power gan gan – moving quickly into entirely new markets

POWER GaNGaN – Moving Quickly intoEntirely New Markets

ISSUE 4 – June 2014 www.power-mag.com

Also inside this issueOpinion | Market News | ISPSD 2014PCIM 2014 | Industry News | ProductsWebsite Locator

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CONTENTS

www.power-mag.com Issue 4 2014 Power Electronics Europe

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Editor Achim ScharfTel: +49 (0)892865 9794Fax: +49 (0)892800 132Email: [email protected]

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ISSN 1748-3530

PAGE 6

Market NewsPEE looks at the latest Market News and company developments

PAGE 10

ISPSD 2014

PAGE 12

PCIM 2014

PAGE 22

Industry News

1500 A Industrial Power Tester

Synchronous Regulator for Always-OnApplications

PAGE 32

ProductsProduct Update

PAGE 33

Website Product Locator

GaN – Moving Quicklyinto Entirely NewMarketsGallium Nitride (GaN) based power devices are rapidlybeing adopted due to their ability tooperate at frequencies and switching speeds beyondthe capability of Silicon power devices. With discreteGaN devices capable of switching at slew rates up to70 V/ns, the systemperformance is greatly impacted by aspects outsidethe active power devices, such as highspeed gate drivers and printed circuit board layout. Theintroduction of a new family of high performanceenhancement mode eGaN FETs offers the potential toswitch at higher frequencies and efficiency thanpossible with traditional Si MOSFET technology.Combined with an improved switching figure of meritand low parasitic packaging, the new devices also haveoptimized device pin-out to minimize parasitic PCBlayout inductance to fully utilize the device’s capability.Example buck converters operating at 10 MHz showexperimental peak efficiencies of over 89 %. Althoughthe results are impressive, there is still a significant losscomponent due to the current silicon gate driver. Tofully utilize the capability of the new high frequency,reduced size eGaN FETs, a focused improvement inthe gate driver structure is required, which in turn willallow a further increase in efficiency and switchingfrequency capability. In this article, the latest family ofhigh frequency enhancement mode Gallium Nitridepower transistors (eGaN FETs) is presented foruse in multi megahertz buck converters. These deviceswere designed to address high-frequency hard-switching power applications at higher voltages. More details on page 28.

Cover supplied by Efficient Power Conversion(EPC)/USA.

COVER STORY

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OPINION 5


Silicon Carbide for power semiconductors is inresearch for decades, in the year 2001 the firstproduct, a Schottky diode was launched. In 2006the first SiC switches (JFETs) and in 20101200/1700 V SiC MOSFETs were announced. Inthe meantime new MOSFET generations namelyby Cree and Rohm have been introduced, atPCIM 2014 Microsemi entered the SiC MOSFETarena. In addition to substantive performancegains, the SiC MOSFET has some other salientadvantages. For example, SiC MOSFETs contain arugged built-in body diode, which eliminates theneed for an external anti-parallel Schottky diode insome applications.

According to market researcher IMS/IHS SiCdiodes costs 5-7 x more than Silicon-basedSchottky diodes, SiC JFETs 4-7 x more than SiMOSFETs, and SiC MOSFETs up to 15 times morethan their Silicon-based equivalents. But at systemlevel cost parity with Silicon is the goal of the SiCvendors. The SiC power semiconductor market isestimated to $200 million in 2014 and couldbreak the $1.0 barrier by the year 2019. SiliconCarbide will definitely reshape the powerelectronics industry, especially with applicationson mid and high power side (> 1.2kV). SiC offershigher performances i.e. switching frequency,power density, junction temperature and voltagecapabilities. According to market researcher Yole,the SiC market, including both discrete devicesand modules, could reach $150 million+ in 2015and about $900 million in 2020, some moreconservative figures. This forecast partiallydepends on whether or not the automotiveindustry will adopt SiC by 2017-2018.

And this scenario could become a reality. Since2011 1200 V and higher voltage SiC MOSFETshave been fully released and these MOSFETs arecurrently being used in automotive for auxiliarypower supplies and off-board chargers connectedto three-phase power. 650 V to 900 V SiCMOSFETs in development are targeted at

automotive OEMs and Tier One suppliers as pre-released products in 2013-14 for primarily on-board drivetrain applications. End of May Toyotaannounced to implement SiC power devices intheir hybrid vehicles. Toyota has developed incollaboration with Denso SiC powersemiconductors for use in automotive powercontrol units (PCUs). Test driving vehicles fittedwith the new PCUs on public roads in Japan aplanned within a year. Through use of SiC powersemiconductors fuel efficiency in hybrid vehiclescan be improved by 10 percent and reduce PCUsize by 80 percent, Toyota underlined. SiC powersemiconductors have low power loss whenswitching on and off, allowing for efficient currentflow even at higher frequencies. This enables thecoil and capacitor, which account forapproximately 40 percent of the size of the PCU,to be reduced in size. However, PCUs account forapproximately 25 percent of the total electricalpower loss in HVs, with an estimated 20 percentof the total loss associated with the powersemiconductors alone. Thus huge loss and spacesavings can be achieved with the use of SiCpower semiconductors. Estimated impact ofCree’s novel 900 V SiC MOSFET on specificpower and power density in automotive tractioninverters at this early stage is limited, butdemonstrations elsewhere strongly suggest thepotential of obtaining high power densities (wellabove 20 kW/l) with very high (99 % peak)efficiency (see our cover story in PEE May 2014).

Our cover story in this issue tells another story– Gallium Nitride power semiconductors arerapidly being adopted due to their ability tooperate at frequencies and switching speedsbeyond the capability of Silicon power devices.With discrete GaN devices capable of switching atslew rates up to 70 V/ns, the system performanceis greatly impacted by aspects outside the activepower devices, such as high speed gate driversand printed circuit board layout. This year’s salesfigures are estimated by IMS/IHS to $50 millionto reach $1.0 billion by 2022. GaN technology isenabling entirely new applications. In this article,EPC explores GaN penetration in four of thesenew applications - envelope tracking, wirelesspower transfer, LiDAR, and satellites. We alsodiscuss GaN’s penetration in the original targetmarket, DC/DC conversion. The overall conclusionis that GaN is creating markets that are as large asthe markets where they are displacing their Siliconancestors. GaN devices are expected to re-enactthe famous Moore’s Law in the coming years,expanding beyond discrete transistors into avariety of integrated circuits with highperformance, low cost, and very high value. Thisdrives a “virtuous cycle” where each subsequentgeneration has increasingly higher performanceand lower cost, thus enabling even more new,unforeseen applications.

More on SiC/GaN and other topics of interestwithin the power electronics industry can befound in our PCIM Report as well as on the otherpages. Enjoy reading!

Achim ScharfPEE Editor

A Further Pushfor SiC/GaN at PCIM

05_PEE_0414_NEW_p05 Opinion 06/06/2014 10:23

6 MARKET NEWS

Issue 4 2014 Power Electronics Europe www.power-mag.com

Seven of the world’s top 10 solar module suppliersin 2013 have their headquarters or the bulk of theirmanufacturing operations in China, based on IHS(www.ihs.com) data of 150 leading PVcomponent manufacturers. Leading the way isChina’s Yingli Green Energy, which shipped 3.25GW of solar modules, followed by Trina Solar,Canadian Solar, Sharp and Jinko Solar. “The year2013 marked the turnaround of global PV marketsand the recovery of leading players in thephotovoltaic industry,” said Jessica Jin, analyst for thesolar supply chain at IHS. “Chinese and Japanese PVmodule suppliers benefited from the surge indemand in their domestic markets, with China inparticular accounting for more than a quarter ofglobal installations in 2013 and becoming theleading region in the process.” Despite thecontinued success of China, the country’sdominance of global module markets is showingtemporary signs of cracking as the overall marketshare of Chinese suppliers stagnated in 2013,remaining at nearly the same level as in 2012. Thiscomes in contrast to the Japanese, who managed toexpand their total share of market last year.Global PV module shipments grew overall by 24

% in 2013, reaching a total of 38.7 GW. But thetop 15 module suppliers expanded theirshipments by a noteworthy 43 % on average,which illustrates their solidifying hold on themarket. The combined market share last year of

Shift in PV Businessesthe top 15 equated to 59 %, up from 51 % in2012. The latest module-supplier rankings alsoreflect the current photovoltaic boom in Japan,which accounted for 17 % of global installations in2013. Both China and Japan are difficult to enterfor foreign companies. However, foreign suppliersin Japan have a better opportunity to sell modulesin that country through local partners, OEMproduction or distributors. Among the PV modulesuppliers, Chinese-based ReneSola more thantripled its shipments, while South Korea’s HanwhaQ-Cells and Japan’s Kyocera doubled shipmentscompared to 2012 levels. Two players - JA Solarfrom China and Solar Frontier from Japan - grewmuch faster than the market, with shipments foreach expanding by more than 60 %. The RECGroup from Norway defended its position as theleading module supplier headquartered in Europe,despite growing somewhat slower than the overallmarket. “Although the industry is witnessing a long-term trend to more regionalized PV production, thecurrent installation boom in China and Japan is

triggering capacity expansion in 2014,predominantly in China,” said solar analyst Stefande Haan.With many European PV inverter players looking

for new opportunities in the US to counteract theirailing business in Europe, the number of suppliersholding a significant share of the US marketincreased during the year. That, in turn, led to adecline in market share of the three largest PVinverter suppliers based in the States. Moreover,the US trailed Japan and China in growth last year.Although it remained among the three largestgrowth markets for PV inverters in 2013, the USincrease in revenue of 10 % was far behindJapans blistering expansion of 140 % and Chinasequally impressive rate of 100 %. Together thethree countries generated a total of $1.7 billionmore in revenue for 2013 than in the previousyear, despite global revenue declining by $60million. PV inverter revenue in 2013 from the US,China and Japan amounted to $4.1 billion lastyear, compared to $2.4 billion in 2012.

Dow Corning (www.dowcorning.com) announced that they haveestablished a higher industry standard for Silicon Carbide (SiC) crystal qualityby introducing a product grading structure that specifies new tolerances onkiller device defects, such as micropipe dislocations (MPD), threading screwdislocations (TSD) and basal plane dislocations (BPD). This new grading structure aims to optimize the range, performance and

cost of next-generation power electronic device designs fabricated on 100-mmSiC wafers, which the company now offers in three new tiers ofmanufacturing-quality substrates labeled Prime Standard, Prime Select andPrime Ultra. Each successive Prime Grade wafer tier offers tighter tolerancesfor defect density and other critical performance properties that allow toprecisely balance wafer quality and price, depending on the demands of theirspecific device applications. While many SiC substrate manufacturers promiselow micropipe densities, Dow Corning specifies low tolerances of other killerdefects, such as TSD and BPD. Such defects reduce device yields, and inhibitthe cost-efficient manufacture of large-area, next-generation power electronicdevices such as SiC MOSFETs with higher current ratings. The Prime Grade portfolio includes Prime Standard SiC wafers that

guarantee MPD of 0.5 cm-2 or less, offering an attractive option for balancingperformance and cost when designing simpler SiC power electroniccomponents, such as Schottky or Junction Barrier Schottky diodes, with low tomedium current ratings. Prime Select SiC wafers that deliver more stringenttolerances for MPD (≤0.2 cm-2) and BPD (≤800 cm-2), making them suitablefor more demanding SiC devices like pin diodes or switches. Prime Ultra SiCwafers enable design of high-power devices that require the highest crystalquality. SiC substrates in this tier deliver extremely low MPD (≤0.1 cm-2), BPD(≤500 cm-2), TSD (≤300 cm-2) and a tightened wafer resistivity distribution forthe design of today’s most advanced SiC power electronic devices. Theseinclude MOSFETs, JFETs, IGBTs, BJTs or pin diodes. In addition, the substrate

quality in this tier can benefit high-voltage (3.3 kV and higher) and high-current device designs. “We recognized that wide-bandgap semiconductortechnology must deliver much more than high quality alone – it must deliverexceptional overall value,” said Dow Corning’s CEO Gregg Zank. “Our new SiCwafer grading structure meets this need and is the result of our closecollaboration with the globe’s leading power electronics device manufacturers”.

