samsung nc10 winchester
TRANSCRIPT
8-1
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
8. Block Diagram and Schematic
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
1 of
55
3
Page
.
A
Page
.
APPROVAL
C
30
DDR2
TER
MINA
TION
DDR2
ON
BOAR
D
45
Page
.
Page
.
1 44
Mode
l Na
me
:
Page
.
37
DIAM
ONDV
ILLE
(N2
70)
42
Page
.
EXCEPT AS AUTHORIZED BY SAMSUNG.
D
PROPRIETARY INFORMATION THAT IS
KBD
CONN
& D
EBUG
POR
T
2
Page
.
THIS DOCUMENT CONTAINS CONFIDENTIAL
PROPRIETARY INFORMATION THAT IS
MICO
M
Page
.
14~1
5
MOUN
T HO
LE
C A
D
4
Page
.
A
INTE
L D
IAM
ON
DV
ILLE
DDR2
SOD
IMM
27~2
9
Revi
sion
:
4
Page
.
Dev.
Ste
p
:
2
P3.3
V_AU
X &
P5V_
AUX
Page
.
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
1.0
7~8
SA
MS
UN
G
Page
.
4
Page
.
2610~1
3
1 1
DRAW
165
TRAN
SMIT
TER
USB
38B
B
Page
.Pa
ge.
Page
.
17
THER
MAL
MONI
TOR
33
2
T.R.
Dat
e
:
B
AUDI
O CO
DEC
(ALC
262-
GR)
Page
.
OPER
ATIO
N BL
OCK
DIAG
RAM
POWE
R DI
SCHA
RGER
Page
.
A
1
18~2
1
AMP
& SP
EAKE
R &
MIC
Page
.
3IN1
SUB
POWE
R SE
QUEN
CE
Page
.
Chip
Set
:
WIN
CHES
TER
LED
FPC
CONN
ECTO
R PO
WER
S/W
392
CHECK
Page
.
CLOC
K DI
STRI
BUTI
ON
CHAR
GER
24
D
1 1
SAMSUNG ELECTRONICS CO’S PROPERTY.
47
C
ELEC
TRO
NICS
C
D A
43
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
2
SWIT
CHED
POW
ER
B
22
BOAR
D IN
FORM
ATIO
N
MINI
-CAR
D (W
irel
ess)
COVE
R
CALI
STOG
A (I
NTEL
945G
SE)
Page
.
2 2
Page
.
INTE
L 94
5GSE
Page
.
SAM
SUNG
PRO
PRIE
TARY
49~5
0
SAMSUNG ELECTRONICS CO’S PROPERTY.
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
DDR2
POW
ER
B
Page
.
B
31254
Page
.
Page
.
CARD
BUS
CONT
ROLL
ER (
AU63
71)
4
3
ICH7
-M
CPU
:
PCB
Part
No
:
9
Page
.CR
T CO
NN.
SAM
SUNG
PRO
PRIE
TARY
THIS DOCUMENT CONTAINS CONFIDENTIAL
4
3
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
D
CHIP
SET
POWE
R (P
1.0
5V &
P 1
.5V)
Page
.
EXCEPT AS AUTHORIZED BY SAMSUNG.
THIS DOCUMENT CONTAINS CONFIDENTIAL
46
EXCEPT AS AUTHORIZED BY SAMSUNG.
A
Page
.
34
HDD
CONN
ECTO
R (S
ATA)
Page
.
C
WINC
HEST
ER M
AIN
CLOC
K GE
NERA
TOR
(CK-
505M
)
TEST
POI
NTS
3
6
BIOS
COD
E
1
36
DTa
ble
of C
onte
nts
4 Rema
rks
:
35 4020
08.0
8.20
41
3
Page
.
Page
.
Page
.
32~3
3
CPU
VRM
POWE
R (V
CC_C
ORE)
Page
.LC
D(LV
DS)
CONN
.
Page
.
Page
.
23
C
LAN
(GIG
ABIT
)
SAM
SUNG
PRO
PRIE
TARY
PV
8-2
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
2 of
55
Pow
er S
/W
Bat
t.
3
P0
2
TFT_
LCD
3
LAN
CO
NTR
OLL
ER
Wire
less
LAN
DIAM
OND
VILL
E
CK-5
05
Aud
io
High
Def
initio
n Au
dio
HP
TOU
CH
PA
D
Aud.
P1
945G
SE
HS
DP
A/W
ibro
CPU2
_THE
RMDA
/DC
Page
P6PC
I_ E
XP2
MIN
I CA
RD
2
ICH
AB
SYNA
PTIC
S
optio
n
2.5i
nch
C
SAM
SUNG
PRO
PRIE
TARY
EXCEPT AS AUTHORIZED BY SAMSUNG.
SAMSUNG ELECTRONICS CO’S PROPERTY.
GE
NE
RA
TOR
ELEC
TRO
NICS
8.9"
/10.
2" W
IDE
C
Page
Page
1
H8S-
2110
B
437
uFCB
GA
Type
B
Page
THE
RM
AL
LPC
1
2P
3in1
B’d
PCI_
EXP
1
533
MHz
PCI_
EXP
3
GM
CH
USB
(2)
Car
dBus
200P
Page
SP
I RO
M
0.3M
Cam
era
533M
Hz F
SB
RTC
MIC
-IN88
E804
0
A
P4
Blu
etoo
th
USB2
.0
AMP
2P
P2
Mod
ule
optio
n
MO
NIT
OR
Page
SPKR
R
ICH7
-M
ALC2
72
HDAU
DIO
USB
(1):d
ebug
por
t
SATA
OPE
RATI
ON
BLO
CK D
IAG
RAM
SIM
M C
ard
Page
Page
THIS DOCUMENT CONTAINS CONFIDENTIAL
Spac
e ba
r
SPI
P5
998
uFCB
GA
Type
Tran
sfor
mer
CR
T
SA
MS
UN
G
8280
1 G
BM
MIN
I CA
RD
1
652
FCBG
A Ty
pe
Page
P3LV
DS
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
EMC2
102
4
Page
HD
D
AU63
71
CP
U
4
LAN
RJ45
D
MIC
OM
P/S2
Page
2
DD
R2-
SO
DIM
M
PCI_
EXP
D
CLO
CK
KE
YB
OA
RD
PROPRIETARY INFORMATION THAT IS
MAX
1 G
BVG
A
SPKR
L
P7US
B (3
)
2P
8-3
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
3 of
55
1
0 0 0 00 0 0 0 0 0 0 00 0
P3.3
V
P1.8
V_AU
X
2.5V
swi
tche
d po
wer r
ail (
off i
n S3
-S5)
P2.5
V
5.0V
pow
er ra
il (of
f in
S4-S
5)P5
V_AU
X
VCCP
P0.9
V
1.05
V po
wer r
alil.
GM
CH c
ore,
CPU
/GM
CH F
SB T
erm
inat
ion.
DDR2
Ter
min
atio
n
Devic
esID
SEL#
REQ
/GNT
#In
terru
pts
I C /
SMB
Addr
ess
Devic
es
1 1 11 1 1 1 1 1 1 11 1 1 11
6 7CA
MER
A
UHCI
_0
UHCI
_1
UHCI
_2
UHCI
_3
USB
Hub
to P
CILP
C Br
idge
/IDE/
AC97
/SM
BUS
Inte
rnal
MAC
AD29
(inte
rnal
)AD
30(in
tern
al)
AD31
(inte
rnal
)AD
24(in
tern
al)
0
0.90
8 V
0.74
8 V
0.89
2 V
0.82
8 V
0.81
2 V
0.79
6 V
0.78
0 V
0.73
2 V
0.71
6 V
0.70
0 V
0.87
6 V
0.86
0 V
0.84
4 V
0.76
4 V
01
-16
hBA
TTER
Y00
01 0
11h
-5E
hW
83L7
71G
0101
111
x
P3.3
V
VCCP
P1.8
V_AU
X
VCC_
CORE
CPU
(8)
P1.5
V_AU
X
P5V
USB
PORT
11 1 1 1 1 1 1 11 1 1 1 1
00.
924
VM
ICO
M(2
6)
DMB(
28)
MDC
(29)
M
ini-P
CI(3
0)
R5C8
41(3
1)
STAC
9752
(34)
CP
U VR
M(4
0)
MIC
OM
PO
WER
(43)
LE
D B’
D(44
) B
LUET
OO
TH(2
8)
P1.5
VCP
U(8)
91
5GM
S(11
) IC
H6-M
(20)
P2.5
V91
5GM
S(11
) IC
H6-M
(20)
LC
D(23
) C
RT(2
4)
MIC
OM
(26)
DDR2
Ter
min
atio
n(16
) S
ODI
MM
(17)
P5V_
AUX
Ther
mist
or(9
) IC
H6-M
(20)
DD
R PO
WER
(39)
P5
V(42
)
P3.3
V_AU
XTh
erm
al M
orni
tor(9
) IC
H6-M
(19)
M
ICO
M(2
6)
LAN(
27)
MDC
(29)
M
ini-P
CI(3
0)
LB L
ED(3
6)P3
.3V(
42)
P2.
5V(4
2)
MIC
OM
PO
WER
(43)
915G
MS(
11)
DDR
2 O
N’BD
(14)
SO
DIM
M(1
7)
ICH6
-M(2
0)
P1.5
V(42
)
CLO
CK(6
) C
PU(7
) 9
15G
MS(
10)
ICH6
-M(1
8)
MIC
OM
(26)
P1.5
V_DM
I
0 1 0 0 0 1 1 11 1 1 1 0
0 01
W83
L786
NG5C
h01
01 1
10x
XHS
DPA
BLUE
TOO
TH
YONA
H-UL
V
3.3V
pow
er ra
il (of
f in
S4-S
5)P3
.3V_
LAN
P5V_
ALW
Out
put v
olta
ge o
f MAX
1999
. (if
VDC
is re
mov
ed, i
t will
be o
ff)(if
VDC
is re
mov
ed, i
t will
be o
ff)
YONA
H-UL
V
P2.5
V_LA
NP1
.2V_
LAN
Inte
rnal
Reg
ulat
or’s
Powe
r of L
AN C
ontro
ller
1.34
0 V
1.32
4 V
1.30
8 V
1.29
2 V
1.24
4 V
1.22
8 V
1.21
2 V
1.38
8 V
1.37
2 V
1.35
6 V
1.27
6 V
0 0 1 01
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
B
SAM
SUNG
PRO
PRIE
TARY
B
A
D
2
A
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
ELEC
TRO
NICS
13
1 1 1 1 1 10 0 0 1
0 1 0 011.
404
V
C
3
C
4
D
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RSBO
ARD
INFO
RMAT
ION In
tern
al R
egul
ator
’s Po
wer o
f LAN
Con
trolle
r
0 1 0 1 10 0 1 1 1
0 0 0 10
0
5.0V
swi
tche
d po
wer r
ail (
off i
n S3
-S5)
P5V
5.0V
swi
tche
d po
wer r
ail (
off i
n S3
-S5)
AUD_
P5V
Need
to b
e up
date
d!!
4
SA
MS
UN
G
12
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
1.5V
(Dire
ct M
edia
Inte
rface
Com
pens
atio
n)
0 00 0 0 - 0
VID5
1 1 1 11 1 1
0
INV_
VDC
DC p
ower
(Inv
erte
r)LC
D_VD
D3V
3.3V
(LCD
)VC
C_CR
T5.
0V (C
RT)
SD3_
VCC
3.3V
(3in
1 B’
D)CB
3_VC
C3.
3V (C
F ca
rd)
AVDD
5.0V
(ADI
1986
)AM
P_VD
D5.
0V (A
udio
AM
P)
3-IN
-1
PRTC
_BAT
10 1 0 1
1.19
6 V
1.18
0 V
1.16
4 V
1.00
4 V
1.14
8 V
1.08
4 V
1.06
8 V
1.05
2 V
1.03
6 V
0.98
8 V
0
MIC
OM
_P3V
DEEP
ER S
LEEP
MO
DERe
fer t
o pa
ge43
Pow
er R
ail
Dev
ices
(Pag
e N
umbe
r)
Powe
r Rai
lDe
scrip
tions
P0.9
V
CLO
CK(6
) T
herm
al s
enso
r(9)
SO
DIM
M(1
7)
ICH6
-M(1
9)
FWH(
22)
LCD
(23)
HD
D(25
)
Port
Num
ber
ASSI
GNE
D TO
3.3V
(can
dro
p to
2.0
V m
in. i
n G
3 st
ate)
sup
ply
for t
he R
TC w
ell.
Out
put v
olta
ge o
f MAX
1999
.
ICH6
-M (2
0)
CRT(
24)
MIC
OM
(26)
DM
B(28
) U
SB(2
9)
Min
i-PCI
(30)
R5
C841
(31)
STAC
9752
(34)
Au
dio
AMP(
35)
DDR
PO
WER
(39)
LE
D B’
D(44
)
E,F,
G
1 1 1 1 0
0 0 0 10 0 1 1 1 10
Prog
ram
able
ICH
6M
aste
rSM
BUS
Mas
ter
Cloc
k, U
nuse
d Cl
ock
Out
put D
isabl
eD2
hCK
-505
M (C
lock
Gen
erat
or)
1101
001
X-
A0h
SODI
MM
010
10 0
00X
Mas
ter
MIC
OM
Addr
ess
VID2
VID1
VID0
0 0 1 01 1 0 0 1 0 1 11
Hex
Bus
2 USB
PORT
Ass
ign
Port
Num
ber
ASSI
GNE
D TO
USB
PORT
US
B PO
RT0 1 2
Syst
em P
ower
Sta
tes
3
4 5
0
1 1 0 1 0 1 0 10 1 0 1 1
1.70
8 V
1.69
2 V
VID3
- 0
HIG
H FR
EQUE
NCY
MO
DE
LOW
FRE
QUE
NCY
MO
DE
YONA
H-UL
V
Prim
ary
DC s
yste
m p
ower
sup
ply
(9 to
19V
)
1.5V
swi
tche
d po
wer r
ail (
off i
n S3
-S5)
VDC
VCC_
CORE
P1.5
V
Core
vol
tage
for Y
ONA
H-UL
V CP
U (0
.74~
1.30
V)
3.3V
pow
er ra
il (of
f in
S4-S
5)
3.3V
swi
tche
d po
wer r
ail (
off i
n S3
-S5)
GM
CH/D
DR II
Pow
er S
ourc
e(of
f in
S4-S
5)P3
.3V_
AUX
1
0 1 1 1 1 1 10 0 0 1
0 0 0 00
1 1 1 11 1 1 1 1 1 1 11 1 1
0
0 0 1 0 1 10 0 1 1 1
0 0 0 1
0
0 00 0 0 0 0 0 0 00 0 0 - 0
1
SCHE
MAT
IC A
NNO
TATI
ONS
AND
BO
ARD
INFO
RMAT
ION
PCI D
evice
s
CPU
Core
Vol
tage
Tab
le
Volta
ge R
ails
VID4
Volta
geVI
D3VI
D2VI
D1VI
D0
0 0 1 01 1
0 01 1 0 1 0 1 0 10 1 0 1
0.94
0 V
0
0 1 0 0 0 1 1 11 1 1 0
0 0 0 1
10 0 1 1 1 1 1 10 0 0 1
1 1
1
0 0 0 0 0 0 0 00 0 0 - 0
0 1 0
1 0 0 1 0 1 10 0 1 1 1
0 0 0
1
1.67
6 V
1.51
6 V
1.66
0 V
1.59
6 V
1.58
0 V
1.56
4 V
1.54
8 V
1.50
0 V
1.48
4 V
1.46
8 V
1.64
4 V
1.62
8 V
1.61
2 V
1.53
2 V
VID4
Volta
ge
0 1 0 1 0 10 1 0 1 1
1.45
2 V
1.43
6 V
1.42
0 V
1.26
0 V
1
0 0 1 1 1
0 0 0 10 1 0 0 0 1 1
0 0 0 1 1 11 1 1 0
0 0 0 10
1
1 10 0 0 1
0 1 0 01 1 0 1 0 1
1 1 1 11 1 1 1 1
0 0 1 01 1
0.97
2 V
0.95
6 V
1.13
2 V
1.11
6 V
1.10
0 V
1.02
0 V
VID5
0 0 0 00 0 0 0 0
8-4
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
4 of
55
MD
C
MD
C
ON
BT
LAN
KB
C3_
PW
RO
N
LAN
CA
LIS
TOG
A
S5-
S4
SA
MS
UN
G
AU
X D
ISP
LAY
S3
(CH
P3_
SLP
S3*
)
LED
s
VC
CP
3_P
WR
GD
VD
C
P1.
5V
ON
KB
C3_
SU
SP
WR
P3.
3V
P1.
8V_L
AN
ON
US
BH
DD
C
PE
G
LCD
PC
MC
IAFAN
CIR
CU
IT
Ther
mal
Sen
sor
CA
LIS
TOG
AS
OD
IMM
(DD
R II
I)
CR
ES
TLIN
E
ICH
7-M
PE
G
ON
P5.
0V_A
LW
P12
.0V
_ALW
ON
M_P
CI
POW
ER D
IAG
RAM
CR
T
+V*A
(LW
S)
3
S0
+0.9
V
P1.
05V
ICH
7-M
P3.
3V_A
UX
ON
P5V
_AU
XP
5.0V
P0.
9V
AC
Ada
pter
CR
ES
TLIN
E
CR
ES
TLIN
E
CP
U_C
OR
E
4
MIC
OM
DIA
MO
ND
VIL
LE
ICH
8-M
M_P
CI
P1.
2V_L
AN
P3.
3V_M
ICO
M
MIC
OM
ON
P2.
5V
SAM
SUNG
PRO
PRIE
TARY
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
P2.
5V_L
AN
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
ICH
7-M
ON
ON
S3
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
MD
C
4
S4
S5
ICH
7-M
1
Bat
tery
DC
+1.8
V_A
UX
+V*A
UX
+V
DIA
MO
ND
VIL
LE
Sta
te
Rai
l
(CH
P3_
S4_
STA
TE*)
+V*
(CO
RE
)
Pow
er O
n/O
ff Ta
ble
by S
-sta
te
DD
R II
-Ter
min
atio
n
B
P1.
8V_A
UX
A
ELEC
TRO
NICS
LAN
DD
S0
ON
3
SP
I
C
2
A
2
SO
DIM
M
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
B
ON
1
ON
ICH
8-M
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
MIC
OM
Rev
0.1
+V*L
AN
8-5
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
5 of
55
3.3V
_AU
X
0.6
A (T
BD
)LA
N
1.05
V (V
CC
P)
3.3V
3.3V
_AU
X
DD
R-2
1.5
A (T
BD
)M
ini C
ard
X 2
1.5
A (T
BD
)5V
GM
CH
5V
0.2
A (T
BD
)
MIC
OM
3V
KB
C
0.01
A (T
BD
)K
BD
LE
D
SA
TA H
DD
0.16
A (T
BD
)
0.12
5 A
(TB
D)
3.3V
CLO
CK
3.79
A (T
BD
)
19V
(VD
C IN
V)
0.67
A (T
BD
)
1.25
V3.
3V
1.05
V (
TBD
A )
1.5V
( TB
D A
)
2.4A
(T
BD
)0.
374
A (T
BD
)
1.5V
MIC
OM
3V
PW
R L
ED
1.05
V
Ther
mal
3.3V
5V 5V_A
UX
Val
ue b
y D
atas
heet
/App
licat
ion
note
s(V
alue
by
mea
sure
men
t)
Dia
mon
dvill
e4.
5 A
(TB
D)
1.05
VIT
P
7.7
A (T
BD
)
Cal
isto
ga
220V
( 35
W )
1 A
(TB
D)
1.8V
_AU
X
( ~ 5
.0 W
)
LAN
(88E
8057
)
0.00
6 A
(TB
D)
0.01
5 A
(TB
D)
RTC_BatteryVGA CORE (TBD A)
2.43
A (T
BD
)0.
33 A
(TB
D)
P3.
3V_A
UX
P1.
2V_L
AN
ICH
7-M
4.48
A (T
BD
)
HD
Aud
io0.
