rd alfa microelectronics

16
Electronic Products 2013 CATALOG

Upload: lev-lapkis

Post on 20-Mar-2016

249 views

Category:

Documents


4 download

DESCRIPTION

2013 Electronic Products Catalog. Founded in 1962 RD ALFA Microelectronics was a pioneer in electronic technology. Experience and expertise in the field of analogue and analogue to digital technology (Bi-polar, Bi-FET, complementary Bi-polar, CMOS, and Bi-CMOS)

TRANSCRIPT

Page 1: RD ALFA Microelectronics

Electronic Products2013 CATALOG

Page 2: RD ALFA Microelectronics

This is a reference-only edition. JSC RD ALFA mikroelektronikas departaments reserves the right to change design of devices and amend specifications without prior notice. References to other manufacturers' products are solely for convenience and do not imply the total equivalency of design, performance, technology, etc. Please send your suggestions for improvement of the content and form of the information rendered herein to the Information Department where they will be gratefully accepted, considered and taken into account in further editions.

Quality Policy 3

Illustration Of Standard Process Flow 4

Overview 5

Reference Data – Parametric Summary 7

Package Outlines 11

Latvia in the space industry 15

Contacts 16

Our address: JSC RD ALFA mikroelektronikas departaments240 Maskavas StreetRiga, LV-1063Latvia

Tel. (+371) 67109400Fax (+371) 67109498E-mail: [email protected]

TABLE OF CONTENTS About us

RD ALFA Microelectronics develops and manufactures certified high reliability and radiation hardened microelectronics components for aerospace and defense equipment as well as video transmission/CCTV components.

The company is the legal successor of the Riga Institute of Micro-devices combined with the manufacturing resource known as Invertor. Both were part of ALFA, the famous East European micro-electronic group. Between 1960 and 1985 ALFA was the East European leader in Analog and Analog-Digital micro-electronics.

Founded in 1962 the company was a pioneer in electronic technology. The Institute and the factory specialists accumulated significant experience and expertise in the field of Analog and Analog to Digital technology (Bi-polar (Bi), Bi-FET, complementary Bi, CMOS, and Bi-CMOS), and the design and testing of microcircuits. Today this scientific and industrial potential is largely maintained at RD Alfa Microelectronics.

Page 3: RD ALFA Microelectronics

3

QuALiTy POLiCyJSC RD ALFA mikroelektronics (hereinafter – RD ALFA Microelectronics) specialises in the development and production of electronic engineering products (EEP) in the field of microelectronics. Such products include cased and uncased microcircuits of the following functional types:

Operating amplifiers; Comparators; Amplifiers; Transistor pairs; Analogswitches; Sample and hold circuits; Special purpose microcircuits. A quality management system (QMS) has been developed and implemented at RD ALFA Microelectronics; it conforms to the requirements of the International Standard ISO 9001 and the National Standard of the Russian Federation (RF) – GOST P ISO 9001. Conformity of our QMS to the requirements of the ISO 9001 standard is confirmed by the Certificate CH05/0392 issued by the international auditing company SGS (Société Générale de Surveillance), Zurich, Switzerland, which is represented in Latvia by SGS Latvija Ltd. Conformity of our QMS to the requirements of the standard GOST R ISO of RF is confirmed by the Certificate No СВС.01.431.0316.11 issued by the QMS Certification Authority of the branch of FSI (Federal State Enterprise) 46 CRDI (Central Research and Development Institute) of the Ministry of Defence of Russia. This certificate gives RD ALFA the right to develop, produce and deliver microcircuits for enterprises in the Russian Federation. The QMS is described in detail in the main standard of RD ALFA Microelectronics UST RDm 02 QMS*. Quality Manual. The policy of RD ALFA in the field of quality is stated in a separate documentVD RDm 01** and is revised every three years.The management representative responsible for quality issues is the Deputy General Director for Quality, Valery Kotkin.The technical capabilities of EEP produced by our Enterprise can be found in the Catalog. *UST – Uznemuma standarts (LV) – Enterprise standard**VD – Vadibas dokuments (LV) – Guidance document