Silicon Carbide will definitely reshape the power electronics industry,especially with applications on mid and high power side (> 1.2kV). SiCoffers higher performances i.e. switching frequency, power density, junctiontemperature and voltage capabilities. “Originally, the SiC industry began from a discrete device business and is

today moving into a power module business”, analyzed Kamel Madjour,technology and market analyst at Yole Développement (www.yole.fr) atPCIM. Initially, the first innovative companies started to implement hybridSi/SiC products (power modules, PV inverters...), then other playersreached the market with full-SiC modules. This trend will becomedominant in the coming years as integrators require SiC power modules inmost of their mid and high power systems. The SiC market, including bothdiscrete devices and modules, could reach $150 million+ in 2015 andabout $900 million in 2020. This forecast partially depends on whether ornot the automotive industry will adopt SiC by 2017-2018. More on SiC andGaN in our PCIM Europe 2014 report.

SiC Wafer Grading Structure for High Crystal Quality

Silicon Carbide Market Movesfrom Discretes to Modules

Market News_Layout 1 06/06/2014 10:42

MARKET NEWS 7

Infineon (www.infineon.com) is beginning to reap the fruits of 300-millimeterthin-wafer technology for power semiconductors, enabling it to achieve growthwith a substantially lower level of capital employed compared with 200-millimeter wafers. The level of investments required to increase manufacturingcapacities for power semiconductors in order to achieve the targeted growthrate is therefore decreasing.

With effect from the 2015 fiscal year, the company intends to reduce itstarget ratio of investments to revenue over the cycle from the current about 15percent to about 13 percent. Even with the reduced capital intensity, it will stillbe possible to achieve the targeted average revenue growth rate ofapproximately 8 percent p.a. over the cycle. “Infineon is determined to growfaster than its competitors. The fact that we will need to employ less capital infuture to achieve this, clearly demonstrates that we are on the right track withour manufacturing strategy”, stated Dr. Reinhard Ploss, CEO of InfineonTechnologies AG.

300 MillimeterWafers Pay Off

Infineon is thefirst tomanufactureMOSFETs andIGBTs on 300-millimeter Siliconwafers asdemonstrated byCEO ReinhardPloss Photo: AS

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8 MARKET NEWS


Transphorm (www.transphormusa.com) hasobtained a sole license to Furukawa Electric(Japan) extensive Gallium Nitride (GaN)power device portfolio that includesapproximately 40 US issued patents and 110Japanese issued patents. Transphorm alsohas certain rights to sublicense these patents. The licensed patents encompasses various

aspects of GaN power device manufacturing,materials and circuits, including key patentsfor GaN-on-Silicon epitaxial growthtechnology. As part of the agreement,

Furukawa Electric also made an equityinvestment in Transphorm. The deal bringsTransphorm’s total GaN IP portfolio to over300 US patents/applications and over 650worldwide patents/applications, including acombination of internally developed,acquired and licensed patents. “FurukawaElectric has conducted original GaN researchstarting from the 1990s and amassed astrong patent portfolio in GaN power devicesand materials,” said Takahide Kimura,Corporate Senior VP Furukawa Electric. “As

we sought to unlock the value of thisportfolio, as well as to secure a supply ofGaN products for our own applications, thiscompany appeared as an ideal choice.Additionally, we will have further technicalcollaboration with them as a strategicpartner, beyond this license and investment”.“As GaN power devices are now poised forrapid market penetration, a strongintellectual property position is essential togrowing the GaN business”, added RogerBorovoy, Transphorm’s IP counsel.

Transphorm licenses Furukawa GaN Patents

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MARKET NEWS 9

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Toyota (www.toyota.co.jp) has developed in collaboration with Denso a SiCpower semiconductor for use in automotive power control units (PCUs). Testdriving vehicles fitted with the new PCUs on public roads in Japan a plannedwithin a year.

Through use of SiC power semiconductors fuel efficiency in hybrid vehiclescan be improved by 10 percent and reduce PCU size by 80 percent. SiCpower semiconductors have low power loss when switching on and off,allowing for efficient current flow even at higher frequencies. This enables thecoil and capacitor, which account for approximately 40 percent of the size ofthe PCU, to be reduced in size.

PCUs play an important role in hybrids and other vehicles with an electrifiedpowertrain: they supply electrical power from the battery to the motor tocontrol vehicle speed, and also recuperate electricity during deceleration.However, PCUs account for approximately 25 percent of the total electricalpower loss in HVs, with an estimated 20 percent of the total loss associatedwith the power semiconductors alone. Therefore, a key way to improve fuelefficiency is to improve power semiconductor efficiency, specifically byreducing on-resistance. Since launching the “Prius” HV in 1997, Toyota hasbeen working on in-house development of power semiconductors and onimproving HV fuel efficiency.

As SiC enables higher efficiency than Silicon, Toyota and Denso began basicresearch in the 1980s, with Toyota participating from 2007 to jointly developSiC semiconductors for practical use. Toyota has installed the jointly developedSiC power semiconductors in PCUs for prototype HVs, and test driving on testcourses has confirmed a fuel efficiency increase exceeding 5 percent underthe JC08 test cycle. In December last year, Toyota established a clean room fordedicated development of SiC semiconductors at its Hirose Plant. Toyota ispositioning high efficiency power semiconductors as a key technology forimproving fuel efficiency for HVs and other vehicles with electrifiedpowertrains.

Toyota usesSiC inAutomobiles

Conventional PCU(upper) and SiCpowersemiconductorbased PCU in sizecomparisonSource: ToyotaToyota414


10 ISPSD 2014


ISPSD is the next forum on the calendar for technical discussion in all areas ofpower semiconductor devices and power integrated circuits. ISPSD’14 will beheld from June 15-19 at the vacation resort, Hilton Waikoloa Village, locatedon the Kohala Coast of the Big Island of Hawaii, and thus will perhaps ofinterest for those not able to attend APEC, CIPS, or PCIM. More than 400delegates are expected to take this opportunity. The conference features 110 technical presentations on novel GaN, SiC,

and Silicon power device concepts, process integration, device modeling,power ICs, packaging and integration, and power electronics applications. Avendor exhibition includes Azzurro Semiconductors AG (Germany), DCGSystems, FEI Company Japan Ltd., Marubun Corp., New Metal and ChemicalsCorp. Ltd., and TowerJazz Japan Ltd.

Three plenary talks by renowned experts on Power Architectures for Current and Future High Performance Computers,Dr. Paul Coteus, IBM Fellow, USA

Virtual Testing of High Power Devices at the Rim of Safe Operating Area andBeyond, Prof. Gerhard Wachutka, Munich University of Technology, Germany

Very High Power Converter Technologies, Dr. Shinzo Tamai, Senior Fellow,Toshiba Mitsubishi-Electric Industrial Systems Corporation (TEMIC), Japan

Six ‘short courses’ will provide an overview on the recent debates on Siliconversus SiC and GaN or their coexistence

Integrated voltage regulators: Bringing Moore’s Law Scaling to PowerElectronics, Prof. Ken Shepard, Columbia University

Computation and communications ICs demand an increasing number ofsupply voltages, due to heterogeneous circuitry and the need to dynamicallyadjust supply voltages to optimize power-performance trade-offs. Today, thedc-dc converters that deliver these supply voltage sit on the printed-circuitboard and are built from discrete components. This approach results in anever increasing fraction of board area (and cost) allocated to DC/DCconverters. Off-chip regulators are also slow to respond to changing loadrequirements. Because of these shortcomings, there is a growing interest inintegrating DC/DC converters. There are several approaches that can be taken,including package-level integration, 3D integration, and monolithic integration,all of which will be reviewed in this short course. Key to these efforts isreducing the physical size of the energy storage elements required for DC/DC

converters. This lecture will review recent advances in both switched-capacitorand switched-inductor converters. Integrated switched-inductor converters,which bring many advantages over switched capacitor designs, requireintegrated power inductors. The presentation will describe recent advancesthat allow power inductors to be integrated quite effectively in the far back-endof a conventional CMOS process.

Are SiC Switches Ready for High Power Industrial Applications?Dr. Ljubisa Stevanovic, GE Global Research

This short course describes challenges of expanding the adoption of SiCMOSFETs from technical (high density and high precision) applications, suchas aerospace, to high power industrial applications, including renewables.Typically, technical applications prioritize performance ahead of all otherrequirements, demanding higher switching frequency, power density andoperating temperature. The presentation describes SiC devices and powerpackaging that are designed to maximize performance in such applications.Industrial applications are less cost-tolerant and require higher reliability,preventing SiC from making significant inroads to date. While the device costcontinues to improve with volume and yield, it is necessary to unlocksignificant system-level savings in order to reach cost parity with Silicon-basedsolutions. Device/module reliability has been an even bigger challenge. With ahigh number of devices per module/converter, it is necessary to achievedevice failure rate below 10 FIT, while maximizing power output. There is noevidence that commercially available SiC switches have demonstrated such FITrates. Ongoing efforts to validate the device and package reliability will behighlighted, including accelerated stress testing, qualification per AEC-Q101and reliability growth testing. The presentation will conclude by highlightingmodule and converter-level test results as part of a megawatt-scale industrialconverter demonstration.

Heterogeneous Integration of GaN and Si CMOS: A Path to “Smart”Electronics, Dr. T. E. Kazior, Raytheon Integrated Systems

Advances in Silicon technology continue to revolutionize electronics. However,Si cannot do everything, and devices/circuits based on other material systemsare required. Can we take advantage of the maturity and integration density ofSi and integrate these ‘other’ devices with CMOS control circuitry to create

Another Power ElectronicsConference for Holidays on Hawaii

ISPD 2014_0414_Layout 1 06/06/2014 10:55

POWER ELECTRONICS RESEARCH 11


‘smart’ circuits that further enhance system performance? This short coursewill review different approaches for integrating dissimilar devices/materialswith Si CMOS Emphasis will be given to the successful integration of GaNHEMTs with Si CMOS on a common Silicon substrate using a process similarto a SiGe BiCMOS fabrication process. Using this approach, circuitperformance can be optimized by the strategic placement of highperformance GaN transistors adjacent to Si CMOS cells or in-situ controllers.The devices and subcircuits may be interconnected using standardsemiconductor on-wafer interconnect processes. This GaN – Si CMOSintegration process is capable of scaling to 200 mm diameter wafers to takeadvantage of existing Si foundry infrastructure and provide a cost effectivesolution. Thus, heterogeneous integration of GaN with Si CMOS may enable anew class ‘smart’ RF, mixed signal and power ICs.

Photovoltaic Systems: Technology trends and challenges through to2020, Dr. Asim Mumtaz, Enecsys Corporation

The short course will cover some of the latest market projections forphotovoltaic systems up to 2020. A review of the different architectures forphotovoltaic power systems will be presented, with some example topologies.The impact of SiC and GaN power devices and power packaging forperformance enhancement will be reviewed. In addition, potential areas forthe utilization of ASICs and ASSPs will be highlighted for cost reductionbenefits. The latest trends in photovoltaic modules and the changinglandscape of the grid utility requirements will also be analyzed. Thecommunication requirements for photovoltaic systems and the utilization of RFsemiconductors will be introduced.

Practical ESD Protection Design Technique: from High-Speed to High-Voltage, Prof. Albert Wang, University of California-Riverside

As semiconductor technologies continue to advance andICs become morecomplex to achieve better performance, ESD protection design has emergedas a major design challenge to IC designers. This is particularly true forcomplex mixed-signal ICs operating at high-speed and high-voltage. For high-speed ICs, the ESD-induced parasitic effects can severely affect ICperformance including speed, bandwidth and data rate. For complex high-voltage ICs, due to the multiple and high-voltage domains involved on a chip,accurate control of the ESD design window is essential and challenging. Theseemerging challenges call for accurate ESD design and ESD-IC co-designtechniques to ensure whole-chip ESD protection circuit design optimization,verification and prediction. This short course will present essential ESDprotection design techniques including ESD protection fundamentals, ESDprotection structures, ESD design window for high and low voltage, low-parasitic ESD protection designs for broad band and high-speed ICs, ESDprotection designs for multi-supply and high-voltage mixed-signal ICs, mixed-mode ESD protection circuit simulation design methods, and new ESD-IC co-design techniques. Real-world ESD protection design examples for high-speedand high-voltage ICs will be discussed.

