02. analog try yourself_2016_ec
DESCRIPTION
fdfTRANSCRIPT
Electronics EngineeringAnalog Circuits
WORKBOOKWORKBOOKWORKBOOKWORKBOOKWORKBOOK
2016
Detailed Explanations ofTry Yourself Questions
© Copyrightwww.madeeasypublications.org
Diode Circuits and VoltageRegulator Circuits1
T1.T1.T1.T1.T1. Solution:Solution:Solution:Solution:Solution:
+ –C1
5 v D2
D1 C210 v–
+R
Negativeclamper
Negative Peakdetector
5 sin tω
Vc1 = 5v VC2 = –10 v
T2.T2.T2.T2.T2. (a)(a)(a)(a)(a)In this question we need to determine whichdiode is on and which diode is OFF, clearly diodeD3 is OFF because if it is on then current fromcurrent source will flow from n to p terminal ofthe diode D3 and this is not possible, hence D3
is OFF.Applying the same concept, we can say diodeD2 is also OFF.Diode D1 is on because it is forced by thebattery of 10 V.
T3.T3.T3.T3.T3. (c)(c)(c)(c)(c)Assume D1on, D2off, D3on
0.6 V 0.6 V
10 V
– 10 V
10 kΩ
10 kΩD2 off
10 kΩ
– 20 V
ID1 =
= 1.47 mA
ID2 = 0
ID3 =
= 0.94 mA
T4.T4.T4.T4.T4. (d)(d)(d)(d)(d)When E = 1.0 V D1 on D20ff
I1 =
Ω + Ω = 0.033 mA
3300 Ω
5600 Ω
0.7 V
1 VI1
When E = 1.4 V D1on, D2off
© Copyright www.madeeasypublications.org
3Workbook
3300 Ω
5600 Ω
0.7 V
1. 4 VI1
I1 =
=Ω + Ω
When E = 2 V, D1on, D2off
3300 Ω
5600 Ω
0.7 V
2 VI1
I1 =
=Ω + Ω
T5.T5.T5.T5.T5. Solution:Solution:Solution:Solution:Solution:Here there are two different hire constant involvedDuring T1 vo = v1e
–t/RC
At t = T1 = T
vo =
=
=
⎡ ⎤⎢ ⎥⎣ ⎦
=
α⎡ ⎤⎢ ⎥⎣ ⎦
During T2
Vo =
=
=
⎡ ⎤⎢ ⎥⎣ ⎦ = v2[1 – α]
+ = 20
α + = 20
α+ = 20 ...(i)
+ = 20
v2 – αv2 + v1 = 20v1 + v2 – αv2 = 20 ...(ii)
13.33 v
– 6.67 vFrom (i) and (ii)
α
= α
From equation with α neglected2v2 + v2 = 20
v2 =
= –6.67 v
v1 = +13.33
T6.T6.T6.T6.T6. (a)(a)(a)(a)(a)
– 10 V
10 V
5 mA
5 kΩ
+
–0.7 V
Vo1
+
–25 V
Vo1 = 0.7+ 25 V + 10 V = 35.7 V
5 mA
V02
5 kΩ
–10V
+10V
+
–+
–
25 V
20 V
Vo2 = –10 V – 25 V – 20 V = –55 V
T7.T7.T7.T7.T7. Solution:Solution:Solution:Solution:Solution:Io = 5 A μ
2 mΩ
IR
I
10 v
4 Electronics Engineering • Analog Circuits
© Copyrightwww.madeeasypublications.org
I × 7 = Io × 11
I =
μ × = 7.85 μA
I = Io + IR
IR = I – Io = 7.85 μA – 5 μA= 2.85 μA
R =
I =
μ = 350 kΩ
T8.T8.T8.T8.T8. (a)(a)(a)(a)(a)Vin – (–0.7) = Vout
Vin + 0.7 = 1.1Vin = 1.1 – 0.7 = 0.4 v
T9.T9.T9.T9.T9. (b)(b)(b)(b)(b)Positive half cycle
D1on, D2off
vo =
× +
=
50 v
115 v2
17.9° 180°
Negative half cycleD1off, D2 off
V0 = 50v
