Yeshaiahu (Shaya) Fainman Department of ECE, Jacobs School of Engineering

University of California, San Diego La Jolla, California 92093-0407

Tel: (858) 534-8909; Fax: (858) 534-1225; E-mail: fainman@ece.ucsd.edu

http://emerald.ucsd.edu

Nanophotonics Technology and Applications

Lyncean Group, September 6, 2013

Outline/Contents

• Introduction: Technology Drive

• Nanophotonics Process

• Monolithic SOI Integration Platform

• Heterogeneous Integration with SOI

• Optofluidic nano-plasmonics

• Testing for Manufacturability

• Conclusions

FUNDAMENTALS

CHIP-SCALE SYSTEM TECHNOLOGY

Introduction: Technology Drive • Optical Interconnects for on-chip Multi-Core Computing

• Optics in Data Centers

Challanges: • Difficult to scale • Energy inefficient • Expensive • Cabeling complexity

CENTER FOR INTEGRATED ACCESS NETWORKS

• Nanostructured composites compatible with Si CMOS technology enables miniaturization and integration of information systems on a chip • Nanophotonics advances scalable and energy efficient computing platforms for stationary and mobile applications • Nanophotonics is being developed in collaboration with industry (SUN/Oracle)

Optofluidic information systems: “Making sense of sensing”

Future information systems will integrate electrical, optical, fluidic, magnetic, mechanical, acoustic, chemical, and biological signals and processes on a chip

VCSEL+Near-field polarizer: polarization control, mode stabilization, and heat management

Composite nonlinear, E-O, and artificial dielectric materials control and enhance near-field coupling

Near-field coupling between pixels in Form-birefringent CGH (FBCGH) FBCGH provides dual-

functionality for focusing and beam steering

Wavelength ( µ m) 1.3 1.5 1.7 1.9 2.1 2.3 2.5

Ref

lect

ivity

0.0

0.2

0.4

0.6

0.8

1.0 TE TM

Information I/O through surface wave, guided wave,and optical fiber from near-field edge and surface coupling

Near-field E-O modulator controls optical properties and near-field micro-cavity enhances the effect

+V -V

Angle (degree) 20 30 40

TM E

ffici

ency

0.0

0.2

0.4

0.6

0.8

1.0

Near-field E-O Modulator + micro-cavity

FBCGH VCSEL

Near-field E-O coupler

Micro polarizer

Fiber tip Grating coupler

Thickness ( µ m) 0.60 0.65 0.70 0.75 0.80

TM 0

th o

rder

effi

cien

cy

0.2

0.4

0.6

0.8

1.0

RCWA Transparency Theory

Near-field coupling

Plasmonics

Applications: Optical interconnects for chip communications, optical feedback + gain for signal processing , biomedical sensing OPTOFLUIDICS

What are the opportunities for nanophotonics?

• We can use lithography to “write” optical functional materials and devices, and exploit near field optical phenomena

• Subwavelength features act as a metamaterial with optical properties controlled by the density and geometry of the constituent materials

The ultimate challenge Field localization on nanoscale: Create nanophotonic systems to increase field interaction (cross-section) with confined material • Silicon Photonics • Nanoresonators/Nanolasers • Plasmonics

Goals: –Investigate near-field optical and quantum phenomena in nanostructures and resonators –Develop modeling and simulation tools for resonant and nonlinear interactions in QE

materials –Optimize design of multifunctional, integrated nanophotonic devices and sub-systems

utilizing near-field effects –Develop near-field manipulation and characterization tools and tools for manipulation, control

and validation (amplitude, phase, time, etc.) of near-field devices and their interference –Fabricate and characterize example devices and integrated sub-systems for proof-of-concept

and validation of modeling/optimization, fabrication and characterization tools

Establishing Nanophotonics Process

Near-field Optical Systems Science

Fabrication Characterization

Design and simulation

Feedback from characterization of fabricated systems enable improvement of design/fabrication process

Performance analysis enables improvement of system design and verification of modeling simulation tools

