100w 1st generation laser-produced plasma source system for … · 2013-03-13 · clean power...
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1
100W 1st generation Laser-Produced Plasma
source system for HVM EUV lithography
Acknowledgments
This work was partly supported by the New Energy and Industrial
Technology Development Organization -NEDO- Japan.
Hakaru Mizoguchi
Gigaphoton
3-25-1 Shinomiya, Hiratsuka, Japan
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Outline
1. Introduction
2. Engineering Test source
� 1st Generation (ETS) device: System experiment
– Latest experimental data
– Critical issues� 10Hz device: Critical issue experiment
– Perfect vaporization: Important step to magnetic mitigation
– Pre-pulse and high CE
3. HVM EUV light source� Product roadmap
� 2nd Generation device: Development status
– Configuration
– Latest status
4. Summary
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Outline
1. Introduction
2. Engineering Test source
� 1st Generation (ETS) device: System experiment
– Latest experimental data
– Critical issues� 10Hz device: Critical issue experiment
– Perfect vaporization: Important step to magnetic mitigation
– Pre-pulse and high CE
3. HVM EUV light source� Product roadmap
� 2nd Generation device: Development status
– Configuration
– Latest status
4. Summary
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P4
1st Mid
term
2004/9
2nd Mid term
2006/3
EUVA -1
final
2008/3
EUVA-2
final
~~~~ 2011/3
Gigaphoton
2011/4 ~~~~
EUV Power
(IF)
Stability
Laser
Laser freq.
CE (source)
Target
5.7W 1)
---
YAG:1.5k
W
10kHz
0.9%
Xe-Jet
10W 1)
σσσσ<±±±±10%
CO2:2.6kW
100kHz
0.9%
SnO2
choroid
liquid jet
50W 2)
σσσσ <±±±±5%
CO2:
7.5kW
100kHz
2.5%
Sn-Droplet
1st Generation
(ETS)
110W 2) /140W 3)
3σσσσ<±±±±0.3%
CO2: 10kW
100kHz
4%
Sn-Droplet
2nd Generation
(proto/GL200E)
250W
(clean@IF)
3σσσσ<±±±±0.3%
CO2: 23kW
100kHz
5%
Sn-Droplet
EUVA Project (LPP)
Note))))Primary source to IF EUV transfer efficiency::::1) 43%
2) 28% with SPF
3) 36% without SPF
EUVA project-1 EUVA project-2
SPF: Spectral Purity Filter IF: Intermediate Focus
Commercial
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P5
Type LPP DPP
Maker Gigaphoton Company A Company B
Size Large Very Large Small
Power (at present) 104W/21W 90W/20W 34W/34W
Plasma No electrode No electrode Disc electrode
Mitigation Pre pulse + Magnet Gas Gas+mechanical shutter
Life limitation ( several 1000 hr ) Several 10 hr Several 10 hr
Bottle neck - Mirror Electrode/Mirror
Remark ・Theoretically no limit
・Engineering works still to be done
・Trade off of power and lifetime
・Trade off of power and lifetime・・Trade off of power and beam
quality
LPP::::CO2 laser and Sn source� High power pulsed CO2 laser
� Magnetic field plasma mitigation
� Pre-Pulse plasma technology
EUV sources
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Outline
1. Introduction
2. Engineering Test source
� 1st Generation (ETS) device: System experiment
– Latest experimental data
– Critical issues� 10Hz device: Critical issue experiment
– Perfect vaporization: Important step to magnetic mitigation
– Pre-pulse and high CE
3. HVM EUV light source� Product roadmap
� 2nd Generation device: Development status
– Configuration
– Latest status
4. Summary
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P7
ETS system configuration
System layout
■ EUV chamber
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P8
System operation data (ETS device)
�Laser power 5kW
�Duty 20% (ON 200msec:OFF 800msec)
Fast Ions are perfectly shielded across magnetic field !
