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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). All rights reserved or Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding,

Kind regards,

Team Nexperia

1. Product profile

1.1 General descriptionNPN/PNP Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.

1.2 Features and benefits

1.3 Applications Low current peripheral driver Control of IC inputs Replaces general-purpose transistors in digital applications

1.4 Quick reference data

PEMD10; PUMD10NPN/PNP resistor-equipped transistors;R1 = 2.2 k, R2 = 47 kRev. 6 4 January 2012 Product data sheet

Table 1. Product overviewType number Package PNP/PNP

complementNPN/NPN complement

Package configurationNXP JEITA

PEMD10 SOT666 - PEMB10 PEMH10 ultra small and flat lead

PUMD10 SOT363 SC-88 PUMB10 PUMH10 very small

100 mA output current capability Reduces component count Built-in bias resistors Reduces pick and place costs Simplifies circuit design AEC-Q101 qualified

Table 2. Quick reference dataSymbol Parameter Conditions Min Typ Max UnitPer transistor; for the PNP transistor (TR2) with negative polarityVCEO collector-emitter voltage open base - - 50 V

IO output current - - 100 mA

R1 bias resistor 1 (input) 1.54 2.20 2.86 k

R2/R1 bias resistor ratio 17 21 26

NXP Semiconductors PEMD10; PUMD10NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

2. Pinning information

3. Ordering information

4. Marking

[1] * = placeholder for manufacturing site code.

Table 3. PinningPin Description Simplified outline Graphic symbol1 GND (emitter) TR1

2 input (base) TR1

3 output (collector) TR2

4 GND (emitter) TR2

5 input (base) TR2

6 output (collector) TR1 001aab555

6 45

1 32

6 5 4

1 2 3

R2

TR1TR2

R1

R2 R1

006aaa143

Table 4. Ordering informationType number Package

Name Description VersionPEMD10 - plastic surface-mounted package; 6 leads SOT666

PUMD10 SC-88 plastic surface-mounted package; 6 leads SOT363

Table 5. Marking codesType number Marking code[1]

PEMD10 D1

PUMD10 D*0

PEMD10_PUMD10 All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 6 4 January 2012 2 of 16

NXP Semiconductors PEMD10; PUMD10NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

Table 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max UnitPer transistor; for the PNP transistor (TR2) with negative polarityVCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 50 V

VEBO emitter-base voltage open collector - 5 V

VI input voltage TR1

positive - +12 V

negative - 5 V

input voltage TR2

positive - +5 V

negative - 12 V

IO output current - 100 mA

ICM peak collector current - 100 mA

Ptot total power dissipation Tamb 25 C [1]

PEMD10 (SOT666) [2] - 200 mW

PUMD10 (SOT363) - 200 mW

Per devicePtot total power dissipation Tamb 25 C [1]

PEMD10 (SOT666) [2] - 300 mW

PUMD10 (SOT363) - 300 mW

Tj junction temperature - 150 C

Tamb ambient temperature 65 +150 C

Tstg storage temperature 65 +150 C

PEMD10_PUMD10 All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 6 4 January 2012 3 of 16

NXP Semiconductors PEMD10; PUMD10NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

SOT363 and SOT666; FR4 PCB, standard footprint

Fig 1. Per device: Power derating curve

Tamb (C)-75 17512525 75-25

006aac749

200

100

300

400

Ptot(mW)

0

Table 7. Thermal characteristicsSymbol Parameter Conditions Min Typ Max UnitPer transistorRth(j-a) thermal resistance from

junction to ambientin free air [1]

PEMD10 (SOT666) [2] - - 625 K/W

PUMD10 (SOT363) - - 625 K/W

Per deviceRth(j-a) thermal resistance from

junction to ambientin free air [1]

PEMD10 (SOT666) [2] - - 417 K/W

PUMD10 (SOT363) - - 417 K/W

PEMD10_PUMD10 All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 6 4 January 2012 4 of 16

NXP Semiconductors PEMD10; PUMD10NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for PEMD10 (SOT666); typical values

FR4 PCB, standard footprint

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for PUMD10 (SOT363); typical values

006aac751

10-5 1010-210-4 10210-1tp (s)

10-3 1031

102

10

103

Zth(j-a)(K/W)

1

duty cycle = 1

0.750.5

0.330.2

0.1

0.05

0.02 0.01

0

006aac750

10-5 1010-210-4 10210-1tp (s)

10-3 1031

102

10

103

Zth(j-a)(K/W)

1

duty cycle = 1

0.750.5

0.33

0.2

0.10.05

0.02 0.01

0

PEMD10_PUMD10 All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 6 4 January 2012 5 of 16

NXP Semiconductors PEMD10; PUMD10NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

7. Characteristics

[1] Characteristics of built-in transistor.

Table 8. CharacteristicsTamb = 25 C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max UnitPer transistor; for the PNP transistor (TR2) with negative polarityICBO collector-base

cut-off currentVCB = 50 V; IE = 0 A - - 100 nA

ICEO collector-emitter cut-off current

VCE = 30 V; IB = 0 A - - 100 nA

VCE = 30 V; IB = 0 A; Tj = 150 C

- - 5 A

IEBO emitter-base cut-off current

VEB = 5 V; IC = 0 A - - 180 A

hFE DC current gain VCE = 5 V; IC = 10 mA 100 - -

VCEsat collector-emitter saturation voltage

IC = 5 mA; IB = 0.25 mA - - 100 mV

VI(off) off-state input voltage

VCE = 5 V; IC = 100 A - 0.6 0.5 V

VI(on) on-state input voltage

VCE = 0.3 V; IC = 5 mA 1.1 0.75 - V

R1 bias resistor 1 (input) 1.54 2.20 2.86 k

R2/R1 bias resistor ratio 17 21 26

Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz

TR1 (NPN) - - 2.5 pF

TR2 (PNP) - - 3 pF

fT transition frequency VCB = 5 V; IC = 10 mA; f = 100 MHz

[1]

TR1 (NPN) - 230 - MHz

TR2 (PNP) - 180 - MHz

PEMD10_PUMD10 All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved.

Product data sheet Rev. 6 4 January 2012 6 of 16

NXP Semiconductors PEMD10; PUMD10NPN/PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k

VCE = 5 V(1) Tamb = 100 C(2) Tamb = 25 C(3) Tamb = 40 C

IC/IB = 20(1) Tamb = 100 C(2) Tamb = 25 C(3) Tamb = 40 C

Fig 4. TR1 (NPN): DC current gain as a function of collector current; typical values

Fig 5. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values

VCE = 0.3 V(1) Tamb = 40 C(2) Tamb = 25 C(3) Tamb = 100 C

VCE = 5 V(1) Tamb = 40 C(2) Tamb = 25 C(3) Tamb = 100 C

Fig 6. TR1 (NPN): On-state input voltage as a function of collector current; typical values

Fig 7. TR1 (NPN): Off-state input voltage as a function of collector current; typical values

IC (mA)10-1 102101

006aac805

102

10

103

hFE

1

(1)

(2)

(3)

006aac810

IC (mA)10-1 102101

10-1

1

VCEsat(V)

10-

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