Reliable modeling tools permit easy system design optimization

• Monolithic Si photonics – CMOS • Heterogeneous III-V on SOI

• Nanophotonic probe station • Near field system testing

• Multidomain Optimization • Optical Spice

Design and Modeling Tools: UCSD-RCWA, R-SOFT, COMSOL

Polarization-selective resonant ring cavity time delay

TE modes: Resonant & delayed by ring cavity

TM modes: Not resonant with ring cavity

Multicavity resonant delay line

Pol-selective mirror TM-Transmitted

TE-Reflected

Resonant phase modulator

Index Modulation (∆n)

-0.0010 -0.0005 0.0000 0.0005 0.0010

Pha

se C

hang

e (R

ad)

-4

-3

-2

-1

0

1

2

3

4

3-layer front mirror5-layer front mirror7-layer front mirror9-layer front mirror11-layer front mirror

Form-birefringent modes

I. Richter, P.-C. Sun, F. Xu and Y. Fainman “Design of form birefringent microstructures,” Appl. Opt. 34, 2421–2429 (1995).

SiO2

Substrate

Fabrication of Nanophotonic Devices

∆WS = 50 nm WS = 500 nm

H = 250 nm

DBR single mode high-Q resonators

H.-C. Kim, K. Ikeda, and Y. Fainman, JLT and Opt. Lett., 2007

Microring resonator Photonic crystal device

High resolution lithography enables construction of various nanophotonic components and devices

140nm

1µm (320nm mod.)

Si

Si

Rib waveguide for larger size

cavity

New Calit2 Photonics Nanofabrication and Chip-scale Testing Facilities

Calit2 Building: Opened Nov 2005

New Nanofabrication Facility Nano3

State of the Art E-beam from December 2012

( , ) cos( ( ) ), ) ,(R R S RS SI I x yI I I x xt yy φ φω= + + ∆ −+

Heterodyne NSOM

Performance: • Telecom wavelength • Amplitude and phase • Linear & nonlinear effects • Measures: modal content, group delay, losses, index • Time resolution: ~1 fsec • Coherent detection with heterodyne gain Er/Es ~ 104

Near-field amplitude Near-field phase Output amplitude x

y

Topography

Simultaneously generated images of an SOI waveguide:

Outline/Contents

• Introduction: Technology Drive

• Nanophotonics Process

• Monolithic SOI Integration Platform

• Heterogeneous Integration with SOI

• Optofluidic nano-plasmonics

• Testing for Manufacturability

• Conclusions

Λ << λ

Λ a

TMTE

εIIIεI

ε F (1 )TE = εIII + − F ε I

εTM = ε I εIII

Fε I + (1 − F )εIII

Duty cycle F=( Λ-a)/ Λ

TMTE

ε F (1 )TE = εIII + − F εI

εTM = ε I ε III

Fε I + (1 − F )ε III

∆Φ

=ΦTE

-ΦTM

[ra

d]

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 0.2 0.4 0.6 0.8 1

Grating thickness d/λ

Λ/λ=0.01�Λ/λ=0.1�Λ/λ=0.3�Λ/λ=0.4

Some properties of form birefringence

∆n=0.2 crystal

Stratified periodic structure Negative uniaxial crystal

Duty cycle

0.00.51.01.52.02.53.03.54.0

0.0 0.2 0.4 0.6 0.8 1.0

Λ/λ=0.1� Λ/λ=0.2� Λ/λ=0.3 ∆

Φ=Φ

TE-Φ

TM [

rad]

Dielectric Metamaterials: Form Birefringence

I. Richter, P.-C. Sun, F. Xu and Y. Fainman “Design of form birefringent microstructures,” Appl. Opt. 34, 2421–2429 (1995).

Resonant Photonic Structutes

In Out

Horizontal grating on top

Vertical grating on sidewalls

Two step process (waveguide grating) or (grating waveguide)

Motivation: Simple Fabrication of Si-Photonic Wires

One step process (all structures in one step)

SiO2

Si SiO2

Si substrate

Kim, Ikeda, and Fainman, JLT and Opt. Lett., 2007

Resonant Filter with Vertical Gratings

0

0.2

0.4

0.6

0.8

1

1530 1540 1550 1560 1570

26nm

140nm

1µm (320nm mod.)

