WiMAX

1 2 2 2

(GaAs)(PHEMT)

(WiMAX) 2.6 GHz

(HMIC)WiMAX 2.5 2.69 GHz

(MMDS)WiMAX2.6 GHzWiMAX

(NF) 2 dB 8 dB 1 dB(IP1 dB)

0 dBm(IIP3) 7.5 dBm 1.8 V

8 mW

1 2

2008, 24, 11-20

97 3 20 97 6 5

12

Design of Low-Noise Amplifier with Out-of-Band Termination for

WiMAX Applications

Jian-Ming Wu* Neng-Kai Yang** Deng-Yang Tsao** Simon C. Li**

Abstract

A 2.6 GHz highly linear low-noise amplifier (LNA) is designed and implemented in hybrid microwave integrated circuit (HMIC) using GaAs pseudomorphic high electron mobility transistor (PHEMT) for WiMAX applications. The center frequency of a WiMAX LNA is designed at 2.6 GHz due to the selection of U.S. multi-point microwave distribution system (MMDS) band of frequency range from 2.5 to 2.69 GHz. The proposed design is based on the out-of-band termination. The second-order harmonic of a WiMAX LNA presents low impedance for grounding due to the out-of-band termination. A LNA eliminating the second-order nonlinear term enhances the linearity significantly. The crucial measured results form a WiMAX LNA in a noise figure (NF) is less than 2 dB, a power gain is greater than 8 dB, an input 1 dB compression point (IP1 dB) is equal to 0 dBm, and an input third-order intercept point (IIP3) is equal to 7.5 dBm. A supply voltage of 1.8 V is used and a power consumption is 8 mW.

Key Words: Low-noise amplifier (LNA), out-of-band termination, linearization, WiMAX.

* Assistant Professor, Department of Electronic Engineering, National Kaohsiung Normal University. ** Professor, Graduate, Institute of Communication Engineering, National University of Tainan.

WiMAX 13

(Wireless local area network, WLAN)(Cellular network)[1][2]IEEE 802.16 (Worldwide interoperability for microwave access, WiMAX)[3]WiMAX (Orthogonal frequency division multiplexing, OFDM)

(1)(Source degeneration)[4](2)(Predistortion) [5](3)(Postdistortion)[6](4)(Feedforward)[7]-[9](5)(Diode linearizer)[10](6)(Out-of-band termination)[11]-[17]

(Single chip)

(Third-order intermodulation product, IM3)(Noise figure, NF)

WiMAX(GaAs)(Enhancement mode pseudomorphic high electron mobility transistor, E-PHEMT) WiMAX Agilent Technologies E-PHEMT [18](Hybrid microwave integrated circuit, HMIC)

(Feedback)(Re-mixing)(Source impedance) E-PHEMT vs

14

vgsCgsidgm E-PHEMT Z1 Z2 [17](Input third-order intercept point, IIP3)

3 31 1

1 ,6Re( ( )) ( ) ( ) ( ,2 )

IIPZ H A

=

(1)

= 2f (Two-tone) f = 2ff H()A1()

22

31 1

2 2 1( , 2 ) .3 ( ) (2 )gg

g g g g

= + + + (2)

(2) g1g2 g3 Volterra k() A1()Z2 Z1()H() A1() WiMAX (, 2)(, 2)

Z1

Cgs+vgs-

Z2

id=gmvgs

G D

S

vs

E-PHEMT

E-PHEMT

21

1(2 ) ,Zg

>> (3)

E-PHEMT (Unity-gain frequency) fT

1 2 ,gs

gC

>> (4)

1 2(2 ) (2 ),

2T

Z Zff

WiMAX 15

4

11

3 31 1

( ) 11 6 ( )

,2 R e ( ( ) ) ( ) ( )

G S t

D

V V gI Z

I IPZ H A

+

(6)

VGS-Vt E-PHEMT (Thresold voltage)ID

(6) 1( )Z

WiMAX WiMAX 1( )Z

WiMAX WiMAX(Multi-point microwave distribution system, MMDS) 2.5 2.69 GHz

WiMAX WiMAX (Heterodyne architecture)

WiMAX 2.5 2.69 GHz MMDS 2.6 GHz WiMAX WiMAX [3](Cascade) WiMAX 8 dB1.5 dB 5 dBm WiMAX