Ion measurement
Magnetic field
Magnetically guided EUV plasma observation
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P9
SPIE 2010
(Feb.2010)
EUV Symposium
(Oct.2010)
Latest Data
(Feb,2011)
EUV power ( @ I/F) 69 W 104 W 42 W
EUV power ( clean @ I/F) 33 W 50 W 20 W
Duty cycle 20 % 20 % 5%
Max. non stop op. time >1 hr <1 hr >7 hr
Average CE 2.3 % 2.5 % 2.1%
Dose stability :simulation (+/- 0.15%) -
Droplet diameter 60µµµµm 60µµµµm 30µµµµm
CO2 laser power 5.6 kW 7.9 kW 3.6kW
System operation Data ( ETS device)System operation Data ( ETS device)
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P10
Previous Experiment 60µµµµm Liquid droplet experiment
New data: Tin Liquid droplet 60µµµµm -> 30 µµµµm
Almost one order less fragment !
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P11
Droplet generator lifetime improvement (φφφφ30 µµµµm)
� Operation time improved from <1 hour to >7 hours
0
10
20
30
40
50
60
1.0 2.0 3.0 4.0 5.0
Time (Hours)
Po
sit
ion
Sta
bil
ity 3
σ (
m)
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P12
0
5
10
15
20
25
30
0 1 2 3 4 5 6 7 8
Time [H]
EUV power @ IF clean [W]
System operation result on ETS
�Long time system operation demonstrated� Operation duration: 7 hours
� Droplet 30 mm diameter
� Full repetition rate: 100 kHz
� In burst clean power: 20W (average)
25W (max)
Conditions;
Control: Droplet position control ON, EUV energy control OFF
CO2 laser = 3.6kW @ 100kHz
Duty=5% (50msecON、950msecOFF)
25W= CE 2.6%
20W= CE 2.1%
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P13
Conclusion of ETS device experiment
“ETS experiment clarified 3 key challenges are essential”
� CE (Conversion Efficiency) improvement
� Debris mitigation = Stability and size of droplets
� CO2 laser load = power x duty
- Stable and small droplet
- high power CO2 laser
- the best plasma creation
main-pulse
Pre-pulseCO2 laser
pre-pulse laserDroplet generator
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Outline
1. Introduction
2. Engineering Test source
� 1st Generation (ETS) device: System experiment
– Latest experimental data
– Critical issues� 10Hz device: Critical issue experiment
– Perfect vaporization: Important step to magnetic mitigation
– Pre-pulse and high CE
3. HVM EUV light source� Product roadmap
� 2nd Generation device: Development status
– Configuration
– Latest status
4. Summary
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P15
Critical issue investigation with 10Hz device
- Double pulse optimization
- Debris mitigation mechanism
- Higher CE investigation
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P16
Setup configurations
Back
illuminato
r
CCD
camera
EU
V
sensor
Drive laser
Tin droplet
LIF camera
EUV/Debris Measurementport
Corrector mirror
Intermediate focus
EUV/Debris Measurementport
- Droplet diameter: 10 to 60 micron meter
- Shooting rate: up to 10 Hz
- Observe what’s happen in the vessel?
- Shadow camera & LIF: droplet & its behavior after laser shooting
- Driver laser: refraction power & distribution
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P17
Droplet transformation by pre-pulse
True circle
looked like this
ellipse in this
configuration
2:1
Observation
60 degree
Pre-pulse
Smaller fragments
Spread homogeneously
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P18
Improper pre-pulse condition; fragment size >>BIG
a) without main-pulse laser
pre-pulse irradiation TimeMain pulse laser/ EUV emission
after EUV emission
b) with main-pulse laser
Droplet shooting scheme
Back
illuminato
r
CCD
camera
EU
V
sensor
Drive laser
Tin droplet
LIFcamera
EUV/DebrisMeasurementport
Corrector mirror
Intermediate focus
EUV/DebrisMeasurementport
Back
illuminato
r
CCD
camera
EU
V
sensor
Drive laser
Tin droplet
LIFcamera
EUV/DebrisMeasurementport
Corrector mirror
Intermediate focus
EUV/DebrisMeasurementport
Fragments remained!