© Copyright www.madeeasypublications.org
Transistor Biasing and ThermalStabilization2
T1.T1.T1.T1.T1. Solution:Solution:Solution:Solution:Solution:
15 V
Q1
5 kΩ
3 kΩ
100 k
50 k
VTH =
×+
= 5 V
RTH = 100 k 50 k = 33.33 kΩ
5 kΩ
5 V
15 V
3 kΩ
33.33 k
IB1
+0.7
VTH – IB1RTH – VBE – IERE = 0
IB1 = ( )
+ + β
=
+ ×IC1 = βIB1 = 1.28 mAIE1 = (1 + β)IB1 = 1.29 mA
VC1 = 15 – IC1 RC1
= 15 – 1.28 mA × 5 = 8.6 V
2 kΩ5 kΩ
15 V15 V
2.7 kΩRE
+0.7–
Q2Q1
VC1 = 8.6 V
VE2 = VC1 + VEB2
= 8.6 + 0.7 = 9.3 V
IE2 =
=
= 2.85 mA
IC2 = β ×+ β
I
=
× = 2.82 mA
VC2 = IC2 × RC2
= 2.82 mA × 2.7 kΩ = 7.62 V
6 Electronics Engineering • Analog Circuits
© Copyrightwww.madeeasypublications.org
T2.T2.T2.T2.T2. Solution:Solution:Solution:Solution:Solution:VCC – IC1R2 – VCE1 = 06 – 1.5 mA × R2 – 3 = 0
R2 = 2 kΩ
IB1 =
=βI
= 0.01 mA
IB2 will be equal to IB1 as there is no change inR1
IC2 = β2 IB2
= 200 × 0.01 mA = 2 mAVCE2 = VCC – IC2R2
= 6 – 2 mA × 2kΩ = 2 VThe new operating point is
Q(2 V, 2 mA)
T3.T3.T3.T3.T3. Solution:Solution:Solution:Solution:Solution:Assume Q is in active region
50 kΩ
10V
2 kΩ
3 kΩ
5 V
IB active
IBactive =
+ ×
=
= 17 μA
ICactive = β IBactive
= 100 × 17 μA = 1.7 mAKVL in output loop
10 V
2 Ω
3 kΩ
VCEsat = 0.2 VVCsat = 2.5 V
VE = 2 k × 1.7 mAΩ
ICsat
VCsat = 3.6 VVCEsat = 0.2 V
VE = 2 kΩ × 1.7 mA = 3.4 V
ICsat =
Ω = 2.13 mA
ICsat > ICactive Active region
T4.T4.T4.T4.T4. Solution:Solution:Solution:Solution:Solution:Since I1 = 0.2 mA and I2 = 0.3 mA. So n1 = 2and n2 = 3, because we need to find minimumnumber of BJT required.
© Copyright www.madeeasypublications.org
Small Signal BJT Amplifiers3
T1.T1.T1.T1.T1. (b)(b)(b)(b)(b)
VS 50 k 2 kΩ
VO
1 kΩ10 k
12 V
β = 100VA = ∞
(IE)Q =
Ω = 1.3 mA
DC Circuit
VTH 2 kΩ
1 kΩ
12 V
+
–VEC
RTH
VTH =
×+
= 10 v
RTh = 50 k ⎥⎥ 10 k = 8.33 kΩ
KVL in output loop12 – IE × 1 k – VEC – 2k × IE = 012 – 1.3 mA × 1k – VEC – 2 k × 1.3 mA = 0
VEC = 8.1 vGiven range 1 ≤ VEC ≤ 11 v
ΔVEC = 11 – 8.1 = 2.9 vThe voltage swing is
2ΔVEC = 2 × 2.9 = 5.8 v
T2.T2.T2.T2.T2. (d)(d)(d)(d)(d)
270 Ω
VTh
Vi RL
gm = 2 mS ; ro = 250 kΩ
rπ = βre =
β = = 50 kΩ
VTH RL
ro
270 Ω E C
Vπ
IB
IE
Vi
+ –g vm π
+
–rπ
+
–
B
8 Electronics Engineering • Analog Circuits
© Copyrightwww.madeeasypublications.org
Vπ =
π
π×
+i
=
i = – 0.994 vi
VTh + rogmvπ – vπ= 0VTh = –rogmvπ – vπ
= –(1 + gmro) (–0.994vi)= – (1 + 2mS × 250 kΩ) × 0.994vi
VTh = 497.9 vi
T3.T3.T3.T3.T3. (a)(a)(a)(a)(a)
Q2
Q1
Vo
Vi