Page 4: RD ALFA Microelectronics

www.rdalfa.eu

iLLuSTRATiON OF STANDARD PROCESS FLOW

Shows the quality assurance procedures

Page 5: RD ALFA Microelectronics

5

ANALOG iNTEGRATED CiRCuiTS OverviewPart Аnalog Function High

RadHardPackage

αRD101SH5U LM101

Operational Amplifier

8,77x10Е4

TO-5

αRD101ASH5U LM101A 8,77x10Е4αRD740ASH5U µA740 8,77x10Е6αRD740BSH5U µA740 8,77x10Е6αRD513ASH5S AD513 8,77x10Е5αRD513BSH5S AD513 8,77x10Е5αRD083ASH5S TL083 8,77x10Е5αRD083BSH5S TL083 8,77x10Е5αRD843SH5S AD843 High Slew Rate Wideband

Operational Amplifier8,77x10Е4

αRD843ASH5S AD843 8,77x10Е4αRD148TН5U LM148

Quad Operational Amplifier

8,77x10Е4 14-lead flat metal – glassαRD148TF5U LM148 8,77x10Е4 14-lead flat metal-ceramicαRD148UF5U LM148 8,77x10Е4 CQCC2-N20-K4αRD148RF5U LM148 8,77x10Е4 CDIP-14αRD149TH5U LM149 8,77x10Е4 14-lead flat metal – glassαRD149TF5U LM149 8,77x10Е4 14-lead flat metal-ceramicαRD149UF5U LM149 8,77x10Е4 CQCC2-N20-K4αRD149RF5U LM149 8,77x10Е4 CDIP-14αRD2020АSH5S EL2020

Operational Amplifier Current Feedback

8,77x10Е4TO-5

αRD2020ВSH5S EL2020 8,77x10Е4αRD2020АRF5S EL2020 8,77x10Е4

CDIP-8αRD2020ВRF5S EL2020 8,77x10Е4αRD148TF5S LM148 Quad Operational Amplifier 8,77x10Е4 14-lead flat metal – glass

αRD1486АTF5S -Programmable Quad Operational Amplifier

8,77x10Е4 16-lead flat metal-ceramic

αRD3078SH5U СА3078S

Operational Amplifier

8,77x10Е4 TO-8αRD3078NK5S СА3078S 8,77x10Е4

Spider die configuration

αRD709АNK5S µA709 8,77x10E6αRD709ВNK5S µA709 8,77x10Е6αRD709АNL5Т µA709 8,77x10Е6αRD7405NK5SαRD7403NK5S - 8,77x10Е5αRD101АNK5S LM101A 8,77x10Е5αRD2700АSН5U

НА2700

8,77x10Е3TO-5

αRD2700ВSН5U 8,77x10Е3αRD2700АUF5U 8,77x10Е3

16-lead flat quad metal – ceramicαRD2700ВUF5U 8,77x10Е3αRD2700АNL5S 8,77x10Е3 Spider die configurationαRD2700BNL5S Operational Amplifier 8,77x10Е3 Spider die configurationαRD2520SН5U HA2520

High Slew Rate Operational Amplifier

8,77x10Е4 TO-5αRD2522SН5U HA2522 8,77x10Е4αRD2520UF5U HA2520 8,77x10Е4

16-lead flat quad metal – ceramicαRD2522UF5U HA2522 8,77x10Е4αRD2520UF5U HA2520 8,77x10Е4 CQCC2-N20-K4αRD2522UF5U HA2522 8,77x10Е4αRD1544АSН5U

-

8,77x10Е4 TO-5αRD1544ВSН5U 8,77x10Е4αRD1544АNL5Т 8,77x10Е4 Spider die configurationαRD1544ВNL5Т 8,77x10Е4

