7 월 둘째주

Weekly Meeting

0.1um T-Gate Technology (By EBMF-10.5)0.1um T-Gate Technology (By EBMF-10.5)

Kim Dae-Hyun

2002 / 7 / 9

7 월 둘째주

Weekly Meeting

Problem for Conv. Gate ProcessProblem for Conv. Gate Process

Dose=3nC/cm Dose=4nC/cm

SiN

PMMA650k

- PMMA-650K 를 이용한 0.1um T-Gate 정의 -

- Under Dose Cond. for single coating

- But, 0.25um line definition

- Foot Dose 에 관계없이 선폭 정의

=> Head Exp. 시 Bottom PMMA-650K 에너지 전달에 기인함 .

7 월 둘째주

Weekly Meeting

Introduction to Modified T-Gate Tech.Introduction to Modified T-Gate Tech.

< Reversed Double Exp. & Double Dev. >

Pre-passivated SiN- Reducing Back-scattering

Bottom PMMA Thick.- Affecting minimum line length

Parasitic Capacitance- f (PMMA, SiNx, etc)

Experiment Variables- SiN Thick., Dose, PMMA Thick.- Bottom Copolymer (Next)

7 월 둘째주

Weekly Meeting

Initial Experiment ResultsInitial Experiment Results

- PMMA=1000A / SiN=1500A & Head Dose Split -

Dose=30uC/cm2 Dose=40uC/cm2

Dose=50uC/cm2 Dose=50uC/cm2

PMMA=450A

7 월 둘째주

Weekly Meeting

Lg vs. 200A of SiNLg vs. 200A of SiN

Dose=3.75nC/cm Dose=4.0nC/cm

Dose=4.25nC/cm Dose=4.5nC/cm

=> Lg = 90 ~ 100nm on 200A SiNx Dielectric

7 월 둘째주

Weekly Meeting

Process OptimizationProcess Optimization

=> PMMA-650k(Initial 1000A) / SiN Etch (10% Over-etch)

Trade-off : Lg & (PMMA+SiN)

7 월 둘째주

Weekly Meeting

PMMA & Copolymer Thick. Vs RPMPMMA & Copolymer Thick. Vs RPM

Lg = 80nm

Dose=3.75nC/cm

Dose [n

C/cm]3.75 4.0 4.25 4.5

Lg [n

m]80 90 107 115

830A of PMMA