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Strained-Si Devices and Circuits for Low-Power Applications

系所 : 積體電路研究所指導教授 : 易序忠 教授學號 :95662005姓名 : 李俊志

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Outline Introduction Strained-S i Device Features Strained-S i CMOS inverter Strained-S i CMOS circuits Result and Discussion Conclusion References

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Introduction higher carrier mobility with preservation of conventional

CMOS device structure and geometry, strained-Si (SS) MOSFETs are recently of much interest for highperformance

circuit applications Due to the speed advantage, SS devices could be applied

to low-power circuit by lowering supply voltage, one of the most effective ways for low-power circuit design.

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Strained-Si Device Features Based on the same technology node, strained-S i

CMOS has the advantages of mobility enhancement to overcome the issues of mobility degradation due to scaling down.. To breakthrough the bottlenecks of the strained-S i CMOS technology - high quality S I G e virtual substrate formation and device structure design/integration including global and local strain, the platform of high performance CMOS process/device with mobility enhancement will be developed for the high-end S o C product.

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技術規格 :S i G e Virtual Substrate – thickness < 1.0um, threading dislocation density < 104~5/cm2 Carrier mobility enhancement – electron > 70%, hole > 60%

技術特寫 : 高品質矽鍺虛擬基材的形成技術全面與局部形變的元件結構設計及製程整合技術

競爭力：相容性佳：與 CMOS 製程相容

突破點：崁入 Si 、 SiC 中間層之 SiGe 虛擬基材形成技術，有效降低其厚度

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Strained-Si CMOS Inverter

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Strained-S i CMOS Inverter

The bulk-SS inverter is significantly fast

VDD could be reduced by 85mv for the SS CMOS, which would decrease the static (DC) and (AC) power consumptions.

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圖一 Predicted delays per stage of unloaded 9-stageinverter ring oscillator for bulk-S i and bulk-SS devices

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For equal delay =15ps , DC power is ~20% lower in the SS device than the bulk-S i counterpart , Note that for equal VDD,DC power is comparable since V t is made equal, The lower VDD would yield less DIBL, thereby reducing I off and DC power.

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圖二 Predicted normalized static (DC) and dynamic (AC) power consumptions of the unloaded ring oscillator for bulk-S i and bulk-SS device

in equal delay

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Strained-Si CMOS Circuits

圖三 Static 4-way NAND circuit with bulk-S i and bulk-SS device :dynamic power versus frequency and static power for (A.B.C.D)=(1.1.1.1),(1,1,1,

0),(1,1,0,0),(1,0,0,0),(0,0,0,0)

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Result and Discussion DIBL: 長通道元件閘極下方的空乏區電

荷沿著源極到汲極呈現常數值的狀態分佈 , 當汲極電壓增加時 , 並不會影響其能帶的分佈狀態 .

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圖四 SI-SIO2 接面能帶圖

14 圖五 DIBL 效應對輸出電阻的影響

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Conclusions

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References