001-90292owner: rhoe rev **tech lead: ewoo nvram product overview new product presentation nvram...

001-90292 Owner: RHOERev ** Tech lead: EWOO

NVRAM Product Overview New Product Presentation

NVRAM ProductOverview

Cypress Provides the Industry’s Fastest andMost Energy-Efficient Nonvolatile RAM Solutions


Cypress Is the NVRAM Market Leader

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Cypress offers the largest portfolio of serial and parallel Nonvolatile Random Access Memory productsF-RAM™, the industry’s most energy-efficient serial NVRAMs

nvSRAM, the industry’s fastest parallel NVRAMs Cypress offers a broad portfolio of the industry’s most energy-efficient and reliable F-RAM productsF-RAM consumes 30% of the power of the most advanced EEPROM and offers 100,000,000 times the endurance

Densities range from 4Kb to 2Mb, and voltages range from 2.0 V to 5.5 V

SPI and I2C serial F-RAM products come in SOIC8, DFN8 and EIAJ packages

Real-time clocks and counters are also available on F-RAM products Cypress offers a wide range of the industry’s fastest parallel nvSRAM productsAccess times range from 20 ns to 45 ns with unlimited read/write cycle endurance

Densities range from 64Kb to 16Mb with 3.0 V and 5.0 V supply voltages and 1.8 V I/O voltages

Asynchronous x8, x16, x32 SRAM parallel interfaces come in a wide variety of package options

Integrated real-time clocks are also available on nvSRAM products

Cypress:Was first to produce F-RAM and nvSRAM products and has more than 25 years of experience

Continues to invest heavily in new products

Is committed to providing products that meet the most rigorous automotive and military standards

Assures long-term supply of F-RAM and nvSRAM products

Has shipped more than 1 billion NVRAM units

Cypress offers the industry’s fastest, most-energy-efficient and highest-reliability NVRAM solutions to capture and protect the world’s most critical data



Serial Nonvolatile Memory Terms

Nonvolatile Memory (NVM)Memory that retains its information on power loss

Nonvolatile Random Access Memory (NVRAM)A Nonvolatile Memory that allows direct access to stored data in any random order

Ferroelectric Random Access Memory (F-RAM) A fast-write, high-endurance, low-energy Nonvolatile Memory that uses ferroelectric technology to store data

Electrically Erasable Programmable Read-Only Memory (EEPROM)A common Nonvolatile Memory that uses floating-gate technology to store data

Page WriteA write to a fixed-length contiguous block of memory

Soak TimeThe 5 ms required to complete an EEPROM Page Write after the data is presented at the input buffers

Write EnduranceThe number of times a Nonvolatile Memory cell can be rewritten before it wears out

Wear LevelingA method to prolong EEPROM Write Endurance that uses an EEPROM with up to 8x excess capacity and a software

algorithm to move storage to unused memory addresses before the Write Endurance limit on an active address is reached

AEC-Q100A quality and reliability standard for automotive applications defined by the Automotive Electronics Council

3NVRAM Product Overview New Product Presentation


Serial NVM Design Problems1. Many electronic devices must reliably store system data in Nonvolatile Memory after power lossEEPROMs require a 5-ms continuation of active power per Page Write for Soak Time

Soak Time requires additional capacitors or batteries for a Page Write on power loss, which adds cost and reduces reliability

Mission-critical data may be subject to radiation and/or magnetic fields

2. Many data-logging applications exceed the 1 million write-cycle limitation of EEPROMWear Leveling is required to improve the Write Endurance of EEPROM over a product lifespan

Wear Leveling requires up to 8x the memory capacity and additional software, which increases cost

3. Systems using EEPROM have increased system power consumptionFor the 5 ms required for EEPROM Soak Time

For the processing required to do Wear Leveling

F-RAM solves these problemsRequires no Soak Time, eliminating the need for additional capacitors or batteries to complete a Page Write on power loss

Provides 100 trillion write cycles, eliminating the need for Wear Leveling

Consumes 2x to 5x less active power than EEPROM, thereby reducing system power

F-RAM cells are inherently gamma-radiation tolerant and are not corrupted by magnetic fields

Cypress F-RAM offers 100,000,000 times the endurance of EEPROM at 30% of the power



Serial F-RAM Is a Better Solution

Additional capacitor to maintain powerfor 5 ms per Page Write for Soak Time

Simplify a conventional, complex,

EEPROM-based design…

F-RAM pin-to-pin replacement for EEPROM SOIC8

By choosing F-RAM as your serial Nonvolatile Memory solution…

To produce better solutions for multiple applications at a lower cost, especially

for mission-critical applications.