Si Si

Rib waveguide for larger size

cavity

250nm

500nm (50nm modulation)

Channel waveguide for smaller size

Si

SiO2

cavity

Q=2600

Transmittance

19nm

6Å

Modulated optically by 514nm laser with thermal nonlinearity

0mW 3.3mW 6.6mW 10mW

1554.8nm

λ=1554.8nm

Modulated output

High quality resonator is obtained without any other structure than the waveguide (small footprint), with one step lithographic process (easy fabrication).

Silicon-based functional optical devices, such as modulator, filter and detector, are desirable for on-chip photonic interconnections. The vertical grating structure enables configuring functional devices with small dimensions and CMOS compatible fabrication. Kim, Ikeda, and Fainman, JLT and Opt. Lett., 2007

Top View Bragg conditions

Backward coupling in WG1 (Port1 input)

Backward coupling in WG2 (Port2 input)

Cross coupling between WG1 and WG2

Design: (1) Satisfy 3 Bragg conditions for desired wavelengths changing (W1, W2, Λ) (2) Determine coupling coefficients for desired bandwidths by changing (∆W1, ∆W2, G) (3) Determine length (L) of the structure to obtain the necessary extinction ratios

Λ

∆W1 W1

L

∆W2 W2

β1

β2

1

2

3

4

G

1 122 ( ) πβ λ =Λ1 1 1 1( ) ( )β λ β β λΛ− = −

2 222 ( ) πβ λ =Λ

1 22( ) ( )c cπβ λ β λ+ =Λ

2 2 2 2( ) ( )β λ β β λΛ− = −

1 2( ) ( )c cβ λ β β λΛ− = −

Wavelength Selective Coupler with Resonant Photonic Wires on Silicon Chip

Photonic wire: add-drop filter for WDM

Port3 Port4

WG1

WG2

550nm

430nm 250nm

SEM micrograph

Port2

Port1

Port4 80µm

Port3

K. Ikeda, M. Nezhad and Y. Fainman, "Wavelength Selective Coupler with Vertical Gratings on Silicon Chip," APPLIED PHYSICS LETTERS Volume: 92 Issue: 20 Article Number: 201111: MAY 19 2008

Microscope image

Si Substrate

H

W2

Si

W1

Si SiO2

1 by 4 Wavelength Division Multiplexer Design and Characterization

z = L/2z

z = -L/2

ΔW2ΔW1

G2

W1

W2

ΛB {

Port 4 Port 5

W4

W3

W5

G3

G4 G5

Transmission Port

1550 1560 1570 1580 1590 1600

-25

-20

-15

-10

-5

0

Wavelength (nm)

Tran

smis

sion

(dB

)

TransmissionPortPort 5Port 4Port 3Port 2

D. T. H. Tan, K. Ikeda, S. Zamek, A. Mizrahi, M.P. Nezhad, A.V. Krishnamoorthy, K. Raj, J.E. Cunningham, X. Zheng, I. Shubin, Y. Luo and Y. Fainman, "Wide bandwidth, low loss 1 by 4 wavelength division multiplexer on silicon for optical interconnects," Opt. Express. 19, 2401-2409 (2011).

Zoom in Port #4

• 3dB bandwidth of 3nm per channel • 6 nm channel separation • < 0.8dB ripple in the passband of each channel • Insertion loss of 1dB • 16dB inter-channel crosstalk suppression

Measured performance:

Importance of Pulse Compression • Localization in time domain will benefit applications such as imaging,

spectroscopy and communicationsOTDM • Compression is often used as alternative to mode locking to derive the

necessary short pulses • High compression factors and CMOS compatibility are important

H. C. H. Mulvad, M. Galili, L. K. Oxenløwe, H. Hu, A. T. Clausen, J. B. Jensen, C. Peucheret, and P. Jeppesen, “Demonstration of 5.1 Tbit/s data capacity on a single-wavelength channel,” Opt. Express 18, 1438–1443 (2010).