B1
vi Vπ1 rπ1+
–g Vm1 1π
C1
E2
C2B2
Vπ2
+
–rπ2
Vo
g Vm2 2 π
Vi = Vπ1
Vo = – Vπ2
KCL at the output node
π
π+ = gm2 Vπ2
π+ = gm2Vo
π
⎡ ⎤+⎢ ⎥
⎣ ⎦= – gm1Vi
Av =
π
π=
+i
T4.T4.T4.T4.T4. (d)(d)(d)(d)(d)
Vi
220 k
12 V
3.9 k
C1C2
DC circuit
+ –VBE
220 k
IB
12 V
3.9 k (1 + )β IB
IB =( )
+ β +
= 0.0163 mAIE = (1 + β)IB = 1.97 mA
re =
II
=
= 13.15 Ω
BVi
βre
1.578 kΩ220 k1 – Av
Vo
3.9 kβIB
C
220 kAVAv – 1
= 220 k
Vo = – (220 k ⎥⎥ 3.9 k) βIB
Av =
=
= –291.41
© Copyright www.madeeasypublications.org
9Workbook
Zi = i
iI =
β
= 0.752 k ⎥⎥ 1.578 k= 0.509 kΩ = 509.4 Ω
T5.T5.T5.T5.T5. (b)(b)(b)(b)(b)
hie =
Δ = = ΩΔI
hfe =
Δ = =Δ
II
T6.T6.T6.T6.T6. (?)(?)(?)(?)(?)Since collector current at operating point is givenin the question we do not need to solve the circuitat DC.The parameters of BJT are
gm =
= =
I
ro =
= ∞I
re =
α = Ω
The circuit for AC analysis,
iS
VS V0
4 k = Ω RLRS=100 kΩ
3 kΩ 25.6 kΩ
4 kΩ
10.4 kΩ
0.56 V117.71 Ω
+– V1
Assuming, base current is zero,V1 = –Vs
and Vo = –0.56 V1 × (4 kΩ || 4 kΩ)
= 112.30
© Copyrightwww.madeeasypublications.org
Field Effect TransistorAmplifiers4
T1.T1.T1.T1.T1. (a)(a)(a)(a)(a)10 v
v1
v2
M1
M2
M3
Ad VD = VG ∴ we conclude that each MOSFETis in saturation.
ID = kn1 (VGS – VT)2
MOSFET M1
ID = kn1 (VGS1 – VT)2
VGS1 = 10 – 5 = 5 v
0.5 mA = 36μ ×
⎛ ⎞⎜ ⎟⎝ ⎠ × (5 – 1)2
⎛ ⎞⎜ ⎟⎝ ⎠ = 1.73
MOSFET M2
ID = kn2 (VGS2 – VT)2
0.5 mA = 36μ ×
⎛ ⎞⎜ ⎟⎝ ⎠ 2 (3 – 1)2
⎛ ⎞⎜ ⎟⎝ ⎠ = 6.94
MOSFET M3
ID = kn3 (VGS3 – VT)2
0.5 mA = 36μ ×
⎛ ⎞⎜ ⎟⎝ ⎠ 3 (2 – 1)2
⎛ ⎞⎜ ⎟⎝ ⎠ = 27.8
T2.T2.T2.T2.T2. (c)(c)(c)(c)(c)If VTH = 0.4 vPMOS in depletion mode
VS = 1.5 V VD = 0
1.5 V
VG = 0.5 V
0.5 V+–
+–
VSD > VSG + VTH → current saturation
VSD < VSG + VTH → Triode region
VSD = VS – VG = 1.5 – 0.5 = 1 v
VSD = VS – VD = 1.5 – 0 = 1.5 v1.5 > 1 V + 0.4 current saturation region
+–
+–
VS = 0.9 V VD = 0.9 V
0.9 V VG = 0 0.9 V
PMOS in depletion mode.VSD = VS – VD = 0.9 – 0.9 = 0
© Copyright www.madeeasypublications.org
11Workbook
VSG = VS – VG = 0.9 – 0 = 0.90 < 0.9 + 0.4 triode region
T3.T3.T3.T3.T3. (b)(b)(b)(b)(b)3 v
vD1
v2
M1
M2
I1
Given VTH = 1 vSo MOSFET is an n channel enhancementMOSFET in both transistors
VD = VG
M1 & M2 are in current saturation
3 – VDS1 – VDS2 = 0
VDS1 + VDS2 = 3 V
VDS2 =
= 1.5 v (VDS1 = VDS2)
VGS2 = VDS2 = 1.5 v = V2
VGS1 = VDS1 = 1.5 v
I1 = ID1 = ID2
= ( )
μ −
= ( )
× × − μ = 7.5 μ A
T4.T4.T4.T4.T4. (b)(b)(b)(b)(b)It is common drain amplifier.
