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1 100W 1st generation Laser-Produced Plasma source system for HVM EUV lithography Acknowledgments This work was partly supported by the New Energy and Industrial Technology Development Organization -NEDO- Japan. Hakaru Mizoguchi Gigaphoton 3-25-1 Shinomiya, Hiratsuka, Japan

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Page 1: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

1

100W 1st generation Laser-Produced Plasma

source system for HVM EUV lithography

Acknowledgments

This work was partly supported by the New Energy and Industrial

Technology Development Organization -NEDO- Japan.

Hakaru Mizoguchi

Gigaphoton

3-25-1 Shinomiya, Hiratsuka, Japan

Page 2: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

Outline

1. Introduction

2. Engineering Test source

� 1st Generation (ETS) device: System experiment

– Latest experimental data

– Critical issues� 10Hz device: Critical issue experiment

– Perfect vaporization: Important step to magnetic mitigation

– Pre-pulse and high CE

3. HVM EUV light source� Product roadmap

� 2nd Generation device: Development status

– Configuration

– Latest status

4. Summary

Page 3: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

Outline

1. Introduction

2. Engineering Test source

� 1st Generation (ETS) device: System experiment

– Latest experimental data

– Critical issues� 10Hz device: Critical issue experiment

– Perfect vaporization: Important step to magnetic mitigation

– Pre-pulse and high CE

3. HVM EUV light source� Product roadmap

� 2nd Generation device: Development status

– Configuration

– Latest status

4. Summary

Page 4: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P4

1st Mid

term

2004/9

2nd Mid term

2006/3

EUVA -1

final

2008/3

EUVA-2

final

~~~~ 2011/3

Gigaphoton

2011/4 ~~~~

EUV Power

(IF)

Stability

Laser

Laser freq.

CE (source)

Target

5.7W 1)

---

YAG:1.5k

W

10kHz

0.9%

Xe-Jet

10W 1)

σσσσ<±±±±10%

CO2:2.6kW

100kHz

0.9%

SnO2

choroid

liquid jet

50W 2)

σσσσ <±±±±5%

CO2:

7.5kW

100kHz

2.5%

Sn-Droplet

1st Generation

(ETS)

110W 2) /140W 3)

3σσσσ<±±±±0.3%

CO2: 10kW

100kHz

4%

Sn-Droplet

2nd Generation

(proto/GL200E)

250W

(clean@IF)

3σσσσ<±±±±0.3%

CO2: 23kW

100kHz

5%

Sn-Droplet

EUVA Project (LPP)

Note))))Primary source to IF EUV transfer efficiency::::1) 43%

2) 28% with SPF

3) 36% without SPF

EUVA project-1 EUVA project-2

SPF: Spectral Purity Filter IF: Intermediate Focus

Commercial

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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P5

Type LPP DPP

Maker Gigaphoton Company A Company B

Size Large Very Large Small

Power (at present) 104W/21W 90W/20W 34W/34W

Plasma No electrode No electrode Disc electrode

Mitigation Pre pulse + Magnet Gas Gas+mechanical shutter

Life limitation ( several 1000 hr ) Several 10 hr Several 10 hr

Bottle neck - Mirror Electrode/Mirror

Remark ・Theoretically no limit

・Engineering works still to be done

・Trade off of power and lifetime

・Trade off of power and lifetime・・Trade off of power and beam

quality

LPP::::CO2 laser and Sn source� High power pulsed CO2 laser

� Magnetic field plasma mitigation

� Pre-Pulse plasma technology

EUV sources

Page 6: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

Outline

1. Introduction

2. Engineering Test source

� 1st Generation (ETS) device: System experiment

– Latest experimental data

– Critical issues� 10Hz device: Critical issue experiment

– Perfect vaporization: Important step to magnetic mitigation

– Pre-pulse and high CE

3. HVM EUV light source� Product roadmap

� 2nd Generation device: Development status

– Configuration

– Latest status

4. Summary

Page 7: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P7

ETS system configuration

System layout

■ EUV chamber

Page 8: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P8

System operation data (ETS device)

�Laser power 5kW

�Duty 20% (ON 200msec:OFF 800msec)