07 A
(TB
D)
3.3V
SD
Car
d
2 A
(TB
D)
US
B (x
3)
0.20
9 A
(TB
D)
0.00
1 A
(TB
D)
C
1.05
V (V
CC
P)
1.05
V (M
CH
CO
RE
)
0.00
1 A
(TB
D)
41 A
(TB
D)
AB
0.13
A (T
BD
)
CP
U C
OR
E
SAM
SUNG
PRO
PRIE
TARY
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
1.5V
3.3V
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RSEX
CEPT
AS
AUTH
ORIZ
ED B
Y SA
MSUN
G.
0.9V
RTC
_Bat
tery
2 2SP
I3.
3V
0.9V
( TB
D A
)
MIC
OM
3V
( TB
D A
)
1.5V
3.1
A (T
BD
)
5.0V
( TB
D A
)
3.3V_AUX ( TBD A )
0.1
A (T
BD
)3.
3V_A
UX
Sen
sor
5V
1
0.5
A (T
BD
)0.
75A
(TB
D)
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
1.5V
0.08
A (T
BD
)
Rev.
0.6
(060
920)
0.22
A (T
BD
)5V
ELEC
TRO
NICS
FAN
5V
CP
U C
OR
E (
TBD
A )
1.25
V (
TBD
A )
Aud
io A
MP
0.06
A (T
BD
)
44
1.8V
_AU
X
1.13
A (T
BD
)
A
3
5V
0.25
A (T
BD
)
Ada
pter
Bat
tery
0.2
A (T
BD
)To
uch
Pad
(8 -
8.5
W )
( ~ 2
.0 W
)
3.3V
5V
POW
ER R
AILS
ANA
LYSI
S
3.3V
0.1
A (T
BD
)
PEX IO (TBD A)VDC INV ( TBD A )
0.08
A (T
BD
)
0.5
A (T
BD
)
P1.
8V/2
.5V
_LA
N
0.08
A (T
BD
)
3
3.3V
Key
Boa
rd
D
3.3V
( TB
D A
)
1.8V
_AU
X (
TBD
A )
D
C
3.3V
_AU
X
0.75
A (T
BD
)
B
3.3V
(LC
D 3
V)
LCD
SA
MS
UN
G
3.3V
0.1
A (T
BD
)
1
5.0V_AUX ( TBD A )
1.8V
( TB
D A
)
0.29
A (T
BD
)0.
15 A
(TB
D)
8-6
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
6 of
55
8-2)
P1.
8V_A
UX
5-1)
P5V
_AU
X
12-1
) CH
P3_
SLP
S5*
/S3*
14-2
) P3.
3V
15-2
) VC
CP
16-0
) VC
CP
_PW
RG
D
22-0
) PLT
3_R
ST*
17-1
) VC
C_C
OR
E
PAG
E 44
21-0
) CP
U1_
PW
RG
DC
PU
2-1)
P5_
ALW
S/W
14-1
) P3.
3V
Dev
ices
P1.5
V_AU
X &
VCCP
Mem
ory
4-0)
KB
C3_
SU
SP
WR
CH
IP
TPS
5112
0
2-0)
VD
C
P5V_
AUX
& P3
V_AU
X
11.1
V
SC
486
ICH
7-M
PAG
E 40
KB
C
4-2)
P1.
8V_P
2.5V
_LA
N
RTC
4-3)
P1.
2V_L
AN
Bat
tery
CP
U
CP
U
13-1
) ME
M_V
RE
F
GM
CH
MIC
5219
VR
M
15-1
) P2.
5V
1-1)
CH
P3_
RTC
RS
T4-
2) P
3.3_
AU
X
3-0) KBC3_CHKPWRSW*
Mon
itor
8-1)
P3.
3V_A
UX
4-0)
KB
C3_
SU
SP
WR
12-0
) KB
C3_
PW
RB
TN*
24-0
) A20
M#/
IGN
NE
#/IN
TR/N
MI
14-0
) KB
C3_
PW
RO
N
4-1)
P3.
3V_A
UX
13-1
) P0.
9V
5-1)
P3.
3V_A
UX
8-3)
P1.
5V
14-3
) P0.
9V
24-0
) A20
M#/
IGN
NE
#/IN
TR/N
MI
15-2
) VC
CP
23-0) CPU1_CPURST*
8-3)
P1.
8V_A
UX
26-0
) CP
U B
IST
15-1
) P2.
5V
PO
WE
R
14-2
) P1.
5V
MIN
I PC
IE
14-2
) P1.
5V
DD
R2
19-0
) VR
M3_
CP
U_P
WR
GD
CLO
CK
25-0
) IN
IT#
(1)
AU
DIO
VD
C
PAG
E 44
TPS
5112
0
2-1)
MIC
OM
_P3V
1-0)
PR
TC_B
AT
PAG
E 18
PAG
E 39
PAG
E 43
P5V_
AUX
& P3
V_AU
X
GIG
ABIT
TRA
NSFO
RMER
SC
415
15-0
) KB
C3_
VR
ON
PAG
E 41
19-0
) VR
M3_
CP
U_P
WR
GD
(2)
14-1
)P5V
PAG
E 40
14-0
) KB
C3_
PW
RO
N
PAG
E 44
LAN
_RE
SE
T* DDR2
PO
WER
20-0
) KB
C3_
CP
UP
WR
GD
_D
88E
8057
23-0
) KB
C3_
CP
UR
ST*
BC
P69
-16
SI3
433
LFE
9261
16-0
) VC
CP
_PW
RG
D
5-1)
P3.
3V_A
UX
AM
P
6-1)
P5V
_AU
X14
-2) P
3.3V
15-0
) KB
C3_
PW
RO
N
14-1
)P5V
15-0
) KB
C3_
PW
RO
N
15-1
) P2.
5V
Ther
mal
22-0
) PLT
3_R
ST*
18-0
) CLK
3_P
WR
GD
*
ELEC
TRO
NICS
Bat
tery
Mod
e
4-1)
P3.
3V_L
AN
22-0
) PLT
3_R
ST#
8-2)
P1.
8V_A
UX
C
14-3
) P0.
9V
3
23-0
) PLT
3_R
ST*
4
15-2
) VC
CP
D
14-2
) P1.
5V
B
21-0
) CP
U1_
PW
RG
DC
PU
18-0
) CLK
3_P
WR
GD
*EX
CEPT
AS
AUTH
ORIZ
ED B
Y SA
MSUN
G.
25-0
) IN
IT#
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
PAG
E 44
PAG
E 27
PAG
E 28
PAG
E 29
4
PAG
E 9
DPA
GE
6
B
PAG
E 26
SC
454
19-0
) VR
M3_
CP
U_P
WR
GD
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
15-2
) 1.5
V_P
WR
GD
SAM
SUNG
PRO
PRIE
TARY
13-1
) ME
M_V
RE
F
1
VR
MP
WR
GD
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
RC
IN*
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
+3m
s
1
SI3
433
2
15-0
) KB
C3_
VR
ON
2
HD
D
3
14-2
) P5.
0V
POW
ER S
EQUE
NCE
BLO
CK D
IAG
RAM
5-0)
AU
X5_
PW
RG
D
14-2
) P1.
5V
AA
SA
MS
UN
G
C
8-7
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
7 of
55
C
B
ELEC
TRO
NICS
D A
C
MIN
I PCI
E(W
LAN)
100
MHz
100
MHz
AU63
71
SA
MS
UN
G
RTC
Cloc
k
2
D
12 M
Hz
3
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
A
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
3
B
2
CLO
CK D
ISTR
IBUT
ION
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RSEX
CEPT
AS
AUTH
ORIZ
ED B
Y SA
MSUN
G.
441
SAM
SUNG
PRO
PRIE
TARY
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
CK-505M
CLK0
_HCL
K1#
CLK0
_HCL
K0#
133
MHz
1
CLK1
_DRE
FCLK
#96
MHz
CLK1
_PCI
EICH
CLK1
_DRE
FCLK
133
MHz
CLK3
_ICH
1432
.786
KHz
CLK1
_PCI
EICH
#
32.7
68KH
z
1205-002574
Page 6
RTC
Cloc
k
SMB3
_CLK
CLK3
_SM
BCLK CL
K1_P
CIEL
OM
CLK1
_DRE
FSSC
LK#
100
MHz
100
MHz
CLK3
_USB
48
CLK1
_PCI
ELO
M#
CLK1
_SAT
A10
0 M
Hz
MIN
I PCI
E(H
SDPA
)
CLK1
_SAT
A#
CLK1
_MIN
IPCI
E#CL
K1_M
INIP
CIE
CLK1
_MIN
3PCI
E#
CLK1
_MCH
3GPL
L
33 M
HzCL
K3_P
CLKI
CH14
.318
MHz
CLK1
_MIN
3PCI
E
CLK3
_PCL
KCB
33 M
HzCL
K3_P
CLKM
ICO
M
33 M
Hz
CLK3
_PCL
KMIN
533
MHz
CLK1
_MCL
K0/0
#
33 M
Hz
12.2
88 M
HzHD
A3_A
UD_B
CLK
KBC5
_TCL
K
CLK1
_MCL
K1/1
#
GM
CH
ICH
CARD
BUS
CPU
KBC
MIN
IPCI
TOUC
HPA
D
CONT
ROLL
ER
88E8
057
SODI
MM
CLOCK GENERATOR
AUDI
O C
ODE
C
KBC3
_SM
CLK
BATT
ERY
IDTCV179BNLG
CLK1
_MCH
3GPL
L#
133
MHz
CLK0
_HCL
K0
133
MHz
CLK0
_HCL
K1
CLK1
_DRE
FSSC
LK13
3 M
Hz
8-8
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
8 of
55
SAM
SUNG
PRO
PRIE
TARY
D
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RSEX
CEPT
AS
AUTH
ORIZ
ED B
Y SA
MSUN
G.
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
1
SA
MS
UN
G
2
ELEC
TRO
NICS
31
2
B
34
AB
A
C
D C
4
SMB3
_CLK
_S
SMB3_DATA_S
VRM
3_CP
U_PW
RGD
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
CLK3
_DBG
LPC
CLK3
_FM
48CL
K3_I
CH14
CLK3
_PCL
KICH
CLK3
_PCL
KMIC
OM
CLK3_USB48
CPU1
_BSE
L0CP
U1_B
SEL1
CPU1
_BSE
L2EX
P3_C
LKRE
Q#
LOM
3_CL
KREQ
#
MCH
1_BS
EL0
MCH
1_BS
EL1
MCH
1_BS
EL2
MCH
3_CL
KREQ
#M
IN3_
CLKR
EQ#
CLK1
_DRE
FCLK
CLK1
_DRE
FCLK
#CL
K1_D
REFS
SCLK
CLK1
_DRE
FSSC
LK#
CLK1
_MCH
3GPL
LCL
K1_M
CH3G
PLL#
CLK1
_MIN
I3PC
IECL
K1_M
INI3
PCIE
#CL
K1_M
INIP
CIE
CLK1
_MIN
IPCI
E#CL
K1_P
CIEI
CHCL
K1_P
CIEI
CH#
CLK1
_PCI
ELO
MCL
K1_P
CIEL
OM
#CL
K1_S
ATA
CLK1
_SAT
A#
CRT5_DDCCLKCRT5_DDCDATA
CRT5_HSYNCCRT5_VSYNC
CK_C
lock
_505
M_I
nt
CHP3
_CPU
STP#
CHP3
_PCI
STP#
CHP3
_SAT
ACLK
REQ
#
CLK0
_HCL
K0CL
K0_H
CLK0
#CL
K0_H
CLK1
CLK0
_HCL
K1#
CLK1_BSEL0CLK1_BSEL1CLK1_BSEL2
LPC3
_LFR
AME#
PCI3_CLKRUN#
PEX3
_WAK
E#PL
T3_R
ST#
THM
3_ST
P#VR
M3_
CPU_
PWRG
D
Gra
phics
_IF_
CRT
CRT3
_BLU
ECR
T3_D
DCCL
K
CRT3_DDCDATA
CRT3
_GRE
ENCR
T3_H
SYNC
CRT3
_RED
CRT3
_VSY
NC
KBC3_SMDATA#
KBC3
_SPK
MUT
E
KBC3
_SUS
PWR
KBC3
_THE
RM_S
MCL
K
KBC3_THERM_SMDATAKBC3_TX KB
C3_U
SBPW
RON#
KBC3
_VRO
NKB
C3_W
AKES
CI#
KBC5
_KSI
(0:7
)
KBC5
_KSO
(0:7
)KB
C5_K
SO(8
:15)
KBC5_TCLKKBC5_TDATA LI
D3_S
WIT
CH#
LPC3_LAD(0:3)
KBC3
_LED
_CHA
RGE#
KBC3
_LED
_PO
WER
#
KBC3_MD
KBC3
_NUM
LED#
KBC3
_PRE
CHG
KBC3
_PW
RBTN
#KB
C3_P
WRG
DKB
C3_P
WRO
N
KBC3
_PW
RSW
#
KBC3
_RFO
FF#
KBC3
_RSM
RST#
KBC3_RST#
KBC3
_RUN
SCI#
KBC3
_RX
KBC3
_SCL
ED#
KBC3_SMCLK#
CHP3
_SER
IRQ
CHP3
_SLP
S3#
CHP3
_SLP
S4#
CHP3
_SLP
S5#
CHP3
_SUS
STAT
#CL
K3_P
CLKM
ICO
M
KBC3
_A20
GKB
C3_B
KLTO
N
KBC3_BLCKPWRSW#
KBC3
_CAP
SLED
#KB
C3_C
HG20
00KB
C3_C
HGEN
KBC3_CHKPWRSW#
KBC3
_CPU
RST#
KBC3
_EXT
SMI#
KBC3
_LED
_ACI
N#
Ther
mal
_Sen
sor_
SMSC
_Em
c210
2
CPU1
_THR
MTR
IP#
CPU2_THERMDACPU2_THERMDC
CPU3_THRMTRIP#FAN3_FDBACK#
FAN5_VDD
KBC3
_PW
RGD
KBC3_THERM_SMCLKKBC3_THERM_SMDATA
THM
3_AL
ERT#
THM
3_ST
P#
MIC
OM
_Ren
esas
2110
_100
p
ADT3
_SEL
#BA
T3_D
ETEC
T#
CLK3
_FM
48MCD3_SDCD#MCD3_SDCLK
MCD3_SDCMDMCD3_SDDAT0MCD3_SDDAT1MCD3_SDDAT2MCD3_SDDAT3
MCD3_SDWP
PLT3
_RST
#
USB3_P1+USB3_P1-
CLK3
_FM
48CL
K3_I
CH14
CLK3
_PCL
KICH
CLK3
_PCL
KMIC
OM
CLK3_USB48
CPU1
_BSE
L0CP
U1_B
SEL1
CPU1
_BSE
L2EX
P3_C
LKRE
Q#
LOM
3_CL
KREQ
#
MCH
1_BS
EL0
MCH
1_BS
EL1
MCH
1_BS
EL2
MCH
3_CL
KREQ
#M
IN3_
CLKR
EQ#
SMB3
_CLK
_S
SMB3_DATA_S
VRM
3_CP
U_PW
RGD
SATA
_IF_
Conn
SAT1
_RXN
0SA
T1_R
XP0
SAT1
_TXN
0SA
T1_T
XP0
Mul
ti_M
V_Au
6371
PLT3
_RST
#TH
M3_
STP#
VRM
3_CP
U_PW
RGD
CHP3
_CPU
STP#
CHP3
_PCI
STP#
CHP3
_SAT
ACLK
REQ
#
CLK0
_HCL
K0CL
K0_H
CLK0
#CL
K0_H
CLK1
CLK0
_HCL
K1#
CLK1_BSEL0CLK1_BSEL1CLK1_BSEL2
CLK1
_DRE
FCLK
CLK1
_DRE
FCLK
#CL
K1_D
REFS
SCLK
CLK1
_DRE
FSSC
LK#
CLK1
_MCH
3GPL
LCL
K1_M
CH3G
PLL#
CLK1
_MIN
I3PC
IECL
K1_M
INI3
PCIE
#CL
K1_M
INIP
CIE
CLK1
_MIN
IPCI
E#CL
K1_P
CIEI
CHCL
K1_P
CIEI
CH#
CLK1
_PCI
ELO
MCL
K1_P
CIEL
OM
#CL
K1_S
ATA
CLK1
_SAT
A#CL
K3_D
BGLP
C
KBC3
_PW
RGD
KBC3
_PW
RON
KBC3
_PW
RSW
#
KBC3
_RFO
FF#
KBC3
_RSM
RST#
KBC3_RST#
KBC3
_RUN
SCI#
KBC3
_RX
KBC3
_SCL
ED#
KBC3_SMCLK#KBC3_SMDATA#
KBC3
_SPK
MUT
E
KBC3
_SUS
PWR
KBC3
_THE
RM_S
MCL
K
KBC3_THERM_SMDATAKBC3_TX
KBC3
_USB
PWRO
N#KB
C3_V
RON
KBC3
_WAK
ESCI
#
KBC5
_KSI
(0:7
)
KBC5
_KSO
(0:7
)KB
C5_K
SO(8
:15)
KBC5_TCLKKBC5_TDATA
LID3
_SW
ITCH
#
LPC3_LAD(0:3)
LPC3
_LFR
AME#
PCI3_CLKRUN#
PEX3
_WAK
E#
FAN3_FDBACK#FAN5_VDD
KBC3
_PW
RGD
KBC3_THERM_SMCLKKBC3_THERM_SMDATA
THM
3_AL
ERT#
THM
3_ST
P#
ADT3
_SEL
#BA
T3_D
ETEC
T#CH
P3_S
ERIR
Q
CHP3
_SLP
S3#
CHP3
_SLP
S4#
CHP3
_SLP
S5#
CHP3
_SUS
STAT
#CL
K3_P
CLKM
ICO
M
KBC3
_A20
GKB
C3_B
KLTO
N
KBC3_BLCKPWRSW#
KBC3
_CAP
SLED
#KB
C3_C
HG20
00KB
C3_C
HGEN
KBC3_CHKPWRSW#
KBC3
_CPU
RST#
KBC3
_EXT
SMI#
KBC3
_LED
_ACI
N#KB
C3_L
ED_C
HARG
E#KB
C3_L
ED_P
OW
ER#
KBC3_MD
KBC3
_NUM
LED#
KBC3
_PRE
CHG
KBC3
_PW
RBTN
#
CRT3
_BLU
ECR
T3_D
DCCL
KCRT3
_DDC
DATA
CRT3
_GRE
ENCR
T3_H
SYNC
CRT3
_RED
CRT3
_VSY
NC
CRT5
_DDC
CLK
CRT5
_DDC
DATA
CRT5
_HSY
NCCR
T5_V
SYNC
CLK3
_FM
48
MCD3_SDCD#MCD3_SDCLKMCD3_SDCMDMCD3_SDDAT0MCD3_SDDAT1MCD3_SDDAT2MCD3_SDDAT3MCD3_SDWP
PLT3
_RST
#
USB3_P1+USB3_P1-
SAT1
_RXN
0SA
T1_R
XP0
SAT1
_TXN
0SA
T1_T
XP0
CPU1
_THR
MTR
IP#
CPU2_THERMDACPU2_THERMDCCPU3_THRMTRIP#
8-9
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
9 of
55
IXO
C
SAM
SUNG
PRO
PRIE
TARY
4
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
C
3
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
B
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
2
SA
MS
UN
G
1
D
A
1
B
3
D
A
ELEC
TRO
NICS
2
4
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
SIM
3_C7
DATA
SMB3_CLKSMB3_DATA
USB3_P2+USB3_P2-
WLO
N_LE
D#
Min
i_PC
IE_C
onn
CLK1
_MIN
IPCI
ECL
K1_M
INIP
CIE#
KBC3
_RFO
FF#
MIN
3_CL
KREQ
#PE
X1_M
INIR
XN1
PEX1
_MIN
IRXP
1PE
X1_M
INIT
XN1
PEX1