Av =
+=
Ω+ Ω
= 0.95
gm = 4.75 m
gm = 2 kn (VGS – VT)
= 2 kn
⎛ ⎞+ −⎜ ⎟
⎝ ⎠
I
gm = I
gm = 2
⎛ ⎞× μ ⎜ ⎟⎝ ⎠I
= 47
T5.T5.T5.T5.T5. (a)(a)(a)(a)(a)VDD
iD
v0
M1
M2
vGSD
rOL (load)
rOLg VmD gsvi
D
rOD
G
Vgs
SV0 = gm Vgs rOD ⎥⎥ rOL
Vi = VgsV0 = –gm vi (rOD⎥⎥ rOL)
Av =
i= – gmD (rOD⎥⎥ rOL)
gmD = i= × = 0.874 mA/v
Since λD = λL
rOD = rOL =
=λ ×i = 500 kΩ
Av = – 0.894 (500 k ⎥⎥ 500 k) = – 224
T6.T6.T6.T6.T6. (a)(a)(a)(a)(a)DC circuit
–5 v +5 v
100 kΩ 4 kΩ1 mA
ID
ID = IS = I mAn channel enhancement MOSFETAssume Q in saturation.
ID = kn (VGS – VT)2
I = 1 (VGS – 1)2
VGS = 2 V
gm = 2 kn (VGS – VT)= 2 mA/V
12 Electronics Engineering • Analog Circuits
© Copyrightwww.madeeasypublications.org
T7.T7.T7.T7.T7. (b)(b)(b)(b)(b)In the previous part we calculatedtransconductance of the device (gm = 2 mS).Now, drawing the circuit for AC analysis
V0
50 kΩ
VS
g Vm gs
4 kΩ 10 kΩ
500 Ω
Vgs+–i1
From the figure,V0 = – gm VGS (RD⎥⎥ RL)
gm Vgs = –i1
⇒
i= RD || RL
⇒ Vo = 0.283 sinωt V
T8.T8.T8.T8.T8. (b)(b)(b)(b)(b)
CMOSV
VV
0 = +
(PMOS)
i
T
VV
V
0 = +
(NMOS)
i
T
Vt
Amplifier
3
T9.T9.T9.T9.T9. (a)(a)(a)(a)(a)
v0
VGS2 VGS1
Iin
I mA
IG = 0
⎛ ⎞ =⎜ ⎟⎝ ⎠
3
⎛ ⎞ =⎜ ⎟⎝ ⎠
⎛ ⎞ =⎜ ⎟⎝ ⎠
1
2 I mA
Current Mirror
As
⎛ ⎞⎜ ⎟⎝ ⎠ = 2
Iin = 2 × I mA= 2 mA
© Copyright www.madeeasypublications.org
BJTs & FETs at High Frequencies5
T1.T1.T1.T1.T1. (a)(a)(a)(a)(a)
To calculate the
we will draw the small
signal model of the two circuit (we will useT-model of the device).
re
RC
V0
CE
Amplifier-1
g Vm be
Re
Vbe
+
–
T-Model
re
RC
V0
Amplifier-2
g Vm be
Re
Vbe
+
–
T-Model
CE
Since β = ∞ and IE = 1 mA so re = 25 Ω.
