tle208x, tle208xa, tle208xy excalibur high … · excalibur high-speed jfet-input operational...

TLE208x, TLE208xA, TLE208xYEXCALIBUR HIGH-SPEED JFET-INPUT

OPERATIONAL AMPLIFIERSSLOS182B – FEBRUARY 1997 – REVISED JUNE 2001

1POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Direct Upgrades to TL05x, TL07x, andTL08x BiFET Operational Amplifiers

Greater Than 2× Bandwidth (10 MHz) and3× Slew Rate (45 V/µs) Than TL08x

On-Chip Offset Voltage Trimming forImproved DC Performance

Wider Supply Rails Increase DynamicSignal Range to ±19 V

description

The TLE208x series of JFET-input operational amplifiers more than double the bandwidth and triple the slewrate of the TL07x and TL08x families of BiFET operational amplifiers. The TLE208x also have widersupply-voltage rails, increasing the dynamic-signal range for BiFET circuits to ±19 V. On-chip zener trimmingof offset voltage yields precision grades for greater accuracy in dc-coupled applications. The TLE208x arepin-compatible with lower performance BiFET operational amplifiers for ease in improving performance inexisting designs.

BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, withoutsacrificing the output drive associated with bipolar amplifiers. This makes these amplifiers better suited forinterfacing with high-impedance sensors or very low level ac signals. They also feature inherently better acresponse than bipolar or CMOS devices having comparable power consumption.

Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken toobserve common-mode input-voltage limits and output voltage swing when operating from a single supply. DCbiasing of the input signal is required and loads should be terminated to a virtual ground node at mid-supply.Texas Instruments TLE2426 integrated virtual ground generator is useful when operating BiFET amplifiers fromsingle supplies.

The TLE208x are fully specified at ±15 V and ±5 V. For operation in low-voltage and/or single-supply systems,Texas Instruments LinCMOS families of operational amplifiers (TLC- and TLV-prefix) are recommended.When moving from BiFET to CMOS amplifiers, particular attention should be paid to slew rate and bandwidthrequirements and output loading.

For BiFET circuits requiring low noise and/or tighter dc precision, the TLE207x offer the same ac response asthe TLE208x with more stringent dc and noise specifications.

Copyright 2001, Texas Instruments IncorporatedPRODUCTION DATA information is current as of publication date.Products conform to specifications per the terms of Texas Instrumentsstandard warranty. Production processing does not necessarily includetesting of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

LinCMOS is a trademark of Texas Instruments.

TLE208x, TLE208xA, TLE208xYEXCALIBUR HIGH-SPEED JFET-INPUTOPERATIONAL AMPLIFIERSSLOS182B – FEBRUARY 1997 – REVISED JUNE 2001

2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

TLE2081 AVAILABLE OPTIONS

PACKAGED DEVICESCHIP

TAVIOmaxAT 25°C

SMALLOUTLINE

(D)

CHIPCARRIER

(FK)

CERAMICDIP(JG)

PLASTICDIP(P)

CHIPFORM

(Y)

0°C to 70°C 3 mV TLE2081ACD TLE2081ACP —0°C to 70°C

6 mV TLE2081CD— —

TLE2081CP TLE2081Y

40°C to 85°C 3 mV TLE2081AID TLE2081AIP–40°C to 85°C

6 mV TLE2081ID— —

TLE2081IP—

55°C to 125°C3 mV TLE2081AMFK TLE2081AMJG

–55°C to 125°C 6 mV — TLE2081MFK TLE2081MJG — —

† The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2081ACDR).‡ Chip forms are tested at TA = 25°C only.


PACKAGED DEVICES

TAVIOmaxAT 25°C

SMALLOUTLINE

(D)

CHIPCARRIER

(FK)

CERAMICDIP(JG)

PLASTICDIP(P)

CHIP FORM(Y)

0°C to 70°C 4 mV TLE2082ACD TLE2082ACP0°C to 70°C

7 mV TLE2082CD— —

TLE2082CP—

40°C to 85°C 4 mV TLE2082AID TLE2082AIPTLE2082Y–40°C to 85°C

7 mV TLE2082ID— —

TLE2082IPTLE2082Y

55°C to 125°C4 mV TLE2082AMD TLE2082AMFK TLE2082AMJG TLE2082AMP

–55°C to 125°C 7 mV TLE2082MD TLE2082MFK TLE2082MJG TLE2082MP —

‡ The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2082ACDR).‡ Chip forms are tested at TA = 25°C only.


PACKAGED DEVICESCHIP

TAVIOmaxAT 25°C

SMALLOUTLINE

(DW)

CHIPCARRIER

(FK)

CERAMICDIP(J)

PLASTICDIP(N)

CHIPFORM

(Y)

0°C to 70°C 4 mV TLE2084ACDW TLE2084ACN —0°C to 70°C

7 mV TLE2084CDW— —

TLE2084CN TLE2084Y

55°C to 125°C4 mV TLE2084AMFK TLE2084AMJ

–55°C to 125°C 7 mV — TLE2084MFK TLE2084MJ — —

† The DW packages are available taped and reeled. Add R suffix to device type (e.g., TLE2084ACDWR).‡ Chip forms are tested at TA = 25°C only.




1

2

3

4

8

7

6

5

OFFSET N1IN –IN +

VCC–

NCVCC+OUTOFFSET N2

3 2 1 20 19

9 10 11 12 13

4

5

6

7

8

18

17

16

15

14

NCVCC+NCOUTNC

NCIN –NC

IN +NC

NC

OF

FS

ET

N1

NC

NC

NC

NC

V N

CO

FF

SE

T N

2N

C

CC

–

TLE2081D, JG, OR P PACKAGE

(TOP VIEW)

TLE2081FK PACKAGE(TOP VIEW)

1

2

3

4

8

7

6

5

1OUT1IN–1IN +VCC–

VCC+2OUT2IN–2IN+

3 2 1 20 19

9 10 11 12 13

4

5

6

7

8

18

17

16

15

14

NC2OUTNC2IN–NC

NC1IN–

NC1IN+

NC

NC

1OU

TN

C

NC

NC

NC

VN

C2I

N +

CC

–

VC

C +

TLE2082D, JG, OR P PACKAGE

(TOP VIEW)


3 2 1 20 19

9 10 11 12 13

4

5

6

7

8

18

17

16

15

14

4IN+NCVCC–NC3IN+

1IN+NC

VCC+NC

2IN+


1IN

–1O

UT

NC

3IN

–4I

N –

2 IN

–

NC

3OU

T

2OU

T

4OU

T

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

1OUT1IN–1IN+

VCC+2IN+2IN–

2OUTNC

4OUT4IN–4IN+VCC–3IN+3IN–3OUTNC

1

2

3

4

5

6

7

14

13

12

11

10

9

8

1OUT1IN–1IN+

VCC+2IN+2IN–

2OUT

4OUT4IN–4IN+VCC–3IN+3IN–3OUT

TLE2084J OR N PACKAGE

(TOP VIEW)

TLE2084DW PACKAGE

(TOP VIEW)

NC – No internal connection

symbol

+

–OUT

IN+

IN–



TLE2081Y chip information

This chip, when properly assembled, displays characteristics similar to the TLE2081. Thermal compression orultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductiveepoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 TYPICAL

BONDING PADS: 4 × 4 MINIMUM

TJmax = 150°C

TOLERANCES ARE ±10%.

ALL DIMENSIONS ARE IN MILS.

PIN (4) IS INTERNALLY CONNECTEDTO BACKSIDE OF THE CHIP.

+

–OUT

IN+

IN–

VCC+

(6)(3)

(2)

(5)

(1)

(7)

(4)

OFFSET N1

OFFSET N2VCC–

58

85

(1)

(2)

(4) (5)(6)

(7)

(8)

(3)









TJmax = 150°C




+

–1OUT

1IN+

1IN–

VCC+

(4)

(6)

(3)

(2)

(5)

(1)

(7)

(8)

–

+

2OUT2IN+

2IN–

VCC–

80

90

(1)

(2)

(3)(4)

(5)

(6)

(7)(8)








TJmax = 150°C




+

–1OUT

1IN+

1IN–

VCC+

(11)

(6)

(3)

(2)

(5)

(1)

(7)

(4)

–

+

2OUT2IN+

2IN–

VCC–

+

–3OUT

3IN+

3IN–

(13)

(10)

(9)

(12)

(8)

(14)

–

+

4OUT4IN+

4IN–

(2) (1) (14)

(4)

(5)

(6) (7) (8) (9)

(10)

(11)

(12)

(13)

100

150

(3)

TLE208x, TLE208xA, TLE208xYEXCALIBUR HIG

H-SPEED JFET-INPUTO

PERATIONAL AM

PLIFIERSS

LOS

182B – F

EB

RU

AR

Y 1997 – R

EV

ISE

D JU

NE

2001

PO

ST

OF

FIC

E B

OX

655303 DA

LLAS

, TE

XA

S 75265

•7

equivalent schematic (each channel)

Q1

IN–

IN+

Q2 D1

Q7

Q5

Q6

Q9

Q10

C2

R4

Q14

Q4

Q3

R1

Q8

R2

Q11

R3

C1

Q12

D2

Q13

Q15

Q16

Q19

Q20

Q17

R6

VCC–

VCC+

R8

C3Q18

R7

R5 C4

Q21

C5

R9 R10

Q22 Q26 Q27

Q31 R14

Q29

C6Q25

Q30

R11

Q23

Q28

Q24D3

OUTR13

R12

OFFSET N1(see Note A)

OFFSET N2(see Note A)

NOTE A: OFFSET N1 and OFFSET N2 are only availiable on the TLE2081x devices.

ACTUAL DEVICE COMPONENT COUNT

COMPONENT TLE2081 TLE2082 TLE2084

Transistors 33 57 114

Resistors 25 37 74

Diodes 8 5 10

Capacitors 6 11 22



absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†

Supply voltage, VCC+ (see Note 1) 19 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Supply voltage, VCC– (see Note 1) –19 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Differential input voltage range, VID (see Note 2) VCC+ to VCC–. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input voltage range, VI (any input) VCC+ to VCC–. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input current, II (each input) ±1 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Output current, IO (each output) ±80 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current into VCC+ 160 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Total current out of VCC– 160 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Duration of short-circuit current at (or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating free-air temperature range, TA: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

I suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . M suffix –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Case temperature for 60 seconds: FK package 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: DW or N package 260°C. . . . . . . . . . . . . . . Lead temperature 1,6 mm (1/16 inch) from case for 60 seconds: J package 300°C. . . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, andfunctional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is notimplied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC– .2. Differential voltages are at IN+ with respect to IN–.3. The output can be shorted to either supply. Temperatures and/or supply voltages must be limited to ensure that the maximum

dissipation rate is not exceeded.

DISSIPATION RATING TABLE

PACKAGETA ≤ 25°C

POWER RATINGDERATING FACTORABOVE TA = 25°C

TA = 70°CPOWER RATING



D 725 mW 5.8 mW/°C 464 mW 377 mW 145 mW

DW 1025 mW 8.2 mW/°C 656 mW 533 mW 205 mW

FK 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW

J 1375 mW 11.0 mW/°C 880 mW 715 mW 275 mW

JG 1050 mW 8.4 mW/°C 672 mW 546 mW 210 mW

N 1150 mW 9.2 mW/°C 736 mW 598 mW 230 mW

P 1000 mW 8.0 mW/°C 640 mW 344 mW 200 mW

recommended operating conditions

C SUFFIX I SUFFIX M SUFFIXUNIT

MIN MAX MIN MAX MIN MAXUNIT

Supply voltage, VCC± ±2.25 ±19 ±2.25 ±19 ±2.25 ±19 V

Common mode input voltage VICVCC± = ±5 V –0.9 5 –0.8 5 –0.8 5

VCommon-mode input voltage, VICVCC± = ±15 V –10.9 15 –10.8 15 –10.8 15

V

Operating free-air temperature, TA 0 70 –40 85 –55 125 °C




TLE2081C electrical characteristics at specified free-air temperature, VCC± = ±5 V (unlessotherwise noted)

PARAMETER TEST CONDITIONS T †TLE2081C TLE2081AC

UNITPARAMETER TEST CONDITIONS TA†MIN TYP MAX MIN TYP MAX

UNIT

VIO Input offset voltage25°C 0.34 6 0.3 3

mVVIO Input offset voltageVIC = 0, VO = 0, Full range 8 5

mV

αVIOTemperature coefficientof input offset voltage

RS = 50 ΩFull range 3.2 29 3.2 29 µV/°C

IIO Input offset current25°C 5 100 5 100

nAIIO Input offset currentVIC = 0, VO = 0, Full range 1.4 1.4

nA

IIB Input bias current

IC , O ,See Figure 4 25°C 15 175 15 175

nAIIB Input bias currentFull range 5 5

nA

5 5 5 525°C

5to

5to

5to

5to

VICRCommon-mode input

RS = 50 Ω–1 –1.9 –1 –1.9

VVICR voltage rangeRS = 50 Ω

5 5V

Full range5to

5tog

–0.9 –0.9

IO = 200 µA25°C 3.8 4.1 3.8 4.1

IO = –200 µAFull range 3.7 3.7

VOMMaximum positive peak

IO = 2 mA25°C 3.5 3.9 3.5 3.9

VVOM+ output voltage swingIO = –2 mA

Full range 3.4 3.4V

IO = 20 mA25°C 1.5 2.3 1.5 2.3

IO = –20 mAFull range 1.5 1.5

IO = 200 µA25°C –3.5 –4.2 –3.5 –4.2

IO = 200 µAFull range –3.4 –3.4

VOMMaximum negative peak

IO = 2 mA25°C –3.7 –4.1 –3.7 –4.1

VVOM–g

output voltage swingIO = 2 mA

Full range –3.6 –3.6V

IO = 20 mA25°C –1.5 –2.4 –1.5 –2.4

IO = 20 mAFull range –1.5 –1.5

RL = 600 Ω25°C 80 91 80 91

RL = 600 ΩFull range 79 79

AVDLarge-signal differential

VO = ± 2 3 V RL = 2 kΩ25°C 90 100 90 100

dBAVDg g

voltage amplificationVO = ± 2.3 V RL = 2 kΩ

Full range 89 89dB

RL = 10 kΩ25°C 95 106 95 106

RL = 10 kΩFull range 94 94

ri Input resistance VIC = 0 25°C 1012 1012 Ω

ci Input capacitanceVIC = 0, Common mode 25°C 11 11

pFci Input capacitance IC ,See Figure 5 Differential 25°C 2.5 2.5

pF

zoOpen-loop output impedance

f = 1 MHz 25°C 80 80 Ω

CMRRCommon-mode VIC = VICRmin, 25°C 70 89 70 89

dBCMRRrejection ratio

IC ICR ,VO = 0, RS = 50 Ω Full range 68 68

dB

kSVRSupply-voltage rejection VCC± = ±5 V to ±15 V, 25°C 82 99 82 99

dBkSVRy g j

ratio(∆VCC± /∆VIO)CC±

VO = 0, RS = 50 Ω Full range 80 80dB

† Full range is 0°C to 70°C.