100micron
20 micron droplet
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P19
Proper pre-pulse condition
a) without main-pulse laser
pre-pulse irradiation TimeMain pulse laser/ EUV emission after EUV emission
b) with main-pulse laser
Droplet shooting scheme
Back
illuminato
r
CCD
camera
EU
V
sensor
Drive laser
Tin droplet
LIFcamera
EUV/DebrisMeasurementport
Corrector mirror
Intermediate focus
EUV/DebrisMeasurementport
Back
illuminato
r
CCD
camera
EU
V
sensor
Drive laser
Tin droplet
LIFcamera
EUV/DebrisMeasurementport
Corrector mirror
Intermediate focus
EUV/DebrisMeasurementport
Perfect
vaporization!
100micron
20 micron droplet
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P20
Target behavior with lasers shooting
10Hz Device: Fixed delay, Back light image, 1Hz sampling
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P21
Conclusion of 10Hz device experiment
“Even with smaller than 20µµµµm droplet,
Ce=3.3% and perfect vaporization is simultaneously achieved”
0.00
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
0 10 20 30 40 50 60
Droplet size (um)
Convers
ion E
ffic
iency
(%
)
CO2 IrradiationCO2 IrradiationCO2 IrradiationCO2 Irradiation
CO2 + Pre-pulseCO2 + Pre-pulseCO2 + Pre-pulseCO2 + Pre-pulseIrradiationIrradiationIrradiationIrradiation
CO2 + Improved Pre-pulseCO2 + Improved Pre-pulseCO2 + Improved Pre-pulseCO2 + Improved Pre-pulseIrradiationIrradiationIrradiationIrradiation
-3.3% CE realized by 20 micron meter droplet
-pre-pulse is key to obtain higher CE
-This test was performed by 2 Hz operation
- CO2 100 mJ, with/without pre-pulse
Perfect vaporization
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Outline
1. Introduction
2. Engineering Test source
� 1st Generation (ETS) device: System experiment
– Latest experimental data
– Critical issues� 10Hz device: Critical issue experiment
– Perfect vaporization: Important step to magnetic mitigation
– Pre-pulse and high CE
3. HVM EUV light source� Product roadmap
� 2nd Generation device: Development status
– Configuration
– Latest status
4. Summary
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P23
EUV product roadmap
� GL200E will be delivered to scanner manufacture
at Mid Y2011.
★ 1st source delivery
Power Model
500W NXE:3300D
350W NXE:3300C
250W NXE:3300B
100W Internal Use
2014 201520132010 201220112009
ETS
GL200E
GL200E+
GL400E
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P24
Clean power roadmap
* Against hemisphere (Calculation base)
** w/o SPF
500
350
250
100
0
100
200
300
400
500
600
ETS GL200E GL200E+ GL400E
Ou
tpu
t a
fte
r S
PF
(W
att
)
Drive laser power kW 10 23 33 40
Conversion efficiency % 3.0 5.0 5.0 6.0
C1 mirror collector angle sr 5.5 5.5 5.5 5.5
efficiency* % 74 74 74 74
C1 mirror reflectivity % (50) 57 57 57
Optical transmission % 95 95 95 95
SPF (IR, DUV) % N/A** 62 62 62
Total EUV power (after SPF) W 100 250 350 500
GL200E+ GL400EEUV model ETS GL200E
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P25
GL200E System layout in fab.