Operational Amplifier

Page 6: RD ALFA Microelectronics

www.rdalfa.eu

ANALOG iNTEGRATED CiRCuiTS OverviewSample and Hold Circuit

Amplifier

Comparator

Transistor pair

Part Аnalog Function High RadHard

Package

αRD1486ВTF5S - Sample and hold circuit used together withαRD1486АTF5S

8,77x10Е4 16-lead flat metal-ceramic

Part Аnalog Function High RadHard

Package

αRD960ATH5U TDA960 Low Bias Operational Amplifier 8,77x10Е5 14-lead flat metal – glass

αRD960BTH5U TDA960 Low Bias Operational Amplifier 8,77x10Е5 14-lead flat metal – glass

αRD960CTH5U TDA960 Low Bias Operational Amplifier 8,77x10Е5 14-lead flat metal – glass

Part Аnalog Function High RadHard

Package

αRD1121TF5S - Quad Voltage Comparators 8,77x10Е5 16-lead flat metal-ceramic

αRD11351TF5U -

Voltage Comparators

8,77x10Е6αRD11351NL5T - Spider die configurationαRD11352TF5U - 16-lead flat metal-ceramicαRD11352NL5T - Spider die configurationαRD111SH5U LM111 8,77x10E4 TO-5αRD710TН5U LM710/883 8,77x10E5 14-lead flat metal – glassαRD710NL5T LM710/883 8,77x10E5 Spider die configuration

Part Аnalog Function High RadHard

Package

αRD2713АNK5U

SA2713

Transistor Pair

8,77x10Е5

Spider die configuration

αRD2713BNK5UαRD2713CNK5UαRD2713DNK5UαRD2713ENK5UαRD2713FNK5UαRD2713КNK5UαRD2713LNK5UαRD2713ASH5U

TO-5

αRD2713BSH5UαRD2713CSH5UαRD2713DSH5UαRD2713ESH5UαRD2713FSH5UαRD1129ВSH5U

- 8,77x10Е6αRD1129ВNL5USpider die configuration

αRD1129ВNK5U

Page 7: RD ALFA Microelectronics

7

Analog SwitchPart Аnalog Function High

RadHardPackage

αRD1800TF5S HI-1800 Quad MOP Analog Switch

8,77x10E4 16-lead flat metal-ceramic

αRD509TF5S HI-509A 8- channel CMOS Analog MUXsαRD303TF5S HI-303

Dual, SPDT CMOS Analog SwitchαRD303NK5S HI-303αRD201TF5S HI-201/883

Quad SPST, CMOS Analog Switch

αRD508TF5S HI-508A8-channel CMJS Analog Multiplexers

αRD5048TF5S HI-5048Quad SPST, CMOS Analog Switch

αRD5002АTF5S SD5002 High Speed, Quad SPST, CMOS Analog SwitchαRD5002BTF5S SD5002

αRD5051TF5U HI-5051 Dual CMOS Analog SwitchαRD201HTF5U HI-201HS High Speed Quad Analog Switch

Operational Amplifier

ANALOG iNTEGRATED CiRCuiTS Reference Data – Parametric Summary

Part Temp. °С

Electrical Specifications

Power Supply, V

Input Offset Voltage, mV

Supply Current, mА

Input Bias Current, nА

Input Offset Current nA

Voltage Gain,V/mV

Slew Rate,V/µs

αRD101SH5U -60 to +125 15 ± 10% 2 2 75 10 80 0,5

αRD101ASH5U -60 to +125 15 ± 10% 2 2 75 10 80 0,5αRD740ASH5U -60 to +125 15 ± 10% 15 3,5 0,05 0,02 100 5αRD740BSH5U -60 to +125 15 ± 10% 30 3,5 0,1 0,05 100 2αRD513ASH5S -60 to +85 15 ± 10% 50 8 0,5 0,2 50 50αRD513BSH5S -60 to +85 15 ± 10% 25 8 0,5 0,2 50 50αRD083ASH5S -60 to +85 15 ± 10% 50 5 0,3 0,15 25 10αRD083BSH5S -60 to +85 15 ± 10% 15 10 0,3 0,15 25 25αRD148TF5S αRD148TH5S