TLE2081C electrical characteristics at specified free-air temperature, VCC± = ±5 V (unlessotherwise noted) (continued)



UNIT

ICC Supply current VO = 0 No load25°C 1.35 1.6 2.2 1.35 1.6 2.2

mAICC Supply current VO = 0, No loadFull range 2.2 2.2

mA

IOSShort-circuit output

VO = 0VID = 1 V

25°C–35 –35

mAIOS currentVO = 0

VID = –1 V25°C

45 45mA


TLE2081C operating characteristics at specified free-air temperature, VCC± = ±5 V



UNIT

25°C 35 35

SR+ Positive slew rateVO(PP) = ±2.3 V,AVD 1 RL 2 kΩ

Fullrange

23 23V/µs

AVD = –1, RL = 2 kΩ,CL = 100 pF, See Figure 1 25°C 38 38

SR– Negative slew rateCL = 100 F, See Figure 1

Fullrange

23 23V/µs

t Settling time

AVD = –1,2-V step,

To 10 mV25°C

0.25 0.25µsts Settling time ,

RL = 1 kΩ,CL = 100 pF To 1 mV

25°C0.4 0.4

µs

VEquivalent input noise f = 10 Hz

25°C28 28

nV/√HzVnq

voltage f = 10 kHz25°C

11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6

VN(PP)Peak-to-peak equivalent See Figure 3 10 kHz

25°C6 6

µVVN(PP)q

input noise voltage f = 0.1 Hz to10 Hz

25°C0.6 0.6

µV

InEquivalent input noise current

VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA/√Hz

THD + NTotal harmonic distortion

VO(PP) = 5 V, AVD = 10,f 1 kHz RL 2 kΩ 25°C 0 013% 0 013%THD + N

plus noise f = 1 kHz, RL = 2 kΩ,RS = 25 Ω

25°C 0.013% 0.013%

B1 Unity gain bandwidthVI = 10 mV, RL = 2 kΩ,

25°C 9 4 9 4 MHzB1 Unity-gain bandwidth I , L ,CL = 25 pF, See Figure 2

25°C 9.4 9.4 MHz

BOMMaximum output-swing VO(PP) = 4 V, AVD = –1,

25°C 2 8 2 8 MHzBOMg

bandwidthO(PP) , VD ,

RL = 2 kΩ , CL = 25 pF25°C 2.8 2.8 MHz

φ Phase margin at unity gainVI = 10 mV, RL = 2 kΩ,

25°C 56° 56°φm Phase margin at unity gain I , L ,CL = 25 pF, See Figure 2

25°C 56° 56°








UNIT


mVVIO Input offset voltageVIC = 0, VO = 0, Full range 8 5

mV



IIO Input offset current25°C 6 100 6 100

nAIIO Input offset currentVIC = 0, VO = 0, Full range 1.4 1.4

nA


IC , O ,See Figure 4 25°C 20 175 20 175

nAIIB Input bias currentFull range 5 5

nA

15 15 15 1525°C

15to

15to

15to

15to


RS = 50 Ω–11 –11.9 –11 –11.9


15 15V

Full range15to

15tog

–10.9 –10.9

IO = 200 µA25°C 13.8 14.1 13.8 14.1



IO = 2 mA25°C 13.5 13.9 13.5 13.9


Full range 13.4 13.4V

IO = 20 mA25°C 11.5 12.3 11.5 12.3


IO = 200 µA25°C –13.8 –14.2 –13.8 –14.2

IO = 200 µAFull range –13.7 –13.7


IO = 2 mA25°C –13.5 –14 –13.5 –14

VVOM–g



IO = 20 mA25°C –11.5 –12.4 –11.5 –12.4


RL = 600 Ω25°C 80 96 80 96



VO = ± 10 V RL = 2 kΩ25°C 90 109 90 109

dBAVDg g

voltage amplificationVO = ± 10 V RL = 2 kΩ

Full range 89 89dB

RL = 10 kΩ25°C 95 118 95 118



ci Input capacitanceVIC = 0,See Figure 5

Commonmode

25°C 7.5 7.5pFi See Figure 5

Differential 25°C 2.5 2.5


f = 1 MHz 25°C 80 80 Ω




dB


dBkSVRy g j

ratio (∆VCC± /∆VIO)CC±








UNIT



mA

IShort-circuit output

V 0VID = 1 V

25°C–30 –45 –30 –45

mAIOS current VO = 0VID = –1 V

25°C30 48 30 48

mA





UNIT

25°C 30 40 30 40

SR+ Positive slew rateVO(PP) = 10 V, AVD = –1,RL 2 kΩ CL 100 pF

Fullrange

27 27V/µs

RL = 2 kΩ, CL = 100 pF,See Figure 1 25°C 30 45 30 45

SR– Negative slew rateSee Figure 1

Fullrange

27 27V/µs

t Settling time


To 10 mV25°C


RL = 1kΩ,CL = 100 pF To 1 mV

25°C1.5 1.5

µs


25°C28 28

nV√HzVnq


11.6 11.6nV√Hz

RS = 20 Ω, f = 10 Hz to6 6

VN(PP)

Peak-to-peakequivalent input noise

SSee Figure 3 10 kHz

25°C6 6

µVVN(PP) equivalent input noisevoltage f = 0.1 Hz to

10 Hz

25°C0.6 0.6

µV

IEquivalent input noise

VIC = 0 f = 10 kHz 25°C 2 8 2 8 fA /√HzInq

currentVIC = 0, f = 10 kHz 25°C 2.8 2.8 fA /√Hz

THD + NTotal harmonic


distortion plus noise f = 1 kHz, RL = 2 kΩ, RS = 25 Ω

25°C 0.008% 0.008%



25°C 8 10 8 10 MHz

BOMMaximum output- VO(PP) = 20 V, AVD = –1,

25°C 478 637 478 637 kHzBOM swing bandwidthO(PP) , VD ,

RL = 2 kΩ, CL = 25 pF25°C 478 637 478 637 kHz

φPhase margin at unity VI = 10 mV, RL = 2 kΩ,

25°C 57° 57°φmg y

gainI L

CL = 25 pF, See Figure 2 25°C 57° 57°





TLE2081I electrical characteristics at specified free-air temperature, VCC± = ±5 V (unless otherwisenoted)

PARAMETER TEST CONDITIONS T †TLE2081I TLE2081AI


UNIT


mVVIO Input offset voltageVIC = 0, VO = 0, Full range 7.6 5.6

mV


RS = 50 Ω,Full range 3.2 29 3.2 29 µV/°C

IIO Input offset current25°C 5 100 5 100 pA

IIO Input offset currentVIC = 0, VO = 0, Full range 5 5 nA


IC , O ,See Figure 4 25°C 15 175 15 175 pA

IIB Input bias currentFull range 10 10 nA

5 5 5 525°C

5to

5to

5to

5to


RS = 50 Ω–1 –1.9 –1 –1.9


5 5V

Full range5to

5tog

–0.8 –0.8

IO = 200 µA25°C 3.8 4.1 3.8 4.1



IO = 2 mA25°C 3.5 3.9 3.5 3.9


Full range 3.4 3.4V

IO = 20 mA25°C 1.5 2.3 1.5 2.3


IO = 200 µA25°C –3.8 –4.2 –3.8 –4.2



IO = 2 mA25°C –3.5 –4.1 –3.5 –4.1

VVOM–g



IO = 20 mA25°C –1.5 –2.4 –1.5 –2.4


RL = 600 Ω25°C 80 91 80 91



VO = ± 2 3 V RL = 2 kΩ25°C 90 100 90 100

dBAVDg g


Full range 89 89dB

RL = 10 kΩ25°C 95 106 95 106




Commonmode

25°C 11 11pFi See Figure 5



f = 1 MHz 25°C 80 80 Ω




dB


dBkSVRy g j

ratio (∆VCC± /∆VIO)CC± ,


† Full range is –40°C to 85°C.



TLE2081I electrical characteristics at specified free-air temperature, VCC± = ±5 V (unless otherwisenoted) (continued)



UNIT



mA


VO = 0VID = 1 V

25°C–35 –35

mAIOS currentVO = 0

VID = –1 V25°C

45 45mA


TLE2081I operating characteristics at specified free-air temperature, VCC± = ±5 V



UNIT

25°C 35 35


Fullrange

22 22V/µs



Fullrange

22 22V/µs

t Settling time


To 10 mV25°C



25°C0.4 0.4

µs


25°C28 28

nV/√HzVnq


11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6

VN(PP)Peak-to-peak equivalent


25°C6 6

µVVN(PP)q

input noise voltage f = 0.1 Hz to25°C

0 6 0 6

µV

10 Hz0.6 0.6

InEquivalent input noisecurrent

VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA/√Hz



plus noisef = 1 kHz, RL = 2 kΩ,RS = 25 Ω

25°C 0.013% 0.013%



25°C 9.4 9.4 MHz




RL = 2 kΩ , CL = 25 pF25°C 2.8 2.8 MHz

φ Phase margin at unity gainVI = 10 mV, RL = 2 kΩ,

25°C 56° 56°φm Phase margin at unity gain I , L ,CL = 25 pF, See Figure 2

25°C 56° 56°





TLE2081I electrical characteristics at specified free-air temperature, VCC± = ±15 V (unlessotherwise noted)



UNIT



mV


RS = 50 Ω,Full range 3.2 29 3.2 29 µV/°C






15 15 15 1525°C

15to

15to

15to

15to


RS = 50 Ω–11 –11.9 –11 –11.9


15 15V

Full range15to

15tog

–10.8 –10.8

IO = 200 µA25°C 13.8 14.1 13.8 14.1



IO = 2 mA25°C 13.5 13.9 13.5 13.9



IO = 20 mA25°C 11.5 12.3 11.5 12.3


IO = 200 µA25°C –13.8 –14.2 –13.8 –14.2

IO = 200 µAFull range –13.7 –13.7


IO = 2 mA25°C –13.5 –14 –13.5 –14

VVOM–g



IO = 20 mA25°C –11.5 –12.4 –11.5 –12.4


RL = 600 Ω25°C 80 96 80 96



VO = ± 10 V RL = 2 kΩ25°C 90 109 90 109

dBAVDg g


Full range 89 89dB

RL = 10 kΩ25°C 95 118 95 118




Commonmode




f = 1 MHz 25°C 80 80 Ω

CMRRCommon-mode

VIC = VICRmin,VO 0

25°C 80 98 80 98dBCMRR

rejection ratioVO = 0,RS = 50 Ω Full range 79 79

dB


dBkSVRy g j






TLE2081I electrical characteristics at specified free-air temperature, VCC± = ±15 V (unlessotherwise noted) (continued)



UNIT



mA


V 0VID = 1 V

25°C–30 –45 –30 –45


25°C30 48 30 48

mA



PARAMETER TEST CONDITIONS TA†TLE2081I TLE2081AI


UNIT

25°C 30 40 30 40SR+ Positive slew rate

VO(PP) = ±10 V,AVD = –1 RL = 2 kΩ

Fullrange

24 24V/µs

AVD = –1, RL = 2 kΩ,CL = 100 pF, See Figure 1 25°C 30 45 30 45


Fullrange

24 24V/µs

t Settling time


To 10 mV25°C

0.4 0.4µsts Settling time RL = 1kΩ,

CL = 100 pF To 1 mV25°C

1.5 1.5µs


25°C28 28

nV/√HzVnq


11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6


25°C6 6

µVVN(PP) input noise voltage f = 0.1 Hz to10 Hz

25°C0.6 0.6

µV


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA/√Hz


VO(PP) = 20 V, AVD = 10,f 1 kHz RL 2 kΩ 25°C 0 008% 0 008%THD + N plus noise f = 1 kHz, RL = 2 kΩ,RS = 25 Ω

25°C 0.008% 0.008%


25°C 8 10 8 10 MHzB1 Unity-gain bandwidth I LCL = 25 pF, See Figure 2 25°C 8 10 8 10 MHz


25°C 478 637 478 637 kHzBOMg

bandwidthO(PP) VD

RL = 2 kΩ, CL = 25 pF 25°C 478 637 478 637 kHz

φm Phase margin at unity gainVI = 10 mV, RL = 2 kΩ,

25°C 57° 57°φm Phase margin at unity gain I LCL = 25 pF, See Figure 2

25°C 57° 57°





TLE2081M electrical characteristics at specified free-air temperature, VCC± = ±5 V (unlessotherwise noted)

PARAMETER TEST CONDITIONS T †TLE2081M TLE2081AM


UNIT



mV

αVIOTemperature coefficient ofinput offset voltage

RS = 50ΩFull range 3.2 29∗ 3.2 29∗ µV/°C






5 5 5 525°C

5to

5to

5to

5to


RS = 50 Ω–1 –1.9 –1 –1.9


5 5V

Full range5to

5tog

–0.8 –0.8

IO = 200 µA25°C 3.8 4.1 3.8 4.1



IO = 2 mA25°C 3.5 3.9 3.5 3.9


Full range 3.3 3.3V

IO = 20 mA25°C 1.5 2.3 1.5 2.3


IO = 200 µA25°C –3.8 –4.2 –3.8 –4.2



IO = 2 mA25°C –3.5 –4.1 –3.5 –4.1

VVOM–g



IO = 20 mA25°C –1.5 –2.4 –1.5 –2.4


RL = 600 Ω25°C 80 91 80 91



VO = ± 2 3 V RL = 2 kΩ25°C 90 100 90 100

dBAVDg g


Full range 88 88dB

RL = 10 kΩ25°C 95 106 95 106




Commonmode

25°C 11 11pFi See Figure 5



f = 1 MHz 25°C 80 80 Ω




dB


dBkSVRy g j



∗ On products compliant with MIL-PRF-38535, Class B, this parameter is not production tested.† Full range is –55°C to 125°C.