Q1 LS LD WiMAX (Q2 Q3)(R1R2 R3)(L1) 2.52.69 GHz2.52.69 GHz 2.5 2.69 GHz 2.5 2.69 GHz

RFBPF LNA

VGADownConverter

LO

RF IF

IFBPF

WiMAX

16

WiMAX

RF BPF LNA Down Converter VGA IF BPF Power Gain (dB) -0.35 8 10 46/25 -0.1 NF (dB) 0.35 1.5 10 7/30 0.1 IIP3 (dBm) 100 5 -5 23/17 100 Cascade Power Gain (dB) -0.35 7.65 17.65 63.65/42.65 63.55/42.55 Cascade NF (dB) 0.35 1.85 4.88 4.98/13.06 4.98/13.06 Cascade IIP3 (dBm) 100 5 -5.04 22.93/15.22 22.83/15.12

Input MatchingNetwork

LD

RFinQ1

Q2

LS

VDD

Q3

C1C2

R1 R2

R3

RFout

Vdc

C3L1

Ibias

ID

Output MatchingNetwork

Bias Circuitfor

Out-of-BandTermination

WiMAX

WiMAX Agilent Technologies GaAs E-PHEMT Agilent Technologies GaAs E-PHEMT -(I-V) 1.8 V 8 mWWiMAX 23 mm 18 mm WiMAX R&S ZVB8 Mini-Circuits NC346C R&S FSP R&S SMJ 100A R&S FSP 1 dB (Input 1 dB compression point, IP1 dB)

0 0.5 1 1.5 2

VDS (V)

0

1

2

3

4

5

6

7

8

9

10

I DS

(mA

)

Agilent Technologies GaAs E-PHEMT I-V

WiMAX 17

WiMAX

Vector Signal GeneratorR&S SMJ 100A

Network AnalyzerR&S ZVB8

Spectrum AnalyzerR&S FSP

WiMAX LNA

Noise SourceMini-Circuits NC346C

Vector Signal GeneratorR&S SMJ 100A

Network AnalyzerR&S ZVB8

Spectrum AnalyzerR&S FSP

WiMAX LNA

Noise SourceMini-Circuits NC346C

WiMAX

WiMAX 2.5 2.69 GHz WiMAX 1 dB 2 dB 2.5 2.69 GHz 8 dB 2.6 GHz 1.5 dB 8.1 dB WiMAX

18

2.5 2.55 2.6 2.65 2.7

Frequency (GHz)

0

1

2

3

4

5

Noi

se F

igur

e (d

B)

5

6

7

8

9

10

Power G

ain (dB)

Power GainNoise Figure

WiMAX

2.6 GHz 20 MHz WiMAX(Channel bandwidth)WiMAX 1 dB 0 dBm 7 dBm 7.5 dBm WiMAX WiMAX 7.5 dBm WiMAX [9], [19]-[21] WiMAX 1 dB

-25 -20 -15 -10 -5 0 5 10

Input Power (dBm)

-70

-60

-50

-40

-30

-20

-10

0

10

20

Out

put P

ower

(dB

m)

IIP3=7.5dBmIP1 dB=0dBm

Fundamental

IM3

WiMAX

WiMAX 19

WiMAX

Reference Frequency (GHz) IIP3

(dBm) P1 dB

(dBm) NF

(dB) Power Gain

(dB) Pdiss

(mW) This Design 2.6 7.5 0 1.5 8.1 8

[9] 2.6 3 -13 2.95 15.2 17 [19] 2.4 4 -7 2.9 10.1 11.7 [20] 0.9 6.7 -7 3 12.2 20 [21] 2.45 -1.5 --- 2.88 14.7 10.5

WiMAX 2.6 GHz 2.5 2.69 GHz WiMAX 1.8 V 8 mW 2 dB 8 dB 1 dB 0 dBm 7.5 dBm

NSC 96-2221-E-017-014

[1] IEEE Std 802.11a-1999, Part11: wireless LAN medium access control (MAC) and physical layer (PHY) specifications: high-speed physical layer in the 5 GHz band, IEEE Standard, Dec. 1999.

[2] Juha Korhonen (2003). Introduction to 3G Mobile Communication, MA: Artech House Inc. [3] IEEE Std. 802.16e/D6, Part 16: Air interface for fixed broadband wireless access system,

Amendment 2: for physical and medium access control layers for combined fixed and mobile operation in licensed band, IEEE Standard, Feb. 2005.

