shanghai feb 20111 shanghai microsemi semiconductor co., ltd

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Shanghai Feb 2011 1 Shanghai Microsemi Semiconductor Co., Ltd.

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Page 1: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 1

Shanghai Microsemi

Semiconductor Co., Ltd.

Page 2: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 2

Company Profile

• Located at Xin Zhuang, Shanghai, China

• Established in September 1995

• 100% owned by Microsemi Corp in Dec 2007

• 4” Wafer Fab with monthly output 60K pcs, 80% utilization rate

Page 3: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 3

Products Portfolio• GPP Chips• Finished Goods

Page 4: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 4

Finish Goods

Diode

GPP Diode

ModulesBridges

3-Phase Rectifier Bridges

High VoltageStack Diode

Single-PhaseRectifier Bridges

Diode Modules

Rectifier+SCR Modules

3-Phase Rectifier Modules

FRED Modules

SCR Modules

Products Tree

Page 5: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 5

Microsemi Shanghai ’s

Technology Advantages

Page 6: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 6

Passivation techniquesPassivation techniquesStar Die Construction

Process Diffused wafer (Open Junction)

Diffused wafer

+ Silicone rubber

protection

Grooves etching

+ Glass layer on etched grooves

Grooves etching

+ SIPOS

+ Glass layer on etched grooves

Quality rating

Low end

Low quality

Low end

Low quality

Medium quality Better than medium quality

P+ N

N+

P+ N

+

P+ N N+

P+N

N+N

N+ P+

Page 7: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 7

Microsemi’s Microsemi’s 5-Star5-Star Passivation Passivation

P+ N

N+

Silicon nitride layer

= Silicon Nitride & Glass passivation = Silicon Nitride & Glass passivation Microsemi uses the process for all hi-rel discrete devicesMicrosemi uses the process for all hi-rel discrete devices

Process : Grooves etching + Silicon Nitride + glass layer on Process : Grooves etching + Silicon Nitride + glass layer on etched grooves etched grooves

Quality rating: Highest quality process Quality rating: Highest quality process

Page 8: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 8

Advantages of SMSC’s GPP chips• Technology coming from Microsemi

Corp’s Hi-Rel processing

• Unique multilayer passivation ensure excellent high temperature characteristics and passing 200C HTRB test

• Die size from 0.050” Sq to 0.672” Hex

LPCVD : Low Pressure Chemical Vapor Deposition

High purity evaporated metal ensure a strong metallurgical bond and provides extremely low contact resistance

P+ Layer

N+ Layer

LPCVD growth layers plus glass passivation

Page 9: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 9

GPP Chips -- SMSC’s New developed Passivated Double Isolation Chips

Double Isolation Technology

Advantages:

Page 10: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 10

FG’s Release to Market (RTM) Procedures

Die qualification

1. Visual examination

2. Electrical inspection

3. HTRB

SMSC SMSC/Sub-con SMSC

Die receiving inspection

1. Visual / Electrical inspection

2. Assembly

Finished Goods (FG)

1. Visual/Electrical

2. Stamping

3. Reliability tests

REPEATEDABILITY TRIALS

FG inspection

1. Visual / Electrical inspection

2. Reliability tests (next slide)

RTM

Page 11: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 11

Reliability Tests Plan

Test Description PurposeDevice Under

Test

1High Temperature reverse

Voltage Burn-inDetermine the effect of bias and temp on the

device over an extended period of timeDie & F.G.

2 AutoclaveDetermine the effect of temp, humidity & pressure

on the device over time, unbiasedF.G.

3High temperature storage

test

To accelerate failure mechanisms which are thermally activated through the application of

extreme temp, unbisedF.G.

4 Temperature CyclingDetermine the effect of temp on Material Thermal

MismatchF.G.

5 Intermittent Operating Life

To evaluate the bulk stability of the die and to generate defects resulting from manufacturing aberrations that are manifested as time and

stress-dependent failures

F.G.

6 Reverse Energy test Application test for high voltage diodeHigh voltage

diode

7 Welder test Application test for UFT modules UFT Modules

Page 12: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 12

Reliability TestsTest Description Test Conditions

High Temperature Storage Life(HTSL)

Ta = 150 , T=48H,℃No bias

Temperature Cycling Test(TCT)

HOT Ta=Tvjm T= 30mins, COLD Ta=Tvjl T= 30mins, TRANSFERRING ≤

10secs, Cycles=10

Pressure Cooker Test (PCT)—(Plastic package)

15P.S.I @ 121 , T=48H℃

High Temperature Reverse Bias(HTRB)

Tj=150 , VBR=80%VRRM, T=96H℃

Intermittent Operating Life(OP-Life)