TLE2081M electrical characteristics at specified free-air temperature, VCC± = ±5 V (unlessotherwise noted) (continued)



UNIT



mA


VO = 0VID = 1 V

25°C–35 –35

mAIOS currentVO = 0

VID = –1 V25°C

45 45mA


TLE2081M operating characteristics at specified free-air temperature, VCC± = ±5 V



UNIT

25°C 35 35


Fullrange

20∗ 20∗ V/µs



Fullrange

20∗ 20∗ V/µs

t Settling time


To 10 mV25°C



25°C0.4 0.4

µs


25°C28 28

nV/√HzVnq


11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6

VN(PP)

Peak-to-peak equivalent input noise


25°C6 6


25°C0 6 0 6

µVvoltage

10 Hz0.6 0.6


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA /√Hz



distortion plus noise f = 1 kHz, RL = 2 kΩ, RS = 25 Ω

25°C 0.013% 0.013%



25°C 9.4 9.4 MHz




RL = 2 kΩ , CL = 25 pF25°C 2.8 2.8 MHz


25°C 56° 56°φmg y

gainI L

CL = 25 pF, See Figure 2 25°C 56° 56°








UNIT



mV


RS = 50 ΩFull range 3.2 29∗ 3.2 29∗ µV/°C






15 15 15 1525°C

15to

15to

15to

15to


RS = 50 Ω–11 –11.9 –11 –11.9


15 15V

Full range15to

15tog

–10.8 –10.8

IO = 200 µA25°C 13.8 14.1 13.8 14.1



IO = 2 mA25°C 13.5 13.9 13.5 13.9



IO = 20 mA25°C 11.5 12.3 11.5 12.3


IO = 200 µA25°C –13.8 –14.2 –13.8 –14.2

IO = 200 µAFull range –13.6 –13.6


IO = 2 mA25°C –13.5 –14 –13.5 –14

VVOM–g



IO = 20 mA25°C –11.5 –12.4 –11.5 –12.4


RL = 600 Ω25°C 80 96 80 96



VO = ± 10 V RL = 2 kΩ25°C 90 109 90 109

dBAVDg g


Full range 88 88dB

RL = 10 kΩ25°C 95 118 95 118




Commonmode



zoOpen-loop outputimpedance

f = 1 MHz 25°C 80 80 Ω




dB


dBkSVRy g j






TLE2081M electrical characteristics at specified free-air temperature, VCC± = ±15 V (unlessotherwise noted)(continued)



UNIT



mA


V 0VID = 1 V

25°C–30 –45 –30 –45


25°C30 48 30 48

mA





UNIT

25°C 30 40 30 40

SR+ Positive slew rateVO(PP) = 10 V,AVD 1 RL 2 kΩ

Fullrange

22 22V/µs



Fullrange

22 22V/µs

t Settling time


To 10 mV25°C



25°C1.5 1.5

µs


25°C28 28

nV/√HzVnq


11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6

VN(PP)

Peak-to-peak equivalent input noise


25°C6 6


25°C0 6 0 6

µVvoltage

10 Hz0.6 0.6


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA/√Hz



plus noise f = 1 kHz, RL = 2 kΩ, RS = 25 Ω

25°C 0.008% 0.008%


25°C 8∗ 10 8∗ 10 MHzB1 Unity-gain bandwidth I , L ,CL = 25 pF, See Figure 2

25°C 8∗ 10 8∗ 10 MHz


25°C 478∗ 637 478∗ 637 kHzBOMg


RL = 2 kΩ, CL = 25 pF25°C 478∗ 637 478∗ 637 kHz


25°C 57° 57°φmg y

gainI L

CL = 25 pF, See Figure 2 25°C 57° 57°





TLE2081Y electrical characteristics at VCC± = ±15 V, TA = 25°C

PARAMETER TEST CONDITIONSTLE2081Y

UNITPARAMETER TEST CONDITIONSMIN TYP MAX

UNIT

VIO Input offset voltage VIC = 0, VO = 0, RS = 50 Ω 0.49 6 mV

IIO Input offset currentVIC = 0 VO = 0 See Figure 4

6 100pA

IIB Input bias currentVIC = 0, VO = 0, See Figure 4

20 175pA

15 15VICR Common-mode input voltage range RS = 50 Ω

15to

15to VICR g g S

–11 11.9

M i iti kIO = –200 µA 13.8 14.1

VOM+Maximum positive peakoutput voltage swing

IO = –2 mA 13.5 13.9 Vout ut voltage swing

IO = –20 mA 11.5 12.3

M i ti k t tIO = 200 µA –13.8 –14.2

VOM–Maximum negative peak outputvoltage swing

IO = 2 mA –13.5 –14 Vvoltage swing

IO = 20 mA –11.5 –12.4

L i l diff ti l ltRL = 600 Ω 80 96

AVDLarge-signal differential voltageamplification

VO = ± 10 V RL = 2 kΩ 90 109 dBam lification

RL = 10 kΩ 95 118

ri Input resistance VIC = 0 1012 Ω

ci Input capacitance VIC = 0 See Figure 5Common mode 7.5

pFci Input capacitance VIC = 0, See Figure 5Differential 2.5

pF

zo Open-loop output impedance f = 1 MHz 80 Ω

CMRR Common-mode rejection ratio VIC = VICRmin, VO = 0, RS = 50 Ω 80 98 dB

kSVRSupply-voltage rejection ratio(∆VCC± /∆VIO)

VCC±= ±5 V to ±15 V, VO = 0, RS = 50 Ω 82 99 dB

ICC Supply current VO = 0, No load 1.35 1.7 2.2 mA

I Short circuit output current V 0VID = 1 V –30 –45

mAIOS Short-circuit output current VO = 0VID = –1 V 30 48

mA






UNIT



mV




IIO Input offset currentVIC = 0, VO = 0, Full range 1.4 1.4 nA




5 5 5 525°C to to to to


RS = 50 Ω–1 –1.9 –1 –1.9


5 5V

Full range to tog–0.9 –0.9

IO = 200 µA25°C 3.8 4.1 3.8 4.1



IO = 2 mA25°C 3.5 3.9 3.5 3.9


Full range 3.4 3.4V

IO = 20 mA25°C 1.5 2.3 1.5 2.3


IO = 200 µA25°C –3.8 –4.2 –3.8 –4.2



IO = 2 mA25°C –3.5 –4.1 –3.5 –4.1

VVOM–g



IO = 20 mA25°C –1.5 –2.4 –1.5 –2.4


RL = 600 Ω25°C 80 91 80 91



VO = ± 2 3 V RL = 2 kΩ25°C 90 100 90 100

dBAVDg g


Full range 89 89dB

RL = 10 kΩ25°C 95 106 95 106



ciInput Common mode

VIC = 0 See Figure 525°C 11 11

pFciIn utcapacitance Differential

VIC = 0, See Figure 525°C 2.5 2.5

pF

zo Open-loop output impedance f = 1 MHz 25°C 80 80 Ω

CMRR Common mode rejection ratioVIC = VICRmin, 25°C 70 89 70 89

dBCMRR Common-mode rejection ratio IC ICR ,VO = 0, RS = 50 Ω Full range 68 68

dB


dBkSVRy g j

ratio(∆VCC± /∆VIO)CC± ,


ICCSupply current

VO = 0 No load25°C 2.7 2.9 3.9 2.7 2.9 3.9

mAICCy

(both channels) VO = 0, No loadFull range 3.9 3.9

mA






PARAMETER TEST CONDITIONS TTLE2082C TLE2082AC

UNITPARAMETER TEST CONDITIONS TA MIN TYP MAX MIN TYP MAXUNIT

Crosstalk attenuation VIC = 0, RL = 2 kΩ 25°C 120 120 dB

IOS Short circuit output current VO = 0VID = 1 V

25°C–35 –35

mAIOS Short-circuit output current VO = 0VID = –1 V

25°C45 45

mA




UNIT

25°C 35 35SR+ Positive slew rate

VO(PP) = ±2.3 V,AVD = 1 RL = 2 kΩ

Fullrange 22 22

V/µs


SR– Negative slew rateCL 100 F, See Figure 1

Fullrange 22 22

V/µs

t Settling time


To 10 mV25°C

0.25 0.25µsts Settling time

,RL = 1 kΩ,CL = 100 pF To 1 mV

25°C0.4 0.4

µs


25°C28 28

nV/√HzVnq


11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6


25°C6 6

µVVN(PP)q

input noise voltage f = 0.1Hz to10 Hz

25°C0.6 0.6

µV


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA/√Hz




25°C 0.013% 0.013%



25°C 9.4 9.4 MHz



bandwidthO(PP) VD

RL = 2 kΩ , CL = 25 pF 25°C 2.8 2.8 MHz


25°C 56° 56°φmg y

gainI L

CL = 25 pF, See Figure 2 25°C 56° 56°







UNIT



mV

αVIOTemperature coefficient of input offset voltage







15 15 15 1525°C to to to to


RS = 50 Ω–11 –11.9 –11 –11.9


15 15V


IO = 200 µA25°C 13.8 14.1 13.8 14.1



IO = 2 mA25°C 13.5 13.9 13.5 13.9



IO = 20 mA25°C 11.5 12.3 11.5 12.3


IO = 200 µA25°C –13.8 –14.2 –13.8 –14.2

IO = 200 µAFull range –13.7 –13.7


IO = 2 mA25°C –13.5 –14 –13.5 –14

VVOM–g



IO = 20 mA25°C –11.5 –12.4 –11.5 –12.4


RL = 600 Ω25°C 80 96 80 96



VO = ± 10 V RL = 2 kΩ25°C 90 109 90 109

dBAVDg g


Full range 89 89dB

RL = 10 kΩ25°C 95 118 95 118



ciInputcapacitance

Commonmode VIC = 0,

See Figure 5

25°C 7.5 7.5pFi ca acitance

DifferentialSee Figure 5

25°C 2.5 2.5


f = 1 MHz 25°C 80 80 Ω




dB


dBkSVRy g j








PARAMETER TEST CONDITIONS TTLE2082C TLE2082AC


Supply current25°C 2.7 3.1 3.9 2.7 3.1 3.9

ICCSupply current (both channels)

VO = 0, No load Fullrange

3.9 3.9mA



25°C–30 –45 –30 –45


25°C30 48 30 48

mA




UNIT


VO(PP) = 10 V, AVD = –1,RL = 2 kΩ CL = 100 pF

Fullrange 25 25

V/µs



Fullrange 25 25

V/µs

t Settling time


To 10 mV25°C


,RL = 1kΩ,CL = 100 pF To 1 mV

25°C1.5 1.5

µs


25°C28 28

nV/√HzVnq


11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6

VPeak-to-peak equivalent

S ,See Figure 3 10 kHz

25°C

6 6

VVN(PP)Peak to eak equivalentinput noise voltage f = 0.1 Hz to

25°C0 6 0 6

µV

10 Hz0.6 0.6


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA/√Hz



plus noisef = 1 kHz, RL = 2 kΩ, RS = 25 Ω

25°C 0.008% 0.008%



25°C 8 10 8 10 MHz


25°C 478 637 478 637 kHzBOMg

bandwidthO(PP) VD

RL = 2 kΩ, CL = 25 pF 25°C 478 637 478 637 kHz

φ Phase margin at VI = 10 mV, RL = 2 kΩ,25°C 57° 57°φm

gunity gain

I , L ,CL = 25 pF, See Figure 2

25°C 57° 57°




TLE2082I electrical characteristics at specified free-air temperature, VCC± = ±5 V (unless otherwisenoted)