Pulse Compression Approaches:

Nonlinear, dispersive medium

Solitonic compression Compression with Dispersive Element

Self Phase Modulation

L. F. Mollenauer, R. H. Stolen, and J. P. Gordon, “Experimental observation of picosecond pulse narrowing and solitons in optical fibers,” Phys. Rev. Lett. 45, 1095 (1980).

W. J. Tomlinson, R. H. Stolen, and C. V. Shank, “Compression of optical pulses chirped by self-phase modulation in fibers”, J. Opt. Soc. Am. B 1 , 139 (1984)

Input, spectrally narrow,

temporally wide

Spectrally and temporally

wide

Output, spectrally wide and

temporally narrow

Dispersive Grating

a

Input, spectrally narrow,

temporally wide

Spectrally and temporally

wide

Output, spectrally wide and

temporally narrow

Dispersive Grating

a

b

c

b

c

Nanophotonic circuit: Ultrafast Compression of Optical Pulses on a Silicon Chip

Scanning electron micrograph of dispersive grating before deposition of SiO2 overcladding

• Input pulses are spectrally broadened due to self phase modulation (via the Kerr nonlinearity in the highly confined silicon nanowire waveguide) • The pulse is compressed by the dispersive grating leading to spectrally wide and temporally narrow output pulses.

c

c

Calculated quasi-TE mode profile for silicon nanowire waveguide used for self phase modulation

-10-5

05

10

0 48121620

0

0.5

1

P k P (W)

Time (ps)

Aut

ocor

rela

tion

Input Peak Power (W)

-10-5

05

10

0 48121620

0

0.5

1

P k P (W)

Time (ps)

Aut

ocor

rela

tion

Input Peak Power (W)

D.T.H. Tan , P. C. Sun and Y. Fainman, Monolithic nonlinear pulse compressor on a silicon chip, Nature Communications, 1, 1113, 2010

Outline/Contents

• Introduction: Technology Drive

• Nanophotonics Process

• Monolithic SOI Integration Platform

• Heterogeneous Integration with SOI

• Optofluidic nano-plasmonics

• Testing for Manufacturability

• Conclusions

Detector

Electrical I/O Block B

λ3

Detector

Detector

λ2

Electrical I/O

Modulator

Modulator

Modulator

λ2 λ3

Block A

Source λ3

Source λ1

Source λ2

Optical interconnects and networking on a Si chip

Fast Modulators

Liu, Nature, 2004

Xu, Nature, 2005

Add/Drop Filters

Lee, Opt. Lett. 2006

Ikeda, APL 2008

Nezhad, Nat. Phot. 2010 Hill, Nature Photon. 2009

Miniature Optical Sources

Huang, Nature Photon. 2007

Waveguides

Integrated networking on a chip

Small, No EM Interference, Efficient

Passive (Si)

Active (Si, III-V)

Challenge: create a low-loss metal coated resonator enabling lasing (threshold gain < 200 cm-1) with the following features:

• (1) room temperature operation • (2) subwavelength size in all 3-D and • (3) isolation from near field interactions

Optimal condition does not correspond to Rgain=Rout

•A. Mizrahi, V. Lomakin, B. A. Slutsky, M. P. Nezhad, L. Feng, and Y. Fainman, "Low Threshold Gain Metal Coated Laser Nanoresonators", Opt. Lett., vol. 33, no. 11, pp. 1261-1263, June 2008 •Our later designs replace the substrate side with air, but gain threshold requirement does not change significantly

Our Approach: Use Dielectric Shield

Fabrication results

Array of etched nanolasers

After RIE and BOE After PECVD of SiO2

After Al sputtering After HCl etch (Note: different size laser is

shown here)

Nanolaser aperture

M. P. Nezhad, A. Simic, O. Bondarenko, B. A. Slutsky, A. Mizrahi, L. Feng, V. Lomakin, and Y. Fainman, Nature Photonics, (2010).

Lasing conditions: Pump at 1064nm pulsed PW=12ns, Rep rate 300KHz

Room-Temperature Lasing

Lasing Wavelength:1430nm Lasing Threshold: 700µW/µm2 Linewidth: 0.9nm

M. P. Nezhad, A. Simic, O. Bondarenko, B. A. Slutsky, A. Mizrahi, L. Feng, V. Lomakin, and Y. Fainman, Nature Photonics (2010).