-60 to +85 12 ± 15% 5 4,6 100 25 50 0,2

αRD148RF5U αRD148TH5U αRD148TF5U αRD148UF5U

-60 to +125 15 ± 10% 5 4,6 100 25 50 0,2

αRD149TF5U αRD149TH5UαRD149RF5U αRD149UF5U

-60 to +125 15 ± 10% 5 4,6 100 25 50 2

αRD1486ATF5S -60 ÷ +85 ± 12,7 ± 980 (Output)

1410000 (Low)100 (High)

40

αRD3078SH5U -60 to +125 6 ± 10% 5 0,28 400 150 5 0,12αRD3078NK5S -60 to +85 6 ± 10% 7 0,7 400 150 4 0,1

Page 8: RD ALFA Microelectronics

www.rdalfa.eu

ANALOG iNTEGRATED CiRCuiTS Reference Data – Parametric Summary

Amplifier Part Temp. °С Electrical Specifications

Power Supply, V

THD % Supply Current, mА

Voltage Gain,V/mV

ΔA’vol,Avol,%

ΔAvol,Avol,%

αRD960ATH5U -60 to +125 6 ,3 ± 10% 2 15 0,3-0,5 ± 10 -5 to +25

αRD960ВTH5U -60 to +125 6 ,3 ± 10% 2 15 0,10-0,35 ± 10 -5 to +20αRD960СTH5U -60 to +125 6 ,3 ± 10% 2 15 0,03-0,12 ± 10 -5 to +20

Sample and hold circuit Part Temp. °С Electrical Specifications

Pow

er S

uppl

y, V In

put O

ffse

t Vo

ltag

e, m

V

“HO

LD”

Ste

p, m

V

Inpu

t Bia

s C

urre

nt, µ

A

Sup

ply

Cur

rent

, m

А

Acq

uisi

tion

Tim

e, µ

s

Tran

sfer

co

nsta

nt in

sa

mpl

ing

mod

e fo

r ev

ery

chan

nel

Diff

eren

ce

Inpu

t Off

set

Volt

age,

mV

Diff

eren

ce

Tran

sfer

Rat

io

αRD1486ВTF5S -60 to +85± 12,7 ± 9

15 10 15 21 0.3 0.95÷1.05 70.975÷ 1.025

Operational Amplifier Part Temp. °С

Electrical Specifications

Power Supply, V

Input Offset Voltage, mV

Supply Current, mА

Input Bias Current, nА

Input Offset Current nA

Voltage Gain,V/mV

Slew Rate,V/µs

αRD709АNK5S -60 to +85 15 ± 10% 5 4,5 700 300 20-80 0,06αRD709BNK5S -60 to +85 15 ± 10% 2,5 4,5 1500 700 12-80 0,06αRD709АNL5Т -60 to +100 15 ± 10% 5 4,5 700 300 20-80 0,06αRD7403NK5S -60 to +85 6 ,3 ±10% 7 4,5 5000 1500 0,8-4 0,2αRD7405NK5S -60 to +85 15 ± 10% 5 3 500 200 50 0,75αRD843SH5S -60 to +85 15 ± 10% 2 13 0.8 0.03 15 160αRD2700АSН5U αRD2700АUF5U

-60 to +125 15 ± 10% 3 0,12 20 10 150 10

αRD2700ВSН5U αRD2700ВUF5U

-60 to +125 15 ± 10% 3 0,12 40 20 100 10

αRD2700ANL5S -60 to +85 15 ± 10% 3 0,12 20 10 150 10αRD2700ВNL5S -60 to +85 15 ± 10% 3 0,12 40 20 100 10αRD2520SН5 αRD2520UF5U

-60 to +125 15 ± 10% 9 7 225 30 8 80

αRD2522SН5 αRD2522UF5U

-60 to +125 15 ± 10% 9 7 300 50 7,5 60

αRD1544АSН5U -60 to +125 15 ± 10% 6 7 1200 300 8 400αRD1544ВSН5U -60 to +125 15 ± 10% 6 7 1200 300 8 200αRD1544АNL5Т -60 to +100 15 ± 10% 6 7 1200 300 7 400αRD1544ВNL5Т -60 to +100 15 ± 10% 6 7 1200 300 7 200αRD2020АRF5S -60 to +85 15 ± 10% 5 7,5 15 1 6 450αRD2020ВRF5S -60 to +85 15 ± 10% 8 7,5 20 1 6 350