_MIN
ITXP
1PL
T3_R
ST#
SIM
3_C1
VCC
SIM
3_C2
RST
SIM
3_C3
CLK
SIM
3_C4
DET
SIM
3_C6
VPP
KBC3
_RFO
FF#
PEX1
_MIN
RXN2
PEX1
_MIN
RXP2
PEX1
_MIN
TXN2
PEX1
_MIN
TXP2
PLT3
_RST
#SIM3_C1VCCSIM3_C2RSTSIM3_C3CLK
SIM
3_C4
DET
SIM3_C6VPPSIM3_C7DATA
SMB3_CLKSMB3_DATA
USB3_P6+USB3_P6-
1CL
K3_D
BGLP
C
2LP
C3_L
AD(0
)3
LPC3
_LAD
(1)
4LP
C3_L
AD(2
)5
LPC3
_LAD
(3)
6LP
C3_L
FRAM
E#
7PL
T3_R
ST#
PCIE
_HSD
PA
CLK1
_MIN
I3PC
IECL
K1_M
INI3
PCIE
#EX
P3_C
LKRE
Q#
MEM1_ADQS#(7:0)MEM1_ADQS(7:0)
MEM
1_AM
A(13
:0)
MEM1_ARAS#MEM1_AWE#MEM1_CKE0MEM1_CKE1MEM1_CS0#MEM1_CS1#MEM1_ODT0MEM1_ODT1
MEM
1_VR
EFSM
B3_C
LK_S
SMB3_DATA_S
Oth
er_D
ebug
_80
SPI3
_CS0
#
SPI3
_MIS
O
SPI3
_MO
SI
SODI
MM
_DDR
2
CLK1
_MCL
K0CL
K1_M
CLK0
#CL
K1_M
CLK1
CLK1
_MCL
K1#
MCH
3_EX
TTS0
#
MEM1_ABS0MEM1_ABS1MEM1_ABS2
MEM1_ACAS#MEM1_ADM(7:0)
MEM1_ADQ(63:0)
CHP3
_USB
PWRO
N#KB
C3_U
SBPW
RON#
USB3
_P0+
USB3
_P0-
USB3
_P4+
USB3
_P4-
USB3
_P5+
USB3
_P5-USB3_PWRON#
SPI_
BIO
S_RO
M_1
6Mbi
t
CHP3
_BIO
SWP#
SPI3
_CLK
KBC5
_TDA
TA3
T_L_
BUTT
ON#
4T_
R_BU
TTO
N#
MIO
_Swi
tchKB
C3_P
WRS
W#
LID_
Switc
h
1LI
D3_S
WIT
CH#
KBD_
IF_C
onn
KBC5
_KSI
(0:7
)1
KBC5
_KSO
(0:1
5)2
USB_
IF_C
onn
KBC3
_LED
_CHA
RGE#
KBC3
_LED
_PO
WER
#KB
C3_N
UMLE
D#KB
C3_S
CLED
#W
LON_
LED#
USB_
IF_D
evice
s
USB3_P3+USB3_P3-USB3_P7+USB3_P7-
Touc
hpad
_IF_
Conn1
KBC5
_TCL
K2
PLT3
_RST
#
SIM
3_C1
VCC
SIM
3_C2
RST
SIM
3_C3
CLK
SIM
3_C4
DET
SIM
3_C6
VPP
SIM
3_C7
DATA
SMB3_CLKSMB3_DATAUSB3_P2+USB3_P2-
WLO
N_LE
D#
LED_
Switc
h
CHP3
_SAT
ALED
#KB
C3_C
APSL
ED#
KBC3
_LED
_ACI
N#
MEM1_AWE#MEM1_CKE0MEM1_CKE1MEM1_CS0#MEM1_CS1#MEM1_ODT0MEM1_ODT1
MEM
1_VR
EFSM
B3_C
LK_S
SMB3_DATA_S
CLK1
_MIN
IPCI
ECL
K1_M
INIP
CIE#
KBC3
_RFO
FF#
MIN
3_CL
KREQ
#PE
X1_M
INIR
XN1
PEX1
_MIN
IRXP
1PE
X1_M
INIT
XN1
PEX1
_MIN
ITXP
1
SIM
3_C4
DET
SIM3_C6VPPSIM3_C7DATASMB3_CLKSMB3_DATAUSB3_P6+USB3_P6-
CLK1
_MCL
K0CL
K1_M
CLK0
#CL
K1_M
CLK1
CLK1
_MCL
K1#
MCH
3_EX
TTS0
#
MEM1_ABS0MEM1_ABS1MEM1_ABS2MEM1_ACAS#MEM1_ADM(7:0)MEM1_ADQ(63:0)MEM1_ADQS#(7:0)MEM1_ADQS(7:0)
MEM
1_AM
A(13
:0)
MEM1_ARAS#
USB3
_P5-
USB3_PWRON#
USB3_P3+USB3_P3-USB3_P7+USB3_P7-
KBC3
_PW
RSW
#
CLK1
_MIN
I3PC
IECL
K1_M
INI3
PCIE
#EX
P3_C
LKRE
Q#
KBC3
_RFO
FF#
PEX1
_MIN
RXN2
PEX1
_MIN
RXP2
PEX1
_MIN
TXN2
PEX1
_MIN
TXP2
PLT3
_RST
#
SIM3_C1VCCSIM3_C2RSTSIM3_C3CLK
KBC3
_NUM
LED#
KBC3
_SCL
ED#
WLO
N_LE
D#
LID3
_SW
ITCH
#
KBC5
_TCL
KKB
C5_T
DATA
T_L_
BUTT
ON#
T_R_
BUTT
ON#
SPI3
_MIS
O
CHP3
_USB
PWRO
N#KB
C3_U
SBPW
RON#
USB3
_P0+
USB3
_P0-
USB3
_P4+
USB3
_P4-
USB3
_P5+
KBC5
_KSI
(0:7
)KB
C5_K
SO(0
:15)
CHP3
_BIO
SWP#
SPI3
_CLK
SPI3
_CS0
#SP
I3_M
OSI
CLK3
_DBG
LPC
LPC3
_LAD
(0)
LPC3
_LAD
(1)
LPC3
_LAD
(2)
LPC3
_LAD
(3)
LPC3
_LFR
AME#
PLT3
_RST
#
CHP3
_SAT
ALED
#KB
C3_C
APSL
ED#
KBC3
_LED
_ACI
N#KB
C3_L
ED_C
HARG
E#KB
C3_L
ED_P
OW
ER#
8-10
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
10 o
f 55
DD
4 4
3 3
2 2
1 1
SAM
SUNG
PRO
PRIE
TARY
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.DO
NOT
DIS
CLOS
E TO
OR
DUPL
ICAT
E FO
R OT
HERS
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
SA
MS
UN
GEL
ECTR
ONI
CS
AA
BB
CC
KBC3
_PW
RON
KBC3
_VRO
NVC
CP3_
PWRG
D
KBC3
_CHG
2000
KBC3
_CHG
ENKB
C3_P
RECH
G
KBC3_SMCLK#KBC3_SMDATA#
PWR_
MV_
3V_5
V
AUX5
_PW
RGD
KBC3
_SUS
PWR
PWR_
Mem
ory
AUX5
_PW
RGD
CHP3
_SLP
S4#
KBC3
_PW
RON
MEM
1_VR
EF
PWR_
MV_
Cant
iga_
Int
AUX5
_PW
RGD
KBC3
_SUS
PWR
KBC3_SMDATA#KBC3_SMCLK#
KBC3
_PRE
CHG
KBC3
_CHG
ENKB
C3_C
HG20
00
BAT3_SMDATA#BAT3_SMCLK#
BAT3
_DET
ECT#
ADT3_SEL#
CHP3
_SLP
S4#
MEM
1_VR
EF
KBC3
_PW
RON
AUX5
_PW
RGD
VCCP
3_PW
RGD
KBC3
_VRO
NKB
C3_P
WRO
N
PWR_
MV_
Char
ger_
Isl6
256a
ADT3_SEL#
BAT3
_DET
ECT#
BAT3_SMCLK#BAT3_SMDATA#
8-11
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
11 o
f 55
HCLK
1 / 4
ADDR GROUP0 ADDR GROUP1
NC
CONTROL XDP/ITP SIGNALS THERM
2 / 4
DATA GRP0 DATA GRP1
DATA GRP2 DATA GRP3
MIS
C
D
4
of th
e Fi
rst E
XTBG
REF
with
Z0=
55
ohm
trac
e
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
Min
imize
cou
plin
g of
any
swi
tchi
ng s
igna
ls to
this
net
USE
PRO
CHO
T*
trace
sho
rter t
han
0.5"
to th
eir
ELEC
TRO
NICS
D
B
3
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
SA
MS
UN
G
1
2
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
B
1
DIAM
OND
VILL
E (N
270)
C
1
COM
P0/2
: St
riplin
e=14
mils
/ M
icros
trip=
18m
ilsCO
MP1
/3 :
Strip
line=
4mils
/ M
icros
trip=
5mils
of th
e Fi
rst G
TLRE
F0 w
ith Z
0= 5
5 oh
m tr
ace
4
D
B
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
resp
ectiv
e Ba
nias
soc
ket p
ins.
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
A
2
56oh
m --
> 68
ohm
C
A
COM
P0/2
(CO
MP1
/3) s
houl
d be
GTL
REF
: Kee
p th
e Vo
ltage
divi
der w
ithin
0.5
"
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
B
4
C
GTL
REF
: Kee
p th
e Vo
ltage
divi
der w
ithin
0.5
"
32
Min
imize
cou
plin
g of
any
swi
tchi
ng s
igna
ls to
this
net
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
of th
e Fi
rst C
MRE
F wi
th Z
0= 5
5 oh
m tr
ace
GTL
REF
: Kee
p th
e Vo
ltage
divi
der w
ithin
0.5
"
conn
ecte
d wi
th Z
o=27
.4oh
m(5
5ohm
)
Min
imize
cou
plin
g of
any
swi
tchi
ng s
igna
ls to
this
net
3
A
3
D
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
SAM
SUNG
PRO
PRIE
TARY
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
A
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
4SA
MSU
NG P
ROPR
IETA
RY1
C
2
54.9
R75
1%
11
51
30
45
SMI#
R16
STPC
LK#
M17
TCK
N16
TDI
M16
TDO
H17
THER
MTR
IP#
E4TH
RMDA
E5TH
RMDC
L17
TMS
W19
TRDY
#
K16
TRST
#
REQ
1#G
19RE
Q2#
P20
REQ
3#R1
9RE
Q4#
D15
RESE
T#W
18RS
0#Y1
7RS
1#U2
0RS
2#
A3RS
VD1
C1RS
VD2
C21
RSVD
3
U17
G6
NC2
H6NC
3K4
NC4
K5NC
5M
15NC
6L1
6NC
7
K18
PRDY
#J1
6PR
EQ#
G17
PRO
CHO
T#
N21
REQ
0#J2
1
DRDY
#
T16
FERR
#
AA17
HIT#
V20
HITM
#
F16
IERR
#
J4IG
NNE#
V16
INIT
#
T15
LINT
0R1
5LI
NT1
W20
LOCK
#
D6NC
1
BCLK
1
Y19
BNR#
K17
BPM
0#J1
8BP
M1#
H15
BPM
2#J1
5BP
M3#
U21
BPRI
#
T20
BR0#
V15
BR1#
Y18
DBSY
#
T21
DEFE
R#T1
9
R20
A6#
J19
A7#
N19
A8#
G20
A9#
V19
ADS#
K20
ADST
B0#
B19
ADST
B1#
D17
AP#0
M18
AP#1
V11
BCLK
0V1
2
A28#
B16
A29#
P21
A3#
B17
A30#
C16
A31#
A17
A32#
B14
A33#
B15
A34#
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8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
12 o
f 55
3 / 4
4 / 4
B
3
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1
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ISCL
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UNG.
AAC
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270)
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THIS
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T CO
NTAI
NS C
ONFI
DENT
IAL
1
D
1
poss
ible
to V
CCA
pins
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3
C
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
B
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
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NICS
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PT A
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8-13
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
13 o
f 55
1 / 5
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
with
in 2
0mil
Plac
e 10
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3
Layo
ut N
ote
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OSE
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R DU
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RS
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A
3
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
1
CALI
STO
GA
(945
GSE
)
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THIS
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UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
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CPU*
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H : L
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ode
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*V5
HD55
*AB
4
HD56
*AB
8
HD57
*W
8
HD58
*AA
9
HD59
*AA
8
HD6*
C2
HD60
*AB
1
HD32
*V8
HD33
*V9
HD34
*R6
HD35
*T8
HD36
*R2
HD37
*N5
HD38
*N2
HD39
*R5
HD4*
F7
HD40
*U7
HD41
*R8
HD42
*T4
HD43
*T7
HD44
*R3
HD45
*T5
HD46
*V6
HD18
*N1
HD19
*M
5
HD2*
H9
HD20
*K5
HD21
*J5
HD22
*H3
HD23
*J4
HD24
*N3
HD25
*M
4
HD26
*M
3
HD27
*N8
HD28
*N6
HD29
*K3
HD3*
H6
HD30
*N9
HD31
*M
1
HBNR
*B9
HBPR
I*C7
HBRE
Q0*
G8
HCLK
NAA
6
HCLK
PAA
5
HCPU
RST*
B10
HD0*
C4
HD1*
F6
HD10
*J7
HD11
*K7
HD12
*H8
HD13
*E5
HD14
*K8
HD15
*J8
HD16
*J2
HD17
*J3
HA26
*C1
4
HA27
*A1
7
HA28
*E1
5
HA29
*H1
7
HA3*
F8
HA30
*D1
7
HA31
*G
17
HA4*
D12
HA5*
C13
HA6*
A8
HA7*
E13
HA8*
E12
HA9*
J12
HADS
*F1
0
HADS
TB0*
C12
HADS
TB1*
H16
HA10
*B1
3
HA11
*A1
3
HA12
*G
13
HA13
*A1
2
HA14
*D1
4
HA15
*F1
4
HA16
*J1
3
HA17
*E1
7
HA18
*H1
5
HA19
*G
15
HA20
*G
14
HA21
*A1
5
HA22
*B1
8
HA23
*B1
5
HA24
*E1
4
HA25
*H1
3
45
0904
-002
420
945G
SEU5
05-1
5349
P1.0
5V
25
P1.0
5V
21
22 2824 2514
31
C127 10
V10
0nF
317-
C4
13 58 5917 60
1%
R111 10
0
0
7
1%
R110 20
0
56
20
38 43302
221
R121 1%
621
13
443 4
11
48 5424 2619 20 52
21 23
18
95
16912
100
R117 1%
1%R1
1424
.9
46 51
P1.0
5V
26
54.9
R96
1%8
2 4
1915
29
16
0 12 23 39 40
103
1%R1
1354
.9
475 28 63
3
18
37
24.9
R87
1%
7 27
3610 42
1%
R112 22
1
34 35
C151
100n
F10
V
55
174
P1.0
5V
11
6
22 32 33
10V
100n
FC1
25
41
1
146 27
1%100
R109
8
15 50
CLK0
_HCL
K1#
CLK0
_HCL
K1
CPU1
_ADS
#CP
U1_B
NR#
CPU1
_BPR
I#CP
U1_B
REQ
#
CPU1
_RS0
#CP
U1_R
S1#
CPU1
_RS2
#CP
U1_C
PURS
T#CP
U1_D
PWR#
CPU1
_HIT
M#
CPU1
_HIT
#
CPU1
_SLP
#
CPU1
_DEF
ER#
CPU1
_DBS
Y#
CPU1
_DRD
Y#
CPU1
_TRD
Y#CP
U1_L
OCK
#
MCH
1_HV
REF
MCH
1_HV
REF
CPU1
_A#(
31:3
)
CPU1
_REQ
#(4:
0)
MCH
1_HY
SWIN
G
CPU1
_DST
BP0#
CPU1
_DST
BN0#
CPU1
_DBI
0#
CPU1
_DST
BP1#
CPU1
_DST
BN1#
CPU1
_DBI
1#
CPU1
_DST
BP2#
CPU1
_DST
BN2#
CPU1
_DBI
2#
CPU1
_DST
BP3#
CPU1
_DST
BN3#
CPU1
_DBI
3#
CPU1
_ADS
TB0#
CPU1
_ADS
TB1#
MCH
1_HX
SWIN
G
MCH
1_HX
SWIN
G
MCH
1_HY
SWIN
GCP
U1_D
#(63
:0)
8-14
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
14 o
f 55
3 / 5
2 / 5
(def
. : d
efau
lt O
ptio
n)
D
CFG
#
VSS_
NCTF
ELEC
TRO
NICS
Inte
rnal
P.U
.