Core size: 420nm/490nm Diameter=0.75 λ Height=0.9 λ

Challenge - create a laser that operates without threshold • efficient conversion of emited light into lasing mode • subwavelength size in all 3-D • isolation from near field interactions • thresholdless operation

Nanoscale coaxial lasers

M. Khajavikhan, A. Simic, M. Kats, J. H. Lee, B. Slutsky, A. Mizrahi, V. Lomakin, and Y. Fainman, “Thresholdless Nanoscale Coaxial Lasers” Nature, 10840, February 2012

TEM-like scalable mode of coaxial resonator alleviates the threshold constrain

Electromagnetic Analysis

Structure A Rcore=225 nm

Δ=75 nm h1= 20 nm h2= 210 nm h3= 30 nm

Structure B Rcore=200 nm

Δ=100 nm h1= 20 nm h2= 210 nm h3= 30 nm

- nanoscale structure results in discrete sparse sets of mode in the spectral domain - spectral location of modes can be determined by tailoring the size, inner-outer radius- height of the plugs and gain region, etc. - the gain acts as a spectral filter for the modes - ultimately we can design a cavity that has only one confined mode in the gain bandwidth

Thresholdless Laser For the single mode nanoscale coaxial cavity β→1:

Spontaneous emission coupling into the continuous spectrum of the free space radiation modes is minimized in nanoscale coaxial cavities because: 1- the metallic cover protects the emitters in the gain region from coupling to radiation modes 2- the ultra-small aperture of nanocoax cavity blocks most of the radiation modes from penetrating into the cavity

spontaneous emission into the lasing mode

spontaneous emission into the continuous spectrum of the free space radiation modes → 0

spontaneous emission other cavity modes

spontaneous emission into the lasing mode

β=

→1

Light-light Measurement: Structure A T = 4 K Room-temperature

Spectrum Evolution

-At low pump power multimode nature of the cavity is reflected into the modified PL.

-Blue shift of the spectrum with power

Light-light curve

-The laser shows three regions of operation: PL-ASE-Lasing -Rate equation model predicts that almost 20 percent of the spontaneous emission couples to the lasing mode (β≈0.2)

-Because of higher temperature, the non radiative surface recombination dominates at lower pump levels and Auger non-radiative recombination dominates at higher pump levels

PL

Lasing

ASE

rate equation model

- Below threshold the linewidth is proportional to the inverse of power as predicted by Schawlow-Townes formula

- Above threshold the linewidth depends on many parameters including the gain-index coupling (α) and spontaneous emission coupling factor (β)

Linewidth

Schawlow-Townes

Light-light Measurement: Structure A T = 4 K T= 4.5 K

Spectrum Evolution

-At low pump power multimode nature of the cavity is reflected into the modified PL

-Blue shift of the spectrum with power

Light-light curve

-The laser shows three regions of operation: PL-ASE-Lasing -Rate equation model predicts that almost 20 percent of the spontaneous emission couples to the lasing mode (β≈0.2)

PL

Lasing

ASE

rate equation model

- Below threshold the linewidth is proportional to the inverse of power as predicted by Schawlow-Townes formula

- Above threshold the linewidth depends on many parameters including the gain-index coupling (α) and spontaneous emission coupling factor (β)

Linewidth Schawlow-Townes

Light-light Measurement: Structure B T = 4 K T = 4.5 K

Spectrum Evolution

- Single narrow Lorentzian emission is obtained over the entire five-orders-of-magnitude range of pump power - the linewidth at lowest pump powers agrees with the calculated Q of the TEM-like mode

-Blue shift of the spectrum with power

Light-light curve

- No distinguishable ASE kink - Rate equation model predicts that more than 95 percent of the spontaneous emission couples to the lasing mode (β≥0.95)

rate equation model

- No sub-threshold narrowing of linewidth with inverse power (Schawlow-Townes formula)

Linewidth

Outline/Contents

• Introduction: Technology Drive

• Nanophotonics Process

• Monolithic SOI Integration Platform

• Heterogeneous Integration with SOI

• Optofluidic nano-plasmonics

• Testing for Manufacturability

• Conclusions

Optofluidics (DARPA’s Opto Center)