Power Semiconductor Devices and Modules for Hybrid Vehicles,Dr. Kimimori Hamada, Toyota Motor Corporation

In this short course, the requirements for power semiconductor devices andmodules for hybrid vehicle automotive application will be presented.Foundational semiconductor device technologies utilized for existing automotiveapplications will be presented and power module structures and othersupporting packaging technologies will be discussed. Specific examples ofsimulation methodologies, measurement techniques and power system analysiswill be presented to demonstrate the technical evolution of power systems inhybrid vehicles. Through this short course, attendees will understand the specificrequirements and technologies required for expanding the presence of powerelectronics into a growing automotive application market segment. AS

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12 PCIM 2014 www.pcim-europe.com

Again Power Electronics Europe activelyparticipated within this event by co-sponsoring theBest Paper Award (BPA) as well as hosting a PanelDiscussion on the hot topic “SiC/GaN versusSilicon – Competition or Coexistence?”. The BPA(price money plus expenses for visiting PCIM Asia2015) was handed over on occasion of theopening ceremony by PEE Editor Achim Scharf(left) to Martel Tsirinomeny from LEI-EPFLLausanne, Switzerland.

PCIM Awards and PanelThe title of the winning paper: ConfigurableModular Multilevel Converter (CMMC) for aUniversal and Flexible Integrated ChargingSystem. Electric Vehicles owners are confrontedby the limited compatibility of available charging

infrastructures. Therefore, this paper is focused onpresenting a Configurable Modular MultilevelConverter (CMMC) for a universal and flexibleintegrated charging system. This concept isdesigned for a large range of charginginfrastructure; from AC household basic supply toAC or DC ultrafast charging. Also the three Young Engineer Awards have

been handed over to Hidekazu Umeda,Panasonic, Japan, for the paper ‘Highly EfficientLow-Voltage DC-DC Converter at 2 – 5 MHz withHigh Operating Current Using GaN Gate InjectionTransistors’, Gang Yang, Valeo, France, ‘HighEfficiency Parallel-parallel Interleaved LLC ResonantConverter for HV/LV Conversion in Electric/HybridVehicles’, and Vinoth Kumar Sundaramoorthy,ABB Switzerland, ‘Simultaneous Online Estimation

of Junction Temperature and Current of IGBTsUsing Emitter-auxiliary Emitter Parasitic Inductance’.PEE’s well accepted Panel Discussion

“SiC/GaN versus Silicon – Competition orCoexistence?” took place on the second day(May 21, 2.00-4.30 pm) in the Industry Forum.Silicon Carbide and more recently Gallium Nitridehave gained more and more interest by powerelectronics designers particularly for inverter andpower supply applications. But Silicon technologyis still moving forward. Thus the intention of thispanel discussion was to inform PCIM visitors aboutthe pros and cons of SiC and GaN in relation toprogress in Si also in certain applications such aspower supplies and renewable energies, aboutcompany-specific technologies and productroadmaps, and last but not least market trends.Thus the panel represented the leading companiesin Silicon, Silicon Carbide, Gallium Nitride as wellas Packaging Technologies. Silicon Carbide andmore recently Gallium Nitride have gained moreand more interest by power electronics designersparticularly for inverter and power supplyapplications. But Silicon technology is still movingforward. Thus the intention of this panel discussionwas to inform PCIM visitors about the pros andcons of SiC and GaN in relation to progress in Sialso in certain applications such as power suppliesand renewable energies, about company-specifictechnologies and product roadmaps, and last butnot least market trends. Thus the panelrepresented the leading companies in Silicon,Silicon Carbide, Gallium Nitride as well asPackaging Technologies. Panelist were (left to right in the photo) ABB

(Munaf Rahimo, Corporate Executive Engineer),Cree (John Palmour, CTO), EPC (Alex Lidow,CEO), GaN Systems (Geoff Haynes, VP BusinessDevelopment), Infineon (Gerald Deboy, SeniorPrincipal für Power Management & Supply),International Rectifier (Michael Briere, Consultant),Mitsubishi Electric (Gourab Majumdar,CTO/Fellow), Semikron (Thomas Grasshoff, HeadIntern. Product Management), Toshiba Europe(Georges Tchouangue, Chief Engineer Appl.Engineering), and Transphorm (Primit Parikh,President). The panel agreed that new powersemiconductors will open new businessopportunities besides the existing and also growingSilicon markets and that new packagingtechnologies are necessary to squeeze out the


On the Road to New FrontiersPCIM Europe 2014 ended on May 22 with a positive outcome. Approximately 8,000 visitors have come toNuremberg to inform themselves about new products and services in power electronics, power quality andintelligent motion during May 20-22. In total 391 exhibitors and 97 representing companies exhibited anextensive range of products and services to the trade visitors on an area of 20,000 square metres. At theconference, which took place in parallel to the exhibition, over 700 participants caught up with the latestperspectives and developments of Power Electronics, Intelligent Motion, Renewable Energy and EnergyManagement sectors.

The BPA was handed over on occasion of the PCIM opening ceremony by PEE Editor Achim Scharf (left) to MartelTsirinomeny Photo: Mesag

PCIM_2014_Layout 1 06/06/2014 12:05

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possibilities of the newly power semiconductors.Due to the interest of the audience the time wasexceeded by 30 minutes to a total of 2.5 hours.

New Frontiers with GaNOne of the well accepted PCIM Sessions were‘New Frontiers of Power Electronics with GaN’featuring five papers.

David Reusch from EPC (www.epc-co.com)opened this session with the paper ‘ImprovingPerformance of High Speed GaN TransistorsOperating in Parallel for High CurrentApplications’. The objective of paralleling devicesis to combine multiple higher on-resistancedevices to appear and operate as a single, loweron-resistance device allowing for higher powerhandling capability. To effectively parallel devices,each device should equally share current

effectiveness of paralleling. For high speed devicessuch as GaN FETs, the increased switching speedsamplify the impact of parasitic mismatches. Thusthis paper studied the impact of in-circuit parasiticimbalances on parallel performance for higherspeed GaN devices. A background of the impactsof the common source inductance, high frequencyloop inductance, and gate inductance on switchingperformance was also included (see also our coverstory).To improve the parallel performance of high

speed GaN devices also the parasitic imbalancecontributed by the PCB layout must be minimized.This work looked at different parallel layouts andassess their ability to provide parallel performancesimilar to an optimized single transistor design.Different parallel designs were created, eachcontaining four devices in parallel and operatingfrom 48 V to 12 V at a switching frequency of 300kHz. In total, eight 100 V EPC2001 eGaN FETswere used to achieve output power up to 480 W.

Larry Spaziani from Canadian GaN Systems(www.gansystems.com) spoke about ‘LateralGaN Transistors – A Replacement for IGBTs inAutomotive Applications’. The current drive-trainpower requirements of most hybrid vehicle (HV)and electric vehicles (EV) are met by using SiliconIGBT devices. Higher performance can beachieved with GaN power transistors because theycan provide lower on resistance, higher operatingtemperatures and smaller systems. Theimprovements offered by the GaN devices are yetto be realized in deployed subsystems. Severalgroups of researchers are experimenting andreporting upon GaN transistors that are aimed atreplacing Si IGBTs. The resultsachieved by GaN Systems were presented.

Shown were the package types used by IR/Delphiand GaN Systems. GaN Systems designs use asource sense electrode and no bond wires. This

ensures that the devices can be driven cleanly, on-and-off, and free of source power electrodegenerated noise. “Market researchers forecast aHEV power module market of $3.5 billion in 2020.Through multi-level converters requiring 1200 V inautomotive applications GaN devices might befeasible”, Spaziani pointed out.

David C. Sheridan from RFMD (www.rfmd.com)presented ‘Ultra-Low Loss 600V – 1200V GaNPower Transistors for High-Efficiency Applications’based on SiC substrates. While 650V is likely thefirst entry for GaN power devices, 1200V GaNswitches have not been widely reported. Using thesame base technology as the 650 V products,1200 V die were fabricated with breakdownvoltages exceeding 1500 V as suitable margin forover-voltage protection. Since superjunctiontechnology is not yet capable of 1200 V devices,the switching performance was compared tosimilarly rated 1200 V SiC MOSFETs which havealready shown performance advantages over SiIGBTs. Bi-directional power devices have been acontinuing topic of research and device design toenable specific topologies and applications such asmatrix converters for direct AC/AC conversion.A normally-on GaN device has no barrier to

current flow in both forward and reverse directionand can be configured efficiently into abidirectional switch with each blocking modesharing the same drift region.

Panasonic’s (www.jp.panasonic.com) TatsuoMorita presented a ‘99.3 % Efficiency of Boost-upConverter for Totem-pole Bridgeless PFC UsingGaN Gate Injection Transistors’. In this paper, ahighly efficient operation of a boost-up converterfor bridgeless PFC using normally-off GaN GateInjection Transistors (GITs) in a novel totem-poleoutput circuitry has been introduced. The normally-off device by a single chip with flip-chip assembly

PEE’s discussion panelists “SiC/GaN versus Silicon – Competition or Coexistence?” Photo: AS

Four parallel GaN transistor layout with four distributedhigh-frequency power loops Source: EPC

dynamically, and in steady state, and equally divideswitching related losses. The introduction ofunbalanced in-circuit parasitics between paralleldevices leads to uneven sharing and degradedelectrical and thermal performance, limiting the

PCIM_2014_Layout 1 06/06/2014 12:05

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effectively reduces the loop inductance in thecircuit. The fabricated boost-up converter exhibitspeak efficiency of 99.3% and efficiency of over99% is maintained in a wide range of outputpower from 450 W to 2 kW. The maximum outputpower of 2 kW is the highest ever reported for theefficient boost-up converter.

Eric Persson from International Rectifier(www.irf.com) spoke about GaN benefits in low-frequency motor drives. Appliance motor drivesare often operated at low PWM frequencies (6–20kHz), as there is little benefit to increase theswitching frequency above audible frequencies:switching losses will increase with nocorresponding reduction in the size of themagnetic (motor) as its size is based on thetorque/power requirements. So applying a GaNdevice capable of switching at much higherfrequencies in this application might not appear tomake sense at first, but this paper showed that, fora given size power stage, GaN clearly outperformsboth IGBTs and Si FETs in conduction loss,switching loss, and EMI, not only at full power butespecially at light load.This is particularly important for compressor

motor drives used in refrigeration and HVACapplications, which commonly operate at <25 %of full load. Also the low reverse recovery charge ofGaN cascode device, and the correspondingly lowhard-switched turn-on current spike significantly

reduces the conducted EMI. In conclusion - driveapplications, particularly at light load, can benefitfrom the 9x improved Qrr of the GaN cascodeover IGBT antiparallel diode, and 160x improvedover Silicon FREDFET – and its independence oftemperature. This results in a significantimprovement in efficiency, and an overallreduction in conducted EMI. The reduceddissipation allows higher power density andenables further integration of the inverter into amonolithic GaN device for extremely high powerdensity.

Drives for Power DevicesBernhard Strzalkowski from Analog Devices(www.analog.com) stressed isolation issues inhis paper ‘Maximum power limit for withstandinsulation capability of IGBT/MOSFET gate drivers’.The power density of modern power inverter risescontinuously. This is due to constantly increasingperformances of MOSFETs and IGBTs as well as ofthe gate drivers. One unpredictable system faultcan cause damage or explosion of power switches.On the other hand, new high performance gatedrivers exhibit excellent propagation delay, highbandwidth, over-current protection and high

Therefore, for high power density inverters, thegate driver isolation safety performance needs tobe investigated and validated. The isolationreliability must be analyzed in the worst case,when power-switches destruct. The paperinvestigated the gate driver’s isolation behavior byintentional destruction of IGBT/MOSFET powerswitches. High-voltage isolation test confirmedwithstand of electrical micro-isolation.

Infineon’s (www.infineon.com/eicedriver)Wolfgang Frank introduced a novel IGBT driverconcept called EiceDriver Safe with his paper‘Online adjustable gate current control IC solvesdv/dt problems in electric drives’. The tuning ofcommutation speed of currents betweenfreewheeling diodes and IGBT plays an important

Proposed Totem-pole PFC with Panasonic’s GaN GITsSource: Panasonic

RIGHT Losscomponents at200 W output

powerSource:

InternationalRectifier

Analog’s Gate Driver exhibit 500 ns dead timeand high magnetic isolation

integration level. Those drivers provide a smallform factor because the electrical isolation isalready integrated on the driver chip. This electricalisolation can be performed by means of integratedhigh voltage micro-transformers or capacitors.

Econo-Dual IGBT module with mounted EiceDriver SafeSource: Infineon

role in respect of the EMI behavior of powerelectronics. High dv/dt means a large stress for themotor winding insulation and motor bearings aswell as it causes conducted and radiatedinterferences with the supply in general. Manyworks for speed control of IGBT turn-on areknown. The paper presented the benefits of anovel gate drive IC which offers an onlineadjustment feature for dv/dt in respect of theswitching waveforms. A control means thatcountermeasures for reducing the dv/dt (e.g.filters) can be reduced or even skipped, which isan important step towards system cost reduction.