42
A
DMIx
4
SAM
SUNG
PRO
PRIE
TARY
CFG
(19)
3
43
Rese
rved
CFG
[0:2
] = B
SE
L[0:
2] =
"10
0"
DM
I Lan
e N
orm
al
C
MC
H_C
FG5
: LO
W=D
IMX
2
DM
Ix2
(def
ault)
Page
6
Low
SA
MS
UN
G
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
DMI L
ane
Reve
rsal
Curr
ent S
ettin
g
CFG
(6)
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
B
D
1
CFG
(5)
1
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
C
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
B
CALI
STO
GA
(945
GSE
)
High
HIG
H=D
IMX
4
A
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
2
594340
3
R650
24.9
7
1%
10K
61
10K
R139
10K
R161
0.5pF50V
R136
C5780.01nF
1%
R162
0
3
80.6
R558
13
54
351 50
50V 0.5pF 0.01nF C579
SB_M
A9AE
21
SB_R
AS*
AG21
SB_W
E*AG
20
00
44
SB_B
S1AJ
20
SB_B
S2AE
27
SB_C
AS*
AG19
SB_M
A0AN
20
SB_M
A1AL
21
SB_M
A10
AL20
SB_M
A11
AE22
SB_M
A12
AE26
SB_M
A13
AE20
SB_M
A2AK
21
SB_M
A3AK
22
SB_M
A4AL
22
SB_M
A5AH
22
SB_M
A6AG
22
SB_M
A7AF
21
SB_M
A8AM
21
SA_M
A11
AL18
SA_M
A12
AG18
SA_M
A13
AL14
SA_M
A2AM
15
SA_M
A3AH
15
SA_M
A4AK
15
SA_M
A5AN
15
SA_M
A6AJ
18
SA_M
A7AF
19
SA_M
A8AN
17
SA_M
A9AL
17
SA_R
AS*
AK18
SA_R
CVEN
IN*
AN28
SA_R
CVEN
OUT
*AM
28
SA_W
E*AH
17
SB_B
S0AH
21
SA_D
QS1
*AK
30
SA_D
QS2
AK33
SA_D
QS2
*AJ
33
SA_D
QS3
AL25
SA_D
QS3
*AM
25
SA_D
QS4
AN9
SA_D
QS4
*AN
8
SA_D
QS5
AH8
SA_D
QS5
*AJ
8
SA_D
QS6
AM2
SA_D
QS6
*AM
3
SA_D
QS7
AE3
SA_D
QS7
*AE
2
SA_M
A0AJ
15
SA_M
A1AM
17
SA_M
A10
AG16
SA_D
Q55
AJ2
SA_D
Q56
AG2
SA_D
Q57
AF3
SA_D
Q58
AE7
SA_D
Q59
AF6
SA_D
Q6
AB31
SA_D
Q60
AH5
SA_D
Q61
AG3
SA_D
Q62
AG5
SA_D
Q63
AF5
SA_D
Q7
AE31
SA_D
Q8
AH31
SA_D
Q9
AK31
SA_D
QS0
AC28
SA_D
QS0
*AC
29
SA_D
QS1
AJ30
SA_D
Q40
AG9
SA_D
Q41
AF9
SA_D
Q42
AF8
SA_D
Q43
AK6
SA_D
Q44
AF7
SA_D
Q45
AG11
SA_D
Q46
AJ6
SA_D
Q47
AH6
SA_D
Q48
AN6
SA_D
Q49
AM6
SA_D
Q5
AB32
SA_D
Q50
AK3
SA_D
Q51
AL2
SA_D
Q52
AM5
SA_D
Q53
AL5
SA_D
Q54
AJ3
SA_D
Q26
AJ26
SA_D
Q27
AJ25
SA_D
Q28
AL27
SA_D
Q29
AN26
SA_D
Q3
AF32
SA_D
Q30
AH25
SA_D
Q31
AG26
SA_D
Q32
AM12
SA_D
Q33
AL11
SA_D
Q34
AH9
SA_D
Q35
AK9
SA_D
Q36
AM11
SA_D
Q37
AK11
SA_D
Q38
AM8
SA_D
Q39
AK8
SA_D
Q4
AC33
SA_D
Q11
AK27
SA_D
Q12
AH30
SA_D
Q13
AL32
SA_D
Q14
AJ28
SA_D
Q15
AJ27
SA_D
Q16
AH32
SA_D
Q17
AF31
SA_D
Q18
AH27
SA_D
Q19
AF28
SA_D
Q2
AE33
SA_D
Q20
AJ32
SA_D
Q21
AG31
SA_D
Q22
AG28
SA_D
Q23
AG27
SA_D
Q24
AN27
SA_D
Q25
AM26
RSVD
_42
F18
SA_B
S0AK
12
SA_B
S1AH
11
SA_B
S2AG
17
SA_C
AS*
AJ17
SA_D
M0
AB30
SA_D
M1
AL31
SA_D
M2
AF30
SA_D
M3
AK26
SA_D
M4
AL9
SA_D
M5
AG7
SA_D
M6
AK5
SA_D
M7
AH3
SA_D
Q0
AC31
SA_D
Q1
AB28
SA_D
Q10
AL28
RSVD
_26
Y24
RSVD
_27
AB22
RSVD
_28
AB21
RSVD
_29
AB19
RSVD
_30
AB16
RSVD
_31
AB14
RSVD
_32
AA12
RSVD
_33
W24
RSVD
_34
AA24
RSVD
_35
AB24
RSVD
_36
AB20
RSVD
_37
AB18
RSVD
_38
AB15
RSVD
_39
AB13
RSVD
_40
AB12
RSVD
_41
AB17
0904
-002
420
945G
SEU5
05-3
RSVD
_20
K15
RSVD
_21
K21
K19
RSVD
_22
RSVD
_23
K20
RSVD
_24
K24
RSVD
_25
Y25
634
2
1%15
0
0.01nF C577
5748
R573
50V 0.5pF
418 12
R574
150
1%
P3.3
V
54
13
28 332118 4532 34206
512
60
57
P3.3
V
49
100
R163
51
0
17 30
1%
100n
FC6
0210
V10
0nF
C130
10V
24
P1.8
V_AU
X
1 11
2.2K
R119
7
0
60
31
6
P3.3
V
P1.5
V
P1.5
V
10
623772
4
80.6
R559
1%
9 39
12
1%R1
5640
.2
14
1%R1
5740
.2
6 3
25
7
TV_I
RTNB
C21
TV_I
RTNC
D21
523 15
SM_C
LK3*
AN30
SM_C
S0*
AG14
SM_C
S1*
AF12
SM_C
S2*
AK14
SM_C
S3*
AH12
SM_O
DT0
AE12
SM_O
DT1
AF14
SM_O
DT2
AJ14
SM_O
DT3
AJ12
TVDA
CA_O
UTA2
1
TVDA
CB_O
UTC2
0
TVDA
CC_O
UTE2
0
TV_D
CONS
EL0
G26
TV_D
CONS
EL1
J26
TV_I
REF_
REFS
ETG
23
TV_I
RTNA
B21
SMO
CDCO
MP1
AF11
SMRC
OM
PNAN
12
SMRC
OM
PPAN
14
SMVR
EF0
AA33
SMVR
EF1
AE1
SM_C
KE0
AN21
SM_C
KE1
AN22
SM_C
KE2
AF26
SM_C
KE3
AF25
SM_C
LK0
AF33
SM_C
LK0*
AG33
SM_C
LK1
AG1
SM_C
LK1*
AF1
SM_C
LK2
AJ1
SM_C
LK2*
AK1
SM_C
LK3
AM30
SDVO
B_BL
UE*
P32
SDVO
B_CL
KNT3
2
SDVO
B_CL
KPR3
2
SDVO
B_G
REEN
M32
SDVO
B_G
REEN
*N3
2
SDVO
B_IN
TP3
0
SDVO
B_IN
T*R3
0
SDVO
B_RE
DN2
8
SDVO
B_RE
D*P2
8
SDVO
_CTR
LCLK
J27
SDVO
_CTR
LDAT
AH2
7
SDVO
_FLD
STAL
LT3
0
SDVO
_FLD
STAL
L*T2
9
SDVO
_TVC
LKIN
M30
SDVO
_TVC
LKIN
*N3
0
SMO
CDCO
MP0
AJ21
RSVD
_13
K22
RSVD
_14
J17
RSVD
_15
K23
RSVD
_16
K17
RSVD
_17
K12
RSVD
_18
K13
RSVD
_19
K16
RSVD
_2K2
6
RSVD
_3K3
2
RSVD
_4K3
1
RSVD
_5R2
4
RSVD
_6T2
4
RSVD
_7M
10
RSVD
_8A1
8
RSVD
_9AB
10
SDVO
B_BL
UEP3
3
L_CT
LB_D
ATA
E28
L_IB
GK2
7
L_VB
GJ2
9
L_VD
DEN
K30
L_VR
EFH
J30
L_VR
EFL
K29
PM_B
MBU
SY*
G21
PM_E
XTTS
*_0
F26
PM_E
XTTS
*_1
H26
PM_T
HRM
TRIP
*J1
5
PWRO
KAB
29RS
TIN*
W27
RSVD
_1K2
5
RSVD
_10
AA10
RSVD
_11
C17
RSVD
_12
A33
LA_D
ATAP
0H3
1
LA_D
ATAP
1G
32
LA_D
ATAP
2C3
1
LB_C
LKN
A30
LB_C
LKP
A29
LB_D
ATAN
_0F3
3
LB_D
ATAN
_1D3
3
LB_D
ATAN
_2F3
0
LB_D
ATAP
_0E3
3
LB_D
ATAP
_1D3
2
LB_D
ATAP
_2F2
9
LDDC
_CLK
G28
LDDC
_DAT
AH2
8
L_BK
LTCR
TLH3
0
L_BK
LTEN
G29
L_CT
LA_C
LKF2
8
DMI_
TXP0
V29
DMI_
TXP1
V32
DREF
_CLK
NA2
7
DREF
_CLK
PA2
6
DREF
_SSC
LKN
J33
DREF
_SSC
LKP
H33
EXP_
ACO
MPI
R28
EXP_
AICO
MPO
M28
GCL
KNY2
6
GCL
KPAA
26
ICHS
YNC*
E31
LA_C
LKN
D30
LA_C
LKP
C30
LA_D
ATAN
0G
31
LA_D
ATAN
1F3
2
LA_D
ATAN
2D3
1
CRT_
BLUE
*A2
3
CRT_
DDCC
LKH2
0
CRT_
DDCD
ATA
H22
CRT_
GRE
ENE2
5
CRT_
GRE
EN*
F25
CRT_
HSYN
CD2
7
CRT_
IREF
H25
CRT_
RED
C25
CRT_
RED*
D25
CRT_
VSYN
CF2
7
DMI_
RXN0
Y29
DMI_
RXN1
Y32
DMI_
RXP0
Y28
DMI_
RXP1
Y31
DMI_
TXN0
V28
DMI_
TXN1
V31
0904
-002
420
945G
SEU5
05-2
CFG
0C1
8
CFG
1E1
8
CFG
19K2
8
CFG
2G
20
CFG
3G
18
CFG
5J2
0
CFG
6J1
8
CLKR
EQ*
J22
CRT_
BLUE
A24
R137
1.5K
3
23
1%
38 4229 47
4
115
R120
2.2K
2 862
55
R160
249
1%
27
5
16
2.2K
R122
1% nost
uff
1KR1
38
26 36
4
5853 564610
KR1
58R1
5910
K
1 9
MEM
1_VR
EF
150
R572
1%
19
1
22
MCH
3_EX
TTS1
#
MCH
3_CL
KREQ
#
MCH
3_EX
TTS0
#
MCH
3_EX
TTS1
#CH
P3_D
PRSL
PVR
MCH
3_EX
TTS1
#
CRT3
_BLU
ECR
T3_G
REEN
CRT3
_RED
10
MCH
3_LC
D_ED
ID_C
MCH
3_LC
D_ED
ID_D
MEM
1_AM
A(13
:0)
CRT3
_HSY
NCCR
T3_V
SYNC
MEM
1_AB
S0M
EM1_
ABS1
MEM
1_AB
S2
MEM
1_AR
AS#
MEM
1_AC
AS#
MEM
1_AW
E#
MEM
1_AD
QS#
(7:0
)
MEM
1_AD
QS(
7:0)
MEM
1_AD
M(7
:0)
MEM
1_AD
Q(6
3:0)
LCD3
_BRI
T
LCD1
_ADA
TA2
MEM
1_CK
E1
MEM
1_CS
1#
MEM
1_O
DT1
KBC3
_PW
RGD
MCH
3_BM
BUSY
#CP
U1_T
HRM
TRIP
#M
CH3_
EXTT
S0#
MCH
1_BS
EL0
MCH
1_BS
EL1
MCH
1_BS
EL2
MCH
3_IC
HSYN
C#M
CH3_
CLKR
EQ#
MEM
1_O
DT0
CRT3
_DDC
DATA
PLT3
_RST
#
MCH
3_LC
D_VD
DEN
MCH
3_LC
D_BK
LTEN
LCD1
_ACL
K#LC
D1_A
CLK
LCD1
_ADA
TA0#
LCD1
_ADA
TA0
LCD1
_ADA
TA1#
LCD1
_ADA
TA1
LCD1
_ADA
TA2#
DMI1
_RXP
0DM
I1_R
XP1
CLK1
_DRE
FCLK
#CL
K1_D
REFC
LKCL
K1_D
REFS
SCLK
#CL
K1_D
REFS
SCLK
CLK1
_MCH
3GPL
L#CL
K1_M
CH3G
PLL
CLK1
_MCL
K0CL
K1_M
CLK0
#CL
K1_M
CLK1
CLK1
_MCL
K1#
MEM
1_CK
E0
MEM
1_CS
0#
CRT3
_DDC
CLK
DMI1
_TXN
0DM
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XN1
DMI1
_TXP
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I1_T
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8-15
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
15 o
f 55
4 / 5
D
SA
MS
UN
G
23
12
C
B
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
3
B
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
SAM
SUNG
PRO
PRIE
TARY
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
D
4
C
CALI
STO
GA
(945
GSE
)SA
MSUN
G EL
ECTR
ONIC
S CO
’S P
ROPE
RTY.
A
THIS
DOC
UMEN
T CO
NTAI
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T_11
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T_12
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T_13
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T_14
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VTT_
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VTT_
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VTT_
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VTT_
19
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T_21
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VSS_
NCTF
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VSS_
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VSS_
NCTF
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AA13
VSS_
NCTF
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TF_1
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VSS_
NCTF
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TF_3
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VSS_
NCTF
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S_NC
TF_5
AA21
VSS_
NCTF
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S_NC
TF_7
VCC_
2
VCC_
20V1
5
VCC_
21U1
5
VCC_
22T1
5
VCC_
3P2
6
VCC_
4N2
6
VCC_
5M
26
VCC_
6V1
9
VCC_
7U1
9
VCC_
8T1
9
VCC_
9W
18 J23
VCC_
SYNC
M33
VSSA
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B25
VSSA
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DAC
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VCC_
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VCC_
11T1
8
VCC_
12R1
8
VCC_
13W
17
VCC_
14U1
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VCC_
15R1
7
VCC_
16W
16
VCC_
17V1
6
VCC_
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M_3
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M_3
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VCCS
M_3
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CSM
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VCCS
M_3
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CSM
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AM29
VCCS
M_1
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AN24
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M_1
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VCCS
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CSM
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M_1
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M_2
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VCCS
M_2
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CSM
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AN16
VCCS
M_2
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CSM
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VCCS
M_2
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ACA_
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CA_T
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NC_9
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8-16
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
16 o
f 55
5 / 5
1
SAM
SUNG
PRO
PRIE
TARY
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
SA
MS
UN
GEL
ECTR
ONI
CS
A
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
A
BB
CC
DD
4 4
3 3CALI
STO
GA
(945
GSE
)
2 2
1
P1.0
5VP1
.5V
P1.5
V
P1.0
5V
10V
10%
AK20
VSS_
93AH
20
VSS_
94AF
20D2
0VS
S_95
VSS_
96W
19
VSS_
97R1
9
VSS_
98AM
18
VSS_
99AH
18
VTT_
NCTF
_1T1
0
VTT_
NCTF
_2R1
0
VTT_
NCTF
_3P1
0
VTT_
NCTF
_4N1
0
VTT_
NCTF
_5L1
0
VTT_
NCTF
_6D1
C129
100n
FG
25
VSS_
79A2
5
VSS_
8AE
32
H23
VSS_
80VS
S_81
F23
VSS_
82B2
3
VSS_
83AM
22
VSS_
84AJ
22
VSS_
85AF
22
VSS_
86G
22
VSS_
87E2
2
VSS_
88J2
1
VSS_
89H2
1
VSS_
9AC
32
VSS_
90F2
1
VSS_
91AM
20
VSS_
92
N27
VSS_
64M
27
VSS_
65G
27 E27
VSS_
66VS
S_67
C27
VSS_
68B2
7
VSS_
69AL
26
VSS_
7AG
32
VSS_
70AH
26
VSS_
71W
26
VSS_
72U2
6
VSS_
73AN
25
VSS_
74AK
25
VSS_
75AG
25
VSS_
76AE
25
VSS_
77J2
5
VSS_
78
AA28
VSS_
5G
33
VSS_
50U2
8T2
8VS
S_51
VSS_
52J2
8
VSS_
53D2
8
VSS_
54AM
27
VSS_
55AF
27
VSS_
56AB
27
VSS_
57AA
27
VSS_
58Y2
7
VSS_
59U2
7
VSS_
6AK
32
VSS_
60T2
7
VSS_
61R2
7
VSS_
62P2
7
VSS_
63
G30
VSS_
35E3
0
VSS_
36B3
0AA
29VS
S_37
VSS_
38U2
9
VSS_
39R2
9
VSS_
4R3
3
VSS_
40P2
9
VSS_
41N2
9
VSS_
42M
29
VSS_
43H2
9
VSS_
44E2
9
VSS_
45B2
9
VSS_
46AK
28
VSS_
47AH
28
VSS_
48AE
28
VSS_
49
Y33
VSS_
20R3
1
VSS_
21P3
1N3
1VS
S_22
VSS_
23M
31
VSS_
24J3
1
VSS_
25F3
1
VSS_
26AL
30
VSS_
27AG
30
VSS_
28AE
30
VSS_
29AC
30
VSS_
3V3
3
VSS_
30AA
30
VSS_
31Y3
0
VSS_
32V3
0
VSS_
33U3
0
VSS_
34
AD3
VSS_
173
W3
VSS_
174
T3 B3VS
S_17
5VS
S_17
6AK
2
VSS_
177
AH2
VSS_
178
AF2
VSS_
179
AB2
VSS_
18U3
1
VSS_
180
M2
VSS_
181
K2
VSS_
182
H2
VSS_
183
F2
VSS_
184
V1
VSS_
185
R1
VSS_
19T3
1
VSS_
2
T6
VSS_
159
M6
VSS_
16AJ
31
K6VS
S_16
0VS
S_16
1AN
5
VSS_
162
AJ5
VSS_
163
B5
VSS_
164
AA4
VSS_
165
V4
VSS_
166
R4
VSS_
167
N4
VSS_
168
K4
VSS_
169
H4
VSS_
17AA
31
VSS_
170
E4
VSS_
171
AL3
VSS_
172
AG8
VSS_
144
AE8
VSS_
145
U8 AA7
VSS_
146
VSS_
147
V7
VSS_
148
R7
VSS_
149
N7
VSS_
15AM
31
VSS_
150
H7
VSS_
151
E7
VSS_
152
B7
VSS_
153
AL6
VSS_
154
AG6
VSS_
155
AE6
VSS_
156
AB6
VSS_
157
W6
VSS_
158
AN11
VSS_
13E3
2
VSS_
130
AJ11
AE11
VSS_
131
VSS_
132
AM9
VSS_
133
AJ9
VSS_
134
AB9
VSS_
135
W9
VSS_
136
R9
VSS_
137
M9
VSS_
138
J9
VSS_
139
F9
VSS_
14C3
2
VSS_
140
C9
VSS_
141
A9
VSS_
142
AL8
VSS_
143
W15
VSS_
115
R15
VSS_
116
F15
D15
VSS_
117
VSS_
118
AM14
VSS_
119
AH14
VSS_
12H3
2
VSS_
120
AE14
VSS_
121
H14
VSS_
122
B14
VSS_
123
F13
VSS_
124
D13
VSS_
125
AL12
VSS_
126
AG12
VSS_
127
H12
VSS_
128
B12
VSS_
129
AA32
VSS_
100
AF18
VSS_
101
U18
H18
VSS_
102
VSS_
103
D18
VSS_
104
AK17
VSS_
105
V17
VSS_
106
T17
VSS_
107
F17
VSS_
108
B17
VSS_
109
AH16
VSS_
11U3
2
VSS_
110
U16
VSS_
111
J16
VSS_
112
AL15
VSS_
113
AG15
VSS_
114
N15
VCC_
NCTF
_55
M15
VCC_
NCTF
_56
Y14
W14
VCC_
NCTF
_57
VCC_
NCTF
_58
V14
VCC_
NCTF
_59
U14
VCC_
NCTF
_6P2
4
VCC_
NCTF
_60
T14
VCC_
NCTF
_61
R14
VCC_
NCTF
_62
P14
VCC_
NCTF
_63
N14
VCC_
NCTF
_64
M14
VCC_
NCTF
_7N2
4
VCC_
NCTF
_8M
24
VCC_
NCTF
_9Y2
2
VSS_
1AH
33
VSS_
10
N25
VCC_
NCTF
_40
Y18
VCC_
NCTF
_41
P18
N18
VCC_
NCTF
_42
VCC_
NCTF
_43
M18
VCC_
NCTF
_44
Y17
VCC_
NCTF
_45
P17
VCC_
NCTF
_46
N17
VCC_
NCTF
_47
M17
VCC_
NCTF
_48
Y16
VCC_
NCTF
_49
P16
VCC_
NCTF
_5M
25
VCC_
NCTF
_50
N16
VCC_
NCTF
_51
M16
VCC_
NCTF
_52
Y15
VCC_
NCTF
_53
P15
VCC_
NCTF
_54
N21
VCC_
NCTF
_26
M21
VCC_
NCTF
_27
Y20
W20
VCC_
NCTF
_28
VCC_
NCTF
_29
V20
VCC_
NCTF
_3P2
5
VCC_
NCTF
_30
U20
VCC_
NCTF
_31
T20
VCC_
NCTF
_32
R20
VCC_
NCTF
_33
P20
VCC_
NCTF
_34
N20
VCC_
NCTF
_35
M20
VCC_
NCTF
_36
Y19
VCC_
NCTF
_37
P19
VCC_
NCTF
_38
N19
VCC_
NCTF
_39
M19
VCC_
NCTF
_4
W22
VCC_
NCTF
_11
V22
VCC_
NCTF
_12
U22
T22
VCC_
NCTF
_13
VCC_
NCTF
_14
R22
VCC_
NCTF
_15
P22
VCC_
NCTF
_16
N22
VCC_
NCTF
_17
M22
VCC_
NCTF
_18
Y21
VCC_
NCTF
_19
W21
VCC_
NCTF
_2R2
5
VCC_
NCTF
_20
V21
VCC_
NCTF
_21
U21
VCC_
NCTF
_22
T21
VCC_
NCTF
_23
R21
VCC_
NCTF
_24
P21
VCC_
NCTF
_25
U12
VCCA
UX_N
CTF_
31T1
2
VCCA
UX_N
CTF_
32R1
2P1
2VC
CAUX
_NCT
F_33
VCCA
UX_N
CTF_
34N1
2
VCCA
UX_N
CTF_
35M
12
VCCA
UX_N
CTF_
36AD
11
VCCA
UX_N
CTF_
37AD
10
VCCA
UX_N
CTF_
38K1
0
VCCA
UX_N
CTF_
4AD
24
VCCA
UX_N
CTF_
5AC
24
VCCA
UX_N
CTF_
6AD
22
VCCA
UX_N
CTF_
7AD
21
VCCA
UX_N
CTF_
8AD
20
VCCA
UX_N
CTF_
9AD
19
VCC_
NCTF
_1T2
5
VCC_
NCTF
_10
AD13
VCCA
UX_N
CTF_
17Y1
3
VCCA
UX_N
CTF_
18W
13 V13
VCCA
UX_N
CTF_
19
VCCA
UX_N
CTF_
2AC
25
VCCA
UX_N
CTF_
20U1
3
VCCA
UX_N
CTF_
21T1
3
VCCA
UX_N
CTF_
22R1
3
VCCA
UX_N
CTF_
23P1
3
VCCA
UX_N
CTF_
24N1
3
VCCA
UX_N
CTF_
25M
13
VCCA
UX_N
CTF_
26AD
12
VCCA
UX_N
CTF_
27Y1
2
VCCA
UX_N
CTF_
28W
12
VCCA
UX_N
CTF_
29V1
2
VCCA
UX_N
CTF_
3AB
25
VCCA
UX_N
CTF_
30
AD7
VCCA
UX_2
8AD
6
VCCA
UX_3
AD31
AD30
VCCA
UX_4
VCCA
UX_5
AD29
VCCA
UX_6
AD28
VCCA
UX_7
AD27
VCCA
UX_8
AC27
VCCA
UX_9
AD26
VCCA
UX_N
CTF_
1AD
25
VCCA
UX_N
CTF_
10AD
18
VCCA
UX_N
CTF_
11AD
17
VCCA
UX_N
CTF_
12AD
16
VCCA
UX_N
CTF_
13AD
15
VCCA
UX_N
CTF_
14AD
14
VCCA
UX_N
CTF_
15K1
4
VCCA
UX_N
CTF_
16
AE19
VCCA
UX_1
3AE
18
VCCA
UX_1
4AF
17AE
17VC
CAUX
_15
VCCA
UX_1
6AF
16
VCCA
UX_1
7AE
16
VCCA
UX_1
8AF
15
VCCA
UX_1
9AE
15
VCCA
UX_2
AD32
VCCA
UX_2
0J1
4
VCCA
UX_2
1J1
0
VCCA
UX_2
2H1
0
VCCA
UX_2
3AE
9
VCCA
UX_2
4AD
9
VCCA
UX_2
5U9
VCCA
UX_2
6AD
8
VCCA
UX_2
7
U505
-594
5GSE
0904
-002
420
VCCA
UX_1
AD33
VCCA
UX_1
0AC
26
VCCA
UX_1
1AB
26
VCCA
UX_1
2
8-17
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
17 o
f 55
1 / 5
BA39
-005
34A
Plac
e ne
ar to
the
ICH7
A
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
C
SAM
SUNG
PRO
PRIE
TARY
(Vcc
Sus1
_05
: NC)
STUF
F1
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
ELEC
TRO
NICS
Disa
ble
NO_S
TUFF
D
to p
lace
d wi
thin
2" o
f ICH
7-M
RTC
Batte
ry
PU
D
Pull d
own
RESE
T
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
56.2
ohm
mus
t be
plac
ed
2 2
B
NO_S
TUFF
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
ACZ_
SYNC
x1 /
x2 D
ocki
ng
1
C
Pull u
p
QK6
5
BA39
-005
98A
(New
)
3
B
ARRO
UND
WIB
RO D
OO
RPL
ACE
TO B
OTT
OM
to p
lace
d wi
thin
2" o
f 27.