So for =
where, Req is equivalent resistance acrosscapacitance CE.
Req = Re + re in Amplifier 1and Req = (Re ||re) in Amplifier 2
So,
=
+
=
||
So,
=
Ω Ω=
+ Ω + Ω
=
+
= 2.55 × 10–3
T2.T2.T2.T2.T2. (a)(a)(a)(a)(a)
To find fH and fL we draw the small signal model:The small signal paramters of the BJT are
gm =
= =I
re = 25.0 ΩFrom the circuit we can see that the capacitance(C = 10 µF) has high pass characteristic so it
14 Electronics Engineering • Analog Circuits
© Copyrightwww.madeeasypublications.org
decide fL and capacitance (C = 15 pF) has lowpass characteristic so it decide fH.To find out fL ⇒
fL =
×
Here, C is 10 µF and Req is the equivalentresistance seen by the capacitance.Lets draw the small signal model to find Req:
0.1 kΩ C = 10 Fμ
VS re = 25 kΩ
0.5 kΩ
5 kΩ
10 kΩ
V0
g Vm be
T-Model
Rib
40 kΩ5.7 kΩ
Rib = (re + 0.5 kΩ)[When emitter resistance is seen through
bas it get multiplied by (β + 1)]
So, Rib = 53.025 kΩand Req = 0.1 kΩ + (53.025 || 40 || 5.7) kΩNow at high frequency the capacitance(C = 15 pF) will play its role. The small signalmodel for high frequency will be
0.5 kΩ
5 kΩ
C = 15 pF
V0
g Vm be
40 kΩ5.7 kΩ
10 kΩ
re =40 kΩ
0.1 kΩ
So, fH =
π
=
−π × × × ×
= 3.183 MHzSo, fH – fL = 3.18 MHz
© Copyright www.madeeasypublications.org
Multistage Amplifiers6
T1.T1.T1.T1.T1. (d)(d)(d)(d)(d)Given that ID = 0.4 mA and
= 0.8 mA/V2
= 0.8 mA/V2
So
= I = 1.13 mA/V
and =
=
The gain of the cascade connection will be ! − ×
gain = –1.13 mA/V × 2.5 kΩ = –2.85
© Copyrightwww.madeeasypublications.org
Feedback Amplifiers7
T4.T4.T4.T4.T4. (b)(b)(b)(b)(b)
Given that β >>
So the voltage gain
≈
+ β β
From the circuit we see that feedback factor βis
+=
=
+
So, β =
Voltage gain = –5 (because theamplifier is an inverting amplifier)
T5.T5.T5.T5.T5. (b)(b)(b)(b)(b)The feedback element is Rf it samples voltageand mix current so shunt-shunt feedback.
T1T1T1T1T1 (a)(a)(a)(a)(a)The overall forward gain is 1000 and close loopgain is 100. Thus, β = 0.009.Now, when gain of each stage increase by 10%then overall forward gain will be 1331 and usingthe previous value of β the close loop will be102.55.⇒ Close loop Voltage gain increase by 2.55%.
T2T2T2T2T2 It is voltage shunt
IS
–
+
90 Ω
Rf
v0
vf
+
–IfRf
β =
=
I
T3T3T3T3T3 It is voltage series ckt can be called as seriesshunt feedback.
© Copyright www.madeeasypublications.org
Oscillators8
T2.T2.T2.T2.T2. (a)(a)(a)(a)(a)
We need to find !""