Packaging and Thermal AspectsSamuel Hartmann described in the paper‘Packaging Technology Platform for NextGeneration High Power IGBT Modules’ ABB’s(www.abb.com/semiconductors) approach fornew module layouts. To enable smaller and morecost efficient inverter designs, new power modulesare designed for low losses, reliable operation athigh temperature, high current and high switchingfrequencies. The IGBT module design presentedfeatures large Silicon active area for low on-statelosses, good internal temperature distribution, highcurrent conductor leads with well-designed electro-magnetic behavior and highly reliable joiningtechniques. While keeping the outline of the HiPakmodule unchanged the design of the conductorleads and the substrate are optimized. An increaseof the active IGBT area by 7 % and of the activediode area by 42 % is achieved. This allows higheroutput power especially in applications where thediode is normally limiting. The design can also be

PCIM_2014_Layout 1 06/06/2014 12:05

www.pcim-europe.com PCIM 2014 17


used with the reverse conducting Bi-Mode IGBT(BiGT). In this case all chips are dissipating equalthermal power which leads to uneven temperaturedistribution with the chip arrangement as in theexisting HiPak design. With the new design, thetemperature distribution is improved by havingonly 12 chips arranged in the mid of the module.

Fuji’s (www.fujielectric.co.jp) Motohito Horiannounced a novel ‘Compact, Low Loss and HighReliable Next Generation Si IGBT Module withAdvanced Structure’. To achieve the furtherminiaturization of power modules, low thermalimpedance of the whole module structure isneeded, i.e. through thick copper foil on the DCBsubstrate. This thick copper pattern contributes toreduce the thermal impedance. The advancedstructure was researched originally for the small

size of next generation devices such as SiC andallowed for about 30% shrinked chip sizecompared with conventional structure. Thanks tothis improvement, same current and voltage ratedSi IGBT power module features about 50 %footprint size of conventional power module athigher power and thermal cycling capability.

With the paper ‘Hybrid substrate - A future materialfor power semiconductor modules’ Curamik’s(www.curamik.com) Xinhe Tang introduced ahybrid substrate comprising of copper, ceramic andaluminum that combines the thermal and electricalperformance of the copper with the corrosionresistance of aluminum. The manufacture processhas been developed by bonding aluminum toDBC using an adhesive. The aluminum side can

be directly contacted to water to improve coolingefficiency without worry about corrosion. Theperformance and reliability testing are undertaken.

Robert Christopher Burns from AB-Mikroelektronik(www.ab-mikro.at) showed in the paper ‘VerticalIntegration Power Modules for Double SidedCooling Applications using Aluminum Conductorsand Thick Film Dielectrics’ possibilities for 3Dintegration. Challenges, advantages, andmanufacturability of a vertical chip stacked powermodule for double sided cooling applications byusing low cost materials and flexible processes.

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Open ABB prototype module for assessing electro-magnetic behavior Source: ABB Cross section and exterior view of Fuji’s advanced Si IGBT

power module Source: Fuji Electric

Exploded view of proposed vertical chip stackingarchitecture Source: AB Mikroelektronik

PCIM_2014_Layout 1 06/06/2014 12:05



N +44 (0)1732 370341 e: [email protected]

T

Vertical stacked power modules can be cooled onboth sides reducing the overall thermal resistancewhich directly impacts the power per area. Usingaluminum conductor plates in combination withthick film dielectrics allows for a compact, costeffective, and light weight power module whichmakes this technology a great choice forapplications where high performance at a low costis required.

Exhibition Product Innovations Avago (www.avagotech.com) displayed theimplementation of Amantys(www.amantys.com) Power Insight™ protocolwith Avago’s 50 MBd Versatile Link™ transmittersand receivers. The combined solution enables anIGBT gate driver with intelligent optical linkmanagement and on-board condition monitoringand diagnostics capabilities. It optimizes systempower efficiency, cost and availability for inverterstargeting renewable energy, industrial motor drive

are becoming increasingly important we willcontinue to enhance our link products withinnovative features to improve system efficiency.”

Cree (www.cree.com/power) announced a new40 mΩ, 1200 V SiC MOSFET and a 300 A, 1200 Vhalf-bridge power module aimed at expandingapplications in solar and industrial inverters as wellas EV chargers and three phase power supplies forinduction heating and other industrial automationsystems. In addition, Cree introduced a low current280 mΩ, 1200 V MOSFET to bring SiC advantages

with blocking voltages of 4.5 kV and 6.5 kV. Thiscompact driver enables IGBTs to be paralleledusing only one driver core. The 1SC0450V isbased on the SCALE-2 chip set and a partial-discharge-free, low-coupling-capacitance, high-voltage DC/DC transformer for test voltages up to10.4 kV RMS and a partial discharge extinctionvoltage of 7800 Vpeak. The driver core measures60 mm x 90 mm x 27.50 mm. “Our family ofhigh-voltage gate driver cores, which includes the2SC0535T 3.3 kV and 2SC0635T 4.5 kV dual gatedriver cores, reduces component count, therebymaking designs more compact and reliable”, saidSystem Engineering Director Michael Hornkamp.“These gate driver cores are suitable to drive all4.5 kV and 6.5 kV IGBT modules currentlyavailable on the market. Target markets includetraction and other high-voltage applications.”

GaN Systems (www.gansystems.com)announced five new normally-off 650 V GaNtransistors. The GS66502P, GS66504P,GS66506P and GS66508P are respectively 8.5A/165 m?, 17 A/82 m?, 25 A/55 m? and 34 A/41

Amantys’ IGBT driver Power Insight™ protocol runs overAvago’s 50 MBd Versatile Link™ transmitters andreceivers

and transportation applications. Amantys PowerInsight provides several important capabilitiesincluding monitoring of key system parameters atthe IGBT switch during system operation, reportingback detailed fault codes which help the systemoperator understand the nature of problems in theswitch, and configuring the switching characteristicsof the IGBT module remotely to match operationaldemands. “Our vision is to improve the availabilityand reliability of power systems through theintelligent control of power,” commented ErwinWolf, CEO at Amantys. “Avago Technologies hasbeen supplying Versatile Link products to thepower electronics industry for more than twodecades,” said Martin Weigert, VP of Avago’sIndustrial Fiber Product Division. “As real-timecondition monitoring, diagnostics and adjustment

Cree’s new 62-mm full-SiC half-bridge power modulewith driver board

to server, telecom, industrial and LED lightingpower supplies. The latest SiC power module(www.cree.com/power/CAS300M12BM2) isavailable with multiple gate driver options and ispin compatible to standard 62-mm half-bridgemodules, including IGBT modules rated at 450 Aor more. “This new power module is yet anotherexample of our commitment to thecommercialization of SiC-based power electronics,”said Cengiz Balkas, VP Power and RF. “Utilizing ourexperience in SiC power devices, we haveextended the benefits of SiC power modules tothe 100 kW to 1 MW power range for applicationssuch as induction heating, central solar invertersand active front-end motor drives. These newpower modules are introduced at a breakthroughprice-performance point below $500 that unlockscost savings in these applications”. At display werealso reference designs for a 50 kW solar inverterand a high-speed ZVS DC/DC converter.

IGBT gate driver manufacturer CT-Concept(www.IGBT-Driver.com) announced the1SC0450V single driver core for IGBT modules

CT Concept’s driver core for IGBT modules with blockingvoltages of 4.5 kV and 6.5 kV

GaNSystem’s CEO Girvan Patterson introduced 650 VGaN FETs Photo: AS

m? parts, while the GS43106L is a 30 A/60 m?cascode. The new 650 V enhancement modeparts feature zero reverse recovery charge and aredelivered in near chipscale PX package whicheliminates wire bonds. “With these new 650 Vparts as well as our recently-announced 100 Vfamily we offer a wide range of parts which areavailable for sampling now. Applications includehigh speed DC/DC converters, resonantconverters, AC motor drives, inverters, batterychargers and switched mode power supplies”,President Girvan Patterson stated.

Infineon’s (www.infineon.com/power) HighPower IGBT Modules (IHM) can be used evenlonger in the near future. More robust constructionand greatly improved thermal conductivitybehavior increase the average life time incomparison to previous models by a factor of upto 11 under the same conditions of use. Thesignificantly longer life time of the IHM-BEnhanced modules is based on two centralmodifications. First of all, a newly implementedmanufacturing technology enables more robustbond wire connections. This increases the

PCIM_2014_Layout 1 06/06/2014 12:05


resilience of the module components in powercycling associated with switching. The powercycling behavior of the IHM-B Enhanced hasimproved by a factor of two compared to theprevious model. Secondly, the thermal conductivityis increased by the combination of an AlSiC baseplate with AlN substrates. Depending on thetopology the thermal resistivity drops by 16 – 18%. “With the IHM-B Enhanced modules we areintroducing a new manufacturing technology and anew substrate material. These advances haveproven themselves in practical testing since theend of 2012 in challenging applications such aswind mills,” said product manager Björn-ChristophSchubart. Volume production is scheduled forAugust 2014.

International Rectifier (www.irf.com) introduced anew generation of SIP (System-In-Package) IPMswhich shrinks and simplifies the design ofappliance motor drive applications including airconditioners, fans, compressors and washingmachines. These IPMs feature trench IGBTs and athree-phase gate driver IC plus thermo-mechanicaltechnology to further improve thermalperformance and system efficiency by deliveringincreased power density and enhanced reliability.The new devices are pin-to-pin compatible withthe existing IRAM SiP1A series. “Improving theprevious IRAM generation was not an easy task.However, the new IRAM platform utilizes state-of-

the-art technology for intelligent power modules toaddress the growing demand for more efficientmotor drives”, IR’s director of IGBT ApplicationEngineering, Andrea Gorgerino, pointed out. Thecompany also launched compact IPMs for lowpower motor drive applications including fans,pumps, air purifiers and refrigerator compressordrives in a compact 12 mm x 29 mm SOP/DIPpackage. These so-called µIPM family offers a costeffective power solution by leveraging industry

standard footprints and processes compatible withvarious PCB substrates. The family of 32 newdevices features high-voltage FredFET MOSFETsspecifically optimized for variable frequency driveswith voltage ratings of 250 V or 500 V paired withdriver IC tuned to achieve balance between EMIand switching losses. The µIPMs offer DC currentratings up to 4.6 A to drive motors up to 150 Wwithout a heatsink and are available in boththrough-hole and surface mount package options.

LEM (www.lem.com) announced the addition ofthree new HO series of current transducers whichextend nominal current measurement up to 250 Aand offer a range of mounting options such asPCB or panel or busbar, and integrating theconductor or with an aperture (15 mm x 8 mm).

We look forward to seeing you 12-14 April 2016 NEC Birmingham

ContactDoug Devlin on t: +44 (0)1922 644766 e: [email protected] Nigel Borrell on: t: +44 (0)1732 370341 e: [email protected]

The UK’s leading exhibition for Drives, Automation, Power Transmission and Motion Control Equipment

visit www.drives-expo.com

IR’s Andrea Gorgerino introduced novel IGBT modules Photo: ASG

LEM’s HO series current transducers

PCIM_2014_Layout 1 06/06/2014 12:06



The mounting options provide of up to threeinterchangeable mounts: one vertically, onehorizontally and one on the busbar when used.HO series current transducers measure DC, AC,and pulsed signals using Open-loop Hall-effectASIC. The new series offer offset and gain driftswhich are up to twice as accurate across thetemperature range as the previous generation andhave a faster response time of 2.5 to 3.5 µs.Operating from a single supply voltage of 3.3V or5 V, the HO series can measure up to x 2.5 theprimary nominal current and integrate anadditional pin which provides over-currentdetection set at x 2.93 the nominal current. Theyalso provide fault reporting in the event of memorycorruption.