UNIT



mV








5 5 5 525°C to to to to


RS = 50 Ω–1 –1.9 –1 –1.9


5 5V


IO = 200 µA25°C 3.8 4.1 3.8 4.1



IO = 2 mA25°C 3.5 3.9 3.5 3.9


Full range 3.4 3.4V

IO = 20 mA25°C 1.5 2.3 1.5 2.3


IO = 200 µA25°C –3.8 –4.2 –3.8 –4.2



IO = 2 mA25°C –3.5 –4.1 –3.5 –4.1

VVOM–g



IO = 20 mA25°C –1.5 –2.4 –1.5 –2.4


RL = 600 Ω25°C 80 91 80 91



VO = ± 2 3 V RL = 2 kΩ25°C 90 100 90 100

dBAVDg g


Full range 89 89dB

RL = 10 kΩ25°C 95 106 95 106



ciInput Common mode VIC = 0, 25°C 11 11

pFciIn utcapacitance Differential

IC ,See Figure 5 25°C 2.5 2.5

pF




dB

kSVRSupply-voltage rejection ratio VCC± = ±5 V to ±15 V, 25°C 82 99 82 99

dBkSVRy g j

(∆VCC± /∆VIO)CC± ,


ICCSupply current

VO = 0 No load25°C 2.7 2.9 3.9 2.7 2.9 3.9

mAICCy

(both channels)VO = 0, No load

Full range 3.9 3.9mA





TLE2082I electrical characteristics at specified free-air temperature, VCC± = ±5 V (unless otherwisenoted) (continued)

PARAMETER TEST CONDITIONS TTLE2082I TLE2082AI




25°C–35 –35


25°C45 45

mA




UNIT


VO(PP) = ±2.3 V,AVD = 1 RL = 2 kΩ

Fullrange 20 20

V/µs



Fullrange 20 20

V/µs

t Settling time


To 10 mV25°C



25°C0.4 0.4

µs


25°C28 28

nV/√HzVnq


11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6



25°C6 6

µVVN(PP)q


0 6 0 6

µV

10 Hz0.6 0.6


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA/√Hz




25°C 0.013% 0.013%



25°C 9.4 9.4 MHz



bandwidthO(PP) VD

RL = 2 kΩ , CL = 25 pF 25°C 2.8 2.8 MHz


25°C 56° 56°φmg y

gainI L

CL = 25 pF, See Figure 2 25°C 56° 56°




TLE2082I electrical characteristics at specified free-air temperature, VCC± = ±15 V (unlessotherwise noted)



UNIT



mV








15 15 15 1525°C to to to to


RS = 50 Ω–11 –11.9 –11 –11.9


15 15V


IO = 200 µA25°C 13.8 14.1 13.8 14.1



IO = 2 mA25°C 13.5 13.9 13.5 13.9



IO = 20 mA25°C 11.5 12.3 11.5 12.3


IO = 200 µA25°C –13.8 –14.2 –13.8 –14.2

IO = 200 µAFull range –13.7 –13.7


IO = 2 mA25°C –13.5 –14 –13.5 –14

VVOM–g



IO = 20 mA25°C –11.5 –12.4 –11.5 –12.4


RL = 600 Ω25°C 80 96 80 96



VO = ± 10 V RL = 2 kΩ25°C 90 109 90 109

dBAVDg g


Full range 89 89dB

RL = 10 kΩ25°C 95 118 95 118



ciInputcapacitance

Commonmode VIC = 0, See Figure 5


DifferentialIC , g

25°C 2.5 2.5


f = 1 MHz 25°C 80 80 Ω




dB


dBkSVRy g j







TLE2082I electrical characteristics at specified free-air temperature, VCC± = ±15 V (unlessotherwise noted) (continued)

PARAMETER TEST CONDITIONS TTLE2082I TLE2082AI


Supply current25°C 2.7 3.1 3.9 2.7 3.1 3.9

ICCSupply current(both channels)


3.9 3.9mA



25°C–30 –45 –30 –45


25°C30 48 30 48

mA




UNIT



Fullrange 22 22

V/µs



Fullrange 22 22

V/µs

t Settling time


To 10 mV25°C



25°C1.5 1.5

µs


25°C28 28

nV/√HzVnq


11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6



25°C6 6

µVVN(PP)q


0 6 0 6

µV

10 Hz0.6 0.6


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA/√Hz




25°C 0.008% 0.008%



25°C 8 10 8 10 MHz


25°C 478 637 478 637 kHzBOMg

bandwidthO(PP) VD

RL = 2 kΩ, CL = 25 pF 25°C 478 637 478 637 kHz


25°C 57° 57°φmg y

gainI L

CL = 25 pF, See Figure 2 25°C 57° 57°







UNIT



mV


RS= 50ΩFull range 2.3 25∗ 2.3 25∗ µV/°C






5 5 5 525°C to to to to


RS = 50 Ω–1 –1.9 –1 –1.9


5 5V


IO = 200 µA25°C 3.8 4.1 3.8 4.1



IO = 2 mA25°C 3.5 3.9 3.5 3.9


Full range 3.3 3.3V

IO = 20 mA25°C 1.5 2.3 1.5 2.3


IO = 200 µA25°C –3.8 –4.2 –3.8 –4.2



IO = 2 mA25°C –3.5 –4.1 –3.5 –4.1

VVOM–g



IO = 20 mA25°C –1.5 –2.4 –1.5 –2.4


RL = 600 Ω25°C 80 91 80 91



VO = ± 2 3 V RL = 2 kΩ25°C 90 100 90 100

dBAVDg g


Full range 88 88dB

RL = 10 kΩ25°C 95 106 95 106



ciInputcapaci

Common modeVIC = 0 See Figure 5

25°C 11 11pFci capaci-

tance DifferentialVIC = 0, See Figure 5

25°C 2.5 2.5pF




dB

kSVRSupply-voltage rejection ratio VCC± = ±5 V to ±15 V, 25°C 82 99 82 99

dBkSVRy g j

(∆VCC± /∆VIO)CC± ,









UNIT

Supply current25°C 2.7 2.9 3.6 2.7 2.9 3.6



3.6 3.6mA



25°C–35 –35


25°C45 45

mA





UNIT


VO(PP) = ±2.3 V,AVD = 1 RL = 2 kΩ

Fullrange 18∗ 18∗ V/µs



Fullrange 18∗ 18∗ V/µs

t Settling time


To 10 mV25°C



25°C0.4 0.4

µs


25°C28 28

nV/√HzVnq


11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6



25°C6 6

µVVN(PP)q


0 6 0 6

µV

10 Hz0.6 0.6


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA/√Hz



distortion plus noisef = 1 kHz, RL = 2 kΩ, RS = 25 Ω

25°C 0.013% 0.013%



25°C 9.4 9.4 MHz



bandwidthO(PP) VD

RL = 2 kΩ , CL = 25 pF 25°C 2.8 2.8 MHz


25°C 56° 56°φmg y

gainI L

CL = 25 pF, See Figure 2 25°C 56° 56°







UNIT



mV


RS= 50 ΩFull range 2.4 25∗ 2.4 25∗ µV/°C






15 15 15 1525°C to to to to


RS = 50 Ω–11 –11.9 –11 –11.9


15 15V


IO = 200 µA25°C 13.8 14.1 13.8 14.1



IO = 2 mA25°C 13.5 13.9 13.5 13.9



IO = 20 mA25°C 11.5 12.3 11.5 12.3


IO = 200 µA25°C –13.8 –14.2 –13.8 –14.2

IO = 200 µAFull range –13.6 –13.6


IO = 2 mA25°C –13.5 –14 –13.5 –14

VVOM–g



IO = 20 mA25°C –11.5 –12.4 –11.5 –12.4


RL = 600 Ω25°C 80 96 80 96



VO = ± 10 V RL = 2 kΩ25°C 90 109 90 109

dBAVDg g


Full range 88 88dB

RL = 10 kΩ25°C 95 118 95 118



ciInputcapacitance

Commonmode VIC = 0, See Figure 5


DifferentialIC , g

25°C 2.5 2.5


f = 1 MHz 25°C 80 80 Ω

CMRRCommon-mode rejection VIC = VICRmin, 25°C 80 98 80 98

dBCMRRj

ratioIC ICR ,



dBkSVRy g j










UNIT

Supply current25°C 2.7 3.1 3.6 2.7 3.1 3.6



3.6 3.6mA



V 0VID = 1 V

25°C–30 –45 –30 –45


25°C30 48 30 48

mA





UNIT



Fullrange 20 20

V/µs



Fullrange 20 20

V/µs

t Settling time


To 10 mV25°C



25°C1.5 1.5

µs


25°C28 28

nV/√HzVnq


11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6



25°C6 6

µVVN(PP)q


0 6 0 6

µV

10 Hz0.6 0.6


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA/√Hz




25°C 0.008% 0.008%



25°C 8∗ 10 8∗ 10 MHz


25°C 478∗ 637 478∗ 637 kHzBOMg

bandwidthO(PP) VD

RL = 2 kΩ, CL = 25 pF 25°C 478∗ 637 478∗ 637 kHz


25°C 57° 57°φmg y

gainI L

CL = 25 pF, See Figure 2 25°C 57° 57°




TLE2082Y electrical characteristics at VCC± = ±15 V, TA = 25°C



UNIT

VIO Input offset voltage VIC = 0, VO = 0, RS = 50 Ω 1.1 6 mV

IIO Input offset currentVIC = 0 VO = 0 See Figure 4

6 100 pA

IIB Input bias currentVIC = 0, VO = 0, See Figure 4

20 175 pA

15 15VICR Common-mode input voltage range RS = 50 Ω to to VICR g g S

–11 11.9

IO = –200 µA 13.8 14.1

VOM+ Maximum positive peak output voltage swing IO = –2 mA 13.5 13.9 V

IO = –20 mA 11.5 12.3

IO = 200 µA –13.8 –14.2

VOM– Maximum negative peak output voltage swing IO = 2 mA –13.5 –14 V

IO = 20 mA –11.5 –12.4

RL = 600 Ω 80 96

AVD Large-signal differential voltage amplification VO = ± 10 V RL = 2 kΩ 90 109 dB

RL = 10 kΩ 95 118


ci Input capacitanceCommon mode

VO = 0 See Figure 57.5

pFci Input capacitanceDifferential

VO = 0, See Figure 52.5

pF


CMRR Common-mode rejection ratio VIC = VICRmin, VO = 0, RS = 50 Ω 80 98 dB

kSVR Supply-voltage rejection ratio (∆VCC± /∆VIO)VCC± = ±5 V to ±15 V, VO = 0,RS = 50 Ω 82 99 dB

ICC Supply current (both channels) VO = 0, No load 2.7 3.1 3.9 mA

IOS Short circuit output current VO = 0VID = 1 V –30 –45


mA







UNIT

VIO Input offset voltage25°C –1.6 7 –0.5 4


mV






IC OSee Figure 4 25°C 20 175 20 175 pA


25°C5to

5to

5to

5to


RS = 50 Ω

25°C to–1

to–1.9

to–1

to–1.9

VVICR voltage range RS = 50 Ω

Full range5to

5to

V

Full range to–0.9

to–0.9

IO = 200 µA25°C 3.8 4.1 3.8 4.1



IO = 2 mA25°C 3.5 3.9 3.5 3.9

VVOM+ output voltage swing IO = –2 mAFull range 3.4 3.4

V

IO = 20 mA25°C 1.5 2.3 1.5 2.3


IO = 200 µA25°C –3.8 –4.2 –3.8 –4.2



IO = 2 mA25°C –3.5 –4.1 –3.5 –4.1

VVOM–g

output voltage swing IO = 2 mAFull range –3.4 –3.4

V

IO = 20 mA25°C –1.5 –2.4 –1.5 –2.4


RL = 600 Ω25°C 80 91 80 91



VO = ± 2 3 V RL = 2 kΩ25°C 90 100 90 100

dBAVDg g

voltage amplification VO = ± 2.3 V RL = 2 kΩFull range 89 89

dB

RL = 10 kΩ25°C 95 106 95 106




pFci Input capacitance ICSee Figure 5 Differential 25°C 2.5 2.5

pF


f = 1 MHz 25°C 80 80 Ω


dBCMRR rejection ratioIC ICR



dBkSVRy g j



ICCSupply current

VO = 0 No load25°C 5.2 6.3 7.5 5.2 6.3 7.5

mAICCy

( four amplifiers ) VO = 0, No loadFull range 7.5 7.5

mA

ax Crosstalk attenuation VIC = 0, RL = 2 kΩ 25°C 120 120 dB† Full range is 0°C to 70°C.