x
Vx
C
C
R
R Vy
A
Va B
Nodal analysis at node A
# # #
−−+ +x = 0
Nodal analysis at node-B
#
−+ = 0
From abouve two equations
"
⎡ ⎤+ + −⎢ ⎥⎣ ⎦
= Vx
So, "
x=
+ +
T3.T3.T3.T3.T3. (a)(a)(a)(a)(a)
Now the value of
in the given circuit in same
as "
x
T1.T1.T1.T1.T1. (a)(a)(a)(a)(a)Consider the following circuit
A
2 R 2 L
RL
+
–
+
–
Vf Vo
First of all we will find the feedback factor
β =
$
$ $
⎛ ⎞ω= ⎜ ⎟ω + + ω⎝ ⎠
=
$
ω⎛ ⎞− −⎜ ⎟⎝ ⎠ω
For Barkhausen criteria we needAβ = 1
and imaginary part of Aβ should be equal to 0
So,
ω−ω
= 0
So, ω =
and f =
π
18 Electronics Engineering • Analog Circuits
© Copyrightwww.madeeasypublications.org
So, β =
+ +
=
$
$
ω− ω + ω
For Barkhausen criteria, we needAβ = 1 ∠0°
So, phase of β = 0So imaginary part of β = 0So 1 – ω2 C2 R2 = 0
ω =
T4.T4.T4.T4.T4. (a)(a)(a)(a)(a)The output can be ±12 V only,when output is 12 V then
R1
–
+
C
R2
P
10 kΩ
2 kΩ
10 kΩ
Vo
So, Vp = 6 Vwhen output is –12 V then
R1
–
+
C
R2
P
10 kΩ
2 kΩ
10 kΩ
Vo
So, Vp = –10 V
© Copyright www.madeeasypublications.org
Power Amplifiers9
T1.T1.T1.T1.T1. (a)(a)(a)(a)(a)Solving the given question at DC, assuming both the devices are in forward active region.
Q2
Q1
+9 V
12 kΩ
43 kΩ
9.1 kΩ
–9 V
24 Ωk
100 Ωk
β = 80
IIE2
IC2
–9 V
IC1
IE1
loop 1
IB1
IB2
loop 2
So KVL in loop-1
Ω + + ΩI I = 9
# Ω + ΩI I = 8.3
⇒ I = 4.06 µA
So, I =
=I
Now in loop-2
− Ω + Ω + − −I I I = 0
So,
Ω −I =
Ω + ΩI I
© Copyrightwww.madeeasypublications.org
20 Electronics Engineering • Analog Circuits
⇒ I = 2.006 µA
⇒ I = 0.184 mA and
I = 0.186 mA
So, now we can find = 0.186 mA and
= 7.85 V
So, Q-points will be (325 µA, 7.16 V) and (184 µV, 7.85 V).
T2.T2.T2.T2.T2. (c)(c)(c)(c)(c)The DC power = VCC × ICQ = 13 V × 5 mA = 65 mW
Now, at DC inductor act as short circuitSo, VCEQ = 8 V
PAC =
$
× × =
So, maximum efficiency = % &'(
)'(*+( × = ×
=
,
× =
© Copyright www.madeeasypublications.org
Operational Amplifiers10
T1.T1.T1.T1.T1. (c)(c)(c)(c)(c)
when diode is ON it is replaced by short circuitand the circuit can be drawn as shown below:
V0
–
+
0.5 kΩ
1 kΩ
VS
10 V
1 kΩ
Vo = –0.5 Vs – 5when diode is OFF then it is replaced by opencircuit and circuit can be drawn as shown below
v0
–
+
1 kΩ
VS
1 kΩ
vi=
Vo = –Vs
Thus, in 1 phase the slope of the transfercharacteristic should be –1 and in another phaseit should be –1/2. Hence, option (c) is correct.
T2.T2.T2.T2.T2. (b)(b)(b)(b)(b)output of op-amp 1
–R
V1
V2+
–
+Vin R
R
R
It is connected to schmitt trigger (invertingmode) → clockwise.But inverting amplifier + inverting schmitt trigger→ anticlockwise.