Ton = Toff = 5minutes, or Ton =From Tj= 25+/-5 to Tj =150+0/-10 , ℃ ℃

Toff= From Tj= 150+0/-10 to Tj =25+/-5 ℃ ℃

Page 13: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 13

Single Phase Bridge Rectifiers Specs:

Io = 0.5~50A STD VRRM =200 ~ 1000V

Typical Applications: GBJ 、 IH 、 KBJ Series:

Induction Heater/Home Appliance/Switching Power/Industrial Power Controller

GBU 、 GBL 、 KBP Series: PC Power/LCD-TV/Industrial Power Controller

GBPC & GBPC-W Series: Welder/Air-condition/Communication Power Supply/Industrial Power Controller

Page 14: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 14

High Voltage Stack Diodes • Plastic case UL flammability recognition 94V-0

• Replacement of Philips parts (e.g. BYX134GPL)

• Using SMSC’s unique passivated GPP chips

• High voltage up to 6KV GPP chips

• High maximum operating temperature

• Application: Ignition systems; High voltage coils;

X-ray system; Microwave system, etc.

Business Partners: Federal Mogul Delphi Eldor

TYPE

MAIN ELECTRICAL PARAMETERSPKG

DIMMVRRM / kV IF ( AV ) / mA IFSM/A VF/ V

BYX134P 4 10 30 5.00 DO-15

MSHV40P 4 10 30 5.00 DO-41

Page 15: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 15

FRED ModulesUltra Fast Recovery Epitaxial Diodes

•Common cathode configuration •Epoxy Potting body •Low Leakage Current •Low Forward Voltages •150 Operating Junction Temperature ℃•RoHS Compliance

CODE VRRM VF I F Trr

UFT20040CT 400V 1.1 V 100A 75ns

UFT20060CT 600V 1.2 V 100A 75ns

Page 16: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 16

3-Phase Bridge Rectifiers MT Series

35 to 50 Ampere Current Rating

800V to 1800V Reverse Voltage Rating

Direct Replacement to IXYS & IR parts

Typical Applications:

UPS, Industrial Power Controller,

Input rectifiers for PWM inverter,

Battery DC power supplies

High-frequency Switching Power Supply

Page 17: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 17

3-Phase Bridge Rectifiers

Type Frame Remark

MT3516A

Framework: Aluminium Copper Clad Laminate

The lower Case-temperature, the higher efficient, the better reliability, and the longer lifetime

MT3516Framework: Aluminium based Case

NEW

Page 18: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 18

3-Phase Bridge Rectifiers

Brand Type Rthj-c( /W)℃

MSC MT3516A 1# 0.73

MSC MT3516A 2# 0.70

(A) Vxx36-16 1# 1.76

(A) Vxx36-16 2# 2.04

(B) 36Mx160 1# 2.70

Page 19: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 19

Assembly Technology -- “Vacuum + H2” Multi-Gas Brazing Technology

-- Brazing with DBC for excellent thermal distribution

-- Ultrasonic scanning to ensure reliable brazing quality

-- High insulation voltage ≥ 3000V

-- Vacuum Welding Technology -- Voidage: <2.5%

-- X-ray Whole Body Scanned

Power Diode Modules NEW

Quality Assurance SMSC’s New developed

Passivated Double Isolation

Chips Inside

100% HTRB Test for Each

Lot

Double Moat Structure

DGP Chip

DGP design would improve the reliability and performance

Page 20: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 20

Power Diode Modules Diode-Diode Modules

CODE CIRCUIT VRRM IF PKG

MSKD

800V-1800V

36A-120A D1

165A-200A D2

MSAD

250A-300A D3

350A-400A D4

MSCD

500A-600A D5

800A D6

Page 21: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 21

Power Diode Modules Rectifier Modules

CODE CIRCUIT VRRM ID PKG

MSD 800V-1800V

30A-50A M1

52A-75A M2

100A-200A M3

Page 22: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Nov 2010 22

Power Diode Modules

Applications

-- DC Power Equipment

-- Inverter

-- Battery Charger

-- DC Motor Power Supply

-- Welding Machine

-- PWM Converter Rectifier

Page 23: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 23

New product Promotion

Applications -- Input rectification

-- Output rectifies which are available in indentical package outlines

-- Industrial Level

60EPS Series •High Reliability & High current capacity•Low Leakage Current•Low Forward Voltage•150 Operating Junction Temperature℃•ROHS Compliance•Replacement of IR Parts•The official approval document of 60EPS by APC of Schneider Denmark.