Microsemi (www.microsemi.com/sicmosfets)introduced its new SiC MOSFET product familywith new 1200 V devices, designed for high-powerindustrial applications where efficiency is critical.These applications include solutions for solarinverters, electric vehicles, welding and medicaldevices. “Microsemi is well positioned to capitalizeon SiC semiconductor market growth. MarketResearch estimates the SiC semiconductor marketwill grow 38 percent year-over-year to $5.3 billionby 2022”, underlined James Kerr, director ofmarketing, power discrete products. “Microsemicontinues to expand its SiC product portfolio bycapitalizing on our in-house SiC fabricationcapabilities”, added Pascal Ducluzeau, productmarketing director, power module products. The1200 V/40 A and 50 A SiC MOSFETs are rated at80 mΩ and 50 mΩ on-resistance in both industrystandard TO-247 and SOT-227 packages. SiCMOSFETs are also integrated into the company’spower modules, which are used in batterycharging, aerospace, solar, welding and other high-power industrial applications. The new powermodules provide higher frequency operation andimprove system efficiency(www.microsemi.com/sicpowermodules).The SiC MOSFETs are also complimented by acomplete product line of SiC Schottky Diodes. Thenew 1700V SiC Schottky Diode expands the linebeyond the 1200V and 650V. These products aredesigned with superior passivation technology forruggedness in outdoor and humid applications(www.microsemi.com/sicdiodes).

Mitsubishi Electric Corp.(www.mitsubishichips.eu) introduced newhybrid SiC power modules featuring SiC SchottkyBarrier Diodes (SBD) and Silicon IGBTs suitable forswitching frequencies of more than 20 kHz. Thenew hybrid SiC power modules are packaged as2in1 configurations with 1200 V and 100 A(CMH100DY-24NFH), 150 A (CMH150DY-24NFH), 200 A (CMH200DU-24NFH), 300 A(CMH300DU-24NFH), 400 A (CMH400DU-24NFH) or 600 A (CMH600DU-24NFH). Allmodule packages are compatible with existingSilicon-based modules. The 100 A and 150 Amodules offer a 30 % reduced internalinductance. Also a 6.5kV IGBT module of the next

generation chip set of 7th gen IGBTs and diodeshave been announced which are capable ofturning off 4500 A. Therefore it is confirmed thatthe current rating of the new 6.5 kV IGBT moduleis able to be increased up to 1000 A from 750 Aof conventional modules. Besides these offeringthe company already introduced full-SiC 3.3 kVpower modules for traction applications.

ROHM (www.rohm.com/eu) demonstrated itsnew 3rd gen 1200/650 V SiC MOSFETs based onTrench Gate structure technology, marking anotherdevelopment of SiC MOSFET which the companystarted back in 2010. Compared to conventionalplanar MOSFETs which have JFET regionsincreasing the on-resistance, the new MOSFETtypes only reach about half of the same on-resistance over the whole temperature range whilethe stability of the Gate oxide film and of the BodyDiode remains as high as with 2nd gen SiCMOSFETs. Since the issues regarding oxide

during normal operating condition, motor start-upcurrent, or feeding transformer size. For the firsttime MiniSKiiP Spring Technology is available forpower ratings higher than 40 kW. The benefits arelower material costs as compared to traditionalinverter designs because the expensive bus-baringof the load connectors can be replaced by a cost-efficient PCB connection. In combination with afast, solder-free assembly, this allows for reducingthe system costs by up to 15 percent. The springcontacts make the layout of the printed circuitboard (PCB) simpler and more flexible becausethe PCB does not need holes for soldering pins.The MiniSKiiP Dual’s output of up to 90 kWrequires higher current-carrying capability of thePCB, which e. g. can be achieved by using a 105µm standard metal coating on the PCB. This allowsfor load currents up to 180 A RMS, which used tobe reserved for modules with screw mountedbusbars so far. The family concept of SEMiX® isexpanded by the introduction of the 1200V SEMiX3p press-fit half bridge IGBT modules for nominalcurrents of 300 A, 450 A and 600 A in the samehousing size. The SEMiX 3p press-fit comes withan optimized internal design, now making 600 Anominal current possible in housing size 3, leadingto lower cost per output power. Finally, Press-Fitexpands the SEMITOP® product family as analternative concept to solder mounting. Press-Fitmounting ensures easy and fast mounting of themodule and PCB in one step, reducing theassembly time and cost by eliminating the solderprocess. Regarding SiC in power modules CSOPeter Sontheimer envisions certain applicationssuch as windmills along with sintered die attachand SkiN connectivity.

Chinese Starpower(www.starpowereurope.com) took theopportunity at PCIM to enter the European marketby opening a logistics center in Cadenazzo(Switzerland). StarPower was founded in 2005 in

ROHM introduced 1200/650 V SiC Trench MOSFETs of its3rd generation

breakdown during high drain-source voltage havebeen overcome, the result is higher reliability andincreased current-carrying capability at reduced celldensity, and reduced conductivity loss andswitching loss. The company already developedSiC planar MOSFETs which have suppressed thedegradation of parasitic PN junction diodes whenforward current penetrates. Now, the low on-resistance of the trench SiC MOSFETs improvesinverter power density and switching. The parasiticbody diode shows minimal reverse recoverybehavior and degradation caused by its conductionis widely eliminated. Available in TO-247 3Lpackage or bare dies and 1200/650 voltageratings, on-resistance varies between 22 and 40mΩ.

In addition to the 600/650 V and 1200 VSemikron (www.semikron.com) MiniSKiiP powermodules, 1700 V modules with 6-pack andConverter-Inverter-Brake (CIB) circuit topology arenow available. The migration from 400/480 V ACto 600/690 V AC voltage levels used in industrialapplications becomes increasingly popular in theprocess industry due to cost savings based onreduction of motor size, cable cross section, max.load current, total power losses, cable voltage drop

StarPower is in a position to offer competitive productson high-quality level,“ states Managing Director PeterFrey Photo: AS

PCIM_2014_Layout 1 06/06/2014 12:06



Jiaxing near Shanghai and presently has 350employees. The company produces powermodules with state-of-the-art production facilities,such as a fully automated production and testingline in compliance with ISO 9001 standard. Theproduct spectrum comprises standard IGBT half-bridge modules in the power range of 600 V,1200 V and 1700 V up to 500 A as well as 6-pack and 7-pack modules and IPMs. “Owing tothe experience and expertise in R & D andindustrial production of power electronicsmodules, StarPower is in a position to offercompetitive products on high-quality level,“ statesPeter Frey, Managing Director and foundingmember of the European subsidiary. Frey bringswith him 22 years of sales experience in powerelectronic modules and systems. “Our salesexceeded $60 million mainly in China withproduction figures of 150,000 modules permonth. Besides the standard modules we havehigher power traction modules and also SiCMOSFET activities”, added CEO Hua Shen. Chipsare supplied from ABB, Infineon and IR, substratesfrom Curamik, soldering is used for die-attach andwire-bonding for connectivity - thus standardtechnology. Modules are Econopack/flow pin-compatible.

Toshiba’s (www.toshiba-components.com)latest 650 V power MOSFETs are based on thecompany’s fourth generation superjunctionDTMOS IV deep trench process and are availablein seven different compact packages. Devices canbe supplied with an integrated fast recovery diode(FRD). Thanks to the DTMOS IV technology, thenew MOSFETs combine ultra-low on resistancewith reduced die size, leading to very small formfactors without power loss penalties. A strongadvantage of the DTMOS IV deep trench processcompared to a standard superjunction process, isthe lower thermal coefficient of on-resistance overtemperature. DTMOS IV also minimizes MOSFEToutput capacitance, and an optimized gate-draincapacitance delivers improved dv/dt switchingcontrol. The company also announced a family oflow-voltage Trench-MOSFETs based on the U-MOSIX-H process. The new MOSFETs deliver leadingFOM and will be initially available in 40 V versions,having a typical on-resistance of 0.7 mΩ and atypical output capacitance of 1930 pF. TheTPHR8504PL is supplied in an ultra-miniatureSOP-Advance package measuring 5 mm x 6 mm.Target applications include DC/DC converters,synchronous rectification and other powermanagement circuitry where low-power operation,high-speed switching and minimum PCB realestate are needed.

Vicor (www.vicorpower.com) announced a newplatform of isolated, regulated DC/DC convertermodules based on the company’s Converterhoused in Package (ChiP) platform. This ChiPDCM platform spans DC/DC conversionrequirements from 12 V to 420 V input and 12 Vto 55 V output. Coupled with FPA and ZVSregulators, these power components enable

dense, efficient and scalable source-to-load powersystem solutions. At PCIM two pre-configured ChiPDCMs have been shown. The first is a 4623 (46mm x 23 mm) 600 W ChiP DCM, with nominal290 V input and 13.8 V output for applicationssuch as high-voltage Li-Ion battery to 12 Vsystems. “This is a new generation of bricksoptimized for automotive applications”, said RobRussell, VP of Product Marketing. The second is a3623 (36 mm x 23 mm) 320 W ChiP DCM with16-50 V input range and nominal 28 V output,optimized for 28 V MIL-COTS systems. ChiP DCMsprovide up to 76 W/cm? power density and 93 %efficiency, with parallel array capability of up toeight units. Both ChiP DCMs are available for ordertoday from Vicor and its authorized distributorssuch as Hy-Line (www.hy-line.de).

Vincotech (www.vincotech.com) has rolled out anew set of power modules for UPS and solarapplications. These flowMNPC 4w 2g come inflowSCREW 4w housings and feature MNPCtopology. The 400 A and 600 A devices have beenequipped with a different class of 1200 V and 650V IGBTs and diodes to improve efficiency andoptimize inverters and are also available with athermal interface made of phase-change material.

Mitsubishi’s latest 6.1 generation IGBTs and diodesin the half-bridge path, paired with 650 Vsemiconductors in the neutral clamp path, improvethe performance in the target applications.Featuring a power PCB design, the modules’commutation inductance is very low so no snubbercapacitors are needed. Additionally new SiC-basedmodules featuring SiC MOSFETs have beenintroduced in two versions. One is a flow3xPHASE0 SiC three-phase inverter module with 3xBUCK/BOOST and split output topology; the otheris a flow3xBOOST 0 SiC with three-channel boostcircuits. “At switching frequencies of 50 kHz andabove the use of the SiC MOSFET’s internal bodydiode makes sense”, said Werner Obermaier.Director Product Marketing. “We use Cree’s andRohm’s second generation SiC MOSFETs in ourmodules”. They achieve >99 % peak efficiency at64 kHz and are equipped with integrated DC-link600 V ceramic capacitors. The company nowmakes use of sintering for the die attach in certainmodules. “Though the market faces ups anddowns, we steadily gained market share over theyears. The downturn in photovoltaics wascompensated by industrial applications and we arelooking for better results in the foreseeable future”,CEO Joachim Fietz pointed out. AS

Vicor’s RobRussell presenteda new generation

of bricksoptimized forautomotiveapplicationsPhoto: AS

Vincotech’s CEOJoachim Fietzexpects growingmarket share inpower modules

Photo: AS

PCIM_2014_Layout 1 06/06/2014 12:06

22 INDUSTRY NEWS


1500 A Industrial Power Tester die-attach can be sintered silver which has extra low thermal resistance. In anutshell, the thermal path has been improved.However, thermal and thermal-mechanical stress can still cause failures

related to power cycling and heat. These stresses can lead to problems suchas bond wire degradation, solder fatigue, delamination of stack-ups, and die orsubstrate cracks.

