silicon nanoelectronic devices based on … · `dr. romain wacquez `dr. matthieu pierre `dr. maud...

SILICON NANOELECTRONICDEVICES BASED ON FEW DONORS

Enrico Prati

The integration of atomic physics with quantum device technology enabled the exploration of the recent field of single/few atom based nanoelectronics. I review the basic concepts of atom based nanoelectronics, including the technological aspects of the fabrication, and the most interesting physical effects obtained in silicon single donor transistors, including coherent transport, microwave excitations, single donor spectroscopy, single charge dynamics, single spin dynamics, valley based physics, few atom circuits and the impurity band formation. Future applications in fundamental physics and classical and quantum information technologies are discussed, by highlighting the critical aspects which currently impose

limits to the most advanced developments.

Abstract

Enrico Prati |Nano2012 ‐ INVITED LECTURE

Silicon nanoelectronics

Single donor devices

Few donor physics

Outline


Section 1/3




Silicon nanoelectronics provides the ground for the addition of individual donors in devices

In this section I show some suitable devices for creating single/few atom doped devices


FinFETs


Schenkel et al. 2005‐ (Berkeley) ‐ Si/SiO2

Back gated SOI


Shinada et al. 2005‐ (Waseda) ‐ Si/SiO2

Near intrinsic silicon substrate

Enrico Prati |

Dzurak et al. 2010‐ (Australia) ‐ Si/SiO2

W H Lim et al 2011 Nanotechnology 22 ,335704

Nano2012 ‐ INVITED LECTURE

Silicon CMOS single electron transistors


20 x 20 nm x nm

Sanquer et al. 2005‐ (CEA) ‐ Si/SiO2

E Prati et al 2012 Nanotechnology 23, 215204

Section 2/3

Single donor devices


Spectrum of donors


If you put a donor in bulk Silicon,it adds new states below the conduction bandin the band gap.

The spectrum is Hydrogen‐like

Scaling down the MOSFET technology


Low temperature: you see discrete spectrum as sequential tunneling

ITRS Roadmap and deterministic doping


ITRS follows the evolution of deterministic doping technology

Source:ITRS 2011

Single atom doping ‐ 1

Enrico Prati |

Combination of scanning tunnelling microscopy and hydrogen‐resist lithography

University of New South Wales

Concept: bottom‐up V lattice site precisionX extremely slow


Single atom doping – 2

Enrico Prati |

Single atom placement with scanning probe alignment

nm-apertures for nm-accuracy

Berkeley National Laboratory:


Single atom doping – 3

Enrico Prati |

Single ion implantation

University of Waseda, Tokyo:

University of Melbourne:


Device topology and transport


Sellier et al PRL 2006 Golovach et al PRB 2010 Mazzeo et al APL 2012

Single atom based devices: review


2006 TU Delft (IMEC) [Lansbergen et al, PRL 2006]

2007 NTT [Ono et al, APL 2007] - acceptor

2008 MDM (STM) [Prati et al, PRB 2009]

320 360 400

-5

0

5

35 meV61 meV

Ec

Ecg(meV)

Vd (

mV

)

1.000E-5

5.574E-5

3.107E-4

0.001732

0.009655

0.05382

0.3000

G(e2/h)

Ids ~(P)1/2

∼

Photon assisted tunneling300 mK 40 GHz

Single atom in a NanoFET


2009 CEA (LETI) [Pierre et al, Nat. Nanotech.]

2010 UniMelbourne [Tan et al, Nano Lett.]

Single donor quantum dot: excited levels


Bulk:

Generalized temperature 1/kβby a finite grand canonical ensemble (small N)

