Workshop Workshop on Advanced Methodon Advanced Methodss for Interpretation of for Interpretation of

TEM, XTEM, X--Ray and SIMS MeasurementRay and SIMS Measurementss ininNanoNano and Atomic Scaleand Atomic Scale

11--3 June 20053 June 2005, , INSTITUTE OF PHYSICSINSTITUTE OF PHYSICS,, PASPASWarsawWarsaw, , PolandPoland

http://http://info.ifpan.edu.plinfo.ifpan.edu.pl//cepheuscepheus//WorkshopWorkshop/WORKSHOP2005.htm/WORKSHOP2005.htmChairChair Person : Person : S.KretS.Kret EE--mailmail: : kret@ifpan.edu.plkret@ifpan.edu.pl

MethodsMethods::●● Synchrotron Synchrotron RRadiationadiation (XRSR, EXAFS, GIDAFS)(XRSR, EXAFS, GIDAFS)●● Transmission Electron Microscopy Transmission Electron Microscopy

(EELS(EELS, , TEM, HRTEM)TEM, HRTEM)●● Secondary Ion Mass Spectroscopy (SIMS) Secondary Ion Mass Spectroscopy (SIMS) ●● Advanced Processing of Raw Data Advanced Processing of Raw Data ●● Modeling :Modeling :

MMolecular Dynamics (MD)olecular Dynamics (MD)Finite Element Methods (FEM).Finite Element Methods (FEM).

Object of Investigations:Object of Investigations:●● Quantum Quantum HeterostructuresHeterostructures●● Integrated DevicesIntegrated Devices●● NanocrystallineNanocrystalline MaterialsMaterials

Invited Speakers:Invited Speakers:M. M. BersaniBersani ((PovoPovo--TrentoTrento, Italy), Italy)Ultra Ultra sshallow depth hallow depth pprofilingrofiling by SIMS in microelectronic materials and processes by SIMS in microelectronic materials and processes S. S. HovmöllerHovmöller (Stockholm, Sweden)(Stockholm, Sweden)Computer aided electron crystallography as powerful tool to struComputer aided electron crystallography as powerful tool to structure determinationcture determination

V. V. HolýHolý ((MasarykMasaryk,, Czech Republic) Czech Republic) XX--ray investigation of selfray investigation of self--organized semiconductor nanostructuresorganized semiconductor nanostructures

M. M. HÿtchHÿtch ((VitryVitry--sursur--SeineSeine, France), France)Geometric phase analysis for measuring strain in nanostructures:Geometric phase analysis for measuring strain in nanostructures: challenges and challenges and recent advances.recent advances.I. I. DemchenkoDemchenko (Warsaw, Poland)(Warsaw, Poland)EXAFS as a tool for investigation the local environment of EXAFS as a tool for investigation the local environment of GeGe atoms in buried lowatoms in buried low--dimensionaldimensional structuresstructures

P. GalindoP. Galindo ((CádizCádiz, Spain), Spain)The Peak Pairs strain mapping algorithm and its application to HThe Peak Pairs strain mapping algorithm and its application to HRTEM imagesRTEM imagesE. Knudsen E. Knudsen ((RoskildeRoskilde, Denmark), Denmark)Algorithms and Algorithms and iinstrumentationnstrumentation for generating 3d grain maps in for generating 3d grain maps in polycrystalspolycrystals by 3DXRDby 3DXRDB. B. PałoszPałosz (Warsaw, Poland)(Warsaw, Poland)Diffraction study of Diffraction study of nanocrystalsnanocrystals under ambient and nonunder ambient and non--ambient conditionsambient conditionsH. H. RenevierRenevier ((GrenobleGrenoble, France), France)Grazing Incidence Anomalous Diffraction and Diffraction AnomalouGrazing Incidence Anomalous Diffraction and Diffraction Anomalous Fine Structure s Fine Structure (GIDAFS) to study nanostructures(GIDAFS) to study nanostructuresA. A. RosenauerRosenauer (Bremen, Germany)(Bremen, Germany)Composition evaluation by lattice fringe analysis (CELFA) in semComposition evaluation by lattice fringe analysis (CELFA) in semiconductors iconductors nanostructures investigationnanostructures investigationA. Sanchez A. Sanchez (Universidad de (Universidad de CádizCádiz, Spain), Spain)

PlasmonPlasmon peak in EEpeak in EELLS. The beginning of a new technique to determine the strain in S. The beginning of a new technique to determine the strain in semiconductor semiconductor heterostructuresheterostructuresK. K. ScheerschmidtScheerschmidt ((HalleHalle, Germany), Germany)

Molecular dynamics modeling for enhanced interpretation of TEM iMolecular dynamics modeling for enhanced interpretation of TEM imagesmages

by courtesy of S. by courtesy of S. HovmöllerHovmöller by courtesy of B.Pałosz

by courtesy of H. Renevier

by courtesy of V. Holý

by courtesy of M. Bersani

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Plasmon EmaxEmax shift Image

by courtesy of A.Sanchez

by courtesy of K. Scheerschmidt

Cross-sectional HREM image of the interface of two (100) silicon wafer bonded in UHV MD generated structures

by courtesy of P. galindo

by courtesy of E. Knutsen

3D grain in polycrystals by 3DXRD.