Clean room floor
Subfab
CO2 laser
Pre-pulse laser
Chiller
EUV chamber
Magnet
Utility
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P26
EUV source Scanner
High power pulsed
CO2 laser &
Pre-pulse laser
Beam transfer
system
EUV collector
Plasma Intermediate
Focus
Plasma guiding magnetSn supply
Scheme: LPP EUV light source
Sub Fab Floor
Scanner Floor
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P27
How it works
� Sn droplet comes in
� Shot by pre-pulse laser
and then by CO2 main
pulse laser
� Plasma created
� Debris mitigation by
magnetic field
� Clean operation completed
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P28
LPP-EUV Development Facility in Hiratsuka
UtilityLaboratory
Overview Building
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P29
GL200E proto constructed at Hiratsuka facility
Main-
AMP2
Main-
AMP1
BDU3
BDU4
Pre-AMP
OSC
Pre-AMP
CO2 laser OSC+Pre-AMP
CO2 laser Main-AMP
EUV-chamber
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P30P30
0
2000
4000
6000
8000
10000
12000
0 500 1000 1500 2000 2500 3000 3500
input power [W]
outp
ut
pow
er
[W]
Input
� Main amplifier characteristics : experimental results
� ~~~~10kW output achieved at 3kW input power
� Good beam quality: M2<2.0
Main-AMP
Output beam profile
Main Amplifier performance
Output
- 3kW
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P31
Development of small diameter droplet
0
10
20
3040
50
60
70
80
0.0 1.0 2.0 3.0 4.0 5.0
Time [hour]
Posi
tion s
tability
(3σ
) [u
m]
X Z
Position stability of 20μm @ 6 kHz w/o control, 1 point: 30 sec
Diameter:12μμμμm Diameter:20μμμμm Diameter:30μμμμm Diameter:40μμμμm
0 40μm
- 20mm droplet operate >10hrs
- 12mm droplet realized (champion data)
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P32
0
50
100
150
200
250
0 50 100 150 200 250
CO2 pulse energy (mJ)
EUV Clean Power Equivalent to 100kHz
Operation (W)
CE = 5 %
CE = 3 %
Scalability toward to 250W clean power
- 3.3% CE realized by 20 µµµµm droplet
- It indicates ~100W clean power if operated at 100kHz*
Key Technology
Milestone
MS5 11/Q4
250W@200mJ
* The measurement
was done at 2Hz
GL
20
0E
fin
al
= 2
3k
W
Now we are here
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P33
First light of GL200E will come very soon !
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Outline
1. Introduction
2. Engineering Test source
� 1st Generation (ETS) device: System experiment
– Latest experimental data
– Critical issues� 10Hz device: Critical issue experiment
– Perfect vaporization: Important step to magnetic mitigation
– Pre-pulse and high CE
3. HVM EUV light source� Product roadmap
� 2nd Generation device: Development status
– Configuration
– Latest status
4. Summary
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P35
Summary
� 1st generation integrated setup LPP source (ETS)
and 10 Hz device:� One order smaller fragment (droplet size reduction from 60µµµµm to 30 µµµµm) extends operation time to 7 hours under 20W(clean power @I/F,
5%duty) level operation.
� ETS experiment clarify 3 key engineering items are essential;
CE (Conversion Efficiency) improvement, Debris mitigation = Stability and size of droplets and CO2 laser load.
� With <20µµµµm droplet we found the region where Ce >3.3% and perfect vaporization are simultaneously possible.
� 2st generation LPP source (GL200E):� Concept of design and outline is reported.
� We already finished final assembling and just preparing operation of first light.
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P36
Acknowledgments
� Thanks to co-workers
� Tamotsu Abe, Yukio Watanabe, Takanobu Ishihara, Takeshi
Ohta, Tsukasa Hori, Akihiko Kurosu, Hiroshi Komori, Kouji
Kakizaki, Akira Sumitani
EUVA/Komatsu (Japan): 1200 Manda, Hiratsuka, Kanagawa,
254-8567 Japan
� Osamu Wakabayashi, Hiroaki Nakarai, Junichi fujimoto
Gigaphoton (Japan): 400 Yokokura shinden, Oyama, Tochigi,323-8558 Japan
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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P37xxxxxxxxxx P37 P37