Test procedureThe MicReD Power Tester 1500A can power modules test through tens ofthousands - potentially millions - of cycles while providing “real-time” failure-in-progress data for diagnostics. This significantly reduces test and lab diagnosistime and eliminates the need for post-mortem or destructive failure analysis.Common thermally-induced mechanical failures that the tester analyzes in“real time” include die-attach wire bond separations, die and package stack-updelamination and cracks, and solder fatigue.While running power cycles, the real-time structure function analysis

shows the failure in progress, the number of cycles, and the cause of the

Mentor’s new electrical/thermal power tester for discretes and modules

Mentor Graphics introduced at PCIM the Power Tester 1500A for powercycling and thermal testing of electronics components to simulate andmeasure lifetime performance. The MicReD tests the reliability of discretepower electronic components and modules by combining both power cyclingand thermal transient measurements with structure function analysis whileproviding data for real-time failure-cause diagnostics.Reliability is a prime concern in many industries that use high-power

electronics, so accelerated testing of these modules through a lifetime ofcycles is a must for the component supplier, the system supplier, and for theOEM in demanding applications such as off-shore windmills where trouble-

shooting is very costly. For example, railway-traction applications are expectedto have a reliable 30-year lifetime, and 50,000 to millions of cycles arerequired by power modules incorporated into hybrid and electrical vehicles aswell as solar and wind turbine energy production systems.With this increasing pressure, innovation has resulted in new technologies

such as ceramic substrates that have an improved heat transfer coefficient,ribbon bonding to replace thick bond wires, and solderless die-attach toenhance the cycling capability of the modules. The new substrates help todecrease temperatures, the ribbons can take more current, and the solderless

Change in junction temp for various IGBTs over cycles

Test procedure for power modules

failure, eliminating the need for a lab post-mortem. Conducting lengthycycling measurements on multiple samples to estimate the cycle countrange corresponding to degradation is no longer necessary. Also there’s noneed for an excess number of thermal measurements in this range toensure degradation is captured. The device under test only has to bemounted and connected once; cycling and configuration are defined at thestart. The testing and characterization data produced can be used tocalibrate and validate detailed models in FloTHERM and FloEFD thermalsimulation software.The MicReD Power Tester 1500Ais based on the T3Ster® advanced

thermal tester for accurate thermal characterization of semiconductor devicepackages and LEDs. The MicReD industrial products incorporate the laboratory-level accuracy of the T3Ster product in robust machines for operators to useinside manufacturing facilities. The Power Tester 1500A provides a touch-screen interface and can record a broad range of information during test, suchas current, voltage and die temperature sensing; and detailed structurefunction analysis to record changes in the package’s thermal structure. Thismakes it a platform for package development and quality checking ofincoming parts before production, even under unattended operation overweeks. The Power Tester follows the JEDEC Standard JESD 51-1 static test

method. Based on the captured transient response, the system canautomatically generate structure functions. Structure functions provide anequivalent model of the heat conduction path expressed by thermalresistances and thermal capacitances, and they can be used to detectstructural failures or to capture partial thermal resistances in the heat

Industry News_Layout 1 06/06/2014 11:08

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23_PEE_0414_Layout 06/06/2014 09:46 Page 1

24 INDUSTRY NEWS


conduction path. The Power Tester also supports the JEDEC Standard JESD51-14 transient dual interface measurements to determine the thermalresistance from junctiuon to case. The process of combined power cycling andRth measurement mode creates stress on the device using power cycles, doesregular measurement of Rth during the cycling, monitors system parameterssuch as voltage and current, and automatically increases Rth measurementfrequency.

Test exampleMentor conducted tests with four medium-power IGBT modules containingtwo half bridges to demonstrate the rich data that can be obtained fromautomated power cycling of the components. The details of these experimentswere presented at the 2013 IEEE Electronics Packaging TechnologyConference and the 2014 SEMI-THERM Conference.The modules were fixed to the liquid-cooled cold plate with a high-

conductivity thermal pad to minimize the interfacial thermal resistance. Thecold-plate temperature was maintained at 25°C throughout the wholeexperiment using a refrigerated circulator. The gates of the devices wereconnected to their drains (the so-called magnified diode setup), with eachhalf-bridge powered by a separate driver circuit. Two current sources wereconnected to each half bridge. A high-current source that can be switched onand off very fast was used to apply stepwise power changes to the devices. Alow current source provided continuous biasing of the IGBT, which alloweddevice temperature to be measured when the heating current was turned off.An initial set of tests on four samples was conducted using constant heating

and cooling times.Heating and cooling times were selected to give an initial temperature

swing of 100°C, at ~200 W with 3 seconds heating and 10 seconds cooling.

This most closely mimics the application environment, where degradation ofthe thermal structure results in higher junction temperature leading toaccelerated aging. Of the four devices, sample 3 failed significantly earlier thanthe others shortly after 10,000 cycles. Samples 0, 1, and 2 lasted longer,failing after 40,660, 41,476 and 43,489 power cycles, respectively. The flatregion in the structure functions figure at 0.08 Ws/K corresponds to the die-attach. The structure is stable until 15,000 cycles, but after that point, thedegradation of the die-attach is obvious as its resistance increasescontinuously until the device fails. Again, the immediate cause of the devicefailure is unknown, but a short circuit formed between the gate and theemitter has been observed, and burned spots could be seen on the chipsurface.“The ability to pinpoint and quantify degradation in the thermal stack for all

semiconductor devices during development will greatly assist in thedevelopment of cost-optimized packaging solutions currently hampered bypackage-reliability concerns,” said Mark Johnson, professor of advanced powerconversion, faculty of engineering, University of Nottingham. “Mentor’s PowerTester 1500A should be an invaluable tool for investigating thermal pathdegradation in all types of power modules.”

www.mentor.com/powertester-1500a

Modern automotive and commercialvehicle power management ICscontinue to require higherperformance. As the powerrequirements for these applicationscontinues to grow, the availablespace for power conversion solutionscontinually shrinks requiring evenhigher power densities. Furthermore,the required electrical performancecriteria of these switching regulatorsbecome more demanding. Only 2.5µA of quiescent current reducing thebattery drain associated with always-

on systems. Automotive (12VNOM) or

commercial vehicle (24 VNOM)applications running from the batterybus require a well regulated outputvoltage such as 3.3V, even as theinput voltage can swing from 3.5 Vin a cold crank or stop/start scenarioup to 65 V in a load dump scenario.Similarly, high efficiency is ofparamount importance as itminimizes thermal designconsiderations while also maximizingbattery run time in hybrids and

electric vehicles. For applicationssuch as security, navigation, safetyand environmental control which areoften required to be always on,minimal quiescent current is criticalso as not to drain the battery whenthe car is parked for long periods oftime. Greater than 2 MHz frequencyoperation avoids noise in criticalfrequency bands such as AM radioand minimizes the size and cost ofexternal components. Finally veryrobust short-circuit and over-voltageprotection ensures overall system

reliability. The LT8620 is the first

synchronous high voltage step-downregulator that has an input voltagerange of 3.4 V to 65 V which candeliver up to 2 A to voltages as lowas 0.97 V. Its internal synchronousrectification delivers efficiencies ashigh as 94 % which eliminates anyrequirements for heat sinks while itsBurst Mode® operation requiresonly 2.5 µA of quiescent currentreducing the battery drain associatedwith always on systems. The LT8620

Synchronous Regulator forAlways-On Applications

LEFT:Specifications ofPower Tester1500A

Structure functions (structure time points) generated from the thermal transientsmeasured on sample 0 after every 5,000th cycle in the application example


INDUSTRY NEWS 25


Contact: Shawn Coleson +44 (0)1732 [email protected]

Direct

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TARGET YOUR BUYERSFROM OVER 60,000 QUALIFIED CONTACTS

offers an minimum on-time of 30ns, enabling it to step-down from 32V to 2 V with a switching frequencyof 2 MHz. Additionally, it operateswith only 250 mV (at 1 A) ofdropout under all conditions suitedfor applications which mustwithstand cold crank or soft-startscenarios.

Operation PrincipleTop and bottom power switches areincluded with all necessary circuitryto minimize the need for externalcomponents. Low ripple Burst Modeoperation enables high efficiencydown to very low output currentswhile keeping the output ripplebelow 10 mVP-P. A SYNC pin allowssynchronization to an external clock.Internal compensation with peakcurrent mode topology allows theuse of small inductors and results infast transient response and goodloop stability.The EN/UV pin has an accurate 1

V threshold and can be used toprogram VIN under-voltage lockout orto shut down reducing the inputsupply current to 1 A. A capacitoron the TR/SS pin programs theoutput voltage ramp rate during start-up. The PG flag signals when VOUT iswithin ±9 % of the programmedoutput voltage as well as faultconditions. The LT8620 is availablein small 3 mm ? 5 mm QFN packagewith exposed pads for low thermalresistance. An oscillator, with frequency set

using a resistor on the RT pin, turnson the internal top power switch atthe beginning of each clock cycle.Current in the inductor thenincreases until the top switch currentcomparator trips and turns off thetop power switch. The peak inductor

current at which the top switch turnsoff is controlled by the voltage onthe internal VC node. The erroramplifier servos the VC node bycomparing the voltage on the VFBpin with an internal 0.97 V reference.When the load current increases itcauses a reduction in the feedbackvoltage relative to the referenceleading the error amplifier to raisethe VC voltage until the averageinductor current matches the new

load current. When the top powerswitch turns off, the synchronouspower switch turns on until the nextclock cycle begins or inductor currentfalls to zero. If over-load conditionsresult in more than 3.8 A flowingthrough the bottom switch, the nextclock cycle will be delayed untilswitch current returns to a safe level.If the EN/UV pin is low, the LT8620is shut down and draws 1 ?A fromthe input. When the EN/UV pin is

above 1 V, the switching regulatorwill become active.To improve efficiency across all

loads, supply current to internalcircuitry can be sourced from theBIAS pin when biased at 3.3 V orabove. Else, the internal circuitry willdraw current from VIN. The BIAS pinshould be connected to VOUT if theLT8620 output is programmed at 3.3V or above.Comparators monitoring the FB


26 INDUSTRY NEWS


pin voltage will pull the PG pin low ifthe output voltage varies more than±9 % (typical) from the set point, orif a fault condition is present. Theoscillator reduces the operatingfrequency when the voltage at theFB pin is low. This frequencyfoldback helps to control theinductor current when the outputvoltage is lower than theprogrammed value whichoccurs during start-up or over-

current conditions. When a clock isapplied to the SYNC pin or the SYNCpin is held DC high, the frequencyfoldback is disabled and theswitching frequency will slow downonly during over-current conditions.

Application ExampleAn application requiring 1A outputshould use an inductor with an RMSrating of greater than 1 A and an ISATof greater than 1.3 A. During longduration over-load or short-circuitconditions, the inductor RMS routingrequirement is greater to avoidoverheating of the inductor. To keepthe efficiency high, the seriesresistance (DCR) should be less than0.04 Ω, and the core material shouldbe intended for high frequencyapplications. The LT8620 limits the peak switch

current in order to protect the

switches and the system from over-load faults. The top switch currentlimit (ILIM) is at least 3.8 A at low dutycycles and decreases linearly to 2.8A at DC = 0.8 V. The inductor valuemust then be sufficient to supply thedesired maximum output current(IOUT(MAX)), which is a function of theswitch current limit (ILIM) and theripple current. In order to achieve higher light

load efficiency, more energy must bedelivered to the output during thesingle small pulses in Burst Modeoperation such that the LT8620 canstay in sleep mode longer betweeneach pulse. This can be achieved byusing a larger value inductor (i.e. 4.7H), and should be consideredindependent of switching frequencywhen choosing an inductor. Forexample, while a lower inductorvalue would typically be used for ahigh switching frequency application,if high light load efficiency is desired,a higher inductor value should bechosen.Bypass the input circuit with a

ceramic capacitor of X7R or X5R typeplaced as close as possible to the VINand PGND pins. Y5V types havepoor performance over temperatureand applied voltage, and should notbe used. A 4.7 F to 10 F ceramiccapacitor is adequate to bypass the

LT8620 and will easily handle theripple current. Larger inputcapacitance is required when a lowerswitching frequency is used. If theinput power source has highimpedance, or there is significantinductance due to long wires orcables, additional bulk capacitancemay be necessary. This can beprovided with a low performanceelectrolytic capacitor.Step-down regulators draw current

from the input supply in pulses withvery fast rise and fall times. The inputcapacitor is required to reduce theresulting voltage ripple at the LT8620and to force this very high frequencyswitching current into a tight localloop, minimizing EMI.A 4.7 F capacitor is capable of

this task, but only if it is placed closeto the LT8620. A second precautionregarding the ceramic input capacitorconcerns the maximum input voltagerating. A ceramic input capacitorcombined with trace or cableinductance forms a high quality(under damped) tank circuit. If theLT8620 circuit is plugged into a livesupply, the input voltage can ring totwice its nominal value, possiblyexceeding the regulator’s voltagerating. The output capacitor has two

essential functions. Along with theinductor, it filters the square wavegenerated by the regulator toproduce the DC output. In this role itdetermines the output ripple, thuslow impedance at the switchingfrequency is important. The second

65 V/2 A Buck regulator LT8620

Efficiency at 5 V output and various input voltages

function is to store energy in order tosatisfy transient loads and stabilizethe control loop. Ceramic capacitors(X5R or X7R types) have very lowequivalent series resistance (ESR)and provide the best rippleperformance. Transient performance can be

improved with a higher value outputcapacitor and the addition of a feed-forward capacitor placed betweenVOUT and FB. Increasing the outputcapacitance will alsodecrease the output voltage ripple.