4ohm
w/o
stu
b
*Lay
out N
ote
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
CMO
S
0
PORT
X L
ine
1
1x2
/ 2x1
Enab
le
A
3
27.4
ohm
resis
tor n
eeds
STUF
F
4
B0 S
tepp
ing
:
4x1
SA
MS
UN
G
ICH7
-M
4
Inte
rnal
VR
Stra
p
PDR6
6033
5%
P3.3
V
4.7K
R586
1000
nFC2
48
C183
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3
335%
R663
23
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ICO
M
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2768
MHz
14
23
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C184
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V
C186
10nF
R659
335%
R575
1M
nost
uff
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R196
1%
R662
335%
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43
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uff
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1
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SATA
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SATA
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SATA
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SATA
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LED*
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CLK
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23
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1
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D
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INTR
UDER
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16
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AC4
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DD14
AH14
DD15
AC15
DD2
AG13
DD3
AF13
DD4
AD14
DD5
AC13
DD6
AD12
DD7
AC12
DD8
AE12
DD9
AF12
DDAC
K*AF
16
DDRE
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15
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R*AF
15
DIO
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SW
1
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IN
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R6
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LP*
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AB13
DD11
AC14
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AF14
DD13
ICH1
-182
801G
BM
0904
-002
053
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ATE
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A20M
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28
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CLK
U1
ACZ_
RST*
R5
ACZ_
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0
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nF-X
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30
5%1MR628
0 2
CHP3
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#
CPU1
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M#
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G
CLK1
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ACL
K1_S
ATA#
SAT1
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T1_T
XP0
SAT1
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0SA
T1_R
XN0
HDA3
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0
CPU1
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RCP
U1_I
NIT#
CPU1
_IG
NNE#
CPU1
_PW
RGDC
PU
CHP3
_RTC
RST#
KBC3
_CPU
RST#
CPU1
_NM
I
LPC3
_LFR
AME#
CPU1
_SM
I#
CPU1
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R#
LPC3
_LAD
(3:0
)
CPU1
_THR
MTR
IP#
CHP3
_RTC
RST#
CPU1
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#
HDA3
_AUD
_SDO
HDA3
_AUD
_RST
#
HDA3
_AUD
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KHD
A3_A
UD_S
YNC
CPU1
_DPS
LP#
CPU1
_DPR
STP#
CPU1
_STP
CLK#
8-18
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
18 o
f 55
3 / 5
2 / 5
SPI
GNT
5*
B
ELEC
TRO
NICS
3
3-in
-1
BLUE
TOO
TH
512M
B
Defa
ult :
LPC
Boo
t
D
USB
4 : P
ORT
#2
LPC
MIN
I-CAR
D(W
irele
ss)
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
Inte
rnal
lly A
NDed
with
the
PWRO
K in
put
1
Resis
tor f
or T
est :
Pla
ce S
tuffi
ng O
ptio
n to
min
imize
stu
bs
4
2
GIG
ABIT
LAN
(0 :
Pull D
own
/ 1 :
Defa
ult)
A
3
B
ICH7
-M
USB
6 : H
SDPA
USB
PORT
USB
PORT
HSDP
A
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
A
USB
1 : 3
-IN-1
GPI
O39
SPI B
OO
T
USB
CONF
IG.
C
USB
2 : B
LANK
C
1
WIR
ELES
S LA
N
USB
PORT
D
1
USB
0 : P
ORT
#1
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A
PCI
BIO
S RE
SET
USB
3 : B
LUET
OO
TH
0
SA
MS
UN
G
256M
B
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
11
DO N
OT D
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OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
1 (R
107)
USB
7 : C
AMER
A
Mem
ory
Size
Set
ting
1
USB
5 : P
ORT
#3
0
AC c
aps
: PCI
E ne
ed to
be
with
in 2
50m
ils o
f the
driv
er
CAM
ERA
2SA
MSU
NG P
ROPR
IETA
RY
ICH7
BO
OT
BIO
S SE
LECT
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
0 (R
108)
GNT
4*
4
R200
100K
1%
nost
uff
C693
100n
F10
V
0R6
87
RHU002N06Q513
D 3
1G
2S
10K
R620
1%
10V
100n
FC2
51
100n
FC6
9410
V
0R2
35
10K
R258
P3.3
V_AU
X
5%10
KR2
50
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X
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10K
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7SZ0
8U1
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stuf
f
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1 24
R621
0
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2.2K
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D 3
1G
2S
R630
100K
1%
P3.3
V
10V
C250
100n
F
1KR2
53
0R6
86
USBP
4PL4
USBP
5NL5
USBP
5PM
1US
BP6N
M2
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6PN4
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7NN3
USBP
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D1US
BRBI
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BIAS
*
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22
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0 P5A19
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LK
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STAT
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S_RS
T*A2
2
AF20
THRM
*
TP0_
BATL
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1
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F2US
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J3US
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A
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SI
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4
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4
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7
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ICH1
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801G
BM
0904
-002
053
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CLK1
4B2
CLK4
8
V26
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U27
R632
10K
100n
FC6
9110
V
P3.3
V
R588
8.2K
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V_AU
X
8.2K
R627
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24.9
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stuf
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V
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R692
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10K
R129
P3.3
V
10K
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10V
P3.3
V_AU
X
C692
100n
F
R677
00R7
01
P3.3
V
P3.3
V
C17
REQ
2*E1
3RE
Q3*
AE5
SATA
1RXN
AD5
SATA
1RXP
AG4
SATA
1TXN
AH4
SATA
1TXP
AD9
SATA
3RXN
AE9
SATA
3RXP
AG8
SATA
3TXN
AH8
SATA
3TXP
B10
SERR
*F1
5ST
OP*
F21
TP3
F14
TRDY
*
G7
GPI
O5_
PIRQ
H*
A7IR
DY*
AH20
MCH
_SYN
C*
E10
PAR
A9PC
ICLK
B18
PCIR
ST*
C9PE
RR*
A3PI
RQA*
B4PI
RQB*
C5PI
RQC*
B5PI
RQD*
E11
PLO
CK*
C26
PLTR
ST*
B19
PME*
D7RE
Q0*
C16
REQ
1*
C12
C_BE
1*D1
2C_
BE2*
C15
C_BE
3*
A12
DEVS
EL*
F16
FRAM
E*
E7G
NT0*
D16
GNT
1*D1
7G
NT2*
F13
GNT
3*
D8G
PIO
17_G
NT5*
C8G
PIO
1_RE
Q5*
A13
GPI
O22
_REQ
4*
G8
GPI
O2_
PIRQ
E*F7
GPI
O3_
PIRQ
F*
A14
GPI
O48
_GNT
4*
F8G
PIO
4_PI
RQG
*
D9AD
24B9
AD25
A8AD
26A6
AD27
C7AD
28B6
AD29
F18
AD3
E6AD
30D6
AD31
E16
AD4
A18
AD5
E17
AD6
A17
AD7
A15
AD8
C14
AD9
B15
C_BE
0*
C18
AD1
E14
AD10
D14
AD11
B12
AD12
C13
AD13
G15
AD14
G13
AD15
E12
AD16
C11
AD17
D11
AD18
A11
AD19
A16
AD2
A10
AD20
F11
AD21
F10
AD22
E9AD
23
ICH1
-282
801G
BM
0904
-002
053
E18
AD0
P1.5
V_PC
IE
0R1
280
R130
PLT3
_RST
#
CHP3
_PCI
STP#
CHP3
_CPU
STP#
MCH
3_BM
BUSY
#
USB3
_P2-
USB3
_P2+
SMB3
_CLK
SMB3
_CLK
_S
SMB3
_DAT
ASM
B3_D
ATA_
S
KBC3
_RSM
RST#
KBC3
_WAK
ESCI
#
SPI3
_CLK
SPI3
_CS0
#
SPI3
_MO
SISP
I3_M
ISO
CHP3
_USB
PWRO
N#
ITP3
_DBR
RESE
T#
CHP3
_SAT
ACLK
REQ
#
PEX1
_LAN
_RXN
3PE
X1_L
AN_R
XP3
PEX1
_MIN
ITXN
1PE
X1_M
INIT
XP1
PEX1
_MIN
IRXN
1PE
X1_M
INIR
XP1
PEX1
_MIN
TXP2
PEX1
_MIN
RXN2
PEX1
_MIN
RXP2
PEX1
_LAN
_TXN
3PE
X1_L
AN_T
XP3
USB3
_P3+
USB3
_P6+
USB3
_P3-
PEX1
_MIN
TXN2
PCI3
_DEV
SEL#
PLT3
_RST
_ORG
#
SMB3
_DAT
ASM
B3_C
LK
PCI3
_CLK
RUN#
CHP3
_SER
IRQ
PCI3
_IRD
Y#
PCI3
_TRD
Y#PC
I3_S
TOP#
PCI3
_SER
R#PC
I3_P
LOCK
#PC
I3_P
ERR#
SMB3
_LIN
KALE
RT#
CHP3
_SM
LINK
0CH
P3_S
MLI
NK1
KBC3
_PW
RBTN
#
MCH
3_IC
HSYN
C#
KBC3
_RUN
SCI#
PLT3
_RST
#
CHP3
_BIO
SWP#
THM
3_AL
ERT#
KBC3
_PW
RGD
USB3
_P5-
USB3
_P5+
DMI1
_RXN
0DM
I1_R
XP0
DMI1
_RXN
1DM
I1_R
XP1
DMI1
_TXN
0DM
I1_T
XP0
DMI1
_TXN
1DM
I1_T
XP1
CLK1
_PCI
EICH
#CL
K1_P
CIEI
CH
CHP3
_SUS
STAT
#
PLT3
_RST
_ORG
#
VRM
3_CP
U_PW
RGD
CHP3
_CPU
STP#
CHP3
_PCI
STP#
KBC3
_EXT
SMI#
USB3
_P0-
USB3
_P0+
USB3
_P1-
USB3
_P1+
USB3
_P4-
USB3
_P4+
PCI3
_INT
E#
PCI3
_INT
H#
AUD3
_SPK
R
SMB3
_ALE
RT#
CLK3
_USB
48CL
K3_I
CH14
CHP3
_SLP
S3#
CHP3
_SLP
S5#
CHP3
_SLP
S4#
CHP3
_DPR
SLPV
R
PCI3
_REQ
2#
PCI3
_REQ
3#
CLK3
_PCL
KICH
PCI3
_INT
A#PC
I3_I
NTB#
PCI3
_INT
C#PC
I3_I
NTD#
PCI3
_INT
F#PC
I3_I
NTG
#
PCI3
_GNT
3#
USB3
_P6-
USB3
_P7-
USB3
_P7+
PCI3
_FRA
ME#
PCI3
_REQ
0#
PCI3
_REQ
1#
8-19
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
19 o
f 55
4 / 5
near
by P
in M
18, U
18
near
by G
10
with
in 1
00 m
ils
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
D
near
by F
6
ELEC
TRO
NICS
Dist
ribut
e in
PCI
sec
tion
ICH7
-M
with
in 1
00 m
ils
with
in 1
00 m
ils
with
in 1
00 m
ils
1
with
in 1
00 m
ils
with
in 1
00 m
ils
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
3
near
by P
in J
7
1
near
by A
C10
2
with
in 1
00 m
ils
A
near
by P
in A
E23,
AH2
6
A
near
by P
in V
5
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
B
SAM
SUNG
PRO
PRIE
TARY
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
4
3
near
by P
in C
24, G
19, K
5, M
6
SA
MS
UN
G
with
in 1
00 m
ils
with
in 1
00 m
ilswi
thin
100
mils
D
with
in 1
00 m
ils
2
4
C
near
by A
G28
with
in 1
00m
ils
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
with
in 1
00 m
ils
C
with
in 1
00 m
ils
B
near
by D
28, T
28, A
D28
near
by P
in A
G9,
F17
P1.5
V_PC
IE
P1.0
5V
C696
100n
F10
V
C695
100n
F10
V
P1.5
V
C620
100n
F
P3.3
V 10V
10V
10V
100n
FC6
60
W7
VCCS
US3_
3_VC
CLAN
3_3_
4R7
VCCS
US3_
3_VC
CSUS
HDA
C1VC
CUSB
PLL
AE23
V_CP
U_IO
_1AE
26V_
CPU_
IO_2
AH26
V_CP
U_IO
_3
C700
100n
F
L7VC
CSUS
3_3_
15M
6VC
CSUS
3_3_
16M
7VC
CSUS
3_3_
17N7
VCCS
US3_
3_18
P7VC
CSUS
3_3_
19
C24
VCCS
US3_
3_2
D19
VCCS
US3_
3_3
D22
VCCS
US3_
3_4
E3VC
CSUS
3_3_
5G
19VC
CSUS
3_3_
6VC
CSUS
3_3_
7K3 K4
VCCS
US3_
3_8
K5VC
CSUS
3_3_
9
V1VC
CSUS
3_3_
VCCL
AN3_
3_1
V5VC
CSUS
3_3_
VCCL
AN3_
3_2
W2
VCCS
US3_
3_VC
CLAN
3_3_
3
AG15
VCC3
_3_9
U6VC
C3_3
_VCC
HDA
AG28
VCCD
MIP
LL
W5
VCCR
TC
AD2
VCCS
ATAP
LL
C28
VCCS
US1_
05_1
G20
VCCS
US1_
05_2
K7VC
CSUS
1_05
_3
AA2
VCCS
US1_
05_V
CCLA
N1_0
5_1
Y7VC
CSUS
1_05
_VCC
LAN1
_05_
2
A24
VCCS
US3_
3_1
VCCS
US3_
3_10
K6 L1VC
CSUS
3_3_
11L2
VCCS
US3_
3_12
L3VC
CSUS
3_3_
13L6
VCCS
US3_
3_14
B16
VCC3
_3_1
3B2
7VC
C3_3
_14
B7VC
C3_3
_15
C10
VCC3
_3_1
6D1
5VC
C3_3
_17
F9VC
C3_3
_18
G11
VCC3
_3_1
9
AA7
VCC3
_3_2
G12
VCC3
_3_2
0G
16VC
C3_3
_21
AB12
VCC3
_3_3
AB20
VCC3
_3_4
AC16
VCC3
_3_5
AD13
VCC3
_3_6
VCC3
_3_7
AD18
AG12
VCC3
_3_8
U23
VCC1
_5_B
_47
V22
VCC1
_5_B
_48
V23
VCC1
_5_B
_49
AC23
VCC1
_5_B
_5
W22
VCC1
_5_B
_50
W23
VCC1
_5_B
_51
Y22
VCC1
_5_B
_52
Y23
VCC1
_5_B
_53
AC24
VCC1
_5_B
_6AC
25VC
C1_5
_B_7
AC26
VCC1
_5_B
_8AD
26VC
C1_5
_B_9
A5VC
C3_3
_1
AG19
VCC3
_3_1
0AH
11VC
C3_3
_11
VCC3
_3_1
2B1
3
N22
VCC1
_5_B
_32
N23
VCC1
_5_B
_33
P22
VCC1
_5_B
_34
P23
VCC1
_5_B
_35
R22
VCC1
_5_B
_36
R23
VCC1
_5_B
_37
R24
VCC1
_5_B
_38
R25
VCC1
_5_B
_39
AB23
VCC1
_5_B
_4
R26
VCC1
_5_B
_40
T22
VCC1
_5_B
_41
T23
VCC1
_5_B
_42
T26
VCC1
_5_B
_43
T27
VCC1
_5_B
_44
T28
VCC1
_5_B
_45
U22
VCC1
_5_B
_46
F23
VCC1
_5_B
_18
F24
VCC1
_5_B
_19
AA23
VCC1
_5_B
_2
G22
VCC1
_5_B
_20
G23
VCC1
_5_B
_21
H22
VCC1
_5_B
_22
H23
VCC1
_5_B
_23
J22
VCC1
_5_B
_24
J23
VCC1
_5_B
_25
K22
VCC1
_5_B
_26
K23
VCC1
_5_B
_27
L22
VCC1
_5_B
_28
L23
VCC1
_5_B
_29
AB22
VCC1
_5_B
_3
M22
VCC1
_5_B
_30
M23
VCC1
_5_B
_31
T7VC
C1_5
_A_3
0
AB7
VCC1
_5_A
_4AB
8VC
C1_5
_A_5
AB9
VCC1
_5_A
_6AC
10VC
C1_5
_A_7
AC17
VCC1
_5_A
_8AC
6VC
C1_5
_A_9
AA22
VCC1
_5_B
_1
AD27
VCC1
_5_B
_10
AD28
VCC1
_5_B
_11
D26
VCC1
_5_B
_12
D27
VCC1
_5_B
_13
D28
VCC1
_5_B
_14
E24
VCC1
_5_B
_15
E25
VCC1
_5_B
_16
E26
VCC1
_5_B
_17
AF10
VCC1
_5_A
_16
AF5
VCC1
_5_A
_17
AF6
VCC1
_5_A
_18
AF9
VCC1
_5_A
_19
AB10
VCC1
_5_A
_2
AG5
VCC1
_5_A
_20
AG9
VCC1
_5_A
_21
AH5
VCC1
_5_A
_22
AH9
VCC1
_5_A
_23
F17
VCC1
_5_A
_24
G17
VCC1
_5_A
_25
H6VC
C1_5
_A_2
6H7
VCC1
_5_A
_27
J6VC
C1_5
_A_2
8J7
VCC1
_5_A
_29
AB17
VCC1
_5_A
_3
L12
VCC1
_05_
2
V18
VCC1
_05_
20
L14
VCC1
_05_
3L1
6VC
C1_0
5_4
L17
VCC1
_05_
5L1
8VC
C1_0
5_6
M11
VCC1
_05_
7M
18VC
C1_0
5_8
P11
VCC1
_05_
9
A1VC
C1_5
_A_1
AC7
VCC1
_5_A
_10
AC8
VCC1
_5_A
_11
AD10
VCC1
_5_A
_12
AD6
VCC1
_5_A
_13
AE10
VCC1
_5_A
_14
AE6
VCC1
_5_A
_15
ICH1
-4
AD17
V5RE
F_1
G10
V5RE
F_2
F6V5
REF_
SUS
L11
VCC1
_05_
1
P18
VCC1
_05_
10T1
1VC
C1_0
5_11
T18
VCC1
_05_
12U1
1VC
C1_0
5_13
U18
VCC1
_05_
14V1
1VC
C1_0
5_15
V12
VCC1
_05_
16V1
4VC
C1_0
5_17
V16
VCC1
_05_
18V1
7VC
C1_0
5_19
100n
FC6
17
0904
-002
053
8280
1GBM
10V
P5.0
V
10V
C624
C619
100n
F
C727
10V
100n
F
10V
10V
100n
F
C698
C623
100n
F
10V
100n
F
C667
10V
100n
FC6
66
C668
10V
100n
F
10V
100n
F
10V
100n
FC6
63
C701
100n
F10
V
10V
100n
FC6
65
1 3
10nF
C182
25V
B518
BLM
18PG
181S
N1
D507
BAT5
4
10V
P1.5
V
P1.5
V
C626
100n
F
P1.5
V
10V
C616
100n
F P1.5
V
P3.3
V
1000
nF6.