Fast Ions are perfectly shielded across magnetic field !

Ion measurement

Magnetic field

Magnetically guided EUV plasma observation

Page 9: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P9

SPIE 2010

(Feb.2010)

EUV Symposium

(Oct.2010)

Latest Data

(Feb,2011)

EUV power ( @ I/F) 69 W 104 W 42 W

EUV power ( clean @ I/F) 33 W 50 W 20 W

Duty cycle 20 % 20 % 5%

Max. non stop op. time >1 hr <1 hr >7 hr

Average CE 2.3 % 2.5 % 2.1%

Dose stability :simulation (+/- 0.15%) -

Droplet diameter 60µµµµm 60µµµµm 30µµµµm

CO2 laser power 5.6 kW 7.9 kW 3.6kW

System operation Data ( ETS device)System operation Data ( ETS device)

Page 10: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P10

Previous Experiment 60µµµµm Liquid droplet experiment

New data: Tin Liquid droplet 60µµµµm -> 30 µµµµm

Almost one order less fragment !

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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P11

Droplet generator lifetime improvement (φφφφ30 µµµµm)

� Operation time improved from <1 hour to >7 hours

0

10

20

30

40

50

60

1.0 2.0 3.0 4.0 5.0

Time (Hours)

Po

sit

ion

Sta

bil

ity 3

σ (

m)

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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P12

0

5

10

15

20

25

30

0 1 2 3 4 5 6 7 8

Time [H]

EUV power @ IF clean [W]

System operation result on ETS

�Long time system operation demonstrated� Operation duration: 7 hours

� Droplet 30 mm diameter

� Full repetition rate: 100 kHz

� In burst clean power: 20W (average)

25W (max)

Conditions;

Control: Droplet position control ON, EUV energy control OFF

CO2 laser = 3.6kW @ 100kHz

Duty=5% (50msecON、950msecOFF)

25W= CE 2.6%

20W= CE 2.1%

Page 13: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P13

Conclusion of ETS device experiment

“ETS experiment clarified 3 key challenges are essential”

� CE (Conversion Efficiency) improvement

� Debris mitigation = Stability and size of droplets

� CO2 laser load = power x duty

- Stable and small droplet

- high power CO2 laser

- the best plasma creation

main-pulse

Pre-pulseCO2 laser

pre-pulse laserDroplet generator

Page 14: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

Outline

1. Introduction

2. Engineering Test source

� 1st Generation (ETS) device: System experiment

– Latest experimental data

– Critical issues� 10Hz device: Critical issue experiment

– Perfect vaporization: Important step to magnetic mitigation

– Pre-pulse and high CE

3. HVM EUV light source� Product roadmap

� 2nd Generation device: Development status

– Configuration

– Latest status

4. Summary

Page 15: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P15

Critical issue investigation with 10Hz device

- Double pulse optimization

- Debris mitigation mechanism

- Higher CE investigation

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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P16

Setup configurations

Back

illuminato

r

CCD

camera

EU

V

sensor

Drive laser

Tin droplet

LIF camera

EUV/Debris Measurementport

Corrector mirror

Intermediate focus

EUV/Debris Measurementport

- Droplet diameter: 10 to 60 micron meter

- Shooting rate: up to 10 Hz

- Observe what’s happen in the vessel?

- Shadow camera & LIF: droplet & its behavior after laser shooting

- Driver laser: refraction power & distribution

Page 17: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P17

Droplet transformation by pre-pulse

True circle

looked like this

ellipse in this

configuration

2:1

Observation

60 degree

Pre-pulse

Smaller fragments

Spread homogeneously

Page 18: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P18

Improper pre-pulse condition; fragment size >>BIG

a) without main-pulse laser

pre-pulse irradiation TimeMain pulse laser/ EUV emission

after EUV emission

b) with main-pulse laser

Droplet shooting scheme

Back

illuminato

r

CCD

camera

EU

V

sensor

Drive laser

Tin droplet

LIFcamera

EUV/DebrisMeasurementport