Center for Optofluidic Integration

Main Challenges: - Create novel devices that are uniquely enabled by fluids - Dynamic adaptation of optical properties - Integration of optical and biochemical functionality 500 nm 50 µm 5 mm

E F G

Vision: Combine Optics and Microfluidics

Main Challenges: • Create novel devices uniquely enabled by fluids integrated with optics • Use microfluidics delivery of biomolecules, viruses and cells for optical interrogation • Create optical field localization devices to increase interaction cross-section by co-localizing it with biomolecules for sensing and imaging

- Plasmonic localization

Optofluidic Nanoplasmonics: Combine Nanoplasmonics and Microfluidics

Overview of activities

• SPP over a nanohole array – integration with microfluidics – universal biosensing

experiments • Plasmonic Focusing and Field

Localization – Diffractive Focusing of SPP – Plasmonic Photonic Crystal – Resonant Nano-Focusing-

Antenna (RNFA)

Al

Si

SPP

Incidence

Al Si

aD

h

xy

z

x

yz

SiAu

H-NSOM

SiO2

Au

Si

SiO2

TEz

Si

T. W. Ebbesen, et. al. Nature 391, 667 (1998)

3-D Metallodielectric Nanostructure for Enhanced SPR Sensing

0

0.2

0.4

0.6

0.8

1

Norm

aliz

ed In

tens

ity

400 nm hole diame250 nm hole diame

0

0.2

0.4

0.6

0.8

1

Norm

aliz

ed In

tens

ity

400 nm hole diame250 nm hole diame

0 50 100 150 200 250 300 350 400 4501537.2

1537.4

1537.6

1537.8

1538

1538.2

1538.4

1538.6

1538.8

1539

Time (min)

wav

elen

gth

(nm

)

PBS@11

sample100308-3 1ug/ml (16nM) Strept 0.54nm

PBS

1ug/ml Strep@42

Fresh Strept@68

PBS@125

5ug/ml Strep@215

PBS@291

0 50 100 150 200 250 3001545

1545.2

1545.4

1545.6

1545.8

1546

1546.2

1546.4

1546.6

1546.8

154710-3-08sample4-Streptavidin of 8nM shift of 0.5nm

50 ug/mlBSA-Biotin

Wav

elen

gth

(nm

)

PBS

PBS@20min

0.5ug/ml Strepa@80min

PBS@168min

1ug/ml Strepta@203min

PBS@289min

Substrate__SiO2

ARC

Polymer Polymer

Au Au

Control signal shows linear attachment of streptavidin from 0.6nm for 16nM to 0.3nm for 8nM

• Resonant coupling to enhance localized SPP field • Enhanced sensitivity bio-sensing • Monitoring of surface hydrophilicity • Calibration and monitoring of binding affinity e.g. Biotinated-BSA and Streptavidin 2-D composite nanoresonant design and fabricated device

Narrowed linewidth of farfield intensity

0 20 40 60 80 100 1201532

1534

1536

1538

1540

1542

1544

Res

onan

t Wav

elen

gth

nm)

Time (min)

0

2

4

6

8

10

12

Adso

rptio

n Th

ickn

ess

(nm

)

Air

After Methanol RinseAfter

Methanol Rinse

Air(1 day later)

After Water Rinse

0 20 40 60 80 100 1201532

1534

1536

1538

1540

1542

1544

Res

onan

t Wav

elen

gth

nm)

Time (min)

0

2

4

6

8

10

12

Adso

rptio

n Th

ickn

ess

(nm

)

Air

After Methanol RinseAfter

Methanol Rinse

Air(1 day later)

After Water Rinse

Air

After Methanol RinseAfter

Methanol Rinse

Air(1 day later)

After Water Rinse

Monitoring of surface monolayer

Initial states: Signal channel immobilized BSA-biotin Control channel: Clear Au surface

Lead to 400pM detection limit with 30pm spectral resolution

Immobilization: 50ug/ml BSA-biotin Binding events: Streptavidin of 16nM, 8nM and 0.8nM (1, 0.5 and 0.05 ug/ml)