[4] B. Razavi (2001). Design of Analog CMOS Integrated Circuits, NY: McGraw- Hill Inc. [5] G. Vitzilaios, Y. Papananos, Theodoratos, and G. K. S. Vryssas (2006). Magnetic-feedback-

based predistortion method for low-noise amplifier linearization, IEEE Trans. Circuits Syst. II, Exp. Briefs, 53, 1441- 1445.

[6] N. Kim, V. Aparin, K. Barnett, and C. Persico (2006). A cellular-band CDMA 0.25 m CMOS LNA linearized using active post-distortion, IEEE J. Solid-State Circuits, 41, 130-134. July 2006.

[7] F. Iturbide-Sanchez, H. Jardon-Aguilar, and J. A. Tirado-Mendez (2002). Comparison of different high-linear LNA structures for PCS applications using SiGe HBT and low bias voltage, Electron. Lett., 38, 536-538.

[8] Y. S. Youn, J. H. Chang, K. J. Koh, Y. J. Lee, and H. K. Yu (2003). A 2GHz 16 dBm IIP3 low noise amplifier in 0.25 um CMOS technology, IEEE Int. Solid-State Circuits Conf., paper 25.7.

20

[9] H. Y. Liao, Y. T. Lu, J. D. S. Deng, and H. K. Chiou (2007). Feed-forward correction technique for a high linearity WiMAX differential low noise amplifier, Radio-Frequency Integration Technology, 218-221.

[10] E. Taniguchi, T. Ikushima, K. Itoh, and N. Suematsu (2003). A dual bias-feed circuit design for SiGe HBT low-noise linear amplifier, IEEE Trans. Microw. Theory Tech., 51, 414-421.

[11] K. Vennema (1996). Ultra low noise amplifiers for 900 and 2000 MHz with high IIP3, Philips Semiconductors App. Note.

[12] V. Aparin and C. Persico (1999). "Effect of out-of-band terminations on intermodulation distortion in common-eminer circuits," in IEEE MTT-S Int. Microwave Symp. Dig., 977-980.

[13] K. L. Fong (2000). High-frequency analysis of linearity improvement technique of common-emitter trans-conductance stage using a low-frequency trap network, IEEE J. Solid-State Circuits, 35, 1249-1252.

[14] P. Shah, P. Gazzerro, V. Aparin, R. Sridhara, and C. Narathong (2000). A 2 GHz low distortion low-noise two-stage LNA employing low-impedance bias terminations and optimum inter-stage match for linearity, in Proc. Europ. Solid-State Circ. Conf., 213-216.

[15] J. Vuolevi and T. Rahkonen (2000). The effects of source impedance on the linearity of BJT common-emitter amplifiers, IEEE Int. Symp. on Circ. and Syst., 197-200.

[16] J. Lee, G. Lee, G. Niu, J. D. Cressler, J. H. Kim, J. C. Lee, B. Lee, and N. Y. Kim (2002). The design of SiGe HBT LNA for IMT-2000 mobile application, in IEEE MTT-S Int. Microwave Symp. Dig., 1261-1264.

[17] V. Aparin and L. E. Larson (2003). Linearization of monolithic LNAs using low-frequency low-impedance input termination, Europ. Solid-State Circ. Conf., 137-140.

[18] Agilent ATF-55143 low noise enhancement mode pseudomorphic HEMT in a surface mount plastic package, Data Sheet, Agilent Technologies, 2004.

[19] L. H. Lu, H. H. Hsieh, and Y. S. Wang (2005). A compact 2.4/5.2-GHz CMOS dual-band low-noise amplifier, Microwave and Wireless Components Lett., 15, 685-687.

[20] W. Zhuo, S. Embabi, J. Pineda de Gyvez, and E. Sanchez-Sinencio (2000) Using capacitive cross-coupling technique in RF low noise amplifiers and down-conversion mixer design, in Proc. Europ. Solid-State Circ. Conf., 116-119.

[21] R. Point, M. Mendes, and W. Foley (2002). A differential 2.4GHz switched-gain CMOS LNA for 802.11b and Bluetooth, IEEE Conference on Radio and Wireless, 221-224.