Sheng S. Li

SemiconductorPhysical Electronics

Second Edition

With 230 Figures

4) Springer

Contents

Preface

1. Classification of Solids and Crystal Structure

11.1 Introduction

1

1.2 The Bravais Lattice

21.3 The Crystal Structure

6

1.4 Miller Indices and Crystal Planes

91.5 The Reciprocal Lattice and Brillouin Zone

11

1.6 Types of Crystal Bindings

141.7 Defects in a Crystalline Solid

18

Problems 23Bibliography

24

2. Lattice Dynamics 262.1 Introduction 262.2 The One-Dimensional Linear Chain 272.3 Dispersion Relation for a Three-Dimensional Lattice 332.4 The Concept of Phonons 362.5 The Density of States and Lattice Spectrum 372.6 Lattice Specific Heat 39

Problems 42References 44Bibliography 44

3. Semiconductor Statistics 453.1 Introduction 453.2 Maxwell—Boltzmann Statistics 463.3 Fermi—Dirac Statistics 503.4 Bose—Einstein Statistics 563.5 Statistics for the Shallow-Impurity States in

a Semiconductor 57

ix

x Contents

Problems 59Bibliography 60

4. Energy Band Theory 614.1 Introduction 614.2 Basic Quantum Concepts and Wave Mechanics 624.3 The Bloch—Floquet Theorem 664.4 The Kronig—Penney Model 674.5 The Nearly Free Electron Approximation 744.6 The Tight-Binding Approximation 804.7 Energy Band Structures for Some Semiconductors 864.8 The Effective Mass Concept for Electrons and Holes 934.9 Energy Band Structures and Density of States

for Low-Dimensional Systems 96Problems 101References 103Bibliography 103

5. Equilibrium Properties of Semiconductors 1055.1 Introduction 1055.2 Densities of Electrons and Holes in a Semiconductor 1065.3 Intrinsic Semiconductors 1135.4 Extrinsic Semiconductors 1165.5 lonization Energies of Shallow- and Deep-Level Impurities 1235.6 Hall Effect, Electrical Conductivity, and Hall Mobility 1255.7 Heavy Doping Effects in a Degenerate Semiconductor 128

Problems 130References 132Bibliography 133

6. Excess Carrier Phenomenon in Semiconductors 1346.1 Introduction 1346.2 Nonradiative Recombination: The Shockley—Read—Hall Model 1356.3 Band-to-Band Radiative Recombination 1406.4 Band-to-Band Auger Recombination 1426.5 Basic Semiconductor Equations 1466.6 The Charge-Neutrality Equation 1496.7 The Haynes—Shockley Experiment 1516.8 The Photoconductivity Decay Experiment 1546.9 Surface States and Surface Recombination Velocity 1596.10 Deep-Level Transient Spectroscopy Technique 1626.11 Surface Photovoltage Technique 165

Problems 169References 170Bibliography 170

Contents xi

7. Transport Properties of Semiconductors 1717.1 Introduction 1717.2 Galvanomagnetic, Thermoelectric, and Thermomagnetic

Effects 1737.3 Boltzmann Transport Equation 1807.4 Derivation of Transport Coefficients for

n-type Semiconductors 1827.5 Transport Coefficients for the Mixed Conduction Case 1957.6 Transport Coefficients for Some Semiconductors 198

Problems 208References 209Bibliography 210

8. Scattering Mechanisms and Carrier Mobilities in Semiconductors 2118.1 Introduction 2118.2 Differential Scattering Cross-Section 2148.3 Ionized Impurity Scattering 2178.4 Neutral Impurity Scattering 2218.5 Acoustical Phonon Scattering 2228.6 Optical Phonon Scattering 2288.7 Scattering by Dislocations 2308.8 Electron and Hole Mobilities in Semiconductors 2318.9 Hot-Electron Effects in a Semiconductor 239

Problems 243References 244Bibliography 244

9. Optical Properties and Photoelectric Effects 2469.1 Introduction 2469.2 Optical Constants of a Solid 2479.3 Free-Carrier Absorption Process 2529.4 Fundamental Absorption Process 2569.5 The Photoconductivity Effect 2649.6 The Photovoltaic (Dember) Effect 2759.7 The Photomagnetoelectric Effect 277

Problems 281References 283Bibliography 283

10. Metal-Semiconductor Contacts 28410.1 Introduction 28410.2 Metal Work Function and Schottky Effect 28510.3 Thermionic Emission Theory 28810.4 Ideal Schottky Contact 29010.5 Current Flow in a Schottky Diode 295

xii Contents

10.6 Current—Voltage Characteristics of a Silicon and a GaAsSchottky Diode 300

10.7 Determination of Schottky Barrier Height 30510.8 Enhancement of Effective Barrier Height 31110.9 Applications of Schottky Diodes 31910.10 Ohmic Contacts in Semiconductors 324

Problems 330References 332Bibliography 333

11. p-n Junction Diodes 33411.1 Introduction 33411.2 Equilibrium Properties of a p-n Junction Diode 33511.3 p-n Junction Diode Under Bias Conditions 34111.4 Minority Carrier Distribution and Current Flow 34411.5 Diffusion Capacitance and Conductance 35111.6 Minority Carrier Storage and Transient Behavior 35411.7 Zener and Avalanche Breakdowns 35711.8 Tunnel Diodes 36311.9 p-n Heterojunction Diodes 36611.10 Junction Field-Effect Transistors 371

Problems 377References 380Bibliography 380

12. Solar Cells and Photodetectors 38112.1 Introduction 38112.2 Photovoltaic Devices (Solar Cells) 38312.3 Photodetectors 417

Problems 454References 456Bibliography 457

13. Light-Emitting Devices 45813.1 Introduction 45813.2 Device Physics, Structures, and Characteristics

of LEDs 45913.3 LED Materials and Technologies 47213.4 Principles of Semiconductor LDs 48813.5 Laser Diode (LD) Materials and Technologies 493

Problems 509References 511Bibliography 512

Contents xiii

14. Bipolar Junction Transistors 51314.1 Introduction 51314.2 Basic Device Structures and Modes of Operation 51414.3 Current–Voltage Characteristics 51614.4 Current Gain, Base Transport Factor, and Emitter

Injection Efficiency 52414.5 Modeling of a Bipolar Junction Transistor 52814.6 Switching and Frequency Response 53414.7 Advanced Bipolar Junction Transistors 54114.8 Thyristors 54214.9 Heterojunction Bipolar Transistors 548

Problems 562References 565Bibliography 565

15. Metal-Oxide-Semiconductor Field-Effect Transistors 56715.1 Introduction 56715.2 An Ideal Metal-Oxide-Semiconductor System 56815.3 Oxide Charges and Interface Traps 57615.4 MOS Field-Effect Transistors 58215.5 SOI MOSBETS 59615.6 Charge-Coupled Devices 601

Problems 609References 610Bibliography 610

16. High-Speed III-V Semiconductor Devices 61316.1 Introduction 61316.2 Metal–Semiconductor Field-Effect Transistors 61416.3 High Electron Mobility Transistors 63016.4 Hot-Electron Transistors 64616.5 Resonant Tunneling Devices 65016.6 Transferred-Electron Devices 653

Problems 659References 660Bibliography 661

Solutions to Selected Problems 664

Appendix 687

Index 689