12 月 10 日(周三)下午 13:30 ,西主楼 3-102 报告人: prof. alex huang north...

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12 月 10 月 月月月 月月 () 13:30 月月 ,西 3-102 月月月Prof. Alex Huang North Carolina State University, USA Ultra High Voltage SiC Power Devices and Their Applications in Future DC and AC Power Grid Abstract: Wide bandgap semiconductor material based power devices offer the prospect of extending the power electronics applications to higher voltage, high frequency and high temperature. The focus of the talk will be on the status and capability of ultra-high voltage (>10kV) SiC power devices and their applications. The high voltage and high frequency capability of devices such as SiC MOSFET/JFET/BJT will provide 50 to 100 times improvement over silicon power devices such as IGBT, and will therefore result in revolutionary change in medium voltage power electronics technology. SiC based solid state transformer (SST) is being developed by Dr. Huang’s group as a key 月月月月月月月月 月月月月月月月

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Page 1: 12 月 10 日(周三)下午 13:30 ,西主楼 3-102 报告人: Prof. Alex Huang North Carolina State University, USA Ultra High Voltage SiC Power Devices and Their Applications

12月 10日(周三)下午 13:30,西主楼 3-102

报告人: Prof. Alex HuangNorth Carolina State University, USA

Ultra High Voltage SiC Power Devices and Their Applications in Future DC and AC Power Grid

Abstract: Wide bandgap semiconductor material based power devices offer the prospect of extending the power electronics applications to higher voltage, high frequency and high temperature. The focus of the talk will be on the status and capability of ultra-high voltage (>10kV) SiC power devices and their applications. The high voltage and high frequency capability of devices such as SiC MOSFET/JFET/BJT will provide 50 to 100 times improvement over silicon power devices such as IGBT, and will therefore result in revolutionary change in medium voltage power electronics technology. SiC based solid state transformer (SST) is being developed by Dr. Huang’s group as a key application example of medium voltage power electronics. Another example is medium or high voltage circuit breakers that take advantage of SiC thyristor’s ultra-high voltage and high temperature capabilities.

《电力电子技术专题》课程外邀报告四:

Page 2: 12 月 10 日(周三)下午 13:30 ,西主楼 3-102 报告人: Prof. Alex Huang North Carolina State University, USA Ultra High Voltage SiC Power Devices and Their Applications

• Prof. Alex Huang 简介( 1)• Dr. Alex Huang received his B.Sc. degree from Zhejiang University, China in

1983 and his M.Sc. degree from Chengdu Institute of Radio Engineering,

China in 1986. He received his Ph.D. from Cambridge University, UK in 1992.

• From 1994 to 2004, he was a founding member and a professor of Center for

Power Electronics System (an NSF ERC) at Virginia Tech. Since 2004, he

has been a professor of electrical engineering at North Carolina State

University and he is currently the Progress Energy Distinguished Professor of

Electrical and Computer Engineering.

• He established NCSU’s Advanced Transportation Energy Center (ATEC) as

well as the NSF FREEDM Systems ERC in 2008. As part of the FREEDM

System concept, he developed the original concept of Energy Internet with

the Solid State Transformer serving as an Energy Router. Today, FREEDM

Systems ERC is one of the most successful ERCs in the USA with support

from more than 52 companies. Dr. Huang is also the lead PI and visionary

leader behind NCSU’s recent success in establishing the next generation

Wide bandgap power electronics manufacturing innovation institute.

Page 3: 12 月 10 日(周三)下午 13:30 ,西主楼 3-102 报告人: Prof. Alex Huang North Carolina State University, USA Ultra High Voltage SiC Power Devices and Their Applications

• Prof. Alex Huang 简介( 2)• Dr. Huang’s research areas are power semiconductor devices, power

management integrated circuits, power electronics and its emerging

applications such as those in future electric power delivery and management

systems.

• A very active and productive research leader, Dr. Huang has mentored and

graduated more than 69 Ph.D. and master students and has generated more

than $200m external R&D fundings in the last 20 years. Dr. Huang has

published more than 400 papers in journals and conference proceedings, and

holds 20 US patents.

• Dr. Huang is the inventor and developer of the ETO thyristor technology. Dr.

Huang is a fellow of IEEE and Zhejiang University Qiushi Chair Professor,

and the recipient of the prestigious 2003 R&D 100 award and 2011 MIT

Technology Magazine awards.