Page 9: RD ALFA Microelectronics

9

Comparator

Transistor PairPart Temp. °С Electrical Specifications

ICBO, nА

IEBO,nА

ICBS,nА

IT1T20,nА

h21EA

h21E1h21E2

|h21E| |UEB1 –UEB2|, mV

Δ|UEB1 –UEB2|,mV

αRD2713АNK5U -60 to +125 20 50 50 10 30-90 0,90 2,5 3 2

αRD2713BNK5U -60 to +125 20 50 50 10 60-180 0,90 3,5 3 2αRD2713CNK5U -60 to +125 20 50 50 10 80 0,92 4,5 3 2αRD2713DSH5U -60 to +125 20 50 50 10 30-90 0,80 2,5 10 6αRD2713ESH5U -60 to +125 20 50 50 10 60-180 0,80 2,5 10 6αRD2713FSH5U -60 to +125 20 50 50 10 80 0,80 2,5 10 6αRD2713КSH5U -60 to +125 20 50 50 10 40-160 0,90 2,5 3 2αRD2713LSH5U -60 to +125 20 50 50 10 40-160 0,80 2,5 10 6αRD1129ВSH5U -60 to +125 10 30 30 10 80-360 0,90 2,5 3 2αRD1129ВNL5U -60 to +125 20 50 50 10 80-600 0,90 4,5 3 2αRD1129ВNK5U -60 to +125 250 50 50 10 1400-600 0,90 4,5 3 2

αRD2713ASH5U -60 to +125 20 50 50 10 30-90 0,90 2,5 3 2

αRD2713BSH5U -60 to +125 20 50 50 10 60-180 0,90 2,5 3 2

αRD2713FSH5U -60 to +125 20 50 50 10 80 0,92 2,5 3 2

αRD2713DSH5U -60 to +125 20 50 50 10 30-90 0,80 2,5 10 6

αRD2713ESH5U -60 to +125 20 50 50 10 60-180 0,80 2,5 10 6

αRD2713FSH5U -60 to +125 20 50 50 10 80 0,80 2,5 10 6

Part Temp. °С

Electrical Specifications

Power supply, V

Input Offset Voltage, mV

Supply Current, mА

Input Bias Current, µA

Input Ofset Currents µA

Output high voltage, V

Output low voltage, V

Voltage Gain, V/mV

Propa-gation delay, ns

αRD1121TF5S -60 to +85±12 ±10% +5±10%

4 31; 16 2.5 0.9 2.4 0.4 20 120

αRD11351TF5U -60 to +12512±10% -6±10% +5±10%

6 14; 18 20 10 2.4 0.4 2 80

αRD11351NL5T -60 to +10012±10% -6±10% +5±10%

6 14; 8 20 10 2.4 0.4 2 80

αRD11352TF5U -60 to +125±15±10% +5±10%

5 12.7; 7.5 0.75 0.3 2.4 0.4 25 300

αRD11352NL5T -60 to +100±15±10% +5±10%

5 12.7; 7.5 0.75 0.3 2.4 0.4 25 300

αRD111SH5U -60 to +125 ±15±10% 3 5; -4 0.1 0.01 2.4 1 150 300

αRD710TН5U -60 to +125±12±5% +6±5%

3 6.3; 3.5 3 1 2.6 0.35 1.5 40

αRD710NL5T -60 to +100±12±5% +6±5%

3 6.3; 3.5 3 1 2.6 0.35 1.5 40

Page 10: RD ALFA Microelectronics

www.rdalfa.eu

Fast Analog Switch

Analog SwitchSupply Voltage Vcc = + 15V ± 10%

Part Temp. °С Electrical Specifications

Threshold Voltage,V

Leakage Current Drain-Source, nA

Leakage Current Source -Drain, nA

Leakage CurrentGate, nA

Drain-Source Resis-tance, Ohm (UGS=5B)

Drain-Source Resis-tance, Ohm(UGS=10B)

Rise Time, ns.