TYPE

MAIN ELECTRICAL PARAMETERSPKG

DIMMVRRM / V IF ( AV ) / A IFSM/A VRSM/ V

60EPS12 1200 60 1100 1300TO-247AC

60EPS16 1600 60 1600 1700

Page 24: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 24

New product Promotion ——3-phase Rectifier Modules

MSDM Series• Glass passivated chip• High Reliability• Superior thermal conductivity• Blocking voltage:800 to 1800 V• Heat transfer through aluminum

oxide DBC ceramic isolated metal

baseplate

Application --Three phase rectifiers for power supplies

--Rectifiers for DC motor field supplies

--Battery charger rectifiers

--Input rectifiers for variable frequency drives

Thin modules(17mm high)

M2-1M3-1

CODE IF CASE

MSDM 50~100A

M2-1

150~200A M3-1

Page 25: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 25

New product Promotion ——Diode Modules

MSCD-B/MSAD-B/MSKD-B Series• Blocking voltage:800 to 1800V

• Heat transfer through aluminum

oxide DBC ceramic isolated metal

baseplate

• Glass passivated chip

Application• Non-controllable rectifiers for

AC/AC converters

• Line rectifiers for transistorized

AC motor controllers

• Field supply for DC motors

D2-1

MSKD-B3 12

MSAD-B3 12

MSCD-B3 12

D1-1

Circuit CODE IFCAS

E

MSCD-BMSKD-BMSAD-B

36A-120A D1-1

165A-240A D2-1

Page 26: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 26

New product Promotion ——Thyristor Modules

MSTC/MSFC Series• Isolation voltage 3000V• High surge capability• Glass passivated chips• International standard package • Simple Mounting• Heat transfer through aluminum oxide DCB

ceramic isolated metal baseplate

Application• Power Converters• Lighting Control• DC Motor Control and Drives • Heat and temperature control

MSTC1 32

4

7

5

6

Circuit

T1/F1

T2/F2

MSFC1 32

45

Page 27: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 27

New product Promotion ——3 phase Rectifiers+SCR Modules

MSDT Series• Three Phase Diode and a

Thyristor• Isolation voltage 3000V• High surge capability• Glass passivated chips• Simple Mounting• Isolated Module Package

Application• Inverter for AC or DC motor control• Current stablilzed power supply• Switching power supply

1 2

5 4 3

0

67

Circuit

M4 M5

CODE Case

MSDT75 M4

MSDT100 M4

MSDT150 M5

MSDT200 M5

Page 28: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 28

Power ModulesCross Reference Guide (partial) :

* For Reference Only

Microsemi Semikron IXYS

MSD75-16 SKD82/16 VUO82-16N07

MSD100-16 SKD110/16 VUO110-16N07

MSD160-16 SKD160/16 VUO160-16N07

MSD200-16 SKD210/16 VUO190-16N07

MSDM150-16 / VUO162-16N07

MSDM200-16 / VUO192-16N07

MSCD100-16 SKKD100/16 MDD95-16N1B

MSCD165-16 SKKD162/16 MDD172-16N1B

MSCD250-16 SKKD260/16 MDD220-16N1B

MSCD400-16 SKKD380/16 MDD312-16N1B

MSTC25-16 SKKT27/16 MCC26

MSTC60-16 SKKT57/16 MCC56

MSTC110-16 SKKT106/16 MCC95

MSTC160-16 SKKT162/16 MCC161

MSFC25-16 SKKH27/16 MCD26

MSFC60-16 SKKH57/16 MCD56

MSFC110-16 SKKH106/16 MCD95

MSFC160-16 SKKH162/16 MCD161

3-phanse modules

Diode modules

Thyristor/Diode modules

Thyristor/Thyristormodules

Page 29: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 29

Power Modules Cross Reference Guide (partial) :

* For Reference Only

Microsemi SanRex

MSDT75-16 DFA75BA160

MSDT100-16 DFA100BA160

MSDT150-16 DFA150AA160

MSDT200-16 DFA200AA160

MSDM50-16 DF50AA160

MSDM75-16 DF75AA160

MSDM100-16 DF100AA160

MSCD60B-16 DD60KB160

MSCD100B-16 DD100KB160

MSCD165B-16 DD160KB160

MSCD240B-16 DD240KB160

Three Phase Diode + aThyristor

3-phanse modules

Diode modules

Page 30: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 30

Major Customers

Page 31: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 31

Quality System

• ISO

9001:2008

• ISO 14001:2004

Page 32: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 32

Quality System

• RoHS Compliance

• REACH

Compliance

• UL Approved

Page 33: Shanghai Feb 20111 Shanghai Microsemi Semiconductor Co., Ltd

Shanghai

Feb 2011 33

Thank YouShanghai Microsemi Semiconductor Co., Ltd.

203 Shen Nan Road, Shanghai, 201108, PRC

Website: http://www.smsemi.com

Email: [email protected]

Sales : 0086 - 21 - 6489 - 6650