UNIT


V 0VID = 1 V

25°C–35 –35


25°C45 45

mA





UNIT

25°C 35 35

SR+ Positive slew rateVO(PP) = ±2.3 V,AVD = 1 RL = 2 kΩ

Fullrange

22 22V/µs



Fullrange

22 22V/µs

t Settling time


To 10 mV25°C

0.25 0.25µsts Settling time RL = 1 kΩ,

CL = 100 pF To 1 mV25°C

0.4 0.4µs


25°C28 28

nV/√HzVnq


11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6


25°C6 6

µVVN(PP) input noise voltage f = 0.1Hz to 10 Hz

25°C0.6 0.6

µV


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA /√Hz


VO(PP) = 5 V, AVD = 10,f = 1 kHz RL = 2 kΩ 25°C 0 013% 0 013%THD + N plus noisef = 1 kHz, RL = 2 kΩ,RS = 25 Ω

25°C 0.013% 0.013%


25°C 9 4 9 4 MHzB1 Unity-gain bandwidth I LCL = 25 pF, See Figure 2 25°C 9.4 9.4 MHz



bandwidthO(PP) VD

RL = 2 kΩ , CL = 25 pF 25°C 2.8 2.8 MHz

φmPhase margin at unity VI = 10 mV, RL = 2 kΩ,

25°C 56° 56°φmg y

gainI L

CL = 25 pF, See Figure 225°C 56° 56°








UNIT



mV

αVIOTemperature coefficient of input offset voltage







15 15 15 1525°C to to to to


RS = 50 Ω–11 –11.9 –11 –11.9

VVICR voltage range RS = 50 Ω15 15

V


IO = 200 µA25°C 13.8 14.1 13.8 14.1



IO = 2 mA25°C 13.5 13.9 13.5 13.9


V

IO = 20 mA25°C 11.5 12.3 11.5 12.3


IO = 200 µA25°C –13.8 –14.2 –13.8 –14.2

M i ti

IO = 200 µAFull range –13.7 –13.7

VOM

Maximum negativepeak output voltage IO = 2 mA

25°C –13.7 –14 –13.7 –14VVOM– eak out ut voltage

swingIO = 2 mA


swing

IO = 20 mA25°C –11.5 –12.4 –11.5 –12.4


RL = 600 Ω25°C 80 96 80 96



VO = ± 10 V RL = 2 kΩ25°C 90 109 90 109

dBAVDg g

voltage amplification VO = ± 10 V RL = 2 kΩFull range 89 89

dB

RL = 10 kΩ25°C 95 118 95 118



ci Input capacitanceVIC = 0, Common mode 25°C 7.5 7.5


pF


f = 1 MHz 25°C 80 80 Ω





dBkSVRy g j



ICCSupply current

VO = 0 No load25°C 5.2 6.5 7.5 5.2 6.5 7.5

mAICCy


mA

ax Crosstalk attenuation VIC = 0, RL = 2 kΩ 25°C 120 120 dB† Full range is 0°C to 70°C.






UNIT


V 0VID = 1 V

25°C–30 –45 –30 –45


25°C30 48 30 48

mA





UNIT

25°C 25 40 25 40

SR+ Positive slew rateVO(PP) = 10 V, AVD = –1,RL 2 kΩ CL 100 pF

Fullrange

22 22V/µs



Fullrange

25 25V/µs

t Settling time


To 10 mV25°C



25°C1.5 1.5

µs


25°C28 28

nV/√HzVnq


11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6

VPeak-to-peak equivalent

S ,See Figure 3 10 kHz

25°C

6 6

VVN(PP)Peak to eak equivalentinput noise voltage f = 0.1 Hz to

25°C0 6 0 6

µV

10 Hz0.6 0.6


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA /√Hz




25°C 0.008% 0.008%



25°C 8 10 8 10 MHz


25°C 478 637 478 637 kHzBOMg


RL = 2 kΩ, CL = 25 pF25°C 478 637 478 637 kHz

φPhase margin at VI = 10 mV, RL = 2 kΩ,

25°C 57° 57°φmg

unity gainI L

CL = 25 pF, See Figure 2 25°C 57° 57°








UNIT



mV








5 5 5 525°C to to to to


RS = 50 Ω–1 –1.9 –1 –1.9


V


IO = 200 µA25°C 3.8 4.1 3.8 4.1



IO = 2 mA25°C 3.5 3.9 3.5 3.9


V

IO = 20 mA25°C 1.5 2.3 1.5 2.3


IO = 200 µA25°C –3.8 –4.2 –3.8 –4.2

M i ti


VOM

Maximum negativepeak output voltage IO = 2 mA

25°C –3.5 –4.1 –3.5 –4.1VVOM– eak out ut voltage

swingIO = 2 mA


swing

IO = 20 mA25°C –1.5 –2.4 –1.5 –2.4


RL = 600 Ω25°C 80 91 80 91



VO = ± 2 3 V RL = 2 kΩ25°C 90 100 90 100

dBAVDg g

voltage amplification VO = ± 2.3 V RL = 2 kΩFull range 88 88

dB

RL = 10 kΩ25°C 95 106 95 106





pF


f = 1 MHz 25°C 80 80 Ω




kSVRSupply-voltage rejec- VCC± = ±5 V to ±15 V, 25°C 82 99 82 99

dBkSVRy g j

tion ratio (∆VCC± /∆VIO)CC±


ICCSupply current

VO = 0 No load25°C 5.2 6.3 7.5 5.2 6.3 7.5

mAICCy


mA

ax Crosstalk attenuation VIC = 0, RL = 2 kΩ 25°C 120 120 dB∗ On products compliant with MIL-PRF-38535, Class B, this parameter is not production tested.† Full range is –55°C to 125°C.




PARAMETER TEST CONDITIONS TTLE2084M TLE2084AM



V 0VID = 1 V

25°C–35 –35


25°C45 45

mA




UNIT

25°C 35 35


Fullrange

18∗ 18∗ V/µs



Fullrange

18∗ 18∗ V/µs

t Settling time


To 10 mV25°C



25°C0.4 0.4

µs


25°C28 28

nV/√HzVnq


11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6



25°C6 6

µVVN(PP)q


0 6 0 6

µV

10 Hz0.6 0.6


VIC = 0, f = 10 kHz 25°C 2.8 2.8 fA /√Hz




25°C 0.013% 0.013%



25°C 9.4 9.4 MHz




RL = 2 kΩ , CL = 25 pF25°C 2.8 2.8 MHz


25°C 56° 56°φmg y

gainI L

CL = 25 pF, See Figure 2 25°C 56° 56°








UNIT



mV








15 15 15 1525°C to to to to


RS = 50 Ω–11 –11.9 –11 –11.9


V


IO = 200 µA25°C 13.8 14.1 13.8 14.1



IO = 2 mA25°C 13.5 13.9 13.5 13.9


V

IO = 20 mA25°C 11.5 12.3 11.5 12.3


IO = 200 µA25°C –13.8 –14.2 –13.8 –14.2

IO = 200 µAFull range –13.6 –13.6


IO = 2 mA25°C –13.5 –14 –13.5 –14

VVOM–g

output voltage swing IO = 2 mAFull range –13.3 –13.3

V

IO = 20 mA25°C –11.5 –12.4 –11.5 –12.4


RL = 600 Ω25°C 80 96 80 96



VO = ± 10 V RL = 2 kΩ25°C 90 109 90 109

dBAVDg g

voltage amplification VO = ± 10 V RL = 2 kΩFull range 88 88

dB

RL = 10 kΩ25°C 95 118 95 118



ci Input capacitanceVIC = 0, Common mode 25°C 7.5 7.5


pF


f = 1 MHz 25°C 80 80 Ω





dBkSVRy g j



ICCSupply current

VO = 0 No load25°C 5.2 6.5 7.5 5.2 6.5 7.5

mAICCy


mA

ax Crosstalk attenuation VIC = 0, RL = 2 kΩ 25°C 120 120 dB∗ On products compliant with MIL-PRF-38535, Class B, this parameter is not production tested.† Full range is –55°C to 125°C.




PARAMETER TEST CONDITIONS TTLE2084M TLE2084AM



V 0VID = 1 V

25°C–30 –45 –30 –45


25°C30 48 30 48

mA




UNIT

25°C 25 40 25 40

SR+ Positive slew rateVO(PP) = 10 V,AVD 1 RL 2 kΩ

Fullrange

17 17V/µs



Fullrange

20 20V/µs

t Settling time


To 10 mV25°C



25°C1.5 1.5

µs


25°C28 28

nV/√HzVnq


11.6 11.6nV/√Hz

RS = 20 Ω, f = 10 Hz to6 6



25°C6 6

µVVN(PP)q


0 6 0 6

µV

10 Hz0.6 0.6

IEquivalent input noise

VIC = 0 f = 10 kHz 25°C 2 8 2 8 fA /√HzInq

currentVIC = 0, f = 10 kHz 25°C 2.8 2.8 fA /√Hz




25°C 0.008% 0.008%



25°C 8∗ 10 8∗ 10 MHz


25°C 478∗ 637 478∗ 637 kHzBOMg


RL = 2 kΩ, CL = 25 pF25°C 478∗ 637 478∗ 637 kHz

φ Phase margin at unity VI = 10 mV, RL = 2 kΩ,25°C 57° 57°φm

g ygain

I , L ,CL = 25 pF, See Figure 2

25°C 57° 57°





TLE2084Y electrical characteristics at VCC± = ±15 V, TA = 25°C (unless otherwise noted)



UNIT

VIO Input offset voltageVIC = 0, VO = 0,RS = 50 Ω 7 mV

IIO Input offset current VIC = 0, VO = 0, 15 100 pA

IIB Input bias currentIC O

See Figure 4 25 175 pA

15 15VICR Common-mode input voltage range RS = 50 Ω to to VICR g g S

–11 11.9

IO = –200 µA 13.8 14.1

VOM+ Maximum positive peak output voltage swing IO = –2 mA 13.5 13.9 V

IO = –20 mA 11.5 12.3

IO = 200 µA –13.8 –14.2

VOM– Maximum negative peak output voltage swing IO = 2 mA –13.5 –14 V

IO = 20 mA –11.5 –12.4

RL = 600 Ω 80 96

AVD Large-signal differential voltage amplification VO = ± 10 V RL = 2 kΩ 90 109 dB

RL = 10 kΩ 95 118


ci Input capacitanceVIC = 0, Common mode 7.5

pFci Input capacitance ICSee Figure 5 Differential 2.5

pF


CMRR Common-mode rejection ratioVIC = VICRmin, VO = 0,RS = 50 Ω 80 98 dB

kSVR Supply-voltage rejection ratio (∆VCC± /∆VIO)VCC± = ±5 V to ±15 V, VO = 0,RS = 50 Ω 82 99 dB

ICC Supply current ( four amplifiers ) VO = 0, No load 5.2 6.5 7.5 mA

IOS Short circuit output current VO = 0VID = 1 V –30 –45


mA



PARAMETER MEASUREMENT INFORMATION

–+

2 kΩ

2 kΩ

RL CL†

VO

VCC+

VCC+

VI –+

10 kΩ

VO

CL†

100Ω

RL

VCC+

VCC+

VI

† Includes fixture capacitance † Includes fixture capacitance

Figure 1. Slew-Rate Test Circuit Figure 2. Unity-Gain Bandwidthand Phase-Margin Test Circuit

† Includes fixture capacitance

–+

–+

2 kΩ

VCC+ VCC+

VO VO

VCC–VCC–RS RS

Ground Shield

Picoammeters

Figure 3. Noise-Voltage Test Circuit Figure 4. Input-Bias and Offset-Current Test Circuit

–+

VCC+

VO

VCC–

IN–

IN+Cic Cic

Cid

Figure 5. Internal Input Capacitance

typical values

Typical values presented in this data sheet represent the median (50% point) of device parametric performance.

input bias and offset current

At the picoampere bias-current level typical of the TLE208x and TLE208xA, accurate measurement of the biasbecomes difficult. Not only does this measurement require a picoammeter, but test socket leakages can easilyexceed the actual device bias currents. To accurately measure these small currents, Texas Instruments usesa two-step process. The socket leakage is measured using picoammeters with bias voltages applied but withno device in the socket. The device is then inserted in the socket and a second test is performed that measuresboth the socket leakage and the device input bias current. The two measurements are then subtractedalgebraically to determine the bias current of the device.




TYPICAL CHARACTERISTICS

Table of Graphs

FIGURE

VIO Input offset voltage Distribution 6, 7, 8

αVIO Input offset voltage temperature coefficient Distribution 9, 10, 11

IIO Input offset current vs Free-air temperature 12 – 15

IIB Input bias currentvs Free-air temperature 12 – 15

IIB Input bias current vs Supply voltage 16

VICR Common-mode input voltage range vs Free-air temperature 17

VID Differential input voltage vs Output voltage 18, 19

vs Output current 20, 21VOM+ Maximum positive peak output voltage vs Free-air temperature

,24, 25OM+ g

vs Supply voltage 26

vs Output current 22, 23VOM– Maximum negative peak output voltage vs Free-air temperature

,24, 25OM g g

vs Supply voltage 26

VO(PP) Maximum peak-to-peak output voltage vs Frequency 27

VO Output voltage vs Settling time 28

AVD Large signal differential voltage amplificationvs Load resistance 29

AVD Large-signal differential voltage amplification vs Free-air temperature 30, 31

AVD Small-signal differential voltage amplification vs Frequency 32, 33

CMRR Common mode rejection ratiovs Frequency 34

CMRR Common-mode rejection ratioq y

vs Free-air temperature 35

kSVR Supply voltage rejection ratiovs Frequency 36

kSVR Supply-voltage rejection ratioq y

vs Free-air temperature 37

vs Supply voltage 38, 39, 40ICC Supply current

y gvs Free-air temperature

, ,41, 42, 43CC y

vs Differential input voltage 44 – 49

vs Supply voltage 50IOS Short-circuit output current

y gvs Elapsed time 51OSvs Free-air temperature 52

vs Free-air temperature 53, 54SR Slew rate vs Load resistance

,55

vs Differential input voltage 56

Vn Equivalent input noise voltage vs Frequency 57

V Input referred noise voltagevs Noise bandwidth frequency 58

Vn Input-referred noise voltageq y

Over a 10-second time interval 59

Third-octave spectral noise density vs Frequency bands 60

THD +N Total harmonic distortion plus noise vs Frequency 61, 62

B1 Unity-gain bandwidth vs Load capacitance 63

Gain bandwidth productvs Free-air temperature 64

Gain-bandwidth product vs Supply voltage 65

Gain margin vs Load capacitance 66

vs Free-air temperature 67φm Phase margin vs Supply voltage 68m g

vs Load capacitance 69

Phase shift vs Frequency 32, 33




Table of Graphs (Continued)