3V
P3.3
V
C659
100n
F10
V
P3.3
V_AU
X
C697
100n
F10
V
C704
1000
nFC6
21
P3.3
V
PRTC
_BAT
25V
10V
C703
100n
F
10V
C614
100n
F
10V
P3.3
V
6.3VC5
8347
00nF
100n
FC6
99
C662
100n
F
10V
10V
P3.3
V_AU
X
100n
FC6
15
BAT5
4D5
091 3
R579
2.2
R689
100
1%
P3.3
V
P1.0
5V
1%10R707
100n
FC5
85
P3.3
V_AU
X
2.5V330u
FEC
513
10V
10V
P1.5
V
AL
100n
FC7
02
C622
100n
F
P5.0
V_AU
X
10V
100n
FC6
64
B511
BLM
18PG
181S
N1
100n
FC6
25
10V
10V
P1.5
V
1uH
L505
10V
100n
FC6
58
6.3V
1000
0nF
C613
R580
2.2
P3.3
V_AU
X
AD2.5V220u
FEC
9
8-20
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
20 o
f 55
5 / 5
No R
eboo
t
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
B
CHP3
_SPK
RNo
Stu
ff
13
DD
ICH7
-M
3
Func
tion
Defa
ult
ICH7
-M O
ptio
ns
4
A
2
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
AC97
_SDO
UT
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL Sa
fe M
ode
2
Wak
e on
PCI
-E, O
D, P
ull-u
p to
ALW
AYS
powe
r
A
1
C
TBD
ELEC
TRO
NICS
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
SA
MS
UN
G
C
B
4SA
MSU
NG P
ROPR
IETA
RY
1%
nost
uff
1KR2
59
H24
VSS_98H27VSS_99H28
R178
10K
F28VSS_83 F3
VSS_84 F4VSS_85 F5VSS_86 G1VSS_87 G14VSS_88 G18VSS_89 G2
VSS_
9AB
16
VSS_90 G21
VSS_91 G24VSS_92 G25VSS_93 G26VSS_94 G5VSS_95 G6VSS_96 G9VSS_97
C27
VSS_
69C6
VSS_
7AB
11
VSS_
70D1
0VS
S_71
D13
VSS_72 D18VSS_73 D21VSS_74 D24VSS_75 E1VSS_76 E15
VSS_77 E2VSS_78 E4VSS_79 E8
VSS_
8AB
14
VSS_80 F12VSS_81 F27VSS_82
AH1
VSS_
54AH
12VS
S_55
AH23
VSS_
56AH
27VS
S_57
AH3
VSS_
58AH
7VS
S_59
B1
VSS_
6AA
26
VSS_
60B1
1
VSS_
61B1
4VS
S_62
B17
VSS_
63B2
0VS
S_64
B26
VSS_
65B2
8VS
S_66
B8VS
S_67
C2
VSS_
68
AF11
VSS_
4AA
24
VSS_
40AF
2VS
S_41
AF27
VSS_
42AF
28VS
S_43
AF4
VSS_
44AF
8VS
S_45
AG1
VSS_
46AG
11
VSS_
47AG
14VS
S_48
AG17
VSS_
49AG
20
VSS_
5AA
25
VSS_
50AG
25VS
S_51
AG3
VSS_
52AG
7VS
S_53
AD19
VSS_
25AD
23VS
S_26
AD3
VSS_
27AD
4
VSS_
28AD
7VS
S_29
AD8
VSS_
3AA
1
VSS_
30AE
11VS
S_31
AE13
VSS_
32AE
18
VSS_
33AE
2VS
S_34
AE21
VSS_
35AE
24VS
S_36
AE25
VSS_
37AE
4VS
S_38
AE8
VSS_
39
V27
VSS_
186
V28
W24
VSS_
187
VSS_
188
W25
VSS_
189
W26
VSS_
19AC
5
VSS_
190
W6
VSS_
191
Y24
VSS_
192
Y27
VSS_
193
Y28
Y3VS
S_19
4
VSS_
2A4
VSS_
20AC
9
VSS_
21AD
1VS
S_22
AD11
VSS_
23AD
15VS
S_24
T6VS
S_17
1U1
2U1
3VS
S_17
2VS
S_17
3U1
4VS
S_17
4U1
5VS
S_17
5U1
6VS
S_17
6U1
7
VSS_
177
U24
VSS_
178
U25
VSS_
179
U26
AC2
VSS_
18
VSS_
180
U4VS
S_18
1V1
3VS
S_18
2V1
5VS
S_18
3V2
VSS_
184
V24
VSS_
185
R11
VSS_
157
R12
R13
VSS_
158
VSS_
159
R14
VSS_
16AB
6
VSS_
160
R15
VSS_
161
R16
VSS_
162
R17
VSS_
163
R18
VSS_
164
T12
T13
VSS_
165
VSS_
166
T14
VSS_
167
T15
VSS_
168
T16
VSS_
169
T17
VSS_
17AC
11
VSS_
170
N26
VSS_
142
N5 N6VS
S_14
3VS
S_14
4P1
2VS
S_14
5P1
3VS
S_14
6P1
4VS
S_14
7P1
5VS
S_14
8P1
6VS
S_14
9P1
7
VSS_
15AB
4
P24
VSS_
150
VSS_
151
P27
VSS_
152
P28
VSS_
153
P3VS
S_15
4P4
VSS_
155
R1
VSS_
156
M4
VSS_
128
M5
N1VS
S_12
9
VSS_
13AB
27
VSS_
130
N11
VSS_
131
N12
VSS_
132
N13
VSS_
133
N14
VSS_
134
N15
VSS_
135
N16
N17
VSS_
136
VSS_
137
N18
VSS_
138
N2VS
S_13
9N2
4VS
S_14
AB28
VSS_
140
N25
VSS_
141
L13VSS_113L15
L24 VSS_114VSS_115L25VSS_116L26
VSS_117M12VSS_118M13VSS_119M14
VSS_
12AB
24
VSS_120M15M16 VSS_121
VSS_122M17VSS_123M24
VSS_
124
M27
VSS_
125
M28
VSS_
126
M3
VSS_
127
VSS_
1A2
3
AB19
VSS_
10
VSS_100H3VSS_101H4VSS_102H5
VSS_103J1VSS_104J2VSS_105J24VSS_106J25
J26 VSS_107VSS_108J5VSS_109K24
VSS_
11AB
21
VSS_110K27VSS_111K28VSS_112
ICH1
-582
801G
BM
0904
-002
053
R255
2.2K
10K
R274
R272
10K
R264
10K
10K
R690
P3.3
V_AU
X
10K
R261
10K
R269
R619
10K
10K
R252
R276
10K
R262
10K
R688
10K
R266
10K
R271
10K
nost
uff
R661
10K
P3.3
V
R273
10K1%
R263
10K
R251
10K
1KR1
55
10K
R277
P3.3
V_AU
X
10K
R691
10K
R618
R270
10K
2.2K
R256
R260
10K
10K
R267
P3.3
V
10K
R622
10K
R254
10K
R275
10K
R683
10K
R268
KBC3
_A20
G
PCI3
_INT
H#
SMB3
_LIN
KALE
RT#
PCI3
_GNT
3#R2
651K
PCI3
_PLO
CK#
PCI3
_DEV
SEL#
PCI3
_PER
R#
PCI3
_CLK
RUN#
KBC3
_CPU
RST#
AUD3
_SPK
RHD
A3_A
UD_S
DO
SMB3
_DAT
ASM
B3_C
LK
PEX3
_WAK
E#
PCI3
_INT
F#PC
I3_I
NTG
#
PCI3
_INT
E#
CHP3
_SM
LINK
0CH
P3_S
MLI
NK1
SMB3
_ALE
RT#
PCI3
_STO
P#PC
I3_S
ERR#
PCI3
_IRD
Y#PC
I3_T
RDY#
PCI3
_INT
B#PC
I3_I
NTC#
PCI3
_INT
D#
PCI3
_REQ
0#PC
I3_R
EQ1#
PCI3
_REQ
2#PC
I3_R
EQ3#
PCI3
_INT
A#
PCI3
_FRA
ME#
CHP3
_SER
IRQ
8-21
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
21 o
f 55
1
DD
SAM
SUNG
PRO
PRIE
TARY
1
For E
MI
B
CC
Plac
e ne
arby
PIN
23,
PIN
64
Plac
e ne
arby
PIN
33,
PIN
39
Pin
Com
patib
le w
ith 8
8E80
40 (1
205-
0033
99)
ELEC
TRO
NICS
A
Mar
vell 8
8E80
40
SA
MS
UN
G
Plac
e cr
ysta
l with
in 0
.75i
nche
s fro
m L
AN c
hip.
from
con
duct
ive m
ater
ial
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.DO
NOT
DIS
CLOS
E TO
OR
DUPL
ICAT
E FO
R OT
HERS
3
A
Need
at l
east
2.5
mm
or m
ore
clear
ance
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
Trac
e wi
dth
12m
ils
B
4
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
2 2
4
3
R61
4.7K
1% 75 R505
50V
C44
1nF
1nF
C48
50V
R42
392
4.7K
R64
1%
C524
10V
C30
100n
F
1
YELL
OW
+11 12
YELL
OW
-
P3.3
V_AU
X
10V
100n
F
3722
-002
713
9G
REEN
+G
REEN
-10 13
MNT
114
MNT
2
8TR
D1+
TRD1
-76
TRD2
+
TRD2
-3
TRD3
+54
TRD3
-
2TR
D4+
TRD4
-
LFE8
423
1RD
+
RD-
23RD
CT
16RX
+
RX-
1514RX
CT
7TD
+
TD-
8TD
CT6
10TX
+
TX-
9TX
CT11
J503
JACK
-LAN
-8P-
LED
2603
-000
099
LT1
C53
4700
nF-X
5R10
V
10V
4700
nF-X
5RC4
9
R63
4.7K
Y1
2801
-004
517
25M
Hz
12
P3.3
V
10V
100n
FC6
8
C45
100n
F10
V
75 R5031%
C32
0.01
5nF
50V
10V
C502 10
0nF
P2.5
V_LA
N
10VC504 100nF
10V
C66
100n
F
R500
221
1%
C33
0.01
5nF
50V
1VD
DO_T
TL4
61
VDDO
_TTL
58
VMAI
N_AV
LBL
47
VPD_
CLK
38VP
D_DA
TA41
WAK
E#6
XTAL
I15
XTAL
O14
VDD2
44
VDD2
564
VDD3
39VD
D433
VDD5
13VD
D67
VDD7
2
VDD8
58
VDDO
_TTL
145
VDDO
_TTL
240
VDDO
_TTL
3
21RX
P20
SWIT
CH_V
AUX
9SW
ITCH
_VCC
11
TEST
MO
DE46
THER
MAL
65
TSTP
T29
TXN
18TX
P17
VAUX
_AVL
BL12
VDD1
4853PC
IE_R
XP54
PCIE
_TXN
50PC
IE_T
XP49
PD_1
23
PD_2
54
PERS
T#5
PU_V
DDO
_TTL
43
REFC
LKN
56RE
FCLK
P55
RSET
16
RXN
NC13
27
NC14
62
NC2
35NC
334
NC4
36
NC5
32NC
628
NC7
22
NC8
57
NC9
23
PCIE
_RXN
42
HSDA
CN25
HSDA
CP24
LED_
ACT#
59
LED_
LINK
#63
LED_
SPEE
D#60
LOM
_DIS
ABLE
#10
NC1
37
NC10
30
NC11
31NC
1226
1205
-003
399
88E8
040-
A0-N
NC-1
-C00
U4 AVDD
152
AVDD
251
AVDD
L19
CLKR
EQ#
R504751%
10V
C67
100n
F
C51
100n
F10
V
P1.2
V_LA
N
C69
100n
F10
V10
V
P3.3
V_AU
X
50V
C29
1nF
C47
100n
F
R514751%
50V
C31
1nF
10V
221
R539
C50
100n
F
1.5K
R41
1%
1%
P3.3
V
100nFC52510V
10V
100n
FC5
23
P2.5
V_LA
N
P3.3
V_AU
X
C52
100n
F10
V
P3.3
V_AU
X
1nF
C9 3KV
R62
0LA
N3_A
CTLE
D#LA
N3_L
INK1
0_10
0#
LAN3
_MDI
1P
LAN3
_MDI
0PLA
N3_M
DI0N
LAN3
_MDI
1N
LOM
3_CL
KREQ
#
PEX1
_LAN
_RXP
3PE
X1_L
AN_R
XN3
LAN3
_ACT
LED#
LAN3
_LIN
K10_
100#
PEX3
_WAK
E#
PEX1
_LAN
_TXN
3PE
X1_L
AN_T
XP3
CLK1
_PCI
ELO
M#
CLK1
_PCI
ELO
M
PLT3
_RST
#
8-22
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
22 o
f 55
near
by S
B
Plac
e th
ese
R-Sh
ort o
n ju
st o
ppos
ite s
ide
of th
e CO
DEC.
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.DO
NOT
DIS
CLOS
E TO
OR
DUPL
ICAT
E FO
R OT
HERS
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
BOTT
OM
MIC
_B
ELEC
TRO
NICS
AA
B
H/P_
A
B
ALL
TYPE
IS 1
608 SA
MS
UN
G
4 4
3 3
2 2
C
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
CD
1 1
D
SAM
SUNG
PRO
PRIE
TARY
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL PC
BEE
P
D505
BAT5
4A
31
2
2200
nFC6
42
1203
-003
344
MIC
5252
-4.7
5BM
5U5
07
4BY
PASS
3ENG
ND2
IN1
5O
UT
10V
10V
C635
C589
1000
nF6.
3V
1000
0nF-
X5R
INST
PAR
SHO
RT51
0
G_A
UD
1%1KR148
SHO
RT50
9IN
STPA
R
G_A
UD
10V
C217
2200
nF
G_A
UD
INST
PAR
SHO
RT50
4
C216
100n
F10
V
R640
0
25V
C194
G_A
UD4.7n
F
R639
0
8SD
ATA-
OUT
5
SENS
EA13
SENS
EB34
SPDI
FO1
48SP
DIFO
24510
SYNC
VREF
2741
MIC
1-L_
PORT
-B-L
21M
IC1-
R_PO
RT-B
-R22
MIC
1-VR
EFO
28
MIC
2-L_
PORT
-F-L
16M
IC2-
R_PO
RT-F
-R17
MIC
2-VR
EFO
19
MO
NO-O
UT37
NC43
PC_B
EEP
1211RE
SET#
SDAT
A-IN
40JD
REF
LINE
1-L_
PORT
-C-L
23LI
NE1-
R_PO
RT-C
-R24
LINE
1-VR
EFO
18
LINE
2-L_
PORT
-E-L
14LI
NE2-
R_PO
RT-E
-R15
LINE
2-VR
EFO
20
LOUT
1-L_
PORT
-D-L
35LO
UT1-
R_PO
RT-D
-R36
LOUT
2-L_
PORT
-A-L
39LO
UT2-
R_PO
RT-A
-R
46DM
IC-C
LK3_
444
DVDD
1
DVDD
-IO9
DVSS
_14
DVSS
_27
EAPD
47
GPI
O0_
DMIC
01_2
2
GPI
O1_
DMIC
-3_4
3
HPO
UT-L
_PO
RT-I-
L33
HPO
UT-R
_PO
RT-I-
R32
25AV
DD1
AVDD
238
AVSS
126 42
AVSS
2
BCLK
6
CBN
30CB
P29
CPVE
E31
DMIC
-CLK
1_2
U508
ALC2
72-G
R
1205
-003
526
10nF
C558
6.3V
1000
nFC1
93
25V
1%33
R641
10V
1%4.
7KR6
03
100n
FC6
41 10V
C593
100n
F
P4.7
5V_A
UD
P4.7
5V_A
UD
6.3V
C634
1000
nF-X
5R
C643
10nF
25V
nost
uff
10V
C636
1000
0nF-
X5R
P4.7
5V_A
UD
C669
0.01
5nF
50V
1%20K
R149
C717
10nF
25V
100n
FC5
92
10V
C671
1000
0nF
G_A
UDG
_AUD
6.3V
100n
FC2
15
10V
G_A
UD
P5.0
V_AU
D
100n
F10
V
C637
INST
PAR
100n
FC6
7210
V
SHO
RT50
5
R147
1K1%
6.3V
C591
1000
nF6.
3V10
00nF
C590
R644
20K
1%
G_A
UD
3D
G 1S
2
G_A
UD
Q16
RHU0
02N0
6
G_A
UD
P3.3
V
6.3V
1000
nFC5
88
G_A
UD
R602
4.7K
1%
10V
C195
1000
0nF-
X5R
G_A
UD
SHO
RT50
6IN
STPA
R
INST
PAR
SHO
RT50
7
1%1%
20K
R596
G_A
UD
5.1K
R645
HDA3
_AUD
_SYN
CHD
A3_A
UD_R
ST#
AUD3
_BEE
P
AUD3
_GPI
O0#
AUD3
_GPI
O1#
AUD5
_SEN
S_HP
#AU
D5_S
ENS_
MIC
#
AUD5
_MIC
2_RI
GHT
AUD5
_MIC
2_LE
FT
HDA3
_AUD
_SDI
0AU
D5_H
P_O
_LEF
TAU
D5_H
P_O
_RIG
HT
AUD5
_MIC
1_VR
EF_R
IGHT
AUD5
_MIC
1_VR
EF_L
EFT
AUD5
_MIC
2_VR
EF
AUD3
_SPK
R
AUD3
_BEE
P
AUD5
_LIN
E_O
_LEF
TAU
D5_L
INE_
O_R
IGHT
AUD5
_MIC
1_VR
EF_R
IGHT
AUD5
_MIC
1_VR
EF_L
EFT
HDA3
_AUD
_BCL
KHD
A3_A
UD_S
DO
8-23
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
23 o
f 55
10dB
01
10
1
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
1
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
0
D
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
3
GAI
N0
C
D
A
B
2
1
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
0
B
C
SA
MS
UN
GEL
ECTR
ONI
CS
A
3
2
GAI
N1
15.6
dB
21.6
dB
SAM
SUNG
PRO
PRIE
TARY
4 41
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
INTE
RNAL
STE
REO
SPE
AKER
S
10dB
GAI
N
6dB
P5.0
V_AM
P
10V G_A
UD
10K
1%C675100nF
P5.0
V_AM
P
R700
nostuff
100K R6681%
nost
uff
C707
1nF
50V
RHU0
02N0
6Q
515
D3
G 12
S
G_A
UD
10V
C670
1000
0nF-
X5R
BLM
18PG
181S
N1B5
20
3711
-000
456
J519
HDR-
4P-1
R-SM
D1 2 3 4 M
NT1
5 6M
NT2
B521
BLM
18PG
181S
N1
C677100nF10V nostuff
R643100K1%
nost
uff
50V
1nF
C706
C638
100n
F10
V
P5.0
V_AU
D
G_A
UD
INST
PAR
SHO
RT51
1
1nF
C708
G_A
UD
nost
uff
50V
G_A
UD
10V100nF C640
BLM
18PG
181S
N1B5
22
50V
nost
uff
C709
1nF
0 R642 nostuff
10V
1000
0nF-
X5R
C716
10V
C674
100n
F
THER
M21
VDD
16
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8-24
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
24 o
f 55B
ELEC
TRO
NICS
AA
B
D
CC
D
2
14 4
3 3
2
1
SAM
SUNG
PRO
PRIE
TARY
SAMS
UNG
ELEC
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ICS
CO’S
PRO
PERT
Y.DO
NOT
DIS
CLOS
E TO
OR
DUPL
ICAT
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R OT
HERS
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
PROP
RIET
ARY
INFO
RMAT
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THAT
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162
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8-25
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
25 o
f 55
R L
R L
HEAD
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UNG
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PERT
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OR
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R OT
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3 3
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PT A
S AU
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BY
SAMS
UNG.