Corrector mirror

Intermediate focus

EUV/DebrisMeasurementport

Back

illuminato

r

CCD

camera

EU

V

sensor

Drive laser

Tin droplet

LIFcamera

EUV/DebrisMeasurementport

Corrector mirror

Intermediate focus

EUV/DebrisMeasurementport

Fragments remained!

100micron

20 micron droplet

Page 19: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P19

Proper pre-pulse condition

a) without main-pulse laser

pre-pulse irradiation TimeMain pulse laser/ EUV emission after EUV emission

b) with main-pulse laser

Droplet shooting scheme

Back

illuminato

r

CCD

camera

EU

V

sensor

Drive laser

Tin droplet

LIFcamera

EUV/DebrisMeasurementport

Corrector mirror

Intermediate focus

EUV/DebrisMeasurementport

Back

illuminato

r

CCD

camera

EU

V

sensor

Drive laser

Tin droplet

LIFcamera

EUV/DebrisMeasurementport

Corrector mirror

Intermediate focus

EUV/DebrisMeasurementport

Perfect

vaporization!

100micron

20 micron droplet

Page 20: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P20

Target behavior with lasers shooting

10Hz Device: Fixed delay, Back light image, 1Hz sampling

Page 21: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P21

Conclusion of 10Hz device experiment

“Even with smaller than 20µµµµm droplet,

Ce=3.3% and perfect vaporization is simultaneously achieved”

0.00

0.50

1.00

1.50

2.00

2.50

3.00

3.50

4.00

0 10 20 30 40 50 60

Droplet size (um)

Convers

ion E

ffic

iency

(%

)

CO2 IrradiationCO2 IrradiationCO2 IrradiationCO2 Irradiation

CO2 + Pre-pulseCO2 + Pre-pulseCO2 + Pre-pulseCO2 + Pre-pulseIrradiationIrradiationIrradiationIrradiation

CO2 + Improved Pre-pulseCO2 + Improved Pre-pulseCO2 + Improved Pre-pulseCO2 + Improved Pre-pulseIrradiationIrradiationIrradiationIrradiation

-3.3% CE realized by 20 micron meter droplet

-pre-pulse is key to obtain higher CE

-This test was performed by 2 Hz operation

- CO2 100 mJ, with/without pre-pulse

Perfect vaporization

Page 22: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

Outline

1. Introduction

2. Engineering Test source

� 1st Generation (ETS) device: System experiment

– Latest experimental data

– Critical issues� 10Hz device: Critical issue experiment

– Perfect vaporization: Important step to magnetic mitigation

– Pre-pulse and high CE

3. HVM EUV light source� Product roadmap

� 2nd Generation device: Development status

– Configuration

– Latest status

4. Summary

Page 23: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P23

EUV product roadmap

� GL200E will be delivered to scanner manufacture

at Mid Y2011.

★ 1st source delivery

Power Model

500W NXE:3300D

350W NXE:3300C

250W NXE:3300B

100W Internal Use

2014 201520132010 201220112009

ETS

GL200E

GL200E+

GL400E

Page 24: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P24

Clean power roadmap

* Against hemisphere (Calculation base)

** w/o SPF

500

350

250

100

0

100

200

300

400

500

600

ETS GL200E GL200E+ GL400E

Ou

tpu

t a

fte

r S

PF

(W

att

)

Drive laser power kW 10 23 33 40

Conversion efficiency % 3.0 5.0 5.0 6.0

C1 mirror collector angle sr 5.5 5.5 5.5 5.5

efficiency* % 74 74 74 74

C1 mirror reflectivity % (50) 57 57 57

Optical transmission % 95 95 95 95

SPF (IR, DUV) % N/A** 62 62 62

Total EUV power (after SPF) W 100 250 350 500

GL200E+ GL400EEUV model ETS GL200E

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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P25

GL200E System layout in fab.

Clean room floor

Subfab

CO2 laser

Pre-pulse laser

Chiller

EUV chamber

Magnet

Utility

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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P26

EUV source Scanner

High power pulsed

CO2 laser &

Pre-pulse laser

Beam transfer

system

EUV collector

Plasma Intermediate

Focus

Plasma guiding magnetSn supply

Scheme: LPP EUV light source

Sub Fab Floor

Scanner Floor

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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P27