A lower value of output capacitor canbe used to save space and cost buttransient performance will suffer andmay cause loop instability. Ceramic capacitors are small,

robust and have very low ESR.However, ceramic capacitors cancause problems due to theirpiezoelectric nature. When in BurstMode operation, the LT8620’sswitching frequency depends on theload current, and at very light loadsthe device can excite the ceramiccapacitor at audio frequencies,generating audible noise. Since theregulator operates at a lower currentlimit during Burst Mode operation,the noise is typically very quiet to acasual ear.If this is unacceptable, a high

performance tantalum or electrolyticcapacitor should be used at theoutput. Low noise ceramic capacitorsare also available.The LT8620 allows the user to

program its output voltage ramp rateby means of the TR/SS pin. An


27


Typical truck application at 5 V/2 A outputLT8620 block diagram

INDUSTRY NEWS

internal 1.9 A pulls up the TR/SSpin to INTVCC. Putting an externalcapacitor on TR/SS enables softstarting the output to preventcurrent surge on the input supply.During the soft-start ramp theoutput voltage will proportionallytrack the TR/SS pin voltage. Foroutput tracking applications, TR/SScan be externally driven by anothervoltage source. From 0 V to 0.97 V,the TR/SS voltage will override theinternal 0.97 V reference input to

the error amplifier, thus regulatingthe FB pin voltage to that of TR/SSpin. When TR/SS is above 0.97V,tracking is disabled and thefeedback voltage will regulate to theinternal reference voltage. TheTR/SS pin may be left floating if thefunction is not needed.

PCB LayoutFor proper operation and minimumEMI, care must be taken duringprinted circuit board layout. Large,

switched currents flow in the VINpins, GND pins, and the inputcapacitor. The loop formed by theinput capacitor should be as small aspossible by placing the capacitoradjacent to the VIN and GND pins.When using a physically large inputcapacitor the resulting loop maybecome too large in which caseusing a small case/value capacitorplaced close to the VIN and GNDpins plus a larger capacitor furtheraway is preferred. These

components, along with the inductorand output capacitor, should beplaced on the same side of thecircuit board, and their connectionsshould be made on that layer. Theexposed pad on the bottom of thepackage must be soldered to groundso that the pad is connected toground electrically and also acts as aheat sink thermally.

www.linear.com/product/LT8620

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28 POWER GaN www.epc-co.com


GaN – Moving Quickly intoEntirely New MarketsGallium Nitride (GaN) based power devices are rapidly being adopted due to their ability to operate atfrequencies and switching speeds beyond the capability of Silicon power devices. With discrete GaNdevices capable of switching at slew rates up to 70 V/ns, the system performance is greatly impacted byaspects outside the active power devices, such as high speed gate drivers and printed circuit board layout.In this article, the latest family of high frequency enhancement mode Gallium Nitride power transistors(eGaN FETs) is presented for use in multi megahertz buck converters. These devices were designed toaddress high-frequency hard-switching power applications at higher voltages. Alex Lidow, JohanStrydom and David Reusch, Efficient Power Conversion (EPC), El Segundo, USA

The introduction of a new family of highperformance enhancement mode eGaNFETs offers the potential to switch at higherfrequencies and efficiency than possiblewith traditional Si MOSFET technology.Combined with an improved switchingfigure of merit and low parasitic packaging,the new devices also have optimizeddevice pin-out to minimize parasitic PCBlayout inductance to fully utilize thedevice’s capability. Example buckconverters operating at 10 MHz showexperimental peak efficiencies of over 89%. Although the results are impressive,there is still a significant loss componentdue to the current silicon gate driver. Tofully utilize the capability of the new highfrequency, reduced size eGaN FETs, afocused improvement in the gate driverstructure is required, which in turn willallow a further increase in efficiency andswitching frequency capability.

Hard Switching FOMThe impact of the miller charge (QGD),

which controls the voltage falling (tf) andrising speed on the switching time isapparent and, for hard-switchingapplications, the use of QGD x RDS(ON) as aswitching figure of merit (FOM) iscommon. For cases at lower voltages andhigher currents, the current-dependentterm (QGS2) cannot be neglected. QGS2 isthe portion of the gate source chargebetween the device threshold voltage (VTH)to the gate plateau voltage (VPL), whichcontrols the current rising (tr) and fallingspeed. These different gate chargeportions are shown on the right side ofFigure 1.The idealized turn-on period, shown on

the left side in Figure 1, begins with anincrease of gate drive voltage; when thegate voltage reaches the threshold voltage,the current through the device will begin torise, being driven by the gate current (IG).During the drain current rising period, thetransistor encounters both current andvoltage in the device, resulting in switchingloss. For the current rising period, the

device parameter determining loss is QGS2.When the transistor current reaches theload current, the voltage across the devicewill begin to fall and more switching loss inthe device will be incurred. For the voltagefalling period, the device parameterdetermining loss is QGD. For the turn offswitching losses, the same principles applyand minimizing the QGD and QGS2

parameters will decrease switching lossesincurred in a hard switching application.The overall switching loss is given by:

Over the years, a number of differentfigures of merit (FOMs) have beenproposed to simply reflect the in circuitperformance capability of a given devicetechnology in different applications. Theabove idealized hard-switching powerequations forms the basis of the hard-switching FOM (FOMHS) or QSW x RDS(ON)

= (QGD + QGS2) x RDS(ON) where QSW is thetotal switching gate charge during the

Figure 1: Idealized switching waveform used for calculating switching loss (left) and related FET charge diagram (right)

Cover Story_0414_Layout 1 06/06/2014 10:58

www.epc-co.com POWER GaN 29


hard switching interval. These idealized switching waveforms

rarely translate directly into actual in circuitperformance results, as device and layoutparasitics can significantly increase or evendominate switching losses. For a buckconverter there are two major parasiticinductances that have a significant impacton converter performance: The commonsource inductance (LS) is the sourceinductance shared by the drain-to-sourcepower current path and gate driver loop;and the high frequency power loop (LLOOP)is the power commutation loop andcomprised of the parasitic inductance fromthe positive terminal of the inputcapacitance, through the top device,synchronous rectifier, ground loop, andback through the input capacitor. Thecommon source inductance has beenshown to be critical to performancebecause it directly impacts the switchingspeed of the devices. The high frequency loop inductance,

while not as penalizing to switching speedsas common source inductance, stillnegatively impacts switching performance.Another major drawback of high frequencyloop inductance is the drain to source

voltage spike induced during the switchingtransition, shown on the right in Figure 1.This voltage spike reduces maximumusable device voltage and increasesswitching loss. To enable the highswitching speed available from the lowFOM of GaN devices, low parasiticpackaging and PCB layout, and separationof the gate and power loops to minimizecommon source inductance are required.On the packaging level, this requires a

low inductance package, such as a ball gridarray (BGA) or other similar wafer levelchip scale package (WLCSP). Furthermore,the common source inductance, beingmost critical parasitic, can be all buteliminated through the addition of aseparate source terminal solely dedicatedas a gate signal return path (gate return).To reduce power loop and gate loopreduction on a packaging level, theresultant board layout should beoptimized. This is best achieved throughgenerating large parallel conductors, wherethe loop current is flowing in oppositedirections as shown in the left of Figure 2. The current opposition results in

magnetic flux cancellation outside theinductive loop, while minimizing the loop

length and vertical interconnect height canreduce the magnetic energy storage insidethe loop. Lastly, the conductor widthshould be maximized to minimize theinductance per unit length. To support thisoptimized layout structure on a packaginglevel, the device terminals should bedesigned to be wide and laid-outperpendicular to the power loop currentflow direction. The resultant EPC8000series eGaN FET package is shown on theright of Figure 2. To push the switching frequency higher

requires lower charge devices, which inturn result in higher on-resistance, suitablefor lower power per phase operation. Anexample of such a reduced chargeEPC8004 device is shown on the left inFigure 3 and is compared to the smallestexisting same voltage (40 V) rated device,the EPC2014 and shows about a seventimes reduction in gate charge. Another important aspect to consider is

dv/dt immunity. An important metric fordv/dt immunity is the Miller ratio, which isan indicator of how susceptible gates areto turning back on at high dv/dt. For theEPC8000 series, the Miller ratio (QGD/QGS1)at half rated voltage has been reduced to

Figure 2: Optimum high frequency loop layout (left) and eGaN FET package showing pin-out (right)

Figure 3: Gate charge diagrams, showing relative size of an EPC8004 device and existing EPC2014 device (left) and the EPC8004 device’s inherent dv/dtimmunity resulting from miller charge ratio (QGD/QGS1 < 1) (right)


30 POWER GaN www.epc-co.com


below 0.4, well below the theoreticalrequirement of one. The EPC8004 chargediagram, showing the QGS1 and QGD

intervals are shown on the right in Figure3. It is important to note that the Millerratio should remain below one, even up tofull rated voltage, if dv/dt induced turn-onis to be avoided.

New ApplicationsGaN technology is enabling entirely newapplications. In this article, we exploreGaN penetration in four of these newapplications, envelope tracking, wirelesspower transfer, LiDAR, and satellites. Wealso discuss GaN’s penetration in theoriginal target market, DC/DC conversion.The overall conclusion is that GaN iscreating markets that are as large as themarkets where they are displacing theirSilicon ancestors.Envelope Tracking: The concept ofenvelope tracking for radio frequency

amplifiers is not new. But the ever-increasing need for better base stationefficiency and output power, as well asthe need for improving RF poweramplifier efficiency, is driving intenseresearch and development in envelopetracking. RF power amplifiers are used totransmit all of our voice and data throughsatellites, base stations, and cell phones.Conventional RF power amplifiers operateat a fixed power level deliveringmaximum power whether or not thetransmitter needs it. When envelopetracking is deployed in a RF poweramplifier, the amplifier does not operateat a fixed power level, but precisely fitsthe power delivered to the amplifier’ssignal modulation needs. This isillustrated in Figure 4. Figure 5 shows aprototype board for envelope trackingapplications. For many years designers have tried to

make envelope tracking work using

expensive LDMOS transistors withoutgeneral success. However, the powermodulation required is enabled byenhancement-mode GaN transistors thatcan operate at the high voltages andswitching speeds needed for efficientenvelope tracking, which are just beyondthe reach of Silicon. RF power amplifiers for 4G LTE

technology have higher powerrequirements than previous generationsand are the biggest beneficiary ofenvelope tracking. Today 4G LTEtechnology is just nine percent of theglobal wireless platform, but willeventually supersede earlier 3G networksin the world of data transmission.Envelope tracking can double the energyefficiency of RF power amplifiers for the4G network with even greater gainsprobable for 5G.Wireless Power: Wireless powerapplications are gaining popularity inmany commodity products such asmobile phone chargers. Most of thewireless power solutions to date havefocused on tight coupling with inductioncoil solutions operating at frequenciesaround 200 kHz. This is the Qi standardand its major drawbacks are conversionefficiency and its requirement for exactplacement of the devices so that thetransmit and receive coils are aligned.Industry leaders including Qualcomm,

Intel, Broadcom, Samsung, Delphi, andWitricity, have established a consortium(A4WP) for the development andcommercialization of a recently selectedhigh-frequency standard (6.78 MHz) forwireless power transmission (HighlyResonant Power Transfer). The fastswitching capability of GaN transistors isideal for highly resonant power transferapplications, particularly when highABOVE Figure 4: Schematic of fixed and envelope tracking power profile in a RF Power amplifier

LEFT Figure 5:Prototype board forenvelope trackingapplications


www.epc-co.com POWER GaN 31


transfer efficiency and robust foreignobject detection is desired.

Initial applications for wireless powertransfer include cell phones, gamecontrollers, laptop computers, tablets, andeven electric vehicles that re-charge withoutbeing plugged in or having actual physicalcontact, merely proximity within a specifiedrange is all that is required. The globalwirelesses power transfer market CAGR isestimated at 55.5 %, and is forecasted tobe $15.1 billion by 2020. Demand forautomotive wireless charging alone isexpected to triple in the next eight years.LiDAR: Light Detection and Ranging usespulsed lasers to rapidly create a threedimensional image or map of asurrounding area. One of the earliestadopters of this technology is the GoogleMaps “driverless” cars. Today’senhancement-mode GaN transistors’higher frequency capability results inLiDAR systems with superior spacialresolution, faster response time, andgreater accuracy. These devicecharacteristics enable new and broader

applications such as real-time motiondetection for video gaming, computersthat respond to hand gestures asopposed to touch screens, and fullyautonomous vehicles. Rad Hard: Power converters used inharsh environments, such as space, high-altitude flight, or high-reliability militaryapplications must be resistant to damageor malfunctions caused by radiation. Mostelectronic components require specializeddesign or manufacturing processes toreduce their susceptibility to radiationdamage. For this reason, radiation-hardened devices tend to lag behind themost recent technology developments.Silicon-based power MOSFETs are noexception, and enhancement-mode GaNtransistors have been shown to perform40 times better electrically while beingable to withstand 10 times the radiation.In addition, since commercial grade GaNpower transistors are intrinsicallyradiation-hardened, they open the door tomajor cost savings in communicationsand research satellites. It is anticipated

that the overall $ 200 billion global spacemarket in 2023 will drive a greater than$100 million Rad Hard transistor marketthat will be dominated by GaN transistors.Datacom DC/DC: The hunger for moreefficiency continues to be a driving factorin most electronics – especially inapplications such as server farms andcentralized telecommunications centers.When compared with MOSFETs, GaNtransistors are significantly more efficient.The lower power losses translate intoproducts with higher output, improvedpower density, and increased efficiency.This translates into lower energyconsumption and reduced electric bills.