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SAM
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TARY
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NTAI
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DENT
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8-26
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
26 o
f 55
ELEC
TRO
NICS
AA
BB
CC
DD
4 4
32 2
1 1
SAM
SUNG
PRO
PRIE
TARY
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THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.DO
NOT
DIS
CLOS
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8-27
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
27 o
f 55
2
1 1
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SUNG
PRO
PRIE
TARY
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
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UNG
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PERT
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8-28
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
28 o
f 55
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UNG
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8-29
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
29 o
f 55
3 3
2 2
1 1
SAM
SUNG
PRO
PRIE
TARY
THIS
DOC
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T CO
NTAI
NS C
ONFI
DENT
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ER D
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ARG
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PROP
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SAMS
UNG
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TRON
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PRO
PERT
Y.DO
NOT
DIS
CLOS
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8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
30 o
f 55
101-
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50V
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1nF
RMNT
-25-
70-1
PM
T5
P3.3
V
50V
C228
1nF
50V
C618
1nF
50V
C661
1nF
1nF
C627
50V
RMNT
-25-
70-1
PM
T12
EXF-
0023
-02
EMI1
EMI
nost
uff
MT4
RMNT
-25-
70-1
P
RMNT
-25-
70-1
PM
T9
1nF
C255
50V
50V
C155
50V
1nF
RMNT
-25-
70-1
PM
T8
1nF
C726
MT6
RMNT
-25-
70-1
P
EXF-
0023
-02
EMI2
EMI
nost
uff
50V
C218
1nF
50V
C219
1nF
50V
C527
1nF
1nF
C112
50V
50V
C261
1nF
MT7
RMNT
-25-
70-1
P
MT1
3RM
NT-2
5-70
-1P
REV1
1
23
MT1
0RM
NT-2
5-70
-1P
EMI5
EXF-
0023
-02
nost
uff
RMNT
-25-
70-1
PM
T3
P1.0
5V
RMNT
-25-
70-1
PM
T14
EMI
RMNT
-25-
70-1
PM
T11
1nF
C584
50V
EXF-
0023
-02
EMI6
EMI
nost
uff
P3.3
V_AU
XP3
.3V
50V
C10
1nF
50V
C258
1nF
P3.3
V
50V
C146
1nF
1nF
C147
50V
P3.3
V
1nF
C450
V
C237
1nF
P3.3
V_AU
X
EMI
EMI3
EXF-
0023
-02
nost
uff
50V
50V
C46
1nF
1nF
C253
50V
50V
C260
1nF
P1.5
V
EMI
EMI4
EXF-
0023
-02
nost
uff
50V
C28
1nF
8-31
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
31 o
f 55B
SA
MS
UN
GEL
ECTR
ONI
CS
AA
B
D
SIM
CAR
D CO
NN.
CC
D
2
4 4
3 3
21 1
SAM
SUNG
PRO
PRIE
TARY
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.DO
NOT
DIS
CLOS
E TO
OR
DUPL
ICAT
E FO
R OT
HERS
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
SIM
Car
d SU
B Bo
ard
C7
C8CD
_LCD
_UC4
MNT
11 2
MNT
2
EDG
E-SI
M-8
P-M
NTJ5
08
3709
-001
478
C1C1 C2
C2C3
C3
C5C5 C6
C6
C7
G_S
B
G_S
BG
_SB
G_S
BG_S
BG
_SB
R93
10K
D821 G
_SB
G_S
B
G_S
B
D9PGB1010603NR21
PGB1010603NR
nost
uff
D11PGB1010603NR
nost
uff
21
nost
uff
2 20
34
56
78
9 MNT
121 22
MNT
223
MNT
3M
NT4
24
1
1011
1213
1415
1617
1819
0.01
nFC1
070.
5pF
50V
P3.3
V_SU
B
SOCK
-20P
-2R-
SMD
J2 3710
-002
164
6.3V
10%
0.01nF C640.5pF
50V
C651000nF-X5R
50V
0.5pF C630.01nF
PGB1010603NRD10
21
P3.3
V_SU
B
nost
uff
D7PGB1010603NR21
nost
uff
C106
100n
F10
V
MT1
RMNT
-28-
45-1
P
G_S
BG
_SB
MT2
RMNT
-28-
45-1
P
SUB_
SIM
3_C3
CLK
SUB_
SIM
3_C7
DATA
SUB_
SIM
3_C4
DET
SUB_
SIM
3_C2
RST
SUB_
SIM
3_C1
VCC
SUB_
SIM
3_C6
VPP
SUB_
SIM
3_C3
CLK
SUB_
SIM
3_C2
RST
SUB_
SIM
3_C6
VPP
SUB_
SIM
3_C7
DATA
SUB_
SIM
3_C4
DET
SUB_
SIM
3_C1
VCC
8-32
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
32 o
f 55
C A
4
2
B
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
4
B
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
112
43
A
D
SAM
SUNG
PRO
PRIE
TARY
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
A
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
C
1
ELEC
TRO
NICS
C
2 2
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
SA
MS
UN
G
43
B
1SA
MSU
NG P
ROPR
IETA
RY
D
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
D
3
C
BD A
3
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
8-33
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
33 o
f 55
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
2
1
AA
2
1 1
SAM
SUNG
PRO
PRIE
TARY
B
1
AA
BBB
C
BCCD
1
SAM
SUNG
PRO
PRIE
TARY
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
2
1
4
3 3
2
CC
DD
4
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.DO
NOT
DIS
CLOS
E TO
OR
DUPL
ICAT
E FO
R OT
HERS
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
C
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.DO
NOT
DIS
CLOS
E TO
OR
DUPL
ICAT
E FO
R OT
HERS
2
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
G_P
1.05
V
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
DD
4 4
3 34
3 3
2
D
4SA
MSU
NG P
ROPR
IETA
RY
AA
B
VDC_
ADPT
P2.5
V_LA
N
VCC_
CRT
G_C
PU
G_A
UD
P5.0
V
P1.2
V_LA
N
P5.0
V_FI
LT
MEM
1_VR
EF
P2.5
V
P5.0
V_AM
PG
_DDR
VREF
P1.8
V_AU
X
P3.3
V_M
ICO
M
P4.7
5V_A
UD
P3.3
V
P5.0
V_AU
D
P5.0
V_AL
W
LCD_
VDD3
.3V
GRO
UND
P3.3
V_AU
X
GRO
UND
GRO
UND
PRTC
_BAT
G_S
B
P1.0
5V
CPU_
CORE
G_C
HG
P1.5
V
P0.9
V
P3.3
V_AU
X
G_P
3.3V
G_M
IC
P5.0
V_AU
XP5
.0V_
AUX
VCCA
VDC
CPU_
CORE
P5.0
V_LE
D
P1.5
V_PC
IE
P3.3
V_SU
B
P3.3
V
P3.3
V
P3.3
V_M
CD
P5.0
V_AU
X
P3.3
V_AU
X
P5.0
V_AU
X
BGAT
E
CPU_
CORE
GRO
UND
CPU_
CORE
P3.3
V_AU
X
P3.3
V
8-34
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
34 o
f 55
166
MHz
BSEL
2
SRC8
1
C
VDD_
PLL3
_IO
1
10
FSC
1
CLK
REQ
E
VDD_
PLL3
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
0
VDD_
CPU
CLK
REQ
F
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
RSVD
B
Plac
e 14
.318
MHz
with
in
SRC2
VDD_
SRC
ELEC
TRO
NICS
3
026
6 M
Hz
DE
VIC
E1
1
400
MHz
A
VDD_
CPU_
IO
Pin
20/2
1
MIN
I CAR
D
Pin
24/2
5
01
VDD_
48
0
CLK
RE
Q
1
27M
& 2
7M_S
S
SR
C P
OR
T
SRC_
0/SR
C_0#
4
SRC6
FSB 0
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
LOW
A
C
133
MHz
HIG
H
VDD_
REF
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
HOST
CLK
CLK
REQ
B
PEG
_CLK
/PEG
_CLK
#
FSA
D
0
1
1
VDD_
PCI
0
BSEL
0
LOM
3_CL
KREQ
#
DOT_
96/D
OT_
96#
SEL_
LCDC
LK*
D
333
MHz
SATA
0
1
This
part
is 64
pin
QFN
pac
kage
.
0
SRC4
SAM
SUNG
PRO
PRIE
TARY
1
1
B
For E
MI
For E
MI
2
0
4
200
MHz
3
BSEL
1
500m
ils o
f CK-
505
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
1
SA
MS
UN
G
VDD_
SRC_
IO
010
0 M
Hz
VDD_
IO
CLK
REQ
A
GM
CH
2
P3.3
V
2801
-004
518
14.3
1818
MHz
Y5001
2
0.01
8nF
C149
50V
1%22
.6R1
31
B514
BLM
18PG
181S
N1
R133
22.6
1%
R127
3350V C1620.033nF
1%
0.033nF C56250V
nost
uff
BLM
18PG
181S
N1B5
12
R107
0
R56510K1%
nost
uff
P3.3
V B513
BLM
18PG
181S
N1
C158100nF10V
1% 10K R569
nost
uff
nost
uff
1%R5
7133
C161100nF10V
VSS_
CPU
59VS
S_IO
22VS
S_PC
I15
VSS_
PLL3
26
VSS_
REF
1VS
S_SR
C130
VSS_
SRC2
36VS
S_SR
C349
XTAL
_IN
3 2XT
AL_O
UT
56
VDD_
IO19
VDD_
PCI
9VD
D_PL
L323
27VD
D_PL
L3_I
O
VDD_
REF
4
VDD_
SRC
46
VDD_
SRC_
IO1
33VD
D_SR
C_IO
243
VDD_
SRC_
IO3
52 18VS
S_48
SRC6
#47
SRC7
#_CL
KREQ
E#50
SRC7
_CLK
REQ
F#51
SRC8
#_IT
P#53
SRC8
_ITP
54
SRC9
37SR
C9#
38
USB_
FS_A
17
VDD_
4816
VDD_
CPU
62VD
D_CP
U_IO
SRC1
041
SRC1
0#42
SRC1
1#_C
LKRE
QG
#39
SRC1
1_CL
KREQ
H#40
SRC2
28SR
C2#
29
SRC3
#_CL
KREQ
D#32
SRC3
_CLK
REQ
C#3134
SRC4
35SR
C4#
SRC6
48
PCIS
TOP#
45
PCI_
0_CL
KREQ
_A#
8PC
I_1_
CLKR
EQ_B
#10
PCI_
211
PCI_
312
PCI_
4_SE
L_LC
DCLK
#13
REF_
FS_C
_TES
T_SE
L5
SCL
7SD
A6
SRC0
#_DO
T96#
21SR
C0_D
OT9
620
63
CPU0
61CP
U0#
60
CPU1
_MCH
58CP
U1_M
CH#
57
CPUS
TOP#
44
FSB_
TEST
MO
DE64
LCDC
LK#_
27M
_SS
25LC
DCLK
_27M
24
NC55
PCIF
_5_I
TP_E
N14
IDTC
V179
BNLG
1205
-003
159
U506
CLKP
WRG
D_PW
RDN#
475
R562
1%
P3.3
V
6.3V4700nF-X7R C571
C166100nF10V
100nF C15710V
R104
0
P1.0
5V
R99
0
10V 100nF C160
R1030
10V C164100nF
C159100nF10V
C165100nF10V
1% 1%R5
6347
5
10K
R561
6.3V
561%
C57310000nF
0.01
2nF
C563
50V
R100
C596100nF10V
22.6
R564
1%
6.3V10000nF C572
10V 100nF C574
C597100nF10V
1%33
R570
6.3VC5944700nF-X7R
R560
01% 10K R567
100nF C57510V
10000nF C576
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V
6.3V
0.033nF C16350V
1%R1021K
1K R1051%
1%R1011K
R135
1KR1
181K
1%
R116
1K1%1%
0 R106
10K R5661%
0.01
8nF
C148
50V
6.3V
R568
2.2K
C59510000nF
CLK3
_14M
HZ_R
CPU1
_BSE
L2CP
U1_B
SEL1
CPU1
_BSE
L0
CLK1
_BSE
L0CL
K1_B
SEL1
CLK1
_BSE
L2
MCH
1_BS
EL0
MCH
1_BS
EL1
MCH
1_BS
EL2
CLK1
_BSE
L1CL
K1_B
SEL2
CLK1
_BSE
L0
CLK3
_48M
HZ_R
CLK1
_PCI
EICH
#CL
K1_P
CIEI
CH
CLK1
_MIN
I3PC
IE#
CLK3
_PCI
2_R
CLK3
_PCI
4_R
CLK3
_PCI
F_R
CLK1
_MIN
I3PC
IE
LOM
3_CL
KREQ
#
EXP3
_CLK
REQ
#
CLK1
_PCI
ELO
M#
CLK1
_DRE
FCLK
#CL
K1_D
REFC
LK
CLK1
_MCH
3GPL
L#CL
K1_M
CH3G
PLL
CHP3
_SAT
ACLK
REQ
#
CLK3
_PCL
KMIC
OM
MCH
3_CL
KREQ
#
CLK3
_DBG
LPC
MIN
3_CL
KREQ
#
CLK1
_PCI
ELO
M
CLK1
_DRE
FSSC
LKCL
K1_D
REFS
SCLK
#
CLK3
_USB
48
SMB3
_CLK
_SSM
B3_D
ATA_
S
VRM
3_CP
U_PW
RGD
CHP3
_CPU
STP#
CHP3
_PCI
STP#
CLK1
_BSE
L2
CLK1
_BSE
L0
CLK3
_ICH
14
CLK3
_PCL
KICH
CLK3
_FM
48
CLK1
_MIN
IPCI
ECL
K1_M
INIP
CIE#
CLK1
_SAT
ACL
K1_S
ATA#
CLK1
_BSE
L1
CLK0
_HCL
K1#
CLK0
_HCL
K1
CLK0
_HCL
K0#
CLK0
_HCL
K0
8-35
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
35 o
f 55D
ELEC
TRO
NICS
93 d
egre
e C
SA
MS
UN
G
BC
4
D
TRIP
_SET
pin
vol
tage
= (T
-75)
/21
2
3
1
R2
3.3
* [R2
/(R1+
R2)]
= (T
-75)
/21
SMBU
S Ad
dres
s 7A
h
R1
3
2
A
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
C
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
4
10m
il wid
th a
nd 1
0mil s
pacin
g.
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
1
SAM
SUNG
PRO
PRIE
TARY
Opp
osite
sid
e of
CPU
.
A
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
Line
Wid
th =
20
mil
THER
MAL
SEN
SOR
& FA
N CO
NTRO
L
B
6.3VC5
910
000n
F
nost
uff
Q12
MM
BT39
041
32C5
82.
2nF
50V
11TR
IP_S
ET
1VD
D_3V
24VD
D_5V
_127
VDD_
5V_2
15NC
_2NC
_32114
POW
ER_O
K16
RESE
T#
9SH
DN_S
EL
23SM
CLK
22SM
DATA
12SY
S_SH
DN#
28TA
CH13
THER
MTR
IP#
THRM
_PAD
292DN
1
4DN
2
6DN
3
3DP
1
5DP
2
7DP
3
25FA
N_1
26FA
N_2
10FA
N_M
ODE
20G
ND8
NC_1
U5 EMC2
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8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
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iden
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SRP
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36 o
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8-37
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
37 o
f 55
9A
SHA
DOW
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8-38
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
38 o
f 55
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
1
4
D
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8-39
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
39 o
f 55
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
EXCE
PT A
S AU
THOR
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BY
SAMS
UNG.
PROP
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INFO
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PERT
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8-40
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
40 o
f 55
Need
2A
Rout
ing
1 PO
RT U
SB C
ONN
ECTO
R
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
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PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
Need
4A
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/ OFF
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trol
B
EXCE
PT A
S AU
THOR
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UNG.
AA
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MS
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DD B
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PRO
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1
SAMS
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TRON
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CO’S
PRO
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Y.DO
NOT
DIS
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OR
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2
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8-41
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
41 o
f 55
SAM
SUNG
PRO
PRIE
TARY
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.DO
NOT
DIS
CLOS
E TO
OR
DUPL
ICAT
E FO
R OT
HERS
CAM
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USB
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evice
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CEPT
AS
AUTH
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MS
UN
GEL
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10V
8-42
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
42 o
f 55
331
A
80H
DECO
DER
CONN
ECTO
R
EXCE
PT A
S AU
THOR
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BY
SAMS
UNG.
B
PROP
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INFO
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THAT
IS
4
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42
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DENT
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MS
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8-43
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
43 o
f 55
SA
MS
UN
GEL
ECTR
ONI
CS
CRT
CONN
ECTO
R
BB
AA
DD
CC
4 4
2 2
3 3
SAM
SUNG
PRO
PRIE
TARY
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
1 1
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.DO
NOT
DIS
CLOS
E TO
OR
DUPL
ICAT
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R OT
HERS
EXCE
PT A
S AU
THOR
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BY
SAMS
UNG.
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CRT
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8-44
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
44 o
f 55C
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
1
4
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
SA
MS
UN
G
D
ELEC
TRO
NICS
A
B
3
D
SAM
SUNG
PRO
PRIE
TARY
2
3
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
C
DO N
OT D
ISCL
OSE
TO O
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PLIC
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FOR
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RS
2
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1
32
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#
P3.3
V_M
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M
3711
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613
J502
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D
8-45
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
45 o
f 55
4 4
EXCEPT AS AUTHORIZED BY SAMSUNG.
3
ELEC
TRO
NICS
C
SA
MS
UN
G
B
KEYB
OAR
D
D
DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS
SAM
SUNG
PRO
PRIE
TARY
1
A
2
B
3
D C
THIS DOCUMENT CONTAINS CONFIDENTIAL
1
A
PROPRIETARY INFORMATION THAT IS
SAMSUNG ELECTRONICS CO’S PROPERTY.
2
9 MNT
126 27
MNT
2
21 22 23 24 253 4 5 6 7 8 12 13 14 15 16 17 18 192 20
FPC-
KBD-
25P
J1
3708
-002
166
1 10 11
KBC5
_KSI
(0:7
)
KBC5
_KSO
(0:1
5)
8-46
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
46 o
f 55
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
24
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
3
4
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C
SA
MS
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D
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TO O
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PLIC
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FOR
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RS
SAM
SUNG
PRO
PRIE
TARY
2
AB
3
D C
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
1
A
10V
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8-47
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
47 o
f 55
G R
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
2
B
4
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TERI
N/CH
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A
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C
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PT A
S AU
THOR
IZED
BY
SAMS
UNG.
1
D
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
SA
MS
UN
G
4
ELEC
TRO
NICS
A
3
D B
2
3
SAM
SUNG
PRO
PRIE
TARY
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
C
DO N
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OSE
TO O
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PLIC
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FOR
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8-48
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
48 o
f 55
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
3
4
ELEC
TRO
NICS
4
C
SA
MS
UN
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B
2
D
SAM
SUNG
PRO
PRIE
TARY
1
A
LID_
SWIT
CH
DO N
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ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
B
3
C
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
1
D
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
2
A
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FC5
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M
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PUT
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1009
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2ELH
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55XX
U12
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#
1%R538
20K
8-49
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
49 o
f 55C
EXCE
PT A
S AU
THOR
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BY
SAMS
UNG.