FIGURE

Noninverting large-signal pulse response vs Time 70

Small-signal pulse response vs Time 71

zo Closed-loop output impedance vs Frequency 72

ax Crosstalk attenuation vs Frequency 73

Figure 6

15

12

6

3

0

27

9

– 4 – 2.4 – 0.8 0.8

Per

cen

tag

e o

f U

nit

s –

% 21

18

24

DISTRIBUTION OF TLE2081INPUT OFFSET VOLTAGE

30

2.4 4

VIO – Input Offset Voltage – mV

VCC = ±15 VTA = 25°CP Package

Figure 7


10

8

4

2

0

18

6

– 4 – 2.4 – 0.8 0.8

Per

cen

tag

e o

f U

nit

s –

% 14

12

16


20

2.4 4

VIO

600 Units Tested From One Wafer LotVCC = ±15 VTA = 25°CP Package

– 1.6– 3.2 0 1.6 3.2





Figure 8


25

20

10

5

0

45

15

– 8 – 4.8 – 1.6 1.6

Per

cen

tag

e o

f U

nit

s –

% 35

30

40


50

4.8 8

VIO

TA = 25°CN Package

VCC± = ±15 V

Figure 9

15

12

6

3

0

27

9

– 40 – 32 – 24 –16 – 8 0 8

Per

cen

tag

e o

f Am

plif

iers

– %

21

18

24

DISTRIBUTION OF TLE2081 INPUT OFFSETVOLTAGE TEMPERATURE COEFFICIENT

30

16 24 32 40

VCC = ±15 VTA = – 55 °C to 125°CP Package

αVIO – Temperature Coefficient – µV/°C

Figure 10

15

12

6

3

0

27

9

– 30 – 24 –18 –12 – 6 0 6

Per

cen

tag

e o

f Am

plif

iers

– %

21

18

24


30

12 18 24 30

310 AmplifiersVCC = ±15 VTA = – 55°C to 125°C


P Package

Figure 11

15

12

6

3

0

27

9

– 40 – 32 – 24 –16 – 8 0 8

Per

cen

tag

e o

f Am

plif

iers

– %

21

18

24


30

16 24 32 40

VCC± = ±15 VTA = – 55°C to 125°CN Package




TYPICAL CHARACTERISTICS†

Figure 12

IIB a

nd

IIO

– In

pu

t B

ias

and

Inp

ut

Off

set

Cu

rren

ts –

nA

0.01

0.00125 45

100

65 85 105 125

0.1

1

10

I IB

I IO

VCC± = ±5 VVIC = 0VO = 0

IIB

IIO

–75 –55 –35 –15 –5

TA – Free-Air Temperature – °C

TLE2081 AND TLE2082INPUT BIAS CURRENT AND INPUT OFFSET CURRENT

vsFREE-AIR TEMPERATURE

Figure 13

IIB a

nd

IIO

– In

pu

t B

ias

and

Off

set

Cu

rren

ts –

nA

0.01

0.00125 45

100

65 85 105 125

0.1

1

10

I IB

I IO

VCC± = ±5 VVIC = 0VO = 0

IIB

IIO

–75 –55 –35 –15 –5


TLE2084INPUT BIAS CURRENT AND INPUT OFFSET CURRENT


Figure 14

25 45 65 85 105 125

0.01

0.001

100

0.1

1

10

VCC± = ±15 VVIC = 0VO = 0

IIO

IIB

–75 –55 –35 –15 5


IIB a

nd

IIO

– In

pu

t B

ias

and

Inp

ut

Off

set

Cu

rren

ts –

nA

I IB

I IO

TLE2081 AND TLE2082INPUT BIAS CURRENT AND INPUT OFFSET CURRENT


Figure 15

IIB a

nd

IIO

– In

pu

t B

ias

and

Off

set

Cu

rren

ts –

nA

I IB

I IO

25 45 65 85 105 125

0.01

0.001

100

0.1

1

10

VCC± = ±15 VVIC = 0VO = 0

IIO

IIB

–75 –55 –35 –15 5


TLE2084INPUT BIAS CURRENT AND INPUT OFFSET CURRENT


† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.





Figure 16

104

103

102

100

101

106

IIB –

Inp

ut

Bia

s C

urr

ent

– p

A

INPUT BIAS CURRENTvs

TOTAL SUPPLY VOLTAGE

0 5 10 15 20 25 30 35 40 45

I IB TA = 25°C

TA = –55°C

105 VICminTA = 125°C

VICmax = VCC+

VCC – Total Supply Voltage (referred to VCC– ) – V

Figure 17

VIC

– C

om

mo

n-M

od

e In

pu

t V

olt

age

Ran

ge

– V

VIC

5 25 45

COMMON-MODE INPUT VOLTAGE RANGEvs

FREE-AIR TEMPERATURE

65 85 105 125

RS = 50 ΩVCC+ +0.5

VCC+ –0.5

VCC– +3.5

VCC+

VCC– +3

VCC– +2.5

VCC– +2

VICmin

VICmax

– 75 –55 –35 –15


Figure 18

VID

– D

iffe

ren

tial

Inp

ut

Vo

ltag

e –

uV

IDV

– 5 – 4 – 3 – 2 – 10 0 1

DIFFERENTIAL INPUT VOLTAGEvs

OUTPUT VOLTAGE

2 5

RL = 2 kΩ

RL = 2 kΩ

RL = 10 kΩ

RL = 10 kΩ

VCC± = ±5 VVIC = 0RS = 50 ΩTA = 25°C

RL = 600 Ω

RL = 600 Ω

– 100

– 200

– 300

– 400

100

200

400

300

0

3 4

VO – Output Voltage – V

Vµ

Figure 19

– 100

– 200

– 300

– 400– 15 – 10 – 5 50

100

200

400

10 15

RL = 2 kΩ

VCC± = ±15 V

RL = 10 kΩ

RL = 10 kΩ

RL = 2 kΩ

RL = 600 Ω

RL = 600 Ω

DIFFERENTIAL INPUT VOLTAGEvs

OUTPUT VOLTAGE

300

0

VO – Output Voltage – V

VID

– D

iffe

ren

tial

Inp

ut

Vo

ltag

e –

uV

IDV

Vµ

VIC = 0RS = 50 ΩTA = 25°C





Figure 20

VO

M –

Max

imu

m P

osi

tive

Pea

k O

utp

ut

Vo

ltag

e –

V

7.5

6

3

1.5

0

13.5

4.5

0 – 5 –10 –15 – 20 – 25 – 30

10.5

9

12

15

– 35 – 40 – 45 – 50

VO

M+

TA = 25°C

TA = 125°C TA = 85°C

IO – Output Current – mA

VCC± = ±15 V

TA = –55°C

TLE2081 AND TLE2082MAXIMUM POSITIVE PEAK OUTPUT VOLTAGE

vsOUTPUT CURRENT

Figure 21

VO

M –

Max

imu

m P

osi

tive

Pea

k O

utp

ut

Vo

ltag

e –

V

6

3

00 – 10 – 20 – 30

9

12

15

– 40 – 50

VO

M+

TA = 25°C

TA = 125°C TA = 85°C


VCC± = ±15 V

TLE2084MAXIMUM POSITIVE PEAK OUTPUT VOLTAGE

vsOUTPUT CURRENT

Figure 22

– M

axim

um

Neg

ativ

e P

eak

Ou

tpu

t V

olt

age

– V

–7.5

– 6

– 3

–1.5

0

–13.5

– 4.5

0 5 10 15 20 25 30

–10.5

– 9

–12

–15

35 40 45 50VO

M –

TA = 25°C

TA = 125°C

TA = –55°C

VCC± = ±15 V

TA = 85°C


TLE2081 AND TLE2082MAXIMUM NEGATIVE PEAK OUTPUT VOLTAGE

vsOUTPUT CURRENT

Figure 23

– M

axim

um

Neg

ativ

e P

eak

Ou

tpu

t V

olt

age

– V

– 6

– 3

00 10 20 30

– 9

–12

–15

40 50VO

M –

TA = 25°C

TA = 125°CTA = –55°C

VCC± = ±15 V

TA = 85°C


TLE2084MAXIMUM NEGATIVE PEAK OUTPUT VOLTAGE

vsOUTPUT CURRENT






Figure 24

VO

M –

Max

imu

m P

eak

Ou

tpu

t V

olt

age

– V

0

– 1

– 3

– 4

– 5

4

– 2

5 25 45

2

1

3

MAXIMUM PEAK OUTPUT VOLTAGEvs


5

65 85 105 125

VO

M

IO = –200 µA

IO = –2 mA

IO = –20 mA

VCC± = ±5 V

IO = 20 mA

IO = 2 mA

IO = 200 µA

–75 –55 –35 –15


Figure 25

12.5

12

11

10.5

10

14.5

11.5

5 25 45

|

|

– M

axim

um

Pea

k O

utp

ut

Vo

ltag

e –

V

13.5

13

14

15

65 85 105 125

VO

M



IO = –20 mA

IO = 20 mA

IO = 2 mA

IO = –200 µAIO = 200 µA

VCC± = ±15 V

–75 –55 –35 –15


IO = –2 mA

Figure 26

VO

M –

Max

imu

m P

eak

Ou

tpu

t V

olt

age

– V

0

– 5

–15

– 20

– 25

20

–10

0 2.5 5 7.5 10 12.5 15

10

5

15


SUPPLY VOLTAGE

25

17.5 20 22.5 25

VO

M

IO = –200 µA

IO = –2 mA

IO = –20 mA

IO = 20 mA

IO = 200 µA

IO = 2 mA

TA = 25°C

|VCC± | – Supply Voltage – V

Figure 27

VO

(PP

) –

Max

imu

m P

eak-

to-P

eak

Ou

tpu

t V

olt

age

– V

20

5

0

30

10

25

100 k 1 M 10 Mf – Frequency – Hz

VO

(PP

)