αRD5002АTF5S -60 to +85 0,1-2,0 50 50 100 70 45 3

αRD5002BTF5S -60 to +85 0,5-2,0 10 - 600 70 45 3

Part Temp. °С Electrical Specifications

Input leakage current, nA

Drain leakage current, nA

Supply current with input voltage low, µA

Supply current with input voltage high, µA

Input current with input voltage low, µA

Input current with input voltage high, µA

Turn-on time, ns

On-resist–ance, Ohm

αRD1800TF5S -60 to +85 70 70 20 400 1 1 0,5 100

αRD509TF5S -60 to +85 50 7015 (ICCL+) 10 (ICCL-)

1000 (ICCH+) 10 (ICCH-)

0,2 0,2 300 300

αRD303TF5S -60 to +85 70 7050 (ICCL+) 5 (ICCL-)

200 (ICCH+) 5 (ICCH-)

0,2 0,2150* 300**

75

αRD303NK5S -60 to +85 70 7050 (ICCL+) 5 (ICCL-)

200 (ICCH+) 5 (ICCH-)

0,2 0,2150* 300**

75

αRD201TF5S -60 to +85 70 7050 (ICCL+) 5 (ICCL-)

25 (ICCH+) 5 (ICCH-)

0,2 0,2 300 70

αRD508TF5S -60 to +85 50 7015 (ICCL+) 15 (ICCL-)

1000 (ICCH+) 1000 (ICCH-)

0,2 0,2 300 300

αRD5048TF5S -60 to +85 70 7025 (ICCL+) 5 (ICCL-)

200 (ICCH+) 5 (ICCH-)

0,2 0,2 300 30

αRD5051TF5U -60 to +125 50 5050 (ICCL+) 5 (ICCL-)

300 (ICCH+) 5 (ICCH-)

0,2 0,2 500 10

αRD201HTF5U -60 to +125 350 350 4000 4000 0,2 0,2 80 55 * - lead 9, 16 ** - lead 4, 5

*Please refer to our Web Site for full detailed Datasheets.

ANALOG iNTEGRATED CiRCuiTS Reference Data – Parametric Summary

Page 11: RD ALFA Microelectronics

11

PACKAGE OuTLiNES

CDiP-14

CDiP-8

Symbol Inches Millimetres

Min. Max. Min. Max.

A - 0,20 5

b1 0,04 0,06 1.03 1.53

b2 0,016 0,027 0.41 0.69

c1 0,009 0,015 0.22 0.38

D 0,739 0,773 18.77 19.63

E 0,279 0,296 7.08 7.53

e 0,098 2.5

eA 0,295 7.5

F 0,178 0,192 4.52 4.88

K 0,295 0,304 7.5 7.72

L - 0,153 - 3.88

Q 0,126 0,173 3.2 4.4

q1 0,024 0,071 0.6 1.8

s1 - 0,089 - 2.25

α 0 15° 0 15°

Symbol Inches Millimetres

Min. Max. Min. Max.

A - 0,20 - 5

b1 - 0,06 - 1.5

b2 0,016 0,027 0.41 0.69

c1 0,009 0,015 0.22 0.38

D 0.391 0.395 9.98 10.02

E 0.276 0.291 7.0 7.4

e 0,098 2.5

eA 0,295 7.5

F 0/177 0.193 4.5 4.9

K 0.283 0.299 7.2 7.6

L 0.128 0.147 3.26 3.74

Q 0.031 0.071 0.8 1.8

q1 0.094 0.122 2.4 3.1

s1 - 0.098 - 2.5

Page 12: RD ALFA Microelectronics

www.rdalfa.eu

PACKAGE OuTLiNES

14-Lead Metal-Ceramic

14-Lead Flat Metal – Glass

Symbol Inches Millimetres

Min. Max. Min. Max.