Sample: a commercial NanoFETchannel <180x280

Defect‐SET system


Measured by the capture and emission of a single defect at the Si/SiO2

E. Prati et al., Phys. Rev. B (2006)E. Prati, J, Stat. Mech. (2010)E. Prati et al., Appl. Phys. Lett. (2010)

Tnom = 0.29 K

T2des = 0.80 K about 16-20electrons

Donor‐SET system

Enrico Prati |

Spin of electrons bound to a donor


Single spin readoutA.Morello et al., Nature 2010 Mazzeo et al., APL 2012

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0.0

0.5

1.0

Time (ms)

Nor

mal

ized

sig

nal

Imaging of individual donors


Shizuoka University

Ligowski et al 2008 APL

Kelvin force microscope

Section 3 / 3

Few donors physics


Quantum transport at low temperature


Isolated donors Semidilute regime Intermediate

Ids U

Vt

?

U = 5 meVt = 1 meV

Coulomb blokade peaks

Anderson-Mott Transition

Ids U

Vt

Lower and upper Hubbard bands.Each donor has 12 fold degenerate(6 valleys and 2 spin) levels, so 72 levels per each band are available

Activation energy


Ids U

Vt

Overlapped bands

Ids U

Vt

Localized electrons

Delocalizedelectrons

Si Conductionband

Upper band Activation energy∆E = 6-7 meV

Upper band Activation energy∆E = 1-2 meV

Separate bands

Arrays of donors: samples


E. Prati, M. Hori, F. Guagliardo, G. Ferrari, T. Shinada, Nature Nanotech. (2012)

Anderson Mott transition in the arrays of donors


E. Prati, M. Hori, F. Guagliardo, G. Ferrari, T. Shinada, Nature Nanotech. (2012)

Wigner phase to Fermi glass transition


1 Wigner phase2-3 Fermi glass

E. Prati, M. Hori, F. Guagliardo, G. Ferrari, T. Shinada, Nature Nanotechnology 2012

Applications: AC response and electron pumping


(2012)

NTT Labs in Japan

Application: donor based circuits


Leti et al APL (2011)

E. Prati (2011) J. Nanoscience andNanotechnoogyValley changeover switch

Applications to quantum information processing


Extremely challenging to reproduce or even to realize

Dzurak, JamiesonAustralia

T2=1 µs

Spin qubit based proposal Charge qubits based proposal

Application: single photon counter


Tabe et al. (2011) Physica Status Solidi a

[Waseda University]Prof. Takahiro ShinadaDr. Masahiro Hori

[CEA‐LETI]Dr. Marc SanquerDr. Romain WacquezDr. Matthieu PierreDr. Maud Vinet

Acknowledgement to co‐workers of publications


[Politecnico di Milano] Dr. Giorgio FerrariDr. Filippo Guagliardo

[Laboratorio MDM ‐ CNR]Prof. Marco FanciulliMatteo Belli Marco De MichielisGiovanni MazzeoGuillaume LetiSimone CoccoGuido Petretto

Funding:FP VII: AFSID Project (Resp. M. Sanquer)Fondazione Cariplo: ELIOS Project (Resp. M. Fanciulli)Italy-Japan Bilateral Projects (Resp. E. Prati and T. Shinada)• Grant-in-Aid for Scientific Research from MEXT, Japan• PEST 2010-2012 from MAE, Italy• CNR STM Program 2011 Consiglio Nazionale delle Ricerche (CNR)

Conclusions

Perspectives:Low consumption devicesQuantum information processingNew quantum channelsAtom based circuitsPhoton sensors

Enrico*prati_cnr*it


References


Nature Nanotechnology [IF 30.306]E. Prati, M. Hori, F. Guagliardo, G. Ferrari and T. Shinada, Anderson–Mott transition in arrays of a few dopant atoms in a silicon transistor, Nature Nanotechnology (2012)

[IF 30.306]Applied Physics Letters [IF 3.844]M. Pierre, R. Wacquez, B. Roche, X. Jehl, M. Sanquer, M. Vinet, E. Prati, M. Belli, M. Fanciulli, "Compact silicon double and triple dots realized with only two gates",