0 50 100 150 200

0

0.1

0.2

0.3

0.4

0.5

Time(min)

Wav

eleng

th sh

ift(nm

)10-0908-2-BioBSA-BSA--strept(0.05--0.5ug/ml

PBS

PBS

Strep- 0.05ug/ml

Strep- 0.5ug/ml

PBS

Signal channel: BSA-biotin Control channel: BSA Control signal allows to acount for environmental effects and nonspecific binding

Non-specific binding subtraction shows 0.8nM streptavidin detection

16nM

8nM

8nM

0.8nM

Chen,Pang, Kher, Fainman, APL 94, 073117, 2009

Nanopillar

Initial RIE etch to create nanopillar

Large Rim Opening

260-nm rim diameter nanocrescent (using standard sputtering setup)

Smaller Rim Opening

140-nm rim diameter nanotorch (using new sputtering setup)

Even Smaller Rim Opening

50-nm rim diameter nanocrescent (using new sputtering setup)

• Used Renishaw inVia Raman system with StreamlineTM Raman Imaging

• Measurement Process 1) SERS substrate is immersed in benzenethiol for

3 hours 2) Rinsed with ethanol 3) Raman imaging of sample to locate nanotorch 4) Maximize Raman signal by incrementally moving

substrate so laser beam is focused onto single nanotorch and perform point-measurement

SERS Measurements

SERS Measurement of Nanotorch

x5

~1.5 x 106 for the 260-nm opening for 1573 cm-1 mode ~8.2 x 106 for the 140-nm opening—6X times

neat BT

260-nm

140-nm

H. M. Chen et al (submitted)

Measurements of Reproducibility

Peak [cm-1] Mode Std. Dev.

1000 ν (C-C-C) 20.0%

1023 ν (C-H) 12.3%

1074 ν(C-C-C) and ν (C-S) 12.6%

1573 ν (C-C-C) 16.5%

< 20% deviation H. M. Chen et al (submitted)

ACKNOWLEDGEMENTS • Colleagues and postdocs: Vitaliy Lomakin (UCSD), Harry

Wieder (UCSD), C. Tu (UCSD), A. Krishnamoorthy (Sun/Oracle), Boris Slutsky (UCSD), M. Nezhad (UCSD), L. Pang (UCSD), U. Levy (HUJI), H. C. Kim, K. Ikeda, A. Mizrahi (UCSD), M. Khajavikhan (UCSD), J. H. Lee (UCSD)

• Students:D. Tan, L. Feng, O. Bondarenko, M. Abashin, A. Simak, M. Ayache, S. Zamek, K. Tetz, M. Chen

• Funding : NSF, DARPA, SPAWAR, ARO, Cymer Inc., and Oracle

• Bill Mitchell at the UCSB nanofabrication facility

• UCSD Nano3 Facility

Conclusions/Summary Material design flexibility (Choice of materials, composition, and geometry) Novel Functionality (Near-field phenomena, Field localization, Enhanced nonlinearities) Miniaturization, Integration and Packaging (Compatible with CMOS process) Multifunctionality and Dynamic Adaptation (Integrating polarization and spectral

dispersion, modulation, filtering, manipulation, detection, and generation of light) (1) Monolithic Si-photonic chip-scale integration: pulse compressor • Demonstration of self-phase modulation in Si • Demonstration of multiport dispersion compensation devices • Integration of discrete elements into a Si-photonic sub-system on a chip using

CMOS compatible SOI platform (2) Heterogeneous Integration • Demonstration of optimal composite 3D metal-dielectric-semiconductor

nanolasers with threshold gain allowing room temperature operation. • Demonstration of electrically pumped III-V nanolasers integrable with SOI • Demonstrated Thresholdless nanolasers (3) Optofluidic Plasmonics • Integration of microfluidics with Plasmonics • Plasmonic field localization for biosensing • Demo integrated biosensors (4) Near field testing for manufacturability: H-NSOM and CSTF • Demo H-NSOM operating with liquid cladding for testing photonic lightwave circuits

Nanophotonics technology for on-chip systems integration provides: