半導體雷射導論 introduction to semiconductor lasers

8/9/2019 Introduction to Semiconductor Lasers

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()

()


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- II -

p-np-n

E-k


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- III -

L-I

DFB


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- IV -

SPIE

A. E. Siegman

2008


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1

2/2! ! 3!

2/3! ! 5!

2/3/2! q.o ! 7!

2/3/3! ! 8!

2/3/4! ! :!

2/3/5! ;! ! 22!

2/4! ! 23!

2/5! ! 25!

! 29!

! 2:!

21

3/2! ! 33!

3/2/2! ! 33!

3/2/3!Lspojh.Qfoofz ! 37!

3/2/4! F.l ! 46!

3/2/5! ! 54!

3/3 ! 57!

3/3/2 ! 57!

3/3/3 ! 66!

3/4 71 ! !

3/4/2! Gfsnj.Ejsbd ! 71!


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- VI -

3/4/3!Cpmu{nboo Kpzdf.Ejypo ! 79!

3/4/4!! 85!

3/4/5!! 91!

3/4/6! ! :4!

3/5!! :7!

3/6! ! 215!

3/6/2! ! 216!

3/6/3! ! 21:!

3/7! ! 225!

3/7/2 ! 225!

3/7/3 ! 229!

3/7/4 ! 235!

! 239!

! 241!

133

4/2! qo ! 247!

4/2/2! ! 249!

4/2/3! ! 254!

4/2/4! ! 25:!

4/2/5!! 265!

4/3! ! 268!

4/3/2! ! 268!

4/3/3! ! 272!

4/3/4! ! 278!

4/3/5! ! 283!

4/4! s ! 287!

4/4/2! ! 287!


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- VII -

4/4/3! ! 295!

4/4/4! ! 29:!

4/4/5! ! 2:3!

! 311!

! 313!

203

5/2!! 315!

5/2/2!317 ! !

5/2/3!! 322!

5/2/4! ! 326!

5/2/5! ! 332!

5/3! ! 337!

5/3/2! ! 338!

5/3/3! ! 344!5/4! ! 349!

5/4/2! ! 349!

5/4/3! 35 ! !:

5/4/4!! 364!

5/5! ! 368!

5/6! 375 ! !

5/7! ! 37:!

! 384!

! 386!

277


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- VIII -

6/2! ! 38:!

6/3!! 394!

6/3/2! ! 394!

6/3/3! 3:3 ! !

6/3/4! ! 3:9!

6/4! ! 413!

6/4/2!! 413!

6/4/3! ! 41:!

6/4/4! ! 423!

6/5! ! 424!

6/6! ! 42:!

6/6/2! ! 434!

6/6/3!! 438!

6/6/4! ! 442!

6/6/5!! 446!

6/7! ! 44:!

! 462! ! 467!

!

J! ! 468!

JJ! ! 469!

JJJ! ! 46:!

JW! ! 471!

!

! 472!

!


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1.1 1.21.31.4


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- 2 -

(Heterojunction)

(Double Heterojunction, DH)

(Zhores I. Alferov Herbert Kroemer) 2000

1958 Schawlow Townes

[1] Maiman 1960 (Ruby Laser)

[2] 1961

1962 (GaAs)

[3-5]

p-n

(Homojunction) p-n (depletionregion)(recombination) p-n (resonant cavity)(threshold current density)(Jth > 50 KA/cm2)(pulsed mode)

2/2!!! !


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- 3 -

1963 Kroemer Alferov (doubleheterojunction)(bandgap)(continuous mode) 1969 KresselHayashi Alferov(liquid-phase epitaxy, LPE) GaAs/AlxGa1-xAs Jth = 5 KA/cm

2

1970 Hayashi Alferov

Jth 1.6

KA/cm2

(reliability) 1976 (acceleratedlife test) 5104

1977

CD

1980 (vapor-phase epitaxy, VPE)

(molecular-beam epitaxy, MBE)

(quantum well)(active layer)( 300 )

(modulation response)


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- 4 -

(distributed feedback,DFB)(single mode)[6](vertical cavity surface emitting laser, VCSEL)(edge emitting laser, EEL) p-n

(quantum wire)(quantum dot)(photonic crystal)[7]

1-1

(1)

(gain medium)

(2) (pump excitation)

(3)

(4)(output coupler)

2/3!!! !


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- 5 -

p

n

1-2

x

z

y

R1

R2

1-1


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- 6 -

1-2 (edge emitting laser, EEL)

p n

p-n n p

(recombination)(waveguide) p-n

(cleaved facet)

p-n

1-3(a) p-n V= 0 (band diagram)(conduction band)

(valence band)

(Fermi level)

(thermal equilibrium) p-n

(energy barrier)(diffusion)Eg/e (Eg

2/3/2!!! q.o !


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- 7 -

e )

(quasi Fermi level)Eg n p

p n

1-3(c)

Eg

1-4(a)

n2

n1

1-4(b)

(critical angle)

y

(

)

1-4(a)

2/3/3!!! !