12
6–6
T3.T3.T3.T3.T3. (b)(b)(b)(b)(b)
Rif = i
+ β=
i
β Ab >> 1
v0
–
+
20 kΩ
Vf
If = 10 kΩ
vin
–+
2 kΩ
22 Electronics Engineering • Analog Circuits
© Copyrightwww.madeeasypublications.org
voltage shunt
v0
–
+
20 kΩ Vf
vin –
+
2 kΩ
10 kΩIf
10 kΩ
β =
= –1
β =I
=
−
β =
Rif =i
β =
×
=
× ×
Rif = 1 kΩ
T4.T4.T4.T4.T4. (b)(b)(b)(b)(b)Redrawing the circuit by replacing amplifier withits block diagram from the given propertiesRi = ∞ ; R0 = 0 ; voltage gain = AV
vin vin
AV
v0 vin= AV
iin
Rf
iin =
−
iin =
−=
[ ]
− −
Rin =i
=
−
T5.T5.T5.T5.T5. (b)(b)(b)(b)(b)
–
+
–
+
+–vin
10 kΩ
10 kΩ 10 kΩ
10 kΩ
Rf
RL
io
AB
C
i1i2
i3D
E
i3
From the circuit,VE = io RL
VE = VA (Virtual short concept)i1 = i2 = i3
If we apply KVL between node B and C,∴ VB = VC (Virtual short concept)
i1 = i2 = i3 =
Ω
VC – VD = i3 × 10 kΩ =
and VA – VB = i1 × 10 kΩ =
∴ VB = VC
⇒ VD – VE = –vin
∵ io =
−
T6.T6.T6.T6.T6. (c)(c)(c)(c)(c)If diode or BJT it is logarthmic amplifier.If MOSFET is kept in feedback then it is squareroot amplifier.
T7.T7.T7.T7.T7. (a)(a)(a)(a)(a)In the given circuit the op-amp diodecombination form a super diode and thiscomplicated question can be simplified byreplacing the op-amp diode combination by asingle ideal diode as shown below.
© Copyright www.madeeasypublications.org
23Workbook
RL
C
vin–
+Vo
Now this circuit is a simple clamper, thus answeris option (a).
T8.T8.T8.T8.T8. (c)(c)(c)(c)(c)It is inverting op-amp and there is no feedbackinthe ckt op amp will saturate to ± Vsat.
T9.T9.T9.T9.T9. (d)(d)(d)(d)(d)
V0 (t) = ( )
− ∫
=
− × ×× μ
At t = 2 mS
=
− × ×× μ
=
−−× ×
× 5 × 2 ×1 0–3
= – 0.5
2 5 7 10 12 150
v to( )
t S(m )–0.5
–1.0
–1.5
T10.T10.T10.T10.T10. (a)(a)(a)(a)(a)From the figure we can see that when input ispositive then diode is off and op-amp works inopen-loop with output equal to +Vsat.When the input is negative then the diode turnon and it get replaced by a 0.7 V battery, sonow output is equal to Vin – 0.7.So option (a) is correct.
© Copyrightwww.madeeasypublications.org
Function Generators, PLL &Wave Shaping Circuits11
T1.T1.T1.T1.T1. (c)(c)(c)(c)(c)From the Hysteresis voltage transfercharacteristic we can see that the Schimitttrigger has to be non-inverting.The saturation level is ±10 V and the upper andlower threshold are +3 V and –3 V respectively,so option (c) is correct according to allrequirements.
T2.T2.T2.T2.T2. (b)(b)(b)(b)(b)The saturation level of output are ±10 V.When output is –10 V then threshold voltage is–5 V so
–
+
ViVo
1
2 kΩ
R
Threshold voltage is
×
+
5 =
+
So, R1 = 2 kΩSimilarly when output is +10 V then threshold is+8 V so
–
+
ViVo
2 kΩR2
So,
×+
= s
20 = sR2 + 164 = sR2
R2 = 0.5 kΩ
T3.T3.T3.T3.T3. (c)(c)(c)(c)(c)First op-amp form a high pass filter with cut-offfrequency equal to 79.7 Hz.Second op-amp form a low pass filter with cut-offfrequency equal to 318.30 Hz. So the seriescombination of low pass filter and high passfilter form a band pass filter.
© Copyright www.madeeasypublications.org
25Workbook
T4.T4.T4.T4.T4. (d)(d)(d)(d)(d)
I1
I2
Q
Q
I Q
Q
M1 M2
Vi OutputC
B
A
Vi
t (ns)
t (ns)
t (ns)
t (ns)
A
B
C
40 43
43
433
3
83
86