More to ComeWe expect GaN devices to re-enact thefamous Moore’s Law in the coming years,expanding beyond discrete transistors intoa variety of integrated circuits with highperformance, low cost, and very highvalue. This drives a “virtuous cycle” whereeach subsequent generation hasincreasingly higher performance andlower cost, thus enabling even more new,unforeseen applications.

GaN is facing a period of very rapidgrowth. This growth is coming from boththe replacement of lower performing(and soon to be higher relative cost)Silicon devices and from emergingapplications that are enabled by GaN’sperformance. Figure 6 shows EPC’sforecasted 2018 revenue breakout for itseGaN FET product line. Emergingapplications, LiDAR, envelope tracking,and wireless power transfer, represent48% of these projected revenues –applications that are in their infancy today,but are exploding on the market.

Literature‘Multi Megahertz Buck Converters

using eGaN® FETs for Envelope Tracking’Johan Strydom and David Reusch,Efficient Power Conversion Corporation(EPC), PP44 PCIM Europe 2014

Figure 6: EPC’s projected revenue by application in 2018


Power Electronics Europe subscribe today at:

www.power-mag.com


32 PRODUCT UPDATE


The new A6861 from Allegro MicroSystems Europe is a 3-phase N-channelpower MOSFET driver IC with built-in isolation designed to meetAutomotive Safety Integrity Level (ASIL) requirements in applications suchas electronic power steering, electric braking, and three-phase relay drivers.The new A?-SIL™ device is designed to replace mechanical relays anddiscrete driver circuits in safety-critical automotive applications where motorisolation is an essential requirement. The A6861 has three independentfloating gate drive outputs to maintain the power MOSFETs in the “on” or“off” state over the full supply range in the presence of high phase-voltageslew rates. With the addition of a few external components, it can alsoisolate the load when high load currents are present. An integrated chargepump regulator provides the above battery supply voltage necessary tomaintain the power MOSFETs in the “on” state continuously when thephase voltage is equal to the battery voltage. The charge pump willmaintain sufficient gate drive (above 7.5 V) for battery voltages down to4.5 V with 100 kΩ gate-source resistors. The three gate drives can beindependently controlled. In typical applications the MOSFETs will beswitched on within 8 s and will switch off within 1 s. An under-voltagemonitor checks that the pumped supply voltage is high enough to ensurethat the MOSFETs are maintained in a safe conducting state.

www.allegromicro.com

Automotive 3-phase MOSFET Driver IC

Polypropylene FilmCapacitors for SMPS

AVX has released the FM Series medium power film capacitors featuring non-inductively wound with dry, metallized polypropylene film dielectric andencapsulated in a flame retardant plastic case sealed with self-extinguishing,thermosetting epoxy resin and RoHS-compliant double metallized polyesterfilm electrodes in series construction. Rated for capacitance values spanning0.01 µF to 0.47 µF, voltages spanning 250 V to 2000 V, and operatingtemperatures spanning -40°C to +105°C, the new FM Series capacitors aredesigned for high frequency and high pulse rise-time circuits, high voltagepower supplies, switch mode power supplies (SMPS), power converters,snubbers, and electronic lighting ballasts, such as compact florescent lampsand LEDs. Unlike aluminum electrolytic capacitors, FM Series film capacitorsdo not have a catastrophic failure mode, they experience a parametric loss ofcapacitance of approximately 2 % from their initial value, eliminating the risk ofshort circuit and enabling continued functionality.

www.avx.com/docs/Catalogs/FM%20_4.pdf

Cornell Dubilier Electronics (CDE) has expanded its line of MLS Flatpackaluminum electrolytic capacitors to include a high vibration package, typeHVMLS and a high reliability burn-in option, type HRMLS. Applications aremainly for bulk storage, where relatively expensively wet tantalum capacitorshad previously been the only type suited. The MLS family of capacitors arepackaged in flat, stainless steel cans, one-half inch in height with a nearhermetic, precision welded construction. Their flat form factor allows them tobe fit into tight spots, easily cooled, and easily ganged for compact, high bulkstorage. The high vibration HVMLS version is further enhanced withruggedized internal terminations and compressed can edges that keep theinternal winding secure when tested up to 50 g of vibration.

www.cde.com

N-channel E-Modepower MOSFETAdvanced PowerElectronics Corp. (USA)has launched a newcost-effective N-channel enhancement-mode power MOSFEToffering a fast switchingperformance and ultralow on-resistance forlow voltage applicationssuch as DC/DCconverters and loadswitching. TheAP100T03GP-HF-3MOSFET comes in aTO-220 through-hole package which is popular for commercial and industrialsurface-mount applications requiring a small PCB footprint or an attachedheatsink. The new power MOSFET benefits from simple drive requirementsand offers a fast switching performance, low on-resistance of 2.1mΩ, a drain-source breakdown voltage of 30 V, and a continuous drain current of 215 A.The component is halogen-free and fully RoHS-compliant.

www.a-powerusa.com/docs/AP100T03GP-3.pdf

Flatpack CapacitorsHandle High Vibration

Product Pages_Layout 1 06/06/2014 11:03

WEBSITE LOCATOR 33


AC/DC Connverters

www.irf.comInternational Rectifier Co. (GB) LtdTel: +44 (0)1737 227200

Diodes

Discrete Semiconductors

Drivers ICS

EMC/EMIwww.microsemi.comMicrosemiTel: 001 541 382 8028

Fuses

Ferrites & Accessories

GTO/Triacs

Hall Current Sensors

IGBTs

DC/DC Connverters


www.power.ti.comTexas InstrumentsTel: +44 (0)1604 663399


www.neutronltd.co.ukNeutron LtdTel: +44 (0)1460 242200

Harmonic Filters

www.murata-europe.comMurata Electronics (UK) LtdTel: +44 (0)1252 811666

Direct Bonded Copper (DPC Substrates)

www.curamik.co.ukcuramik electronics GmbHTel: +49 9645 9222 0


www.psl-group.uk.comPSL Group UK Ltd.Tel +44 (0) 1582 676800

www.mark5.comMark 5 LtdTel: +44 (0)2392 618616

www.dgseals.comdgseals.comTel: 001 972 931 8463

www.microsemi.comMicrosemiTel: 001 541 382 8028


www.digikey.com/europeDigi-KeyTel: +31 (0)53 484 9584


www.dextermag.comDexter Magnetic Technologies, Inc.Tel: 001 847 956 1140



www.protocol-power.comProtocol Power ProductsTel: +44 (0)1582 477737

Busbars

www.auxel.comAuxel FTGTel: + 33 3 20 62 95 20

Capacitors

Certification



www.powersemiconductors.co.ukPower Semiconductors LtdTel: +44 (0)1727 811110

Connectors & Terminal Blocks

www.auxel.comAuxel FTGTel: +44 (0)7714 699967

www.productapprovals.co.ukProduct Approvals LtdTel: +44 (0)1588 620192

www.proton-electrotex.com/ Proton-Electrotex JSC/Tel: +7 4862 440642;

www.voltagemultipliers.com Voltage Multipliers, Inc.Tel: 001 559 651 1402


Arbitrary 4-Quadrant PowerSources

www.rohrer-muenchen.deRohrer GmbH Tel.: +49 (0)89 8970120

Website Locator_p41-42 Website Locator 06/06/2014 12:16

34 WEBSITE LOCATOR


Power Modules

Power Protection Products

Power Semiconductors

Power Substrates

Resistors & Potentiometers

RF & Microwave TestEquipment.

Simulation Software

ThyristorsSmartpower Devices

Voltage References

Power ICs

Power Amplifiers

Switches & Relays

Switched Mode PowerSupplies

Switched Mode PowerSupplies

Thermal Management &Heatsinks


www.rubadue.comRubadue Wire Co., Inc.Tel. 001 970-351-6100







www.fujielectric-europe.comFuji Electric Europe GmbHTel: +49 (0)69-66902920



www.ar-europe.ieAR EuropeTel: 353-61-504300



www.universal-science.comUniversal Science LtdTel: +44 (0)1908 222211

www.power.ti.comTexas InstrummentsTel: +44 (0)1604 663399


www.dau-at.comDau GmbH & Co KGTel: +43 3143 23510

www.power.ti.comTexas InstrummentsTel: +44 (0)1604 663399




www.isabellenhuette.deIsabellenhütte Heusler GmbH KGTel: +49/(27 71) 9 34 2 82

ADVERTISERS INDEX

Mosfets

Magnetic Materials/Products

Line Simulation

Optoelectronic Devices


Packaging & Packaging Materials



www.neutronltd.co.ukNeutron LtdTel: +44 (0)1460 242200



www.biaspower.comBias Power, LLCTel: 001 847 215 2427

www.digikey.com/europeDigi-Key Tel: +31 (0)53 484 9584


www.digikey.com/europeDigi-Key Tel: +31 (0)53 484 9584






www.abl-heatsinks.co.ukABL Components LtdTel: +44 (0) 121 789 8686

www.hero-power.com Rohrer GmbH Tel.: +49 (0)89 8970120

www.rohrer-muenchen.deRohrer GmbHTel.: +49 (0)89 8970120


Advanced Power Electronics 11

Cornell Dubilier 15

DFA Media 17 & 25

Drives & Controls 2016 19

Fuji Electric IFC

HKR 25

ICW 5

International Rectifier OBC

LpS 2014 IBC

LEM 9

Microchip 13

Power Electronic Measurements 11

Semikron 4

The Bergquist Company 23

Toshiba Electronics 7


Website Locator_p41-42 Website Locator 06/06/2014 12:17

35_PEE_0414_Layout 06/06/2014 09:42 Page 1

StrongIRFET™ Rugged,Reliable MOSFETs

Specifications Features:• Ultra low RDS(on)

• High current capability

• Industrial qualified

• Broad portfolio offering

Applications:• DC Motors

• Inverters

• UPS

• Solar Inverter

• ORing or Hotswap

• Battery Packs

PackageBVDSS

(V)

ID@25°C

(A)

RDS(on) max@Vgs = 10V

(m )

Qg@Vgs = 10V

(nC)Part Number

PQFN 5x6

25 100 0.95 56 IRFH8201TRPbF

25 100 1.05 52 IRFH8202TRPbF

30 100 1.1 58 IRFH8303TRPbF

30 100 1.3 50 IRFH8307TRPbF

40 100 1.4 134 IRFH7004TRPbF

40 85 2.4 92 IRFH7440TRPbF

40 85 3.3 65 IRFH7446TRPbF

DirectFET Med.Can

30 192 1.3 51 IRF8301MTRPbF

40 90 1.4 141 IRF7946TRPbF

60 114 3.6 120 IRF7580MTRPBF

D2-Pak

40 195 1.8 150 IRFS7437TRLPbF

40 120 2.8 90 IRFS7440TRLPbF

60 120 5.34 86 IRFS7540TRLPbF

D2-Pak 7pin40 195 1.5 150 IRFS7437TRL7PP

60 240 1.4 236 IRFS7530-7PP

D-Pak40 90 2.5 89 IRFR7440TRPbF

60 90 4 86 IRFR7540TRPbF

TO-220AB

40 195 1.3 300 IRFB7430PbF

40 195 1.6 216 IRFB7434PbF

40 195 2 150 IRFB7437PbF

40 120 2.5 90 IRFB7440PbF

40 118 3.3 62 IRFB7446PbF

60 195 2.0 274 IRFB7530PbF

TO-247 40 195 1.3 300 IRFP7430PbF

For more information call +49 (0) 6102 884 311or visit us at www.irf.com THE POWER MANAGEMENT LEADER

36_PEE_0414_Layout 06/06/2014 09:41 Page 1

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