How it works

� Sn droplet comes in

� Shot by pre-pulse laser

and then by CO2 main

pulse laser

� Plasma created

� Debris mitigation by

magnetic field

� Clean operation completed

Page 28: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P28

LPP-EUV Development Facility in Hiratsuka

UtilityLaboratory

Overview Building

Page 29: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P29

GL200E proto constructed at Hiratsuka facility

Main-

AMP2

Main-

AMP1

BDU3

BDU4

Pre-AMP

OSC

Pre-AMP

CO2 laser OSC+Pre-AMP

CO2 laser Main-AMP

EUV-chamber

Page 30: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P30P30

0

2000

4000

6000

8000

10000

12000

0 500 1000 1500 2000 2500 3000 3500

input power [W]

outp

ut

pow

er

[W]

Input

� Main amplifier characteristics : experimental results

� ~~~~10kW output achieved at 3kW input power

� Good beam quality: M2<2.0

Main-AMP

Output beam profile

Main Amplifier performance

Output

- 3kW

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■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P31

Development of small diameter droplet

0

10

20

3040

50

60

70

80

0.0 1.0 2.0 3.0 4.0 5.0

Time [hour]

Posi

tion s

tability

(3σ

) [u

m]

X Z

Position stability of 20μm @ 6 kHz w/o control, 1 point: 30 sec

Diameter:12μμμμm Diameter:20μμμμm Diameter:30μμμμm Diameter:40μμμμm

0 40μm

- 20mm droplet operate >10hrs

- 12mm droplet realized (champion data)

Page 32: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P32

0

50

100

150

200

250

0 50 100 150 200 250

CO2 pulse energy (mJ)

EUV Clean Power Equivalent to 100kHz

Operation (W)

CE = 5 %

CE = 3 %

Scalability toward to 250W clean power

- 3.3% CE realized by 20 µµµµm droplet

- It indicates ~100W clean power if operated at 100kHz*

Key Technology

Milestone

MS5 11/Q4

250W@200mJ

* The measurement

was done at 2Hz

GL

20

0E

fin

al

= 2

3k

W

Now we are here

Page 33: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P33

First light of GL200E will come very soon !

Page 34: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

Outline

1. Introduction

2. Engineering Test source

� 1st Generation (ETS) device: System experiment

– Latest experimental data

– Critical issues� 10Hz device: Critical issue experiment

– Perfect vaporization: Important step to magnetic mitigation

– Pre-pulse and high CE

3. HVM EUV light source� Product roadmap

� 2nd Generation device: Development status

– Configuration

– Latest status

4. Summary

Page 35: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P35

Summary

� 1st generation integrated setup LPP source (ETS)

and 10 Hz device:� One order smaller fragment (droplet size reduction from 60µµµµm to 30 µµµµm) extends operation time to 7 hours under 20W(clean power @I/F,

5%duty) level operation.

� ETS experiment clarify 3 key engineering items are essential;

CE (Conversion Efficiency) improvement, Debris mitigation = Stability and size of droplets and CO2 laser load.

� With <20µµµµm droplet we found the region where Ce >3.3% and perfect vaporization are simultaneously possible.

� 2st generation LPP source (GL200E):� Concept of design and outline is reported.

� We already finished final assembling and just preparing operation of first light.

Page 36: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P36

Acknowledgments

� Thanks to co-workers

� Tamotsu Abe, Yukio Watanabe, Takanobu Ishihara, Takeshi

Ohta, Tsukasa Hori, Akihiko Kurosu, Hiroshi Komori, Kouji

Kakizaki, Akira Sumitani

EUVA/Komatsu (Japan): 1200 Manda, Hiratsuka, Kanagawa,

254-8567 Japan

� Osamu Wakabayashi, Hiroaki Nakarai, Junichi fujimoto

Gigaphoton (Japan): 400 Yokokura shinden, Oyama, Tochigi,323-8558 Japan

Page 37: 100W 1st generation Laser-Produced Plasma source system for … · 2013-03-13 · Clean power roadmap * Against hemisphere (Calculation base) ** w/o SPF 500 350 250 100 0 100 200

■ Copyright 2011 GIGAPHOTON INC. all rights reserved. SPIE Advanced Lithography 2011 P37xxxxxxxxxx P37 P37