A - 0,642 - 16.3

b1 0,0043 0,0098 0.11 0.25b2 0,012 0,022 0.30 0.56c1 0,064 0,091 1.62 2.32c2 - 0,012 - 0.3D 0,252 0,276 6.4 7.0d1 0,0134 0,0394 0.34 1.0d2 0,049 1.25E - 0,287 - 7.3e - 0,049 - 1.25L 0,157 4.0

Symbol Inches Millimetres

Min. Max. Min. Max.

A - 0.091 - 2.3

b1 0,0043 0,007 0.11 0.18b2 0,012 0.017 0.30 0.43b3 - 0.028 - 0.7c1 - 0.049 - 1.25D - 0.295 - 7.5d1 0.024 0.031 0.62 0.8E 0.61 0.63 15.5 16.0K 0.24 0.26 6.1 6.5e - 0,049 - 1.25L 0,157 - 4.0 -

CQCC2-N20-K4Symbol Inches Millimetres

Min. Max. Min. Max.

A 0.063 0.075 1.61 1.91

B 0.342 0.358 8.87 9.09b1 0.022 0.028 0.57 0.71b2 0.045 0.055 1.15 1.39b3 0.195 0.205 4.96 5.20C - 0.320 - 8.13c1 0.067 0.083 1.71 2.11c2 0.045 0.055 1.15 1.39c3 0.077 0.093 1.96 2.36d1 45°x0.005 0.025 0.13 0.63d2 3x45°x0.030 0.050 0.77 1.27d3 0.007 0.011 0.18 0.28

Page 13: RD ALFA Microelectronics

13

16-Lead Flat Metal – Ceramic

16-Lead Flat Quad Metal – Ceramic

Symbol Inches Millimetres

Min. Max. Min. Max.

A - 0.110 - 2.8

B 0.358 0.370 9.1 9.4

b1 0.006 0.009 0.14 0.23

C 1.146 1.236 29.1 31.4

b2 0.012 0.018 0.3 0.45

D 0.433 0.457 11.0 11.6

E 0.437 0.472 11.1 12.0

e - 0,049 - 1.25

Symbol Inches Millimetres

Min. Max. Min. Max.

A - 0.118 - 3

B - 0.617 - 15.68

b1 0.006 0.097 0.14 0.2

b2 0.010 0.015 0.25 0.37

C 0.300 0.318 7.62 8.08

D - 0.633 - 16.08

E 0.284 0.302 7.22 7.68

e - 0.039 - 1.0

L 0.098 0.138 2.5 3.5

Page 14: RD ALFA Microelectronics

www.rdalfa.eu

PACKAGE OuTLiNES

TO-5Symbol Inches Millimetres Note

Min. Max. Min. Max.

A 6.00 6.22 0.236 0.244 -

Øb 0.41 0.48 0.016 0.019 13Øb1 0.41 0.53 0.016 0.021 13Øb2 0.41 0.61 0.016 0.024 -ØD 9.09 9.19 0.335 0.375 -ØD1 8.23 8.43 0.305 0.335 -Øe 0.200 5.08 -e1 0.100 2.54 -F 0.33 0.43 0.013 0.017 -k 0.69 0.86 0.027 0.034 -k1 0.69 1.14 0.027 0.045 14L 13.0 14.0 0.512 0.552 13L1 - 1.27 - 0.05 13L2 6.35 6.85 0.250 0.270 13Q 0.5 - 0.02 - - v 45° 45° 15β 45° 45° 15N 8 8 16

TO-8Symbol Inches Millimetres

Min. Max. Min. Max.