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- 8 -

~g

hv E

n p

(c) V~

'gE

/g

E e

(b) V~

n p

'g

E

/gE e

gE

1-3 p-n(a) V= 0(b) V= Eg/e

(c)

n p

gE

'g

E

(a) V= 0

y

E


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- 9 -

n p

nr:

nr

n2

n1

y

(a)

(b)

1-4 (a)()()

(b)

(non-radiative recombination) (radiativerecombination)

2/3/4!!! !

n1

n1

n2

p

n


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- 10 -

(spontaneous emission)(stimulated emission)1-5

(phase)(light emitting diode, LED)

(coherent)(monochromatity)(directionality)(gain coefficient)

(direct bandgap)(density ofstates)

()

(a) (b)

1-5 (a)(b)


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- 11 -

(Ith)

1-6 (absorption)(loss)(scattering)

(population inversion)

LED

(transparency condition)

(laser threshold)(threshold current)

(internal quantum efficiency)100

2/3/5!!! ;!

)mbtfs!uisftipme*!


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- 12 -

(1) ( 100 cm-1 )

2/4!!! !

P()

I()

Ith

1-6


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- 13 -

(2)

p-n

(3) 1-3(c)()

(4)

(5)

(6)(analog)(digital)

GHz

(7)(gain bandwidth)( nm)

nm

(8)


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- 14 -

(9)

(10)

(11)

(optoelectronicintegrated circuit, OEIC)

[8]

[9]

[10]

1-7

2/5!!! !


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- 15 -

(defect) 1-7 (compound)E= h

Eg Eg

()

1.24

gE (1-1)

As Ga Al AlxGa1-xAs (ternary)(alloy) Eg(x) = 1.424+1.247x (0 x 0.45)(eV) CD

( 780 nm) P

GaAl In In0.5(AlxGa1-x)0.5P (quaternary) Eg(x) = 1.91+0.61x (0 x 0.53)

LED DVD

(N) Ga,Al In

LED

(380 nm) (550 nm)

DVD 405 nm 405 nm


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- 16 -

1-7 (lattice constant)

1-8

( 1-8 )

2000

(VCSEL)

(EEL)VCSEL


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- 17 -

(longitudinal mode)

VCSEL

DVD

1-8 2006 2007

( Laser Focus World 2007)


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- 19 -

1. A. L. Schawlow and C.H. Townes, Infrared and Optical Masers,Phys. Rev.112, 1940 (1958)

2. T. H. Maiman, Stimulated Optical Radiation in Ruby Nature187,493 (1960)

3. R. N. Hall, G. E. Fenner, J. D. Kingsley, T. J. Soltys, and R. O.Carlson, Coherent Light Emission from GaAs Junctions Phys. Rev.

Lett.9, 366 (1962)

4. T. M. Quist, R. H. Rediker, R. J. Keyes, W. E. Krag, B. Lax, A. L.McWhorter, H. J. Zeigler, Semiconductor maser of GaAs Appl.

Phys. Lett.1, 91 (1962)

5. N. Holonyak Jr. and S. F. Bevacqua, Coherent Visible LightEmission From Ga(As1-xPx) Junctions Appl. Phys. Lett. 1, 82

(1962)

6. Shing-Chung Wang, Tien-Chang Lu, Chih-Chiang Kao, Jong-TangChu, Gen-Sheng Huang, Hao-Chung Kuo, Shih-Wei Chen,

Tsung-Ting Kao, Jun-Rong Chen, and Li-Fan Lin, Optically Pumped

GaN-based Vertical Cavity Surface Emitting Lasers: Technology and

Characteristics Jpn. J. Appl. Phys., V46, No. 8B, pp5397-5407,

(2007)

7. T. C. Lu, S. W. Chen, L. F. Lin, T. T. Kao, C. C. Kao, P. C. Yu, H. C.

!


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- 20 -

Kuo, S. C. Wang and S. H. Fan, GaN-based two-dimensional

surface-emitting photonic crystal lasers with AlN/GaN distributed

Bragg reflectors Appl. Phys. Lett.,92, 011129 (2008)

8. Y. Suematsu, Proc. IEEE71 , 692 (1983)9. R. A. Bartolini, A. E. Bell, and F. W. Spong. IEEE J. Quantum.

Electron.QE-17, 69 (1981)

10.S. K. Ghandhi, R. Siviy, and J. M. Borrego, The growth of the oxidefilms at room temperature Appl. Phys. Lett. 34, 835 (1979)


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I n t r o d u c t i o n t o

semiconductor lasers.

--. -- , 2008.09

.

ISBN 978-957-11-5299-8

1. 2.

448.68 97012960

5D92

Introduction to Semiconductor Lasers

(395.7) (6.3) 1063394

(02)2705-5066 (02)2706-6100

http://www.wunan.com.tw

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半導體雷射導論 introduction to semiconductor lasers

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