15

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGEvs

FREQUENCY

TA = –55°C

TA = 25°C, 125°C

TA = 25°C, 125°C

TA = –55°C

VCC± = ±15 V RL = 2 kΩ

VCC± = ±5 V





Figure 28

0 0.5 1 1.5 2

VO

– O

utp

ut

Vo

ltag

e –

V

OUTPUT VOLTAGEvs

SETTLING TIME

V O

VCC± = ±15 VRL = 1 kΩCL = 100 pFAV = –1TA = 25°C

1 mV

1 mV

Rising

Falling

10 mV

10 mV

– 2.5

– 10

– 12.5

10

12.5

– 5

7.5

2.5

– 7.5

5

0

ts – Settling Time – µs

Figure 29

LARGE-SIGNAL DIFFERENTIALVOLTAGE AMPLIFICATION

vsLOAD RESISTANCE

115

110

100

95

90

125

105

0.1 1 10 100

120

VCC± = ±15 V

VIC = 0RS = 50 ΩTA = 25°C

RL – Load Resistance – kΩ

VCC± = ±5 V

AV

D –

Lar

ge-

Sig

nal

Dif

fere

nti

alÁÁÁÁ

AV

D Vo

ltag

e A

mp

lific

atio

n –

dB

Figure 30TA – Free-Air Temperature – °C

95

92

86

83

80

107

89

– 75 – 55 – 35 –15 5 25 45

101

98

104



110

65 85 105 125

RL = 10 kΩ

RL = 2 kΩ

VCC± = ±5 V

RL = 600 Ω

VO = ±2.3 V

AV

D –

Lar

ge-

Sig

nal

Dif

fere

nti

al

ÁÁÁÁ

AV

D Vo

ltag

e A

mp

lific

atio

n –

dB

Figure 31

125105–15– 35– 55

105

101

93

89

85

121

97

113

109

117

125



RL = 10 kΩ

– 75 5 25 45 65 85


RL = 600 Ω

RL = 2 kΩ

VCC± = ±15 VVO = ±10 V

AV

D –

Lar

ge-

Sig

nal

Dif

fere

nti

al

ÁÁÁÁ

AV

D Vo

ltag

e A

mp

lific

atio

n –

dB






60

20

0

– 40

1 10 100 1 k 10 k 100 k

100

120

f – Frequency – Hz

SMALL-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT

vsFREQUENCY

140

1 M 10 M 100 M

80

40

Gain

Phase Shift

– 20

140°

120°

100°

80°

60°

40°

20°

0°

Ph

ase

Sh

ift

180°

160°

VCC± = ±15 VRL = 2 kΩCL = 100 pFTA = 25°C

– S

mal

l-S

ign

al D

iffe

ren

tial

AV

D Vo

ltag

e A

mp

lific

atio

n –

dB

Figure 32

– 10

– 20

30

1 4 10 40 100

f – Frequency – MHz

SMALL-SIGNAL DIFFERENTIAL VOLTAGEAMPLIFICATION AND PHASE SHIFT

vsFREQUENCY

20

10

0

CL = 100 pF

CL = 25 pF

VCC± = ± 15 V

Phase Shift

Gain

80°

120°

100°

140°

160°

180°

Ph

ase

Sh

ift

CL = 100 pF

CL = 25 pF

VIC = 0RC = 2 kΩTA = 25°C

– S

mal

l-S

ign

al D

iffe

ren

tial

AV

D Vo

ltag

e A

mp

lific

atio

n –

dB

Figure 33




Figure 34

10 100 1 k 10 k

CM

RR

– C

om

mo

n-M

od

e R

ejec

tio

n R

atio

– d

B


COMMON-MODE REJECTION RATIOvs

FREQUENCY

100 k 1 M 10 M

VCC± = ±15 V

VCC± = ±5 V

VIC = 0VO = 0RS = 50 ΩTA = 25°C

50

40

20

10

0

90

30

70

60

80

100


85

82

76

73

70

97

79

– 75 – 55 – 35 –15 5 25 45

CM

RR

– C

om

mo

n-M

od

e R

ejec

tio

n R

atio

– d

B

91

88

94

100

65 85 105 125

VO = 0RS = 50 Ω

VCC± = ±5 V

VCC± = ±15 V

COMMON-MODE REJECTION RATIOvs


VIC = VICRmin

Figure 36

XX

XX

– S

up

ply

-Vo

ltag

e R

ejec

tio

n R

atio

– d

Bk

SV

R

SUPPLY-VOLTAGE REJECTION RATIOvs

FREQUENCY

40

20

0

– 2010 100 1 k 10 k 100 k

60

80


100

1 M 10 M

120

kSVR+

kSVR–

∆VCC± = ±5 V to ±15 VVIC = 0VO = 0RS = 50 ΩTA = 25°C


90

84

72

66

60

114

78

– 75 – 55 – 35 –15 5 25 45

102

96

108

120

65 85 105 125

SUPPLY-VOLTAGE REJECTION RATIOvs


kSVR+

kSVR–

XX

XX

– S

up

ply

-Vo

ltag

e R

ejec

tio

n R

atio

– d

Bk

SV

R

∆VCC± = ±5 V to ±15 VVIC = 0VO = 0RS = 50 Ω






Figure 38|VCC±| – Supply Voltage – V

ICC

– S

up

ply

Cu

rren

t –

mA

2

1.6

0.8

0.4

0

3.6

1.2

0 2 4 6 8 10 12

2.8

2.4

3.2

4

14 16 18 20

CC

I

TA = 25°C

TA = –55°C

TA = 125°C

VIC = 0VO = 0No Load

TLE2081SUPPLY CURRENT

vsSUPPLY VOLTAGE


ICC

– S

up

ply

Cu

rren

t –

mA

3

2.8

2.4

2.2

2

3.8

2.6

0 2.5 5 7.5 10 12.5 15

3.4

3.2

3.6

4

17.5 20 22.5 25

CC

I

TA = 25°C

TA = –55°C

TA = 125°C



vsSUPPLY VOLTAGE


ICC

– S

up

ply

Cu

rren

t –

mA

4

2

00 2 4 6 8 10 12

6

8

10

14 16 18 20

CC

I


TA = 25°CTA = –55°C

TA = 125°C


vsSUPPLY VOLTAGE


2

1.6

0.8

0.4

0

3.6

1.2

– 75 – 55 – 35 – 15 5 25 45

ICC

– S

up

ply

Cu

rren

t –

mA

2.8

2.4

3.2

4

65 85 105 125

CC

I


VCC± = ±15 V

VCC± = ±5 V








3

2.9

2.7

2.6

2.5

3.4

2.8

– 75 – 55 – 35 –15 5 25 45

ICC

– S

up

ply

Cu

rren

t –

mA

3.2

3.1

3.3

3.5

65 85 105 125

CC

I


VCC± = ±15 V

VCC± = ±5 V




7

5

6

–75 – 55 – 35 –15 5 25 45

ICC

– S

up

ply

Cu

rren

t –

mA

8

9

10

65 85 105 125

CC

I


VCC± = ±15 V

VCC± = ±5 V



Figure 44VID – Differential Input Voltage – V

ICC

– S

up

ply

Cu

rren

t –

mA

– 0.5 – 0.25 0 0.25 0.50

6

8

10

12

I CC

VCC+ = 5 VVCC– = 0VIC = +4.5 VTA = 25°COpen LoopNo Load

4

2


vsDIFFERENTIAL INPUT VOLTAGE


ICC

– S

up

ply

Cu

rren

t –

mA

– 0.5 – 0.25 0 0.25 0.50

6

8

10

12

14

I CC

VCC+ = 5 VVCC– = 0VIC = 4.5 VTA = 25°COpen LoopNo Load

4

2









ICC

– S

up

ply

Cu

rren

t –

mA

– 0.5 – 0.25 0 0.25 0.50

6

8

10

12

14

I CC

4

2

VCC+ = 5 VVCC– = 0VIC = 4.5 VTA = 25°COpen LoopNo Load

16

18

20




10

5

0–1.5 – 0.9 – 0.3 0 1.5

ICC

– S

up

ply

Cu

rren

t –

mA

15

20

25

I CC

13

8

3

18

23

0.3 0.9

VCC± = ±15 VVIC = 0TA = 25°COpen LoopNo Load




10

5

0–1.5 –1 – 0.5 0 0.5 1 1.5

ICC

– S

up

ply

Cu

rren

t –

mA

15

20

25

I CC

VCC± = ±15 VVIC = 0TA = 25°COpen LoopNo Load




8

4

0–1.5 – 0.3 0 0.9 1.2 1.5

ICC

– S

up

ply

Cu

rren

t –

mA

12

16

20

I CC

VCC± = ±15 V

28

24

32

36

40

0.60.3– 0.6– 0.9–1.2

VIC = 0TA = 25°COpen LoopNo Load






Figure 50

IOS

– S

ho

rt-C

ircu

it O

utp

ut

Cu

rren

t –

mA

0 2.5 5 7.5 10 12.5 15 17.5 20 22.5 25

0

–12

– 36

– 48

– 60

48

– 24

24

12

36

SHORT-CIRCUIT OUTPUT CURRENTvs

SUPPLY VOLTAGE60

I OS

VO = 0TA = 25°C

VID = –1 V

VID = 1 V

|VCC± | – Supply Voltage – V

Figure 51

IOS

– S

ho

rt-C

ircu

it O

utp

ut

Cu

rren

t –

mA

10

–10

– 20

– 500 60 120

30

40

t – Elapsed Time – s

50

180

20

0

I OS


ELAPSED TIME

VCC± = ±15 V

VID = –1 V

VID = 1 V– 30

– 40

VO = 0TA = 25°C


IOS

– S

ho

rt-C

ircu

it O

utp

ut

Cu

rren

t –

mA

0

– 16

– 48

– 64

– 80

64

– 32

– 75 – 55 – 35 –15 5 25 45

32

16

48



80

65 85 105 125

OS

I

VCC± = ±15 V

VCC± = ±15 V

VCC± = ±5 V

VCC± = ±5 V

VID = –1 V

VID = 1 V

VO = 0


SR

– S

lew

Rat

e –

V/x

s

35

33

29

27

25

43

31

– 75 – 55 – 35 –15 5 25 45

39

37

41

SLEW RATEvs

FREE-AIR TEMPERATURE45

65 85 105 125

sµ

V/

VCC± = ± 5 VRL = 2 kΩCL = 100 pF

SR–

SR+







50

46

38

34

30

66

42

– 75 – 55 – 35 –15 5 25 45

SR

– S

lew

Rat

e –

58

54

62

SLEW RATEvs


65 85 105 125

sµ

V/

VCC± = ±15 VRL = 2 kΩCL = 100 pF

SR–

SR+

Figure 55RL – Load Resistance – Ω

10

–10

0

– 20

– 50

50

– 30

100 1 k 10 k 100 k

30

20

40

SLEW RATEvs

LOAD RESISTANCE

VCC± = ±15 VVO± = ±10 V

VCC± = ±5 VVO± = ±2.5 V

Rising Edge

Falling Edge– 40

SR

– S

lew

Rat

e –

sµ

V/

AV = –1CL = 100 pFTA = 25°C


50

0.1 0.4 1 4 10

SLEW RATEvs

DIFFERENTIAL INPUT VOLTAGE

VCC± = ±15 VVO± = ±10 V (10% – 90%)CL = 100 pFTA = 25°C

Rising Edge

Falling Edge

40

30

20

10

0

–10

– 20

– 30

– 40

– 50

SR

– S

lew

Rat

e –

sµ

V/

AV = 1

AV = –1

AV = –1

AV = 1

Figure 57

Vn

– E

qu

ival

ent

Inp

ut

No

ise

Vo

ltag

e – 40

5

25

15

0

50

30

10 100 1 k 10 k

45

10

20


EQUIVALENT INPUT NOISE VOLTAGEvs

FREQUENCY

35

nV

nV

/H

z

VIC = 0RS = 20 ΩTA = 25°C

VCC± = ±15 V





Figure 58

0.011 10 100 1 k 10 k 100 k

Noise Bandwidth Frequency – Hz

1

0.1

10

100

INPUT-REFERRED NOISE VOLTAGEvs

NOISE BANDWIDTH FREQUENCY

VCC± = ±15 VVIC = 0RS = 20 ΩTA = 25°C

Peak-to-Peak

RMS

Vn

– In

pu

t-R

efer

red

No

ise

Vo

ltag

e –

Vn

µV

Figure 59

0.3

0

– 0.3

– 0.60 1 2 3 4 5 6

Vn

– In

pu

t-R

efer

red

No

ise

Vo

ltag

e –

0.6

0.9

t – Time – s

INPUT-REFERRED NOISE VOLTAGEOVER A 10-SECOND TIME INTERVAL

1.2

7 8 9 10

Vn

µV

VCC± = ±15 Vf = 0.1 to 10 HzTA = 25°C

Figure 60

– 90

– 95

–100

–11510 15 20 25 30 35

Th

ird

-Oct

ave

Sp

ectr

al N

ois

e D

ensi

ty –

dB

– 85

– 80

Frequency Bands

THIRD-OCTAVE SPECTRAL NOISE DENSITYvs

FREQUENCY BANDS– 75

40 45

VCC± = ±15 V

Start Frequency: 12.5 HzStop Frequency: 20 kHz

–105

–110

VIC = 0TA = 25°C

Figure 61

0.00110 100 1 k 10 k 100 k

TH

D +

N –

To

tal H

arm

on

ic D

isto

rtio

n +

No

ise

– %

0.01


TOTAL HARMONIC DISTORTION PLUS NOISEvs

FREQUENCY

0.1

1

VCC± = ±5 VVO(PP) = 5 VTA = 25°CFilter: 10-Hz to 500-kHz Band Pass

AV = 100, RL = 600 Ω

AV = 100, RL = 2 kΩ

AV = 10, RL = 2 kΩ

AV = 10, RL = 600 Ω





Figure 62

10 100 1 k 10 k 100 k


0.001TH

D +

N –

To

tal H

arm

on

ic D

isto

rtio

n +

No

ise

– %

TOTAL HARMONIC DISTORTION PLUS NOISEvs

FREQUENCY

0.01

0.1

1Filter: 10-Hz to 500-kHz Band PassVCC± = ±15 VVO(PP) = 20 VTA = 25°C

AV = 100, RL = 600 Ω

AV = 100, RL = 2 kΩ

AV = 10, RL = 600 Ω

AV = 10, RL = 2 kΩ

Figure 63

B1

– U

nit

y-G

ain

Ban

dw

idth

– M

Hz

B1

10

9

8

70 20 40 60

11

12

UNITY-GAIN BANDWIDTHvs

LOAD CAPACITANCE13

80 100

VCC± = ±15 VVIC = 0VO = 0RL = 2 kΩTA = 25°C

CL – Load Capacitance – pF


10

9

8

7– 75 – 55 – 35 – 15 5 25 45

Gai

n-B

and

wid

th P

rod

uct

– M

Hz

11

12

GAIN-BANDWIDTH PRODUCTvs


65 85 105 125

f = 100 kHzVIC = 0VO = 0RL = 2 kΩCL = 100 pF

VCC± = ±15 V

VCC± = ±5 V

Figure 65|VCC + | – Supply Voltage – V

10

9

8

70 5 10 15

Gai

n-B

and

wid

th P

rod

uct

– M

Hz

11

12

13

20 25

CC ±V

f = 100 kHzVIC = 0VO = 0RL = 2 kΩCL = 100 pFTA = 25°C

GAIN-BANDWIDTH PRODUCTvs

SUPPLY VOLTAGE





Figure 66

Gai

n M

arg

in –

dB

6

4

2

00 20 40 60

8

GAIN MARGINvs

LOAD CAPACITANCE10

80 100

VCC± = ±15 VVIC = 0VO = 0RL = 2 kΩTA = 25°C


Figure 67

30°

20°

10°

0°

40°

50°

60°

70°

80°

90°

xm –

Ph

ase

Mar

gin

–75 – 55 – 35 –15 5 25 45

PHASE MARGINvs


65 85 105

mφ

VCC± = ±15 V

VCC± = ±15 V

VCC± = ±5 V

VCC± = ±5 V

125

VIC = 0VO = 0

CL = 25 pF

CL = 100 pF


RL = 2 kΩ

Figure 68

PHASE MARGINvs

SUPPLY VOLTAGE

0 4 8 12 16 20

VIC = 0VO = 0RL = 2 kΩTA = 25°C

0°

10°

90°

80°

30°

20°

40°

50°

60°

70°CL = 25 pF

CL = 100 pF

|VCC±| – Supply Voltage – V

xm –

Ph

ase

Mar

gin

mφ

Figure 69

0°

10°

90°

80°

VIC = 0VO = 0RL = 2 kΩTA = 25°C

VCC± = ±15 V

VCC± = ±5 V

PHASE MARGINvs

LOAD CAPACITANCE

30°

20°

40°

50°

60°

70°

0 20 40 60 80 100


xm –

Ph

ase

Mar

gin

mφ






Figure 70

VO

– O

utp

ut

Vo

ltag

e –

V

0

– 5

– 10

– 150 1

5

10

NONINVERTING LARGE-SIGNALPULSE RESPONSE

15

2 4 5

VO

VCC± = ±15 VAV = 1RL = 2 kΩCL = 100 pF

TA = 25°C, 125°C

TA = 25°C, 125°C

TA = –55°C

3

TA = –55°C

t – Time – µs

Figure 71

0

– 50

–1000 0.4 0.8

VO

– O

utp

ut

Vo

ltag

e –

mV 50

SMALL-SIGNAL PULSE RESPONSE100

1.2 1.6V

O

VCC± = ±15 V

t – Time – µs

AV = –1RL = 2 kΩCL = 100 pFTA = 25°C

Figure 72

CLOSED-LOOP OUTPUT IMPEDANCEvs

FREQUENCY

0.00110 100 1 k 10 k 100 k 1 M 10 M


1

0.1

10

100

AV = 100

AV = 10

AV = 1

VCC± = ±15 V

0.01

TA = 25°C

zo –

Clo

sed

-Lo

op

Ou

tpu

t Im

ped

ance

– X

z oΩ

Figure 73

100

60

40

20

140

80

10 100 1 k 10 k 100 k

ax –

Cro

ssta

lk A

tten

uat

ion

– d

B

120


ax VCC± = ±15 V

VIC = 0RL = 2 kΩTA = 25°C

TLE2082 AND TLE2084CROSSTALK ATTENUATION

vsFREQUENCY




APPLICATION INFORMATION

input characteristics

The TLE208x, TLE208xA, and TLE208xB are specified with a minimum and a maximum input voltage that ifexceeded at either input could cause the device to malfunction. Because of the extremely high input impedanceand resulting low bias current requirements, the TLE208x, TLE208xA, and TLE208xB are well suited forlow-level signal processing; however, leakage currents on printed-circuit boards and sockets can easily exceedbias current requirements and cause degradation in system performance. It is good practice to include guardrings around inputs (see Figure 74). These guards should be driven from a low-impedance source at the samevoltage level as the common-mode input.

VI

R2R1

VI

R4

+

–

VO

R3

VI

+

–

VOVO

+

–

R3R4

R2R1

Where

Figure 74. Use of Guard Rings

TLE2081 input offset voltage nulling

The TLE2061 series offers external null pins that can be used to further reduce the input offset voltage. Thecircuit of Figure 75 can be connected as shown if the feature is desired. When external nulling is not needed,the null pins may be left unconnected.

+

–

VCC–

N2

N1100 kΩ

5 kΩ

IN–

IN+

OUT

Figure 75. Input Offset Voltage Nulling




APPLICATION INFORMATION

macromodel information

Macromodel information provided was derived using PSpice Parts model generation software. The Boylemacromodel (see Note 4) and subcircuit in Figure 58 were generated using the TLE208x typical electrical andoperating characteristics at TA = 25°C. Using this information, output simulations of the following key parameterscan be generated to a tolerance of 20% (in most cases):

Unity-gain frequency