A 0.35 0.37 9.0 9.4

Øb 0.016 0.020 0.41 0.51ØB 0.197 5ØD1 0.305 0.335 8.23 8.43C 0.315 0.334 8.0 8.5D 0.169 0.185 4.3 4.7L 0.512 0.552 13.0 14.0α 15° 15°β 30 30°N 12 12

Page 15: RD ALFA Microelectronics

15

LATVIA IN THE SPACE INDUSTRY

αRD dddd a bc d f (d – number, a, b, c, f – letters), example: αRD147RF5UαRD – company sign ddd – arbitrary amount of numbers, corresponding to analogue or our product line seriesa – a group letter in the series (a, b, c,...)bc - package CDIP-14 – RF CDIP-8 – RH TO-5 – SH TO-8 - SH 14-Lead Flat Metal - Ceramic – TF

14-Lead Flat Metal – Glass – TH 16-Lead Flat Metal – Ceramic – TF CQCC2-N20-K4 – UF 16-Lead Flat Quad Metal – Ceramic – UF

N – plastic packaged - acceptance level ( Commercial=1/Industrial&Military=5/Space=7 )f - temperature range, °С (-60 to +85) – S (-60 to +100) – T (-60 to +125) – U

• There are strong traditions of Space Research in Latvia. The roots are found in the beginning of the last century in connection with the famous Friedrich Zander.• Historically Latvia has been strongly developed in two directions of space technologies– engineering and material sciences.• Since the 1950’s Latvian scientists have participated in more than a hundred world-level space programs. Key contributions have included the manufacture of the first satellite tel-escope and range finder, the produc-tion of isolation materials for soviet rockets, & other applications.

• Up to the collapse of the Soviet Union, Latvia took part in several significant space programs includ-ing: • Isolation material develop-ment for construction and launch of the first satellite “Sputnik – 1” (in 1957); • First manned flight to space in “Vostok-1” (Yuri Gagarin) the first human spaceflight in history (In 1961): • “LUNOKHOD” – robotic rover for investigation of the surface of the moon and obtaining images (in 1970); • “Buran” and its launch vehicle “Energy” - orbital vehicle program (Starting from 1988).

• Further Latvian space exploration and technology developments influ-enced by USSR space exploration policy. These have included devel-opment of geodesy science, (meas-urement and representation of the Earth) as well as military research policy.• This days RD ALFA Microelec-tronics works in co-operation with Latvian SpaceTechnologies Cluster and European Space Agency

Source * http://www.vatp.lv/sites/default/files/space_technologies_in_latvia.pdf

The Explanation of Integrated Circuit Designations.

Page 16: RD ALFA Microelectronics

www.rdalfa.eu

Sales & EnquiresuK phone: +44(0)208 123 1735LV phone: + 371 25411 199E-mail: [email protected]: r_maksimov Business Development Manager Europe David V JohnsonMob uK: +44(0)7831 197792Email: [email protected]: david-v-johnson

Contacts in Riga: RD Alfa microelectronics240 Maskavas street, Riga LV 1063, LatviaPhone: +371 67109 400, +371 67189 012Fax: +371 67109 498E-Mail: [email protected] Representative office in Moscow:LTD Alfa-LRRussia, 105120, Moscow,N.Siromjatnicheskaja 5/7, build 2Phone/Fax: +7 495 9833343E-mail: [email protected]: borisrd1Director: B.Bogdanov

Representative office in Minsk:LTD Alfa-BLRBelarus, 220018, Minsk,Sharganovicha street 19/577Phone/Fax: +375 17 2079889 Cellular: +375 29 6689889 E-mail: [email protected]:vladimirpalienkoDirector: В.Palienko

Distributor in Germany, Austria, Switzerland, Belgium, Netherlands and Denmark:KAMAKA Electronic Bauelemente Vertriebs GmbHulmer Strasse 130 D-73431 Aalen GermanyE-mail: [email protected]: +49 (0) 73 61 - 96 62-0Fax: +49 (0) 73 61 - 96 62-29www.kamaka.de

KAMAKA Sales Office NorthRobert-Bosch-Strasse 25D-25335 ElmshornGermanyE-mail: [email protected]: +49(0) 41 21 - 46 3 00Fax: +49(0) 41 21 - 46 39 01 Representative in USA:Electronic Business ExchangeContact Person: Mark Kozlovsky30W096 Willow LaneWarrenville, iL 60555uSAPhone: +1 6302934465Cellular: +1 6309134465Fax: +1 6302934492E-mail: [email protected]: mark.kozlovsky

www.rdalfa.eu