 5 min ns
Read Cycle
Parameter Symbol 17ns 20ns Limits Units
Read Cycle Time TAVAV 17 20 min ns
Address Access Time TAVQV 17 20 max ns
Output Hold from Address Change TAVQX 4 4 min ns
Chip Select Access Time TELQV 17 20 max ns
Output Enable to Output Valid TGLQV 10 10 max ns
Chip Select to Output in Low Z TELQX* 4 4 min ns
Chip Disable to Output in High Z TEHQZ* 10 10 max ns
Output Enable to Output in Low Z TGLQX* 0 0 min ns
Output Disable to Output in High Z TGHQZ* 8 8 max ns (*) - Parameter is guaranteed, but not tested.
MES51232XXXXX High Speed 16 Mbit CMOS S-RAM Module
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: [email protected]
December , 2003 Rev. A 7 of 14
Timing Waveforms of Write Cycle
MES51232XXXXX High Speed 16 Mbit CMOS S-RAM Module
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: [email protected]
December , 2003 Rev. A 8 of 14
Timing Waveforms of Read Cycle
MES51232XXXXX High Speed 16 Mbit CMOS S-RAM Module
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: [email protected]
December , 2003 Rev. A 9 of 14
AC Test Conditions
Item Conditions Input Pulse Levels GND to 3.0V Input Rise and Fall Times 5ns Input Timing Reference Level 1.5V Output Timing Reference Level 1.5V Output Load: 17ns to 70ns 85ns and up
1 TTL Load, CL=30pF 1 TTL Load, CL=100pF
Note: For TWHQX, TWLQZ, TELQX, TEHQZ, TGLQX and TGHQZ CL = 5pF
Data Retention Characteristics (Over Operating Temp Range) For Low Power Version Only(1) Test Conditions: GND = 0V, VCC = 3V, CE# ≥ VCC-0.2V, VIH ≥ VCC - 0.2V, VIL ≤ 0.2V.
Characteristic Symbol Min Typ. Max Unit VCC for Data Retention VDR 2 V D.R Quiescent Current ICCDR 2000(2) 8000(1)(2) µA Chip Disable to D.R Time TCDR 0 nSec Operation Recovery Time TR TAVAV nSec
(1) Contact Factory (2) Lower D.R Currents are available upon request
Data Retention (CE# - Controlled)
MES51232XXXXX High Speed 16 Mbit CMOS S-RAM Module
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: [email protected]
December , 2003 Rev. A 10 of 14
Outline Drawing for 66-Pin Ceramic PGA (G7)
MES51232XXXXX High Speed 16 Mbit CMOS S-RAM Module
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: [email protected]
December , 2003 Rev. A 11 of 14
Outline Drawing for 66-Pin Ceramic PGA (G3)
MES51232XXXXX High Speed 16 Mbit CMOS S-RAM Module
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: [email protected]
December , 2003 Rev. A 12 of 14
Outline Drawing for 68-Lead Ceramic QFP (S)
MES51232XXXXX High Speed 16 Mbit CMOS S-RAM Module
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: [email protected]
December , 2003 Rev. A 13 of 14
Ordering Information (Standard Military Screened Products*)
Model Number
Speed
Package
MES51232G717M 17ns CPGA MES51232G720M 20ns CPGA MES51232G317M 17ns CPGA MES51232G320M 20ns CPGA MES51232S17M 17ns CQFP MES51232S20M 20ns CQFP
(*) - Contact Elisra for additional designs
MES51232XXXXX High Speed 16 Mbit CMOS S-RAM Module
Elisra Microelectronics TEL: 972-3-6175015 Fax: 972-3-6175650 Email: [email protected]
December , 2003 Rev. A 14 of 14
Part Number Breakdown