A
SAM
SUNG
PRO
PRIE
TARY
B
C
(321
~ 3
59KH
z)
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2
4
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TO O
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PLIC
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FOR
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RS
PROP
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INFO
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THAT
IS
SAMS
UNG
ELEC
TRON
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CO’S
PRO
PERT
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D
31
B
SA
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THIS
DOC
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8-50
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
50 o
f 55
3 3
4
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
P5V
OCP
(Typ
) : 1
0.3A
P3.3
V O
CP(T
yp) :
6.8
A
SA
MS
UN
G
RdsO
n 16
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ohm
2
1
18 m
ohm
ELEC
TRO
NICS
D
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
SAM
SUNG
PRO
PRIE
TARY
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
1
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n 30
moh
m
CC
(8A)
P3.3
V_AU
X &
P5.0
V_AU
X
B
2
5V /
3.3V
: 28
0KHz
/ 43
0KHz
(3.5
A)
TONS
EL V
REF2
D
A
B
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
18 m
ohm
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
A
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8-51
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
51 o
f 55
CHIP
SET
POW
ER(P
1.5V
_AUX
& P
1.05
V)
2
SAM
SUNG
ELE
CTRO
NICS
CO
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ROPE
RTY.
EXCE
PT A
S AU
THO
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D BY
SAM
SUNG
.
(3A)
1
A
BB
A
DO N
OT
DISC
LOSE
TO
OR
DUPL
ICAT
E FO
R O
THER
S
SAM
SUNG
CC
COM
-22C
-015
(199
6.6.
5) R
EV. 3
PRO
PRIE
TARY
INFO
RMAT
ION
THAT
IS
SAM
SUNG
PRO
PRIE
TARY
3
2
D
(6.5
A)
4 4
3
THIS
DO
CUM
ENT
CONT
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CO
NFID
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AL
15m
ohm
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/des
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82
G_P
1.05
V
25V
10V
G_P
1.05
VC225
100n
F
SI48
04BD
Y-T1
-E3
Q50
6-1
D1 78 D2
2G
1S
2.2u
HL5
07
SIQ
1048
-2R2
PGD2
9RT
N
6SS
113
SS2
10TO
N
3VD
D116
VDD2
7VO
UT1
12VO
UT2
DL2
5EN
114
EN2
8FB
111
FB2
23IL
IM1
20IL
IM2
1LX
118
LX2
25PA
D
22PG
D121
1203
-004
685
U511
BST1
217
BST2
24DH
119
DH2
4DL
115
SI48
04BD
Y-T1
-E3
Q50
9-1
D17
8 D2
2G
1S
SC41
5MLT
RT
10V
100n
FC6
51
20K
R647
1%
1%R1
88 10K
25V
100n
FC2
40
10V
100n
FC6
4850
V
C649 1n
F
ALEC51
468
uF25
V
C221 10
0nF
10V
0R186
20K
R214
1%
R213
2K
10nF
C652
25V
1%
C681 10
0nF
25V
AD2.5V220u
FEC
506
2409
-001
159
0.03
5OHM
20K
R670R6
69
1%3.3
nost
uff
G_P
1.05
V1KR1
9010
0nF
C224 10
V
VDC
G_P
1.05
V
20K
R646
1%
SI48
04BD
Y-T1
-E3
Q50
9-2
D15
6 D2
4G
3S
nost
uff
D14
BAT5
4A
31
2
25VC6
504.
7nF
SI48
04BD
Y-T1
-E3
Q50
6-2
D1 56 D2
4G
3S
1%3.01
KR6
49
10V100n
FC2
56
R185 1M 1%
P3.3
V
R160
8-SH
ORT
SHO
RT2
P1.0
5V
G_P
1.05
V
25V
C683 10
0nF
P5.0
V_AU
X
EC7
330u
F2.
5VAL 24
02-0
0116
8
20K
R189 1%
G_P
1.05
V
G_P
1.05
V
VDC
3.9u
HL5
06
SIQ
1048
-3R9
50V
C647
1nF
1nF
VCCP
3_PW
RGD
KBC3
_PW
RON
KBC3
_VRO
N
KBC3
_PW
RON
50V
C684
8-52
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
52 o
f 55
1
4
C
3
C
SAM
SUNG
ELE
CTRO
NICS
CO
’S P
ROPE
RTY.
4
ELEC
TRO
NICS
To e
nhan
ce
THIS
DO
CUM
ENT
CONT
AINS
CO
NFID
ENTI
AL
( 2.3
9V )
DO N
OT
DISC
LOSE
TO
OR
DUPL
ICAT
E FO
R O
THER
S
A
B
VCHG
=12.
597V
EMI
B
22
(ACT
IVE
LOW
)
COM
-22C
-015
(199
6.6.
5) R
EV. 3
D
DMB
perfo
rman
ce (0
6031
0)
A
IPRE
CHG
=0.2
7A
15.1
5V@
1.26
4V
E:/m
onte
vina_
stan
dard
_ddr
3_Re
v0.3
/des
ign_
bloc
ks/P
WR_
MV_
Char
ger_
Isl6
256a
EXCE
PT A
S AU
THO
RIZE
D BY
SAM
SUNG
.
PRO
PRIE
TARY
INFO
RMAT
ION
THAT
IS
SAM
SUNG
ICHG
=1.3
8A
FOR
2000
mAh
D
SAM
SUNG
PRO
PRIE
TARY
(1.2
6V)3
CHAR
GER
& P
OW
ER M
ANAG
EMEN
T
ICHG
=2.5
6A
FOR
4000
mAh
1
25V4700nF-X5R C534
2S1
16V
C26
10nF
Q2-
1FD
S493
5A_N
L
7 D1D28
G
25V
C23
100n
F
B501
HU-1
M20
12-1
21JT
C5364700nF-X5R25V
100n
FC3
25V
1%R27
100K
nost
uff
VDC_
ADPT
100K
R10
1%
nost
uff
R32
100K
1%
13
2
1%43.2
KR2
VDC_
ADPT
D5BAV99LT1
1%475K
R38
SHO
RT50
1IN
STPA
R
nost
uff
56 D2
4G
3S
100
R40
1%
312
G_C
HG
SI48
04BD
Y-T1
-E3
Q50
0-2
D1
BAT5
4AD4
1%
R70.
033
1W
25V
C27
100n
F
EC50
068
uF25
VAL
VREF
16V
C43
10nF
G_C
HG
P3.3
V_M
ICO
M
BLM
18PG
181S
N1B3
10V
C41
100n
F
1%R507
100K
B500
HU-1
M20
12-1
21JT
3D1
8 7D2 D3
6 5D4
4GS1
1 2S2 S3
1nF
C5
AP44
35G
MQ
3
nost
uff
50V
C25
6.8n
F50
V
R36
10K
B502
HU-1
M20
12-1
21JT
1%150K
R30
S
1%R29
200K
SI48
04BD
Y-T1
-E3
Q50
0-1
D17
8 D2
2G
1
25VC5
0110
nF
1%100
R31
nost
uff
300K
1%R545
R60
300K
1%
G_C
HG
25V
100n
FC5
11
Q5
D3
1G
2S
VDC
G_C
HG
RHU0
02N0
6
R531
27.4
K1%
23
P3.3
V_M
ICO
M
JACK
-DC-
POW
ER-3
PJ5
00 3722
-001
175
1
G_C
HG
0R530
1KR532
1%
R529
5.1
1%
G_C
HG
0.1n
F50
VC7
4700nF-X5R C53725V
R501
0
R502
100K
nost
uff
G_CHG
1%
10K
R33
1%
B2 BLM
18PG
181S
N1
5 D1D26
G4S3
G_C
HG
Q2-
2FD
S493
5A_N
L
BAV99LT1D6
13
2
G_C
HGG
_CHG
2.2
R526
G_C
HG
25V
C532
1000
nF
R59
39.2
K1%
R58
0
G_C
HG
G_C
HG
C8
Q1
3D
G 1S
2
50V
0.1n
F
100
R39
RHU0
02N0
6
25V
nost
uff
G_C
HG
1%
100n
FC4
2
25V
C509
4700
nF-X
5R10
0nF
C500
25V
R1 300K
1%
50V
0.1n
F
12345
C6
BATT
-CO
NN-5
PJ5
05
3711
-006
037
1%
10R9
20K
R528
R34
10K
nost
uff
1%
nost
uff
10R8
R3 10K
10K
R37
25V
D2 B340
Ano
stuf
f1
2
C24
1000
nF
1%10R56
nost
uff
C533
1nF
50V
8.2u
HL5
00
PCM
B063
T-8R
2MS
47K
R28
1%
22R527
G_C
HG
3.3
R26
50V
C530
1nF
3D
G 1S
2
25VC5
0310
00nF
Q4
RHU0
02N0
6
G_C
HG
G_C
HG
VREF
VDC
R508
0.02
1W 1%
Q9
SI23
07BD
S-T1
-E3
D3
1G
2S
B4 BLM
18PG
181S
N1
nost
uff
R544
1%300K
R11
150K
1%
R509470K
VREF
C5354700nF-X5R25V
BGAT
E
BGAT
E
25V
C510
C538100nF25V
4700
nF-X
5R
PGND
16PH
ASE
18SG
ATE
29TH
ERM
15UG
ATE
9VA
DJ
4VC
OM
P
VDD
2613VD
DP
6VR
EF
CSIP
22CS
ON
21CS
OP
25DC
IN
24DC
PRN
28DC
SET
1EN
10G
ND
5IC
M
ICO
MP
3
12LG
ATE
11
8AC
LIM
23AC
PRN
27AC
SET
17BG
ATE
14BO
OT
2CE
LLS
7CH
LIM
CSIN
2019 P3
.3V_
MIC
OM
U2 ISL6
256A
HRZ-
T
1203
-004
471
G_C
HG
100n
FC5
31
25V
R57
10 1%
1%
VREF
nost
uff
475K
R35
BAT3
_SM
DATA
#KB
C3_S
MDA
TA#
BAT3
_SM
CLK#
KBC3
_SM
CLK#
BAT3
_DET
ECT#
BAT3
_SM
CLK#
BAT3
_SM
DATA
#
KBC3
_CHG
EN
KBC3
_PRE
CHG
ADT3
_SEL
#
ADT3
_SEL
#
KBC3
_CHG
2000
8-53
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
53 o
f 55
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RSEX
CEPT
AS
AUTH
ORIZ
ED B
Y SA
MSUN
G.
48.05 mm
Odd
Pin
s : T
op s
ide
1
B
1
SAM
SUNG
PRO
PRIE
TARY
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
4 4
A
Min
i PCI
Exp
ress
Car
d
A
B
C
23
SA
MS
UN
GEL
ECTR
ONI
CS
50.95 mm
32
DD
Pin
1
30.0
0 m
m
C
Top
WLA
N, 7
mm
Even
Pin
s : B
otto
m S
ide
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
0.01
2nF
C232
50V
R634 10K 1%
P3.3
V
36
WAK
E*1
20W
_DIS
ABLE
*
R202
10K
1%
43RS
VD_1
545
RSVD
_16
47RS
VD_1
749
RSVD
_18
51
RSVD
_25
SIM
_CLK
_C3
12SI
M_D
ATAI
O_C
710
SIM
_RES
ET_C
214
SIM
_RSV
D_C4
19SI
M_R
SVD_
C817
SIM
_VCC
_C1
8
SIM
_VPP
_C6
16
SMB_
CLK
30 32SM
B_DA
TA
USB_
D+38
USB_
D-
P1.5
V_2
48P1
.5V_
3
2P3
.3V_
1
52P3
.3V_
2
24P3
.3V_
AUX
PERN
023
PERP
025
PERS
T*22
PETN
031
PETP
033
REFC
LK+
13RE
FCLK
-11
RSVD
_13 37
RSVD
_11
RSVD
_12
39RS
VD_1
341
RSVD
_14
40
GND
_12
50
GND
_29
GND
_315
GND
_418
GND
_521
GND
_626
GND
_727
GND
_829
GND
_934
LED_
WLA
N*44
LED_
WPA
N*46
LED_
WW
AN*
42 53M
NT1
MNT
2546
P1.5
V_1
28
MIN
ICAR
D-52
PJ5
16
3709
-001
470
7CL
KREQ
*
4G
ND_1
GND
_10
35
GND
_11
R595
0
R666
0
R236
0
0R636
P3.3
V
LENG
TH
HEAD
DIA
M50
2
R635
0
0R6
65
3D
G 1S
2
P3.3
V
P3.3
V
P3.3
V
Q26
RHU0
02N0
6
100n
FC2
10
P3.3
V
6.3V
C211
1000
0nF
100n
FC1
87C1
8810
0nF
6.3V
C189
1000
0nF
0R633
DIA
HEAD
LENG
TH
R664
M50
3
0
10V100nFC212
P3.3
V_AU
X
0R2
37
WLO
N_LE
D#
KBC3
_RFO
FF#
SIM
3_C7
DATA
SIM
3_C2
RST
SIM
3_C4
DET
KBC3
_RFO
FF#
SIM
3_C1
VCC
SIM
3_C6
VPP
SIM
3_C3
CLK
USB3
_P2-
USB3
_P2+
SMB3
_CLK
SMB3
_DAT
A
PEX1
_MIN
IRXN
1PE
X1_M
INIR
XP1
PLT3
_RST
#
PEX1
_MIN
ITXN
1PE
X1_M
INIT
XP1
CLK1
_MIN
IPCI
ECL
K1_M
INIP
CIE#
MIN
3_CL
KREQ
#
8-54
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
54 o
f 55
PLL
BASE
CLO
CK S
ELEC
TIO
N
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.
2
Low
Enab
le
3
P3.3
V_M
CD d
istan
ce b
etwe
en R
5U88
0 an
d so
cket
sho
uld
be le
ss th
an 2
inch
es
DO N
OT D
ISCL
OSE
TO O
R DU
PLIC
ATE
FOR
OTHE
RS
D
4
B
Conn
ecte
d to
GND
4
C
Conn
ecte
d to
VCC
3
1
12M
Hz
ELEC
TRO
NICS
2
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
D
40m
il pat
tern 1
SD W
rite
Prot
ec S
elec
tion
40m
il pat
tern
SA
MS
UN
G
SAM
SUNG
PRO
PRIE
TARY
Conn
ecte
d to
VCC
C A
High
Ena
ble
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
MSE
L5
MSE
L7
48M
Hz
40
mil t
race
for m
edica
car
d so
cket
gro
und
Conn
ecte
d to
GND
B A
1%R2
0549
.9
C233
10V
100n
FP3.3
V_M
CD
0.01
nF
nost
uffP3
.3V_
MCD
50V
0.5p
F
C629
10V
100n
FC6
32
1%R2
0349
.9
nost
uff
0.01
nFC2
14
50V
0.5p
F
nost
uff
10V
2200
nFC2
34
0.01
nFC6
280.
5pF
50V
1MR1
801%
nost
uff
10V
C191
100n
F
1%33
R637
REXT
SDCD
#21
SMCD
#19
V18
13
VCC
3
VDD
1VD
DH14
VDD_
U10
XDCD
#22
XI7
XO8
DP GND
6G
NDH
17
GND
_U9
GND
_VDD
48
GPO
N629
MS_
INS
18
NC_1
11NC
_212
READ
ER_E
N16
RESE
T#47 2
CFD5
_SDD
135
CFD6
_SDD
236
CFD7
_SDD
337
CFD8
_SDD
4_XD
D038
CFD9
_SDD
5_XD
D139
CFRD
#_XD
CE#
25CF
RESE
T_XD
WR#
23CF
WR#
_XDR
D#24
CFW
T#46
5DM
4
CFD0
_MSD
0_SD
CMD
30
CFD1
0_SD
D6_X
DD2
40CF
D11_
SDD7
_XDD
341
CFD1
2_XD
D442
CFD1
3_XD
D543
CFD1
4_XD
D644
CFD1
5_XD
D745
CFD1
_MSD
1_XD
WP#
31CF
D2_M
SD2_
SDW
P32
CFD3
_MSD
3_XD
RB#
33CF
D4_S
DD0
34
U10
AU63
71
0904
-002
225
CARD
_PO
WER
15
CFAD
0_SD
CLK_
MSB
S28
CFAD
1_M
SCLK
_XDC
LE27
CFAD
2_XD
ALE
26
CFCD
#20
50V
MNT
315
MNT
4
4VD
D
VSS1
3 6VS
S2
11W
P
0.01
8nF
C236
10CDCD
_DAT
A315
CLK
CMD
2
DATA
07
DATA
18
DATA
29 12
MNT
113
MNT
214
EDG
E-SD
-11P
JMUL
TI1
3709
-001
526
1000
nF-X
5RC1
906.
3V
5%R1
8133
0 47K
R146
1000
nF-X
5RC6
30
6.3V
100n
FC6
31 10V
12M
Hz
1
2
100n
FC2
13
Y2
2801
-004
666
10V
1%R2
0649
.9
R204
49.9
1%
P3.3
V
1%
150K
R638
1%10K
R179
10V
C633
100n
F
C235
0.01
8nF
50V
0no
stuf
fR1
82
USB3
_P1+
PLT3
_RST
#
MCD
3_SD
DAT1
MCD
3_SD
DAT3
MCD
3_SD
WP
CLK3
_FM
48
MCD
3_SD
CMD
MCD
3_SD
DAT1
MCD
3_SD
DAT2
MCD
3_SD
DAT3
MCD
3_SD
DAT0
MCD
3_SD
CLK
MCD
3_SD
CD#
MCD
3_SD
WP
MCD
3_SD
DAT0
MCD
3_SD
DAT2
MCD
3_SD
CD#
USB3
_P1-
MCD
3_SD
CLK
MCD
3_SD
CMD
8-55
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
Sam
sung
Conf
iden
tial
SRP
Shee
t Num
ber:
55 o
f 55
POWERSIGNAL 3
2
B
1
ELEC
TRO
NICS
SAMS
UNG
ELEC
TRON
ICS
CO’S
PRO
PERT
Y.DO
NOT
DIS
CLOS
E TO
OR
DUPL
ICAT
E FO
R OT
HERS
C
DD
4SA
MSU
NG P
ROPR
IETA
RY
2
THIS
DOC
UMEN
T CO
NTAI
NS C
ONFI
DENT
IAL
PROP
RIET
ARY
INFO
RMAT
ION
THAT
IS
EXCE
PT A
S AU
THOR
IZED
BY
SAMS
UNG.
1
SA
MS
UN
G
SATA
HDD
CO
NN
SATA
I/F
CONN
AAB
C
4
3
50V
6.3V
nost
uff
C543
1nF
1000
0nF
C557
6.3V
C556
1000
0nF
10V
C555
100n
F10
0nF
C554
10V
10V
C542
100n
F
nost
uff P5
.0V10
000n
FC5
45
6.3V
10V
100n
FC5
44
P3.3
V
TX+
S6S5TX
-S4 S7
GND
3
P4G
ND4
GND
5P5 P6
GND
6
GND
7P1
0
GND
8P1
2
M1
MNT
1M
NT2
M2
P11
RESE
RVE
RX+
S2 S3RX
-
P13
12V_
112
V_2
P14
P15
12V_
3
3.3V
_1P1
3.3V
_2P2 P3
3.3V
_3
5V_1
P75V
_2P8 P9
5V_3
S1G
ND1
GND
2SA
T1_T
XN0
SAT1
_RXN
0
SAT1
_TXP
0
SAT1
_RXP
0
3710
-002
736
JHDD
500
HDD-
22P-
SMD
8-56
8. Block Diagram and Schematic
- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 -
- This Document can not be used without Samsung's authorization -
NC10
Samsung
Confidential
Inde
x_Pa
ge08
/21/
108
17:5
6:36
1Sh
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---- R
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---- R
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Roo
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--- R
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Roo
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4 ---
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Roo
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--- R
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6 ---
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Roo
t[she
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--- R
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8 ---
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Roo
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--- R
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Roo
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--- R
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2 ---
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Roo
t[she
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------
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--- R
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4 ---
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CK_
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5M_I
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5 ---
------
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The
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2[sh
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6 ---
------
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SOD
IMM
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2[sh
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7 ---
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SPI
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S_RO
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6Mbi
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------
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--- P
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MIC
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--- U
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USB
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4 ---
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MIO
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KBD
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Conn
[shee
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------
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--- T
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pad_
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shee
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------
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--- L
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witch
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8 ---
------
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LID
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tch[sh
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9 ---
------
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PW
R_M
emor
y[sh
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0 ---
------
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PW
R_M
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shee
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PW
R_M
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3 ---
------
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Min
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--- M
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SAT
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