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Automotive Electronics

Industrial Controls

Smart Meters

Multifunction Printers

Medical Devices

File System

Memory

Controller

Worn Cell

8x EEPROM capacity for Wear Leveling

2 x 256Kb for a 64Kb System

Wear Leveling software algorithm to increase EEPROM Write Endurance



Feature F-RAM F-RAM EEPROM NOR Flash

SPI Speed 40 MHz 33 MHz 20 MHz 50 MHz

I2C Speed 3.4 MHz 1 MHz 1 MHz N/A

Write Delay 0 ms 0 ms 5 ms 50 ms

Endurance(Cycles)

1014 1012 106 105

Active WriteCurrent1

3 mA 6 mA 10 mA 15 mA

Density Range 4Kb - 2Mb 4Kb - 2Mb 1Kb - 1Mb 4Mb - 512Mb

NonvolatileRetention

100 years 10 years 100 years 20 years

1 Conditions: Max current, SPI, 10 MHz to 40 MHz, 2.7 to 3.3 V, −40° C to +85° C

Cypress Serial NVRAM vs. Competition’s



Here’s How to Get Started1. Select Cypress serial F-RAM products in the F-RAM Product Selector Table

and click “Order” for free samples

2. Download the SPI Guide for F-RAM

3. Register to access online technical support: www.cypress.com

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Digital Hearing Aidsby Oticon

Infotainment System by Hyundai

Smart E-Meter by Landis + Gyr

Motor Control by SEW

Multifunction Printer by Ricoh

Automotive Safety System by Hyundai



Parallel Nonvolatile Memory Terms

Nonvolatile Memory (NVM)Memory that retains data on power loss

Nonvolatile Random Access Memory (NVRAM)A Nonvolatile Memory that allows direct access to stored data in any random order

Write EnduranceThe number of times a Nonvolatile Memory cell can be rewritten before it wears out

Silicon Oxide Nitride Oxide Silicon (SONOS) An insulating charge-storage layer in a transistor used to create a Nonvolatile Memory storage cell

Nonvolatile Static Random Access Memory (nvSRAM)Fast SRAM memory with a SONOS Nonvolatile Memory cell embedded in each SRAM cell to retain data on power loss

Battery-Backed SRAM (BBSRAM)SRAM memory connected to a lithium battery to retain data on power loss

Restriction of Hazardous Substances (RoHS)A European Union directive intended to eliminate the use of environmentally hazardous material in electronic components

Redundant Array of Independent Disks (RAID)A storage technology that uses two or more disk drives for redundancy or increased performance



1. Many systems require fast Nonvolatile Memories with high Write EnduranceTraditional EEPROM or Flash Nonvolatile Memories have slow write times (> 1 ms) and limited Write Endurance

Low-power asynchronous SRAMs have ~45 ns access times but require battery backup to store data on power loss

2. Batteries increase cost, add design complexity, and compromise reliability and RoHS complianceBatteries, power-management circuits and firmware add cost and complexity, and reduce reliability

Coin cell batteries have a limited lifetime, which mandates periodic system maintenance and downtime

Data is lost if battery charge is drained before the system power is restored, which mandates fast time-to-repair

Batteries contain heavy metals and violate RoHS compliance

nvSRAM solves these problemsProvides 20 ns read/write SRAM access time with unlimited endurance

Requires no batteries to retain data on power loss for unlimited periods

Stores data reliably at power loss without the need for external power-management circuits and firmware

Complies with RoHS requirements

Parallel NVM Design Problems

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Cypress RoHS-compliant nvSRAMs are significantly faster than traditional Nonvolatile Memories, and more reliable and easier to implement than BBSRAM solutions



Parallel nvSRAM Is a Better Solution

Battery-free parallel nvSRAM solution

By choosing nvSRAM as your parallel Nonvolatile Memory solution…

To produce more reliable solutions for mission-critical applications at

a lower cost.

Battery required to retain data on power loss

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Extra board area for battery

Standard SRAM memory

Simplify a complex BBSRAM-based design…

RAID Storage

Industrial Automation

Computing and Networking

Avionics and Defense

Electronic Gaming



1 Low-power 16Mb asynchronous SRAM2 Conditions: Max current, x16, 45 ns (nvSRAM), 45 ns (asynchronous SRAM), 35 ns (MRAM), 2.7 to 3.6 V, −40° C to +85° C

Feature nvSRAMAsynchronousSRAM1 + Battery

MRAM

Access Time 20 ns 45 ns 35 ns

Write Delay 0 ms 0 ms 0 ms

Battery Requirement No Yes No

Endurance (Cycles) Unlimited Unlimited Unlimited

Active Write Current2 75 mA 50 mA 180 mA

Density Range 256Kb - 16Mb 64Kb - 64Mb 256Kb - 16Mb

RoHS Compliant Yes No Yes

Nonvolatile Retention 20 years N/A 20 years

Magnetic Damage Risk No No Yes

CY Parallel NVRAM vs. Competition’s



Here’s How to Get Started1. Select Cypress parallel nvSRAM products in the nvSRAM Product Selector Table

and click “Order” for free samples

2. Download the App Note: A Comparison Between nvSRAMs and BBSRAMs

3. Register to access online technical support: Cypress.com

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Programmable Logic Controller by Siemens

Slot Machineby IGT

Routerby Cisco

Avionics Subsystemby Rockwell Collins

RAID Card by LSI


001-90292owner: rhoe rev **tech lead: ewoo nvram product overview new product presentation nvram...

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