Applied Physics Letters, 95, 242107 (2009)[IF 3.844]E. Prati, M. Belli, M. Fanciulli and G. Ferrari, Measuring the Temperature of a Mesoscopic Electron System by means of Single Electron Statistics, Applied Physics Letters

96, 113109 (2010) arXiv:1002.0037 [IF 3.844]E. Prati et al., Adiabatic Charge Control in a Single Donor Atom Transistor, Applied Physics Letters, 98, 5, 053109 (2011) [IF 3.844]G.Leti, E. Prati, M. Belli, G. Petretto, M. Fanciulli, M. Vinet, R. Wacquez and M. Sanquer, Switching quantum transport in a three donors silicon Fin‐Field Effect Transistor,

Appl. Phys. Lett. 99, 242102 (2011) [IF 3.844].G. Mazzeo et al., Charge dynamics of a single donor coupled to a few electrons quantum dot in silicon, Applied Physics Letters (2012) [IF 3.844]Nanotechnology [IF 3.979]E. Prati, M. De Michielis, M. Belli, S. Cocco, M. Fanciulli, D. Kotekar‐Patil, M. Ruoff, D. P Kern, D. A. Wharam, J. Verduijn, G. C. Tettamanzi, S. Rogge, B. Roche, R. Wacquez,

X. Jehl, M. Vinet and M. Sanquer., Few Electron Limit of n‐type Metal Oxide Semiconductor Single Electron Transistors, Nanotechnology, 23, 215204 (2012) [IF 3.979]Physical Review B [IF 3.979]E. Prati, R. Latempa, M. Fanciulli, "Microwave Assisted Transport in a Single Donor Silicon Quantum Dot", Physical Review B 80, 14, 165331 (2009) [IF 3.979] E. Prati, M. Fanciulli, G. Ferrari, M. Sampietro, “Effect of the Triplet State on the Random Telegraph Signal in Si n‐MOSFETs”, Phys. Rev. B 74, 033309 (2006) [IF 3.691]Journal of Statistical Mechanics [IF 2.758]E. Prati, Finite Quantum Grand Canonical Ensemble and Temperature from Single Electron Statistics in a Mesoscopic Device , J .of Stat. Mech. P01003 (2010)[IF 2.758]Journal of Applied Phsycis [IF 2.201]G. Ferrari, L. Fumagalli, M. Sampietro, E. Prati and M. Fanciulli, “DC current modulation in field effect transistors operating under microwave irradiation for quantum read

out”, J. Appl. Physics, 98, 044505 (2005) [IF 2.201]E. Prati, M. Fanciulli, G. Ferrari, A. Calderoni, M. Sampietro, "Effect of microwave irradiation on the emission and capture dynamics in silicon metal oxide semiconductor

field effect transistors", Journal of Applied Physics 103, 104502, (2008) [IF 2.201]E. Prati, M. Fanciulli, G. Ferrari, M. Sampietro, "Giant random telegraph signal generated by single charge trapping in submicron n‐metal‐oxide‐semiconductor field‐effect

transistors", Journal of Applied Physics 103, 1 (2008) [IF 2.201]Physics Letters A [IF 2.174]E. Prati, et al., "Microwave irradiation effects on random telegraph signal in a MOSFET", Physics Letters A 370, 491‐493 (2007) [IF 2.174]E. Prati, M. Fanciulli, "Manipulation of localized charge states in n‐MOSFETs with microwave irradiation", Physics Letters A 372, 3102‐3104 (2008) [IF 2.174]Journal of Nanoscience and Nanotechnology [IF 1.987]E. Prati, Valley Blockade Quantum Switching in Silicon Nanostructures , J. Nanosc. and Nanotech. 11, 10, 8522‐8526 (2011) [IF 1.987]

silicon nanoelectronic devices based on … · `dr. romain wacquez `dr. matthieu pierre `dr. maud...

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