Common-mode rejection ratio

Phase margin

DC output resistance

AC output resistance

Short-circuit output current limit

Maximum positive output voltage swing

Maximum negative output voltage swing

Slew rate

Quiescent power dissipation

Input bias current

Open-loop voltage amplificationNOTE 4: G.R. Boyle, B.M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers”, IEEE Journal

of Solid-State Circuits, SC-9, 353 (1974).

OUT

+

–

+

–

+

–

+

–+

–

+

– +

–

+–

VCC+

RP

IN–2

IN+1

VCC–

RD1

11

J1 J2

10

RSS ISS

3

12

RD2

VE

54DE

DP

VC

DC

C1

53

R2

6

9

EGND

VB

FB

C2

GCM GA VLIM

8

5

RO1

RO2

HLIM

90

DLP

91

DLN92

VLNVLP

99

7

4

.SUBCKT TLE208x 1 2 3 4 5C1 11 12 2.2E–12C2 6 7 10.00E–12DC 5 53 DXDE 54 5 DXDLP 90 91 DXDLN 92 90 DXDP 4 3 DXEGND 99 0 POLY (2) (3,0) (4,0) 0 .5 .5FB 7 99 POLY (5) VB VC VE VLP VLN 0

+ 5.607E6 –6E6 6E6 6E6 –6E6. . . . GA 6 0 11 12 333.0E–6GCM 0 6 10 99 7.43E–9ISS 3 10 DC 400.0E–6HLIM 90 0 VLIM 1KJ1 11 2 10 JXJ2 12 1 10 JX

RD1 4 11 3.003E3RD2 4 12 3.003E3R01 8 5 80R02 7 99 80RP 3 4 27.30E3RSS 10 99 500.0E3VB 9 0 DC 0VC 3 53 DC 2.20VE 54 4 DC 2.20VLIM 7 8 DC 0VLP 91 0 DC 45VLN 0 92 DC 45

.MODEL DX D (IS=800.0E–18)

.MODEL JX PJF (IS=15.00E–12 BETA=554.5E–6+ VTO=–.6).ENDS

R2 6 9 100.0E3

Figure 76. Boyle Macromodel and Subcircuit

PSpice and Parts are trademarks of MicroSim Corporation.

PACKAGE OPTION ADDENDUM

www.ti.com 1-Jun-2012

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status (1) Package Type PackageDrawing

Pins Package Qty Eco Plan (2) Lead/Ball Finish

MSL Peak Temp (3) Samples

(Requires Login)

TLE2081ACD ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)

CU NIPDAU Level-1-260C-UNLIM

TLE2081ACDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2081ACDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLE2081ACDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLE2081ACP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2081ACPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2081AID ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2081AIDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2081AIP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2081AIPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2081CD ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2081CDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2081CDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLE2081CDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLE2081CP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2081CPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2081ID ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2081IDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2081IDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)




Addendum-Page 2




(Requires Login)

TLE2081IDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLE2081IP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2081IPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2082ACD ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2082ACDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2082ACDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLE2082ACDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLE2082ACP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2082ACPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2082AID ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2082AIDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2082AIDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLE2082AIDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLE2082AIP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2082AIPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2082AMFKB NRND LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type

TLE2082AMJGB ACTIVE CDIP JG 8 1 TBD A42 N / A for Pkg Type

TLE2082AMP OBSOLETE PDIP P 8 TBD Call TI Call TI

TLE2082CD ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2082CDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2082CDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLE2082CDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)




Addendum-Page 3




(Requires Login)

TLE2082CP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2082CPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2082ID ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2082IDG4 ACTIVE SOIC D 8 75 Green (RoHS& no Sb/Br)


TLE2082IDR ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLE2082IDRG4 ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)


TLE2082IP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2082IPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2082MFKB ACTIVE LCCC FK 20 1 TBD POST-PLATE N / A for Pkg Type

TLE2082MJGB OBSOLETE CDIP JG 8 TBD Call TI Call TI

TLE2082MP OBSOLETE PDIP P 8 TBD Call TI Call TI

TLE2084ACDW ACTIVE SOIC DW 16 40 Green (RoHS& no Sb/Br)


TLE2084ACDWG4 ACTIVE SOIC DW 16 40 Green (RoHS& no Sb/Br)


TLE2084ACN ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2084ACNE4 ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2084CDW ACTIVE SOIC DW 16 40 Green (RoHS& no Sb/Br)


TLE2084CDWG4 ACTIVE SOIC DW 16 40 Green (RoHS& no Sb/Br)


TLE2084CDWR ACTIVE SOIC DW 16 2000 Green (RoHS& no Sb/Br)


TLE2084CDWRG4 ACTIVE SOIC DW 16 2000 Green (RoHS& no Sb/Br)


TLE2084CN ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2084CNE4 ACTIVE PDIP N 14 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type

TLE2084IDW ACTIVE SOIC DW 16 40 Green (RoHS& no Sb/Br)




Addendum-Page 4




(Requires Login)

TLE2084IDWG4 ACTIVE SOIC DW 16 40 Green (RoHS& no Sb/Br)


TLE2084IDWR OBSOLETE SOIC DW 16 TBD Call TI Call TI (1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)

(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

OTHER QUALIFIED VERSIONS OF TLE2082, TLE2082A, TLE2082AM, TLE2082M :

• Catalog: TLE2082A, TLE2082

• Military: TLE2082M, TLE2082AM

NOTE: Qualified Version Definitions:

http://www.ti.com/productcontent

http://focus.ti.com/docs/prod/folders/print/tle2082a.html

http://focus.ti.com/docs/prod/folders/print/tle2082.html

http://focus.ti.com/docs/prod/folders/print/tle2082m.html

http://focus.ti.com/docs/prod/folders/print/tle2082am.html



Addendum-Page 5

• Catalog - TI's standard catalog product

• Military - QML certified for Military and Defense Applications

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

TLE2081ACDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLE2081CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLE2081IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLE2081IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLE2082ACDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLE2082AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLE2082AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLE2082CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLE2082IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1

TLE2084CDWR SOIC DW 16 2000 330.0 16.4 10.75 10.7 2.7 12.0 16.0 Q1

PACKAGE MATERIALS INFORMATION

www.ti.com 14-Jul-2012

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TLE2081ACDR SOIC D 8 2500 340.5 338.1 20.6

TLE2081CDR SOIC D 8 2500 340.5 338.1 20.6

TLE2081IDR SOIC D 8 2500 340.5 338.1 20.6

TLE2081IDR SOIC D 8 2500 367.0 367.0 35.0

TLE2082ACDR SOIC D 8 2500 340.5 338.1 20.6

TLE2082AIDR SOIC D 8 2500 367.0 367.0 35.0

TLE2082AIDR SOIC D 8 2500 340.5 338.1 20.6

TLE2082CDR SOIC D 8 2500 340.5 338.1 20.6

TLE2082IDR SOIC D 8 2500 340.5 338.1 20.6

TLE2084CDWR SOIC DW 16 2000 367.0 367.0 38.0

PACKAGE MATERIALS INFORMATION

www.ti.com 14-Jul-2012

Pack Materials-Page 2

MECHANICAL DATA

MCER001A – JANUARY 1995 – REVISED JANUARY 1997

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

JG (R-GDIP-T8) CERAMIC DUAL-IN-LINE

0.310 (7,87)0.290 (7,37)

0.014 (0,36)0.008 (0,20)

Seating Plane

4040107/C 08/96

5

40.065 (1,65)0.045 (1,14)

8

1

0.020 (0,51) MIN

0.400 (10,16)0.355 (9,00)

0.015 (0,38)0.023 (0,58)

0.063 (1,60)0.015 (0,38)

0.200 (5,08) MAX

0.130 (3,30) MIN

0.245 (6,22)0.280 (7,11)

0.100 (2,54)

0°–15°

NOTES: A. All linear dimensions are in inches (millimeters).B. This drawing is subject to change without notice.C. This package can be hermetically sealed with a ceramic lid using glass frit.D. Index point is provided on cap for terminal identification.E. Falls within MIL STD 1835 GDIP1-T8

IMPORTANT NOTICE

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and otherchanges to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latestissue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current andcomplete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of salesupplied at the time of order acknowledgment.

TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s termsand conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessaryto support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarilyperformed.

TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products andapplications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provideadequate design and operating safeguards.

TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, orother intellectual property right relating to any combination, machine, or process in which TI components or services are used. Informationpublished by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty orendorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of thethird party, or a license from TI under the patents or other intellectual property of TI.

Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alterationand is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altereddocumentation. Information of third parties may be subject to additional restrictions.

Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or servicevoids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.TI is not responsible or liable for any such statements.

Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirementsconcerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or supportthat may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards whichanticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might causeharm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the useof any TI components in safety-critical applications.

In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is tohelp enable customers to design and create their own end-product solutions that meet applicable functional safety standards andrequirements. Nonetheless, such components are subject to these terms.

No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the partieshave executed a special agreement specifically governing such use.

Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use inmilitary/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI componentswhich have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal andregulatory requirements in connection with such use.

TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use ofnon-designated products, TI will not be responsible for any failure to meet ISO/TS16949.

Products Applications

Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive

Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications

Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers

DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps

DSP dsp.ti.com Energy and Lighting www.ti.com/energy

Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial

Interface interface.ti.com Medical www.ti.com/medical

Logic logic.ti.com Security www.ti.com/security

Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense

Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video

RFID www.ti-rfid.com

OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com

Wireless Connectivity www.ti.com/wirelessconnectivity

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265Copyright © 2012, Texas Instruments Incorporated

http://www.ti.com/audio

http://www.ti.com/automotive

http://amplifier.ti.com

http://www.ti.com/communications

http://dataconverter.ti.com

http://www.ti.com/computers

http://www.dlp.com

http://www.ti.com/consumer-apps

http://dsp.ti.com

http://www.ti.com/energy

http://www.ti.com/clocks

http://www.ti.com/industrial

http://interface.ti.com

http://www.ti.com/medical

http://logic.ti.com

http://www.ti.com/security

http://power.ti.com

http://www.ti.com/space-avionics-defense

http://microcontroller.ti.com

http://www.ti.com/video

http://www.ti-rfid.com

http://www.ti.com/omap

http://e2e.ti.com

http://www.ti.com/wirelessconnectivity

tle208x, tle208xa, tle208xy excalibur high … · excalibur high-speed jfet-input operational...

Documents